CN104576662A - Stackable CMOS (complementary metal oxide semiconductors) sensor with high quantum conversion efficiency and preparation method of stackable CMOS sensor - Google Patents
Stackable CMOS (complementary metal oxide semiconductors) sensor with high quantum conversion efficiency and preparation method of stackable CMOS sensor Download PDFInfo
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Abstract
The invention provides a stackable CMOS (complementary metal oxide semiconductors) sensor with high quantum conversion efficiency and a preparation method of the stackable CMOS sensor. A surplus silicon nitride film is removed, so that the quantum transformation efficiency is improved, and the imaging quality is improved. The CMOS sensor disclosed by the invention has the following technological advantages as follows: (1), a logic wafer structure and a pixel wafer structure are stacked to form a whole, a large number of pixel points are formed in a smaller chip of the sensor, more pixels can be placed in a vacated space, and the logic wafer structure and the pixel wafer structure are mutually independent, so that better image optimization can be performed on a pixel point part, and high-performance optimization can also be performed on a circuit part; (2), copper is injected into the pixel wafer structure, the logic wafer structure and holes of an insulating layer so as to form a metal connecting component, and an interconnection structure is formed by the pixel wafer structure and the logic wafer structure; (3), through a photomask and a dry etching technology, the surplus silicon nitride film is removed, and a film structure of an incident light path is changed, so that the quantum transformation efficiency is improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to field of image sensors, specifically a kind of high conversion quantum efficiency stack cmos sensor and formed flow process.
Background technology
Stacking-type cmos sensor the signal processing circuit in original transducer has been put on original substrate, sensor chip overlaps to form the pixel portion of back-illuminated type cmos sensor, therefore, it is possible to realize forming a large amount of pixel in less sensor chip size, the space spared can be placed more pixel.In addition, the pixel in transducer and circuit are that separately independently so pixel part can carry out higher image quality optimization, circuit part also can carry out high-performance optimization.
Because COMS transducer is while having hi-vision picking rate and high noise immunity, also there is the feature such as low operating voltage, low-power consumption, and the preparation identical high power capacity wafer production line being carried out COMS imageing sensor can be utilized, but the image quality requirements of existing product to cmos image sensor is more and more higher, and traditional stack formula cmos sensor is provided with one deck barrier layer is used as copper barrier layer, the quantum conversion of cmos image sensor can be reduced like this, affect the image quality of electronic equipment.
Chinese patent (publication number: 102376724A) the invention provides a kind of image sensor devices presenting the quantum rate of improvement.Such as, provide a kind of back-illuminated type (BSI) image sensor devices, comprising: the substrate with front surface and rear surface; Be arranged on the photosensitive area at the front surface place of substrate; And the anti-reflecting layer above the rear surface being arranged on substrate.When measuring at the wavelength place being less than 700nm, anti-reflecting layer has the refractive index being more than or equal to about 2.2 and the extinction coefficient being less than or equal to about 0.05.Present invention also offers the anti-reflecting layer for back side illumination image sensor and manufacture method thereof.
Chinese patent (publication number: 103165633A) describes a kind of back-illuminated cmos image sensors, by the optoelectronic active region using front ion implantation technology to be formed in the optoelectronic active region of types of flexure and the extension with this adjacent formation in optoelectronic active region, and use backside particulate injection technology to form the optoelectronic active region of extension, and continue on substrate back and prepare a laser annealing layer, and then reach increase photon to the inversion quantity of electronics, improve quantum efficiency.The correlation technique feature improving cmos device white pixel problems is not recorded in this patent documentation.
Summary of the invention
In view of this, the invention provides a kind of stack cmos sensor of high conversion quantum efficiency and form flow process, by changing input path membrane structure, using light shield and dry etching to remove unnecessary barrier layer, improve the quantum conversion of stack cmos sensor, thus improve image quality.
