CN104626684A - Glass laminated body and electronic device manufacturing method - Google Patents
Glass laminated body and electronic device manufacturing method Download PDFInfo
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- CN104626684A CN104626684A CN201410643730.3A CN201410643730A CN104626684A CN 104626684 A CN104626684 A CN 104626684A CN 201410643730 A CN201410643730 A CN 201410643730A CN 104626684 A CN104626684 A CN 104626684A
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- inorganic layer
- glass substrate
- supporting substrates
- glass
- electronic device
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/06—Interconnection of layers permitting easy separation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Joining Of Glass To Other Materials (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to a glass laminated body and an electronic device manufacturing method. The glass laminated body comprises a support substrate with an inorganic layer, and a glass substrate. The support substrate is composed of a support substrate and an inorganic layer arranged on the support substrate. The glass substrate is laminated on the surface of the inorganic layer in a peelable manner. That is, the inorganic layer is arranged on the opposite side of the support substrate. The inorganic layer is composed of SiC1-xOx and/or SiN1-yOy as the surface of the inorganic layer, wherein x=0.10-0.90 and y=0.10-0.90. The surface roughness Ra of the inorganic layer is 0.20 nm-1.00 nm.
Description
Technical field
The present invention relates to the manufacture method of glass laminate and electronic device.
Background technology
In recent years, slimming, the lightweight of the electronic devices (electronic equipment) such as solar cell (PV), liquid crystal panel (LCD), organic EL panel (OLED) are advancing, thus the thin plateization of the glass substrate that these electronic devices are used also advances.On the other hand, when causing the intensity of glass substrate not enough because of thin plate, the treatability of glass substrate can be made in the manufacturing process of electronic device to reduce.
Therefore, recently, from the viewpoint of the treatability improving glass substrate, a kind of following method is proposed: the duplexer preparing the inorganic thin film of supporting glass glass substrate being layered in band inorganic thin film, the glass substrate of duplexer is implemented the manufacture process of element, afterwards, glass substrate is made to be separated with duplexer (patent document 1).
Patent document 1: Japanese Laid-Open 2011-184284 publication
Summary of the invention
the problem that invention will solve
The supporting glass of the present inventors to the band inorganic thin film be made up of metal oxide recorded concrete in patent document 1 is studied.Found that to there is the situation that stackability (stacked is ease) when making glass substrate be layered on inorganic thin film is poor.That is, even if inorganic thin film and glass substrate overlap also can not be naturally closely sealed, even and if mechanical pressurization is carried out to inorganic thin film and glass substrate, also there is the situation of not closely sealed or easy stripping.
In addition, in recent years, along with the requirement of the high performance of electronic device, process is implemented be desirably in higher temperature conditions when the manufacture of electronic device under, therefore, the present inventors under the high temperature conditions (such as, 600 DEG C, 1 hour) implement heating to the supporting glass of the band inorganic thin film of patent document 1.Found that, even if stackability is good, when wanting after a heating treatment to peel off glass substrate with specific method, also to exist and the poor situation of fissility such as cannot to peel off.In this case, produce following problem, that is, after manufacturing device under the high temperature conditions, the glass substrate being formed with element cannot be peeled off from duplexer.
The present invention considers above problem points and makes, its object is to, even if provide the manufacture method of the electronic device being configured in the excellent and glass laminate that fissility after carrying out the process under hot conditions, between inorganic layer and glass substrate is also excellent of stackability between inorganic layer on supporting substrates and glass substrate and using this glass laminate.
for the scheme of dealing with problems
The present inventors conduct in-depth research to realize described order, found that, by being formed on supporting substrates, there is the inorganic layer of specific surface composition and surface roughness, can make inorganic layer relative to the stackability of glass substrate and fissility all excellent, this completes the present invention.
That is, the invention provides following technical scheme (1) ~ technical scheme (8).
Technical scheme (1) provides a kind of glass laminate, and wherein, this glass laminate comprises: the supporting substrates of band inorganic layer, and it has supporting substrates and is configured in the inorganic layer on described supporting substrates; And glass substrate, it is layered on the surface of the side contrary with described supporting substrates side of inorganic layer on the surface, namely in described inorganic layer in the mode that can peel off, and described inorganic layer contains SiC
1-xo
xand/or SiN
1-yo
yas the composition on described inorganic layer surface, wherein, x=0.10 ~ 0.90, y=0.10 ~ 0.90, the surface roughness Ra on described inorganic layer surface is 0.20nm ~ 1.00nm.
Technical scheme (2) is the glass laminate according to described technical scheme (1), and wherein, the surface roughness (Ra) on described inorganic layer surface is more than 0.30nm.
Technical scheme (3) is the glass laminate according to described technical scheme (1) or technical scheme (2), and wherein, the surface roughness (Ra) on described inorganic layer surface is below 0.50nm.
Technical scheme (4) is the glass laminate according to any one of described technical scheme (1) ~ technical scheme (3), and wherein, described x and y is the number of more than 0.20.
Technical scheme (5) is the glass laminate according to any one of described technical scheme (1) ~ technical scheme (4), and wherein, described x and y is the number of less than 0.50.
Technical scheme (6) is the glass laminate according to any one of described technical scheme (1) ~ technical scheme (5), and wherein, described supporting substrates is glass substrate.
Technical scheme (7) is the glass laminate according to any one of described technical scheme (1) ~ technical scheme (6), wherein, after implementing the heating of 1 hour with 600 DEG C, also the supporting substrates of described band inorganic layer and described glass substrate can be peeled away.
Technical scheme (8) provides a kind of manufacture method of electronic device, wherein, the manufacture method of this electronic device comprises following operation: component formation process, the surface of the described glass substrate in the glass laminate according to any one of described technical scheme (1) ~ technical scheme (7) forms component used for electronic device and obtains the duplexer of having electronic device component; And separation circuit, the supporting substrates of described band inorganic layer is peeled off from the duplexer of described having electronic device component and obtains the electronic device with described glass substrate and described component used for electronic device.
the effect of invention
Adopt the present invention, even if the manufacture method of the electronic device being configured in the excellent and glass laminate that fissility after carrying out the process under hot conditions, between inorganic layer and glass substrate is also excellent of stackability between inorganic layer on supporting substrates and glass substrate and using this glass laminate can be provided.
Accompanying drawing explanation
Fig. 1 is the schematic cross sectional views of the embodiment representing glass laminate of the present invention.
(A) of Fig. 2 and (B) of Fig. 2 is the process chart of the manufacture method of electronic device of the present invention.
Fig. 3 is the schematic cross sectional views of the evaluation method representing fissility.
Detailed description of the invention
Below, the preferred configuration of the manufacture method of glass laminate of the present invention and electronic device is described with reference to accompanying drawing, but the present invention is not limited to following embodiment, and can apply various distortion and replacement to following embodiment without departing from the scope of the present invention.
Glass laminate of the present invention is by making the inorganic layer had as the specific surface (inorganic layer surface) in the face contacted with glass substrate form between supporting substrates and glass substrate substantially, thus, stackability between inorganic layer and glass substrate is excellent, even and if after carrying out the process under hot conditions, the fissility between inorganic layer and glass substrate is also excellent.
