CN104611676B - The preparation method of magnetic-controlled sputtering coating equipment and ito glass - Google Patents
The preparation method of magnetic-controlled sputtering coating equipment and ito glass Download PDFInfo
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- CN104611676B CN104611676B CN201510014624.3A CN201510014624A CN104611676B CN 104611676 B CN104611676 B CN 104611676B CN 201510014624 A CN201510014624 A CN 201510014624A CN 104611676 B CN104611676 B CN 104611676B
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Abstract
The invention discloses a kind of magnetic-controlled sputtering coating equipment, including the coating chamber, transition chamber, surge chamber, outlet lock chamber, downstream chamber and the shock chamber that are sequentially connected；The setting temperature of the coating chamber is 380 DEG C～600 DEG C, and the setting temperature of the shock chamber is 5 DEG C～15 DEG C, and the length of the shock chamber is 0.5m～3.0m.This magnetic-controlled sputtering coating equipment, the ito glass that ito film has been plated by control is passed sequentially through behind transition chamber, surge chamber, outlet lock chamber and downstream chamber from the higher coating chamber of temperature, by the very low shock chamber of temperature, so that the temperature of the glass substrate of plating ito film is reduced rapidly to less than 50 DEG C, the hardness of ito film layer is lifted by way of quenching, the higher ito glass of ito film layer hardness is obtained.The invention also discloses a kind of preparation method of the ito glass using above-mentioned magnetic-controlled sputtering coating equipment.
Description
Technical field
The present invention relates to coating technique field, the preparation of more particularly to a kind of magnetic-controlled sputtering coating equipment and ito glass
Method.
Background technology
ITO (tin indium oxide) is N-shaped polycrystalline state thin-film material, is most widely used at aspects such as FPD, touch-controls at present
Transparent conductive material.Either LCD, resistive touch screen or capacitive touch screen, are all made using ito glass at present in a large number
For its transparent conductive substrate.Ito glass includes glass substrate and the ito thin film being laminated on glass substrate.
The most frequently used production technology of ito glass is magnetron sputtering at present.Either it is used for LCD, touch screens or electric capacity
Screen, by magnetron sputtering produce ito glass generally require through carryings, gluing, solidification, exposure, development, demoulding, silk-screen, divide
A series of manufacturing procedures such as cut, fit.If the hardness number of ito film layer is not high enough, ito glass is same during following process to be added
When some parts of construction equipment contact, either large or small deep or shallow scuffing can be caused in ito film aspect.Scuffing not only affects
Production yield, impact product are apparent, it is also possible to ITO lines can be caused to break, and cause feature bad.If scratching shallower and not having
Have thoroughly draw ITO lines or it is shorter and when only causing ITO lines breach, during follow-up use it is possible that because
Persistently energization work and cause the phenomenon gradually blown by ITO lines.This phenomenon continuously should at production marketing to user, in the future
Be possible to occur with during.If the feature for occurring being blown initiation because of ITO lines during user's use is bad,
It is likely to result in product to be returned goods, or even the risk claimed damages.
The reason that ito glass is also easy to produce either large or small deep or shallow scuffing in follow-up process is caused to exist
It is not high enough in the hardness number of ito glass.If the higher ito glass of hardness number, the ITO during following process can be prepared
Probability that film layer is scratched relative can be reduced, and it is also more secure that yield can also obtain a certain degree of raising, quality.
The content of the invention
Based on this, it is necessary to provide a kind of magnetic-controlled sputtering coating equipment, the ito glass higher for preparing hardness.
Further, there is provided a kind of preparation method of the higher ito glass of hardness.
A kind of magnetic-controlled sputtering coating equipment, including be sequentially connected coating chamber, transition chamber, surge chamber, outlet lock chamber,
Downstream chamber and shock chamber；
The setting temperature of the coating chamber is 380 DEG C～600 DEG C, and the setting temperature of the shock chamber is 5 DEG C～15 DEG C,
The length of the shock chamber is 0.5m～3.0m.
In one embodiment, the setting temperature of the transition chamber, surge chamber and outlet lock chamber is 200 DEG C～550
℃。
In one embodiment, the quantity of the transition chamber is 2～4 of 1 or series connection, each transition chamber
Length is 0.9m～3.6m, and the length of the surge chamber is 0.9m～3.6m, the length of the outlet lock chamber be 0.9m～
3.6m, the length of the downstream chamber is 0.9m～3.6m.
In one embodiment, the quantity of the transition chamber is 2 or 4 of series connection.
