CN104639059B - Multimode multi-frequency power amplifier - Google Patents

Multimode multi-frequency power amplifier Download PDF

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Publication number
CN104639059B
CN104639059B CN201310560210.1A CN201310560210A CN104639059B CN 104639059 B CN104639059 B CN 104639059B CN 201310560210 A CN201310560210 A CN 201310560210A CN 104639059 B CN104639059 B CN 104639059B
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China
Prior art keywords
power amplifier
frequency
frequency power
multimode multi
chip
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CN201310560210.1A
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Chinese (zh)
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CN104639059A (en
Inventor
张科
田彤
崔剑慧
刘宏
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21103An impedance adaptation circuit being added at the input of a power amplifier stage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/20Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F2203/21Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F2203/211Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H03F2203/21139An impedance adaptation circuit being added at the output of a power amplifier stage

Abstract

The present invention provides a kind of multimode multi-frequency power amplifier.The multimode multi-frequency power amplifier comprises at least:The multi-stage power amplifier being arranged on chip;For the control unit for the power amplifier for starting corresponding series based on the first control signal;For providing the impedance matching unit of the impedance to match based on the power amplifier started;The Frequency Band Selection unit of the working frequency range for the power amplifier being activated for selection.It present invention can be suitably applied to a variety of occasions, and the multi-mode of output need not be realized using additional power supply traditionally or large-sized load modulation technique, directly realized by the way of internal control circuit and external impedance matching are combined and efficient work is kept under multiple output power modes;Enable in particular to the works fine under 600MHz and 780MHz two-bands.

