CN104576850A - 一种垂直结构发光二极管的制备方法 - Google Patents
一种垂直结构发光二极管的制备方法 Download PDFInfo
- Publication number
- CN104576850A CN104576850A CN201510022433.1A CN201510022433A CN104576850A CN 104576850 A CN104576850 A CN 104576850A CN 201510022433 A CN201510022433 A CN 201510022433A CN 104576850 A CN104576850 A CN 104576850A
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- Prior art keywords
- emitting diode
- light emitting
- layer
- vertical structure
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Links
- 238000000034 method Methods 0.000 title abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 28
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000010936 titanium Substances 0.000 claims description 74
- 229910052719 titanium Inorganic materials 0.000 claims description 25
- 239000004411 aluminium Substances 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 238000002360 preparation method Methods 0.000 claims description 20
- 229910002804 graphite Inorganic materials 0.000 claims description 16
- 239000010439 graphite Substances 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 229910002601 GaN Inorganic materials 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 8
- 238000000926 separation method Methods 0.000 claims description 8
- 239000002390 adhesive tape Substances 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- 238000007598 dipping method Methods 0.000 claims description 6
- 239000007772 electrode material Substances 0.000 claims description 6
- 239000011777 magnesium Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 239000000460 chlorine Substances 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 91
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 7
- 238000000407 epitaxy Methods 0.000 abstract description 3
- 239000011229 interlayer Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910009818 Ti3AlC2 Inorganic materials 0.000 abstract 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000013517 stratification Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510022433.1A CN104576850B (zh) | 2015-01-16 | 2015-01-16 | 一种垂直结构发光二极管的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510022433.1A CN104576850B (zh) | 2015-01-16 | 2015-01-16 | 一种垂直结构发光二极管的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104576850A true CN104576850A (zh) | 2015-04-29 |
CN104576850B CN104576850B (zh) | 2017-02-22 |
Family
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Family Applications (1)
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CN201510022433.1A Expired - Fee Related CN104576850B (zh) | 2015-01-16 | 2015-01-16 | 一种垂直结构发光二极管的制备方法 |
Country Status (1)
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CN (1) | CN104576850B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957939A (zh) * | 2016-05-28 | 2016-09-21 | 江苏积汇新能源科技有限公司 | 基于柔性石墨烯电极的垂直结构led加工方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103249248A (zh) * | 2013-04-28 | 2013-08-14 | 西安交通大学 | 复合基板、制造方法及基于该复合基板的led垂直芯片结构 |
CN203415610U (zh) * | 2013-06-21 | 2014-01-29 | 杭州格蓝丰纳米科技有限公司 | 一种垂直型石墨烯led芯片 |
CN103641119A (zh) * | 2013-12-03 | 2014-03-19 | 江苏大学 | 一种类石墨烯材料的制备方法 |
CN103985628A (zh) * | 2013-02-05 | 2014-08-13 | 国际商业机器公司 | 用于晶片转移的方法 |
JP2014152051A (ja) * | 2013-02-06 | 2014-08-25 | Nagoya Univ | グラフェン/SiC複合材料の製造方法及びそれにより得られるグラフェン/SiC複合材料 |
US20140239310A1 (en) * | 2013-02-22 | 2014-08-28 | Lg Electronics Inc. | Growth substrate, nitride semiconductor device and method of manufacturing the same |
CN104016345A (zh) * | 2014-06-03 | 2014-09-03 | 河海大学 | 一种类石墨烯二维层状碳化钛纳米片的制备方法 |
-
2015
- 2015-01-16 CN CN201510022433.1A patent/CN104576850B/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103985628A (zh) * | 2013-02-05 | 2014-08-13 | 国际商业机器公司 | 用于晶片转移的方法 |
JP2014152051A (ja) * | 2013-02-06 | 2014-08-25 | Nagoya Univ | グラフェン/SiC複合材料の製造方法及びそれにより得られるグラフェン/SiC複合材料 |
US20140239310A1 (en) * | 2013-02-22 | 2014-08-28 | Lg Electronics Inc. | Growth substrate, nitride semiconductor device and method of manufacturing the same |
CN103249248A (zh) * | 2013-04-28 | 2013-08-14 | 西安交通大学 | 复合基板、制造方法及基于该复合基板的led垂直芯片结构 |
CN203415610U (zh) * | 2013-06-21 | 2014-01-29 | 杭州格蓝丰纳米科技有限公司 | 一种垂直型石墨烯led芯片 |
CN103641119A (zh) * | 2013-12-03 | 2014-03-19 | 江苏大学 | 一种类石墨烯材料的制备方法 |
CN104016345A (zh) * | 2014-06-03 | 2014-09-03 | 河海大学 | 一种类石墨烯二维层状碳化钛纳米片的制备方法 |
Non-Patent Citations (1)
Title |
---|
JEEHWAN KIM ET AL: ""Principle of direct van der waals epitaxy of single-crystalline films on epitaxial graphene"", 《NATURE COMMUNICATIONS》 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105957939A (zh) * | 2016-05-28 | 2016-09-21 | 江苏积汇新能源科技有限公司 | 基于柔性石墨烯电极的垂直结构led加工方法 |
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Publication number | Publication date |
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CN104576850B (zh) | 2017-02-22 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Tianbao Inventor after: Jia Wei Inventor after: Xu Bingshe Inventor after: Yu Chunyan Inventor after: Zhang Haixia Inventor before: Li Tianbao Inventor before: Jia Wei Inventor before: Xu Bingshe Inventor before: Yu Chunyan Inventor before: Zhang Haixia |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20170222 |