In one embodiment, the surge chamber of the magnetic-controlled sputtering coating equipment, outlet lock chamber, downstream chamber and shock chamber
By a control gate valve connection between the adjacent chamber of each two, the switch control rule of each control gate valve is two neighboring
Connection and closing between chamber.
A kind of preparation method of ito glass, comprises the steps：
Glass substrate is provided；
The glass substrate is run into the coating chamber of the magnetic-controlled sputtering coating equipment described in claim 1, adopt
The plated film mode of magnetron sputtering prepares ito thin film on the glass substrate, wherein, the setting temperature of the coating chamber is
380 DEG C～600 DEG C；
The glass substrate for having plated ito thin film is passed sequentially through into the transition chamber, surge chamber, outlet lock chamber and outlet
Room；And
The glass substrate for having plated ito thin film from the downstream chamber out is passed through into the shock chamber, obtains described
Ito glass, the setting temperature of the shock chamber is 5 DEG C～15 DEG C, and the length of the shock chamber is 0.5m～3.0m, has plated ITO
The glass substrate of film is 0.2m/min～2.5m/min in the indoor speed of service of the quenching.
In one embodiment, the setting temperature of the transition chamber, surge chamber and outlet lock chamber is 200 DEG C～550 DEG C.
In one embodiment, the quantity of the transition chamber is 2～4 of 1 or series connection, each transition chamber
Length is 0.9m～3.6m, and the length of the surge chamber is 0.9m～3.6m, the length of the outlet lock chamber be 0.9m～
3.6m, the length of the downstream chamber is 0.9m～3.6m, and the glass substrate is in the transition chamber, surge chamber, outlet lock chamber
The speed of service of interior and downstream chamber is 0.6m/min～2.5m/min.
In one embodiment, the quantity of the transition chamber is 2 or 4 of series connection.
In one embodiment, the surge chamber of the magnetic-controlled sputtering coating equipment, outlet lock chamber, downstream chamber and shock chamber
By a control gate valve connection between the adjacent chamber of each two, the switch control rule of each control gate valve is two neighboring
Connection and closing between chamber, the opening time and shut-in time of each control gate valve are 0.01s～0.2s.
This magnetic-controlled sputtering coating equipment, by control complete the ito glass of plated film from the higher coating chamber of temperature according to
It is secondary by transition chamber, surge chamber, outlet lock chamber and downstream chamber after, by the very low shock chamber of temperature so that complete plated film
The temperature of glass substrate is reduced rapidly to less than 50 DEG C, improves the hardness of ito film layer, ITO has been obtained by way of quenching
The higher ito glass of film hardness.
Description of the drawings
Fig. 1 is the structural representation of the magnetic-controlled sputtering coating equipment of an embodiment；
Fig. 2 is the flow chart of the preparation method of the ito glass of an embodiment.
Specific embodiment
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.Elaborate many details in order to fully understand this in the following description
It is bright.But the present invention can be implemented with being much different from alternate manner described here, and those skilled in the art can be not
Similar improvement is done in the case of running counter to intension of the present invention, therefore the present invention is not embodied as being limited by following public.
Refer to Fig. 1, the magnetic-controlled sputtering coating equipment 100 of an embodiment, including the coating chamber 10, mistake being sequentially connected
Cross room 20, surge chamber 30, outlet lock chamber 40, downstream chamber 50 and shock chamber (not shown).Coating chamber 10, transition chamber
20th, surge chamber 30, outlet lock chamber 40 and the arrangement of 50 linear formula of downstream chamber.
Coating chamber 10 is used to carry out magnetron sputtering plating.Preferably, in present embodiment, coating chamber 10 is included successively
Be connected and linearly the first filming room 101 of formula arrangement, the second coating chamber 102, the 3rd coating chamber 103, the 4th coating chamber 104,
5th coating chamber 105, the 6th coating chamber 106, the 7th coating chamber 107, the 8th coating chamber 108 and the 9th coating chamber 109.Wherein,
9th coating chamber 109 is connected with transition chamber 20.
Arranging nine coating chambers carries out plated film, is conducive to improving membrane uniformity, and multiple cavities plated film, it is possible to achieve many
The plated film of the complicated membrane system of layer, while respectively plated film power can also be minimized, it is to avoid cause film layer planted agent because plated film power is excessive
Power is too high.The first filming room 101, the second coating chamber 102, the 3rd coating chamber 103, the 4th coating chamber 104, the 5th coating chamber 105,
Coated heaters are provided with 6th coating chamber 106, the 7th coating chamber 107, the 8th coating chamber 108 and the 9th coating chamber 109,
For controlling the temperature of glass substrate.
