CN108107060A - Flat panel detector based on fexible film encapsulation and preparation method thereof - Google Patents
Flat panel detector based on fexible film encapsulation and preparation method thereof Download PDFInfo
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- CN108107060A CN108107060A CN201711236676.0A CN201711236676A CN108107060A CN 108107060 A CN108107060 A CN 108107060A CN 201711236676 A CN201711236676 A CN 201711236676A CN 108107060 A CN108107060 A CN 108107060A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 33
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 105
- 239000000463 material Substances 0.000 claims description 25
- 239000004642 Polyimide Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 16
- 229920000728 polyester Polymers 0.000 claims description 15
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 14
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000565 sealant Substances 0.000 claims description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000012530 fluid Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 239000011344 liquid material Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052708 sodium Inorganic materials 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 4
- 229910052716 thallium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000306 component Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- -1 Polyethylene Terephthalate Polymers 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000004078 waterproofing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Molecular Biology (AREA)
- High Energy & Nuclear Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Measurement Of Radiation (AREA)
Abstract
The present invention provides a kind of flat panel detector based on fexible film encapsulation and preparation method thereof, and preparation method includes：One supporting substrate is provided, and in forming release layer on supporting substrate；In forming barrier layer on release layer, in forming flexible base layer on barrier layer；Removal supporting substrate and release layer are removed, obtains a fexible film；The one photoreceptor array for being formed with scintillator layers is provided, fexible film is made on photoreceptor array, fexible film covers scintillator layers and barrier layer is away from the scintillator layers, obtains flat panel detector.Through the above scheme, the present invention can complete the preparation of flat panel detector by simple technique, it is at low cost, and the fexible film encapsulating structure by the sandwich formed containing barrier layer, flexible base layer and reflecting layer, flat panel detector cesium iodide encapsulation waterproof, wear-resisting property can be effectively improved, process compatible is good, and image quality is high.
Description
Technical field
The invention belongs to flat panel detector design and manufacturing technology fields, are encapsulated more particularly to one kind based on fexible film
Flat panel detector and preparation method thereof.
Background technology
X-ray art utilizes X-ray short wavelength, the property easily penetrated, the different material spy different to X-ray absorption
Point is imaged by detecting through the intensity of the X-ray of object.Flat panel detector (FPD：Flat panel detector) make
For the core component of x-ray imaging system, it is responsible for that X-ray is changed into electric signal and is recorded as picture, it can be in due course by display
Display can also be preserved and read for follow-up.
In general, FPD includes scintillation screen, pel array (photoreceptor array), control module, signal processing module and leads to
Believe module.Scintillator absorbs X-ray and is translated into visible ray；The visible light transformation that pel array generates scintillator is telecommunications
Number；Electric signal is amplified and generates digital signal by analog-to-digital conversion by signal processing module, by being imaged after correcting, compensating.In X
Ray flat panel detector industry, cesium iodide scintillation screen have low dosage, high-resolution, high picture quality, become hair in industry
The main product of exhibition.For cesium iodide scintillation screen, light photon can be converted into when receiving x-ray photon excitation, it can
See light photon and then the panel receiving that is photoelectrically converted switchs to electronics vacancy pair, so as to read generation image by peripheral circuit.
In the prior art, cesium iodide scintillation screen includes matrix, caesium iodide scintillator layer, encapsulated layer；A kind of mode is to use
Watertight transparent adhesive tape, watertight transparent adhesive tape are simple organic film, and water proofing property wear-resisting property is poor, in addition, matrix generally has carbon
Plate, optical fiber guide plate, aluminum substrate, in order to improve light extraction efficiency and water proofing property, generally use organic film and inorganic thin film it is transparent
The addition of packaged type, particularly inoranic membrane can improve water resistance, but transparent enclosure is complete using CVD and ALD sputtering equipments
Into encapsulation, there are equipment cost it is high the problems such as.
Recently, with the maturation of flexible electronic technology, Flexible Displays product starts to put goods on the market, into ordinary consumer
Daily life, frivolous bent and excellent performance so that Flexible Displays become display technology of new generation, will answer extensively
For Internet of Things, smart home, virtual reality, wearable electronic.
Therefore, how a kind of flat panel detector based on fexible film encapsulation and preparation method thereof is provided, it is existing to solve
The above problem in technology is necessary.
