CN104659151A - Method for diffusion gettering of solar battery - Google Patents
Method for diffusion gettering of solar battery Download PDFInfo
- Publication number
- CN104659151A CN104659151A CN201510065245.7A CN201510065245A CN104659151A CN 104659151 A CN104659151 A CN 104659151A CN 201510065245 A CN201510065245 A CN 201510065245A CN 104659151 A CN104659151 A CN 104659151A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- gettering
- time
- phosphorus
- sided
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 36
- 238000005247 gettering Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 35
- 239000011574 phosphorus Substances 0.000 claims abstract description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 210000002268 wool Anatomy 0.000 claims description 13
- 235000008216 herbs Nutrition 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009941 weaving Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 2
- 238000005086 pumping Methods 0.000 abstract 4
- 239000012535 impurity Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for diffusion gettering of a solar battery. The method comprises the following steps: (1) double-side heavy phosphorus diffusion gettering for the first time: inserting an original silicon chip into a double-side diffusion railboat, then sending the double-side diffusion railboat into a diffusion furnace for heavy phosphorus diffusion gettering, pumping in nitrogen at the flow rate of 2,000-6,000 ml/min and pumping in phosphorus for 10-30 min; (2) texturing: sending the silicon chip subjected to double-side heavy phosphorus diffusion into a texturing machine for suede surface making; (3) double-side normal diffusion for the second time: inserting the textured silicon chip into the double-side diffusion railboat, sending the double-side diffusion railboat into the diffusion furnace, pumping in nitrogen at the flow rate of 200-2,000 ml/min, and pumping in phosphorus for 10-30 min. The method is good in gettering effect, improves the battery efficiency, and is compatible with a traditional solar battery production line and suitable for mass production.
Description
Technical field
The present invention relates to a kind of manufacture method of solar cell, be specifically related to the method for a kind of solar cell diffusion gettering.
Background technology
The production stage of conventional solar cell generally will through key steps such as surface wool manufacturing, diffusion, dephosphorization silex glass, plasma etching, coated with antireflection film, silk screen printing, Fast Sintering and detection packing.Existing conventional silion cell generally only carries out one side One Diffusion Process, gettering weak effect, and impurity compound is many, and affect short circuit current and open circuit voltage, battery efficiency is low.
Summary of the invention
Technical problem to be solved by this invention is to provide the method for a kind of solar cell diffusion gettering, and gettering is effective, improves battery efficiency, and compatible with conventional solar cell production line, is suitable for producing in enormous quantities.
The technical scheme that technical solution problem of the present invention adopts is: a kind of method of solar cell diffusion gettering, is characterized in that: comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, concrete steps are as follows,
(1) two-sided dense phosphorus heavily spreads gettering step first time: inserted by original silicon chip among Double side diffusion quartz boat, then send diffusion furnace to and carry out dense phosphorus and heavily spread gettering, the little nitrogen flow passed into is 2000 ~ 6000ml/min, and the logical phosphorus time is 10 ~ 30 minutes;
(2) making herbs into wool step: the silicon chip after heavily being spread by two-sided dense phosphorus is sent into wool-weaving machine and made matte;
(3) the two-sided diffuse normal step of second time: inserted by the silicon chip after making herbs into wool among Double side diffusion quartz boat and send diffusion furnace to, the little nitrogen flow passed into is 200 ~ 2000ml/min, the logical phosphorus time is 10 ~ 30 minutes.
The invention has the beneficial effects as follows: by twice diffusion gettering, the impurity of inside solar energy battery is effectively caught, obtain and reduce impurity compound, can effectively promote short circuit current and open circuit voltage, battery efficiency has the lifting of about 0.3%, simultaneously with low cost, and compatible with conventional solar cell production line, be suitable for producing in enormous quantities.
Embodiment
Embodiment 1: a kind of method of solar cell diffusion gettering, comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, concrete steps are as follows,
(1) two-sided dense phosphorus heavily spreads gettering step first time: inserted by original silicon chip among Double side diffusion quartz boat, then send diffusion furnace to and carry out dense phosphorus and heavily spread gettering, the little nitrogen flow passed into is 3000ml/min, and the logical phosphorus time is 20 minutes;
(2) making herbs into wool step: the silicon chip after heavily being spread by two-sided dense phosphorus is sent into wool-weaving machine and made matte;
(3) the two-sided diffuse normal step of second time: inserted by the silicon chip after making herbs into wool among Double side diffusion quartz boat and send diffusion furnace to, the little nitrogen flow passed into is 1200ml/min, the logical phosphorus time is 20 minutes.
