CN104681681B - A kind of substrat structure and preparation method thereof for the growth of III-V group-III nitride - Google Patents
A kind of substrat structure and preparation method thereof for the growth of III-V group-III nitride Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 101
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 100
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 100
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 100
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 100
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 100
- 238000004519 manufacturing process Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 29
- 238000001259 photo etching Methods 0.000 claims description 17
- 229920000297 Rayon Polymers 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 9
- 238000010992 reflux Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 5
- 238000000605 extraction Methods 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 description 12
- 239000010980 sapphire Substances 0.000 description 12
- 230000008901 benefit Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000003139 buffering effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- -1 GaAs(GaAs) Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Abstract
The present invention provides a kind of substrat structure and its manufacturing method for the growth of III-V group-III nitride, 1) manufacturing method in growth substrates comprising steps of define multiple graphic elements, and form V-groove between the multiple graphic element；2) buffer layer is formed in the respectively graphic element surface；3) SiO is formed in the respectively buffer-layer surface2Layer；4) in the respectively SiO2The central region of layer etches spaced multiple SiO2Protrusion, and retain the SiO of the buffer layer week side region2Side layer.The present invention first uses V-groove to be separated out multiple graphic elements, then prepares one layer of buffer layer for epitaxial light emission structure growth containing hexagonal lattice structure, and prepare bag-like SiO by etching technics2Protrusion and SiO2Side layer, the bag-like SiO2Protrusion not only can guarantee the crystal quality of growth epitaxial light emission structure, but also can improve light extraction efficiency, the SiO2Side layer can limit vertical-growth of the epitaxial light emission structure near the V-groove, improve the crystal quality of epitaxial light emission structure.
Description
Technical field
The present invention relates to field of semiconductor illumination, more particularly to a kind of substrate knot for the growth of III-V group-III nitride
Structure and its manufacturing method.
Background technique
Semiconductor lighting has the remarkable advantages such as service life length, energy-saving and environmental protection, safety as new and effective solid light source, will
Leaping again after incandescent lamp, fluorescent lamp in history is illuminated as the mankind, application field is expanding rapidly, positive to drive
The upgrading of the industries such as traditional lighting, display, economic benefit and social benefit are huge.Just because of this, semiconductor lighting quilt
Generally regard that one of 21 century new industry most with prospects and the most important system of coming years optoelectronic areas are high as
One of point.Light emitting diode is by III-V compound, such as GaAs(GaAs), GaP(gallium phosphide), GaAsP(gallium arsenide phosphide)
Made of equal semiconductors, core is PN junction.Therefore it has the I-N characteristic of general P-N junction, i.e. forward conduction, reversely end,
Breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects the area P by the area N, empty
The area N is injected by the area P in cave.Minority carrier (few son) a part into other side region is compound with majority carrier (more sons) and sends out
Light.
Existing light emitting diode generally uses sapphire as substrate is prepared, in order to improve the light efficiency out of light emitting diode
Rate can prepare multiple bulge-structures of periodic arrangement in sapphire substrate surface, then prepare the luminous epitaxy junction of GaN base again
Structure.However, the Sapphire Substrate with bulge-structure, the deposition of directly progress GaN epitaxial light emission structure is often brought huge
Crystal defect, seriously affect the brightness of light emitting diode, therefore, a kind of existing preparation process is, prior to 1100 DEG C or so
H is carried out to the sapphire substrate surface with bulge-structure2Reduction treatment then passes to reaction source, using low temperature chemical vapor
Sedimentation deposits one layer of low-temperature gan layer in sapphire substrate surface, then stops being passed through for reaction source, and be warming up to 1050 DEG C of left sides
The right side recombinates this layer of low-temperature gan layer on the platform of sapphire substrate surface, forms the nucleation of GaN base epitaxial light emission structure
Position finally starts to deposit GaN base epitaxial light emission structure, the after the completion preparation of supervention optical diode.
For above light-emitting diodes tube preparation method, need multistep that could form the nucleation of GaN base epitaxial light emission structure
Position, complex process, higher cost, moreover, the refractive index of Sapphire Substrate is higher, it is 1.8 or so, even if being formed in its surface
Bulge-structure also has very big limitation to the promotion of the light emission rate of light emitting diode.
