CN104617196B - 一种发光二极管及其制造方法 - Google Patents
一种发光二极管及其制造方法 Download PDFInfo
- Publication number
- CN104617196B CN104617196B CN201510047727.XA CN201510047727A CN104617196B CN 104617196 B CN104617196 B CN 104617196B CN 201510047727 A CN201510047727 A CN 201510047727A CN 104617196 B CN104617196 B CN 104617196B
- Authority
- CN
- China
- Prior art keywords
- insulating barrier
- layer
- spiral coil
- type layer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 20
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 229910004205 SiNX Inorganic materials 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052682 stishovite Inorganic materials 0.000 claims description 12
- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 8
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 241000209094 Oryza Species 0.000 claims 2
- 230000005291 magnetic effect Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 130
- 230000002745 absorbent Effects 0.000 description 5
- 239000002250 absorbent Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510047727.XA CN104617196B (zh) | 2015-01-30 | 2015-01-30 | 一种发光二极管及其制造方法 |
| PCT/CN2016/072684 WO2016119732A1 (fr) | 2015-01-30 | 2016-01-29 | Diode électroluminescente et son procédé de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510047727.XA CN104617196B (zh) | 2015-01-30 | 2015-01-30 | 一种发光二极管及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104617196A CN104617196A (zh) | 2015-05-13 |
| CN104617196B true CN104617196B (zh) | 2017-10-03 |
Family
ID=53151552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510047727.XA Active CN104617196B (zh) | 2015-01-30 | 2015-01-30 | 一种发光二极管及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104617196B (fr) |
| WO (1) | WO2016119732A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104617196B (zh) * | 2015-01-30 | 2017-10-03 | 华灿光电股份有限公司 | 一种发光二极管及其制造方法 |
| CN105226153A (zh) * | 2015-10-26 | 2016-01-06 | 厦门乾照光电股份有限公司 | 一种具有高扩展效应的发光二极管 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271917A (zh) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | 半导体发光器件的抗静电结构及其制造方法 |
| CN101271916A (zh) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | 抗静电氮化镓发光器件及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6958498B2 (en) * | 2002-09-27 | 2005-10-25 | Emcore Corporation | Optimized contact design for flip-chip LED |
| JP4386031B2 (ja) * | 2005-12-26 | 2009-12-16 | 住友電気工業株式会社 | 半導体デバイスの製造方法および窒化ガリウム結晶基板の識別方法 |
| TWI458130B (zh) * | 2012-02-06 | 2014-10-21 | Lextar Electronics Corp | 無線固態發光裝置 |
| CN102723259B (zh) * | 2012-06-12 | 2015-03-11 | 大连理工大学 | 一种在硅基底上制作多层微型电感线圈的uv-liga方法 |
| CN104617196B (zh) * | 2015-01-30 | 2017-10-03 | 华灿光电股份有限公司 | 一种发光二极管及其制造方法 |
-
2015
- 2015-01-30 CN CN201510047727.XA patent/CN104617196B/zh active Active
-
2016
- 2016-01-29 WO PCT/CN2016/072684 patent/WO2016119732A1/fr active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271917A (zh) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | 半导体发光器件的抗静电结构及其制造方法 |
| CN101271916A (zh) * | 2008-05-09 | 2008-09-24 | 晶能光电（江西）有限公司 | 抗静电氮化镓发光器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104617196A (zh) | 2015-05-13 |
| WO2016119732A1 (fr) | 2016-08-04 |
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|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |