CN104584238A - Light receiving/emitting element and sensor device using same - Google Patents

Light receiving/emitting element and sensor device using same Download PDF

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Publication number
CN104584238A
CN104584238A CN201380043214.0A CN201380043214A CN104584238A CN 104584238 A CN104584238 A CN 104584238A CN 201380043214 A CN201380043214 A CN 201380043214A CN 104584238 A CN104584238 A CN 104584238A
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Prior art keywords
light
photo detector
emitting component
electrode pad
substrate
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CN201380043214.0A
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CN104584238B (en
Inventor
藤本直树
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Kyocera Corp
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Kyocera Corp
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Priority to CN201710474413.7A priority Critical patent/CN107369728B/en
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Abstract

A light receiving/emitting element (1) of the present invention is provided with: a substrate (2); a light emitting element (3a) that is formed on the upper surface of the substrate (2); a light receiving element (3b) that is formed in the upper surface of the substrate (2); a light emitting element-side first electrode pad (31B); and a metal lump (34) that is joined to the light emitting element-side first electrode pad (31B). The light emitting element-side first electrode pad (31B) is arranged on the upper surface of the substrate (2) with an insulating layer interposed therebetween, so that the metal lump (34) blocks the light emitted from the light emitting element (3a) and propagating toward the light receiving element (3b).

Description

Light-emitting element and use the sensor device of this light-emitting element
Technical field
The present invention relates to a kind of photo detector and light-emitting component configuration light-emitting element on the same substrate and use the sensor device of this light-emitting element.
Background technology
All the time, propose various following sensor device, it is by irradiating light from light-emitting component to shone thing, and by photo detector accept for normal reflection light from the light to shone thing incidence and diffuse, thus the characteristic of shone thing is detected.This sensor device is utilized, such as, at optical chopper in field widely, optical coupler, remote control unit, IrDA (Infrared DataAssociation) communication equipment, optical fiber communication device and document size sensor etc. relate in many-sided application and being used.
Such as, described in Japanese Unexamined Patent Publication 2007-201360 publication, use and configure light-emitting component and photo detector respectively on the same substrate, and be provided with the sensor device of the shading wall separated in light area and light-emitting zone.
But in such sensor device, the light that light-emitting component sends irradiates directly to photo detector, therefore there is the problem points being difficult to the sensing detection performance improving sensor device.
Summary of the invention
The object of the present invention is to provide the high light-emitting element of a kind of sensing detection performance and use the sensor device of this light-emitting element.
Light-emitting element of the present invention possesses: the substrate be made up of a conductive-type semiconductor; The light-emitting component of multiple semiconductor layers of a conductive-type semiconductor layer and inverse conductivity type semiconductor layer is drawn together in the upper surface upper strata stacked package of this substrate; There is in the upper surface side of described substrate the photo detector of the inverse conductivity type semiconductor region of the impurity being doped with inverse conductivity type; With at least one at least one electrode pad be connected respectively of described substrate, a described conductive-type semiconductor layer, described inverse conductivity type semiconductor layer and described inverse conductivity type semiconductor region; Be engaged in the metal derby of the upper surface of this electrode pad.When described electrode pad is connected with described substrate, electrode pad described in this at least one blocks with described metal derby and sends and the mode of light towards described photo detector from described light-emitting component, be configured in the upper surface of the described substrate between described light-emitting component and described photo detector, at described electrode pad and a described conductive-type semiconductor layer, when described inverse conductivity type semiconductor layer or described inverse conductivity type semiconductor region connect, electrode pad described in this at least one blocks with described metal derby and sends and the mode of light towards described photo detector from described light-emitting component, the upper surface of described substrate is configured in via insulating barrier.
Sensor device of the present invention is the sensor device employing above-mentioned light-emitting element, light is irradiated to shone thing from described light-emitting component, according to the output current from described photo detector, at least one in the positional information of described shone thing, range information and concentration information is detected, should export according to the reverberation from this shone thing from output current of described photo detector.
Accompanying drawing explanation
Fig. 1 (a) is the vertical view of an example of the execution mode representing light-emitting element of the present invention.Fig. 1 (b) is the diagrammatic cross-sectional view of the 1I-1I line along Fig. 1 (a).
Fig. 2 (a) is the cutaway view of the light-emitting component of the light-emitting element shown in pie graph 1.Fig. 2 (b) is the cutaway view of the photo detector of the light-emitting element shown in pie graph 1.
Fig. 3 is the diagrammatic cross-sectional view of an example of the execution mode representing the sensor device employing the light-emitting element shown in Fig. 1.
Fig. 4 is the major part vertical view of the first variation representing the light-emitting element shown in Fig. 1.
Fig. 5 is the major part vertical view of the second variation representing the light-emitting element shown in Fig. 1.
Fig. 6 (a) is the major part vertical view of the 3rd variation representing the light-emitting element shown in Fig. 1.Fig. 6 (b) is the major part vertical view of the 4th variation representing the light-emitting element shown in Fig. 1.
Fig. 7 is the major part vertical view of the 5th variation representing the light-emitting element shown in Fig. 1.
Embodiment
Below, with reference to accompanying drawing to light-emitting element of the present invention and use the example of the execution mode of the sensor device of this light-emitting element to be described.It should be noted that, following example only illustrates embodiments of the present invention, and the present invention is not limited to these execution modes.
(light-emitting component element)
Fig. 1 (a) and the light-emitting element 1 shown in (b) are assembled in the image processing system such as photocopier, printer, the sensor device detected as the positional information to the shone thing such as toner, medium, range information or concentration information etc. and play function.
Light-emitting element 1 has substrate 2, is configured at light-emitting component 3a and the photo detector 3b of the upper surface of substrate 2.
Substrate 2 is made up of the semi-conducting material of a conductivity type.The impurity concentration of one conductivity type without particular limitation of.In the present example, for silicon (Si) substrate, be used as the impurity of a conductivity type with 1 × 10 17~ 2 × 10 17atoms/cm 3concentration contain silicon (Si) substrate of the N-shaped of phosphorus (P).As the impurity of N-shaped, beyond dephosphorization (P), can enumerate such as nitrogen (N), arsenic (As), antimony (Sb) and bismuth (Bi) etc., doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3.Below, N-shaped is a conductivity type, and p-type is inverse conductivity type.
On the upper surface of substrate 2, be configured with light-emitting component 3a, and be configured with photo detector 3b accordingly with light-emitting component 3a.Light-emitting component 3a plays function as irradiating the light source of light to shone thing, and the light sent from light-emitting component 3a is reflected by shone thing and is incident to photo detector 3b.Photo detector 3b plays function as the optical detection part detected the incidence of light.
As shown in Fig. 2 (a), light-emitting component 3a is formed to be laminated with the mode of multiple semiconductor layer on the upper surface of substrate 2.
First, on the upper surface of substrate 2, be formed with the resilient coating 30a that substrate 2 is cushioned with the difference of lattice constant of semiconductor layer (the n-contact layer 30b be described afterwards for it in the case of the present example) of the upper surface being laminated in substrate 2.By resilient coating 30a buffer substrate 2 and the difference of lattice constant of semiconductor layer of upper surface being formed at substrate 2, there is the lattice defects such as the lattice deformation produced between minimizing substrate 2 and semiconductor layer thus, and then reduce the lattice defect of semiconductor layer entirety or the function of crystal defect that are formed at the upper surface of substrate 2.
The resilient coating 30a of this example is made up of the GaAs (GaAs) not containing impurity, and its thickness is about 2 ~ 3 μm.It should be noted that, when substrate 2 and the difference of lattice constant of semiconductor layer of the upper surface being laminated in substrate 2 are little, resilient coating 30a can be omitted.
The upper surface of resilient coating 30a is formed with n-contact layer 30b.In n-contact layer 30b, doped with the silicon (Si) or selenium (Se) etc. as N-shaped impurity in GaAs (GaAs), doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3left and right, and its thickness is about 0.8 ~ 1 μm.
In the present example, as N-shaped impurity, with 1 × 10 18~ 2 × 10 18atoms/cm 3doping content doped with silicon (Si).A part for the upper surface of n-contact layer 30b is exposed, and at the part place that this exposes via light-emitting component side first electrode 31a (the first electrode 31a), is connected with light-emitting component side first electrode pad 31A (the first electrode pad 31A).First electrode pad 31A is electrically connected with external power source via metal derby 34.In the present example, be connected with external power source by the first electrode pad 31A by the wire bond of gold (Au) line, the metal derby 34 of this example is gold (Au) projection engaged with the first electrode pad 31A.Only describe gold (Au) projection and the metal derby 34 of wire bond in the drawings, in order to easy omission wire (being also identical in other accompanying drawings be described afterwards).Also can replace gold (Au) line and select the wire such as aluminium (Al) line, copper (Cu) line.In addition, in the present example, can wire bond be replaced, by soft solder etc., electric distribution be engaged with the first electrode pad 31A, golden column-like projection block can also be formed on the upper surface of the first electrode pad 31A, by soft solder etc., electric distribution be engaged with this gold (Au) column-like projection block.Metal derby 34 in this situation is equivalent to the joint material of soft solder, gold (Au) column-like projection block and soft solder respectively.N-contact layer 30b has the function reduced with the contact resistance of the first electrode 31a being connected to n-contact layer 30b.
It should be noted that, be preferably, the thickness in the normal direction of substrate 2 of metal derby 34 is set as thicker than the thickness of light-emitting component 3a.Thicker than the thickness of light-emitting component 3a by the thickness of metal derby 34 is set as, the possibility that the light that reduction light-emitting component 3a sends thus is irradiated by the upper direction photo detector 3b of metal derby 34.
First electrode 31a and the first electrode pad 31A uses such as gold (Au) antimony (Sb) alloy, gold (Au) germanium (Ge) alloy or Ni class alloy etc., and its thickness is formed as about 0.5 ~ 5 μm.Further, owing to being configured on the insulating barrier 8 that formed in the mode of the upper surface covering n-contact layer 30b from the upper surface of substrate 2, therefore with substrate 2 and n-contact layer 30b beyond semiconductor layer insulate.
Insulating barrier 8 is such as by silicon nitride (SiNx) or silica (SiO 2) etc. the formation such as the organic insulating film such as inorganic insulating membrane, polyimides, its thickness is about 0.1 ~ 1 μm.
Be formed with N-shaped coating layer 30c at the upper surface of n-contact layer 30b, the active layer 30d be described afterwards has the function of enclosed voids.In N-shaped coating layer 30c, doped with the silicon (Si) or selenium (Se) etc. as N-shaped impurity in aluminum gallium arsenide (AlGaAs), doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3left and right, and the thickness of this N-shaped coating layer 30c is about 0.2 ~ 0.5 μm.In the present example, as N-shaped impurity, with 1 × 10 17~ 5 × 10 17atoms/cm 3doping content doped silicon (Si).
Be formed with active layer 30d at the upper surface of N-shaped coating layer 30c, concentrate as making the charge carrier such as electronics, hole and pass through again combine send light luminescent layer and play function.Active layer 30d is aluminum gallium arsenide (AlGaAs) free from foreign meter, and its thickness is about 0.1 ~ 0.5 μm.It should be noted that, the active layer 30d of this example is layer free from foreign meter, but also can for containing the p-type active layer of p-type impurity, the N-shaped active layer containing N-shaped impurity.But, need to make the band gap of active layer 30d than N-shaped coating layer 30c and the band gap of p-type coating layer 30e that is described afterwards little.
Be formed with p-type coating layer 30e at the upper surface of active layer 30d, make active layer 30d have the function of closed electronics thus.In p-type coating layer 30e, doped with as the zinc (Zn) of p-type impurity, magnesium (Mg) or carbon (C) etc. in aluminum gallium arsenide (AlGaAs), doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3left and right, and the thickness of this p-type coating layer 30e is about 0.2 ~ 0.5 μm.In the present example, as p-type impurity, with 1 × 10 19~ 5 × 10 20atoms/cm 3doping content magnesium-doped (Mg).
P type contact layer 30f is formed at the upper surface of p-type coating layer 30e.In P type contact layer 30f, doped with as the zinc (Zn) of p-type impurity, magnesium (Mg) or carbon (C) etc. in aluminum gallium arsenide (AlGaAs), doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3left and right, and the thickness of this P type contact layer 30f is about 0.2 ~ 0.5 μm.
P type contact layer 30f, via light-emitting component side second electrode 31b (the second electrode 31b), is connected with light-emitting component side second electrode pad 31B (the second electrode pad 31B).Second electrode pad 31B is identical with light-emitting component first lateral electrode liner 31A, is electrically connected with external power source via metal derby 34.Method of attachment is identical with the situation of the first electrode pad 31A with the change of juncture.P type contact layer 30f has the function reduced with the contact resistance of the light-emitting component side second electrode wiring 31b being connected to P type contact layer 30f.
It should be noted that, also can form the cover layer of the function with the oxidation suppressing P type contact layer 30f at the upper surface of P type contact layer 30f.Cover layer is such as formed by the GaAs (GaAs) not containing impurity, and its thickness is only required to be about 0.01 ~ 0.03 μm.
Second electrode 31b and the second electrode pad 31B is such as by being combined with gold (Au) or aluminium (Al) and being formed as AuNi, AuCr, AuTi or AlCr alloy etc. being close to the nickel (Ni) of layer, chromium (Cr) or titanium (Ti), and its thickness is about 0.5 ~ 5 μm.Further, owing to being configured on the insulating barrier 8 that formed in the mode of the upper surface of the upper surface blanket p-type contact layer 30f from substrate 2, therefore with substrate 2 and P type contact layer 30f beyond semiconductor layer electric insulation.
For the light-emitting component 3a formed like this, by applying bias voltage between the first electrode pad 31A and the second electrode pad 31B, thus active layer 30d is luminous and play function as light source.
As shown in Fig. 2 (b), photo detector 3b connects by arranging p-type semiconductor district 32 at the upper surface of substrate 2 and forming pn with the substrate 2 of N-shaped and forms.P-type semiconductor district 32 is by diffused p-type impurity and being formed in high concentration on a substrate 2.As p-type impurity, can enumerate such as zinc (Zn), magnesium (Mg), carbon (C), boron (B), indium (In) or selenium (Se) etc., doping content is 1 × 10 16~ 1 × 10 20atoms/cm 3.In the present example, take the thickness in p-type semiconductor district 32 as the mode of about 0.5 ~ 3 μm, diffused with boron (B) is using as p-type impurity.
P-type semiconductor district 32 is electrically connected with photo detector side first electrode pad 33A (third electrode liner 33A) via photo detector side first electrode 33a (third electrode 33a), as the substrate 2 of n-type semiconductor being electrically connected with photo detector side second electrode pad 33B (the 4th electrode pad 33B).
