CN104576525B - A kind of flexible array substrate and preparation method thereof and display device - Google Patents
A kind of flexible array substrate and preparation method thereof and display device Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention provides a kind of flexible array substrate and preparation method thereof and display devices, grid, grid line, insulating layer, active layer, source electrode, drain electrode, pixel electrode, public electrode, the data line of the array substrate are all made of graphite alkenes material composition, to significantly reduce the possibility that flexible array substrate is cracked, reduce number of devices and type required when prepared by array substrate, simplify production technology, manufacturing cost is reduced, the aperture opening ratio of prepared display device is further improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a flexible array substrate, a preparation method thereof and a display device.
Background
A Thin Film Transistor Liquid crystal display (TFT-LCD), which is one of Active Matrix type Liquid crystal display devices (AM-LCD). The TFT-LCD generally includes a backlight, upper and lower polarizers, a liquid crystal cell, a driving and controlling IC, and the like, wherein the core component is the liquid crystal cell. The Liquid Crystal cell is formed by filling Liquid Crystal (LC) into an array substrate and a color film substrate after the array substrate and the color film substrate are aligned, the cell thickness is kept to be a certain value through a spacer, the periphery of the cell is sealed by frame sealing glue, a pixel electrode and a common electrode are mostly prepared by indium tin oxide which is a transparent conductive material, and conducting wires such as a grid line, a data line and the like are prepared by metals such as molybdenum, aluminum, copper and the like and alloys. The basic working principle of the liquid crystal cell is that a Thin Film Transistor (TFT) is used to control the voltage of a pixel electrode, control the arrangement state of liquid crystal molecules between two substrates, generate gray scale by using the photoelectric characteristic of a liquid crystal material, and cooperate with the filtering characteristic of a color Film, thereby displaying various rich colors.
With the increasing demand of people for display technologies, future display devices are developed in a flexible direction. However, indium tin oxide, which is a conductive material used for manufacturing an array substrate, is an inorganic material, and is brittle, and has a limited bending angle, and if the indium tin oxide is used as a conductive material of a flexible display device, cracks and fragmentation phenomena are easily generated during bending, so that the resistance is rapidly increased, and even the display fails; organic materials such as plastics are mostly adopted for the substrate of the flexible display device, and the adhesion of indium tin oxide to the plastic substrate is inferior to that of a glass substrate; in addition, the price of indium continues to rise, making indium tin oxide an increasingly expensive material.
Disclosure of Invention
In view of the above, the main objective of the present invention is to provide a flexible array substrate, a method for manufacturing the same, and a display device, which can reduce the possibility of cracking of the flexible array substrate, simplify the manufacturing process, and reduce the manufacturing cost.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a preparation method of a flexible array substrate comprises the following steps:
forming a first graphene layer, and forming a pattern of the first graphene layer comprising a grid and a grid line through a composition process;
forming a second graphene layer, exposing an active region of the second graphene layer for forming an active layer by coating photoresist, exposing and developing, and carrying out hydrogenation treatment on the active region to form an active layer consisting of hydrogenated graphene; and forming a pattern of a second graphene layer comprising a source electrode, a drain electrode and a data line outside the active layer by a composition process, wherein the active layer is connected with the source electrode and the drain electrode.
In the above technical solution, the preparation method further comprises:
forming a graphene oxide layer, the graphene oxide layer being an insulating layer disposed between a first graphene layer and a second graphene layer.
In the above technical solution, the preparation method further comprises:
forming the pattern of the first graphene layer further comprises forming a common electrode and a common electrode line;
forming the pattern of the second graphene layer further includes forming a pixel electrode connected to the drain electrode.
Alternatively, the preparation method further comprises:
forming the pattern of the second graphene layer further comprises forming a pixel electrode connected to the drain electrode;
forming a protective layer covering the pattern of the second graphene layer;
and forming a third graphene layer above the protective layer, and forming a pattern of the third graphene layer including a common electrode and a common electrode line through a composition process.
In the above technical scheme, forming the first graphene layer, the second graphene layer and the third graphene layer includes: forming a graphene layer by adopting a chemical vapor deposition method or a spin-coating method; the forming a graphene oxide layer includes: spin coating or spray coating a graphene oxide solution, and drying; the hydrotreating the active region of the second graphene layer includes: the active region is hydrogenated using hydrogen or a mixed gas of hydrogen and argon.
