CN104637920B - A kind of upper integrated single-ended inductor of adjustable of inductance value - Google Patents
A kind of upper integrated single-ended inductor of adjustable of inductance value Download PDFInfo
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- CN104637920B CN104637920B CN201510025533.XA CN201510025533A CN104637920B CN 104637920 B CN104637920 B CN 104637920B CN 201510025533 A CN201510025533 A CN 201510025533A CN 104637920 B CN104637920 B CN 104637920B
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- signal wire
- earth plate
- inductance value
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Abstract
The invention belongs to microelectronics technology, disclose a kind of upper integrated single-ended inductor of adjustable of inductance value, the earth plate constituted is connected by via by top-level metallic to underlying metal including two pieces, one signal wire positioned at top layer metallic layer, it is symmetrically distributed in a plurality of top-level metallic bar of signal wire both sides, the described bonding jumper for being symmetrically distributed in signal wire both sides is connected to described earth plate by multiple cmos switches, two equidistant top-level metallic bars are connected together and to a direct current weld pad by the grid of four cmos switches with the signal wire, the DC voltage being carried in by changing on the direct current weld pad changes the grid voltage of four described cmos switches, so as to change the connection status of top-level metallic bar and earth plate.The present invention changes the connection status of top-level metallic bar and earth plate, so as to change the distance of signal wire and earth plate, so as to change inductance value by said structure.
Description
Technical field
The present invention relates to integrated inductor on a kind of piece, more particularly to a kind of upper integrated single-ended inductor of adjustable of inductance value.
Background technology
Integrated inductor is widely used in matching network, voltage-controlled as the important component of RF IC on piece
The circuit such as oscillator and passive filter；Integrated inductor is not only in occupation of most of area of chip, and have a strong impact on piece
The performance of whole system.If RF IC is after flow, can by set up again the structure of integrated inductor on piece come
Inductance value is adjusted, so as to adjust, optimize circuit performance, undoubtedly splendid means.
Integrated inductor mainly has several structures on existing restructural piece：Such as employ MEMS (MEMS) technology
To design restructural inductance on piece, such inductance can realize high quality factor and high self resonant frequency, but its adjustable extent
It is very small, and extra processing is needed after flow, so as to influence it to apply；Restructural based on snail line and ferromagnetic core
Magnetic radio frequency inductive, although with high adjustable extent, but its quality factor and DC power are two prominent to be resolved greatly
Problem.
It is contemplated that overcoming the various defects of restructural single-ended inductor on piece, it can be weighed using a kind of new structure design
Structure on-chip inductor, while inductance value wide adjustable extent is realized, it is ensured that the quality factor of inductance.
The content of the invention
(1) technical problem to be solved
The present invention proposes a kind of new electric adjustable upper integrated inductor based on multilayer co-planar waveguide, by changing piece
The control voltage of upper cmos switch changes the inductance value of inductance, and it can improve the adjustable extent and quality factor of inductance value.
(2) technical scheme
Some vocabulary have been used to censure specific components among specification and claim.Those skilled in the art
, it is to be appreciated that manufacturer may call same component with different nouns.This specification is not made with the difference of title
To distinguish the scheme of component, but the criterion of differentiation is used as using the difference of component functionally.In specification in the whole text and subsequently
" comprising " and "comprising" of the claims mentioned in are an open term, therefore should be construed to " include but be not limited to ".
To realize above-mentioned purpose, the invention provides integrated inductor on a kind of piece, including：
Using the inductance based on multilayer co-planar waveguide, its signal wire, the top layer of co-planar waveguide earth plate, configurable earth plate
All on top layer metallic layer.
The earth plate of co-planar waveguide uses the side wall metal (Metal by being formed by connecting from top-level metallic to bottom metal
Side wall), the adjacent upper/lower layer metallic of earth plate is electrically connected with using via (via) structure.
Configurable earth plate is made up of the top-level metallic bar for being symmetrically distributed in signal wire both sides.
It should be appreciated that the shape of the earth plate of the configurable plane of the embodiment of the present invention can be using rectangle or zigzag etc.
Shape, the shape or pattern of inductance are not restricted to this.
Configurable earth plate is switched by on-chip CMOS and connected, and by changing the control voltage that on-chip CMOS is switched, is realized
The opening or closure of switch, so as to realize that configurable earth plate is connected to co-planar waveguide earth plate or disconnected from co-planar waveguide earth plate
Open.
Every four on-chip CMOSs switch in Fig. 1 connects and controls symmetrical relative to signal wire each connect to configurable
The bonding jumper on floor, what described every four on-chip CMOSs were switched is connected on a DC voltage weld pad (pad), passes through control
The external dc voltage of weld pad is connected to, the opening or closure of the cmos switch is controlled；The embodiment is in the both sides of signal wire
The bonding jumper of symmetrical totally eight configurable earth plates, the DC voltage weld pad described in totally four.
Preferred embodiment described above for patent of the present invention, patent of the present invention should not be limited to the embodiment and
Accompanying drawing disclosure of that, such as cmos switch and the number of configurable earth plate bonding jumper；The structure and parameter of cmos switch.