Therefore it provides one kind can effectively improve GaN base light emitting growth quality and can improve light emitting diode
The preparation method of light emission rate is necessary.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide one kind to be used for III-V group-III nitride
The substrat structure and its manufacturing method of growth, for solving light emitting diode growth quality in the prior art and light emission rate is low etc. asks
Topic.
In order to achieve the above objects and other related objects, the present invention provides a kind of lining for the growth of III-V group-III nitride
The manufacturing method of bottom structure, at least includes the following steps:
1) growth substrates are provided, multiple graphic elements are defined in the growth substrates, and in the multiple figure
V-groove is formed between unit；
2) buffer layer for the growth of subsequent epitaxial light emission structure is formed in the respectively graphic element surface；
3) SiO is formed in the respectively buffer-layer surface2Layer；
4) by photoetching process in the respectively SiO2The central region of layer etches spaced multiple SiO2Protrusion, and reveal
The each SiO out2Buffer layer between protrusion, and retain the SiO of the buffer layer week side region2Side layer.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The buffer layer with a thickness of 50~400 angstroms.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The buffer layer is using Al prepared by chemical vapour deposition techniquexGa1-xN layers, the temperature range of 0≤X≤0.5, preparation is
450~700 DEG C.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The buffer layer is using AlN prepared by sputtering method layers, and AlN layers of the crystal orientation is (0001) orientation.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The buffer layer is BN material layer.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
Step 3) using plasma enhances chemical vapour deposition technique and forms SiO in the respectively buffer-layer surface2Layer, the SiO2The thickness of layer
Degree is 0.2~3 μm.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The multiple SiO2Protrusion is arranged in periodic intervals, SiO2The width of protrusion is 1~4 μm, and spacing is 0.5~2 μm.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
The SiO2The width of side layer is 10~30 μm.
A kind of preferred embodiment of manufacturing method as the substrat structure for the growth of III-V group-III nitride of the invention,
SiO described in step 4)2Protrusion is SiO2Bag-like protrusion, SiO2Cone-shaped bulge or SiO2Pyramid shape protrusion.
Further, step 4) the following steps are included:
4-1) in the respectively SiO2Layer surface forms photoresist layer, by exposure technology by the central region of the respectively photoresist layer
It is fabricated to spaced multiple photoetching blob of viscoses；
4-2) make the multiple photoetching blob of viscose reflux at multiple bag-like photoetching blob of viscoses by being heated to reflux technique；
The shape of the respectively bag-like photoetching blob of viscose 4-3) is transferred to by the SiO using sense coupling method2
Layer, forms multiple SiO2Bag-like protrusion, and expose the respectively SiO2Buffer layer between bag-like protrusion, is used for subsequent luminous epitaxy junction
The growth of structure, and retain the SiO of the buffer layer week side region2Side layer.
The present invention also provides a kind of substrat structures for the growth of III-V group-III nitride, include at least:
Growth substrates, the growth substrates are divided into multiple graphic elements by multiple V-grooves；
For the buffer layer of subsequent epitaxial light emission structure growth, it is incorporated into the respectively graphic element surface；And
SiO2Layer, including being alternatively arranged in multiple SiO of the respectively buffer layer central region2Protrusion, and it is located at the respectively buffering
The SiO of all side region of layer2Side layer.
As a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention, the buffer layer
With a thickness of 50~400 angstroms.
As a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention, the buffer layer
For the AlN layer of (0001) crystal orientation；Or AlxGa1-xN layers, wherein 0≤X≤0.5；Or BN material layer.
It is the multiple as a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention
SiO2Protrusion is arranged in periodic intervals, SiO2The width of protrusion is 1~4 μm, and spacing is 0.5~2 μm, the SiO2Protrusion
Height is 0.2~3 μm.
As a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention, the SiO2It is convex
Rising is SiO2Bag-like protrusion, SiO2Cone-shaped bulge or SiO2Pyramid shape protrusion.
As a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention, the SiO2Week
The width of side layer is 10~30 μm.