The present invention also provides a flexible array substrate, comprising:
a pattern of a first graphene layer including a gate electrode, a gate line;
the active region of the second graphene layer used for forming the active layer is exposed through coating photoresist, exposure and development, and the active layer is obtained through carrying out hydrogenation treatment on the active region of the second graphene layer.
In the above technical solution, the array substrate further includes an insulating layer disposed between the first graphene layer and the second graphene layer.
In the above technical scheme, the insulating material is graphene oxide.
In the above technical scheme:
the pattern of the first graphene layer further comprises a common electrode and a common electrode line;
the pattern of the second graphene layer further includes a pixel electrode connected to the drain electrode.
Or,
the pattern of the second graphene layer further comprises a pixel electrode connected with the drain electrode;
a protective layer is arranged above the second graphene layer;
and a third graphene layer is arranged above the protective layer, and the pattern of the third graphene layer comprises a common electrode and a common electrode wire.
The invention also provides a display device which comprises the array substrate.
In the above technical scheme, the display device includes a color filter substrate disposed opposite to the array substrate, and no black matrix is disposed on the color filter substrate.
According to the preparation method of the flexible array substrate, the grid electrode, the grid line, the insulating layer, the active layer, the source electrode, the drain electrode, the pixel electrode, the common electrode and the data line of the array substrate are all made of graphene materials.
All components on the flexible array substrate are based on graphene materials, so that the possibility of cracking of the flexible array substrate is greatly reduced, the number and types of equipment required by the preparation of the flexible array substrate are reduced, the production process is simplified, and the manufacturing cost of the array substrate is greatly reduced; meanwhile, the thickness of the array substrate finished product is reduced, so that the development requirement of the flexible array substrate is met. Moreover, the graphene has a thermal conductivity as high as 5300W/m.K, can realize rapid heat dissipation, and is suitable for preparing a Gate driver on array (GOA) functional unit of an array substrate.
The graphene oxide is used for replacing conventional materials such as organic resin and silicon nitride in the insulating layer of the array substrate, and the graphene material is almost completely transparent, so that the absorption rate of a single-layer graphene film with the thickness of 0.34nm to light is only 2.3%, and therefore, a display device prepared by using the array substrate can omit a black matrix, avoid the limitation of the black matrix and further improve the aperture opening ratio of the display device. The aperture ratio of the display device thus manufactured can be improved by at least 15% compared to the prior art using the black matrix.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a flexible array substrate according to embodiment 1 of the present invention;
FIGS. 2 to 7 are schematic views of steps 101 to 106 in FIG. 1;
fig. 8 is a flowchart of a method for manufacturing a flexible array substrate according to embodiment 2 of the present invention;
FIGS. 9-16 are schematic diagrams of steps 201-208 of FIG. 8.
Description of reference numerals:
1- -a flexible substrate; 2- -a first graphene layer; 3-a grid; 4- -common electrode; 5- -insulating layer; 6- -second graphene layer; 7- -active layer; 8- -source electrode; 9- -the drain electrode; 10- -pixel electrode; 11- -protective layer.
Detailed Description
The present invention is further explained below.
Graphene is the thinnest and the hardest nanomaterial in the world today, and is almost completely transparent, for example, a single-layer graphene film with a thickness of 0.34nm absorbs only 2.3% of light. The heat conductivity coefficient is as high as 5300W/m.K, which is higher than that of the carbon nano tube and the diamond; and the electron mobility exceeds 15000cm at normal temperature2V · s, higher than carbon nanotubes or crystalline silicon; the resistivity is only about 6-10 omega cm, is lower than copper or silver, and is the material with the minimum resistivity in the world at present. Meanwhile, the carbon source has wide sources and is becoming a substitute for rare mineral resources such as indium, tin and the like. Therefore, graphene is used as a transparent and flexible conductor to replace indium tin oxide material for preparing flexible display devices.
In view of this, the present invention provides a method for manufacturing a flexible array substrate, including:
forming a first graphene layer, and forming a pattern of the first graphene layer comprising a grid and a grid line through a composition process;
forming a second graphene layer, exposing an active region of the second graphene layer for forming an active layer by coating photoresist, exposing and developing, and carrying out hydrogenation treatment on the active region to form an active layer consisting of hydrogenated graphene; and forming a pattern of a second graphene layer comprising a source electrode, a drain electrode and a data line outside the active layer by a composition process, wherein the active layer is connected with the source electrode and the drain electrode.
The preparation method of the flexible array substrate provided by the invention has no limitation on the type of the array substrate, can be applied to a bottom gate type thin film transistor array substrate, and can also be applied to a top gate type thin film transistor array substrate, that is, the first graphene layer and the second graphene layer in the scheme have different sequences when applied to different array substrates, and the steps are not limited, and only two graphene layers are distinguished.
