CN104637833A - Crystal grain selection method and bad crystal map generation method - Google Patents
Crystal grain selection method and bad crystal map generation method Download PDFInfo
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- CN104637833A CN104637833A CN201410486306.2A CN201410486306A CN104637833A CN 104637833 A CN104637833 A CN 104637833A CN 201410486306 A CN201410486306 A CN 201410486306A CN 104637833 A CN104637833 A CN 104637833A
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- 239000013078 crystal Substances 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title abstract description 6
- 238000010187 selection method Methods 0.000 title abstract 2
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 230000006378 damage Effects 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000009434 installation Methods 0.000 claims description 3
- 238000007689 inspection Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 13
- 238000011179 visual inspection Methods 0.000 description 11
- 239000000126 substance Substances 0.000 description 6
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sorting Of Articles (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The invention provides a crystal grain selection method and a bad crystal map generation method. The method for selecting the crystal grains comprises the following steps: point measuring a plurality of crystal grains to measure the photoelectric characteristics of the crystal grains; transferring the crystal grains with similar photoelectric characteristics to a sorting carrier; observing the dies on the sorting carrier by an automated optical inspection device to produce observations, wherein the observations include locations of the dies on the sorting carrier and whether the dies are damaged; drawing a bad crystal map according to the observation result, wherein the bad crystal map is provided with at least one bad crystal mark to mark the position of a damaged person in the crystal grains; and picking out the damaged one of the crystal grains according to the bad crystal marks of the bad crystal map.
Description
Technical field
The invention relates to a kind of crystal grain system of selection, and relate to the crystal grain system of selection of a kind of light-emitting diode (Light Emitting Diode is called for short LED) crystal grain and bad brilliant map production method especially.
Background technology
The common process being applied to LED grain at present comprises the following steps: that some survey (probing), an automation optical detection (Automated Optical Inspection is called for short AOI), sorting (sorting), Manual Visual Inspection and bad crystalline substance are chosen and removes.
Point survey refers to be tested the photoelectric characteristic of LED grain.Automation optical detection observes the outward appearance of crystal grain whether have damage by automation optical detector.Sorting is that good crystal grain (crystal grain that namely cosmetic injury degree is lower) is transferred to sorting carrier (sort page) according to optical characteristics by the result obtained according to a survey and automation optical detection, and it is such as the sticking blue film of tool.Manual Visual Inspection is then observe the outward appearance of all crystal grains on sorting carrier whether have damage seriatim by artificial and microscope.Bad crystalline substance is chosen except being then manually choose crystal grain apart from damage according to the artificial judgement of Manual Visual Inspection.
It should be noted that in any process before Manual Visual Inspection, the outward appearance of crystal grain all may be subject to the damage of degree varies.Therefore, in the step of Manual Visual Inspection, judge to judge that this crystal grain has damage according to artificial.But when whether crystal grain has damage to rely on completely artificially to judge, whether crystal grain damages and has been difficult to unified standard.Also therefore, Manual Visual Inspection seriously has influence on the homogeneity that crystal grain is selected.
Summary of the invention
The invention provides a kind of crystal grain system of selection and bad brilliant map production method.
The invention provides a kind of crystal grain system of selection, to eliminate the uncertainty artificially judging to judge for grain appearance degree of injury.
The invention provides a kind of bad brilliant map production method, using as the reference of choosing except bad brilliant (namely having the crystal grain of damage).
Crystal grain system of selection of the present invention comprises the following steps.Point surveys multiple crystal grain, to measure the photoelectric characteristic of these crystal grain.These crystal grain with close photoelectric characteristic are transferred to sorting carrier.By these crystal grain that automation optical detection apparatus is observed on sorting carrier, to produce observed result, wherein observed result comprises the position of these crystal grain on sorting carrier and whether these crystal grain has damage.Describe bad brilliant map according to observed result, wherein bad brilliant map has at least one bad brilliant mark, is indicated the position damaging the wounded in these crystal grain by display unit with image format.Bad brilliant mark according to bad brilliant map is chosen and is damaged the wounded except in these crystal grain.
