JP2013016567A - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device capable of extracting light generated from plural light emitting elements from one light emitting element.SOLUTION: A light emitting device comprises a substrate, an end face light emission type element provided on the substrate, and a light emitting diode element provided on the substrate so that it crosses a shaft almost vertical to a light emission end face while a starting point is in the light emission end face of the end face light emission type element. The end face light emission type element has a light emission region higher than an upper face of the light emitting diode element.

Description

  The present invention relates to a light emitting device including a plurality of light emitting elements.

  Conventionally, an invention has been proposed in which three light emitting elements of red, green, and blue are incorporated, and at least the red light emitting element of the three light emitting elements is a semiconductor laser element (see Patent Document 1).

JP 2005-64163 A

  However, the conventional invention has a problem that light generated from a plurality of light emitting elements is extracted from the plurality of light emitting elements.

  Accordingly, an object of the present invention is to provide a light-emitting device that can extract light generated from a plurality of light-emitting elements from one light-emitting element.

  According to the present invention, the above problem is solved by the following means.

  The present invention provides a substrate, an end surface light emitting element provided on the substrate, and the substrate on the base so as to intersect an axis substantially perpendicular to the light emitting end surface starting from the light emitting end surface of the end surface emitting element. The light emitting device is characterized in that the end surface light emitting element has a light emitting region above an upper surface of the light emitting diode element.

  Further, the present invention is the above light emitting device, wherein the emission wavelength of the edge-emitting element is longer than the emission peak wavelength of the light emitting diode element.

  In addition, the present invention is the light emitting device described above, wherein an optical structure is provided on the upper surface of the light emitting diode element.

  Further, the present invention is the above light emitting device, wherein the light emitting diode element has a growth substrate peeled off.

  In addition, the present invention is the light-emitting device described above, characterized in that a plurality of the edge-emitting elements are provided.

  Further, the present invention is the above light emitting device, wherein the plurality of end surface light emitting elements emit light to the light emitting diode element from different directions.

  Further, the present invention is the light emitting device described above, wherein an insulating light reflecting material is provided in at least a partial region on the side surface of the light emitting diode element.

  Further, the present invention is the above light emitting device, wherein the light emitting diode is provided around the light emitting diode so as to cover the insulating reflective material.

  Further, the present invention is the above light emitting device, wherein the light emitting diode element and the end surface light emitting element are sealed with a sealing material.

  Further, the present invention is the above light emitting device, wherein a wavelength conversion member including a phosphor excited by light of the light emitting diode element is provided on an upper surface of the light emitting diode element.

  ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device which can take out the light produced from the several light emitting element from one light emitting element can be provided.

1 is a schematic conceptual diagram of a light emitting device according to an embodiment of the present invention. It is a figure explaining an example of an optical structure. It is a figure explaining an example of an optical structure. It is a figure which shows an example of a mode that several end surface light emitting type elements were arrange | positioned so that light might be radiate | emitted to a light emitting diode element from a different direction. It is a figure which shows the assembly method of the light-emitting device which concerns on Example 1 of this invention. It is a figure which shows the light-emitting device based on Example 2 of this invention. It is a figure which shows the light-emitting device based on Example 3 of this invention.

  EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, referring attached drawing. Note that illustration of members that are not the subject of explanation may be omitted as appropriate.

  FIG. 1 is a schematic conceptual diagram of a light emitting device according to an embodiment of the present invention.

  As shown in FIG. 1, the light emitting device according to the embodiment of the present invention includes a base 11, an end surface light emitting element 13 provided on the base 11, and a light emitting diode element 12. The light emitting diode element 12 is provided so as to cross an axis substantially perpendicular to the light emitting end face of the end face light emitting element 13. This axis is within the light emitting end face of the edge emitting element 13, more preferably within the light emitting region within the light emitting end face of the edge emitting element 13 (area corresponding to the end face of the optical waveguide of the edge emitting element 13). The starting point. Hereinafter, this axis is also referred to as an optical axis of the edge-emitting element 13.