Specifically, when the preparation method is applied to a bottom gate type array substrate, a first graphene layer including a gate electrode and a gate line may directly cover the top of the array substrate, and a second graphene layer including an active layer, a source electrode, a drain electrode and a data line may be located above the first graphene layer; when the preparation method is applied to the top gate type array substrate, the second graphene layer comprising the active layer, the source electrode, the drain electrode and the data line can be directly covered above the array substrate, and the first graphene layer comprising the gate electrode and the gate line can be positioned above the second graphene layer.
In the above preparation method, the pattern of the first graphene layer may further include a gate lead, a gate pad (gate pad), and the like in the peripheral region.
In the preparation method, the grid electrode, the grid line, the active layer, the source electrode, the drain electrode and the data line of the array substrate are all made of graphene materials, so that the possibility of cracking of the flexible array substrate is reduced, the thickness of a finished product of the array substrate is reduced, and the development requirement of the flexible array substrate is met. Moreover, the graphene has a thermal conductivity as high as 5300W/m.K, can realize rapid heat dissipation, and is suitable for preparing a Gate driver on array (GOA) functional unit of an array substrate.
Further, the preparation method further comprises the following steps: forming a graphene oxide layer, the graphene oxide layer being an insulating layer disposed between a first graphene layer and a second graphene layer.
The insulating layer is made of graphene oxide materials, and the types of materials required by the preparation of the array substrate are reduced, so that the number and types of equipment required by the preparation of the flexible array substrate are reduced, the production process is simplified, and the manufacturing cost of the array substrate is reduced.
Further, the preparation method further comprises the following steps:
forming the pattern of the first graphene layer includes forming a common electrode and a common electrode line;
forming the pattern of the second graphene layer includes forming a pixel electrode connected to the drain electrode.
Or, further, the above preparation method further comprises:
forming the pattern of the second graphene layer includes forming a pixel electrode connected to the drain electrode;
forming a protective layer covering the pattern of the second graphene layer;
and forming a third graphene layer above the protective layer, and forming a pattern of the third graphene layer including a common electrode and a common electrode line through a composition process.
In the technical scheme, the grid electrode, the grid line, the insulating layer, the active layer, the source electrode, the drain electrode, the pixel electrode, the common electrode and the data line of the array substrate are all made of graphene materials, and the types of materials required by the preparation of the array substrate are further reduced, so that the number and types of equipment required by the preparation of the flexible array substrate are further reduced, the production process is simplified, and the manufacturing cost of the array substrate is greatly reduced.
Wherein, among the above-mentioned technical scheme:
the forming of the first graphene layer and the second graphene layer comprises: forming a graphene layer by adopting a chemical vapor deposition method or a spin-coating method;
the forming a graphene oxide layer includes: spin coating or spray coating a graphene oxide solution, and drying;
the hydrotreating the active region of the second graphene layer includes: hydrogenating the active region by using hydrogen or a mixed gas of hydrogen and argon;
the forming a third graphene layer includes: and forming the graphene layer by adopting chemical vapor deposition or a spin-coating method.
The invention also provides a flexible array substrate, and the flexible array substrate is prepared by adopting the corresponding preparation method, and a display device is prepared by adopting the array substrate.
The display device may include a color film substrate disposed opposite to the array substrate.
The color filter substrate may be a conventional color filter substrate, or a color filter substrate without a black matrix. The color film substrate may not be provided with a black matrix because: when a display device is manufactured using the array substrate, since all components of the array substrate are made of a graphene-based material and a thin film of the graphene-based material is almost completely transparent, for example, a single-layer graphene thin film having a thickness of 0.34nm has a transmittance of more than 95%, an absorption of 2.3%, and a reflectance of less than 0.1%. Therefore, when the array substrate is used for preparing a display device, the backlight hardly reflects, so that the color film substrate does not need a black matrix part. Therefore, the process of the black matrix can be omitted in the production process of the color film substrate, and the color film substrate without the black matrix and the array substrate can be used for preparing the display device, so that the limitation of the black matrix can be avoided, the aperture opening ratio of the display device is further improved, and compared with the prior art adopting the black matrix, the aperture opening ratio can be at least improved by 15%.
The present invention will be further described in detail with reference to the accompanying drawings and examples.
The graphene adopted in the embodiment of the invention can be directly purchased from manufacturers (such as graphene research institute in south of the Yangtze river); the graphene oxide can be prepared by itself by passing graphene through an oxidant (such as KMnO)4Etc.) oxidizing, centrifugally separating and the like; the adopted graphene oxide can also be obtained by directly purchasing graphene oxide solid from manufacturers, and dispersing the graphene oxide solid into an organic solvent to prepare an organic soluble graphene oxide solution, wherein the organic solvent can be ketone, ether or aromatic solvent, the ketone can be acetone, the ether can be diethyl ether, and the aromatic solvent can be aromatic solventAs toluene.
In the embodiments of the present invention, a bottom gate type thin film transistor array substrate is taken as an example, and in practical applications, the present invention may be applied to a bottom gate type or a top gate type and other types of thin film transistor array substrates, and the present embodiment does not limit the present invention.
The composition process in the embodiment of the invention comprises the following steps: a layer to be patterned, such as a graphene layer, is coated with a photoresist, and then exposed, developed, and etched to form a desired pattern.
Example 1
Fig. 1 is a flowchart of a method for manufacturing a flexible array substrate according to embodiment 1, which specifically includes:
step 101: forming a first graphene layer on a flexible substrate;
step 102: forming a pattern of a first graphene layer including a gate line, a gate electrode, a common electrode, and a common electrode line through a patterning process;
step 103: forming a graphene oxide layer as an insulating layer over the first graphene layer;
step 104: forming a second graphene layer over the insulating layer;
step 105: exposing an active region of a second graphene layer for preparing an active layer by coating photoresist, exposing and developing, and hydrogenating the active region to obtain hydrogenated graphene so as to form an active layer consisting of the hydrogenated graphene;
step 106: and forming a pattern of a second graphene layer including a data line, a source electrode, a drain electrode and a pixel electrode outside the active layer by a patterning process, wherein the active layer is connected with the source electrode and the drain electrode.
The specific steps of example 1 will be described in detail with reference to fig. 2 to 7.
FIG. 2 is a schematic diagram of step 101 in FIG. 1. As shown in fig. 2, a first graphene layer is formed on a flexible substrate, and a layer of graphene material is first coated on the flexible substrate 1 by a chemical vapor deposition (PECVD) or spin coating method to form a first graphene layer 2. Wherein the layer thickness of the graphene layer isSpecifically, the material of the flexible substrate 1 may be transparent metal foil, flexible glass, polymer, such as polyimide, polyethylene terephthalate.
FIG. 3 is a schematic diagram of step 102 in FIG. 1. As shown in fig. 3, a first graphene layer pattern including a gate electrode 3, a gate line (not shown), a common electrode 4, and a common electrode line (not shown) is formed by a patterning process.
FIG. 4 is a schematic diagram of step 103 in FIG. 1. As shown in fig. 4, a graphene oxide layer is formed by spin coating or spray coating a graphene oxide solution on the first graphene layer, and is further dried at 20 to 80 ℃ to form the insulating layer 5. Wherein the layer thickness of the graphene oxide layer is
Theoretical calculations by Ito Jun et al show that oxygen absorption at the surface of graphene leads to an increase in energy band, and as the oxygen absorption increases from 0 to 0.5ML (O/C =50%), graphene is converted from a semimetal with a zero band gap to a semiconductor with a band gap of 3.39eV, becoming an insulator after complete oxidation. Oxidized graphene can be converted to a conductor upon reduction, for example, from an insulator to a conductor when oxidized graphene is reduced to an O/C =25% state. The graphene is oxidized to different degrees, so that a semiconductor and an insulator can be respectively formed, and the completely oxidized graphene is an insulating material.
FIG. 5 is a schematic diagram of step 104 in FIG. 1. As shown in fig. 5, a layer of graphene oxide is coated on the insulating layer 5 by PECVD or spin coatingA layer of graphene material is applied to form a second graphene layer 6. Wherein the layer thickness of the graphene layer is
FIG. 6 is a schematic diagram of step 105 in FIG. 1. As shown in fig. 6, first, an active region of the second graphene layer 6 for preparing an active layer is exposed by coating a photoresist, exposing and developing; secondly, the active region for preparing the active layer is hydrogenated, and since the other regions of the second graphene layer except the active region are coated with the photoresist, the active region can be hydrogenated only, and the other regions are not affected. Thereby, the active layer 7 made of hydrogenated graphene is formed. Specifically, an active region for preparing an active layer is hydrogenated, and a graphene layer is hydrogenated for 3-5 hours under the pressure of 0.05-0.5 mbar by using hydrogen or a mixed gas of hydrogen and argon, wherein the volume ratio of hydrogen in the mixed gas of hydrogen and argon is 5% -15%. The active layer 7 is located above the gate 3, and the width of the active layer 7 is smaller than that of the gate 3.