The content of the invention
In view of the foregoing deficiencies of prior art, it is an object of the invention to provide it is a kind of based on fexible film encapsulation
Flat panel detector and preparation method thereof, it is complicated, of high cost and anti-for solving flat panel detector packaging technology in the prior art
The problems such as water wear-resisting property is limited.
In order to achieve the above objects and other related objects, the present invention provides a kind of tablet detection based on fexible film encapsulation
The preparation method of device, includes the following steps：
1) supporting substrate is provided, and in forming release layer on the supporting substrate；
2) in forming barrier layer on the release layer, and in forming flexible base layer on the barrier layer；
3) remove and remove the supporting substrate and the release layer, remaining structure layer forms a fexible film；And
4) provide one and be formed with the photoreceptor array of scintillator layers, and the fexible film is made in the photoreceptor battle array
On row, the fexible film covers the scintillator layers and the barrier layer is away from the scintillator layers, obtains flat panel detector.
As a preferred embodiment of the present invention, step is further included in step 2)：It is anti-in being formed in the flexible base layer
Penetrate layer.
As a preferred embodiment of the present invention, in step 2), the step of forming the flexible base layer, includes：By liquid
Raw material by coat, sputter, spray and silk-screen printing in any one technique be prepared in the barrier layer surface, and pass through solid
Chemical industry skill cures the liquid material, to form the flexible base layer.
As a preferred embodiment of the present invention, the solidification temperature scope of the curing process includes 100~200 DEG C, Gu
Changing time range includes 60~120min；The scope of the light transmission rate of the flexible base layer includes 70%~100%, thickness model
It encloses including 10~200 μm.
As a preferred embodiment of the present invention, in step 3), control laser is through the supporting substrate and is irradiated to institute
The interface of release layer and the barrier layer is stated, blows the associative key of the release layer and the barrier layer interface, is gone with removing
Except the support substrate and the release layer.
As a preferred embodiment of the present invention, in step 4), using the method for hot evaporation on the photoreceptor array
Prepare the scintillator layers.
As a preferred embodiment of the present invention, the material of the scintillator layers includes cesium iodide, the scintillator layers
Thickness range includes 200~800 μm.
As a preferred embodiment of the present invention, in step 4), the fexible film is sealed in by fluid sealant described
On photoreceptor array.
As a preferred embodiment of the present invention, in step 1), the supporting substrate includes glass substrate, the release layer
Including amorphous silicon layer；In step 2), the barrier layer includes at least one of silicon oxide layer, silicon nitride layer, the flexibility base
Bottom includes at least one of polyimides (PI) film, polyvinyl alcohol (PVA) film and polyester (PET) film.
The present invention also provides it is a kind of based on fexible film encapsulation flat panel detector, including：
Photoreceptor array, for the visible light signal of reception to be converted to electric signal；
Scintillator layers are formed on the photoreceptor array, for the incident ray of reception to be converted to visible light signal
And the visible light signal is exported to the photoreceptor array；And
Fexible film is formed on the photoreceptor array and covers the scintillator layers, and the fexible film includes folded
The flexible base layer put and barrier layer, and the barrier layer is away from the scintillator layers.
As a preferred embodiment of the present invention, the fexible film further includes reflecting layer, and the reflecting layer is located at described
One side of the flexible base layer away from the barrier layer.
As a preferred embodiment of the present invention, the material in the reflecting layer includes at least one of aluminium and silver, described
The thickness range in reflecting layer includes 100~500nm.
As a preferred embodiment of the present invention, the material of the scintillator layers includes cesium iodide, the scintillator layers
Thickness range includes 200~800 μm；The material on the barrier layer includes at least one of silicon oxide layer and silicon nitride layer, institute
Stating the thickness range on barrier layer includes 100~500nm；The flexible base layer includes polyimides (PI) film, polyvinyl alcohol
(PVA) at least one of film and polyester (PET) film, the thickness range of the flexible base layer include 10~200 μm.
As a preferred embodiment of the present invention, the sensor array include amorphous silicon detector, cmos sensor with
And any one in ccd sensor.
As a preferred embodiment of the present invention, one layer is also formed between the fexible film and the sensor array
The fexible film is sealed on the photoreceptor array by sealant layer.