Below, first, describe the preferred embodiment of glass laminate in detail, afterwards, describe the preferred embodiment of the manufacture method of the electronic device using this glass laminate in detail.
glass laminate
Fig. 1 is the schematic cross sectional views of an embodiment of glass laminate of the present invention.
As shown in Figure 1, glass laminate 10 has supporting substrates 16 and the glass substrate 18 of band inorganic layer, and the supporting substrates 16 of this band inorganic layer is made up of supporting substrates 12 and inorganic layer 14.In glass laminate 10, will the 1st first type surface 18a of the surperficial 14a (surface of the side contrary with supporting substrates 12 side) of the inorganic layer of the inorganic layer 14 of the supporting substrates 16 of inorganic layer and glass substrate 18 be with as lamination surface by stacked in the mode that can peel off for the supporting substrates 16 and glass substrate 18 being with inorganic layer.That is, the face of the side of inorganic layer 14 is fixed on supporting substrates 12, and the face of its opposite side contacts with the 1st first type surface 18a of glass substrate 18, and the interface between inorganic layer 14 and glass substrate 18 is closely sealed in the mode that can peel off.In other words, inorganic layer 14 possesses easy fissility relative to the 1st first type surface 18a of glass substrate 18.
In addition, use this glass laminate 10 till component formation process described later.That is, use this glass laminate 10 till the 2nd first type surface 18b at this glass substrate 18 forms the components used for electronic device such as liquid crystal indicator on the surface.Afterwards, the interface of supporting substrates 16 between glass substrate 18 of band inorganic layer is stripped, and the supporting substrates 16 of band inorganic layer does not become the component forming electronic device.The supporting substrates 16 of separated band inorganic layer can be stacked with new glass substrate 18, and can be reused as new glass laminate 10.
In the present invention, described fixing closely sealed upper different in peel strength (namely peeling off required stress) from (can peel off), refer to that fixing peel strength is larger than closely sealed peel strength.Specifically, the peel strength at the interface between inorganic layer 14 and supporting substrates 12 is greater than the peel strength at the interface between inorganic layer 14 in glass laminate 10 and glass substrate 18.
In addition, closely sealed the referring to that can peel off can be peeled off, and refers to peel off under the prerequisite peeled off occurs in the face not making to be fixed wtih.That is, refer in glass laminate 10 of the present invention, when having carried out the operation making glass substrate 18 be separated with supporting substrates 12, peel off in closely sealed face (interface between inorganic layer 14 and glass substrate 18), do not peel off in the face be fixed wtih.Thus, when carrying out glass laminate 10 to be separated into the operation of glass substrate 18 and supporting substrates 12, glass laminate 10 is separated into these two parts of supporting substrates 16 of glass substrate 18 and band inorganic layer.
Below, first, describe supporting substrates 16 and the glass substrate 1 of the band inorganic layer forming glass laminate 10 in detail, afterwards, describe the manufacturing step of glass laminate 10 in detail.
with the supporting substrates of inorganic layer
Supporting substrates 16 with inorganic layer comprises supporting substrates 12 and configuration (fixing) inorganic layer 14 on the surface of supporting substrates 12.Inorganic layer 14 is snugly configured at the mode that can peel off and glass substrate 18 phase described later the outermost be with in the supporting substrates 16 of inorganic layer.
Below, the embodiment of supporting substrates 12 and inorganic layer 14 is described in detail.
supporting substrates
Supporting substrates 12 is substrates as following: it has the 1st first type surface and the 2nd first type surface and coordinate with the inorganic layer 14 be configured on the 1st first type surface and supports and reinforcing glass substrate 18, and the distortion, scratch, breakage etc. of glass substrate 18 when preventing the manufacture of component used for electronic device in component formation process described later (manufacturing the operation of component used for electronic device).
As supporting substrates 12, the metallic plates etc. such as such as glass plate, plastic plate and SUS plate can be used.Supporting substrates 12, is preferably formed by the material that the difference of the linear expansion coefficient between glass substrate 18 is less with in heat treated situation in component formation process, is more preferably formed by the material identical with glass substrate 18.That is, supporting substrates 12 is preferably glass plate.The glass plate of supporting substrates 12 particularly preferably for being made up of the glass material identical with glass substrate 18.
The thickness of supporting substrates 12 both can be thicker than glass substrate 18 described later, also can be thinner than glass substrate 18 described later.Preferably, the thickness of supporting substrates 12 is selected based on the thickness of the thickness of glass substrate 18, the thickness of inorganic layer 14 and glass laminate described later 10.Such as be designed to process the substrate that thickness is 0.5mm in current component formation process and the thickness sum of the thickness of glass substrate 18 and inorganic layer 14 is 0.1mm, then the thickness of supporting substrates 12 is set to 0.4mm.In normal circumstances, the thickness of supporting substrates 12 is preferably 0.2mm ~ 5.0mm.
When supporting substrates 12 is glass plates, from the viewpoint of easily process, not easily crack, the thickness of glass plate is preferably more than 0.08mm.In addition, from the viewpoint of expect glass plate have formed to peel off after component used for electronic device time glass plate moderately can bend and not crack such rigidity, the thickness of glass plate is preferably below 1.0mm.
inorganic layer
Inorganic layer 14 is layers that configuration (fixing) contacts with the 1st first type surface 18a of glass substrate 18 on the 1st first type surface of supporting substrates 12.By being arranged on supporting substrates 12 by inorganic layer 14, even if after long time treatment under the high temperature conditions, that also can suppress between inorganic layer 14 with glass substrate 18 is bonding.
In the present invention, inorganic layer 14 is containing SiC
1-xo
xand/or SiN
1-yo
y(x=0.10 ~ 0.90, y=0.10 ~ 0.90) is as the composition of inorganic layer surface 14a.
At this, if x and y be less than 0.10 number, then inorganic layer 14 is poor relative to the fissility of glass substrate 18, if be greater than the number of 0.90, then inorganic layer 14 is poor relative to the stackability of glass substrate 18, as long as x and y is in described scope, the stackability of inorganic layer 14 and fissility are just all excellent.
Its reason is still not clear, but can think, its reason is, the carborundum less by the difference of the electronegativity making element mutual and/or silicon nitride contain suitable oxygen, thus make surface flatness optimization or not easily produce between inorganic layer and glass substrate when heating to be changed to stronger combination by more weak combination.
In addition, from the viewpoint of making fissility more excellent, x and y is preferably the number of more than 0.20, from the viewpoint of making stackability more excellent, x and y is preferably the number of less than 0.50, and from the viewpoint of making stackability and fissility all more excellent, x and y is more preferably 0.20 ~ 0.50.
At this, the inorganic layer surface 14a of inorganic layer 14 is the positions of the outmost surface (outmost surface of the side contrary with supporting substrates 12 side) comprising inorganic layer 14, specifically, be towards the position till supporting substrates 12 lateral extent 1.0nm or be towards the position till supporting substrates 12 lateral extent 10%, be all defined as thinner position when the thickness (whole thickness) of inorganic layer 14 is set to 100% from the outmost surface of inorganic layer 14 from the outmost surface of inorganic layer 14.In addition, " outmost surface " herein refers to " plane comprising the surperficial peak portion ignored in surface roughness situation ".
Inorganic layer surface 14a in inorganic layer 14 and the composition except the 14a of inorganic layer surface all can pass through X-ray photoelectron spectroscopy (XPS) and measure.
In addition, the composition except the 14a of inorganic layer surface in inorganic layer 14 both can be different from the composition of inorganic layer surface 14a, also can be identical with the composition of inorganic layer surface 14a.
In addition, in the present invention, the surface roughness (Ra) of inorganic layer surface 14a is 0.20nm ~ 1.00nm.If the surface roughness (Ra) of the inorganic layer surface 14a contacted with glass substrate 18 is less than 0.20nm, then inorganic layer 14 is poor relative to the fissility of glass substrate 18, if the surface roughness (Ra) of inorganic layer surface 14a is greater than 1.00nm, then inorganic layer 14 is poor relative to the stackability of glass substrate 18, as long as the surface roughness (Ra) of inorganic layer surface 14a is in described scope, stackability and fissility are just all excellent.
From the viewpoint of making fissility more excellent, the surface roughness (Ra) of inorganic layer surface 14a is preferably more than 0.30nm, from the viewpoint of making stackability more excellent, the surface roughness (Ra) of inorganic layer surface 14a is preferably below 0.50nm, from the viewpoint of making stackability and fissility all more excellent, the surface roughness (Ra) of inorganic layer surface 14a is more preferably 0.30nm ~ 0.50nm.
As the surface roughness method controlling inorganic layer surface 14a, the method for the formation condition (membrance casting condition) such as changing inorganic layer 14 can be listed, specifically, the method etc. of the thickness changing inorganic layer 14 can be listed.
In addition, Ra (arithmetic average roughness) measures according to Japanese Industrial Standards JIS B 0601 (calendar year 2001 revision).The content of Japanese Industrial Standards JIS B 0601 (calendar year 2001 revision) is incorporated herein as reference.
The average coefficient of linear expansion of inorganic layer 14 at 25 DEG C ~ 300 DEG C is (following, simply referred to as " average coefficient of linear expansion ") be not particularly limited, when glass plate is used as supporting substrates 12, the average coefficient of linear expansion of inorganic layer 14 is preferably 10 × 10
-7/ DEG C ~ 200 × 10
-7/ DEG C.As long as the average coefficient of linear expansion of inorganic layer 14 is within the scope of this, inorganic layer 14 and glass plate (SiO will be made
2) between the difference of average coefficient of linear expansion diminish, can suppress to misplace in high temperature environments between the supporting substrates 16 of glass substrate 18 and band inorganic layer.
Inorganic layer 14 is preferably containing described SiC
1-xo
xand/or SiN
1-yo
yas main component, wherein, x=0.10 ~ 0.90, y=0.10 ~ 0.90.At this, main component refers to, for inorganic layer 14 total amount, total amount of these compositions is more than 90 quality %, is preferably more than 98 quality %, is more preferably more than 99 quality %, is particularly preferably more than 99.999 quality %.
As the thickness of inorganic layer 14, from the viewpoint of marresistance, be preferably 5nm ~ 5000nm, be more preferably 10nm ~ 500nm.
In FIG, inorganic layer 14 is recorded into individual layer, but inorganic layer 14 also can stacked two-layer more than.When stacked two-layer more than, inorganic layer 14 also can be the mutually different composition of each layer.In addition, in this case, " thickness of inorganic layer " refers to the aggregate thickness of all layers.
Usually, inorganic layer 14 is located at whole of supporting substrates 12 as shown in Figure 1, but in the scope not affecting effect of the present invention, inorganic layer 14 also can be located at the part on supporting substrates 12 surface.Such as, inorganic layer 14 also can be arranged on supporting substrates 12 on the surface with island, striated.
Inorganic layer 14 illustrates excellent heat resistance.Therefore, even if glass laminate 10 is exposed under the high temperature conditions, also the chemical change of inorganic layer itself is not easily caused, between inorganic layer 14 and glass substrate described later 18, also not easily produce chemical bond, thus not easily produce the situation that inorganic layer 14 that re-separation (Japanese: Chong Bao Fromization) causes is attached to glass substrate 18.
At this, re-separation refers to, the peel strength at the interface between inorganic layer 14 and glass substrate 18 is greater than any one intensity in the intensity (bulk strength: bulk strength) of the peel strength at the interface between supporting substrates 12 and inorganic layer 14 and the material of inorganic layer 14 itself.If the interface between inorganic layer 14 and glass substrate 18 produces re-separation, then the composition of inorganic layer 14 is easily attached to glass substrate 18 surface and easily makes the purifying of the surface of glass substrate 18 become difficulty.Inorganic layer 14 is attached to glass substrate 18 surface and refers to, whole inorganic layer 14 is attached to glass substrate 18 surface and inorganic layer 14 surface and damage occurs and makes a part for the composition on inorganic layer 14 surface be attached to the situations such as glass substrate 18 surface.
the manufacture method of the supporting substrates with inorganic layer
As the manufacture method of supporting substrates 16 of band inorganic layer, such as, following method can be listed: use SiC target material or SiN target also import the non-active gas such as Ar and O
2or CO
2deng the mist containing oxygen atom gas, the inorganic layer 14 of the composition had as described inorganic layer surface 14a is set on supporting substrates 12 by vapour deposition method, sputtering method or CVD etc.Now, by the amount containing oxygen atom gas in adjustment mist, the oxygen amount (that is, the value of x and y) of inorganic layer surface 14a can be controlled.In addition, as manufacturing condition, suitably optimum condition can be selected according to used material etc.
In addition, after supporting substrates 12 is formed inorganic layer 14, in order to control the surface roughness (Ra) of inorganic layer surface 14a, the process surface of inorganic layer 14 being carried out to smooth (Japanese: cut Ru) can be implemented.As this process, such as ion sputtering process etc. can be listed.
glass substrate
Glass substrate 18 its 1st first type surface 18a and inorganic layer 14 closely sealed, and be provided with component used for electronic device described later on the 2nd first type surface 18b of the side contrary with inorganic layer 14 side.
About the kind of glass substrate 18, it can be common glass substrate, can list the glass substrate etc. of the such display unit of such as LCD, OLED.The chemical proofing of glass substrate 18, resistance to excellent moisture permeability, and percent thermal shrinkage is lower.As the index of percent thermal shrinkage, the linear expansion coefficient of regulation in Japanese Industrial Standards JIS R 3102 (nineteen ninety-five correction) can be used.The content of Japanese Industrial Standards JIS R 3102 (nineteen ninety-five revision) is incorporated herein as reference.
Glass substrate 18 can by by frit melting, melten glass is configured as tabular and obtains.This manufacturing process can be common manufacturing process, can use such as float glass process, fusion method, slot draw method, vertical drawing process (fourcault process), mechanical cylinder process (Labbers process) etc.In addition, especially the glass substrate of thinner thickness utilize by the glass heats being temporarily configured as tabular to shapable temperature and the method (horizontal sheet process) of being undertaken stretching by methods such as stretchings and making it thinning shaping obtain.
The glass of glass substrate 18 is not particularly limited, be preferably alkali-free pyrex, pyrex, soda-lime glass, vagcor and other take silica as the oxide based glass of main component.As oxide based glass, the content being preferably the silica converted based on oxide is the glass of 40 quality % ~ 90 quality %.