  In the light emitting device according to the embodiment of the present invention, the end surface light emitting element 13 has a light emitting region above the upper surface of the light emitting diode element 12, and the light of the end surface light emitting element 13 is reflected on the upper surface of the light emitting diode element 12. And is extracted from the light emitting diode element 12.

  Therefore, according to the light emitting device according to the embodiment of the present invention, light generated from a plurality of light emitting elements (light emitting diode element 12 and end surface light emitting element 13) can be extracted from one light emitting element (light emitting diode element 12). it can. For this reason, light generated from a plurality of light-emitting elements can be extracted from a minute region corresponding to one light-emitting element.

  In the case of taking out light generated from a plurality of light emitting elements from each of the plurality of light emitting elements, color unevenness occurs when the optical system (lens) is passed through, thereby reducing the optical performance of a system such as a lighting device or a liquid crystal backlight. Cause. However, according to the light emitting device according to the embodiment of the present invention, such color unevenness can be effectively suppressed. Further, in the case of using a plurality of light emitting elements emitting substantially the same color, uneven luminance can be effectively suppressed.

  In the light emitting device according to the embodiment of the present invention, the upper surface of the light emitting diode element 12 is a main light extraction surface from which light from the light emitting diode element 12 and the end surface light emitting element 13 is extracted. In this way, the region from which light is extracted can be more limited than when light from a plurality of light emitting elements is extracted from the entire light emitting diode element 12.

  Details will be described below.

[Substrate]
As the base 11, for example, a mounting substrate provided with wiring can be used. Alternatively, the package may include a lead frame and a molded body that integrally holds the lead frame. A light emitting diode element 12 and an end surface light emitting element 13 are provided on the base 11.

  The base 11 has a high place 14 such as a slope or a hill. The end surface light emitting element 13 is provided on such a high place 14 and has a light emitting region above the upper surface of the light emitting diode element 12. Light from the end surface light emitting element 13 is emitted from the light emitting diode element 12. Incident on the top surface of.

  The light emitting diode element 12 and the edge emitting element 13 can be directly provided on the base 11 by being placed on the top surface of the base 11, or placed on a submount or the like placed on the top surface of the base 11. By doing so, it can also be provided indirectly on the substrate 11. In the present embodiment, the edge-emitting element 13 is placed on the base 11 while being placed on the submount 15.

  In order to efficiently emit the light extracted from the light emitting diode element 12 to the outside of the apparatus, the upper portion of the base 11 may be configured to have translucency. Such a substrate 11 is configured by newly bonding a molded body such as a translucent resin or glass, or by molding the substrate 11 separately into a translucent part and a light-reflective part. be able to.

[Light emitting diode element]
(Example of light-emitting diode element)
As the light emitting diode element 12, various light emitting diode elements can be used. In addition, for example, a growth substrate on which a semiconductor layer constituting an element structure is grown can be used as the light emitting diode element 12, and the semiconductor layer constituting the element structure with the growth substrate peeled off is used as the light emitting diode element. 12 can also be used. In this case, the light of the light emitting diode element 12 can be easily taken out efficiently. In addition, the thickness of a semiconductor layer is 3 micrometers-10 micrometers, for example.

<Semiconductor layer>
As the semiconductor layer, for example, a nitride semiconductor layer can be used. The nitride semiconductor can change the band gap energy in a range corresponding to the ultraviolet region to the visible / infrared region depending on its composition. In particular, a nitride semiconductor can constitute a semiconductor layer capable of efficiently emitting short-wavelength light such as ultraviolet light and blue light. Such a nitride semiconductor layer capable of efficiently emitting short-wavelength light is unlikely to absorb longer-wavelength light such as green and red light. For this reason, by using a nitride semiconductor layer for the semiconductor layer of the light emitting diode element 12, it is possible to suppress the loss due to light absorption of the edge emitting element 13 and to efficiently extract the light of the edge emitting element 13.