Third electrode 33a and third electrode liner 33A is configured at the upper surface of substrate 2 via insulating barrier 8, therefore with substrate 2 electric insulation.On the other hand, the 4th electrode pad 33B is configured at the upper surface of substrate 2.
Third electrode 33a, third electrode liner 33A, the 4th electrode pad 33B use such as gold (Au) antimony (Sb) alloy, gold (Au) germanium (Ge) alloy or Ni class alloy etc., and its thickness is formed as about 0.5 ~ 5 μm.
For the photo detector 3b formed like this, when light is incident to p-type semiconductor district 32, because photoelectric effect produces photoelectric current, obtains this photoelectric current via third electrode liner 33A, play function as optical detection part thus.It should be noted that, if apply reverse blas between third electrode liner 33A and the 4th electrode pad 33B, then the light detection sensitivity of photo detector 3b improves, so preferably.
Here, the configuration of the first electrode pad 31A, the second electrode pad 31B, third electrode liner 33A and the 4th electrode pad 33B is described.
In the case of the present example, the upper surface of the substrate 2 between light-emitting component 3a and photo detector 3b is configured with the second electrode pad 31B via insulating barrier 8.Further, the first electrode pad 31A is configured to clamp light-emitting component 3a with the second electrode pad 31B, and third electrode liner 33A and the 4th electrode pad 33B is configured to clamp photo detector 3b with the second electrode pad 31B.First electrode pad 31A and third electrode liner 33A is configured at the upper surface of substrate 2 via insulating barrier 8, the 4th electrode pad 33B is configured at the upper surface of substrate 2.
By the second electrode pad 31B to be configured at the upper surface of the substrate 2 between light-emitting component 3a and photo detector 3b via insulating barrier 8, to send from light-emitting component 3a thus and the metal derby 34 being engaged in the upper surface of the second electrode pad 31B towards the light of photo detector 3b blocks.Therefore, it is possible to the light direct irradiation that suppression light-emitting component 3a sends is to photo detector 3b, thus the high light-emitting element of sensing detection performance can be realized.
It should be noted that, in the present example, the upper surface of the substrate 2 between light-emitting component 3a and photo detector 3b configures the second electrode pad 31B via insulating barrier 8, but also can configure any one in the first electrode 31a, third electrode liner 33A or the 4th electrode pad 33B.When configuration the 4th electrode pad 33B, note the upper surface not being configured at substrate 2 via insulating barrier 8.
In addition, being positioned at light-emitting component 3a on substrate and photo detector 3b and both can being one, also can be multiple.
(manufacture method of light-emitting element)
Next, the example of the manufacture method of light-emitting element 1 is shown.
First, the substrate 2 doped with N-shaped impurity in silicon (Si) is prepared.Further, use thermal oxidation method, formed by silica (SiO on substrate 2 2) the diffused component film S (not shown) that forms.
After diffusion block film S applying photoresist, lithographically desired pattern is exposed, develop, by wet etching, spreading in block film S the peristome Sa (not shown) formed for the formation of p-type semiconductor district 32.Peristome Sa might not need through diffusion block film S.
Then, the poly-boron film (PBF:Poly Boron film) of coating on diffusion block film S.Then, use thermal diffusion method, make boron (B) contained in poly-boron film (PBF) via the diffusion inside of peristome Sa to substrate 2 spreading block film S, form p-type semiconductor district 32 thus.Now, such as, the thickness gathering boron film (PBF) is set to 0.1 ~ 1 μm, containing nitrogen (N 2) and oxygen (O 2) environment in carry out thermal diffusion with the temperature of 700 ~ 1200 DEG C.Afterwards, diffusion block film S is removed.
Next, by heat-treating substrate 2 in the reacting furnace of MOCVD (Metal-organic Chemical Vapor Deposition) device, remove the natural oxide film being formed at the surface of substrate 2.This heat treatment such as carries out about 10 minutes at the temperature of 1000 DEG C.
Next, use mocvd method, stack gradually each semiconductor layer (resilient coating 30a, n-contact layer 30b, N-shaped coating layer 30c, active layer 30d, p-type coating layer 30e, P type contact layer 30f) forming light-emitting component 3a on a substrate 2.Further, after stacked semiconductor layer L (not shown) applying photoresist, lithographically desired pattern is exposed, developing, light-emitting component 3a is formed by wet etching.It should be noted that, repeatedly etch, expose with a part for the upper surface making n-contact layer 30b.Afterwards, photoresist is removed.
Next, use thermal oxidation method, sputtering method or plasma CVD method etc., form insulating barrier 8 in the mode of the upper surface of the exposed surface of covering luminous element 3a and substrate 2 (comprising p-type semiconductor district 32).Then, insulating barrier 8 applies photoresist, after lithographically desired pattern being exposed, developing, by wet etching, insulating barrier 8 forms the opening being used for the first electrode 31a be described afterwards, the second electrode 31b and third electrode 33a to be connected with n-contact layer 30b, P type contact layer 30f and p-type semiconductor district 32 respectively.Afterwards, photoresist is removed.
