CN104638055A - Monocrystalline silicon solar cell manufacturing technique method - Google Patents
Monocrystalline silicon solar cell manufacturing technique method Download PDFInfo
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- CN104638055A CN104638055A CN201310562771.5A CN201310562771A CN104638055A CN 104638055 A CN104638055 A CN 104638055A CN 201310562771 A CN201310562771 A CN 201310562771A CN 104638055 A CN104638055 A CN 104638055A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 238000004140 cleaning Methods 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 14
- 239000003513 alkali Substances 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 7
- 239000010453 quartz Substances 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000003754 machining Methods 0.000 claims abstract description 4
- 238000007639 printing Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 65
- 239000010703 silicon Substances 0.000 claims description 62
- 210000004027 cell Anatomy 0.000 claims description 50
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 238000005516 engineering process Methods 0.000 claims description 20
- 210000002268 wool Anatomy 0.000 claims description 11
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000006117 anti-reflective coating Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- SXGRGWQCOHUYDS-UHFFFAOYSA-N [N].ClP(Cl)(Cl)=O Chemical compound [N].ClP(Cl)(Cl)=O SXGRGWQCOHUYDS-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910021645 metal ion Inorganic materials 0.000 claims description 3
- 125000004437 phosphorous atom Chemical group 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000003921 oil Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a monocrystalline silicon solar cell manufacturing technique method. The monocrystalline silicon solar cell manufacturing technique method is characterized by including the steps of cleaning oil stain and fingerprints on the surface of monocrystalline silicon by ultrasonic waves; performing surface texturing, namely, texturing on the surface of the monocrystalline silicon by alkali liquor, with addition of TS4 serving as a catalyst, prepared in a texturing tank; cleaning by acid liquor; spin-drying a monocrystalline silicon piece subjected to acid liquor cleaning; placing the spin-dried monocrystalline silicon piece into a quartz container of a diffusion furnace for diffusion to form PN (positive-negative) junctions; etching the PN junctions at the peripheral edge of a solar cell; performing secondary cleaning; preparing an antireflective film; printing the cell; sintering; forming a monocrystalline silicon solar cell panel after machining the sintered monocrystalline silicon piece. The monocrystalline silicon solar cell manufacturing technique method has the advantages that monocrystalline silicon solar cell manufacturing efficiency is improved, and photoelectric conversion efficiency of a monocrystalline silicon solar cell manufactured by the method is enhanced.
Description
Technical field
The present invention relates to solar cell field shaping technique, particularly relate to a kind of monocrystaline silicon solar cell method of manufacturing technology.
Background technology
In order to reduce the production cost producing solar cell, the solar cells of Ground Application etc. adopt the silicon single crystal rod of solar level, material performance index relaxes to some extent, what have also can use the material end to end of semiconductor device fabrication and useless time single crystal silicon material, through being drawn into the special silicon single crystal rod of solar cell again, silicon single crystal rod is cut into slices by monocrystaline silicon solar cell, thick about 0.3 millimeter of general sheet, silicon chip is through rubbing down, the operations such as cleaning, make raw material silicon chip to be processed, processing solar battery sheet, first to adulterate on silicon chip and spread, general alloy is the boron of trace, phosphorus, antimony etc., diffusion carries out in the high temperature dispersing furnace made at quartz ampoule, so just silicon chip forms PN junction, then silk screen print method is adopted, the silver slurry that essence prepares is imprinted on silicon chip makes grid line, through oversintering, make back electrode simultaneously, and having the face of grid line to plate antireflective coating, in case a large amount of photons is reflected away by silicon chip surface, therefore, the monomer film of monocrystaline silicon solar cell has just been made.
But because single crystal silicon material makes the less cleaning position before battery, and spread the reasons such as insufficient, make the photoelectric conversion efficiency of monocrystaline silicon solar cell not high, cause the power of solar cell not reach the phenomenon such as instructions for use and cost waste.
A kind of monocrystaline silicon solar cell method of manufacturing technology.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the invention provides a kind of monocrystaline silicon solar cell method of manufacturing technology, add the cleaning of single crystal silicon material before making battery, and change its method of diffusion in diffusion furnace, make it can form more uniform PN junction, improve the photoelectric conversion efficiency of solar cell, to change out more electric energy.