The brilliant map production method of evil idea of the present invention comprises the following steps.By multiple crystal grain that automation optical detection apparatus is observed on sorting carrier, to produce observed result, wherein observed result comprises the position of these crystal grain and whether these crystal grain damages.Describe bad brilliant map according to observed result, wherein bad brilliant map has at least one bad brilliant mark, is indicated the position damaging the wounded in these crystal grain by display unit with image format.
Based on above-mentioned, in the present invention, after the step of machine vision being moved to the step of sorting, to replace existing Manual Visual Inspection step, therefore the uncertainty artificially judged for crystal grain damaging judge can be eliminated, thus improve the consistency of crystal grain damaging judge, save the time cost of Manual Visual Inspection simultaneously.In addition, in the present invention, add the step describing bad brilliant map, bad brilliant map is then applied as choosing except reference time bad brilliant (having damage crystal grain).
For above-mentioned feature and advantage of the present invention can be become apparent, special embodiment below, and coordinate accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the flow chart of a kind of crystal grain system of selection of one embodiment of the invention;
Fig. 2 illustrate the sorting carrier that the crystal grain system of selection of Fig. 1 uses and on the schematic diagram of crystal grain;
Fig. 3 illustrates the schematic diagram of the brilliant map of evil idea that the crystal grain system of selection of Fig. 1 uses;
Fig. 4 illustrate Fig. 2 and Fig. 3 sorting carrier and on the crystal grain schematic diagram overlapped with bad brilliant map;
Fig. 5 illustrate the another kind of sorting carrier that the crystal grain system of selection of Fig. 1 uses and on the schematic diagram of crystal grain;
Fig. 6 illustrates the schematic diagram of the bad brilliant map of another kind that the crystal grain system of selection of Fig. 1 uses;
Fig. 7 illustrate Fig. 5 and Fig. 6 sorting carrier and on the crystal grain schematic diagram overlapped with bad brilliant map.
Description of reference numerals:
100: sorting carrier;
100a: framework;
100b: blue film;
102: crystal grain;
102a: first crystal grain;
108: carrier telltale mark;
200: bad brilliant map;
201: first brilliant mark;
202: bad brilliant mark;
204: bearing mark;
206: barcode label;
208: Orientation on map marks;
S110 ~ S150: step.
Embodiment
The crystal grain system of selection of the present embodiment comprises the following steps: that a survey, sorting, machine vision, bad brilliant map (bad die map) description and bad crystalline substance are chosen and removes.It should be noted that in the present embodiment, after the step of machine vision being moved to the step of sorting, to replace existing Manual Visual Inspection step, therefore the uncertainty artificially judged for crystal grain damaging judge can be eliminated.In addition, add the step describing bad brilliant map, bad brilliant map is then applied as choosing except reference time bad brilliant (having damage crystal grain).
Specifically, please refer to Fig. 1, Fig. 1 is the flow chart of a kind of crystal grain system of selection of one embodiment of the invention, in the crystal grain system of selection of the present embodiment, first, as shown in step S110, point surveys multiple crystal grain (such as LED grain), to measure the photoelectric characteristic of these crystal grain.Then, as shown in step S120, these crystal grain with close photoelectric characteristic are transferred to sorting carrier.In the present embodiment, as shown in Figure 2, Fig. 2 illustrate the sorting carrier that the crystal grain system of selection of Fig. 1 uses and on the schematic diagram of crystal grain, sorting carrier 100 is such as the sticking blue film of tool, and these crystal grain 102 then adhere to sorting carrier 100.
As shown in step S130, these crystal grain 102 observed on sorting carrier 100 by automation optical detection (AOI) equipment, to produce observed result.Observed result comprises the position of these crystal grain 102 on sorting carrier 100 and whether these crystal grain 102 has damage.Afterwards, as shown in step s 140, bad brilliant map is described according to observed result.As shown in Figure 3, Fig. 3 illustrates the schematic diagram of the brilliant map of evil idea that the crystal grain system of selection of Fig. 1 uses, and bad brilliant ground Figure 200 has multiple bad brilliant mark 202, to indicate the position damaging the wounded in these crystal grain 102.In the present embodiment, bad brilliant ground Figure 200 is described according to observed result by the built-in module of same automation optical detection apparatus or other electronic installation.