<Board>
The light emitting diode element 12 may include a semiconductor layer and a substrate. As the substrate, a translucent substrate is preferably used. Moreover, the thickness of a board | substrate shall be 50 micrometers-200 micrometers, for example. Note that the substrate may be a growth substrate used for growing the semiconductor layer, or may be a substrate attached to the semiconductor layer. When the substrate is attached to the semiconductor layer, for example, the growth substrate is peeled off from the semiconductor layer by lift-off or the like. After that, if a substrate is attached to the semiconductor layer directly through a light-transmitting adhesive or by thermocompression bonding or surface activation bonding, light can be easily extracted efficiently. As the growth substrate, for example, a sapphire substrate or a GaN substrate can be used. In addition to these, a glass substrate or the like can be used as the substrate attached to the semiconductor layer, and the substrate may contain a phosphor. When the semiconductor layer is on the upper surface side, a metal substrate such as copper, tungsten, or an alloy thereof, a silicon substrate, or the like can be used.

(Light-emitting diode element mounting)
For example, the light-emitting diode element 12 can be flip-chip mounted on the base 11 using a gold bump or the like by providing a positive electrode and a negative electrode on the same surface side. This eliminates the need for an electrode or wire on the upper surface side of the light emitting diode element 12, thereby improving the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13.

  In this case, as the electrode of the light emitting diode element 12, for example, a highly reflective conductive material such as silver or aluminum can be used. In this way, light is efficiently reflected by the electrodes and travels toward the upper surface of the light emitting diode element 12, so that the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved.

  Further, an insulating light reflecting material can be filled under the electrode of the light emitting diode element 12 (for example, between the electrode and the mounting substrate). In this way, light is efficiently reflected by the insulating light reflecting material and travels toward the upper surface of the light emitting diode element 12, so that the light utilization efficiency of the light emitting diode element 12 and the edge emitting element 13 can be improved. In this case, the electrode of the light emitting diode element 12 may be a translucent electrode using a translucent conductive material such as ITO.

(Insulating light reflecting material on the side of the light emitting diode element)
An insulating light reflecting material can be provided in at least a partial region on the side surface of the light emitting diode element 12. In particular, it is preferable to provide an insulating light reflecting material on all side surfaces of the light emitting diode element 12. By doing so, it is possible to clearly identify the upper surface of the light emitting diode element 12 as the light emitting region, giving up the insulating light reflecting material. Further, since the light of the edge-emitting element 13 incident on the light-emitting diode element 12 is reflected by the insulating light reflecting material and easily extracted from the upper surface of the light-emitting diode element 12, the light use efficiency of the edge-emitting element 13 is improved. Can be made. Furthermore, since the light reflected by the insulating light reflecting material is scattered, the uniformity of the light intensity on the upper surface of the light emitting diode element 12 can be improved.

  Further, a light absorbing material may be provided around the light emitting diode element 12 in order to absorb the light irradiated to the portion other than the light emitting diode element 12 out of the light of the edge emitting element 13. Thereby, the upper surface of the light emitting diode element 12 can be more clearly specified as the light emitting region. In particular, the light absorbing material is preferably provided so as to cover the insulating light reflecting material provided on the side surface of the light emitting diode element 12. Thereby, the upper surface of the light emitting diode element 12 can be clearly specified as the light emitting region while efficiently extracting the light from the light emitting diode element 12 and the end surface light emitting element 13. Carbon or the like can be used for the light absorbing material.

  The insulating light reflecting material is fixed to at least a partial region on the side surface of the light emitting diode element 12 by being mixed and adhered to the light transmitting member or by electrophoretic electrodeposition. What is necessary is just to mix | blend a light absorption material with a translucent member and to fix on a base | substrate or an insulating light reflection material.

(Wavelength selective material on the upper surface of the light emitting diode element)
On the upper surface of the light emitting diode element 12, a wavelength selective material (for example, a dielectric multilayer film) that reflects the light of the edge emitting element 13 and transmits other light can be provided.