The technical solution adopted in the present invention is: a kind of monocrystaline silicon solar cell method of manufacturing technology, and described method of manufacturing technology comprises the following steps: the first step: the greasy dirt and the finger-marks that use ultrasonic cleaning monocrystalline silicon piece surface; Second step: surface wool manufacturing, carries out monocrystalline silicon sheet surface making herbs into wool by the alkali lye prepared in texturing slot, and in alkali lye, adds TS4 as catalyst, and catalyst TS4 replaces original isopropyl alcohol used to accelerate the corrosion rate of silicon, accelerates surface wool manufacturing speed; 3rd step: acid solution is cleaned, uses acid solution to enter to remove oxide layer and the metal ion of silicon chip surface; 4th step: the residual acid solution on the monocrystalline silicon piece after adopting drier to dry chemical cleaning; 5th step: the quartz container that the monocrystalline silicon piece after drying puts into diffusion furnace is spread, forms the PN junction that uniformity is good; 6th step: etch the surrounding of solar cell, to remove the PN junction of solar battery edge, avoids the light induced electron collected by the front of PN junction the region of phosphorus can be had to flow to the back side of PN junction along edge-diffusion, and causes short circuit; 7th step: the phosphorosilicate glass formed at monocrystalline silicon sheet surface when secondary cleaning removal is spread is carried out to monocrystalline silicon piece; 8th step: prepare antireflective coating, reduce light reflection during monocrystaline silicon solar cell work, with interests, it more absorbs sunlight; 9th step: printed battery, makes solar cell surface form positive pole and negative pole, and now the electric current that produces under light illumination of solar cell just can derived current by the electrical potential difference of positive pole and negative pole; Tenth step: sintering, the silicon chip after printing, can not directly use, and through sintering furnace Fast Sintering, need form the ohmic contact of upper/lower electrode; 11 step: be shaped, the monocrystalline silicon piece that sintering terminates, through machining, just can form single-crystalline-silicon solar-cell panel.
Further improvement of the present invention is: the mass volume ratio that second step system subtracts the NaOH in groove is 2%, and the volume ratio of catalyst TS4 is that 1%, TS4 catalyst is better than the isopropyl alcohol acceleration effect used before.
Further improvement of the present invention is: the acid solution of the 3rd step acid solution cleaning is the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction.
Further improvement of the present invention is: the drier described in the 4th step is the monocrystalline silicon piece after centrifugal drier dries acid solution cleaning, removes the residual liquid of silicon chip surface quickly and efficiently.
Further improvement of the present invention is: the diffuse source of the 5th step is phosphorus oxychloride, and the phosphorus atoms generated with oxygen reaction under using nitrogen phosphorus oxychloride to be brought into diffusion furnace high-temperature diffuses into the gap of silicon atom.
Further improvement of the present invention is: the antireflective coating prepared by the 8th step is silicon nitride, to improve the conversion efficiency of battery.
Further improvement of the present invention is: the print order of the 9th step battery is followed successively by back electrode, back surface field, positive electrode, and operation is: be introduced into oven for drying after each electrode or back surface field print, then carries out next operation, with printed battery.
Further improvement of the present invention is: the tenth step sintering is that the high temperature of use 900 ~ 950 degree sinters, to improve the conversion efficiency of monocrystaline silicon solar cell.
Further improvement of the present invention is: back electrode brush silver slurry, back surface field brush aluminium paste, positive electrode brush silver slurry, the monocrystaline silicon solar cell printed, from negative pole to being back surface field, back electrode, silicon chip, positive electrode just extremely successively, to ensure that the monocrystaline silicon solar cell prepared can good photoelectric conversion efficiency.