As shown in step S150, the bad brilliant mark 202 according to bad brilliant ground Figure 200 is chosen and is damaged the wounded except in these crystal grain 102.The mode of choosing except crystal grain 102 can adopt manually choose except or machine choose and remove.In the present embodiment, as shown in Figure 4, Fig. 4 illustrate Fig. 2 and Fig. 3 sorting carrier and on the crystal grain schematic diagram overlapped with bad brilliant map, can overlapping bad brilliant ground Figure 200 and sorting carrier 100, brilliantly to mark 202 by bad and be aligned to the crystal grain 102 having damage corresponding to it.In the process of aiming at, first the crystal grain 102a in the upper left corner most on sorting carrier 100 can be overlapped in the head crystalline substance mark 201 in the most upper left corner of bad brilliant ground Figure 200, to reach correct location.Then, the crystal grain 102 that bad brilliant mark 202 is aimed at is removed.It should be noted that when first crystal grain 102a is also classified as bad brilliant (having damage crystal grain), the character (such as pattern or color) of first brilliant mark 201 can be same or similar with bad brilliant mark, removes in order in subsequent step.
Please refer to Fig. 4, Fig. 4 illustrate Fig. 2 and Fig. 3 sorting carrier and on the crystal grain schematic diagram overlapped with bad brilliant map, in order to overlap bad brilliant ground Figure 200 and sorting carrier 100, bad brilliant ground Figure 200 is incident upon on sorting carrier 100 with image format by display unit (such as flat-panel screens, touch surface display or projector).Therefore, when manually to choose except bad crystalline substance, human eye can pass through translucent sorting carrier 100 and sees the bad brilliant ground Figure 200 projected on it.When selecting touch surface display to project bad brilliant ground Figure 200, artificial directly touch-control can be utilized to change bad brilliant ground Figure 200 of another sorting carrier 100 of next correspondence, to increase bad brilliant choosing except speed.
Please refer to Fig. 4, in order to overlap bad brilliant ground Figure 200 and sorting carrier 100, also bad brilliant ground Figure 200 is exported by printing device with hard copy, and then overlapping bad brilliant ground Figure 200 and sorting carrier 100, brilliantly to mark 202 by bad and be aligned to the crystal grain 102 having damage corresponding to it.When manually to choose except bad crystalline substance, human eye can pass through translucent sorting carrier 100 and sees the bad brilliant ground Figure 200 overlapped.Therefore, when manually to choose except time bad brilliant, can pass through translucent sorting carrier 100 and see bad brilliant ground Figure 200 below it.
Refer again to Fig. 2 and Fig. 3, in order to ensure the correct aligning on direction, except first crystal grain 102a being overlapped in first brilliant mark 201, bad brilliant ground Figure 200 also can have bearing mark 204, and it may correspond to the direction of the crystal grain 102 on sorting carrier 100.For example, as the amplification position of Fig. 2, the shape of first crystal grain 102a of crystal grain 102 has directivity, therefore the bearing mark 204 that can set bad brilliant ground Figure 200 is parallel to the direction of first crystal grain 102a of crystal grain 102.
Please refer to Fig. 3, in order to ensure observed result correspond to correct sorting carrier 100 and on crystal grain 102, bad brilliant ground Figure 200 also can have barcode label 206, with the numbering of these crystal grain 102 of correspondence on sorting carrier 100.
Please refer to Fig. 5 and Fig. 6, Fig. 5 illustrate the another kind of sorting carrier that the crystal grain system of selection of Fig. 1 uses and on the schematic diagram of crystal grain, Fig. 6 illustrates the schematic diagram of the bad brilliant map of another kind that the crystal grain system of selection of Fig. 1 uses, in another embodiment, sorting carrier 100 can have multiple carrier telltale mark 108, bad brilliant ground Figure 200 has multiple Orientation on map mark 208, and these Orientation on map mark 208 corresponds to these carrier telltale marks 108.These carrier telltale marks 108 are configurable on the diagonal of sorting carrier 100, and these Orientation on map mark on the 208 configurable diagonal in going bad brilliant ground Figure 200.Therefore, as shown in Figure 7, Fig. 7 illustrate Fig. 5 and Fig. 6 sorting carrier and on the crystal grain schematic diagram overlapped with bad brilliant map, when bad brilliant ground Figure 200 is overlapped in sorting carrier 100, by these Orientation on map mark 208 is aimed at these carrier telltale marks 108 respectively, this brilliant mark 202 of can giving a piece of bad advice is aligned to the crystal grain 102 having damage corresponding to it.In the present embodiment, these carrier telltale marks 108 after automation optical detection (AOI), can utilize the spray printing module set up in AOI equipment to be previously formed on sorting carrier 100 in spray printing mode, but the present invention is not limited thereto.
Refer again to Fig. 5, in the present embodiment, sorting carrier 100 can comprise framework 100a and blue film 100b, and blue film 100b opens and is placed on framework 100a, and these crystal grain 102 adhere to blue film 100b, and these carrier telltale marks 108 can position at framework 100a.When framework 100a is transparent or semitransparent, can pass through framework 100a and see these Orientation on map mark 208, so that these Orientation on map mark 208 is aimed at these carrier telltale marks 108 respectively, so that bad brilliant mark 202 is aligned to the crystal grain 102 having damage corresponding to it.
In sum, in the present invention, after the step of machine vision being moved to the step of sorting, to replace existing Manual Visual Inspection step, therefore the uncertainty artificially judged for crystal grain damaging judge can be eliminated, thus improve the consistency of crystal grain damaging judge, save the time cost of Manual Visual Inspection simultaneously.In addition, in the present invention, add the step describing bad brilliant map, bad brilliant map is then applied as choosing except reference time bad brilliant (having damage crystal grain).
Last it is noted that above each embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to foregoing embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (13)
1. a crystal grain system of selection, is characterized in that, comprising:
Point surveys multiple crystal grain, to measure the photoelectric characteristic of described multiple crystal grain;
Described multiple crystal grain with close photoelectric characteristic is transferred to sorting carrier;
Observe the described multiple crystal grain on described sorting carrier by automation optical detection apparatus, to produce observed result, wherein said observed result comprises the position of described multiple crystal grain on described sorting carrier and whether described multiple crystal grain has damage;
Describe bad brilliant map according to described observed result, the brilliant map of wherein said evil idea has at least one bad brilliant mark, is indicated the position damaging the wounded in described multiple crystal grain by display unit with image format; And
Described bad brilliant mark according to the brilliant map of described evil idea is chosen and is damaged the wounded except in described multiple crystal grain.
2. crystal grain system of selection according to claim 1, is characterized in that, in the step describing the brilliant map of described evil idea, describes bad brilliant map by described automation optical detection apparatus or electronic installation according to described observed result.
3. crystal grain system of selection according to claim 1, is characterized in that, the brilliant map of described evil idea has bearing mark, with the direction of the described multiple crystal grain of correspondence on described sorting carrier.
4. crystal grain system of selection according to claim 1, is characterized in that, the brilliant map of described evil idea has barcode label, with the numbering of the described multiple crystal grain of correspondence on described sorting carrier.
5. crystal grain system of selection according to claim 1, it is characterized in that, described sorting carrier has multiple carrier telltale mark, and the brilliant map of described evil idea has multiple Orientation on map mark, and described multiple Orientation on map mark corresponds to described multiple carrier telltale mark.
6. crystal grain system of selection according to claim 1, is characterized in that, the step of choosing except damaging the wounded in described multiple crystal grain according to the brilliant map of described evil idea comprises:
The overlapping brilliant map of described evil idea and described sorting carrier, be aligned to make described bad brilliant mark the described crystal grain having damage corresponding to it; And
The described bad brilliant described crystal grain aimed at that marks is removed.
7. crystal grain system of selection according to claim 6, is characterized in that, the step of the brilliant map of overlapping described evil idea and described sorting carrier comprises:
Brilliant for described evil idea map is incident upon on described sorting carrier with image format by described display unit.
8. crystal grain system of selection according to claim 1, is characterized in that, described display unit is flat-panel screens, touch surface display or projector.
9. the brilliant map production method of evil idea, is characterized in that, comprising:
By multiple crystal grain that automation optical detection apparatus is observed on sorting carrier, to produce observed result, wherein said observed result comprises the position of described multiple crystal grain and whether described multiple crystal grain damages; And
Describe bad brilliant map according to described observed result, the brilliant map of wherein said evil idea has at least one bad brilliant mark, is indicated the position damaging the wounded in described multiple crystal grain by display unit with image format.