As the glass of glass substrate 18, the kind of applicable device, the glass of its manufacturing process can be adopted.Such as, the glass substrate of liquid crystal panel easily has an impact to liquid crystal due to the stripping of alkali metal component, is therefore made up of (wherein, generally including alkaline earth metal component) the glass (alkali-free glass) of alkali-free metal ingredient in fact.Like this, the glass of glass substrate 18 suitably can be selected based on the kind of be suitable for device and its manufacturing process.
The thickness of glass substrate 18 is not particularly limited, but considers from the slimming of glass substrate 18 and/or light-weighted viewpoint, and the thickness of glass substrate 18 is generally below 0.8mm, is preferably below 0.3mm, more preferably below 0.15mm.When the thickness of glass substrate 18 is greater than 0.8mm, the slimming of glass substrate 18 and/or light-weighted requirement can not be met.When the thickness of glass substrate 18 is below 0.3mm, the flexibility that glass substrate 18 is good can be given.When the thickness of glass substrate 18 is below 0.15mm, glass substrate 18 can be rolled into web-like.In addition, from the viewpoint of making the process that is easy to manufacture, glass substrate 18 of glass substrate 18 easy, the thickness of glass substrate 18 is preferably more than 0.03mm.
In addition, glass substrate 18 also can be made up of two-layer above material, and in this case, the material forming each layer both can be congener material, also can be different types of material.In addition, in this case, " thickness of glass substrate " refers to the aggregate thickness of all layers.
Also can on the 1st first type surface 18a of glass substrate 18 further stacked inorganic thin film layer.
When inorganic thin film layer configuration (fixing) is on glass substrate 18, in glass laminate, the inorganic layer 14 of the supporting substrates 16 of band inorganic layer contacts with inorganic thin film layer.By inorganic thin film layer is arranged on glass substrate 18, even if after long time treatment under the high temperature conditions, also can suppress further glass substrate 18 and band inorganic layer supporting substrates 16 between bonding.
The embodiment of inorganic thin film layer is not particularly limited, but preferably, inorganic thin film layer contains at least a kind of material chosen from the group be made up of metal oxide, metal nitride, metal oxynitride, metal carbides, carbonitride, metal silicide and metal fluoride.Wherein, from the viewpoint of making, the fissility of glass substrate 18 is more excellent, and inorganic thin film layer, preferably containing metal oxide, more preferably contains tin indium oxide.
As metal oxide, metal nitride, metal oxynitride, oxide, nitride, the nitrogen oxide of the element of more than a kind that such as chooses from Si, Hf, Zr, Ta, Ti, Y, Nb, Na, Co, Al, Zn, Pb, Mg, Bi, La, Ce, Pr, Sm, Eu, Gd, Dy, Er, Sr, Sn, In and Ba can be listed.More specifically, titanium oxide (TiO can be listed
2), indium oxide (In
2o
3), tin oxide (SnO
2), zinc oxide (ZnO), gallium oxide (Ga
2o
3), tin indium oxide (ITO), indium zinc oxide (IZO), zinc-tin oxide (ZTO) and gallium-doped zinc oxide (GZO) etc.
As metal carbides, carbonitride, carbide, the carbonitride of the element of more than a kind that such as chooses from Ti, W, Si, Zr, Nb can be listed.As metal silicide, the silicide of the element of more than a kind that such as chooses from Mo, W, Cr can be listed.As metal fluoride, the fluoride of the element of more than a kind that such as chooses from Mg, Y, La, Ba can be listed.
glass laminate
Glass laminate 10 of the present invention be using the inorganic layer of the supporting substrates 16 of described band inorganic layer surface 14a and the 1st first type surface 18a of glass substrate 18 as lamination surface by the duplexer that the supporting substrates 16 of band inorganic layer and glass substrate 18 are laminated in the mode that can peel off.In other words, glass laminate 10 of the present invention is inorganic layer 14 duplexers between supporting substrates 12 and glass substrate 18.
the manufacture method of glass laminate
The manufacture method of glass laminate 10 of the present invention is not particularly limited, specifically, following method can be listed: by after the supporting substrates 16 of band inorganic layer and glass substrate 18 overlap under atmospheric pressure environment, such as under the effect of the deadweight of glass substrate 18 or by gently pressing the 2nd first type surface 18b of glass substrate 18 at a place, thus make to produce closely sealed starting point in faying surface, closely sealed lighting from this is closely sealed is expanded naturally; Use roller, pressing plate the band supporting substrates 16 of inorganic layer and glass substrate 18 to be crimped and make closely sealedly from closely sealed, to light expansion etc.Utilize roller, pressing plate crimp, except make inorganic layer 14 and glass substrate 18 closely sealed further, the bubble removal that can also will be mixed between inorganic layer 14 and glass substrate 18 relatively easily, so preferably.
In addition, if laminate method by vacuum, Vacuum Pressure method for making crimps, then bubble preferably can be suppressed to be mixed into, guarantee good closely sealed, be therefore preferred.By crimping under vacuum, also have advantage as follows: when remaining small bubble, bubble does not become large yet because of heating, thus not easily causes straining defect.
When making the supporting substrates 16 of band inorganic layer closely sealed in the mode that can peel off with glass substrate 18, preferably, the fully face of the side contacted with each other of cleaning inorganic layer 14 and glass substrate 18, and under the environment that cleanliness factor is higher, they are stacked.Because the higher flatness of cleanliness factor is better, so preferably.
The method of cleaning is not particularly limited, and can list and such as after the surface with alkaline aqueous solution cleaning inorganic layer 14 or glass substrate 18, use water to carry out the method for cleaning further.
Further, in order to obtain good laminated arrangement, preferably, after the face of the side contacted with each other to inorganic layer 14 and glass substrate 18 is cleaned, plasma treatment is implemented, afterwards by stacked with glass substrate 18 for the supporting substrates 16 of band inorganic layer.As the plasma used in plasma treatment, such as atmospheric pressure plasma, vacuum plasma etc. can be listed.
Glass laminate 10 of the present invention can be used as various uses, can list and such as manufacture display unit panel described later, purposes etc. that PV, thin-film secondary battery, surface are formed with the electronic components such as the semiconductor crystal wafer of circuit.In addition, when this purposes, mostly glass laminate 10 is exposed to (such as more than 1 hour) under hot conditions (such as more than 350 DEG C).
At this, display unit panel comprises: LCD, OLED, Electronic Paper, field emission panel, quantum dot LED panel, MEMS (Micro E1ectro Mechanica1 Systems: microelectromechanical systems) shutter face plate (Japanese: シ ャ ッ タ ー パ ネ Le) etc.
electronic device and its manufacture method
Then, the preferred embodiment of electronic device and its manufacture method is described in detail.
Fig. 2 is the schematic cross sectional views of each manufacturing process in the preferred embodiment of the manufacture method representing electronic device of the present invention successively.The preferred embodiment of electronic device of the present invention comprises component formation process and separation circuit.
Below, the step of material and each operation used in each operation is described in detail with reference to Fig. 2.First, component formation process is described in detail.
component formation process
Component formation process is the operation glass substrate in glass laminate being formed component used for electronic device.
More specifically, as shown in (A) of Fig. 2, in this operation, the 2nd first type surface 18b of glass substrate 18 forms component 20 used for electronic device, thus the duplexer 22 of fabricated ribbon component used for electronic device.