It is every without departing from the spirit and scope of the present invention, a little change and retouching of completion both falls within patent protection of the present invention
Scope, therefore protection scope of the present invention is when by being defined that claim is defined.It is not described in detail in this specification
Content belongs to prior art known to professional and technical personnel in the field.
(3) beneficial effect
The present invention provides integrated inductor on a kind of piece based on multilayer co-planar waveguide switched comprising on-chip CMOS, by changing
Become the control voltage of on-chip CMOS switch to change the inductance value of inductance, improve the adjustable extent of inductance value.
Brief description of the drawings
Fig. 1 is integrated inductor metal level schematic diagram of the embodiment of the present invention.
Fig. 2 is the top view of integrated inductor of the embodiment of the present invention comprising cmos switch.
Fig. 3 is the schematic diagram of integrated inductor of the embodiment of the present invention comprising cmos switch.
Embodiment
With the following Examples and accompanying drawing, the present invention is further illustrated, and protection content of the invention is not limited to
Following examples.Under the spirit and scope without departing substantially from inventive concept, those skilled in the art it is conceivable that change and advantage
All it is included in the present invention, and using appended claims as protection domain.
As shown in figure 1, integrated inductor on the piece of the present embodiment, from top to bottom respectively nine layers metal structure, 9 in Fig. 1
Correspondence metal level nine, 8 correspondence metal levels eight, 7 correspondence metal levels seven, 6 correspondence metal levels six, 5 correspondence metal levels five, 4 correspondence gold
Belong to layer four, 3 correspondence metal levels three, 28 correspondence metal levels two, 1 correspondence metal level one；Metal level nine is top layer metallic layer.Adjacent two
The via of layer metal level, from top to bottom has the via between h correspondence metal levels nine and the metal level eight in 8 layers of via, Fig. 1, g
Via between correspondence metal level eight and metal level seven, the via between f correspondence metal levels seven and metal level six, e correspondence metals
Via between layer six and metal level five, the via between d correspondence metal levels five and metal level four, c correspondence metal levels four and gold
Belong to the via between layer three, the via between b correspondence metal levels three and metal level two, a correspondences metal level two and metal level one it
Between via；The thickness of each metal level and via is different according to different CMOS technologies；Patent of the present invention should not be limited to
The embodiment and the number of plies of metal level shown in the drawings, each thickness metal depth, the number of plies of via and the thickness of each layer via.
As shown in Fig. 2 the 25 of the present embodiment and 35 be nine layers of co-planar waveguide earth plate, by top-level metallic to bottom metal
Connected by via between layers, 10,12,48,50 be connected in ground pad, Fig. 2 are described ground connection
Weld pad.Top-level metallic bar 13,46 is connected with 25, and top-level metallic bar 14,47 is connected with 35.
As shown in Fig. 2 the transmission line that signal wire 30 is made up of top metal, the two ends of the signal wire are coupled with two
Individual signal weld pad 11 and 49, in the left and right sides of signal wire 30 symmetrical eight top-level metallic bars 26,27,28,29,31,32,
33 and 34, this eight configurable earth plates of bonding jumper composition.
Bonding jumper 29 is equal with the distance of the distance signal line 30 of bonding jumper 31, the cmos switch 18 that bonding jumper 29 passes through two ends
Be connected with 41 with earth plate, bonding jumper 31 is connected by the cmos switch 19 and 42 at two ends with earth plate, cmos switch 18,41,
19 link together with 42 grid, and are connected to the weld pad 36 shown in Fig. 2, by changing the direct current being added on weld pad 36
Pressure, changes the on off state of cmos switch 18,41,19 and 42, so as to change the connection of bonding jumper 29, bonding jumper 31 and earth plate
State.
As shown in Fig. 2 bonding jumper 28 is equal with the distance of the distance signal line of bonding jumper 32, bonding jumper 28 passes through two ends
Cmos switch 17,40 is connected with earth plate, and bonding jumper 32 is connected by the cmos switch 20,43 at two ends with earth plate, and CMOS is opened
Close 17,40,20 to link together with 43 grid, and be connected to the weld pad 23 shown in Fig. 2, be added in by change on weld pad 23
DC voltage, changes the on off state of cmos switch 17,40,20 and 43, so as to change bonding jumper 28, bonding jumper 32 and earth plate
Connection status.
As shown in Fig. 2 bonding jumper 27 is equal with the distance of the distance signal line of bonding jumper 33, bonding jumper 27 passes through two ends
Cmos switch 16,39 is connected with earth plate, and bonding jumper 33 is connected by the cmos switch 21,44 at two ends with earth plate, and CMOS is opened
Close 16,39,21 to link together with 44 grid, and be connected to the weld pad 37 shown in Fig. 2, be added in by change on weld pad 37
DC voltage, changes the on off state of cmos switch 16,39,21 and 44, so as to change bonding jumper 27, bonding jumper 33 and earth plate
Connection status.
