CN104649672A - Low-loss temperature-stable type low-dielectric constant microwave dielectric ceramic LiZnNb5O14 - Google Patents
Low-loss temperature-stable type low-dielectric constant microwave dielectric ceramic LiZnNb5O14 Download PDFInfo
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Abstract
The invention discloses temperature-stable type low-dielectric constant microwave dielectric ceramic LiZnNb5O14 and a preparation method of LiZnNb5O14. The preparation method comprises the steps that (1) raw powder of Li2CO3, ZnO and Nb2O5 with the purity above 99.9% (weight percentage) is weighed and blended according to constitutes of LiZnNb5O14; (2) a raw material obtained in Step (1) is subjected to wet ball milling mixing for 12h with absolute ethyl alcohol as a ball milling medium, dried, and presintered in an air atmosphere at 1050 degrees for 6h; (3) an adhesive agent is added to the powder obtained in Step (2), and the powder is pelleted, subjected to compression moulding, and sintered in the air atmosphere at 1100-1150 degrees for 4h, wherein the adhesive agent adopts a polyvinyl alcohol solution with the mass concentration of 5%, and the adding amount of polyvinyl alcohol accounts for 3% of the total mass of the powder. The ceramic prepared by the method is sintered well; the dielectric constant reaches 22.4-23.3; the quality factor (QF) of the ceramic reaches 105000-149000GHz; the temperature coefficient of resonance frequency is low; and the ceramic has great application value in industry.
Description
Technical field
The present invention relates to dielectric ceramic material, particularly relate to dielectric ceramic material of the microwave devices such as ceramic substrate, resonator and the wave filter used for the manufacture of microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and to be applied in microwave frequency band (mainly UHF and SHF frequency range) circuit as dielectric material and to complete the pottery of one or more functions, the components and parts such as resonator, wave filter, dielectric substrate and medium wave circuit are widely used as in modern communication, it is the key foundation material of modern communication technology, in portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radar etc., there is very important application, in the miniaturization, integrated process of modern communication instrument, just playing increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, the requirement of following dielectric characteristics should be met: (1) seriation DIELECTRIC CONSTANT ε
rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or low dielectric loss tan δ to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency
?little of as far as possible to ensure the thermostability that device has had, general requirement-10 ppm/DEG C≤τ
?≤+10 ppm/ DEG C.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world, and prepares TiO
2microwave dielectric filter, but its temperature coefficient of resonance frequency τ
?too greatly cannot be practical.Since the seventies in last century, start the large-scale development to medium ceramic material, according to relative permittivity ε
rsize from use frequency range different, usually the microwave-medium ceramics be developed and developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al
2o
3-TiO
2, Y
2baCuO
5, MgAl
2o
4and Mg
2siO
4deng, its ε
r≤ 20, quality factor q × f>=50000GHz, τ
?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε
rwith the microwave dielectric ceramic of high q-factor, mainly BaO-MgO-Ta
2o
5, BaO-ZnO-Ta
2o
5or BaO-MgO-Nb
2o
5, BaO-ZnO-Nb
2o
5system or the composite system MWDC material between them.Its ε
r=20 ~ 35, Q=(1 ~ 2) × 10
4(under the GHz of f>=10), τ
?≈ 0.Be mainly used in the microwave communication equipments such as the direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε
rwith the microwave dielectric ceramic of Q value, mainly with BaTi
4o
9, Ba
2ti
9o
20(Zr, Sn) TiO
4deng the MWDC material for base, its ε
r=35 ~ 45, Q=(6 ~ 9) × 10
3(under f=3 ~-4GHz), τ
?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4 ~ 8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε
rand the microwave dielectric ceramic that Q value is lower, be mainly used in civilian mobile communcations system in 0.8 ~ 4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato in succession find and have studied perovskite-like tungsten bronze type BaO-Ln
2o
3-TiO
2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li
2o-Ln
2o
3-TiO
2series, lead base series material, Ca
1-xln
2x/3tiO
3be contour ε
rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system
2o
3-TiO
2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO
3specific inductivity reaches 105.
Due to three performance index (ε of microwave dielectric ceramic
rwith Qf and τ
?) between be that the relation of mutually restriction is (see document: the restricting relation between microwave dielectric ceramic materials dielectric properties, Zhu Jianhua, Liang Fei, Wang little Hong, Lv Wenzhong, electronic component and material, phase March the 3rd in 2005), meet the single-phase microwave-medium ceramics of three performance requriementss considerably less, mainly their temperature coefficient of resonance frequency is usually excessive or quality factor are on the low side and cannot application request.Current is the summary of experience drawn by great many of experiments to the research major part of microwave-medium ceramics, but complete theory is not had to set forth the relation of microtexture and dielectric properties, therefore, in theory also cannot predict its microwave dielectric property such as temperature coefficient of resonance frequency and quality factor from the composition of compound and structure, explore with exploitation near-zero resonance frequency temperature coefficient (-10 ppm/DEG C≤τ
?≤+10 ppm/ DEG C) be that those skilled in the art thirst for solving always but are difficult to the difficult problem that succeeds all the time with the serial differing dielectric constant microwave dielectric ceramic of higher figure of merit, which greatly limits the development of microwave dielectric ceramic and device.We are to composition LiCuNb
5o
14, LiNiNb
5o
14, LiMnNb
5o
14series compound carried out the research of microwave dielectric property, find that their temperature factor is all bigger than normal and cannot can Temperature Firing Microwave Dielectric Ceramics as practical.
Summary of the invention
The object of this invention is to provide one and there is good thermal stability and low-loss dielectric constant microwave dielectric ceramic material and preparation method thereof.
The chemical constitution of microwave dielectric ceramic material of the present invention is LiZnNb
5o
14.
Preparation method's step of this microwave dielectric ceramic material is:
(1) be 99.9%(weight percent by purity) more than Li
2cO
3, ZnO and Nb
2o
5starting powder press LiZnNb
5o
14composition weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is dehydrated alcohol, pre-burning 6 hours in 1050 DEG C of air atmosphere after oven dry.
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 1100 ~ 1150 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
Advantage of the present invention: LiZnNb
5o
14pottery sintering below 1150 DEG C is good, and specific inductivity reaches 22.4 ~ 23.3, especially the temperature factor τ of resonant frequency
?little, temperature stability is good; Quality factor q f value, up to 105000-149000GHz, can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of low temperature co-fired technology and microwave multilayer device, industrially have great using value.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and microwave dielectric property thereof that form different sintering temperature of the present invention.Its preparation method is described above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrate, resonator and wave filter, can meet the technology needs of the system such as mobile communication and satellite communications.
Table 1:
Claims (1)
1. a low-loss temperature-stabilized dielectric constant microwave dielectric ceramic, is characterized in that the chemical constitution of described microwave dielectric ceramic is: LiZnNb
5o
14;
Preparation method's step of described microwave dielectric ceramic is:
(1) be 99.9%(weight percent by purity) more than Li
2cO
3, ZnO and Nb
2o
5starting powder press LiZnNb
5o
14composition weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, ball-milling medium is distilled water, pre-burning 6 hours in 1050 DEG C of air atmosphere after oven dry;
(3) in the powder that step (2) is obtained, binding agent is added and after granulation, then compression moulding, finally in 1100 ~ 1150 DEG C of air atmosphere, sinter 4 hours; Described binding agent adopts mass concentration to be the polyvinyl alcohol solution of 5%, and the addition of polyvinyl alcohol accounts for 3% of powder total mass.
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524792A (en) * | 2003-02-28 | 2004-09-01 | 新加坡纳米材料科技有限公司 | Method for preparing crystalline state perovskite compounds powder |
CN101265097A (en) * | 2008-04-16 | 2008-09-17 | 清华大学 | Low-temperature sintering composite microwave medium ceramic and preparation method thereof |
CN103204680A (en) * | 2013-03-29 | 2013-07-17 | 桂林理工大学 | Niobate microwave dielectric ceramic LiMNb3O9 and preparation method thereof |
-
2015
- 2015-02-25 CN CN201510087240.4A patent/CN104649672A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524792A (en) * | 2003-02-28 | 2004-09-01 | 新加坡纳米材料科技有限公司 | Method for preparing crystalline state perovskite compounds powder |
CN101265097A (en) * | 2008-04-16 | 2008-09-17 | 清华大学 | Low-temperature sintering composite microwave medium ceramic and preparation method thereof |
CN103204680A (en) * | 2013-03-29 | 2013-07-17 | 桂林理工大学 | Niobate microwave dielectric ceramic LiMNb3O9 and preparation method thereof |
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