As described above, flat panel detector based on fexible film encapsulation of the present invention and preparation method thereof, has with following
Beneficial effect：
The preparation method of flat panel detector provided by the invention based on fexible film encapsulation, can pass through simple technique
The preparation of flat panel detector is completed, and it is at low cost, also, by the fexible film structure of the application, that is, contain flexible base layer
With the structure on barrier layer, the sandwich encapsulating structure particularly formed containing barrier layer, flexible base layer and reflecting layer can be with
Flat panel detector cesium iodide encapsulation waterproof, wear-resisting property are effectively improved, in addition, its technical process and a-Si TFT process compatibles,
Without mass upgrade, you can production flexibility a-Si sensor fit closely with object to be detected, improve the excellent of image quality
Point.
Description of the drawings
Fig. 1 is shown as flow chart prepared by the flat panel detector based on fexible film encapsulation of the present invention.
Fig. 2 is shown as providing supporting substrate in the flat panel detector preparation of the present invention and forms the structural representation of release layer
Figure.
Fig. 3 is shown as being formed the structure diagram of barrier layer and flexible base layer in the flat panel detector preparation of the present invention.
Fig. 4 is shown as being formed the structure diagram of barrier layer and flexible base layer in the flat panel detector preparation of the present invention.
Fig. 5 is shown as being formed the structure diagram in reflecting layer in the flat panel detector preparation of the present invention.
Fig. 6 is shown as divesting supporting substrate in the flat panel detector preparation of the present invention and release layer forms showing for fexible film
It is intended to.
Fig. 7 be shown as the present invention flat panel detector prepare in the formation that provides have showing for scintillator layers and sensor array
It is intended to.
Fig. 8 is shown as the X-ray flat panel detector operation principle schematic diagram of the present invention.
Component label instructions
11 supporting substrates
12 release layers
13 barrier layers
14 flexible base layers
15 reflecting layer
21 sensor arrays
22 scintillator layers
23 fluid sealants
S1~S4 steps 1)~step 4)
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
It please refers to Fig.1 to Fig. 8.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though package count when only display is with related component in the present invention rather than according to actual implementation in diagram
Mesh, shape and size are drawn, and form, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout form may also be increasingly complex.
As shown in Figure 1, the present invention provides a kind of preparation method of the flat panel detector based on fexible film encapsulation, including step
Suddenly：
1) supporting substrate is provided, and in forming release layer on the supporting substrate；
2) in forming barrier layer on the release layer, and in forming flexible base layer on the barrier layer；
3) remove and remove the supporting substrate and the release layer, remaining structure layer forms a fexible film；And
4) provide one and be formed with the photoreceptor array of scintillator layers, and the fexible film is made in the photoreceptor battle array
On row, the fexible film covers the scintillator layers and the barrier layer is away from the scintillator layers, obtains flat panel detector.
Below in conjunction with the preparation method of the attached drawing flat panel detector based on fexible film encapsulation that the present invention will be described in detail.
First, as shown in S1 and Fig. 2 in Fig. 1, step 1) is carried out, a supporting substrate 11 is provided, and in the branch support group
Release layer 12 is formed on plate 11.
As an example, the supporting substrate 11 includes glass substrate, the release layer 12 includes amorphous silicon layer.
Specifically, the supporting substrate 11 is being ultimately formed as the support construction in the flexible scintillation screen preparation
It can be stripped after flexible scintillation screen structure, the supporting substrate includes but not limited to glass substrate.In addition, the release layer 12
It is preferred that being prepared by CVD (Chemical Vapor Deposition, chemical vapor deposition) technique, the release layer is made
Peeling layer during to be subsequently formed flexible scintillation screen, material are preferably amorphous silicon material, certainly, in other embodiments, institute
The material for stating release layer can be the arbitrary material realized and removed, selected as amorphous silicon layer in the present embodiment, and the release layer exists
Heat is absorbed under the irradiation of laser, consequently facilitating the stripping with fexible film.
Then, as shown in the S2 in Fig. 1 and Fig. 3~4, carry out step 2), on the release layer 12 formed barrier layer 13,
And in formation flexible base layer 14 on the barrier layer 13.
As an example, step is further included in step 2)：In formation reflecting layer 15 in the flexible base layer 14.