Description

Multimode multi-frequency power amplifier
Technical field
The present invention relates to function amplification field, more particularly to a kind of multimode multi-frequency power amplifier.
Background technology
Internet of Things does not have a strict definition, has scholar to think, it be one by radio-frequency information sensing equipment, press The agreement of agreement, any article is connected with internet, enters row information and exchange and communicate, to realize that the intellectuality to article is known Not, a kind of network for positioning, tracking, monitor and managing.It is considered as to have huge applications in future after internet The network of prospect.And the power problemses that carry the radio node transceiver of radio transmitting information function turn into influence Internet of Things and answered One of key factor, therefore, to extend usage time and avoiding frequently changing puzzlement caused by battery, design and Implement The radio node of super low-power consumption turns into the problem of in the urgent need to address.And power amplifier is to form in radio node emitter most Important part, therefore, designing efficient power amplifier turns into the transceiver key problem for realizing low-power consumption.
In order to keep the longer service life of battery, power amplifier(PA)Allow in very extensive power output model Enclose interior holding high efficiency.However, generally power amplifier is merely able to be provided about higher efficiency in peak power output, and Efficiency can drastically decline with the reduction of power output.It is many in order to improve efficiency of the power amplifier under low power output Efficient technology is put forward to be suggested, such as power supply regulation technology, load modulation technique etc..
However, the extra power switches used in power supply adjusting method can increase die area, and power supply regulation technology Resistance can be produced between power amplifier and power supply, this can have a strong impact on the efficiency of power amplifier.Large-sized load modulation technique is equally not Suitable for the application of Internet of things node.
On the other hand, as CMOS technology is constantly progressive and ripe, device, circuit and system architecture are constantly brought forth new ideas, and use is low The CMOS of cost realizes the radio node transceiver of Internet of Things single-chip multi-standard to have met the needs of various application occasions Through being a kind of trend.Therefore, multiband power amplifier technology of many research work in wireless receiver and deploy.
The content of the invention
In view of the above the shortcomings that prior art, a variety of occasions are can apply to it is an object of the invention to provide a kind of Multimode multi-frequency power amplifier.
In order to achieve the above objects and other related objects, the present invention provides a kind of multimode multi-frequency power amplifier, and it is at least Including:
The multi-stage power amplifier being arranged on chip;
Control unit, it is connected with the multi-stage power amplifier, for starting corresponding stage based on the first control signal Several power amplifiers;
Impedance matching unit, be connected with the multi-stage power amplifier, for based on the power amplifier started come The impedance to match is provided;
Frequency Band Selection unit, the impedance matching unit is connected, for the work frequency for the power amplifier for selecting to be activated Section.
Preferably, described control unit is also provided with the chip;It is further preferable that described control unit is based on MOS Pipe is realized.
Preferably, the impedance matching unit is arranged on outside the chip;It is further preferable that the impedance matching unit base The impedance matched with the function amplifier started is provided in the second control signal.
Preferably, the Frequency Band Selection unit is arranged on outside the chip;It is further preferable that the Frequency Band Selection unit base The working frequency range of function amplifier being activated is selected in the 3rd control signal;Wherein, the working frequency range preferably includes 600MHz and 780MHz etc..
As described above, the multimode multi-frequency power amplifier of the present invention, has the advantages that:It need not use traditionally Additional power supply or large-sized load modulation technique realize the multi-mode of output, but use internal control circuit and The mode that external impedance matching is combined is realized keeps efficient work under multiple output power modes;Enable in particular to Works fine under 600MHz/780MHz two-bands.
Brief description of the drawings
Fig. 1 is shown as the multimode multi-frequency power amplifier schematic diagram of the present invention.
Fig. 2 is shown as the preferred circuit schematic diagram of the multimode multi-frequency power amplifier of the present invention.
Fig. 3 a and 3b are shown as gain, efficiency, power output and the input work of the multimode multi-frequency power amplifier of the present invention The test curve schematic diagram of rate.
Component label instructions
1 multimode multi-frequency power amplifier
11 multi-stage power amplifiers
111 modulation circuits
12 control units
13 impedance matching units
14 Frequency Band Selection units
2 chips
21 input matching networks
Embodiment
Embodiments of the present invention are illustrated by particular specific embodiment below, those skilled in the art can be by this explanation Content disclosed by book understands other advantages and effect of the present invention easily.
Refer to Fig. 1 to Fig. 3 b.It should be clear that structure, ratio, size depicted in this specification institute accompanying drawings etc., is only used To coordinate the content disclosed in specification, so that those skilled in the art understands and reads, being not limited to the present invention can The qualifications of implementation, therefore do not have technical essential meaning, the tune of the modification of any structure, the change of proportionate relationship or size It is whole, in the case where not influenceing the effect of present invention can be generated and the purpose that can reach, all should still fall in disclosed skill Art content is obtained in the range of covering.Meanwhile in this specification it is cited as " on ", " under ", "left", "right", " centre " and The term of " one " etc., understanding for narration is merely convenient to, and is not used to limit the enforceable scope of the present invention, its relativeness It is altered or modified, in the case where changing technology contents without essence, when being also considered as the enforceable category of the present invention.