First, describe the component used for electronic device 20 used in this operation in detail, describe the step of operation afterwards in detail.
component used for electronic device (functional element)
Component at least partially on the 2nd first type surface 18b that component 20 used for electronic device is formed in the glass substrate 18 in glass laminate 10 and for forming electronic device.More specifically, as component 20 used for electronic device, display unit panel, solar cell, thin-film secondary battery or surface can be listed and be formed with the component that the electronic components etc. such as the semiconductor crystal wafer of circuit use.Display unit panel comprises: organic EL panel, field emission panel etc.
Such as component used for solar batteries, silicon type component used for solar batteries can list as the transparency electrode such as tin oxide of positive pole, with the silicon layer that p layer/i layer/n layer represents and the metal etc. as negative pole, the component used for solar batteries of other types can list the various components etc. corresponding with compound type, dye sensitization type, quantum point type etc.
In addition, as thin-film secondary battery component, can list in type lithium ion as the transparency electrode such as metal or metal oxide of positive pole and negative pole, the lithium compound as dielectric substrate, the metal as current collection layer, resin etc. as sealant, the thin-film secondary battery component of other types can list the various components etc. corresponding with ni-mh type, polymer-type, ceramic electrolyte type etc.
In addition, as electronic component component, can list the metal as conductive part, the silica as insulation division, silicon nitride etc. in CCD, CMOS, other electronic component components can list the various components etc. corresponding with the various sensor of pressure sensor acceleration sensor, rigidity printed base plate, flexible printing substrate, rigid and flexibility printed base plate etc.
the step of operation
The manufacture method of the duplexer 22 of described having electronic device component is not particularly limited, and known method can be utilized on the 2nd first type surface 18b of the glass substrate 18 of glass laminate 10 to form component 20 used for electronic device according to the kind of the member of formation of component used for electronic device.
In addition, component 20 used for electronic device is not whole (hereinafter referred to as " whole components ") of the component be finally formed on the 2nd first type surface 18b of glass substrate 18, can be the part (hereinafter referred to as " partial component ") in whole component yet.Also can using the glass substrate of band portion component glass substrate (suitable with electronic device described later) as the whole component of band in operation afterwards.In addition, also can at other components used for electronic device of the upper formation of release surface (the 1st first type surface) of the glass substrate of the whole component of band.And, also can be that the duplexer of the whole component of band is assembled, afterwards, the duplexer of the supporting substrates 16 of band inorganic layer from the whole component of band be peeled off, thus manufactures electronic device.Further, also can be use two to be with the duplexer of whole component to assemble electronic device, afterwards, the duplexer of the supporting substrates 16 of two band inorganic layers from the whole component of band be peeled off, thus manufactures the electronic device with two glass substrates.
Such as to manufacture the situation of OLED, the surface in order to the 2nd first type surface 18b of the glass substrate 18 in glass laminate 10 forms organic EL tectosome, and carry out following various layer formation, processing operation: form transparency electrode; And then on the face being formed with transparency electrode evaporation hole injection layer, hole transporting layer, luminescent layer, electron supplying layer etc.; Form backplate; Sealing plate is used to seal etc.As the formation of these layers, processing operation, specifically, the bonding process etc. of such as film forming process, vapor deposition treatment, sealing plate can be listed.
In addition, the manufacture method of such as TFT-LCD has the various operations such as following operation: TFT formation process, uses anti-corrosion liquid on the metal film formed by the common membrane formation process such as CVD and sputtering method and metal oxide film, form pattern thus form thin film transistor (TFT) (TFT) on the 2nd first type surface 18b of the glass substrate 18 of glass laminate 10; CF formation process, uses anti-corrosion liquid to form pattern, thus form colour filter (CF) on the 2nd first type surface 18b of the glass substrate 18 of another glass laminate 10; And bonding process, by stacked for the device substrate of the device substrate of band TFT and band CF.
In TFT formation process, CF formation process, known photoetching technique, etching technique etc. are adopted to form TFT, CF at the 2nd first type surface 18b of glass substrate 18.Now, anti-corrosion liquid can be used as the coating liquid that pattern is formed.
In addition, before formation TFT, CF, also can clean the 2nd first type surface 18b of glass substrate 18 as required.Cleaning method can use the cleaning of known dry method, wet-cleaning.
In bonding process, between the duplexer and the duplexer of band CF of band TFT, inject liquid crystal material they are stacked.As the method injecting liquid crystal material, such as, there is decompression injection method, drip injection method.
separation circuit
Separation circuit is such operation: peeled off from the duplexer 22 of the having electronic device component obtained described component formation process by the supporting substrates 16 of band inorganic layer, obtain the electronic device 24 (glass substrate of having electronic device component) comprising component 20 used for electronic device and glass substrate 18.That is, separation circuit is the operation duplexer 22 of having electronic device component being separated into the band supporting substrates 16 of inorganic layer and the glass substrate 24 of having electronic device component.
Component used for electronic device 20 when peeling off on glass substrate 18 is a part for required all member of formation, also can after releasing remaining member of formation be formed on glass substrate 18.
The inorganic layer of inorganic layer 14 surface 14a is not particularly limited with the method that the 1st first type surface 18a of glass substrate 18 peels away (separation).Such as can peel off as follows: sharp cutlery shape component inserted the interface between inorganic layer 14 and glass substrate 18 and gives the initial point of stripping, afterwards, then water and compressed-air actuated fluid-mixing being blowed to this interface.
Preferably, with the supporting substrates 12 of the duplexer 22 of having electronic device component be positioned at upside, component used for electronic device 20 side be positioned at downside mode the duplexer 22 of having electronic device component is arranged on platform, by component 20 side used for electronic device vacuum suction on platform (when two faces are all laminated with supporting substrates, carry out successively), in this condition, first cutlery is inserted the interface between inorganic layer 14 and glass substrate 18.And, utilize multiple vacuum suction pad to adsorb supporting substrates 12 side afterwards, and make vacuum suction pad increase successively near the position certainly inserting cutlery.So, the interface between inorganic layer 14 and glass substrate 18 forms air layer, and this air layer expands to whole of interface, thus can easily be peeled off by the supporting substrates 16 of band inorganic layer.
In addition, such as, when to make a part for the supporting substrates 16 of band inorganic layer, from the mode that glass substrate 18 is outstanding, the supporting substrates 16 of band inorganic layer is laminated in glass substrate 18, following stripping means can be listed: be fixed on by glass substrate 18 on fixed station (Reference numeral 31 with reference in Fig. 3 described later), give the initial point of stripping as described above and inorganic layer 14 and glass substrate 18 peeled away or makes when not giving the initial point peeled off L font instrument (Reference numeral 32 with reference in Fig. 3 described later) catch on inorganic layer surface 14a and the supporting substrates 16 of inorganic layer will be with to mention to the direction away from fixed station, and inorganic layer 14 and glass substrate 18 are peeled away.
The electronic device 24 obtained by described operation is applicable to the small-sized display unit that the mobile terminals such as manufacture mobile phone, smart mobile phone, PDA, panel computer use.Display unit mainly refers to LCD or OLED, and LCD comprises: TN type, STN type, FE type, TFT type, mim type, IPS type, VA type etc.Can both apply when arbitrary display unit substantially in passive driving types, active-drive.
embodiment
Below, utilize embodiment etc. to illustrate the present invention, but the present invention is not limited by described example.