As an example, the barrier layer 13 includes at least one of silicon oxide layer, silicon nitride layer, that is to say, that it can
Think any one in the two, or the laminated structural layers that the two is formed；It is sub- that the flexible base layer 14 includes polyamides
At least one of amine (PI) film, polyvinyl alcohol (PVA) film and polyester (PET) film, that is to say, that it can be above-mentioned
Any one in material, also can both or both material mixed above combination, be not specifically limited herein.
Specifically, 13 one side of barrier layer can protect the flexible base layer 14 without damage, in the present embodiment
In, laminated structural layers that selected as is made of silicon oxide layer and silicon nitride layer, wherein it is possible to be silica and the flexible substrates
Layer is in contact or silicon nitride is in contact with the flexible base layer, in addition, being additionally operable to improve the wear-resisting of fexible film
Property, thickness range includes 100~500nm, is preferably 200~400nm, selected as 300nm in this example.
As an example, in step 2), the step of forming flexible base layer 14, includes：By liquid material by coating,
Any one technique in sputtering, spraying and silk-screen printing is prepared in 13 surface of barrier layer, and passes through curing process by institute
Liquid material curing is stated, to form the flexible base layer 14.
Wherein, as an example, the scope of the light transmission rate of the flexible base layer 14 includes 70%~100%, thickness model
It encloses including 10~200 μm, the solidification temperature scope of the curing process includes 100~200 DEG C, and hardening time scope includes 60~
120min。
Specifically, the present invention prepares flexible base layer 14 on the barrier layer 13, preparation method includes：By liquid PET
(Polyethylene Terephthalate, polyethylene terephthalate), PI (Polyimide, polyimides), epoxy
Any one of resin is prepared on the barrier layer 13 by coating (as included spin coating), sputtering, spraying, silk-screen printing, adopted
With heat cure, by liquid flexible film hardening into solid flexible film, the flexible base layer 14 is obtained, it is in the present embodiment, excellent
It elects as using cladding process, is suitble to the growth of small size film, equipment is simple, at low cost.In addition, it is excellent to carry out the cured temperature
Elect 120~180 DEG C as, 150 DEG C of selected as in the present embodiment, the time is preferably 80~100min, selected as in the present embodiment
90min, the thickness for the flexible base layer 14 being prepared is preferably 50~150 μm, 100 μm of selected as in the present embodiment,
Light percent of pass is preferably 80%.
In addition, in one example, one layer of reflecting layer 15 also is prepared in the table of the flexible base layer 14, at this point, when follow-up
It removes and removes the supporting substrate and during the release layer, the fexible film includes barrier layer, flexible base layer and described
Reflecting layer, the reflecting layer 15 are used to reflect the visible ray of scintillator layers 22 (such as CsI) generation, make it into visible light sensing
Device (sensor array), shown in Figure 8, optional material includes：Aluminium, silver, but be not limited thereto, the thickness in the reflecting layer 15
Degree scope includes：100~500nm is preferably 200~400nm, selected as 300nm in this example.
Then, as shown in S3 and Fig. 5 in Fig. 1, step 3) is carried out, removes and removes the supporting substrate 11 and described release
Layer 12, remaining structure layer form a fexible film.
As an example, in step 3), control laser is through the supporting substrate 11 and is irradiated to the release layer 12 and institute
The interface on barrier layer 13 is stated, blows the associative key of the release layer 12 and 13 interface of barrier layer, to remove described in removal
Support substrate 11 and the release layer 12.
Specifically, can obtain a fexible film after the step, the fexible film can wrap in one example
Include the barrier layer 13 and the flexible base layer 14；It can include the barrier layer 13, the flexible base in another example
Bottom 14 and the reflecting layer 15, by the sandwich flexible package membrane structure in barrier layer, flexible base layer and reflecting layer,
Effectively improve flat panel detector cesium iodide encapsulation waterproof, wear-resisting property.
In addition, during removing and obtaining fexible film, using the laser of specific wavelength from the exposed of the supporting substrate
Surface be irradiated it is described alternatively, it is also possible to expose to laser so that release layer and barrier layer are broken in interface
The inside of release layer, so that the release layer is divided into two parts by the position that the release layer is irradiated to, finally by two
Divergence type layer takes out respectively, obtains having the fexible film.