As shown in Fig. 2 bonding jumper 26 is equal with the distance of the distance signal line of bonding jumper 34, bonding jumper 26 passes through two ends
Cmos switch 15,38 is connected with earth plate, and bonding jumper 34 is connected by the cmos switch 22 and 45 at two ends with earth plate, and CMOS is opened
Close 15,38,22 to link together with 45 grid, and be connected to the weld pad 24 shown in Fig. 2.It is added in by changing on weld pad 24
DC voltage, changes the on off state of cmos switch 15,38,22 and 45, so as to change bonding jumper 26, bonding jumper 34 and earth plate
Connection status.
One cmos switch of symbology of the metal-oxide-semiconductor of each in Fig. 3, patent of the present invention should not be limited to the embodiment
Cmos switch structure, various cmos switch circuits should be included.Cmos switch is only made with the line between direct current weld pad in figure
For a signal, patent of the present invention should not be limited to the connected mode of the line of the embodiment, specific metal level.
Claims (4)
1. a kind of upper integrated inductor of adjustable of inductance value, it is characterised in that led to including two pieces by top-level metallic to underlying metal
Via connection composition earth plate, one be located at top layer metallic layer signal wire, be symmetrically distributed in a plurality of of signal wire both sides
Top-level metallic bar, the described bonding jumper for being symmetrically distributed in signal wire both sides is connected to described connect by multiple cmos switches
Floor, the multiple cmos switch is each respectively connected to DC voltage weld pad, and direct current pressure welding is carried in by changing
DC voltage on pad, can change the voltage being carried on the multiple cmos switch, so as to change the multiple cmos switch
On off state and change the connected state of described top-level metallic bar and earth plate.
2. the upper integrated inductor of adjustable of inductance value according to claim 1, it is characterised in that described signal wire is one
Bar is located at the transmission line of top layer metallic layer.
3. the upper integrated inductor of adjustable of inductance value according to claim 1, it is characterised in that described two pieces are by top layer
Metal connects composition earth plate by via to underlying metal and is symmetrically distributed in described signal wire both sides.
4. the upper integrated inductor of adjustable of inductance value according to claim 1, it is characterised in that described is symmetrically distributed in
The a plurality of top-level metallic bar of signal wire both sides is located between described signal wire and earth plate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510025533.XA CN104637920B (en) | 2015-01-15 | 2015-01-15 | A kind of upper integrated single-ended inductor of adjustable of inductance value |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510025533.XA CN104637920B (en) | 2015-01-15 | 2015-01-15 | A kind of upper integrated single-ended inductor of adjustable of inductance value |
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| Publication Number | Publication Date |
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| CN104637920A CN104637920A (en) | 2015-05-20 |
| CN104637920B true CN104637920B (en) | 2017-08-15 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3503132A1 (en) * | 2017-12-20 | 2019-06-26 | National Chung Shan Institute of Science and Technology | Variable inductor and integrated circuit using the variable inductor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105244345B (en) * | 2015-09-21 | 2018-04-03 | 温州大学 | A kind of upper integrated differential inductance of adjustable of inductance value |
| CN108447862B (en) * | 2018-02-27 | 2020-01-14 | 温州大学 | Reconfigurable on-chip integrated transformer and method for adjusting inductance value of signal line thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1081763A2 (en) * | 1999-08-30 | 2001-03-07 | Chartered Semiconductor Manufacturing Pte Ltd. | Method to trap air for improving the quality factor (Q) of RF inductors in CMOS technology |
| EP2523201A2 (en) * | 2010-01-06 | 2012-11-14 | Silicon Harmony Co., Ltd. | Solenoid inductor for use in a frequency synthesizer in a digital cmos process |
| CN103325765A (en) * | 2013-06-21 | 2013-09-25 | 江阴长电先进封装有限公司 | Silicon substrate inductance structure with magnetic core |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8138876B2 (en) * | 2008-01-29 | 2012-03-20 | International Business Machines Corporation | On-chip integrated voltage-controlled variable inductor, methods of making and tuning such variable inductors, and design structures integrating such variable inductors |
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2015
- 2015-01-15 CN CN201510025533.XA patent/CN104637920B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1081763A2 (en) * | 1999-08-30 | 2001-03-07 | Chartered Semiconductor Manufacturing Pte Ltd. | Method to trap air for improving the quality factor (Q) of RF inductors in CMOS technology |
| EP2523201A2 (en) * | 2010-01-06 | 2012-11-14 | Silicon Harmony Co., Ltd. | Solenoid inductor for use in a frequency synthesizer in a digital cmos process |
| CN103325765A (en) * | 2013-06-21 | 2013-09-25 | 江阴长电先进封装有限公司 | Silicon substrate inductance structure with magnetic core |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3503132A1 (en) * | 2017-12-20 | 2019-06-26 | National Chung Shan Institute of Science and Technology | Variable inductor and integrated circuit using the variable inductor |
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| CN104637920A (en) | 2015-05-20 |
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Application publication date: 20150520 Assignee: Intelligent lock Research Institute of Wenzhou University Assignor: Wenzhou University Contract record no.: X2020330000086 Denomination of invention: An on chip integrated single ended inductor with adjustable inductance Granted publication date: 20170815 License type: Common License Record date: 20201030 |