As illustrated, the present invention provides a kind of multimode multi-frequency power amplifier.The multimode multi-frequency power amplifier can be applied In the radio node emitter of Internet of Things.
The multimode multi-frequency power amplifier 1 comprises at least:Multi-stage power amplifier 11, control unit 12, impedance matching Unit 13 and Frequency Band Selection unit 14.
The multi-stage power amplifier 11 is arranged on chip, and the chip is used in radio node emitter.
For example, the as shown in Fig. 2 input matching network 21, more that the chip 2 includes being used for matching the signal of access Stage power amplifier 11, and be provided with the chip 2 and meet the connection end for setting supply voltage VCC, earth terminal GND and bias voltage VB Connection end, in the present embodiment, supply voltage VCC connection end access 3.3V voltages, bias voltage VB connection end access 1.6V voltage.
Wherein, the multi-stage power amplifier 11 includes the modulation circuit 111 for being modulated access point radiofrequency signal RFin And the two stage power amplifier of the connection modulation circuit 111, the two stage power amplifier is by metal-oxide-semiconductor M1, M2, M3, M4 structure Into.
It should be noted that it should be appreciated by those skilled in the art that described above is only merely to list, rather than to the present invention Limitation, in fact, any can be by signal, the especially circuit of radiofrequency signal amplification, for example, including 3 grades or 3 grades of function above Circuit of amplifier etc., is all contained in the scope of the present invention.
Described control unit 12 is connected with the multi-stage power amplifier 11, for being started based on the first control signal The power amplifier of corresponding series.
Preferably, described control unit 12 is arranged on the chip where the multi-stage power amplifier, it is further preferable that It can be realized based on metal-oxide-semiconductor.
For example, as shown in Fig. 2 it is a kind of preferable control unit structural representation.The control unit includes multiple MOS Pipe, wherein, the signal end V1 of signal end V1 connections multi-stage power amplifier 11, signal end V2 connections multi-stage power amplifier 11 Signal end V2.As the first control signal A connection supply voltage VCC, signal end V1 output high level, signal end V2 exports low electricity One-level amplification flat, then that radiofrequency signal is passed through in two stage power amplifier;As the first control signal A connection ground level GND, then Radiofrequency signal passes through the amplification of two stage power amplifier.
Therefore in the case where exporting low-power mode, made by the first control signal A to close a part of power amplifier It does not work, and under output high-power pattern, opening all power amplifiers again by the first control signal A makes its complete Portion works.It can thus reduce under low output power mode, it is not necessary to the waste of efficiency power amplifier.
The impedance matching unit 13 is connected with the multi-stage power amplifier 11, for being put based on the power started Big device provides the impedance of matching.
As shown in Fig. 2 the impedance matching unit 13 is arranged on outside chip 2, it includes resistance, two electric capacity, wherein, it is variable Electric capacity is based on the second control signal(C1 is switched by impedance control to provide)To adjust, thus, by changing variable capacitance Capacitive reactance, the impedance of impedance matching unit 13 can be made to be matched with the amplifier being activated.
For example, when the first control signal A of control unit 12 is connected to supply voltage VCC, the base of impedance matching unit 13 Adjusted in impedance control switch C1 to high capacitance shelves, then high-power output can be achieved;If the first control signal A is adjusted to ground GND When, then impedance matching unit 13 is adjusted to low electric capacity shelves based on impedance control switch C1, then low-power output can be achieved.
The Frequency Band Selection unit 14 connects the impedance matching unit 13, the power amplifier being activated for selection Working frequency range.
As shown in Fig. 2 the Frequency Band Selection unit 13 is based on the 3rd control signal(Provided by frequency range controlling switch C2) To select the working frequency range for the power amplifier being activated.
For example, frequency range controlling switch C2 is adjusted to low electric capacity shelves, then the power amplifier being activated is operated in high frequency Section;What frequency range controlling switch C2 was adjusted to the power amplifier that to high capacitance shelves, is then activated is operated in low-frequency range.
Pass through the gain of the multimode multi-frequency power amplifier to the present invention(GAIN), power added efficiency(PAE), output work Rate(POUT)Relation between input power is tested, the test curve of acquisition as shown in figs. 3 a and 3b, wherein, Fig. 3 a are Under two-band(That is 600MHz/780MHz)Height output pattern under pass between gain, efficiency, power output and input power It is curve synoptic diagram;Fig. 3 b are under two-band(That is 600MHz/780MHz)Low output mode under gain, efficiency, output work Relation curve schematic diagram between rate and input power.
As seen from the figure, present invention power added efficiency maximum under lose-lose exit pattern(PAE)Respectively 36.6% He 46.66%, by test data it can be seen that present invention efficiency under different output modes has good performance;Moreover, The present invention is in two-band(600MHz/780MHz)Under have good efficiency and gain, the power amplifier of the invention work under two-band It is excellent to make situation.
In summary, multimode multi-frequency power amplifier of the invention controls work(in inside chip by internal control unit The quantity of rate amplifier work, then be combined with the impedance matching unit of external harmoniousness to realize the high efficiency under lose-lose exit pattern Work.Compared with the prior art, the power amplifier in the present invention does not have use extra switch and supply voltage, and small-sized; In addition, multiple-frequency operation pattern can be realized by Frequency Band Selection unit, and Frequency Band Selection oneself is selected by frequency range controlling switch, It is simple to operate.So the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as Into all equivalent modifications or change, should by the present invention claim be covered.