It is appreciated that the first filming room 101, the second coating chamber 102, the 3rd coating chamber 103, the 4th coating chamber the 104, the 5th
Coating chamber 105, the 6th coating chamber 106, the 7th coating chamber 107, the 8th coating chamber 108 and the 9th coating chamber 109 with vacuumize
Equipment (figure is not marked) is connected, for vacuumizing to nine coating chambers, to carry out vacuum coating.
Preferably, transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50 with vaccum-pumping equipment (figure do not mark)
It is connected, the vacuum for controlling transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50 reaches plated film and from vacuum
Room enters the vacuum condition of shock chamber.By the control of each within the chamber vacuum, the glass substrate of the good ito thin film of plating is made by true
Altitude is gradually transported to atmospheric pressure environment, it is to avoid vacuum abrupt change and the breaking glass panel that causes.
Transition chamber 20 can be 2～4 of 1 or series connection.In present embodiment, transition chamber is 2 of series connection.At which
, preferably in embodiment, transition chamber is 4 of series connection for he.
General, the setting temperature of transition chamber 20, surge chamber 30 and outlet lock chamber 40 can be 200 DEG C～550 DEG C, control
Then the temperature of ito glass processed is cooled down in shock chamber suddenly, is on the one hand utilized in more than 180 DEG C of the crystallization temperature point of ITO
Ito film layer makes ito film layer top layer and internal layer all quickly cool down as the characteristic of the good conductor of heat, discharges ito film layer as far as possible
Internal stress, it is to avoid ito film layer is easy to crack because internal layer and outer layer there is larger stress difference, or causes because ITO stress differences are excessive
Ito glass angularity it is excessive；On the other hand the compactness of ito film layer by cooling down suddenly, is further lifted, increases ito film
Hardness and scratch resistance.
Preferably, the length of a transition chamber 20 is 0.9m～3.6m, and the length of surge chamber 30 is 0.9m～3.6m, is exported
The length of lock chamber 40 is 0.9m～3.6m, and the length of downstream chamber 50 is 0.9m～3.6m.
The setting temperature of shock chamber is 5 DEG C～15 DEG C, and the length of shock chamber is 0.5m～3.0m.
By the connection of a control gate valve (figure is not marked), the switch control of each control gate valve between the adjacent chamber of each two
The connection and closing between two neighboring chamber is made.Specifically, surge chamber 30 and outlet lock chamber 40, outlet 40 and of lock chamber
By controlling gate valve connection between downstream chamber 50, downstream chamber 50 and shock chamber.In coating process, glass is fixed in substrate frame and plates
Film.When moving to diverse location with continuous multiple substrate frames, each control gate valve is respectively at the state of turning off or on.Work as dress
When the substrate frame of the glass that load has plated ito thin film is run to before certain chamber, corresponding valve opening, it is thin that loading has plated ITO
The substrate frame of the glass of film controls gate valve after entering next chamber and closes.
This magnetic-controlled sputtering coating equipment 100, by controlling the ito glass for completing plated film from the higher coating chamber of temperature
After 10 pass sequentially through transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50, by the very low shock chamber of temperature, from
And cause the temperature of the glass substrate for completing plated film to be reduced rapidly to less than 50 DEG C from 200 DEG C～450 DEG C, by way of quenching
The hardness of ito film layer is improved, the higher ito glass of ito film layer hardness has been obtained.
Preferably, magnetic-controlled sputtering coating equipment 100 also includes control system (not shown), and control system is used to control glass
The operation of substrate, the work of vaccum-pumping equipment, plated film, opening and closing of each valve etc., to realize automated job, improve
Efficiency.
Having plated the time of staying of the glass substrate of film in above-mentioned each chamber is respectively the length of each chamber/operation speed
Time+control gate valve shut-in time that rate+control gate valve is opened.Therefore, control the length of the opening time and shut-in time of gate valve
It is short that cooling effect is had a certain impact.But control of the length of the opening time and shut-in time of control gate valve to vacuum
Existing affects, therefore, the opening time and shut-in time of gate valve are reasonably controlled by control system, reasonably to control vacuum
Degree and cool time.
Fig. 2 is referred to, the preparation method of the ito glass of an embodiment comprises the steps：
S10, offer glass substrate.
Glass substrate can be the conventional glass in float glass or other this areas.It is by cleaning glass substrate and dry,
It is standby.