As described above, the present invention provides a kind of substrat structure and its manufacturing method for the growth of III-V group-III nitride, institute
Manufacturing method is stated comprising steps of 1) providing a growth substrates, multiple graphic elements are defined in the growth substrates, and in institute
It states and forms V-groove between multiple graphic elements；2) it is formed in the respectively graphic element surface and is grown for subsequent epitaxial light emission structure
Buffer layer；3) SiO is formed in the respectively buffer-layer surface2Layer；4) by photoetching process in the respectively SiO2The central region etching of layer
Spaced multiple SiO out2Protrusion, and expose the respectively SiO2Buffer layer between protrusion, and retain buffer layer week lateral areas
The SiO in domain2Side layer.The present invention first uses V-groove to be separated out multiple graphic elements, is conducive in the techniques such as subsequent sliver
Then the quality for guaranteeing light emitting diode prepares one layer of buffering for epitaxial light emission structure growth containing hexagonal lattice structure
Layer, and by photoresist be heated to reflux technique and ICP etching technics prepares the bag-like SiO of periodic arrangement2Protrusion and
SiO2Side layer, the bag-like SiO2Protrusion not only can guarantee the crystal quality of growth epitaxial light emission structure, but also can improve light-emitting diodes
The light extraction efficiency of pipe, the SiO2Side layer can limit vertical-growth of the epitaxial light emission structure near the V-groove, improve
The crystal quality of epitaxial light emission structure.Present invention process is simple, advantageously reduces manufacturing cost, is suitable for industrial production.
Detailed description of the invention
The manufacturing method step 1) that Fig. 1 is shown as the substrat structure for the growth of III-V group-III nitride of the invention is in
Existing structural schematic diagram.
The manufacturing method step 2 that Fig. 2 is shown as the substrat structure for the growth of III-V group-III nitride of the invention is in
Existing structural schematic diagram.
The manufacturing method step 3) that Fig. 3 is shown as the substrat structure for the growth of III-V group-III nitride of the invention is in
Existing structural schematic diagram.
Fig. 4~Fig. 6 is shown as the manufacturing method step 4) of the substrat structure for the growth of III-V group-III nitride of the invention
The structural schematic diagram presented.
Component label instructions
101 growth substrates
102 V-grooves
103 buffer layers
104 SiO2Layer
1041 SiO2Side layer
1042 SiO2Protrusion
105 photoresist layers
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to FIG. 1 to FIG. 6.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
Embodiment 1
As shown in Fig. 1~Fig. 6, the present embodiment provides a kind of manufactures of substrat structure for the growth of III-V group-III nitride
Method at least includes the following steps:
As shown in Figure 1, carrying out step 1) first, a growth substrates 101 are provided, are defined in the growth substrates 101
Multiple graphic elements, and V-groove 102 is formed between the multiple graphic element；
As an example, the material of the growth substrates 101 is one kind of sapphire, SiC, Si and ZnO.In the present embodiment
In, the growth substrates 101 are flat sheet type Sapphire Substrate, and surface is flat face.
The multiple graphic element corresponds to the luminescence unit of subsequent technique production.In the present embodiment, it is cut using laser
It cuts, the techniques such as machine cuts or dry etching form V-groove 102 between the multiple graphic element.The V-groove is due to lacking
The platform being nucleated less, subsequent buffer layer 103, SiO2Layer 104, epitaxial light emission structure etc. will not be formed in the V-groove table substantially
Face can play good isolation effect.
As shown in Fig. 2, then carrying out step 2, formed in the respectively graphic element surface raw for subsequent epitaxial light emission structure
Long buffer layer 103.
In the present embodiment, the buffer layer 103 is using low temperature AI prepared by low temperature chemical vapor deposition methodxGa1- xN layers (0≤X≤0.5), preferably low temperature AIxGa1-xN layers (0≤X≤0.2), the temperature range of preparation is 450~700 DEG C.?
In the present embodiment, the low temperature AIxGa1-xThe preparation temperature of N layers (0≤X≤0.5) is 500 DEG C, the low temperature AIxGa1-xN layers (0
≤ X≤0.5) it is low-temperature gan layer or Al0.1Ga0.9N layers etc..
As an example, the buffer layer 103 with a thickness of 50~400 angstroms.In the present embodiment, the buffer layer 103
With a thickness of 200 angstroms.Certainly, thickness range recited herein is most preferred range, in other embodiments, the buffering
The thickness of layer 103 can be selected according to actual needs, and it's not limited to that.
