CN104638052B - 制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法 - Google Patents
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- 238000004070 electrodeposition Methods 0.000 title claims abstract description 38
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- 238000000151 deposition Methods 0.000 claims abstract description 24
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Abstract
本发明属于薄膜太阳能电池领域，具体涉及制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法。本发明的技术方案为：制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。该技术方案消除CdTe和顶针接触电极之间的附着力，使得移除的顶针电极上不附有任何CdTe化合物，因此解决了现有电化学沉积法生产太阳能电池的装置和方法中太阳能电池的单位面积里参与光电转换的有效面积小，影响了太阳能电池的转换效率的问题。
Description
技术领域
本发明属于薄膜太阳能电池领域，具体涉及制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法。
背景技术
碲化镉（CdTe）薄膜太阳能电池是一种以p型CdTe和n型CdS的异质结为基础的薄膜太阳能电池。近年来，CdTe薄膜太阳能电池以其光电转化率高、生产成本低、高稳定性、吸收光谱宽、生命周期结束后可回收等优点，倍受中外关注。
CdTe 薄膜太阳能电池是在玻璃或是其它柔性衬底上依次沉积多层薄膜而构成的光伏器件。一般标准的CdTe 薄膜太阳能电池由五层结构组成，其中箭头方向为光照方向。
第一层是沉积在透明衬底上的透明导电氧化物（英文名称为Transparent andConductive Oxide，简称TCO）层，主要起透光和导电的作用；第二层是CdS窗口层，该层为n型半导体；第三层是CdTe 吸收层，为p 型半导体，该层与窗口层的n 型CdS形成p-n 结，第四层是在CdTe 吸收层上面沉积背接触（英文名称为back contact）层，该层的作用是降低CdTe 和金属电极的接触势垒，使金属电极与CdTe 形成欧姆接触；最后沉积在背接触层上的是背电极（英文名称为back electrode）层，该层为金属材料层，与TCO层通过外电路连接，用于将电流引出。具有上述结构的CdTe 薄膜太阳能电池在工作时，当有光穿射透明衬底和TCO层照射到p-n 结，且光子能量大于p型CdTe禁带宽度时，吸收层价带中的电子获得能量跃迁到导带，同时在价带中产生空穴，在p-n 结附近会产生电子-空穴对，产生的非平衡载流子由于n型半导体到p型半导体形成的内建电场作用向空间电荷区两端漂移从而产生光生电势。将p-n 结与外电路导通时，电路中会出现电流。
制备CdTe吸收层常用的方法有：气相输运法，近空间升华法，磁控溅射法和电沉积法。
电沉积时，需将待电沉积的基板放置于电解液中，将基板的透明导电层接上负极，和电解液中的正极连接，通过正负极通电即可将半导体化合物沉积到基板上。
对于碲化镉薄膜太阳能电池，随着所沉积吸收层厚度的增加，正负电极之间电场强度将随之减小，导致半导体化合物沉积速度的降低，不利于大规模生产。
增加电场强度可以加快沉积速度，然而，为了保证光透过率，透明导电层通常很薄，具有较高的阻抗，导致基板与正电极之间的电场强度随着基板上与外接电极距离的增加而减小，因此沉积后的吸收层容易形成距离外接电极近的地方膜层厚，而远离外接电极处的膜层薄的不均匀膜层，从而影响光电转换效率，这种现象在大面积基板上尤为明显。为了解决上述技术问题，美国专利文献US2011/0290641A1公开了一种快速化学电沉积法生产太阳能电池的装置和方法，包括具有很多接触顶针的支撑结构，每个所述接触顶针都与基底层表面电接触，形成多个分布式电极，给所述基底提供用于电沉积的电位(An apparatusfor electrodeposition, comprising a support structure including a pluralityof contact pins, each contact pin of said plurality of contact pins configureto establish electrical con tact with a substrate surface and thereby supplyplating potential to the substrate)。将电流通过接触顶针均匀地分布到待电沉积平板上，有效的提高待电沉积基板和电解液中正极之间电场强度的均匀性，使沉积后的吸收层厚度得于均匀分布。
待电沉积完毕、移除接触顶针后，放置接触顶针的地方就会产生接触顶针孔洞，如果不对该接触顶针孔洞进行填补，随后沉积的背电极将和透明导电极连接，使太阳能电池在使用时产生断路，因此，需要在移除接触顶针后在接触顶针孔中填充电绝缘物质。虽然此电绝缘物质不参与光电转换，但如果顶针截面积足够小，对电池的整体转换效率影响不大。
然而由于所沉积的CdTe和顶针之间具有一定的附着力，在移除顶针时，将有部分CdTe附着在顶针表面，使得接触顶针孔洞面积增大，相应的使太阳能电池单位面积内参与光电转换的有效面积减小，从而影响了光吸收转换的效率。
发明内容
本发明的目的在于，克服现有技术的不足，提供了一种制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法。该技术方案消除CdTe和顶针接触电极之间的附着力，使得移除的顶针电极上不附有任何CdTe化合物，因此解决了现有电化学沉积法生产太阳能电池的装置和方法中太阳能电池的单位面积里参与光电转换的有效面积小，影响了太阳能电池的转换效率的问题。
为解决上述技术问题，本发明的技术方案为：制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。