  In this way, the light from the edge-emitting element 13 is reflected by the wavelength selective material and is easily extracted from the upper surface of the light emitting diode element 12, and the light from the light emitting diode element 12 is transmitted through the wavelength selective material. Since it becomes easy to take out from the upper surface of the light emitting diode element 12, the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved.

(Optical structure)
<Top surface of light emitting diode element>
An optical structure can be formed on the upper surface of the light emitting diode element 12. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the upper surface of the light emitting diode element 12 and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of the light intensity can be improved.

  When the light emitting diode element 12 including the substrate and the semiconductor layer is used and the substrate is on the upper surface side, a method of directly processing the substrate by etching, laser processing, or blasting, or a light transmitting member is printed on the substrate. The optical structure can be formed by a method or the like.

  In addition, when the light emitting diode element 12 including the substrate and the semiconductor layer is used and the semiconductor layer is on the upper surface side, or when the light emitting diode element 12 not including the substrate is used, the semiconductor layer and the electrode of the light emitting diode element 12 are provided. The above optical structure can be formed by a method of directly processing by etching or the like, a method of printing and forming a translucent member on a semiconductor layer or an electrode, and the like.

<Semiconductor layer side surface of light emitting diode element substrate>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can also be formed on the surface of the substrate of the light emitting diode element 12 on the semiconductor layer side. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the surface of the substrate on the semiconductor layer side, and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of light intensity on the upper surface can be improved.

<Inside of light emitting diode element substrate>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can also be formed inside the substrate of the light emitting diode element 12. This makes it possible to change the traveling direction of light inside the substrate and to be easily extracted from the upper surface of the light emitting diode element 12 and to improve the uniformity of light intensity on the upper surface of the light emitting diode element 12. The optical structure in this case can be formed using a femtosecond laser or the like.

<Example of optical structure>
FIG. 2 is a diagram illustrating an example of an optical structure. As the optical structure, for example, convex and / or concave can be preferably used. Convex and concave portions can be formed regularly or irregularly. Examples of the regularly formed convexes and concaves include, for example, a single convex or concave component such as a lens shown in FIG. 2A or a prism shown in FIG. An example in which a plurality of protrusions and recesses are configured by a pattern can be given. Each of the plurality of convexes and concaves may be the lens or the prism, or a polyhedron having a trapezoidal cross-sectional view (preferably the side surface is inclined or curved) as shown in FIG. But you can. Examples of irregularly formed protrusions and depressions include, for example, unevenness on the roughened surface (FIG. 2D).

  FIG. 3 is a diagram illustrating an example of an optical structure. As shown in FIG. 3, the optical structure can be provided as a regular concavo-convex structure extending in a direction substantially parallel to the light emitting end face of the edge-emitting element 13. If an optical structure such as a prism or a diffraction grating is formed in this way, the light emitting diode element 12 and the edge emitting element in a plane substantially perpendicular to the light emitting end face of the edge emitting element 13 (in the θY direction in FIG. 3). 13 light distribution can be easily adjusted.

(Wavelength conversion member on the upper surface of the light emitting diode element)
A wavelength conversion member can be provided on the upper surface of the light emitting diode element 12. In this way, the wavelength of light from the light-emitting diode element 12 and the edge-emitting element 13 can be converted, so that it is easy to increase the number of wavelengths. The wavelength converting member includes, for example, a phosphor, and is fixed to the upper surface of the light emitting diode element 12 by being mixed and adhered to the light transmitting member or by electrophoretic electrodeposition. The phosphor may be any material that is excited by the light from the light emitting diode element 12.

  If one light emitting diode element 12 whose emission wavelength is blue, one end surface light emitting element 13 whose emission wavelength is red, and a wavelength conversion member including a phosphor whose emission wavelength is yellow are provided. In addition, redness can be added to the white light obtained from the light emitting diode element 12 and the phosphor, and light emission with higher color rendering can be achieved.

(Light scattering material on the upper surface of the light emitting diode element)
A translucent member containing a light scattering material or the like can be provided on the upper surface of the light emitting diode element 12. In this case, since light is scattered by a translucent member including a light scattering material, the uniformity of light intensity on the upper surface of the light emitting diode element 12 can be improved. The translucent member containing the light scattering material is fixed to the upper surface of the light emitting diode element 12 by, for example, adhesion or electrophoretic electrodeposition.