Finally, as shown in the S4 in Fig. 1 and Fig. 6~7, step 4) is carried out, one is provided and is formed with the photosensitive of scintillator layers 22
Device array 21, and the fexible film is made on the photoreceptor array 21, the fexible film covers the scintillator
Layer 22 and the barrier layer 13 away from the scintillator layers 22, to obtain flat panel detector.
As an example, in step 4), method using hot evaporation on the photoreceptor array 21 in preparing the scintillator
Layer 22.In addition, the material of the scintillator layers 22 includes cesium iodide, the thickness range of the scintillator layers 22 includes 200~800
μm。
As an example, in step 4), the fexible film is sealed on the photoreceptor array 21 by fluid sealant 23.
Specifically, the incident ray that the scintillator layers 22 are used to be received is converted to visible ray, the scintillator layers
22 material includes one kind in the cesium iodide for mixing thallium and the cesium iodide for mixing sodium, selection doping thallium or sodium, can provide impurity energy
Grade improves luminescent spectrum (to long-wave band movement-yellow light, so more being matched with the response wave band of detector photoelectric tube)；It is described
The thickness of scintillator layers 15 is 200~800 μm, is preferably 400~600 μm, 500 μm of selected as in the present embodiment.
In addition, the sensor array 21 be visible light sensor, can include amorphous silicon detector, cmos sensor,
Ccd sensor etc..It is that the fexible film is bonded on the sensor array using the fluid sealant 23, it is close plays encapsulation
The effect of envelope, surrounding need to be sealed with fluid sealant, and simple for process, cost-effective, in practical applications, can be with
Periphery in the fexible film in a manner of well known within the skill of those ordinarily skilled coats fluid sealant, to enhance sealing effect,
It is not particularly limited herein.
It should be further noted that as shown in figure 8, X-ray (includes described in one example through the fexible film
Barrier layer 13, the flexible base layer 14 and the reflecting layer 15), CsI scintillator layers 16 are entered, CsI scintillators penetrate X
Line is converted to visible light beam, the visible light beam of generation and enters visible light sensor by the visible light beam that the reflecting layer is reflected
(sensor array 21) is read so as to generate corresponding charge signal.
The present invention also provides a kind of flat panel detector based on fexible film encapsulation, wherein, the flat panel detector can be with
It is prepared for preparation method using the present invention, it is of course also possible to use it is prepared by other methods, the flat panel detector bag
It includes：
Photoreceptor array 21, for the visible light signal of reception to be converted to electric signal；
Scintillator layers 22 are formed on the photoreceptor array, for the incident ray of reception to be converted to visible ray letter
Number and the visible light signal is exported to the photoreceptor array 21；And
Fexible film is formed on the photoreceptor array 21 and covers the scintillator layers 22, the fexible film bag
Stacked flexible base layer 14 and barrier layer 13 are included, and the barrier layer 13 is away from the scintillator layers 21.
As an example, the fexible film further includes reflecting layer 15, the reflecting layer 15 is located at the flexible base layer 14
One side away from the barrier layer 13, i.e., when there are during the reflecting layer, the reflecting layer is directly adjacent to the scintillator layers.
As an example, the material in the reflecting layer 15 includes at least one of aluminium, silver, the thickness model in the reflecting layer 15
It encloses including 100~500nm.
As an example, the material of the scintillator layers 22 includes cesium iodide, the thickness range of the scintillator layers 22 includes
200~800 μm；The material on the barrier layer 13 includes at least one of silicon oxide layer, silicon nitride layer, the barrier layer 13
Thickness range includes 100~500nm；The flexible base layer 14 includes polyimides (PI) film, polyvinyl alcohol (PVA) film
And at least one of polyester (PET) film, the thickness range of the flexible base layer 14 include 10~200 μm.
Specifically, the barrier layer 13 includes silicon oxide layer, at least one of silicon nitride layer, that is to say, that it can be with
For any one in the two, or the laminated structural layers that the two is formed；The flexible base layer 14 includes polyimides
(PI) at least one of film, polyvinyl alcohol (PVA) film and polyester (PET) film, that is to say, that it can be above-mentioned material
Any one in material, also can both or both material mixed above combination, be not specifically limited herein.