Due to the low temperature AIxGa1-xThe temperature of N layers of preparation is lower, and the thickness of required preparation is smaller, the supervention after guarantee
While light epitaxial structure (especially GaN base epitaxial light emission structure) nucleating growth, production cost can be effectively reduced.
As shown in figure 3, then carrying out step 3), SiO is formed in respectively 103 surface of buffer layer2Layer 104.
In the present embodiment, using plasma enhancing chemical vapour deposition technique is formed in 103 surface of buffer layer
SiO2Layer 104.Certainly, in other embodiments, the SiO2Layer 104 can be using all expected preparation method systems
It is standby, one kind that place enumerates that it's not limited to that.
As an example, the SiO2Layer 104 with a thickness of 0.2~3 μm.In the present embodiment, the SiO2Layer 104
With a thickness of 1 μm.
As shown in Fig. 4~Fig. 6, step 4) is finally carried out, by photoetching process in the respectively SiO2The central region of layer 104 is carved
Lose spaced multiple SiO out2Protrusion 1042, and expose the respectively SiO2Buffer layer 103 between protrusion 1042, and retain institute
State the SiO of 103 weeks side regions of buffer layer2Side layer 1041.
As an example, the multiple SiO2Protrusion 1042 is arranged in periodic intervals, SiO2The width of protrusion 1042 is 1~4
μm, spacing is 0.5~2 μm.In the present embodiment, the SiO2The period of protrusion 1042 is 3 μm, and width is 2 μm, and spacing is 1 μ
m。
As an example, the SiO2Protrusion 1042 is SiO2Bag-like protrusion.The more gentle SiO in surface2Bag-like protrusion can be with
Effectively improve the growth quality of subsequent epitaxial light emission structure (especially GaN base epitaxial light emission structure).Certainly, implement in others
In example, the SiO2Protrusion 1042 or SiO2Cone-shaped bulge, SiO2Pyramid shape protrusion etc., it's not limited to that.
Specifically, this step the following steps are included:
Step 4-1), in the respectively SiO2104 surface of layer form photoresist layer 105, will each photoresist by exposure technology
The central region of layer 105 is fabricated to spaced multiple photoetching blob of viscoses.
Step 4-2), make the multiple photoetching blob of viscose reflux at multiple bag-like photoetching blob of viscoses by being heated to reflux technique.By
Photoresist width in 103 side of buffer layer is larger, therefore thermal reflux influences it smaller, and shape is substantially not
Become.
Step 4-3), the shape of the respectively bag-like photoetching blob of viscose is transferred to using sense coupling method described
SiO2Layer 104, forms multiple SiO2Bag-like protrusion, and expose the respectively SiO2Buffer layer 103 between bag-like protrusion, for subsequent
The growth of epitaxial light emission structure, and retain the SiO of 103 weeks side regions of buffer layer2Side layer 1041.
As an example, the SiO2The width of side layer 1041 is 10~30 μm, in the present embodiment, the SiO2Side
The width of layer 1041 is 15 μm.The SiO2Side layer 1041 a degree of can limit subsequent epitaxial light emission structure described
Growth near V-groove 102 guarantees the growth quality of epitaxial light emission structure.
Certainly, different photoresist shapes, such as coniform, pyramid shape can be produced by different technique, with
This can prepare SiO for mask layer2Cone-shaped bulge, SiO2Pyramid shape protrusion etc..
Due to SiO2Refractive index be generally 1.3~1.4, have biggish reduction compared to Sapphire Substrate 101, therefore,
It can effectively improve the light emission rate of GaN base light emitting.
As shown in fig. 6, the present embodiment also provides a kind of substrat structure for the growth of III-V group-III nitride, include at least:
Growth substrates 101, the growth substrates 101 are divided into multiple graphic elements by multiple V-grooves 102；
For the buffer layer 103 of subsequent epitaxial light emission structure growth, it is incorporated into the respectively graphic element surface；And
SiO2Layer 104, including being alternatively arranged in multiple SiO of respectively 103 central region of buffer layer2Protrusion 1042, Yi Jiwei
In the SiO of respectively 103 weeks side regions of buffer layer2Side layer 1041.
As an example, the material of the growth substrates 101 is one kind of sapphire, SiC, Si and ZnO.In the present embodiment
In, the growth substrates 101 are Sapphire Substrate.
As an example, the buffer layer 103 with a thickness of 50~400 angstroms.