Compared with prior art, the invention has the beneficial effects as follows:
1. improve battery manufacture efficiency
Adopt TS4 to replace isopropyl alcohol to carry out monocrystalline silicon sheet surface making herbs into wool as catalyst, accelerate monocrystalline silicon sheet surface making herbs into wool efficiency; Adopt drier in making herbs into wool and diffusing procedure process, shorten the Production Time of monocrystaline silicon solar cell; Adopt the high temperature sintering of 900 ~ 950 degree to embark on journey monocrystaline silicon solar cell, shorten battery manufacturing process time, accelerate the manufacture efficiency of monocrystaline silicon solar cell;
2. add photoelectric conversion efficiency
When monocrystalline silicon piece enters diffusion furnace diffusion, adopt nitrogen to take phosphorus oxychloride source as carrier and enter reaction cavity, at high temperature with oxygen reaction, mate suitable temperature and suitable gas flow, make the high square resistance PN junction uniformity of preparation better, improve the photoelectric conversion efficiency of monocrystaline silicon solar cell.
Process of the present invention shortens the manufacturing time of monocrystaline silicon solar cell and manufactures efficiency, and adds the photoelectric conversion efficiency with monocrystaline silicon solar cell out manufactured by this method.
Accompanying drawing explanation
Fig. 1 is a kind of flow chart of monocrystaline silicon solar cell method of manufacturing technology.
Embodiment
In order to deepen the understanding of the present invention, below in conjunction with drawings and Examples, the present invention is further described, and this embodiment, only for explaining the present invention, not forming protection scope of the present invention and limiting.
A kind of monocrystaline silicon solar cell method of manufacturing technology, comprises the following steps: the first step: the greasy dirt and the finger-marks that use ultrasonic cleaning monocrystalline silicon piece surface; Second step: surface wool manufacturing, monocrystalline silicon sheet surface making herbs into wool is carried out by the alkali lye prepared in texturing slot, and in alkali lye, adding TS4 as catalyst, catalyst TS4 replaces original isopropyl alcohol complexing agent used to accelerate the corrosion rate of silicon, accelerates surface wool manufacturing speed; 3rd step: acid solution is cleaned, uses acid solution to enter to remove oxide layer and the metal ion of silicon chip surface; 4th step: liquid residual on the monocrystalline silicon piece after adopting drier to dry acid solution cleaning; 5th step: the quartz container that the monocrystalline silicon piece after drying puts into diffusion furnace is spread, forms the PN junction that uniformity is good; 6th step: etch the doped silicon of solar cell periphery, to remove the PN junction of solar battery edge, avoids the light induced electron collected by the front of PN junction the region of phosphorus can be had to flow to the back side of PN junction along edge-diffusion, and causes short circuit; 7th step: the phosphorosilicate glass formed at monocrystalline silicon sheet surface when secondary cleaning removal is spread is carried out to monocrystalline silicon piece; 8th step: prepare antireflective coating, reduce light reflection during monocrystaline silicon solar cell work, with interests, it more absorbs sunlight; 9th step: printed battery, makes solar cell surface form positive pole and negative pole, and now the electric current that produces under light illumination of solar cell just can derived current by the electrical potential difference of positive pole and negative pole; Tenth step: sintering, the silicon chip after printing, can not directly use, and through sintering furnace Fast Sintering, need form the ohmic contact of upper/lower electrode; 11 step: be shaped, the monocrystalline silicon piece that sintering terminates, through machining, just can form single-crystalline-silicon solar-cell panel.
The mass volume ratio that we's legal system subtracts the NaOH in groove is 2%, and the volume ratio of catalyst TS4 is that 1%, TS4 catalyst is better than the isopropyl alcohol acceleration effect used before, and this method TS4 catalyst used is that Changzhou Shi Chuan company produced; The acid solution of this method acid solution cleaning is the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction; Drier is the monocrystalline silicon piece after centrifugal drier dries chemical cleaning, removes chemical solution quickly and efficiently; Diffuse source is phosphorus oxychloride, and the phosphorus atoms generated with oxygen reaction under using nitrogen phosphorus oxychloride to be brought into diffusion furnace high-temperature diffuses into the gap of silicon atom; Prepared antireflective coating is silicon nitride, to improve the conversion efficiency of battery; The print order of battery is followed successively by back electrode, back surface field, positive electrode, and operation is: be introduced into oven for drying after each electrode or back surface field print, then carries out next operation, with printed battery; Sintering is that the high temperature of use 900 ~ 950 degree sinters, to improve the conversion efficiency of monocrystaline silicon solar cell; Back electrode brush silver slurry, back surface field brush aluminium paste, positive electrode brush silver slurry, the monocrystaline silicon solar cell printed, from negative pole to being back surface field, back electrode, silicon chip, positive electrode just extremely successively, to ensure that the monocrystaline silicon solar cell prepared can good photoelectric conversion efficiency.
Process of the present invention shortens the manufacturing time of monocrystaline silicon solar cell and manufactures efficiency, and adds the photoelectric conversion efficiency with monocrystaline silicon solar cell out manufactured by this method.
What embodiments of the invention were announced is preferred embodiment, but is not limited thereto, those of ordinary skill in the art; very easily according to above-described embodiment, understand spirit of the present invention, and make different amplifications and change; but only otherwise depart from spirit of the present invention, all in protection scope of the present invention.
Claims (10)
1. a monocrystaline silicon solar cell method of manufacturing technology, is characterized in that: described method of manufacturing technology comprises the following steps:
The first step: the greasy dirt and the finger-marks that use ultrasonic cleaning monocrystalline silicon piece surface;
Second step: surface wool manufacturing, carries out monocrystalline silicon sheet surface making herbs into wool by the alkali lye prepared in texturing slot, and in alkali lye, adds TS4 as catalyst, and described catalyst TS4 accelerates the corrosion rate of silicon;
3rd step: acid solution is cleaned, uses acid solution to remove oxide layer and the metal ion of silicon chip surface;
4th step: the monocrystalline silicon piece after adopting drier to dry acid solution cleaning;
5th step: the quartz container that the monocrystalline silicon piece after drying puts into diffusion furnace is spread, forms PN junction;
6th step: the silicon chip after diffusion is etched, to remove the PN junction of silicon chip edge;
7th step: the phosphorosilicate glass formed at monocrystalline silicon sheet surface when secondary cleaning removal is spread is carried out to monocrystalline silicon piece;
8th step: prepare antireflective coating;
9th step: printed battery, makes solar cell surface form positive pole and negative pole;
Tenth step: sintering, the silicon chip after printing, can not directly use, and through sintering furnace Fast Sintering, need form the ohmic contact of upper/lower electrode;
11 step: be shaped, the monocrystalline silicon piece that sintering terminates, through machining, just can form single-crystalline-silicon solar-cell panel.
2. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, is characterized in that: the mass volume ratio of the NaOH in second step texturing slot is 2%, and the volume ratio of catalyst is 1%.
3. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, is characterized in that: the acid solution of the 3rd step acid solution cleaning is the hydrofluoric acid (concentration 49%) of 16% volume fraction and hydrochloric acid (concentration 37%) each pickling 5min of 28% volume fraction.
4. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, is characterized in that: the drier described in the 4th step is centrifugal drier.
5. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, it is characterized in that: the diffuse source of the 5th step is phosphorus oxychloride, the phosphorus atoms generated with oxygen reaction under using nitrogen phosphorus oxychloride to be brought into diffusion furnace high-temperature diffuses into the gap of silicon atom.
6. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, is characterized in that: the antireflective coating prepared by the 8th step is silicon nitride.
7. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, it is characterized in that: the print order of the 9th step battery is followed successively by back electrode, back surface field, positive electrode, operation is: be introduced into oven for drying after each electrode or back surface field print, then carries out next operation.
8. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 1, is characterized in that: the tenth step sintering is that the high temperature of use 900 ~ 950 degree sinters.
9. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 7, is characterized in that: back electrode brush silver slurry, back surface field brush aluminium paste, positive electrode brush silver slurry.
10. a kind of monocrystaline silicon solar cell method of manufacturing technology according to claim 7, is characterized in that: the monocrystaline silicon solar cell printed, from negative pole to being back surface field, back electrode, silicon chip, positive electrode just extremely successively.
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| CN109873054A (en) * | 2019-04-04 | 2019-06-11 | 乐山新天源太阳能科技有限公司 | Black silicon solar cell production line |
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