CN104637852A - Method for stripping flexible substrate - Google Patents
Method for stripping flexible substrate Download PDFInfo
- Publication number
- CN104637852A CN104637852A CN201310549945.4A CN201310549945A CN104637852A CN 104637852 A CN104637852 A CN 104637852A CN 201310549945 A CN201310549945 A CN 201310549945A CN 104637852 A CN104637852 A CN 104637852A
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- Prior art keywords
- release layer
- flexible base
- board
- stripping means
- board according
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Abstract
The invention discloses a method for stripping a flexible substrate. The method comprises the following steps: A, forming a non-crystalline release layer on a hard substrate, wherein the release layer is made of a material which can form flaky crystalline after being heated; B, forming a flexible substrate on the release layer; C, manufacturing an electronic or optical device on the flexible substrate; and D, heating the release layer to transform the release layer into a layered structure which is easy to strip, and stripping the flexible substrate from the hard substrate. According to the method for stripping a flexible substrate of the invention, the characteristic of the release layer material, namely, the material forms flaky crystalline after being heated, is utilized, the release layer is transformed into a layered structure which is easy to strip through heating after the electronic or optical device is manufactured on the flexible substrate, and thus the flexible substrate can be stripped from the hard substrate very easily and conveniently. The method of the invention does not require large equipment, and is simple in implementation and easy in operation.
Description
Technical field
The present invention relates to flexible electronic device manufacturing technology, specifically, when being a kind of manufacturing flexible electronic device, to the method that flexible base, board is peeled off.
Background technology
Flexible optoelectronic, by opto-electronic device, as display, chip, circuit, power supply, sensor are made on flexible substrate, with realize the sub-device of Traditional photovoltaic the advantage of irrealizable function, cost or Consumer's Experience.Because conventional rigid substrate can be compatible with legacy equipment, and fine pattern etc. can be formed by exactitude position, the flexible device of existing main flow, as the preparation of flexible AMOLED, need flexible base, board is first prepared or is adsorbed in hard substrate surface, again flexible base, board is peeled off from hard substrate after carrying out device preparation.Therefore, lift-off technology becomes the key that this kind of flexible device is produced.
For flexible AMOLED, the flexible optoelectronic part of current main flow adopts the mode of laser to peel off, and namely imposes high intensity laser beam at polymeric substrate and glass interface, by one deck polymer electrolyte thin layer ablation at interface, thus realizes peeling off.This mode can realize volume production, but due to the restriction of laser scanning size, be difficult to the preparation being applied to large scale flexible screen body, simultaneously because laser lift-off equipment is comparatively complicated, fewer companies is only had to have the ability to design, in order to reduce costs, need more simple and easy, more not rely on complex device stripping mode.
Also there are many research institutions and company in lift-off technology, provide different solutions, as etched completely by carrier glass at present; Or by the release layer wet etching on glass; Maybe screen body surrounding is adhered on glass, and centre does not adhere to, and is cut centre after element manufacturing completes.Chinese patent application 200910159470.9 discloses a kind of method of stripping, with the clay of band layer structure as flexible base, board, with a-Si as release layer, applies energy (preferred laser) and allows its melting, poor adhesion, thus peel off flexible base, board to a-Si.But this patent application is only applicable to special clay substrate, release layer can only be a-Si, and the scope of application is very narrow; Further, from implementation, this patent application still needs very high stripping energy, still needs the complex device as laser.
Summary of the invention
The technical problem to be solved in the present invention is to provide and a kind ofly realizes stripping means that is simple, low, the maneuverable flexible base, board of cost.
In order to solve the problems of the technologies described above, the invention provides a kind of stripping means of flexible base, board, comprising:
A, on hard substrate, form the release layer of non-crystalline, this release layer is made up of the material that can form flaky crystal after being heated;
B, on described release layer, form described flexible base, board;
C, on described flexible base, board, make electronics or optics;
D, described release layer to be heated, make described release layer change the layer structure easily peeled off into, described flexible base, board is peeled off from hard substrate.
Further, the material that can form flaky crystal after being heated described in is Transition-metal dichalcogenide.
Further, the material that can form flaky crystal after being heated described in is selected from WS
2, WSe
2, MoS
2, MoSe
2, TiS
2, TiSe
2, SnS
2, Bi
2te
3, Sb
2te
3, TaS
2, TaSe
2in one or combination in any.