In the present embodiment, the buffer layer 103 is AlxGa1-xN layers, wherein 0≤X≤0.5.
As an example, the multiple SiO2Protrusion 1042 is arranged in periodic intervals, SiO2The width of protrusion 1042 is 1~4
μm, spacing is 0.5~2 μm, the SiO2The height of protrusion 1042 is 0.2~3 μm.
As a kind of preferred embodiment of the substrat structure for the growth of III-V group-III nitride of the invention, the SiO2It is convex
Playing 1042 is SiO2Bag-like protrusion, SiO2Cone-shaped bulge or SiO2Pyramid shape protrusion.
As an example, the SiO2The width of side layer 1041 is 10~30 μm.
Embodiment 2
As shown in Fig. 1~Fig. 6, the present embodiment provides a kind of manufactures of substrat structure for the growth of III-V group-III nitride
Method, basic step such as embodiment 1, wherein the buffer layer 103 is the AlN using AlN prepared by sputtering method layers
The crystal orientation or main crystal orientation of layer are (0001) orientation.Compared to low temperature AIxGa1-xN layers, the benefit that sputtering method prepares AlN layers is
Thickness controllability is strong, the crystal orientation degree of orientation is higher, while being also beneficial to epitaxial light emission structure (especially GaN base epitaxial light emission structure)
Nucleating growth.
As shown in fig. 6, the present embodiment also provides a kind of substrat structure for the growth of III-V group-III nitride, tie substantially
Structure such as embodiment 1, wherein the buffer layer 103 be (0001) crystal orientation AlN layer or (0001) be main crystal orientation AlN layer.
Embodiment 3
As shown in Fig. 1~Fig. 6, the present embodiment provides a kind of manufactures of substrat structure for the growth of III-V group-III nitride
Method, basic step such as embodiment 1, wherein the buffer layer 103 is BN material layer, can be using the methods of sputtering preparation.
As shown in fig. 6, the present embodiment also provides a kind of substrat structure for the growth of III-V group-III nitride, tie substantially
Structure such as embodiment 1, wherein the buffer layer 103 is BN material layer.
As described above, the present invention provides a kind of substrat structure and its manufacturing method for the growth of III-V group-III nitride, institute
Manufacturing method is stated comprising steps of 1) providing a growth substrates, multiple graphic elements are defined in the growth substrates, and in institute
It states and forms V-groove between multiple graphic elements；2) it is formed in the respectively graphic element surface and is grown for subsequent epitaxial light emission structure
Buffer layer；3) SiO is formed in the respectively buffer-layer surface2Layer；4) by photoetching process in the respectively SiO2The central region etching of layer
Spaced multiple SiO out2Protrusion, and expose the respectively SiO2Buffer layer between protrusion, and retain buffer layer week lateral areas
The SiO in domain2Side layer.The present invention first uses V-groove to be separated out multiple graphic elements, is conducive in the techniques such as subsequent sliver
Then the quality for guaranteeing light emitting diode prepares one layer of buffering for epitaxial light emission structure growth containing hexagonal lattice structure
Layer, and by photoresist be heated to reflux technique and ICP etching technics prepares the bag-like SiO of periodic arrangement2Protrusion and
SiO2Side layer, the bag-like SiO2Protrusion not only can guarantee the crystal quality of growth epitaxial light emission structure, but also can improve light-emitting diodes
The light extraction efficiency of pipe, the SiO2Side layer can limit vertical-growth of the epitaxial light emission structure near the V-groove, improve
The crystal quality of epitaxial light emission structure.Present invention process is simple, advantageously reduces manufacturing cost, is suitable for industrial production.So
The present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (14)
1. a kind of manufacturing method of the substrat structure for the growth of III-V group-III nitride, which is characterized in that include at least following step
It is rapid:
1) growth substrates are provided, multiple graphic elements are defined in the growth substrates, and in the multiple graphic element
Between form V-groove；
2) buffer layer for the growth of subsequent epitaxial light emission structure is formed in the respectively graphic element surface；
3) SiO is formed in the respectively buffer-layer surface2Layer；
4) by photoetching process in the respectively SiO2The central region of layer etches spaced multiple SiO2Protrusion, and expose each
The SiO2Buffer layer between protrusion, and retain the SiO of the buffer layer week side region2Side layer；Wherein, the SiO2Side
The width of layer is greater than the SiO2The width of protrusion, the SiO2The width of protrusion is 1~4 μm, the SiO2The width of side layer
It is 10~30 μm；The SiO2Side layer limits growth of the subsequent epitaxial light emission structure near the V-groove, guarantees subsequent
The growth quality of epitaxial light emission structure.
2. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: the buffer layer with a thickness of 50~400 angstroms.
3. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: the buffer layer is using Al prepared by chemical vapour deposition techniquexGa1-xN layers, 0≤X≤0.5, the temperature range of preparation
It is 450~700 DEG C.
4. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: the buffer layer is using AlN prepared by sputtering method layers, and AlN layers of the crystal orientation is (0001) orientation.
5. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: the buffer layer is BN material layer.
6. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: step 3) using plasma enhances chemical vapour deposition technique and forms SiO in the respectively buffer-layer surface2Layer, the SiO2Layer
With a thickness of 0.2~3 μm.
7. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: the multiple SiO2Protrusion is arranged in periodic intervals, and spacing is 0.5~2 μm.
8. the manufacturing method of the substrat structure according to claim 1 for being used for the growth of III-V group-III nitride, feature exist
In: SiO described in step 4)2Protrusion is SiO2Bag-like protrusion, SiO2Cone-shaped bulge or SiO2Pyramid shape protrusion.
9. the manufacturing method of the substrat structure according to claim 8 for being used for the growth of III-V group-III nitride, feature exist
In: step 4) the following steps are included:
4-1) in the respectively SiO2Layer surface forms photoresist layer, is made the central region of the respectively photoresist layer by exposure technology
The multiple photoetching blob of viscoses being arranged at intervals；
4-2) make the multiple photoetching blob of viscose reflux at multiple bag-like photoetching blob of viscoses by being heated to reflux technique；
The shape of the respectively bag-like photoetching blob of viscose 4-3) is transferred to by the SiO using sense coupling method2Layer, shape
At multiple SiO2Bag-like protrusion, and expose the respectively SiO2Buffer layer between bag-like protrusion, the life for subsequent epitaxial light emission structure
It is long, and retain the SiO of the buffer layer week side region2Side layer.
10. a kind of substrat structure for the growth of III-V group-III nitride, which is characterized in that include at least:
Growth substrates, the growth substrates are divided into multiple graphic elements by multiple V-grooves；
For the buffer layer of subsequent epitaxial light emission structure growth, it is incorporated into the respectively graphic element surface；And
SiO2Layer, including being alternatively arranged in multiple SiO of the respectively buffer layer central region2Protrusion, and it is located at respectively buffer layer week
The SiO of side region2Side layer；Wherein, the SiO2The width of side layer is greater than the SiO2The width of protrusion, the SiO2It is convex
The width risen is 1~4 μm, the SiO2The width of side layer is 10~30 μm；The SiO2Side layer limits subsequent luminous extension
Growth of the structure near the V-groove, guarantees the growth quality of subsequent epitaxial light emission structure.
11. the substrat structure according to claim 10 for being used for the growth of III-V group-III nitride, it is characterised in that: described slow
Rush layer with a thickness of 50~400 angstroms.
12. the substrat structure according to claim 10 for being used for the growth of III-V group-III nitride, it is characterised in that: described slow
Rush the AlN layer that layer is (0001) crystal orientation；Or AlxGa1-xN layers, wherein 0≤X≤0.5；Or BN material layer.
13. the substrat structure according to claim 10 for being used for the growth of III-V group-III nitride, it is characterised in that: described more
A SiO2Protrusion is arranged in periodic intervals, and spacing is 0.5~2 μm, the SiO2The height of protrusion is 0.2~3 μm.
14. the substrat structure according to claim 10 for being used for the growth of III-V group-III nitride, it is characterised in that: the SiO2
Protrusion is SiO2Bag-like protrusion, SiO2Cone-shaped bulge or SiO2Pyramid shape protrusion.
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| CN1992359A (en) * | 2005-09-22 | 2007-07-04 | 索尼株式会社 | Light-emitting diode and method for manufacturing the same |
| US20110068347A1 (en) * | 2009-09-18 | 2011-03-24 | Palo Alto Research Center Incorporated | Nitride Semiconductor Structure and Method of Making Same |
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