10. the brilliant map production method of evil idea according to claim 9, is characterized in that, in the step describing the brilliant map of described evil idea, describes bad brilliant map by described automation optical detection apparatus or electronic installation according to described observed result.
The brilliant map production method of 11. evil idea according to claim 9, it is characterized in that, the brilliant map of described evil idea has bearing mark, with the direction of the described multiple crystal grain of correspondence on described sorting carrier.
The brilliant map production method of 12. evil idea according to claim 9, it is characterized in that, the brilliant map of described evil idea has barcode label, with the numbering of the described multiple crystal grain of correspondence on described sorting carrier.
The brilliant map production method of 13. evil idea according to claim 9, it is characterized in that, described sorting carrier has multiple carrier telltale mark, and the brilliant map of described evil idea has multiple Orientation on map mark, and described multiple Orientation on map mark corresponds to described multiple carrier telltale mark.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361902804P | 2013-11-12 | 2013-11-12 | |
| US61/902,804 | 2013-11-12 | ||
| TW103100407 | 2014-01-06 | ||
| TW103100407A TWI494560B (en) | 2013-11-12 | 2014-01-06 | Method for selecting a die and method for generating a bad die map |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104637833A true CN104637833A (en) | 2015-05-20 |
| CN104637833B CN104637833B (en) | 2017-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410486306.2A Active CN104637833B (en) | 2013-11-12 | 2014-09-22 | Crystal grain selection method and bad crystal map generation method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068589A (en) * | 2016-12-22 | 2017-08-18 | 厦门市三安集成电路有限公司 | A kind of crystal grain selection system and method based on image recognition |
| CN107527843A (en) * | 2017-08-29 | 2017-12-29 | 上海华力微电子有限公司 | Wafer laser mark process implementation method and system based on CAD |
| CN110165026A (en) * | 2019-04-04 | 2019-08-23 | 华为技术有限公司 | LED chip and preparation method thereof, display module, intelligent terminal |
| CN114146950A (en) * | 2021-10-14 | 2022-03-08 | 佛山市国星半导体技术有限公司 | Sorting method of LED wafers |
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| CN101369516A (en) * | 2007-08-17 | 2009-02-18 | 京元电子股份有限公司 | Method for marking wafer, method for marking poor product crystal grain, method for wafer contraposition, and wafer test machine |
| CN101431039A (en) * | 2007-11-08 | 2009-05-13 | 久元电子股份有限公司 | Wafer detection system |
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2014
- 2014-09-22 CN CN201410486306.2A patent/CN104637833B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6021380A (en) * | 1996-07-09 | 2000-02-01 | Scanis, Inc. | Automatic semiconductor wafer sorter/prober with extended optical inspection |
| CN101369516A (en) * | 2007-08-17 | 2009-02-18 | 京元电子股份有限公司 | Method for marking wafer, method for marking poor product crystal grain, method for wafer contraposition, and wafer test machine |
| CN101431039A (en) * | 2007-11-08 | 2009-05-13 | 久元电子股份有限公司 | Wafer detection system |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068589A (en) * | 2016-12-22 | 2017-08-18 | 厦门市三安集成电路有限公司 | A kind of crystal grain selection system and method based on image recognition |
| CN107527843A (en) * | 2017-08-29 | 2017-12-29 | 上海华力微电子有限公司 | Wafer laser mark process implementation method and system based on CAD |
| CN107527843B (en) * | 2017-08-29 | 2020-02-21 | 上海华力微电子有限公司 | Method and system for realizing wafer laser identification process based on computer aided design |
| CN110165026A (en) * | 2019-04-04 | 2019-08-23 | 华为技术有限公司 | LED chip and preparation method thereof, display module, intelligent terminal |
| CN114146950A (en) * | 2021-10-14 | 2022-03-08 | 佛山市国星半导体技术有限公司 | Sorting method of LED wafers |
| CN114146950B (en) * | 2021-10-14 | 2023-11-14 | 佛山市国星半导体技术有限公司 | Sorting method of LED wafers |
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| CN104637833B (en) | 2017-07-21 |
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