Further, also comprise before described steps A:
Described hard substrate forms conductive layer;
In described steps A, described release layer is formed on this conductive layer;
In described step D, by making conductive layer generate heat to described conductive layer galvanization, utilize the heat of described conductive layer to heat described release layer.
Further, in described step D, to be irradiated by Ultraviolet radiation, laser or the mode of ultrasonic exciting heats described release layer.
Further, in described steps A, adopt sputtering method, chemical vapour deposition technique, wet chemistry method, sol-gel process or ink-jet printing process on described hard substrate, form the release layer of non-crystalline.
Further, the thickness of described release layer is 10 ~ 1000 nm.
Further, the material of described flexible base, board is selected from the one in polyimides, polystyrene, PETG, Parylene, polyether sulfone, PEN.
Further, in described step B, on described release layer, form described flexible base, board by coating-solidification method, ink-jet printing process or the tape casting.
Further, the thickness of described flexible base, board is 10 ~ 1000 μm.
The stripping means of flexible base, board of the present invention, make use of the characteristic that release layer material can form flaky crystal after being heated, after having made electronics or optics on flexible substrates, by heating release layer, make release layer change the layer structure easily peeled off into, thus can be very easy to easily flexible base, board be peeled off from hard substrate.The present invention does not need main equipment, implements simple, easy to operate.
Accompanying drawing explanation
Fig. 1 is the flow chart of the stripping means of flexible base, board of the present invention.
Fig. 2 is the schematic diagram of the stripping means of flexible base, board of the present invention.
Fig. 3 is the schematic diagram of stripping means first embodiment of flexible base, board of the present invention.
Fig. 4 is the schematic diagram of stripping means second embodiment of flexible base, board of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, can better understand the present invention and can be implemented, but illustrated embodiment is not as a limitation of the invention to make those skilled in the art.
As shown in Figure 1, the stripping means of flexible base, board of the present invention, comprising:
Step 1: the release layer forming non-crystalline on hard substrate, this release layer is made up of the material that can form flaky crystal after being heated;
Step 2: form described flexible base, board on described release layer;
Step 3: make electronics or optics on described flexible base, board;
Step 4: heat described release layer, makes described release layer change the layer structure easily peeled off into, is peeled off by described flexible base, board from hard substrate.
Wherein, formed release layer have be heated after can form sheet crystallization property material be Transition-metal dichalcogenide, can be such as WS
2, WSe
2, MoS
2, MoSe
2, TiS
2, TiSe
2, SnS
2, Bi
2te
3, Sb
2te
3, TaS
2, TaSe
2in one or combination in any.
Preferably, also comprise before step 1: on hard substrate, form conductive layer, this conductive layer is generally metal level.In step 1, release layer is formed on this conductive layer; And in step 4, by being electrified stream to conductive layer, conductive layer is generated heat, utilize the heat of conductive layer to heat described release layer.The method utilizes electric current first to be heated by conductive layer, then utilize the heat heating release layer of conductive layer, heating ten can be made even, and heating rapidly, the crystallization of release layer can be completed before heat is delivered to flexible base, board, thus can not damage flexible base, board and on optics or electronic device.
In addition, also can be heated release layer by the mode of ultraviolet or laser irradiation release layer, or adopt the mode of baking to heat release layer.The thickness of release layer is preferably 10 ~ 1000 nm, and the thickness of flexible base, board is preferably 10 ~ 1000 μm.
Particularly as shown in Figure 2, the material of hard substrate 101 is glass or the glass being coated with other retes, hard substrate 101 forms the Transition-metal dichalcogenide release layer 102 of amorphous, such as WS
2, WSe
2, MoS
2, MoSe
2, TiS
2, TiSe
2, SnS
2, Bi
2te
3, Sb
2te
3, TaS
2or TaSe
2deng one of them, it also can be the combination in any of these materials.The thickness of release layer is preferably 10-1000 nm, and formed method can for but be not limited to sputtering method, chemical vapour deposition technique (CVD), wet chemistry method, sol-gel process, ink-jet printing process etc.Then on release layer 102, flexible base, board 103 is formed, the thickness of flexible base, board is preferably 10-1000 μm, its material can be but be not limited to polyimides, polystyrene, PETG, Parylene, polyether sulfone, PEN etc., and preparation method can be but be not limited to coating-solidification method, ink-jet printing process, the tape casting etc.Prepare optics or electronic device 104 on flexible substrates again.After prepared by optics or electronic device 104, energy is applied to release layer 102, its temperature is made to exceed the phase transition temperature of its formation layer structure, like this, the release layer 102 of amorphous changes the layer structure easily peeled off into, apply external force again to peel off, make release layer 102 from Fracture, form 102-1 and 102-2 two parts.