停止给接触电极通电的时候，接触电极离开待电沉积表面。由于所述接触电极与待电沉积表面电连接的时间可以任意控制，因此，可以在所沉积CdTe膜层相对较薄的时候，停止给接触电极通电，同时使接触电极离开待电沉积表面，随后将接触电极与待电沉积表面再次电连接并通电，进行第二次CdTe沉积，重复上述过程直到CdTe膜层达到所需要的厚度。
停止给接触电极通电的时候，旋转接触电极。由于所述接触电极可以任意旋转，因此，可以在所沉积CdTe膜层相对较薄的时候，停止给接触电极通电，同时旋转接触电极，随后将再次使接触电极与待电沉积表面通电，进行第二次CdTe沉积，重复上述过程直到CdTe膜层达到所需要的厚度。
该方法还包括以下步骤：改变电解液流动的方向。通过改变电解液的流动速度和方向，使接触电极在流动的电解液推动下作微小的运动，在所沉积CdTe膜层相对较薄的时候，这种微小的运动可以消除所沉积CdTe与针状电极之间的附着力，从而解决了接触电极带走CdTe使光电转换效率下降的问题。
在CdTe膜层较薄而与接触电极的附着力足够小时（例如CdTe膜厚为0.01-0.5um),停止沉积，同时将接触电极抬起或旋转，彻底消除CdTe膜层与接触电极的附着力，然后使接触电极再次接触TCO，或停止旋转，通电后再进行CdTe沉积，如此反复，直到CdTe达到所需的厚度（通常是0.4-4um)。
本发明的有益效果是：由于每次沉积的CdTe膜层足够薄，与针状接触电极之间的附着力足够小，因此当接触电极离开待电沉积表面，或接触电极旋转时，CdTe不会随着接触电极的离开或旋转而脱离待电沉积表面，从而消除了所沉积的CdTe与针状电极之间的附着力。另一个方法是快速不断改变电解液流动的方向，利用电解液对接触电极的压力，消除接触电极和CdTe之间的附着力。当完成CdTe沉积，移开接触电极时，接触电极将不会带走任何CdTe化合物，因此，单位面积里参与光电转换的有效面积不会减小，转换效率也就不会受到任何影响。
具体实施方式
实施例1
制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。CdTe膜每沉积0.01-0.5um厚度时，停止给接触电极通电，接触电极离开待电沉积表面至少1秒钟的时间，随后将接触电极与待电沉积表面再次电连接并通电，进行再次CdTe沉积，重复上述过程直到CdTe膜层达到所需要的厚度。
实施例2
制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。CdTe膜每沉积0.01-0.5um厚度时，停止给接触电极通电，旋转接触电极至少一圈，随后将接触电极与待电沉积表面再次电连接并通电，进行再次CdTe沉积，重复上述过程直到CdTe膜层达到所需要的厚度。
实施例3
制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。CdTe膜每沉积0.01-0.5um厚度时，停止给接触电极通电，接触电极离开待电沉积表面至少1秒钟的时间，随后将接触电极与待电沉积表面再次电连接并通电，进行再次CdTe沉积，在沉积的同时，改变电解液流动的方向，直到CdTe膜层达到所需要的厚度。
实施例4
制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，所述CdTe吸收层沉积的过程为间歇式沉积。CdTe膜每沉积0.01-0.5um厚度时，停止给接触电极通电，旋转接触电极至少一圈，随后将接触电极与待电沉积表面再次电连接并通电，进行再次CdTe沉积，在沉积的同时，改变电解液流动的方向，直到CdTe膜层达到所需要的厚度。
Claims (3)
1.制备碲化镉薄膜太阳能电池碲化镉吸收层的电化学沉积方法，其特征在于：所述CdTe 吸收层沉积的过程为间歇式沉积，停止给接触电极通电的时候，接触电极离开待电沉积表面。
2.根据权利要求1 所述的电化学沉积方法，其特征在于：停止给接触电极通电的时候，旋转接触电极。
3.根据权利要求1 所述的电化学沉积方法，其特征在于：该方法还包括以下步骤：改变电解液流动的方向。
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|---|---|---|---|---|
| EP2398045A2 (en) * | 2010-06-18 | 2011-12-21 | PrimeStar Solar, Inc | Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer |
| CN104241439A (zh) * | 2013-06-09 | 2014-12-24 | 北京恒基伟业投资发展有限公司 | 一种碲化镉薄膜太阳能电池的制备方法 |
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|---|---|---|---|---|
| WO2011133361A1 (en) * | 2010-04-21 | 2011-10-27 | EncoreSolar, Inc. | Method of fabricating solar cells with electrodeposited compound interface layers |
| CN102392282B (zh) * | 2011-11-26 | 2014-02-12 | 济南大学 | 一种在水相碱性条件下电化学制备碲化镉半导体薄膜的方法 |
-
2013
- 2013-11-06 CN CN201310543305.2A patent/CN104638052B/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2398045A2 (en) * | 2010-06-18 | 2011-12-21 | PrimeStar Solar, Inc | Modified cadmium telluride layer, a method of modifying a cadmium telluride layer, and a thin film device having a cadmium telluride layer |
| CN104241439A (zh) * | 2013-06-09 | 2014-12-24 | 北京恒基伟业投资发展有限公司 | 一种碲化镉薄膜太阳能电池的制备方法 |
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