Claims (10)

1. a kind of multimode multi-frequency power amplifier, it is characterised in that the multimode multi-frequency power amplifier comprises at least:
Multi-stage power amplifier, it is arranged on chip, the multi-stage power amplifier includes entering access point radiofrequency signal RFin The modulation circuit of row modulation and at least two stage power amplifier;The chip also includes being used for match the signal of access Input matching network, and be provided with the chip and meet the connection end for setting supply voltage VCC, earth terminal GND and bias voltage VB Connection end;
Control unit, it is connected with the multi-stage power amplifier, for starting corresponding series based on the first control signal Power amplifier;
Impedance matching unit, it is connected with the multi-stage power amplifier, for being provided based on the power amplifier started The impedance to match;
Frequency Band Selection unit, the impedance matching unit is connected, for the working frequency range for the power amplifier for selecting to be activated.
2. multimode multi-frequency power amplifier according to claim 1, it is characterised in that:Described control unit is also disposed at institute State on chip.
3. multimode multi-frequency power amplifier according to claim 1 or 2, it is characterised in that:Described control unit is based on MOS Pipe is realized.
4. multimode multi-frequency power amplifier according to claim 1, it is characterised in that:The impedance matching unit is arranged on Outside the chip.
5. the multimode multi-frequency power amplifier according to claim 1 or 4, it is characterised in that:The impedance matching unit base The impedance matched with the function amplifier started is provided in the second control signal.
6. multimode multi-frequency power amplifier according to claim 1, it is characterised in that:The Frequency Band Selection unit is arranged on Outside the chip.
7. the multimode multi-frequency power amplifier according to claim 1 or 4, it is characterised in that:The Frequency Band Selection unit bag Include controlled capacitance.
8. the multimode multi-frequency power amplifier according to claim 1 or 4, it is characterised in that:The Frequency Band Selection unit base The working frequency range of function amplifier being activated is selected in the 3rd control signal.
9. the multimode multi-frequency power amplifier according to claim 1 or 4, it is characterised in that:The working frequency range includes 600MHz and 780MHz.
10. multimode multi-frequency power amplifier according to claim 1, it is characterised in that:The multimode multi-frequency power amplification Device is to apply the amplifier in Internet of Things.
CN201310560210.1A 2013-11-12 2013-11-12 Multimode multi-frequency power amplifier Active CN104639059B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310560210.1A CN104639059B (en) 2013-11-12 2013-11-12 Multimode multi-frequency power amplifier

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Application Number Priority Date Filing Date Title
CN201310560210.1A CN104639059B (en) 2013-11-12 2013-11-12 Multimode multi-frequency power amplifier

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CN104639059B true CN104639059B (en) 2018-03-06

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101316105A (en) * 2008-06-11 2008-12-03 苏州中科半导体集成技术研发中心有限公司 Multi-standard multi-module wireless transceiver

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090180403A1 (en) * 2008-01-11 2009-07-16 Bogdan Tudosoiu Multi-band and multi-mode radio frequency front-end module architecture
US8160275B2 (en) * 2008-04-28 2012-04-17 Samsung Electronics Co., Ltd. Apparatus and method for an integrated, multi-mode, multi-band, and multi-stage power amplifier
CN103650337B (en) * 2011-05-13 2016-09-21 天工方案公司 Apparatus and method for current offset power amplifier

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101316105A (en) * 2008-06-11 2008-12-03 苏州中科半导体集成技术研发中心有限公司 Multi-standard multi-module wireless transceiver

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