[Edge-emitting device]
(Edge-emitting elements and directivity)
The edge-emitting element 13 is a light-emitting element that emits directional light from the end face, and has an optical waveguide that extends in a direction substantially perpendicular to the light-emitting end face in a semiconductor layer constituting the element structure. As the specific edge emitting element 13, for example, a light emitting element such as a semiconductor laser element or a super luminescence diode can be used. If these are used, the light from the edge-emitting element 13 can be efficiently incident on the upper surface of the light-emitting diode element 12.

(Emission wavelength of edge-emitting element)
The emission wavelength of the edge-emitting element 13 is preferably longer than the emission peak wavelength of the light-emitting diode element 12. In general, the light emitting diode element extremely easily absorbs light in a wavelength region shorter than the emission peak wavelength. Therefore, in this case, the light from the edge-emitting element 13 is not easily absorbed by the light-emitting diode element 12, so that the light from the edge-emitting element 13 can be easily extracted from the light-emitting diode element 12. Use efficiency improves.

(Number of edge-emitting elements)
A plurality of edge-emitting elements 13 can be provided. In this way, it is possible to easily increase the number of wavelengths by using elements that emit light of different wavelengths as the respective edge-emitting elements 13. In addition, since it is possible to supply power separately to the plurality of edge-emitting elements 13, the heat source (edge-emitting element 13) can be dispersed.

  A white light source can be easily obtained by providing two end surface light emitting elements 13 whose emission wavelengths are green and red and one light emitting diode element 12 whose emission wavelength is blue.

  FIG. 4 is a plan view showing an example of a state in which a plurality of end surface light emitting elements are arranged to emit light to the light emitting diode elements from different directions.

  As shown in FIG. 4, the plurality of end surface light emitting elements 13 can be arranged to emit light to the light emitting diode elements 12 from different directions. In this way, the heat source can be more dispersed and multi-wavelength can be easily achieved.

  In particular, the plurality of end surface light emitting elements 13 have their optical axes substantially rotationally symmetric with respect to the central axis of the light emitting diode element 12, that is, are arranged equally in the top view of the substrate 11 (for example, two end surface light emitting elements 13 are arranged). It is preferable to arrange them so that they are arranged at intervals of 180 ° when arranged, and arranged at intervals of 120 ° when three end surface light emitting elements 13 are arranged.

  If the plurality of end surface light emitting elements 13 are equally arranged as described above, it is possible to reduce the bias of the light distribution of the end surface light emitting elements 13 extracted from the light emitting diode elements 12. This is particularly effective when the end face light emitting elements 13 having substantially the same emission wavelength are disposed. Further, the present invention may be applied to a case where a plurality of end surface light emitting elements 13 having substantially the same emission wavelength are used as a set, and a plurality of sets of end surface light emitting elements having different emission wavelengths are used (for example, the emission wavelength is 2). Two end surface light emitting devices are arranged at intervals of 180 ° when viewed from the top of the substrate, and two end surface light emitting devices having a light emission wavelength of green (for example, at an interval of 90 ° with respect to the red end surface light emitting device) in the same manner Arranged at intervals of 180 °).

(Tilt angle of edge-emitting element)
The edge-emitting element 13 is preferably disposed so as to be inclined so that the optical axis thereof is greater than 0 ° and smaller than 45 ° with respect to the central axis of the light-emitting diode element 12. In this way, the light from the edge-emitting element 13 can be efficiently incident on the light emitting diode element 12. Note that the edge-emitting element 13 can also be arranged so that the emitted light is perpendicularly incident on the upper surface of the translucent light-emitting diode element 12.

[Between light-emitting diode element and edge-emitting element]
An optical component such as a lens can be provided between the light emitting diode element 12 and the end surface light emitting element 13. In this way, since the direction of the light emitted from the edge-emitting element 13 can be adjusted, the light utilization efficiency of the edge-emitting element 13 can be improved. The optical component can be provided, for example, on the upper surface of the submount 15 on which the end surface light emitting element 13 is placed on the light emitting diode element 12 side.

[Sealing]
The light emitting diode element 12 and the end surface light emitting element 13 can be sealed with a sealing material. As the sealing material, for example, a translucent resin or glass can be used. In this way, the refractive index between the light emitting diode element 12 and the end surface light emitting element 13 can be increased, and the directivity of the end surface light emitting element 13 can be increased. Efficiency can be improved.

[Various materials]
Although the light emitting device according to the embodiment of the present invention has been described above, as the insulating light reflecting material, the light reflecting material, the translucent member, the light scattering material, and the phosphor described above, for example, the following can be used. Can be used.

(Insulating light reflector)
As the insulating light reflecting material, for example, inorganic powder of silicon dioxide, titanium dioxide, aluminum oxide, calcium carbonate, barium sulfate, or a mixture thereof can be used.

(Light reflecting material)
As the light reflecting material, in addition to the insulating light reflecting material described above, for example, a metallic reflecting material such as aluminum or silver can be used.

(Translucent member)
As the translucent member, for example, an alicyclic epoxy resin, a silicone resin, a fluororesin, a glass precursor, or a mixture thereof can be used.

(Light scattering material)
As the light scattering material, for example, silicone or acrylic resin fine particles, or hollow glass beads, or inorganic powder of silicon dioxide, titanium dioxide, zirconium dioxide, aluminum oxide, zinc oxide, lead carbonate, barium sulfate, zinc sulfide, or Mixtures thereof can be used.

(Phosphor)
As the phosphor, for example, YAG, TAG, and silicate phosphors can be used.

  FIG. 5 is a diagram illustrating an assembling method of the light emitting device according to the first embodiment of the invention. Note that some drawings include a cross-sectional view (a cross section when the light-emitting device is cut along a broken line in the plan view) in addition to the plan view.

  First, as shown in FIG. 5A, a wafer 101 having a semiconductor layer grown on a translucent substrate is prepared, and a wavelength selective material 102 is provided thereon.

  Next, as shown in FIG. 5B, a light scattering material 103 is applied to the wafer 101.

  Next, as shown in FIG. 5C, the wafer 101 is cut and separated into a plurality of light emitting diode elements 104.

  Next, as shown in FIG. 5D, a mounting substrate 105 in which an electric circuit is three-dimensionally formed on the surface of an injection molded product is prepared. The mounting board has a flat surface A and a slope B.

  Next, as shown in FIG. 5E, one light-emitting diode element 104 is flip-chip mounted on the flat surface A of the flat surface A and the slope B of the mounting substrate 105, and the light-emitting diode is obtained. An insulating light reflecting material 106 is applied to the side surface of the element 104.

  Next, as shown in FIG. 5 (f), the semiconductor laser element 108 mounted on the submount 107 is mounted on the inclined surface B of the flat surface A and the inclined surface B of the mounting substrate 105.

The light-emitting device according to Example 1 of the present invention thus assembled can be configured, for example, as shown in 1-3 shown in the following table. In Table 1, LD is a semiconductor laser element, and LED is a light emitting diode element. Note that the LD and the LED can emit light simultaneously or independently. Moreover, in the structure (3) in Table 1, it is preferable that the light emission wavelength of LD is longer than the light emission peak wavelength of LED in a blue region.

  6A and 6B are diagrams showing a light-emitting device according to Example 2 of the present invention, in which FIG. 6A is a plan view, and FIG. 6B is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 6A). In the case).

  The light emitting device according to the second embodiment of the present invention is different from the light emitting device according to the first embodiment of the present invention in that the wavelength conversion member 109 is provided on the upper surface of the light emitting diode element 104. The wavelength conversion member 109 is obtained by printing a silicone resin containing a phosphor.