S20, the glass substrate that S10 is obtained is fixed in substrate frame, substrate frame is run to above-mentioned magnetron sputtering plating and set
In standby 100 coating chamber 10, ito thin film is prepared on the glass substrate using magnetron sputtering.
The setting temperature of coating chamber is 380 DEG C～600 DEG C.
Preferably, magnetron sputtering plating is carried out in the case where vacuum is for 0.1Pa～0.5Pa.
Preferably, in coating process, the operating rate of glass substrate is 0.6m/min～2.5m/min.
The sputtering voltage of the ITO targets of magnetron sputtering is 200V～450V, and sputtering general power is 1Kw～60Kw.
S30, the glass substrate for having plated ito thin film that S20 is obtained is passed sequentially through transition chamber 20, surge chamber 30, outlet lock
Determine room 40 and downstream chamber 50.
Preferably, transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50 with vaccum-pumping equipment (figure do not mark)
It is connected, for controlling the vacuum of transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50.By each within the chamber
The control of vacuum, makes the glass substrate of the good ito thin film of plating gradually be transported to atmospheric pressure environment by vacuum environment, it is to avoid suddenly true
The breaking glass panel that reciprocal of duty cycle changes and causes.
Preferably, the glass substrate for having plated ito thin film passes sequentially through transition chamber 20, surge chamber 30, outlet 40 and of lock chamber
The speed of service that magnetic-controlled sputtering coating equipment 100 is run out behind downstream chamber 50 is 0.6m/min～2.5m/min.
Preferably, the control gate valve opening time and shut-in time of magnetic-controlled sputtering coating equipment 100 be 0.01s～
0.2s。
Transition chamber 20 can be 2～4 of 1 or series connection.In present embodiment, transition chamber is 2 of series connection.At which
, preferably in embodiment, transition chamber is 4 of series connection for he.
Preferably, the vacuum of transition chamber 20 is 0.003Pa～0.5Pa, the vacuum of surge chamber 30 be 0.003Pa～
0.5Pa, the vacuum for exporting lock chamber 40 are 0.003Pa～0.5Pa, and the vacuum of downstream chamber 50 is 0.003Pa～0.5Pa.
General, the setting temperature of transition chamber 20, surge chamber 30 and outlet lock chamber 40 can be 200 DEG C～550 DEG C, from
And the crystallization temperature point more than 180 DEG C of the temperature in ITO of ito glass is controlled, then cooled down in shock chamber suddenly, on the one hand
Using ito film layer as the characteristic of the good conductor of heat, ito film layer top layer and internal layer is all quickly cooled down, discharge ito film as far as possible
Layer internal stress, it is to avoid ito film layer is easy to crack because internal layer and outer layer there is larger stress difference, or because ITO stress differences it is excessive
The ito glass angularity for causing is excessive；On the other hand the compactness of ito film layer by cooling down suddenly, is further lifted, is increased
The hardness and scratch resistance of ito film.
S40, by S30 obtain from downstream chamber's glass substrate for having plated ito thin film out by shock chamber, obtain ITO
Glass.
The setting temperature of shock chamber is 5 DEG C～15 DEG C, and the length of shock chamber is 0.5m～3.0m, has plated the glass of ito thin film
Glass substrate is 0.6m/min～2.5m/min in the indoor speed of service of quenching.
The indoor pressure of quenching is atmospheric pressure.
The preparation method of this ito glass, by control complete the ito glass of plated film from the higher coating chamber of temperature according to
It is secondary by transition chamber 20, surge chamber 30, outlet lock chamber 40 and downstream chamber 50 after, by the very low shock chamber of temperature so that complete
Temperature into the glass substrate of plated film is reduced rapidly to less than 50 DEG C, and the hardness of ito film layer, system are improved by way of quenching
Obtained the higher ito glass of ito film layer hardness.
It is expanded on further below by way of specific embodiment.
Embodiment 1
1st, by cleaning glass substrate drying for standby.
2nd, make cleaning, the glass substrate of drying is run into the coating chamber of magnetic-controlled sputtering coating equipment, splashed using magnetic control
Penetrate.The setting temperature of coating chamber is 600 DEG C, and vacuum is 0.3Pa, glass substrate
Operating rate is 1.8m/min, and the voltage of magnetron sputtering is 315V, and power is 6Kw.