For achieving the above object, the present invention adopts following scheme:
A kind of stack COMS transducer of high conversion quantum efficiency, described transducer comprises pixel crystal circle structure and logic crystal circle structure, this logic crystal circle structure is by an insulating barrier and the top being bonded to described pixel crystal circle structure, wherein, described transducer also comprises metal interconnecting wires district, and described pixel crystal circle structure is connected with described logic crystal circle structure by described metal interconnecting wires district;
Wherein, described pixel crystal circle structure comprises a barrier layer, and this barrier layer is covered in the upper surface of described metal interconnecting wires.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, also comprise photosensitive layer and sensitive layer in described pixel crystal circle structure, described sensitive layer covers the upper surface of described photosensitive layer.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, described photosensitive layer is provided with photodiode region and metal interconnecting wires district, described barrier layer is arranged in described sensitive layer, and described barrier layer is positioned at the top in described metal interconnecting wires district, described photosensitive layer is run through in described metal interconnecting wires district, and is provided with several photodiodes in described photosensitive layer.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, is filled with copper in described metal interconnecting wires district.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, also comprise pixel wiring layer in described pixel crystal circle structure, described pixel wiring layer covers the upper surface of described insulating barrier.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, is provided with metal line between several ground floors in described pixel wiring layer.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, described logic crystal circle structure comprises substrate, logical wiring layer, and described logical wiring layer is positioned at the upper surface of described substrate.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, is provided with metal line between several second layers in described logical wiring layer.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, the material of described photosensitive layer is silicon.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, the upper surface of described pixel crystal circle structure is also provided with some the color filters.
The stack COMS transducer of above-mentioned high conversion quantum efficiency, wherein, the upper surface of each described the color filter is provided with a lenticule.
A kind of above-mentioned method preparing the stack COMS transducer of high conversion quantum efficiency, wherein, some pieces of described welded plates are spaced at the edge of the upper surface of described sensitive layer, and around described lenticule and described barrier layer.
Present invention also offers a kind of method preparing the stack COMS transducer of high conversion quantum efficiency, wherein, described method comprises:
Step S1, the semiconductor device that one has a pixel crystal circle structure is provided, this pixel crystal circle structure comprises photosensitive layer and pixel wiring layer, and described photosensitive layer covers the upper surface of described pixel wiring layer, and described photosensitive layer is provided with photodiode region and metal interconnecting wires district;
Step S2, prepares a block film, and this block film covers the upper surface of described photosensitive layer;
Step S3, removes the block film be positioned at above described photodiode region, above described metal interconnecting wires district, forms barrier layer.
A kind of above-mentioned method preparing the stack COMS transducer of high conversion quantum efficiency, wherein, adopts photoetching process and dry etch process to remove the block film be positioned at above described photodiode region.
A kind of above-mentioned method preparing the stack COMS transducer of high conversion quantum efficiency, wherein, the material on described barrier layer is silicon nitride.
Compared with prior art, the present invention has following technical advantage:
1, the present invention adopts the cmos sensor of stack, and logic crystal circle structure and pixel crystal circle structure are stacked as one, therefore, it is possible to realize forming a large amount of pixel in less sensor chip size, the space spared can be placed more pixel.Further, logic crystal circle structure and pixel crystal circle structure separate, so pixel part can carry out higher image quality optimization, circuit part also can carry out high-performance optimization.
2, pass through pixel crystal circle structure, copper is injected in the hole of logic crystal circle structure and insulating barrier, and form metal interconnecting wires pixel crystal circle structure, logic crystal circle structure forms interconnect architecture.
3, by photoetching process and dry method etch technology, remove unnecessary barrier layer, change the membrane structure of input path, improve conversion quantum efficiency.
Accompanying drawing explanation
The accompanying drawing forming a part of the present invention is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1-4 is flowage structure schematic diagrames of an embodiment in the preparation method of the stack cmos sensor of height conversion quantum efficiency of the present invention;
Fig. 5 is the cross-sectional view of an embodiment in the stack cmos sensor of high conversion quantum efficiency of the present invention;
Fig. 6 is the plan structure schematic diagram of an embodiment in the stack cmos sensor of height conversion quantum efficiency of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, but not as limiting to the invention.