The light-emitting device according to Example 2 of the present invention thus assembled can be configured as shown in 1 and 2 shown in the following table, for example. In Table 2, LD is a semiconductor laser element, and LED is a light emitting diode element. In the configuration (1) in Table 2, the LD and the LED can emit light simultaneously or independently. By simultaneously emitting light and changing only the light intensity of the LD whose emission wavelength is red, the color rendering property can be changed. Further, in the configuration (2) in Table 2, the emission wavelength of the LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  As the wavelength conversion member 109, in addition to printing a silicone resin blended with a phosphor, a solid body (silicone resin or glass material) blended with a phosphor can be mounted.

  In the above description, the upper and side surfaces of the wavelength conversion member 109 are exposed. However, after the wavelength conversion member 109 is placed on the light emitting diode element 104, the wavelength conversion member 109 is sealed with a sealing material including an insulating light reflecting material. By doing so, the side surface of the wavelength conversion member 109 may also be covered with the sealing material. At this time, the upper surface of the wavelength conversion member 109 is exposed from the sealing material.

  7A and 7B are diagrams showing a light-emitting device according to Example 3 of the present invention, where FIG. 7A is a plan view, and FIG. 7B is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 7A). In the case).

  The light emitting device according to the third embodiment of the present invention is different from the light emitting device according to the first embodiment of the present invention in that it includes two semiconductor laser elements 108.

The light-emitting device according to Example 3 of the present invention thus assembled can be configured as 1 shown in the following table, for example. In Table 3, LD is a semiconductor laser element, and LED is a light emitting diode element. Each LD and LED can emit light simultaneously or independently. In the configuration (2) in Table 3, the emission wavelength of each LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  The light emitting devices according to the first to third embodiments of the present invention described above can be used for various applications by appropriately selecting the wavelengths of light emitted from a plurality of elements. For example, when emitting red, green and blue light from multiple elements, lighting device, liquid crystal backlight, portable strobe, CIS scanner, amusement (light decoration such as pachinko), self-luminous display, projection display (Pico projector, projector, etc.), retinal scanning display, etc.

  As mentioned above, although embodiment and the Example of this invention were described, these description is related to an example of this invention, and this invention is not limited at all by these description.

DESCRIPTION OF SYMBOLS 11 Base body 12 Light emitting diode element 13 End surface emitting element 14 Height 15 Submount 101 Wafer 102 Wavelength selective material 103 Light scattering material 104 Light emitting diode element 105 Mounting substrate 106 Insulating light reflecting material 107 Submount 108 Semiconductor laser element 109 Wavelength conversion member A Flat surface B Slope

Claims (10)

A substrate;
An edge-emitting element provided on the substrate;
A light emitting diode element provided on the base so as to cross an axis substantially perpendicular to the light emitting end face starting from the inside of the light emitting end face of the end face light emitting element;
With
The end surface light emitting element has a light emitting region above an upper surface of the light emitting diode element.
A light emitting device characterized by that.   The light emitting device according to claim 1, wherein an emission wavelength of the edge-emitting element is longer than an emission peak wavelength of the light emitting diode element.   The light emitting device according to claim 1, further comprising an optical structure on an upper surface of the light emitting diode element.   The light emitting device according to claim 1, wherein a growth substrate is peeled off from the light emitting diode element.   The light-emitting device according to claim 1, comprising a plurality of the edge-emitting elements.   The light emitting device according to claim 5, wherein the plurality of end surface light emitting elements emit light to the light emitting diode elements from different directions.   The light emitting device according to any one of claims 1 to 6, wherein an insulating light reflecting material is provided in at least a partial region of the side surface of the light emitting diode element.   The light emitting device according to claim 7, wherein a light absorbing material is provided around the light emitting diode so as to cover the insulating reflective material.   The light emitting device according to claim 1, wherein the light emitting diode element and the end surface light emitting element are sealed with a sealing material.   The wavelength conversion member containing the fluorescent substance excited by the light of this light emitting diode element is provided in the upper surface of the said light emitting diode element, The any one of Claims 1-9 characterized by the above-mentioned. Light emitting device.

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