3rd, the glass substrate for having plated ito thin film is passed sequentially through into transition chamber, surge chamber, outlet lock chamber and downstream chamber.Cross
The vacuum for crossing room is 0.05Pa, and the vacuum of surge chamber is 0.05Pa, and the vacuum for exporting lock chamber is 0.003Pa, is exported
The vacuum of room is 0.5Pa, and the glass substrate for having plated ito thin film passes sequentially through transition chamber, surge chamber, outlet lock chamber and outlet
The operating rate of room is 1.8m/min, and the opening time and shut-in time for controlling gate valve is 0.05s.
4th, the glass substrate for having plated ito thin film from downstream chamber out is passed through into shock chamber, obtains ito glass.Shock chamber
Setting temperature be 5 DEG C, the length of shock chamber is 2.5mm, has plated the glass substrate of ito thin film in the indoor speed of service of quenching
For 0.6m/min.
Embodiment 2
1st, by cleaning glass substrate drying for standby.
2nd, make cleaning, the glass substrate of drying is run into the coating chamber of magnetic-controlled sputtering coating equipment, splashed using magnetic control
Penetrate.The setting temperature of coating chamber is 480 DEG C, and vacuum is 0.2Pa, glass substrate
Operating rate is 1.6m/min, and the voltage of magnetron sputtering is 350V, and power is 48Kw.
3rd, the glass substrate for having plated ito thin film is passed sequentially through into transition chamber, surge chamber, outlet lock chamber and downstream chamber.Cross
The vacuum for crossing room is 0.08Pa, and the vacuum of surge chamber is 0.08Pa, and the vacuum for exporting lock chamber is 0.009Pa, is exported
The vacuum of room is 0.03Pa, and the glass substrate for having plated ito thin film passes sequentially through transition chamber, surge chamber, outlet lock chamber and goes out
The operating rate of mouth room is 1.5m/min, and the opening time and shut-in time for controlling gate valve is 0.05s.
4th, the glass substrate for having plated ito thin film from downstream chamber out is passed through into shock chamber, obtains ito glass.Shock chamber
Setting temperature be 10 DEG C, the length of shock chamber is 3mm, has plated the glass substrate of ito thin film in the indoor speed of service of quenching
For 1.0m/min.
Comparative example 1
1st, by cleaning glass substrate drying for standby.
2nd, make cleaning, the glass substrate of drying is run into the coating chamber of magnetic-controlled sputtering coating equipment, splashed using magnetic control
Penetrate, wherein, the setting temperature of coating chamber is 600 DEG C, and vacuum is 0.3Pa, glass base
The operating rate of plate is 1.8m/min, and the voltage of magnetron sputtering is 315V, and power is 6Kw.
3rd, the glass substrate for having plated ito thin film is passed sequentially through after transition chamber, surge chamber, outlet lock chamber and outlet locking
Magnetic-controlled sputtering coating equipment is run out, ito glass is obtained.The vacuum of transition chamber is 0.05Pa, and the vacuum of surge chamber is
0.05Pa, the vacuum for exporting lock chamber are 0.003Pa, and the vacuum of downstream chamber is 0.5Pa, has plated the glass base of ito thin film
Plate runs out the operating rate of magnetic-controlled sputtering coating equipment after passing sequentially through transition chamber, surge chamber, outlet lock chamber and downstream chamber
1.8m/min is, the opening time and shut-in time for controlling gate valve is 0.05s.
Determined using pencil hardometer method the ito glass of above-described embodiment 1～3 and comparative example 1 ito thin film it is hard
Degree, test result are as shown in table 1 below.
The hardness of the ito thin film of the ito glass of 1 embodiment 1～3 of table and comparative example 1
| Embodiment and comparative example | Hardness (H) |
| Embodiment 1 | 7H |
| Embodiment 2 | 7H |
| Comparative example 1 | 3H |
Can be seen that by upper table 1, the hardness of embodiment 1 and the ito thin film of ito glass obtained in embodiment 2 is higher, by rapid
Cold mode can improve the hardness of ito thin film.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more concrete and detailed, but and
Therefore the restriction to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, some deformations and improvement can also be made, these belong to the guarantor of the present invention
Shield scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of magnetic-controlled sputtering coating equipment, it is characterised in that including the coating chamber, transition chamber, surge chamber being sequentially connected, go out
Mouth lock chamber, downstream chamber and shock chamber；
The setting temperature of the coating chamber is 380 DEG C～600 DEG C, and the setting temperature of the shock chamber is 5 DEG C～15 DEG C, described
The length of shock chamber is 0.5m～3.0m；
The linear formula row in the coating chamber, the transition chamber, the surge chamber, the outlet lock chamber and the downstream chamber
Row.