Wherein, 13 one side of barrier layer can protect the flexible base layer 14 without damage, in the present embodiment,
The laminated structural layers that selected as is made of silicon oxide layer and silicon nitride layer, wherein it is possible to be silica and the flexible base layer
It is in contact or silicon nitride is in contact with the flexible base layer, in addition, it is additionally operable to improve the wearability of fexible film,
Its thickness range includes 100~500nm, is preferably 200~400nm, selected as 300nm in this example.
Specifically, the thickness of the flexible base layer 14 is preferably 50~150 μm, 100 μm of selected as, light in the present embodiment
The scope of transmitance includes 70%~100%, is preferably 80%.In one example, also in the table system of the flexible base layer 14
Standby one layer of reflecting layer 15, the reflecting layer 15 are directly adjacent to the scintillator layers 22, for reflecting scintillator layers 22 (such as CsI) production
Raw visible ray makes it into visible light sensor (sensor array), and shown in Figure 8, optional material includes：Aluminium, silver,
But it is not limited thereto, the thickness range in the reflecting layer 15 includes：100~500nm, preferably 200~400nm, this example
Middle selected as 300nm.
As an example, the sensor array 21 is included in amorphous silicon detector, cmos sensor and ccd sensor
Any one.
As an example, one layer of sealant layer 23 is also formed between the fexible film and the sensor array 21, with
The fexible film is sealed on the photoreceptor array.
Specifically, the incident ray that the scintillator layers 22 are used to be received is converted to visible ray, the scintillator layers
22 material includes one kind in the cesium iodide for mixing thallium and the cesium iodide for mixing sodium, selection doping thallium or sodium, can provide impurity energy
Grade improves luminescent spectrum (to long-wave band movement-yellow light, so more being matched with the response wave band of detector photoelectric tube)；It is described
The thickness of scintillator layers 15 is 200~800 μm, is preferably 400~600 μm, 500 μm of selected as in the present embodiment.
In addition, the fexible film in one example can include the barrier layer 13, the flexible base layer 14 and
The reflecting layer 15 by the sandwich flexible package membrane structure in barrier layer, flexible base layer and reflecting layer, effectively improves
Flat panel detector cesium iodide encapsulation waterproof, wear-resisting property.Wherein, it is to be bonded in the fexible film using the fluid sealant 23
On the sensor array, playing the role of potting, surrounding needs to be sealed with fluid sealant, and simple for process,
It is cost-effective, it in practical applications, can also be in a manner of well known within the skill of those ordinarily skilled in the outer of the fexible film
Cladding fluid sealant is enclosed, to enhance sealing effect, is not particularly limited herein.
It should be further noted that as shown in figure 8, X-ray (includes described in one example through the fexible film
Barrier layer 13, the flexible base layer 14 and the reflecting layer 15), CsI scintillator layers 16 are entered, CsI scintillators penetrate X
Line is converted to visible light beam, the visible light beam of generation and enters visible light sensor by the visible light beam that the reflecting layer is reflected
(sensor array 21) is read so as to generate corresponding charge signal.
In conclusion the present invention provides a kind of flat panel detector based on fexible film encapsulation and preparation method thereof, prepare
Method includes the following steps：One supporting substrate is provided, and in forming release layer on the supporting substrate；In shape on the release layer
Into barrier layer, and in forming flexible base layer on the barrier layer；It removes and removes the supporting substrate and the release layer, obtain
One fexible film；It provides one and is formed with the photoreceptor array of scintillator layers, and the fexible film is made in the photoreceptor
On array, the fexible film covers the scintillator layers and the barrier layer is away from the scintillator layers, to obtain tablet spy
Survey device.Through the above technical solutions, the preparation method of the flat panel detector provided by the invention based on fexible film encapsulation, it can be with
The preparation of flat panel detector is completed by simple technique, it is and at low cost, also, by the fexible film structure of the application, i.e.,
Structure containing flexible base layer and barrier layer, the Sanming City particularly formed containing barrier layer, flexible base layer and reflecting layer
Encapsulating structure is controlled, flat panel detector cesium iodide encapsulation waterproof, wear-resisting property can be effectively improved, in addition, its technical process and a-
Si TFT process compatibles, without mass upgrade, you can production flexibility a-Si sensor are fitted closely with object to be detected, carried
The advantages of high imaging quality.So the present invention effectively overcomes various shortcoming of the prior art and has high industrial exploitation value
Value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (15)
1. a kind of preparation method of the flat panel detector based on fexible film encapsulation, which is characterized in that include the following steps：
1) supporting substrate is provided, and in forming release layer on the supporting substrate；
2) in forming barrier layer on the release layer, and in forming flexible base layer on the barrier layer；
3) remove and remove the supporting substrate and the release layer, remaining structure layer forms a fexible film；And
4) provide one and be formed with the photoreceptor array of scintillator layers, and the fexible film is made in the photoreceptor array
On, the fexible film covers the scintillator layers and the barrier layer is away from the scintillator layers, obtains flat panel detector.
2. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 2) in further include step：In forming reflecting layer in the flexible base layer.
3. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 2) in, the step of forming the flexible base layer, includes：By liquid material by coat, sputter, spray and silk-screen printing in
Any one technique be prepared in the barrier layer surface, and pass through curing process and cure the liquid material, to be formed
State flexible base layer.
4. the preparation method of the flat panel detector according to claim 3 based on fexible film encapsulation, which is characterized in that institute
Stating the solidification temperature scope of curing process includes 100~200 DEG C, and hardening time scope includes 60~120min；The flexibility base
The scope of the light transmission rate of bottom includes 70%~100%, and thickness range includes 10~200 μm.
5. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 3) in, control laser through the supporting substrate and the interface of the release layer and the barrier layer is irradiated to, blow described in
Release layer and the associative key of the barrier layer interface remove the support substrate and the release layer to remove.
6. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 4) in, method using hot evaporation on the photoreceptor array in preparing the scintillator layers.
7. the preparation method of the flat panel detector according to claim 6 based on fexible film encapsulation, which is characterized in that institute
Stating the material of scintillator layers includes cesium iodide, and the thickness range of the scintillator layers includes 200~800 μm.
8. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 4) in, the fexible film is sealed on the photoreceptor array by fluid sealant.
9. the preparation method of the flat panel detector according to claim 1 based on fexible film encapsulation, which is characterized in that step
It is rapid 1) in, the supporting substrate include glass substrate, the release layer include amorphous silicon layer；In step 2), the barrier layer bag
At least one of silicon oxide layer, silicon nitride layer are included, the flexible base layer includes polyimides (PI) film, polyvinyl alcohol
(PVA) at least one of film and polyester (PET) film.
10. a kind of flat panel detector based on fexible film encapsulation, which is characterized in that including：
Photoreceptor array, for the visible light signal of reception to be converted to electric signal；
Scintillator layers are formed on the photoreceptor array, for the incident ray of reception to be converted to visible light signal and is incited somebody to action
The visible light signal is exported to the photoreceptor array；And
Fexible film is formed on the photoreceptor array and covers the scintillator layers, and the fexible film includes stacked
Flexible base layer and barrier layer, and the barrier layer is away from the scintillator layers.
11. the flat panel detector according to claim 10 based on fexible film encapsulation, which is characterized in that the flexible thin
Film further includes reflecting layer, and the reflecting layer is located at one side of the flexible base layer away from the barrier layer.
12. the flat panel detector according to claim 11 based on fexible film encapsulation, which is characterized in that the reflecting layer
Material include at least one of aluminium and silver, the thickness range in the reflecting layer includes 100~500nm.
13. the flat panel detector according to claim 10 based on fexible film encapsulation, which is characterized in that the scintillator
The material of layer includes cesium iodide, and the thickness range of the scintillator layers includes 200~800 μm；The material on the barrier layer includes
At least one of silicon oxide layer and silicon nitride layer, the thickness range on the barrier layer include 100~500nm；The flexibility base
Bottom includes at least one of polyimides (PI) film, polyvinyl alcohol (PVA) film and polyester (PET) film, described soft
Property basal layer thickness range include 10~200 μm.
14. the flat panel detector according to claim 10 based on fexible film encapsulation, which is characterized in that the sensor
Array includes any one in amorphous silicon detector, cmos sensor and ccd sensor.
15. the flat panel detector based on fexible film encapsulation according to any one in claim 10~14, feature
It is, one layer of sealant layer is also formed between the fexible film and the sensor array, the fexible film is close
It is encapsulated on the photoreceptor array.
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