FIG. 7 is a schematic diagram of step 106 of FIG. 1. As shown in fig. 7, the second graphene layer 6 including the data line (not shown), the source electrode 8, the drain electrode 9, and the pixel electrode 10 is patterned outside the active layer through a patterning process. The source electrode 8 and the drain electrode 9 are respectively in contact with the active layer 7, the contact regions are both located above the gate electrode 3, the active layer 7 is located between the source electrode 8 and the drain electrode 9, and the pixel electrode 10 is in contact with the drain electrode 9.
The array substrate can be prepared by the method. Meanwhile, the substrate can be used for preparing a display device.
When the display device is manufactured, a mode of arranging a color film substrate on the opposite side of the array substrate to form a liquid crystal box can be adopted, wherein the color film substrate can adopt a conventional color film substrate, and can also adopt a color film substrate without a black matrix.
In the embodiment, the color film substrate without the black matrix is adopted, and compared with the prior art adopting the black matrix, the aperture opening ratio can be improved by 15%.
Example 2
Fig. 8 is a flowchart of a method for manufacturing a flexible array substrate according to embodiment 2, which specifically includes:
step 201: forming a first graphene layer on a flexible substrate;
step 202: forming a pattern of a first graphene layer including a gate line and a gate electrode by a patterning process;
step 203: forming a graphene oxide layer as an insulating layer over the first graphene layer;
step 204: forming a second graphene layer over the insulating layer;
step 205: exposing an active region of a second graphene layer for preparing an active layer by coating photoresist, exposing and developing, and hydrogenating the active region to obtain hydrogenated graphene so as to form an active layer consisting of the hydrogenated graphene;
step 206: forming a pattern of a second graphene layer including a data line, a source electrode, a drain electrode, and a pixel electrode outside the active layer by a patterning process;
step 207: forming a protective layer over the second graphene layer;
step 208: and forming a third graphene layer on the protective layer, and forming a pattern of the third graphene layer including the common electrode and the common electrode line through a patterning process.
The specific steps of example 2 will be described in detail below with reference to fig. 9 to 16.
Fig. 9 is a schematic diagram of step 201 in fig. 8. As shown in fig. 9, step 201 is the same as step 101 in embodiment 1.
FIG. 10 is a diagram illustrating step 202 in FIG. 8. As shown in fig. 10, a first graphene layer including a gate electrode 3 and a gate line (not shown) is patterned by a patterning process.
FIGS. 11 to 14 are schematic views of steps 203 to 206 in FIG. 8. As shown in FIGS. 11 to 14, steps 203 to 206 in FIG. 8 are the same as steps 103 to 106 in embodiment 1.
FIG. 15 is a diagram illustrating step 207 of FIG. 8. As shown in fig. 15, a protective layer 11 is formed over the second graphene layer. The material of the protective layer 11 may be silicon dioxide, an organic resin, or the like. Wherein the protective layer has a layer thickness of
FIG. 16 is a diagram illustrating step 208 of FIG. 8. As shown in fig. 16, a layer of graphene material, which is a third graphene layer, is first coated on the protective layer 11 by PECVD or spin coating, wherein the layer thickness of the graphene layer isA pattern of a third graphene layer including the common electrode 4 and a common electrode line (not shown in the figure) is formed through a patterning process.
The array substrate is prepared by the method, and the display device is prepared by using the substrate. Here, a conventional color film substrate was used to fabricate a display device as in example 1; and a color film substrate without a black matrix can be adopted to further improve the aperture opening ratio of the display device.