2. magnetic-controlled sputtering coating equipment according to claim 1, it is characterised in that the transition chamber, surge chamber and outlet
The setting temperature of lock chamber is 200 DEG C～550 DEG C.
3. magnetic-controlled sputtering coating equipment according to claim 1, it is characterised in that the quantity of the transition chamber be 1 or
2～4 of series connection, the length of each transition chamber is 0.9m～3.6m, and the length of the surge chamber is 0.9m～3.6m,
The length of the outlet lock chamber is 0.9m～3.6m, and the length of the downstream chamber is 0.9m～3.6m.
4. magnetic-controlled sputtering coating equipment according to claim 3, it is characterised in that the quantity of the transition chamber is series connection
2 or 4.
5. the magnetic-controlled sputtering coating equipment according to any one of Claims 1 to 4, it is characterised in that the magnetron sputtering
By a control door between the adjacent chamber of the surge chamber of filming equipment, outlet lock chamber, downstream chamber and shock chamber each two
Valve connects, the connection and closing between the two neighboring chamber of switch control rule of each control gate valve.
6. a kind of preparation method of ito glass, it is characterised in that comprise the steps：
Glass substrate is provided；
The glass substrate is made to run into the coating chamber of the magnetic-controlled sputtering coating equipment described in claim 1, using magnetic control
The plated film mode of sputtering prepares ito thin film on the glass substrate, wherein, the setting temperature of the coating chamber is 380 DEG C
～600 DEG C；
The glass substrate for having plated ito thin film is passed sequentially through into the transition chamber, surge chamber, outlet lock chamber and downstream chamber；
And
The glass substrate for having plated ito thin film from the downstream chamber out is passed through into the shock chamber, the ITO glass is obtained
Glass, the setting temperature of the shock chamber is 5 DEG C～15 DEG C, and the length of the shock chamber is 0.5m～3.0m, has plated ito thin film
The glass substrate is 0.2m/min～2.5m/min in the indoor speed of service of the quenching.
7. the preparation method of ito glass according to claim 6, it is characterised in that the transition chamber, surge chamber and outlet
The setting temperature of lock chamber is 200 DEG C～550 DEG C.
8. the preparation method of ito glass according to claim 6, it is characterised in that the quantity of the transition chamber be 1 or
2～4 of series connection, the length of each transition chamber is 0.9m～3.6m, and the length of the surge chamber is 0.9m～3.6m,
The length of the outlet lock chamber is 0.9m～3.6m, and the length of the downstream chamber is 0.9m～3.6m, and the glass substrate exists
The speed of service of the transition chamber, surge chamber, outlet locking interior and downstream chamber is 0.6m/min～2.5m/min.
9. the preparation method of ito glass according to claim 8, it is characterised in that the quantity of the transition chamber is series connection
2 or 4.
10. the preparation method of the ito glass according to any one of claim 6～9, it is characterised in that the magnetic control splashes
Penetrate between the adjacent chamber of the surge chamber of filming equipment, outlet lock chamber, downstream chamber and shock chamber each two by a control
Gate valve connects, the connection and closing between the two neighboring chamber of switch control rule of each control gate valve, each described control
The opening time and shut-in time of gate valve processed is 0.01s～0.2s.
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| CN1189464A (en) * | 1998-01-14 | 1998-08-05 | 中国航天工业总公司第五研究院第五一○研究所 | Method for preparing heat-insulating and frost-removing coated glass |
| JP2002047559A (en) * | 2000-07-31 | 2002-02-15 | Sumitomo Heavy Ind Ltd | Ito film, and film deposition method thereof |
| CN102312208A (en) * | 2011-09-30 | 2012-01-11 | 芜湖长信科技股份有限公司 | Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering |
| CN103147053A (en) * | 2012-12-14 | 2013-06-12 | 广东志成冠军集团有限公司 | Multi-functional continuous magneto-controlled sputter coating device |
| CN103820762A (en) * | 2014-02-20 | 2014-05-28 | 江西沃格光电股份有限公司 | Magnetron sputtering coating system |
| CN103938168A (en) * | 2014-04-08 | 2014-07-23 | 江西沃格光电股份有限公司 | Magnetron sputtering coating system |
| CN204455280U (en) * | 2015-01-12 | 2015-07-08 | 宜昌南玻显示器件有限公司 | Magnetic-controlled sputtering coating equipment |
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