Present invention utilizes the characteristic that release layer material can form flaky crystal after being heated, after having made electronics or optics on flexible substrates, by heating release layer, make release layer change the layer structure easily peeled off into, thus can be very easy to easily flexible base, board be peeled off from hard substrate.The present invention does not need main equipment, implements simple, easy to operate.
Embodiment as shown in Figure 3.In the present embodiment, first on glass substrate 201, form one deck conductive layer 202, the material of conductive layer can be but be not limited to Mo, Cr, Ta, Ti, ITO etc., at this preferred Mo; Preparation method can be but be not limited to sputtering method, galvanoplastic etc., is preferably sputtering method at this; Conductive layer thickness is 100-5000 nm, is preferably 1000 nm at this.Conductive layer 202 forms one deck Transition-metal dichalcogenide release layer 203, at this preferred material MoS
2, preparation method is at this preferred sputtering method, and in hydrogen sulfide steam ambient, form the release layer 203 of noncrystal membrane structure, thickness is preferably 500 nm.On release layer 203, form polyimide flex substrate 204 by the mode of coating, thickness is 500 μm.Flexible base, board 204 is formed AMOLED(active matrix organic light-emitting diode) display device 205, its formation method can adopt prior art.Next, conductive layer 202 applies alternating current, make conductive layer 202 temperature more than 300 DEG C, there is crystallization and form layer structure in the release layer 203 causing next-door neighbour, then apply external force release layer 203 is peeled off as 203-1 and 203-2, thus flexible base, board 204 and flexible displayer part 205 are separated.
The present embodiment, by applying alternating current on conductive layer, makes conductive layer generate heat, and then heats release layer, make release layer crystallization.This example only needs very low energy that release layer crystallization can be made to realize peeling off.And owing to being indirect in the present embodiment, instead of directly to release layer heating, thus it is more even that release layer can be made to be heated, and avoids, because the record of uneven generation of being heated is from not exclusively, improve conforming product rate.
Embodiment as shown in Figure 4.In the present embodiment, glass substrate 301 forms Transition-metal dichalcogenide amorphous release layer 302, at this preferred material WS
2, preferred wet chemistry method deposits, and release layer 302 thickness is preferably 300 nm.Next, adopt the mode of spin coating and ultraviolet light polymerization, on release layer 302, form flexible base, board 303.The material of flexible base, board 303 is Parylene, and thickness is 500 μm.Flexible base, board 303 is formed electrophoretic display (EPD) device 304, and its formation method can adopt prior art.Afterwards, the ultraviolet light 305 of 270 nm is irradiated from the direction of glass substrate 301, after making release layer 302 absorb ultraviolet light 305, temperature raises, thus undergo phase transition, form layer structure, then apply external force release layer 302 is peeled off as 302-1 and 302-2, thus flexible base, board 303 and electrophoretic display device, EDD 304 are separated.
The present embodiment makes release layer be heated by UV-irradiation and undergoes phase transition.By large-area ultraviolet light source, uniform irradiation can be carried out to whole glass substrate, release layer thermally equivalent can be made equally, thus ensure peeling effect, improve the qualification rate of product.
In addition, release layer also can adopt MoS
2make Deng material.And when peeling off, laser also can be used to irradiate and make MoS
2phase transformation, then peels off.Due to MoS
2phase transition temperature is lower, therefore not high to laser power requirements.Can also directly form amorphous TiS on the glass substrate
2the release layer of material, after formation flexible base, board and display device, the high-intensity ultraviolet light corresponding with the strongest absworption peak of this material is irradiated, and with ultrasonic, flexible base, board and display device is peeled off.Because Transition-metal dichalcogenide has a variety of selection, and the phase transition temperature of various material and optical absorption spectra different, therefore can provide different selections for various application.
The above embodiment is only that protection scope of the present invention is not limited thereto in order to absolutely prove the preferred embodiment that the present invention lifts.The equivalent alternative or conversion that those skilled in the art do on basis of the present invention, all within protection scope of the present invention.Protection scope of the present invention is as the criterion with claims.
Claims (10)
1. a stripping means for flexible base, board, is characterized in that, comprising:
A, on hard substrate, form the release layer of non-crystalline, this release layer is made up of the material that can form flaky crystal after being heated;
B, on described release layer, form described flexible base, board;
C, on described flexible base, board, make electronics or optics;
D, described release layer to be heated, make described release layer change the layer structure easily peeled off into, described flexible base, board is peeled off from hard substrate.