In the embodiment, the color film substrate without the black matrix is adopted, and compared with the prior art adopting the black matrix, the aperture opening ratio can be improved by 15%.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (7)
1. A preparation method of a flexible array substrate is characterized by comprising the following steps:
forming a first graphene layer, and forming a pattern of the first graphene layer comprising a grid and a grid line through a composition process;
forming a second graphene layer, exposing an active region of the second graphene layer for forming an active layer by coating photoresist, exposing and developing, and carrying out hydrogenation treatment on the active region to form an active layer consisting of hydrogenated graphene; forming a pattern of a second graphene layer including a source electrode, a drain electrode and a data line outside the active layer by a patterning process, wherein the active layer is connected with the source electrode and the drain electrode; wherein, the preparation method further comprises the following steps:
forming a graphene oxide layer, the graphene oxide layer being an insulating layer disposed between a first graphene layer and a second graphene layer;
forming the pattern of the first graphene layer further comprises forming a common electrode and a common electrode line;
forming the pattern of the second graphene layer further comprises forming a pixel electrode connected to the drain electrode;
the grid electrode, the grid line, the insulating layer, the active layer, the source electrode, the drain electrode, the pixel electrode, the common electrode and the data line are all made of graphene materials, and the thickness of the graphene oxide layer is equal to that of the graphene oxide layer
2. The method of manufacturing a flexible array substrate according to claim 1, further comprising:
forming the pattern of the second graphene layer further comprises forming a pixel electrode connected to the drain electrode;
forming a protective layer covering the pattern of the second graphene layer;
and forming a third graphene layer above the protective layer, and forming a pattern of the third graphene layer including a common electrode and a common electrode line through a composition process.
3. The method of manufacturing a flexible array substrate according to any one of claims 1 to 2,
the forming of the first graphene layer and the second graphene layer comprises: forming a graphene layer by adopting a chemical vapor deposition method or a spin-coating method;
the forming a graphene oxide layer includes: spin coating or spray coating a graphene oxide solution, and drying;
the hydrotreating the active region includes: and hydrogenating the active region by using hydrogen or a mixed gas of hydrogen and argon.
4. A flexible array substrate, comprising:
a pattern of a first graphene layer including a gate electrode, a gate line;
the active region of the second graphene layer used for forming the active layer is exposed through coating photoresist, exposure and development, and the active layer is obtained through carrying out hydrogenation treatment on the active region of the second graphene layer; wherein,
the array substrate comprises a graphene oxide layer arranged between a first graphene layer and a second graphene layer, and the graphene oxide layer is an insulating layer;
wherein the pattern of the first graphene layer further comprises a common electrode and a common electrode line;
the pattern of the second graphene layer further comprises a pixel electrode connected with the drain electrode;
the grid electrode, the grid line, the insulating layer, the active layer, the source electrode, the drain electrode, the pixel electrode, the common electrode and the data line are all made of graphene materials, and the thickness of the graphene oxide layer is equal to that of the graphene oxide layer
5. The array substrate of claim 4,
the pattern of the second graphene layer further comprises a pixel electrode connected with the drain electrode;
a protective layer is arranged above the second graphene layer;
and a third graphene layer is arranged above the protective layer, and the pattern of the third graphene layer comprises a common electrode and a common electrode wire.
6. A display device comprising the array substrate according to any one of claims 4 to 5.
7. The display device according to claim 6, wherein the display device comprises a color filter substrate disposed opposite to the array substrate, and no black matrix is disposed on the color filter substrate.
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| CN104867970A (en) * | 2015-05-21 | 2015-08-26 | 京东方科技集团股份有限公司 | Thin film transistor, array substrate, display device and manufacturing method of the array substrate |
| US10146257B2 (en) * | 2015-10-02 | 2018-12-04 | Microsoft Technology Licensing, Llc | Foldable device having sensor |
| CN106935636A (en) * | 2015-12-31 | 2017-07-07 | 中芯国际集成电路制造(上海)有限公司 | Fin formula field effect transistor and forming method thereof |
| CN106941080B (en) * | 2016-01-04 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | Fin field effect transistor and forming method thereof |
| CN105785685B (en) | 2016-05-11 | 2018-03-09 | 深圳市华星光电技术有限公司 | Display with double faces, display module and its tft array substrate |
| CN107170758B (en) * | 2017-05-25 | 2020-08-14 | 京东方科技集团股份有限公司 | Flexible display substrate, manufacturing method thereof and display device |
| CN107104078A (en) * | 2017-06-06 | 2017-08-29 | 深圳市华星光电技术有限公司 | Graphene electrodes and its patterning preparation method, array base palte |
| CN107993981B (en) * | 2017-11-22 | 2020-11-06 | 深圳市华星光电半导体显示技术有限公司 | TFT substrate and method for manufacturing the same |
| CN107946245A (en) * | 2017-11-22 | 2018-04-20 | 深圳市华星光电半导体显示技术有限公司 | A kind of array base palte and preparation method thereof |
| CN108010879A (en) * | 2017-11-22 | 2018-05-08 | 深圳市华星光电半导体显示技术有限公司 | The production method and flexible array substrate of a kind of flexible array substrate |
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