CN104651948B - 一种c面蓝宝石的刻蚀方法 - Google Patents
一种c面蓝宝石的刻蚀方法 Download PDFInfo
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- CN104651948B CN104651948B CN201510013477.8A CN201510013477A CN104651948B CN 104651948 B CN104651948 B CN 104651948B CN 201510013477 A CN201510013477 A CN 201510013477A CN 104651948 B CN104651948 B CN 104651948B
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- sapphires
- surface sapphires
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CN201510013477.8A CN104651948B (zh) | 2015-01-12 | 2015-01-12 | 一种c面蓝宝石的刻蚀方法 |
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CN104651948A CN104651948A (zh) | 2015-05-27 |
CN104651948B true CN104651948B (zh) | 2017-05-31 |
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Families Citing this family (2)
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CN107570876A (zh) * | 2017-10-16 | 2018-01-12 | 江南大学 | 一种激光诱导koh化学反应刻蚀和切割蓝宝石的加工方法 |
CN110257919A (zh) * | 2019-05-21 | 2019-09-20 | 南京同溧晶体材料研究院有限公司 | 一种直径均匀单晶光纤加工方法 |
Citations (2)
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CN103014875A (zh) * | 2012-11-30 | 2013-04-03 | 甘肃虹光电子有限责任公司 | 一种人造蓝宝石薄片的处理方法 |
CN104109908A (zh) * | 2014-07-23 | 2014-10-22 | 深圳市宇顺电子股份有限公司 | 蓝宝石玻璃蚀刻液及蓝宝石玻璃蚀刻方法 |
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JP2007123486A (ja) * | 2005-10-27 | 2007-05-17 | Sumitomo Metal Mining Co Ltd | サファイア基板の表面処理方法 |
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Patent Citations (2)
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CN103014875A (zh) * | 2012-11-30 | 2013-04-03 | 甘肃虹光电子有限责任公司 | 一种人造蓝宝石薄片的处理方法 |
CN104109908A (zh) * | 2014-07-23 | 2014-10-22 | 深圳市宇顺电子股份有限公司 | 蓝宝石玻璃蚀刻液及蓝宝石玻璃蚀刻方法 |
Non-Patent Citations (1)
Title |
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Characterization of low angle grain boundary in large sapphire crystal grown by the Kyropoulos method;Guojian Yu等;《Journal of Crystal Growth》;20140805;第405卷;第59-63页 * |
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Address after: 200235 No. 120, Xuhui District, Shanghai, Caobao Road Patentee after: SHANGHAI INSTITUTE OF TECHNOLOGY Address before: 200235 No. 120, Xuhui District, Shanghai, Caobao Road Patentee before: Shanghai Institute of Technology |
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Effective date of registration: 20210105 Address after: No. 3301, 3rd floor, building 3, incubation base of entrepreneurship and Innovation Industrial Park, Jinghong Industrial Park, Xishuangbanna Dai Autonomous Prefecture, Yunnan Province, 666106 Patentee after: Xishuangbanna Chengqi Technology Co.,Ltd. Address before: 200235 No. 120, Xuhui District, Shanghai, Caobao Road Patentee before: SHANGHAI INSTITUTE OF TECHNOLOGY |