Embodiment 2: the method for another kind of solar cell diffusion gettering, comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, first time two-sided dense phosphorus heavily to spread the little nitrogen flow that gettering step passes into be 4000ml/min, the logical phosphorus time is 25 minutes; The little nitrogen flow that the two-sided diffuse normal step of second time passes into is 1500ml/min, and the logical phosphorus time is 25 minutes.Other is identical with embodiment 1.
Embodiment 3: the method for another solar cell diffusion gettering, comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, first time two-sided dense phosphorus heavily to spread the little nitrogen flow that gettering step passes into be 2000ml/min, the logical phosphorus time is 10 minutes; The little nitrogen flow that the two-sided diffuse normal step of second time passes into is 200ml/min, and the logical phosphorus time is 10 minutes.Other is identical with embodiment 1.
Embodiment 4: the method for another solar cell diffusion gettering, comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, first time two-sided dense phosphorus heavily to spread the little nitrogen flow that gettering step passes into be 6000ml/min, the logical phosphorus time is 30 minutes; The little nitrogen flow that the two-sided diffuse normal step of second time passes into is 2000ml/min, and the logical phosphorus time is 30 minutes.Other is identical with embodiment 1.
Claims (1)
1. a method for solar cell diffusion gettering, is characterized in that: comprise two-sided dense phosphorus for the first time and heavily spread gettering step, making herbs into wool step and the two-sided diffuse normal step of second time, concrete steps are as follows,
(1) two-sided dense phosphorus heavily spreads gettering step first time: inserted by original silicon chip among Double side diffusion quartz boat, then send diffusion furnace to and carry out dense phosphorus and heavily spread gettering, the little nitrogen flow passed into is 2000 ~ 6000ml/min, and the logical phosphorus time is 10 ~ 30 minutes;
(2) making herbs into wool step: the silicon chip after heavily being spread by two-sided dense phosphorus is sent into wool-weaving machine and made matte;
(3) the two-sided diffuse normal step of second time: inserted by the silicon chip after making herbs into wool among Double side diffusion quartz boat and send diffusion furnace to, the little nitrogen flow passed into is 200 ~ 2000ml/min, the logical phosphorus time is 10 ~ 30 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510065245.7A CN104659151A (en) | 2015-02-09 | 2015-02-09 | Method for diffusion gettering of solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510065245.7A CN104659151A (en) | 2015-02-09 | 2015-02-09 | Method for diffusion gettering of solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104659151A true CN104659151A (en) | 2015-05-27 |
Family
ID=53250058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510065245.7A Pending CN104659151A (en) | 2015-02-09 | 2015-02-09 | Method for diffusion gettering of solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104659151A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870002A (en) * | 2016-05-13 | 2016-08-17 | 江苏佑风微电子有限公司 | Impurity source diffusion method for manufacturing silicon wafer for semiconductor chip |
| CN109935645A (en) * | 2019-02-27 | 2019-06-25 | 镇江仁德新能源科技有限公司 | A kind of efficient volume production preparation method of the black silicon wafer of dry method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5627081A (en) * | 1994-11-29 | 1997-05-06 | Midwest Research Institute | Method for processing silicon solar cells |
| CN102522449A (en) * | 2011-11-24 | 2012-06-27 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method for preparing silicon solar battery |
| US8309389B1 (en) * | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| CN104300040A (en) * | 2014-08-14 | 2015-01-21 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chips |
-
2015
- 2015-02-09 CN CN201510065245.7A patent/CN104659151A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5627081A (en) * | 1994-11-29 | 1997-05-06 | Midwest Research Institute | Method for processing silicon solar cells |
| US8309389B1 (en) * | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| CN102522449A (en) * | 2011-11-24 | 2012-06-27 | 苏州阿特斯阳光电力科技有限公司 | Phosphorus diffusion method for preparing silicon solar battery |
| CN104300040A (en) * | 2014-08-14 | 2015-01-21 | 无锡尚品太阳能电力科技有限公司 | Phosphorus gettering process of silicon chips |
Non-Patent Citations (2)
| Title |
|---|
| 周良德: ""多晶硅太阳电池绒面和二次扩散吸杂工艺研究"", 《电源技术》 * |
| 杨利利等: ""物理冶金法单晶硅片双面磷吸杂实验研究"", 《科技创新导报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105870002A (en) * | 2016-05-13 | 2016-08-17 | 江苏佑风微电子有限公司 | Impurity source diffusion method for manufacturing silicon wafer for semiconductor chip |
| CN109935645A (en) * | 2019-02-27 | 2019-06-25 | 镇江仁德新能源科技有限公司 | A kind of efficient volume production preparation method of the black silicon wafer of dry method |
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| PB01 | Publication | ||
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Application publication date: 20150527 |