In following example (embodiment and comparative example), employ the glass plate (width 100mm, length 30mm, thickness 0.2mm, the linear expansion coefficient 38 × 10 that are made up of alkali-free borosilicate glass as glass substrate
-7/ DEG C " AN100 " (trade name, Asahi Glass company manufacture)).
In addition, as supporting substrates, employ the glass plate (width 90mm, length 30mm, thickness 0.5mm, the linear expansion coefficient 38 × 10 that are made up of alkali-free borosilicate glass equally
-7/ DEG C " AN100 " (trade name, Asahi Glass company manufacture)).
example I-1 ~ routine I-8
form inorganic layer
Alkaline aqueous solution is utilized to clean a first type surface of supporting substrates and make it purifying.Then, use SiC target material and import Ar and O to purifying face
2mist, formed containing SiC by magnetron sputtering method
1-xo
x(x=0.50) as the inorganic layer (thickness 10nm ~ 200nm) of inorganic layer surface composition, thus the supporting substrates of the band inorganic layer of each example shown in table 1 is obtained.
In addition, inorganic layer surface composition be use x-ray photoelectron spectrometer (manufactures of XPS-7000, Rigaku company) and by XPS (X-ray photoelectron spectroscopy) carry out measuring (following, equally).
control surface roughness
When forming the inorganic layer of each example, by adjusting the thickness of inorganic layer when not changing composition, thus make the surface roughness (Ra) on the inorganic layer surface of each example different.
In addition, surface roughness (Ra) be use AFM (model: L-trace (Nanonavi), Hitachi High-Technologies company manufacture) and with Japanese Industrial Standards JIS B 0601 (calendar year 2001 revision) for benchmark carry out measuring (following, equally).
the evaluation of stackability
Then, successively use alkaline aqueous solution and water to clean the inorganic layer surface of the inorganic layer of the supporting substrates of the band inorganic layer of each example and the 1st first type surface of glass substrate, thus make two faces purifying.
Afterwards, glass substrate is overlapped in inorganic layer surface, and with following benchmark evaluation the stackability between inorganic layer and glass substrate.The results are shown in following table 1.In addition, as long as result is "○" or " △ ", just stackability excellence can be evaluated as.
Zero: after overlap, under the effect of the deadweight of glass substrate or by gently pressing glass substrate at a place, thus make to produce closely sealed starting point in faying surface, make closely sealed from produce closely sealed light and naturally expand, finally make in whole faying surface all closely sealed.
△: although produce closely sealed starting point, does not closely sealedly expand naturally, by using vacuum pressing to crimp, thus makes in whole faying surface all closely sealed.
×: even if use vacuum pressing to crimp, both do not produce closely sealed starting point, do not see closely sealed expansion yet, or after use vacuum pressing crimps, do not produce closely sealed starting point, although see closely sealed expansion, but when decontroling from crimped status, faying surface is easily peeled off.
the evaluation of fissility
Fig. 3 is the schematic cross sectional views of the evaluation method representing fissility.
First, make the 1st first type surface of the inorganic layer of inorganic layer surface and glass substrate purifying in the same manner as the evaluation of stackability.Afterwards, make supporting substrates and the glass substrate aligned in position in the longitudinal direction of the band inorganic layer of each example, and be piled up in the mode of at one end aliging at the supporting substrates of the band inorganic layer by each example and glass substrate as shown in Figure 3.In addition, because the length on the band supporting substrates of inorganic layer and the width of glass substrate is different, therefore, when by the band supporting substrates of inorganic layer and glass substrate overlapping in the mode of at one end aliging time, at the other end, as shown in Figure 3, a part for the supporting substrates of inorganic layer is with to give prominence to from glass substrate.
After overlap, make to produce closely sealed starting point between the supporting substrates of band inorganic layer and glass substrate, use vacuum pressing to crimp, thus make in whole faying surface all closely sealed, resulting in the glass laminate of each example.
Then, in air atmosphere, with 600 DEG C, heating in 1 hour is implemented to the glass laminate of each example obtained.
Then, disbonded test has been carried out.Specifically, first, two-sided tape is used to be fixed on fixed station (representing with Reference numeral 31 in figure 3) by the 2nd first type surface of the glass substrate in glass laminate.
Then, as shown in Figure 3, L font instrument (representing with Reference numeral 32 in figure 3) is made to catch on the inorganic layer surface of the supporting substrates of the band inorganic layer given prominence to from glass substrate and use machinery the supporting substrates of band inorganic layer to be mentioned with the speed of 10mm/min to the direction away from fixed station, the fissility between inorganic layer and glass substrate with following benchmark evaluation.The results are shown in following table 1.In addition, as long as result is "○" or " △ ", then can be evaluated as: even if after long time treatment under the high temperature conditions, fissility is also excellent.
Zero: the supporting substrates of band inorganic layer can be made not crack peel off.
△: can a part be peeled off, but the supporting substrates of band inorganic layer creates crackle in midway.
×: can not peel off.
table 1
As described in shown in table 1, be less than in the routine I-1 of 0.20nm in surface roughness (Ra), fissility is poor, be greater than in the routine I-8 of 1.00nm in surface roughness (Ra), stackability is poor, and in routine I-2 ~ routine I-7 in the scope that surface roughness (Ra) is 0.20nm ~ 1.00nm, stackability and fissility are all excellent.In addition, among routine I-2 ~ routine I-7, the fissility of the routine I-3 that surface roughness (Ra) is more than 0.30nm ~ routine I-7 is more excellent, and the stackability of the routine I-2 that surface roughness (Ra) is below 0.50nm ~ routine I-5 is more excellent.
In addition, according to described result, confirm: in an embodiment, the peel strength at the interface between inorganic layer with supporting substrates is greater than the peel strength (also identical in following each embodiment) at the interface between inorganic layer and glass substrate.
example II-1 ~ routine II-6
form inorganic layer
Use a first type surface of alkaline aqueous solution cleaning supporting substrates and make it purifying.Then, use SiC target material and import Ar and O to purifying face
2mist, formed containing SiC by magnetron sputtering method
1-xo
x(x=0.05 ~ 0.99) as the inorganic layer of inorganic layer surface composition, thus obtains the supporting substrates of the band inorganic layer of each example shown in table 2.
Now, for each example, by using volume ratio (Ar/O
2) different mist, thus make SiC
1-xo
xin the number of x different.
the control of surface roughness
When forming the inorganic layer of each example, by the thickness of inorganic layer is adjusted in the scope of 10nm ~ 200nm, thus the surface roughness (Ra) on inorganic layer surface is controlled at 0.40nm.
the evaluation of stackability and fissility
Then, have rated stackability and fissility in the same manner as routine I-1 ~ routine I-8.Metewand is also identical.The results are shown in following table 2.
table 2
As described in shown in table 2, at the SiC of inorganic layer surface composition
1-xo
xin x be less than in the routine II-1 of 0.10, fissility is poor, and be greater than in the routine II-6 of 0.90 at x, stackability is poor, and in routine II-2 ~ routine II-5 in the scope that x is 0.10 ~ 0.90, stackability and fissility are all excellent.In addition, among routine II-2 ~ II-5, x is that the fissility of the routine II-3 ~ routine II-5 of more than 0.20 is more excellent, and x is that the stackability of the routine II-2 ~ routine II-4 of less than 0.50 is more excellent.
example III-1 ~ routine III-6
form inorganic layer
Use a first type surface of alkaline aqueous solution cleaning supporting substrates and make it purifying.Then, use SiN target and import Ar and O to purifying face
2mist, formed containing SiN by magnetron sputtering method
1-yo
y(y=0.05 ~ 0.99) as the inorganic layer of inorganic layer surface composition, thus obtains the supporting substrates of the band inorganic layer of each example shown in table 3.
Now, for each example, by using volume ratio (Ar/O
2) different mist, thus make SiN
1-yo
yin the number of y different.
the control of surface roughness
In the same manner as routine II-1 ~ routine II-6, the surface roughness (Ra) on inorganic layer surface is controlled at 0.40nm.
the evaluation of stackability and fissility
Then, have rated stackability and fissility in the same manner as routine I-1 ~ routine I-8.Metewand is also identical.The results are shown in following table 3.
table 3
As described in shown in table 3, at the SiN of inorganic layer surface composition
1-yo
yin y be less than in the routine III-1 of 0.10, fissility is poor, and be greater than in the routine III-6 of 0.90 at y, stackability is poor, and in routine III-2 ~ routine III-5 in the scope that y is 0.10 ~ 0.90, stackability and fissility are all excellent.In addition, among routine III-2 ~ routine III-5, y is that the fissility of the routine III-3 ~ routine III-5 of more than 0.20 is more excellent, and y is that the stackability of the routine III-2 ~ routine III-4 of less than 0.50 is more excellent.
example IV
In the present example, the inorganic layer of the concrete ITO as metal oxide used in patent document 1 is defined.Specifically, alkaline aqueous solution is utilized to clean a first type surface of supporting substrates and make it purifying.Then, on purifying face, formed the ITO layer (indium tin oxide layer) of thickness 150nm by magnetron sputtering method, thus obtain the supporting substrates of band ITO layer.The surface roughness Ra of ITO layer is 0.85nm.
Have rated stackability and fissility in the same manner as routine I-1 ~ routine I-8, its result, stackability is " △ ", and fissility is "×".
example V
In the present example, be used in the glass laminate manufactured in routine I-4 and make OLED.
More specifically, by the 2nd first type surface of the glass substrate of sputtering method in glass laminate forms molybdenum film, and gate electrode is defined by have employed photolithographic etching.Then, the 2nd main surface side of glass substrate of gate electrode is being provided with according to the further film forming of order of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon by plasma CVD method, then, form molybdenum film by sputtering method, and define gate insulating film, semiconductor element portion and source/drain electrode by have employed photolithographic etching.Then, form silicon nitride film by plasma CVD method further in the 2nd main surface side of glass substrate and form passivation layer, afterwards, forming indium oxide tin film by sputtering method, and define pixel electrode by have employed photolithographic etching.
Then, in the 2nd main surface side of glass substrate, further by vapour deposition method, film forming in the following order: by 4,4 ', 4 "-three (3-methylphenylphenyl amino) triphenylamine film forming be hole injection layer, will two [(N-naphthyl)-N-phenyl] benzidine film forming be hole transporting layer, will at oxine aluminium complex (Alq
3) in be mixed with 40 volume %2, the material film forming of two [4-[N-(4-methoxyphenyl)-N-phenyl] aminostyryl] naphthalene-1, the 5-dintrile (BSN-BCN) of 6-is luminescent layer, by Alq
3film forming is electron transfer layer.Then, form aluminium film by sputtering method in the 2nd main surface side of glass substrate, and define opposite electrode by have employed photolithographic etching.Then, the 2nd first type surface of glass substrate being formed with opposite electrode seals across the adhesive linkage of a ultraviolet hardening glass substrate of fitting again.Glass laminate that obtained by described step, that have organic EL tectosome is on the glass substrate equivalent to the duplexer of having electronic device component.
Then, make the sealing side vacuum suction of the glass laminate of acquisition in platform, afterwards, it is the interface between the inorganic layer of the corner positions of the stainless steel cutlery insertion glass laminate of 0.1mm and glass substrate by thickness, and the supporting substrates of band inorganic layer is separated from glass laminate, thus obtains oled panel and (be equivalent to electronic device.Hereinafter referred to as panel A).IC driver is connected to the panel A be made into, and makes IC driver drives at normal temperatures and pressures, result, in drive area, do not find that display is uneven.
example VI
In the present example, be used in the glass laminate manufactured in routine I-4 and make LCD.
Preparing two glass laminate, first, by the 2nd first type surface of the glass substrate in sputtering method wherein a glass laminate forms molybdenum film, and defining gate electrode by have employed photolithographic etching.Then, the 2nd main surface side of glass substrate of gate electrode is being provided with according to the further film forming of order of silicon nitride, intrinsic amorphous silicon, N-shaped non-crystalline silicon by plasma CVD method, then, form molybdenum film by sputtering method, and define gate insulating film, semiconductor element portion and source/drain electrode by have employed photolithographic etching.Then, form silicon nitride film by plasma CVD method further in the 2nd main surface side of glass substrate and form passivation layer, afterwards, forming indium oxide tin film by sputtering method, and define pixel electrode by have employed photolithographic etching.Then, on the 2nd first type surface of glass substrate being formed with pixel electrode, be coated with polyimide resin liquid by rolling method, and form oriented layer by heat cure, then grind.The glass laminate of acquisition is called glass laminate X1.
Then, by the 2nd first type surface of the glass substrate in sputtering method wherein another glass laminate forms chromium film, and light shield layer is defined by have employed photolithographic etching.Then, be provided with the further coating chromatic photoresistance of the 2nd main surface side of glass substrate of light shield layer by squash type rubbing method, and lithographically defining colour filter with heat cure.Then, form indium oxide tin film by sputtering method further in the 2nd main surface side of glass substrate, thus define opposite electrode.Then, by squash type rubbing method coated UV line cured resin liquid on the 2nd first type surface of glass substrate being provided with opposite electrode, and lithographically column spacer is defined with heat cure.Then, on the 2nd first type surface of glass substrate being formed with column spacer, be coated with polyimide resin liquid by rolling method, and form oriented layer by heat cure, then grind.Then, in the 2nd main surface side of glass substrate, sealing resin liquid is depicted as frame-shaped by distributor method (Japanese: デ ィ ス ペ Application サ method), and by drip post liquid crystal Method by liquid crystal drop in frame, afterwards, use described glass laminate X1,2nd main surface side of the glass substrate of two glass laminate is bonded each other, and is obtained the duplexer with LCD by ultraviolet curing and heat cure.Below, the duplexer with LCD is called the duplexer X2 of panel here.
Then, the supporting substrates two being worn inorganic layer is peeled off from the duplexer X2 of panel, thus obtains the LCD B (being equivalent to electronic device) be made up of with the substrate being formed with colour filter the substrate being formed with tft array.
IC driver is connected to the LCD B be made into, and makes IC driver drives at normal temperatures and pressures, result, in drive area, do not find that display is uneven.
Understand the present invention in detail with reference to specific embodiment, but the present invention can carry out various change, amendment under the prerequisite not departing from spirit of the present invention and protection domain, this it will be apparent to those skilled in the art that.