Next, insulating barrier 8 applies photoresist, after lithographically desired pattern being exposed, developing, by electrical resistance heating, sputtering method etc., form the alloy film for the formation of the first electrode 31a, the first electrode pad 31A, third electrode 33a, third electrode liner 33A and the 4th electrode pad 33B.Then, use stripping method, remove photoresist, and the first electrode 31a, the first electrode pad 31A, third electrode 33a, third electrode liner 33A and the 4th electrode pad 33B are formed as desired shape.In the same manner, the second electrode 31b and the second electrode pad 33B is also formed respectively by identical operation.
(sensor device)
Next, the sensor device 100 possessing light-emitting element 1 is described.Below, enumerate light-emitting element 1 is applied in image processing system, be that example is described to the situation of the sensor device that the position of the toner T (shone thing) be attached on intermediate transfer belt V is detected.
As shown in Figure 3, the sensor device 100 of this example is configured to, and the face being formed with light-emitting component 3a and photo detector 3b of light-emitting element 1 is opposed with intermediate transfer belt V.Further, light is irradiated from light-emitting component 3a to the toner T intermediate transfer belt V or intermediate transfer belt V.In the present example, configure prism P1 above light-emitting component 3a, and configure prism P2 above photo detector 3b, the light sent from light-emitting component 3a is reflected by prism P1 and incident to the toner T intermediate transfer belt V or intermediate transfer belt V.Further, the normal reflection light L2 for this incident light L1 is reflected by prism P2, is accepted by photo detector 3b.In photo detector 3b, produce photoelectric current according to the intensity of the light accepted, detect this photoelectric current via third electrode 33a etc. by external device (ED).
In the sensor device 100 of this example, as mentioned above, can the photoelectric current corresponding with the intensity of the normal reflection light from intermediate transfer belt V or toner T be detected.Therefore, such as, according to the photocurrent values detected by photo detector 3b, can detect the position of toner T.It should be noted that, the intensity of normal reflection light is also corresponding with the concentration of toner T, therefore according to the size of the photoelectric current produced, can also detect the concentration of toner T.In the same manner, the intensity of normal reflection light is also corresponding to the distance of toner T with from light-emitting element arrays 3, therefore according to the size of the photoelectric current produced, can also detect the distance of light-emitting element arrays 3 and toner T.
According to the sensor device 100 of this example, the above-mentioned effect that light-emitting element 1 has can be played.
Above, show the example of the specific embodiment of the present invention, but the present invention is not limited thereto, can various change be carried out without departing from the spirit and scope of the invention.
Such as, the first variation is as shown in Figure 4 such, also can be in the following way, namely, second electrode pad 31B configures with the one end on the limit opposed with light-emitting component 3a with the limit opposed with photo detector 3b and photo detector 3b that link light-emitting component 3a line segment 50a each other and the mode that links other end line segment 50b each other crossing, and is bonded to multiple metal derby 34 (be two in the situation of this variation).
By adopting such structure, light direct irradiation that light-emitting component 3a sends can be suppressed further to photo detector 3b, thus the high light-emitting element of sensing detection performance can be realized.
It should be noted that, when light-emitting component 3a and photo detector 3b is multiple, when observing from photo detector 3b and light-emitting component 3a side respectively, only line segment 50a and line segment 50b need be made by one end of the light-emitting component 3a and photo detector 3b that are positioned at two ends and the other end.In other words, light-emitting component 3a and photo detector 3b must be configured in comprise line segment 50a and line segment 50b respectively straight line between.
In addition, the second variation is as shown in Figure 5 such, also can be in the following way, namely, second electrode pad 31B is along being configured with multiple between light-emitting component 3a and photo detector 3b, the part each other that multiple second electrode pad 31B is adjacent when observing photo detector 3b side from light-emitting component 3a side is overlapping, the the second electrode pad 31B being positioned at end positions is respectively with the one end on the limit opposed with light-emitting component 3a with the limit opposed with photo detector 3b and photo detector 3b that link light-emitting component 3a line segment 50a each other or link the crossing mode of other end line segment 50b each other and configure, multiple second electrode pad 31B is bonded at least one metal derby 34 respectively.It should be noted that, refer to when observing photo detector 3b side from light-emitting component 3a side, along when observing towards the direction of photo detector 3b from light-emitting component 3a in side-looking is observed.
By adopting such structure, light direct irradiation that light-emitting component 3a sends can be suppressed further to photo detector 3b, thus the high light-emitting element of sensing detection performance can be realized.
It should be noted that, in the second variation, only form multiple electrode pad by the second electrode pad 31B, but also can be the first electrode pad 31A, third electrode liner 33A and the 4th electrode pad 33B, also can combine these electrode pads in any way, only need the quantity of suitably each electrode pad of setting.
Further, the 3rd variation as shown in Fig. 6 (a), (b), the 4th variation, the part each other that multiple metal derby 34 also can be adjacent when observing photo detector 3b side from light-emitting component 3a side is overlapping.
By adopting such structure, the metal derby 34 seamless unoccupied place configuration each other when observing photo detector 3b side from light-emitting component 3a side, the light direct irradiation suppressing light-emitting component 3a to send therefore, it is possible to further to photo detector 3b, thus can realize the high light-emitting element of sensing detection performance.