Fig. 1-4 is the flowage structure schematic diagram of an embodiment in the preparation method of the stack cmos sensor of height conversion quantum efficiency of the present invention.
As shown in Figure 1, first, the semiconductor structure that one has a photosensitive layer 5 is provided, some photodiodes 11 and several transistor (not shown)s are provided with in this photosensitive layer 5, carry out manufacturing process in the front (being lower surface in figure) of photosensitive layer 5 and form wiring layer 7, then pass through insulating barrier 3 and logic crystal circle structure 2 bonding mutually at wiring layer 7 lower surface.Wherein, comprise logical wiring layer 6 and substrate 4 in logic crystal circle structure 2, logical wiring layer 6 is positioned at the upper surface of substrate 4; In wiring layer 7, be provided with metal line 10 between several ground floors, in logical wiring layer 6, be provided with metal line 16 between several second layers.Insulating barrier 3 adopts nonconducting insulating material.
As shown in Figure 2, the top of etching photosensitive layer 5, wiring layer 7 and logic crystal circle structure 2, and by the top of etching stopping in logic crystal circle structure 2, after this etching, form contact hole and run through photosensitive layer 5 and wiring layer 7, and bottom it, be positioned at the top of logic crystal circle structure; Then in formed contact hole, inject metal, to form metal interconnecting wires district 8, photosensitive layer 5, wiring layer 7 and logical wiring floor 6 can be made to form interconnection structure by metal interconnecting wires district 8.Wherein, the metal injected in contact hole preferably can adopt copper, because copper has excellent electric conductivity.
As shown in Figure 3, prepare one deck block film 9 ' and cover the upper surface of photosensitive layer 5 and the upper surface in metal interconnecting wires district 8.This block film 9 ' can need to be prepared according to concrete technique by chemical vapour deposition (CVD) or other deposition processs, and the present invention does not limit this.Wherein, the material of block film 9 ' preferably can adopt silicon nitride.
As shown in Figure 4, because block film 9 ' can reduce the conversion quantum efficiency of transducer, the block film 9 ' be positioned at above photodiode region, photodiode 11 place 20 is needed to remove, so first carry out photoetching process, namely on this block film, one deck photoresist (not shown) is prepared, then the photomask by having figure carries out exposing and developing process, to form opening in this photoresist, by this opening, expose the upper surface of the block film 9 ' being positioned at photodiode region 20 upper section, then with this photoresist with opening for mask carries out dry etching to block film 9 ', and control the carrying out of etching, it is made to stop at the upper surface of photosensitive layer, thus expose the upper surface of photodiode region 20, the part being positioned at metal interconnecting wires district 8 upper surface is only left in block film 9 ' simultaneously after over etching, this part forms barrier layer 9.Proceed depositing operation, the upper surface in photodiode region 20 and barrier layer 9 deposits one deck sensitive layer 12, and controls deposition rate and make the upper surface of the sensitive layer 12 be positioned at above photodiode region 20 and barrier layer 9 remain on sustained height.Same, the deposition for sensitive layer can adopt as any known deposition processs such as chemical vapour deposition (CVD)s.
Continue to carry out subsequent technique to above-mentioned device architecture, to form welding version 15 directly over metal interconnecting wires district 8, and directly over photodiode region 20, form several the color filters 13, these several the color filters 13 are arranged side by side in the upper surface of photodiode region 20, and it is often very close to each other between adjacent two the color filters 13, each the color filter 13 is all formed with a lenticule, as shown in Figure 5.
More than the specific embodiment of the preparation method of the stack cmos sensor of height conversion quantum efficiency of the present invention, below with regard to this embodiment and by reference to the accompanying drawings 5 and the structure of accompanying drawing 6 to the stack cmos sensor of conversion quantum efficiency of the present invention be described in detail.
Fig. 5 is the cross-sectional view of an embodiment in the stack cmos sensor of high conversion quantum efficiency of the present invention; Fig. 6 is the plan structure schematic diagram of an embodiment in the stack cmos sensor of height conversion quantum efficiency of the present invention.
As shown in Figure 5, the stack cmos sensor that the high quantum of the embodiment of the present invention changes transfer efficient mainly comprises pixel crystal circle structure 1, logic crystal circle structure 2 insulating barrier 3 and metal interconnecting wires district 8; Wherein, insulating barrier 3 is between pixel crystal circle structure 1 and logic crystal circle structure 2, and pixel crystal circle structure 1 and logic crystal circle structure 2 to be isolated, logic crystal circle structure 1 and crystal circle structure 2 lay respectively at upper surface and the lower surface of insulating barrier 3; Realize connecting by metal interconnecting wires 21 between pixel crystal circle structure 1 and logic crystal circle structure 2.
Pixel crystal circle structure 1 comprises pixel wiring layer 7, photosensitive layer 5, sensitive layer 12.Wherein, pixel wiring layer 7 is positioned at the bottom of pixel crystal circle structure 1, and namely cover the upper surface of insulating barrier 3, photosensitive layer 5 covers the upper surface of pixel wiring layer 7, and sensitive layer 12 covers the upper surface of pixel wiring layer 7.
Logic crystal circle structure 2 comprises substrate 4 and logical wiring layer 6.Wherein, logical wiring layer 6 is positioned at the top of logic crystal circle structure, and namely the upper surface of logical wiring layer 6 is connected with the lower surface of insulating barrier 3, and the lower surface of logical wiring layer 6 is connected with the upper surface of substrate 4, and namely logical wiring layer 6 covers the upper surface of substrate 4.
Metal interconnecting wires district 8 is arranged in photosensitive layer 5, insulating barrier 3, pixel wiring floor 7 and logical wiring floor 6, and photosensitive layer 5, insulating barrier 3 and pixel wiring floor 7 are run through in this metal interconnecting wires district 8, be filled with copper in this metal interconnecting wires district, therefore there is good electric conductivity.
In sensitive layer 12, be also provided with a barrier layer, this barrier layer is covered in the upper surface of metal interconnecting wires 21.
Some photodiode regions 20 are also provided with in photosensitive layer 5, several photodiodes 11 are comprised in photodiode region, these several photodiodes 11 are preferably uniformly distributed in photodiode region 20, namely be distributed in sustained height place, and the spacing often between adjacent two photodiodes 11 is set to equal.
Metal line 10 between several ground floors is also provided with in the pixel wiring layer 7 of pixel crystal circle structure 1; Metal line 16 between several second layers is also provided with in the logical wiring layer 6 of logic crystal circle structure 2; Between this ground floor, the effect of metal line 10 is for connecting with being located at some photodiodes 11 in photosensitive layer 5 and some transistors (not illustrating in the drawings); Between this second layer, the effect of metal line 16 is several transistors (not illustrating in the drawings) for connecting in substrate 4.
Several the color filter 13 and several welded plates 15 are also provided with at the upper surface of pixel crystal circle structure 1, a lenticule 14 is equipped with directly over each the color filter 13, as shown in Figure 6, several lenticules 14 are arranged in the top of pixel crystal circle structure in matrix form, several welded plates 15 are arranged at the edge of pixel crystal circle structure 1, and several welded plates 15 are by wire (not shown) and metal interconnecting wires district 8 conducting.
In sum, the cmos sensor of stack of the present invention, by logic crystal circle structure with pixel crystal circle structure is stacking is integrated, therefore, it is possible to realize forming a large amount of pixel in less sensor chip size, the space spared can be placed more pixel.Further, logic crystal circle structure and pixel crystal circle structure separate, so pixel part can carry out higher image quality optimization, circuit part also can carry out high-performance optimization.And pass through pixel crystal circle structure, copper is injected in the hole of logic crystal circle structure and insulating barrier, and form metal interconnecting wires pixel crystal circle structure, logic crystal circle structure forms interconnect architecture.In addition, the present invention also by photoetching process and dry method etch technology, removes unnecessary barrier layer, changes the membrane structure of input path, improves conversion quantum efficiency.
These are only preferred embodiment of the present invention; not thereby embodiments of the present invention and protection range is limited; to those skilled in the art; the equivalent replacement that all utilizations specification of the present invention and diagramatic content are made and the scheme that apparent change obtains should be recognized, all should be included in protection scope of the present invention.
Claims (15)
1. the stack COMS transducer of a high conversion quantum efficiency, described transducer comprises pixel crystal circle structure and logic crystal circle structure, this logic crystal circle structure is by an insulating barrier and the top being bonded to described pixel crystal circle structure, it is characterized in that, described transducer also comprises metal interconnecting wires district, and described pixel crystal circle structure is connected with described logic crystal circle structure by described metal interconnecting wires district;
Wherein, described pixel crystal circle structure comprises a barrier layer, and this barrier layer is covered in the upper surface of described metal interconnecting wires.
2. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 1, is characterized in that, also comprise photosensitive layer and sensitive layer in described pixel crystal circle structure, described sensitive layer covers the upper surface of described photosensitive layer.
3. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 2, it is characterized in that, described photosensitive layer is provided with photodiode region and metal interconnecting wires district, described barrier layer is arranged in described sensitive layer, and described barrier layer is positioned at the top in described metal interconnecting wires district, described photosensitive layer is run through in described metal interconnecting wires district, and is provided with several photodiodes in described photosensitive layer.
4. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 1, is characterized in that, is filled with copper in described metal interconnecting wires district.
5. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 1, is characterized in that, also comprise pixel wiring layer in described pixel crystal circle structure, described pixel wiring layer covers the upper surface of described insulating barrier.
6. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 5, is characterized in that, is provided with metal line between several ground floors in described pixel wiring layer.
7. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 1, is characterized in that, described logic crystal circle structure comprises substrate, logical wiring layer, and described logical wiring layer is positioned at the upper surface of described substrate.
8. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 7, is characterized in that, is provided with metal line between several second layers in described logical wiring layer.
9. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 3, is characterized in that, the material of described photosensitive layer is silicon.
10. the stack COMS transducer of high conversion quantum efficiency as claimed in claim 1, is characterized in that, the upper surface of described pixel crystal circle structure is also provided with some the color filters.
The stack COMS transducer of 11. high conversion quantum efficiencies as claimed in claim 10, is characterized in that, the upper surface of each described the color filter is provided with a lenticule.
12. a kind of methods preparing the stack COMS transducer of high conversion quantum efficiency as claimed in claim 11, it is characterized in that, some pieces of described welded plates are spaced at the edge of the upper surface of described sensitive layer, and around described lenticule and described barrier layer.
13. 1 kinds of methods preparing the stack COMS transducer of high conversion quantum efficiency, it is characterized in that, described method comprises:
Step S1, the semiconductor device that one has a pixel crystal circle structure is provided, this pixel crystal circle structure comprises photosensitive layer and pixel wiring layer, and described photosensitive layer covers the upper surface of described pixel wiring layer, and described photosensitive layer is provided with photodiode region and metal interconnecting wires district;
Step S2, prepares a block film, and this block film covers the upper surface of described photosensitive layer;
Step S3, removes the block film be positioned at above described photodiode region, above described metal interconnecting wires district, forms barrier layer.
14. a kind of methods preparing the stack COMS transducer of high conversion quantum efficiency as claimed in claim 13, is characterized in that, adopt photoetching process and dry etch process to remove the block film be positioned at above described photodiode region.
15. a kind of methods preparing the stack COMS transducer of high conversion quantum efficiency as claimed in claim 13, it is characterized in that, the material on described barrier layer is silicon nitride.
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Application publication date: 20150429 |