The Japanese patent application 2013-233109 that the application applied for based on November 11st, 2013, is incorporated into its content in this description as reference.
description of reference numerals
10, glass laminate; 12, supporting substrates; 14, inorganic layer; 14a, inorganic layer surface (surface of the side contrary with supporting substrates side in inorganic layer); 16, the supporting substrates of inorganic layer is with; 18, glass substrate; 1st first type surface of 18a, glass substrate; 2nd first type surface of 18b, glass substrate; 20, component used for electronic device; 22, the duplexer of having electronic device component; 24, electronic device; 31, fixed station; 32, L font instrument.
Claims (8)
1. a glass laminate, wherein, this glass laminate comprises:
With the supporting substrates of inorganic layer, it has supporting substrates and is configured in the inorganic layer on described supporting substrates; And
Glass substrate, it is layered on the surface of the side contrary with described supporting substrates side of inorganic layer on the surface, namely in described inorganic layer in the mode that can peel off,
Described inorganic layer contains SiC
1-xo
xand/or SiN
1-yo
yas the composition on described inorganic layer surface, wherein, x=0.10 ~ 0.90, y=0.10 ~ 0.90,
The surface roughness Ra on described inorganic layer surface is 0.20nm ~ 1.00nm.
2. glass laminate according to claim 1, wherein,
The surface roughness Ra on described inorganic layer surface is more than 0.30nm.
3. glass laminate according to claim 1 and 2, wherein,
The surface roughness Ra on described inorganic layer surface is below 0.50nm.
4. glass laminate according to any one of claim 1 to 3, wherein,
Described x and y is the number of more than 0.20.
5. glass laminate according to any one of claim 1 to 4, wherein,
Described x and y is the number of less than 0.50.
6. glass laminate according to any one of claim 1 to 5, wherein,
Described supporting substrates is glass substrate.
7. glass laminate according to any one of claim 1 to 6, wherein,
After implementing the heating of 1 hour with 600 DEG C, also the supporting substrates of described band inorganic layer and described glass substrate can be peeled away.
8. a manufacture method for electronic device, wherein, the manufacture method of this electronic device comprises following operation:
Component formation process, the surface of the described glass substrate in the glass laminate according to any one of claim 1 to 7 forms component used for electronic device and obtains the duplexer of having electronic device component; And
Separation circuit, peels off the supporting substrates of described band inorganic layer from the duplexer of described having electronic device component and obtains the electronic device with described glass substrate and described component used for electronic device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013233109A JP6176067B2 (en) | 2013-11-11 | 2013-11-11 | GLASS LAMINATE AND ELECTRONIC DEVICE MANUFACTURING METHOD |
| JP2013-233109 | 2013-11-11 |
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| Publication Number | Publication Date |
|---|---|
| CN104626684A true CN104626684A (en) | 2015-05-20 |
| CN104626684B CN104626684B (en) | 2018-06-05 |
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| CN201410643730.3A Active CN104626684B (en) | 2013-11-11 | 2014-11-11 | The manufacturing method of glass laminate and electronic device |
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|---|---|
| JP (1) | JP6176067B2 (en) |
| KR (1) | KR20150054693A (en) |
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| US10543662B2 (en) | 2012-02-08 | 2020-01-28 | Corning Incorporated | Device modified substrate article and methods for making |
| TWI617437B (en) | 2012-12-13 | 2018-03-11 | 康寧公司 | Facilitated processing for controlling bonding between sheet and carrier |
| US10014177B2 (en) | 2012-12-13 | 2018-07-03 | Corning Incorporated | Methods for processing electronic devices |
| US10086584B2 (en) | 2012-12-13 | 2018-10-02 | Corning Incorporated | Glass articles and methods for controlled bonding of glass sheets with carriers |
| US9340443B2 (en) | 2012-12-13 | 2016-05-17 | Corning Incorporated | Bulk annealing of glass sheets |
| US10510576B2 (en) | 2013-10-14 | 2019-12-17 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| KR102353030B1 (en) | 2014-01-27 | 2022-01-19 | 코닝 인코포레이티드 | Articles and methods for controlled bonding of thin sheets with carriers |
| SG11201608442TA (en) | 2014-04-09 | 2016-11-29 | Corning Inc | Device modified substrate article and methods for making |
| KR20160146712A (en) * | 2014-04-25 | 2016-12-21 | 아사히 가라스 가부시키가이샤 | Glass laminate body, and method for manufacturing electronic device |
| JP2017165589A (en) * | 2014-08-01 | 2017-09-21 | 旭硝子株式会社 | Supporter substrate with inorganic film and glass laminate, manufacturing method thereof, and manufacturing method of electronic device |
| KR102573207B1 (en) | 2015-05-19 | 2023-08-31 | 코닝 인코포레이티드 | Articles and methods for bonding sheets and carriers |
| JP6488912B2 (en) * | 2015-06-25 | 2019-03-27 | Ａｇｃ株式会社 | Packing method for substrate with adsorption layer and packing apparatus for substrate with adsorption layer |
| CN117534339A (en) | 2015-06-26 | 2024-02-09 | 康宁股份有限公司 | Methods and articles comprising a sheet and a carrier |
| TW201825623A (en) | 2016-08-30 | 2018-07-16 | 美商康寧公司 | Siloxane plasma polymers for sheet bonding |
| TWI821867B (en) | 2016-08-31 | 2023-11-11 | 美商康寧公司 | Articles of controllably bonded sheets and methods for making same |
| WO2019036710A1 (en) | 2017-08-18 | 2019-02-21 | Corning Incorporated | Temporary bonding using polycationic polymers |
| JP6492140B1 (en) * | 2017-09-22 | 2019-03-27 | ジオマテック株式会社 | Resin substrate laminate and method of manufacturing electronic device |
| JP7431160B2 (en) | 2017-12-15 | 2024-02-14 | コーニング インコーポレイテッド | Methods for processing substrates and manufacturing articles including bonded sheets |
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2013
- 2013-11-11 JP JP2013233109A patent/JP6176067B2/en active Active
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2014
- 2014-11-11 TW TW103139115A patent/TWI645979B/en active
- 2014-11-11 KR KR1020140155996A patent/KR20150054693A/en not_active Application Discontinuation
- 2014-11-11 CN CN201410643730.3A patent/CN104626684B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005288852A (en) * | 2004-03-31 | 2005-10-20 | Dainippon Printing Co Ltd | Transparent gas barrier film and its manufacturing method |
| CN102471129A (en) * | 2009-09-18 | 2012-05-23 | 日本电气硝子株式会社 | Method for producing glass film, method for treating glass film and glass film laminate |
| WO2012144499A1 (en) * | 2011-04-22 | 2012-10-26 | 旭硝子株式会社 | Laminate, method for producing same, and use of same |
| JP2013184346A (en) * | 2012-03-07 | 2013-09-19 | Asahi Glass Co Ltd | Glass laminate, and method for producing electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6176067B2 (en) | 2017-08-09 |
| TW201522076A (en) | 2015-06-16 |
| CN104626684B (en) | 2018-06-05 |
| TWI645979B (en) | 2019-01-01 |
| KR20150054693A (en) | 2015-05-20 |
| JP2015093405A (en) | 2015-05-18 |
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Address after: Tokyo, Japan, Japan Patentee after: AGC Corporation Address before: Tokyo, Japan, Japan Patentee before: Asahi Glass Co., Ltd. |