This be due to, in the light sent from light-emitting component 3a, by photo detector 3b may be exposed to by the light of the top in the region of line segment 50a and line segment 50b clamping, if therefore block the light of the top by this this region, then the light sent from light-emitting component 3a can not expose to photo detector 3b.
In addition, the 5th variation is as shown in Figure 7 such, also can in the following way, that is, light-emitting element 1 has: substrate 2, and it possesses light-emitting component 3a and photo detector 3b at the upper surface of wiring substrate 40; Outer wall 4 on frame, it configures in the mode of surrounding substrate 2; Shading wall 5, it is positioned at the inner side of outer wall 4, and the inner space 4a of outer wall 4 is divided into space corresponding with light-emitting component 3a and photo detector 3b respectively; Upper wall 7, its covered substrate 2, and the photo detector side lens 6a corresponding respectively with light-emitting component 3a and photo detector 3b and light-emitting component side lens 6b is supported.
Further, shading wall 5 can have the lower surface 5c opposed with substrate 2, and the interval of the lower surface 5c of substrate 2 and shading wall 5 is less than the thickness of the normal direction of the light-emitting component side first electrode pad 31B of metal derby 34.
Wiring substrate 40 is electrically connected with substrate 2 and external device (ED) respectively, as applying bias voltage to being formed at the light-emitting component 3a of substrate 2 and photo detector 3b, carrying out the wiring substrate of the transmitting-receiving of the signal of telecommunication and play function between substrate 2 and external device (ED).
Outer wall 4, to surround the mode of substrate 2, is connected with the upper surface of wiring substrate 40 via not shown adhesive 9.Further, have the light that suppresses light-emitting component 3a to send to towards the direction scattering beyond the direction of shone thing, suppress that the light beyond being reflected by shone thing is incident to photo detector 3b, protection wiring substrate 40 and substrate 2 be by the function of external environment influence.
Outer wall 4 is formed by the superengineering plastics such as engineering plastics, liquid crystal polymer such as the general-purpose plastics such as acrylic resin (PP), polystyrene resin (PS), Corvic (PVC), polyethylene terephthalate resin (PET), acrylonitrile/butadiene/styrene resin (ABS), polyamide (PA), polycarbonate resin (PC) and the metal material such as aluminium (Al), titanium (Ti).
It should be noted that, the depth of outer wall 4 and width dimensions both can be identical with the depth of substrate 2 and width dimensions, also can be different.The depth of outer wall 4 and width dimensions are only required to be the size of at least covering luminous element 3a and photo detector 3b.
Shading wall 5 is configured in the inner side of outer wall 4 in the mode inner space 4a of outer wall 4 being separated into the space corresponding with light-emitting component 3a and photo detector 3b.Configure in the mode inner space 4a of outer wall 4 being separated into the space corresponding with light-emitting component 3a and photo detector 3b and refer to, light-emitting element 1 is configured to, when observing wiring substrate 40 from light-emitting element 1 side, in the space of the side formed by shading wall 5 and outer wall 4, have light-emitting component 3a, in the space of the opposing party, have photo detector 3b.
Shading wall 5 has the light suppressing light-emitting component 3a to send and not to be reflected by shone thing and to the function of photo detector 3b incidence.
Shading wall 5 configures in the mode do not contacted with wiring substrate 40 and substrate 2.By such configuration, even if light-emitting element 1 produces heat, accepts heat from external environment condition because of driving, shading wall 5 is caused to make size extend because of thermal expansion, also can not abut with the substrate 2 being formed with light-emitting component 3a and photo detector 3b, therefore, it is possible to maintain the position relationship of light-emitting component 3a and photo detector 3b, thus sensing detection performance can be improved.
The lower surface 5c that shading wall 5 has the light-emitting component side shading surface 5a (first surface 5a) being positioned at light-emitting component 3a side, the photo detector side shading surface 5b (second 5b) being positioned at photo detector 3b side, is connected with light-emitting component side shading surface 5a and photo detector side shading surface 5b.
As long as the inner space 4a of outer wall 4 can be separated into the space corresponding with light-emitting component 3a side and photo detector 3b side by first surface 5a and second 5b of the 5th variation, then can have any shape.In the 5th variation, along the normal direction of the upper surface of substrate 2 and configure between light-emitting component 3a and photo detector 3b, and abut with outer wall 4.The length be set as more than the length of at least light-emitting component 3a is needed along the length between light-emitting component 3a and photo detector 3b.Otherwise the light meeting direct irradiation that light-emitting component 3a sends is to the space of photo detector 3b side.
Shading wall 5 can use the material identical with outer wall 4.
Upper wall 7 configures in the mode covering wiring substrate 40 and substrate 2.The upper wall 7 of the 5th variation configures in the mode abutted with the upper end of outer wall 4.Further, in the position corresponding with light-emitting component 3a and photo detector 3b, there is through hole 7a, 7b.Upper wall 7 play protective substrate 2 and light-emitting element arrays 3 by external environment influence function and as lens 6a, 6b of being described afterwards supporting mass and play function.
Upper wall 7 can use the material identical with outer wall 4 and shading wall 5.
It should be noted that, the outer wall 4 of the 5th variation, shading wall 5 and upper wall 7 are formed by injection molding forming by polycarbonate resin (PC).
Light-emitting component side lens 6a and photo detector side lens 6b is corresponding with through hole 7a, 7b of upper wall 7 to be configured, and the light had respectively light-emitting component 3a sends carries out the function of optically focused, the light reflected by shone thing carried out to the function of optically focused.It should be noted that, in this manual, sometimes light-emitting component side lens 6a and photo detector side lens 6b is only called lens 6a and 6b.By having these lens 6a and 6b, even if also sensing detection performance can be improved when light-emitting element 1 and the distance of shone thing are elongated.
The material of lens 6a and 6b can enumerate plastics or sapphire and the unorganic glass etc. such as the heat-curing resins such as silicone resin, polyurethane resin and epoxy resin or the thermoplastic resin such as polycarbonate resin and acrylic resin.
Lens 6a and 6b of the 5th variation is the cylindrical lens formed by silicone resin, has curvature with on the long side direction of through hole 7a and through hole 7b, namely orthogonal along the direction of the row of photo detector 3a and the row of light-emitting component 3b that are formed at light-emitting element arrays 3 direction.Lens 6a and 6b only need be implemented by organic bonds etc. such as silicone resins to the installation of upper wall 7.
In the present example, the straight line at the center of the straight line linking the center of the illuminating part of light-emitting component 3a and the light accepting part linking photo detector 3b is roughly consistent respectively with the optical axis of lens 6a and 6b, and optical axis and the upper surface from light-emitting element arrays 3 normal direction is upward roughly consistent.By adopting such structure, the light sent from light-emitting component 3a can be irradiated to shone thing with high illumination, illumination when light that light-emitting component 3a sends is reflected by shone thing and accepted by photo detector 3b can be improved, therefore, it is possible to realize highly sensitive, that namely sensing detection performance is high light-emitting element 1.
Here, the center of light accepting part refers to the center from the p-type semiconductor district 32a during top view substrate 2 of 32a side, p-type semiconductor district.In the same manner, the center of illuminating part refers to the center from the active layer 30d during top view substrate 2 of P type contact layer 30f side.Owing to being laminated with p-type coating layer 30e and P type contact layer 30f etc. at the upper surface of active layer 30d, the center of active layer 30d therefore cannot be observed directly.Therefore, the center of P type contact layer 30f can be considered as the center of active layer 30d.This be due to, as mentioned above, each layer of semiconductor layer is very thin, even if therefore carry out separately for the formation of the etching of light-emitting device array 3a and the etching of exposing for a part for the upper surface making n-contact layer 30b, from P type contact layer 30f side top perspective, the center of P type contact layer 30f is roughly consistent with the center of active layer 30d.
It should be noted that, lens 6a and 6b is cylindrical lens, but also can be the planoconvex spotlight corresponding respectively with photo detector 3a and light-emitting component 3b.
It should be noted that, in the 5th variation, to there is upper wall 7, lens 6a and 6b, but in the situation etc. that light-emitting element 1 and shone thing are closely arranged, upper wall 7, lens 6a and 6b also can not be set.
Next, the manufacture method of the 5th variation is briefly described.
Except above-mentioned light-emitting manufacturing method, manufactured by following operation.
The wiring substrate 40 of the 5th variation is made up of pottery, and manufactures via following operation.First, ceramic printed-circuit board is prepared.
Next, ceramic printed-circuit board prints formation first electrode 31a, the first electrode pad 31A, the second electrode 31b, the second electrode pad 31B, third electrode 33a, third electrode liner 33A and the 4th electrode pad 33B and the metal paste of electric distribution for being connected respectively by these electrodes and be connected with external device (ED).As the metal paste forming electric distribution, the metal paste containing metals such as such as tungsten (W), molybdenum (Mo), manganese (Mn) and copper (Cu) can be enumerated.
It should be noted that, wiring substrate 40 also can be made up of resin.The manufacture method of wiring substrate 40 now can consider such as following method.First, the front body of thermohardening type resin is prepared.Next, to be configured in by the conductor terminal be made up of metal material between front body and conductor terminal to be embedded in the stacked multiple front body of mode of front body, described conductor terminal forms the first electrode 31a, the first electrode pad 31A, the second electrode 31b, the second electrode pad 31B, third electrode 33a, third electrode liner 33A and the 4th electrode pad 33B and for the electric distribution connected respectively by these electrodes and be connected with external device (ED).The formation material of this conductor terminal can enumerate the metal materials such as such as copper (Cu), silver (Ag), aluminium (Al), iron (Fe)-nickel (Ni)-cobalt (Co) alloy and iron (Fe)-nickel (Ni) alloy.Further, by making their hot curings, thus wiring substrate 40 is completed.
At the upper surface placement substrate 2 of ready like this wiring substrate 40.When wiring substrate 40 being electrically connected with substrate 2 by wire bond, only by the adhesive such as epoxy resin, silver paste, wiring substrate 40 need be engaged with substrate 2, when engaged by flip-over type connect, only need carry out being electrically connected by the combination of the solders such as soft solder, silver solder and copper solder, golden column-like projection block and soft solder or anisotropic conductive film etc. simultaneously.
Then, lens 6a and 6b be bonded in by silicone resin etc. the parts that outer wall 4, shading wall 5 and upper wall 7 be integrally formed in advance, use the resinae adhesive such as epoxy resin and silicone resin or the base materials such as polyester, nonwoven fabrics, acrylic foam, polyimides, polyvinyl chloride (PVC) or aluminium foil are used and be coated with the two-sided tape of the adhesive of acrylic compounds sticker, rubber-like sticker or silicone sticker etc. by the upper surface of this adhering components in substrate 2.
Description of reference numerals
1 light-emitting element
2 substrates
3a light-emitting component
3b photo detector
4 outer walls
4a inner space
5 shading walls
5a light-emitting component side shading surface
5b photo detector side shading surface
5c lower surface
6a light-emitting component side lens
6b photo detector side lens
7 upper walls
8 insulating barriers
9 adhesives
30a resilient coating
30b n-contact layer
30c N-shaped coating layer
30d active layer
30e p-type coating layer
30f P type contact layer
31A light-emitting component side first electrode pad
31B light-emitting component side second electrode pad
31a light-emitting component side first electrode
31b light-emitting component side second electrode
32 p-type semiconductor districts
33A photo detector side first electrode pad
33B photo detector side second electrode pad
33a photo detector side first electrode
34 metal derbies
40 wiring substrates
50a first line segment
50b second line segment
100 sensor devices

Claims (6)

1. a light-emitting element, wherein,
Possess: the substrate be made up of a conductive-type semiconductor; The light-emitting component of multiple semiconductor layers of a conductive-type semiconductor layer and inverse conductivity type semiconductor layer is drawn together in the upper surface upper strata stacked package of this substrate; There is in the upper surface side of described substrate the photo detector of the inverse conductivity type semiconductor region of the impurity being doped with inverse conductivity type; With at least one at least one electrode pad be connected respectively of described substrate, a described conductive-type semiconductor layer, described inverse conductivity type semiconductor layer and described inverse conductivity type semiconductor region; The metal derby engaged with the upper surface of this electrode pad,
When described electrode pad is connected with described substrate, electrode pad described at least one is configured in the upper surface of the described substrate between described light-emitting component and described photo detector, when described electrode pad is connected with a described conductive-type semiconductor layer, described inverse conductivity type semiconductor layer or described inverse conductivity type semiconductor region, electrode pad described at least one is configured in the upper surface of described substrate via insulating barrier.
2. light-emitting element according to claim 1, wherein,
Described electrode pad is to configure with the mode of following two line segment intersections, a line segment in described two line segments is one end line segment each other linking limit opposed with described light-emitting component in the limit opposed with described photo detector and described photo detector in described light-emitting component, another line segment in described two line segments is the other end line segment each other linking limit opposed with described light-emitting component in the limit opposed with described photo detector and described photo detector in described light-emitting component
Described electrode pad is bonded to multiple described metal derby.
3. light-emitting element according to claim 1, wherein,
Described electrode pad is multiple along being configured with between described light-emitting component and described photo detector,
In multiple described electrode pad, a part each other for the described electrode pad adjacent when observing described photo detector side from described light-emitting component side is overlapping, the described electrode pad being positioned at two ends is respectively with the one end linking the limit opposed with described photo detector of described light-emitting component and the limit opposed with described light-emitting component of described photo detector line segment each other or link other end line segment intersection each other
Multiple described electrode pad is bonded to metal derby described at least one respectively.
4. according to claim 2 or light-emitting element according to claim 3, wherein,
In multiple described metal derby, a part each other for the described metal derby adjacent when observing described photo detector side from described light-emitting component side is overlapping.
5. the light-emitting element according to any one of claim 1 to claim 4, wherein,
The mode also possessing to surround described light-emitting component and described photo detector is configured at the outer wall of the frame-shaped of the upper surface of described substrate, is positioned at the inner side of this outer wall and inner space is separated into the shading wall distinguishing corresponding space with described light-emitting component and described photo detector
This shading wall has the lower surface opposed with described substrate,
The interval of the lower surface of described substrate and described shading wall is less than the thickness in the normal direction of described electrode pad of described metal derby.
6. a sensor device, it uses the light-emitting element according to any one of claim 1 to claim 5, wherein,
Light is irradiated to shone thing from described light-emitting component, according to the output current from described photo detector, at least one in the positional information of described shone thing, range information and concentration information is detected, should export according to the reverberation from this shone thing from output current of described photo detector.
CN201380043214.0A 2012-08-30 2013-08-29 Light-emitting element and the sensor device for using the light-emitting element Active CN104584238B (en)

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US20150243802A1 (en) 2015-08-27

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