2. the stripping means of flexible base, board according to claim 1, is characterized in that, described in be heated after can form flaky crystal material be Transition-metal dichalcogenide.
3. the stripping means of flexible base, board according to claim 2, is characterized in that, described in be heated after can form flaky crystal material be selected from WS
2, WSe
2, MoS
2, MoSe
2, TiS
2, TiSe
2, SnS
2, Bi
2te
3, Sb
2te
3, TaS
2, TaSe
2in one or combination in any.
4. the stripping means of flexible base, board according to claim 1, is characterized in that, also comprises before described steps A:
Described hard substrate forms conductive layer;
In described steps A, described release layer is formed on this conductive layer;
In described step D, by making conductive layer generate heat to described conductive layer galvanization, utilize the heat of described conductive layer to heat described release layer.
5. the stripping means of flexible base, board according to claim 1, is characterized in that, in described step D, to be irradiated or the mode of ultrasonic exciting heats described release layer by Ultraviolet radiation, laser.
6. the stripping means of flexible base, board according to claim 1, it is characterized in that, in described steps A, adopt sputtering method, chemical vapour deposition technique, wet chemistry method, sol-gel process or ink-jet printing process on described hard substrate, form the release layer of non-crystalline.
7. the stripping means of flexible base, board according to claim 1, is characterized in that, the thickness of described release layer is 10 ~ 1000 nm.
8. the stripping means of flexible base, board according to claim 1, it is characterized in that, the material of described flexible base, board is selected from the one in polyimides, polystyrene, PETG, Parylene, polyether sulfone, PEN.
9. the stripping means of flexible base, board according to claim 1, is characterized in that, in described step B, forms described flexible base, board by coating-solidification method, ink-jet printing process or the tape casting on described release layer.
10. the stripping means of flexible base, board according to claim 1, is characterized in that, the thickness of described flexible base, board is 10 ~ 1000 μm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549945.4A CN104637852B (en) | 2013-11-08 | 2013-11-08 | A kind of stripping means of flexible base board |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310549945.4A CN104637852B (en) | 2013-11-08 | 2013-11-08 | A kind of stripping means of flexible base board |
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| Publication Number | Publication Date |
|---|---|
| CN104637852A true CN104637852A (en) | 2015-05-20 |
| CN104637852B CN104637852B (en) | 2018-10-19 |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304816A (en) * | 2015-11-18 | 2016-02-03 | 上海大学 | Flexible base stripping method |
| CN107832547A (en) * | 2017-11-24 | 2018-03-23 | 京东方科技集团股份有限公司 | A kind of flexible panel emulation mode and device |
| CN108107060A (en) * | 2017-11-30 | 2018-06-01 | 上海奕瑞光电子科技股份有限公司 | Flat panel detector based on fexible film encapsulation and preparation method thereof |
| CN109585269A (en) * | 2018-11-09 | 2019-04-05 | 北京大学 | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone |
| CN110072336A (en) * | 2018-01-23 | 2019-07-30 | 北京华碳科技有限责任公司 | The method for separating flexible base board and rigid conductive carrier |
| CN111534270A (en) * | 2020-05-18 | 2020-08-14 | 深圳市化讯半导体材料有限公司 | Laser stripping material and preparation method and application thereof |
| CN111554186A (en) * | 2020-04-29 | 2020-08-18 | 昆山国显光电有限公司 | Preparation method of release layer structure and display panel |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105304816A (en) * | 2015-11-18 | 2016-02-03 | 上海大学 | Flexible base stripping method |
| CN107832547A (en) * | 2017-11-24 | 2018-03-23 | 京东方科技集团股份有限公司 | A kind of flexible panel emulation mode and device |
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| CN109585269A (en) * | 2018-11-09 | 2019-04-05 | 北京大学 | A method of semiconductor monocrystal substrate is prepared using two dimensional crystal transition zone |
| CN111554186A (en) * | 2020-04-29 | 2020-08-18 | 昆山国显光电有限公司 | Preparation method of release layer structure and display panel |
| CN111534270A (en) * | 2020-05-18 | 2020-08-14 | 深圳市化讯半导体材料有限公司 | Laser stripping material and preparation method and application thereof |
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|---|---|
| CN104637852B (en) | 2018-10-19 |
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Effective date of registration: 20201215 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: NO.320 Fuchunjiang Road, Optoelectronic Industrial Park, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |