CN104639059A - Multi-mode multi-band power amplifier - Google Patents
Multi-mode multi-band power amplifier Download PDFInfo
- Publication number
- CN104639059A CN104639059A CN201310560210.1A CN201310560210A CN104639059A CN 104639059 A CN104639059 A CN 104639059A CN 201310560210 A CN201310560210 A CN 201310560210A CN 104639059 A CN104639059 A CN 104639059A
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- frequency
- frequency power
- multimode multi
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21103—An impedance adaptation circuit being added at the input of a power amplifier stage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21139—An impedance adaptation circuit being added at the output of a power amplifier stage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a multi-mode multi-band power amplifier. The multi-mode multi-band power amplifier at least comprises multiple stages of power amplifier bodies arranged on a chip, a control unit for starting the power amplifier bodies of the corresponding stages on the basis of first control signals, an impedance matching unit for providing matched impeders on the basis of the started power amplifier bodies, and a frequency band selecting unit for selecting the working frequency bands of the started power amplifier bodies. The multi-mode multi-band power amplifier is suitable for various occasions; the high-frequency work can be directly kept under multiple output power modes through the cooperation of the inner control circuit and the outer impeders without achieving multiple output modes through a traditional rated power supply or the large-size load modulation technology; particularly, the multi-mode multi-band power amplifier can well work under double frequency bands of 600 MHz and 780 MHz.
Description
Technical field
The present invention relates to function amplification field, particularly relate to a kind of multimode multi-frequency power amplifier.
Background technology
Internet of Things does not have a strict definition, scholar is had to think, it be one by radio-frequency information sensing equipment, by the agreement of agreement, any article are connected with the Internet, carry out information exchange and communicate, to realize a kind of network of Weigh sensor to article, location, tracking, monitor and managment.It is considered to be in will have the network of huge applications prospect in future after the Internet.And the power problems that carry the radio node transceiver of radio transmitting information function becomes one of key factor of ectocrine working application, therefore, for extending working time and avoiding frequently changing the puzzlement that battery brings, the radio node designing and Implementing super low-power consumption becomes problem in the urgent need to address.And power amplifier forms most important parts in radio node transmitter, therefore, designing high efficiency power amplifier becomes the transceiver key problem realizing low-power consumption.
In order to the useful life keeping battery longer, power amplifier (PA) must keep high efficiency in output power range very widely.But usual power amplifier is merely able to provide higher efficiency near peak power output, and efficiency sharply can decline along with the reduction of power output.In order to improve the efficiency of power amplifier under low power output, many technology of raising the efficiency are suggested, such as power adjustment technology, load-modulate technology etc.
But the extra power switches used in power adjustment method can increase die area, and power adjustment technology can produce resistance between power amplifier and power supply, and this can have a strong impact on the efficiency of power amplifier.Large-sized load-modulate technology is not suitable for the application of Internet of things node equally.
On the other hand, along with CMOS technology is constantly progressive and ripe, device, circuit and system configuration are constantly brought forth new ideas, and the needs meeting various application occasions with the radio node transceiver that the CMOS of low cost realizes the many standards of Internet of Things single-chip have been a kind of trend.Therefore, a lot of research work launches round the multiband power amplifier technology in wireless receiver.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of multimode multi-frequency power amplifier that can be applied to multiple occasion.
For achieving the above object and other relevant objects, the invention provides a kind of multimode multi-frequency power amplifier, it at least comprises:
Be arranged on the multi-stage power amplifier on chip;
Control unit, is connected with described multi-stage power amplifier, for starting the power amplifier of corresponding progression based on the first control signal;
Impedance matching unit, is connected with described multi-stage power amplifier, for providing the impedance matched based on started power amplifier;
Frequency Band Selection unit, connects described impedance matching unit, for selecting the working frequency range of the power amplifier be activated.
Preferably, described control unit is also arranged on the chip; More preferably, described control unit realizes based on metal-oxide-semiconductor.
Preferably, described impedance matching unit is arranged on outside described chip; More preferably, described impedance matching unit provides the impedance of mating with started function amplifier based on the second control signal.
Preferably, described Frequency Band Selection unit is arranged on outside described chip; More preferably, described Frequency Band Selection unit selects the working frequency range of the function amplifier be activated based on the 3rd control signal; Wherein, described working frequency range preferably includes 600MHz and 780MHz etc.
As mentioned above, multimode multi-frequency power amplifier of the present invention, there is following beneficial effect: do not need to use additional power supply traditionally or large-sized load-modulate technology to realize the multi-mode exported, but adopt internal control circuit and external impedance to mate the mode combined to realize keeping high efficiency work under multiple output power mode; Especially can under 600MHz/780MHz two-band works fine.
Accompanying drawing explanation
Fig. 1 is shown as multimode multi-frequency power amplifier schematic diagram of the present invention.
Fig. 2 is shown as the preferred circuit schematic diagram of multimode multi-frequency power amplifier of the present invention.
Fig. 3 a and 3b is shown as the test curve schematic diagram of the gain of multimode multi-frequency power amplifier of the present invention, efficiency, power output and input power.
Element numbers explanation
1 multimode multi-frequency power amplifier
11 multi-stage power amplifiers
111 modulation circuits
12 control units
13 impedance matching units
14 Frequency Band Selection unit
2 chips
21 input matching networks
Embodiment
By particular specific embodiment, embodiments of the present invention are described below, person skilled in the art scholar the content disclosed by this specification can understand other advantages of the present invention and effect easily.
Refer to Fig. 1 to Fig. 3 b.Notice, structure, ratio, size etc. that this specification institute accompanying drawings illustrates, content all only in order to coordinate specification to disclose, understand for person skilled in the art scholar and read, and be not used to limit the enforceable qualifications of the present invention, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the present invention can produce and the object that can reach, still all should drop on disclosed technology contents and obtain in the scope that can contain.Simultaneously, quote in this specification as " on ", D score, "left", "right", " centre " and " one " etc. term, also only for ease of understanding of describing, and be not used to limit the enforceable scope of the present invention, the change of its relativeness or adjustment, under changing technology contents without essence, when being also considered as the enforceable category of the present invention.
As shown in the figure, the invention provides a kind of multimode multi-frequency power amplifier.This multimode multi-frequency power amplifier can be applicable in the radio node transmitter of Internet of Things.
Described multimode multi-frequency power amplifier 1 at least comprises: multi-stage power amplifier 11, control unit 12, impedance matching unit 13 and Frequency Band Selection unit 14.
Described multi-stage power amplifier 11 is arranged on chip, and this chip is used in radio node transmitter.
Such as, as shown in Figure 2, this chip 2 comprises input matching network 21, multi-stage power amplifier 11 for mating the signal of access, and in this chip 2, be provided with the link meeting the link, earth terminal GND and the bias voltage VB that establish supply voltage VCC, in the present embodiment, the link access 3.3V voltage of supply voltage VCC, the link access 1.6V voltage of bias voltage VB.
Wherein, this multi-stage power amplifier 11 comprises access point radiofrequency signal RFin is carried out the modulation circuit 111 modulated and the two stage power amplifier connecting described modulation circuit 111, and this two stage power amplifier is made up of metal-oxide-semiconductor M1, M2, M3, M4.
It should be noted that, those skilled in the art should understand that, described abovely only just to list, but not limitation of the present invention, in fact, any can by signal, especially the circuit of radiofrequency signal amplification, such as, the circuit etc. of more than 3 grades or 3 grades function amplifiers is comprised, all within the scope of the present invention.
Described control unit 12 is connected with described multi-stage power amplifier 11, for starting the power amplifier of corresponding progression based on the first control signal.
Preferably, described control unit 12 is arranged on the chip at described multi-stage power amplifier place, and more preferably, it can realize based on metal-oxide-semiconductor.
Such as, as shown in Figure 2, it is a kind of preferred control unit structural representation.This control unit comprises multiple metal-oxide-semiconductor, and wherein, signal end V1 connects the signal end V2 of signal end V1, the signal end V2 connection multi-stage power amplifier 11 of multi-stage power amplifier 11.When the first control signal A connects supply voltage VCC, signal end V1 exports high level, signal end V2 output low level, then the one-level of radiofrequency signal in two stage power amplifier is amplified; When the first control signal A connects ground level GND, then radiofrequency signal is through the amplification of two stage power amplifier.
Therefore, under output low-power mode, close a part of power amplifier by the first control signal A and make it not work, under output high-power pattern, by the first control signal A all power amplifiers are opened equally and make it all work.So just can reduce under low output power mode, the waste of unnecessary efficiency power amplifier.
Described impedance matching unit 13 is connected with described multi-stage power amplifier 11, for providing the impedance of coupling based on started power amplifier.
As shown in Figure 2, this impedance matching unit 13 is arranged on outside chip 2, it comprises resistance, two electric capacity, wherein, variable capacitance regulates based on the second control signal (namely being provided by impedance Control switch C1), thus, by changing the capacitive reactance of variable capacitance, the impedance that can make impedance matching unit 13 is mated with the amplifier be activated.
Such as, when the first control signal A of control unit 12 is connected to supply voltage VCC, impedance matching unit 13 is adjusted to high capacitance shelves based on impedance Control switch C1, then can realize high-power output; If when the first control signal A is adjusted to ground GND, then impedance matching unit 13 is adjusted to low electric capacity shelves based on impedance Control switch C1, then can realizes low-power and export.
Described Frequency Band Selection unit 14 connects described impedance matching unit 13, for selecting the working frequency range of the power amplifier be activated.
As shown in Figure 2, this Frequency Band Selection unit 13 selects the working frequency range of the power amplifier be activated based on the 3rd control signal (namely being provided by frequency range control switch C2).
Such as, frequency range control switch C2 is adjusted to low electric capacity shelves, then the power amplifier be activated be operated in high band; Frequency range control switch C2 is adjusted to high capacitance shelves, then the power amplifier be activated be operated in low-frequency range.
Tested by the gain (GAIN) to multimode multi-frequency power amplifier of the present invention, power added efficiency (PAE), relation between power output (POUT) and input power, the test curve obtained as shown in figs. 3 a and 3b, wherein, Fig. 3 a is gain under the high output mode of under two-band (i.e. 600MHz/780MHz), efficiency, relation curve schematic diagram between power output and input power; Fig. 3 b is gain under the low output mode of under two-band (i.e. 600MHz/780MHz), efficiency, relation curve schematic diagram between power output and input power.
As seen from the figure, the power added efficiency (PAE) maximum under dual output pattern of the present invention is respectively 36.6% and 46.66%, can find out that the present invention's efficiency under different output modes has good performance by test data; And the present invention has good efficiency and gain under two-band (600MHz/780MHz), power amplifier of the present invention working condition under two-band is excellent.
In sum, multimode multi-frequency power amplifier of the present invention controls the quantity of inside chip intermediate power amplifier work by internal control unit, then to combine the efficiency operation realized under dual output pattern with the impedance matching unit of external harmoniousness.Compared with the prior art, the power amplifier in the present invention does not use extra switch and supply voltage, and small-sized; In addition, multiple-frequency operation pattern can be realized by Frequency Band Selection unit, and Frequency Band Selection oneself is selected by frequency range control switch, simple to operate.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a multimode multi-frequency power amplifier, is characterized in that, described multimode multi-frequency power amplifier at least comprises:
Be arranged on the multi-stage power amplifier on chip;
Control unit, is connected with described multi-stage power amplifier, for starting the power amplifier of corresponding progression based on the first control signal;
Impedance matching unit, is connected with described multi-stage power amplifier, for providing the impedance matched based on started power amplifier;
Frequency Band Selection unit, connects described impedance matching unit, for selecting the working frequency range of the power amplifier be activated.
2. multimode multi-frequency power amplifier according to claim 1, is characterized in that: described control unit is also arranged on the chip.
3. multimode multi-frequency power amplifier according to claim 1 and 2, is characterized in that: described control unit realizes based on metal-oxide-semiconductor.
4. multimode multi-frequency power amplifier according to claim 1, is characterized in that: described impedance matching unit is arranged on outside described chip.
5. the multimode multi-frequency power amplifier according to claim 1 or 4, is characterized in that: described impedance matching unit provides the impedance of mating with started function amplifier based on the second control signal.
6. multimode multi-frequency power amplifier according to claim 1, is characterized in that: described Frequency Band Selection unit is arranged on outside described chip.
7. the multimode multi-frequency power amplifier according to claim 1 or 4, is characterized in that: described Frequency Band Selection unit comprises controlled capacitance.
8. the multimode multi-frequency power amplifier according to claim 1 or 4, is characterized in that: described Frequency Band Selection unit selects the working frequency range of the function amplifier be activated based on the 3rd control signal.
9. the multimode multi-frequency power amplifier according to claim 1 or 4, is characterized in that: described working frequency range comprises 600MHz and 780MHz.
10. multimode multi-frequency power amplifier according to claim 1, is characterized in that: described multimode multi-frequency power amplifier is the amplifier being applied in Internet of Things.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310560210.1A CN104639059B (en) | 2013-11-12 | 2013-11-12 | Multimode multi-frequency power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310560210.1A CN104639059B (en) | 2013-11-12 | 2013-11-12 | Multimode multi-frequency power amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104639059A true CN104639059A (en) | 2015-05-20 |
| CN104639059B CN104639059B (en) | 2018-03-06 |
Family
ID=53217458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310560210.1A Active CN104639059B (en) | 2013-11-12 | 2013-11-12 | Multimode multi-frequency power amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104639059B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101316105A (en) * | 2008-06-11 | 2008-12-03 | 苏州中科半导体集成技术研发中心有限公司 | Multi-standard multi-module wireless transceiver |
| WO2009087438A1 (en) * | 2008-01-11 | 2009-07-16 | Sony Ericsson Mobile Communications Ab | Multi-band and multi-mode radio frequency front- end module architecture |
| US20110065472A1 (en) * | 2008-04-28 | 2011-03-17 | Samsung Electronics Co., Ltd. | Apparatus and method for an integrated multi-mode multi-band power amplifier |
| US20120286873A1 (en) * | 2011-05-13 | 2012-11-15 | Skyworks Solutions, Inc. | Apparatus and methods for biasing power amplifiers |
-
2013
- 2013-11-12 CN CN201310560210.1A patent/CN104639059B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009087438A1 (en) * | 2008-01-11 | 2009-07-16 | Sony Ericsson Mobile Communications Ab | Multi-band and multi-mode radio frequency front- end module architecture |
| US20110065472A1 (en) * | 2008-04-28 | 2011-03-17 | Samsung Electronics Co., Ltd. | Apparatus and method for an integrated multi-mode multi-band power amplifier |
| CN101316105A (en) * | 2008-06-11 | 2008-12-03 | 苏州中科半导体集成技术研发中心有限公司 | Multi-standard multi-module wireless transceiver |
| US20120286873A1 (en) * | 2011-05-13 | 2012-11-15 | Skyworks Solutions, Inc. | Apparatus and methods for biasing power amplifiers |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104639059B (en) | 2018-03-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105247782B (en) | Power amplifier circuit | |
| CN103746665A (en) | Drive power amplifier with adjustable gain of 0.1-3GHz CMOS | |
| CN103634016A (en) | Tunable impedance matching circuit | |
| CN102801389A (en) | Ultra-low power consumption low-noise amplifier | |
| CN101431316A (en) | Double-frequency band inductor multiplexing radio frequency CMOS low-noise amplifier | |
| US9882588B2 (en) | Matching network for load line change | |
| CN109067373A (en) | A kind of radio-frequency amplifier circuit | |
| CN101908881A (en) | Directional coupler and radio-frequency power amplifier containing same | |
| Li et al. | A 2.4-GHz mid-field CMOS wireless power receiver achieving 46% maximum PCE and 163-mW output power | |
| Zhao et al. | A 40–67GHz power amplifier with 13dBm PSAT and 16% PAE in 28 nm CMOS LP | |
| CN102185626A (en) | Transmission transformer-based radio frequency receiving and transmitting front-end circuit | |
| CN100559706C (en) | Radio-frequency differential-to-single-ended converter | |
| CN110708025A (en) | Power amplifier using diode compensation capacitor | |
| CN102570065B (en) | Dual-station multiplexing Balen antenna | |
| CN102122921A (en) | Radio frequency low-noise amplifier | |
| CN103178794A (en) | Single chip power amplifier | |
| CN103199802B (en) | Single-chip low-noise amplifier | |
| CN103199805A (en) | Multi-band matching network for RF power amplifiers | |
| CN101951232A (en) | Radio-frequency (RF) power amplifier | |
| CN105915189B (en) | A kind of rf power amplifier circuit | |
| CN204046526U (en) | Radio-frequency power amplifier | |
| Suvarna et al. | Transformer-based tunable matching network design techniques in 40-nm CMOS | |
| CN102882476A (en) | High-bandwidth amplifying circuit | |
| CN102118179A (en) | RF transceiver circuit system | |
| CN201985854U (en) | RF chip circuit for simplifying off-chip circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |