CN104576371B - A method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe - Google Patents
A method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 44
- 230000005669 field effect Effects 0.000 title claims abstract description 20
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000005036 potential barrier Methods 0.000 claims abstract description 46
- 229910002704 AlGaN Inorganic materials 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 17
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 230000003993 interaction Effects 0.000 abstract description 2
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- 239000007789 gas Substances 0.000 description 66
- 239000010410 layer Substances 0.000 description 50
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- 238000005457 optimization Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 230000010287 polarization Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
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- 239000000203 mixture Substances 0.000 description 2
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- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention is a kind of method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe, it is characterized in that for the heterojunction structure different with the outer raceway groove independent design outside gate electrode of the interior raceway groove under field-effect tube gate electrode, so that big radio frequency grid voltage is changed in lower outer raceway groove and remains enough electron gas densities, back of the body potential barrier is generated using electronics negative electrical charge, and the energy band distortion of outer raceway groove and raceway groove block in suppression device radio frequency operation.Then barrier layer is thinned and makes interior raceway groove hetero-junctions, improves the control dynamics of the internal channel conduction of gate electrode, realizes efficient radio frequency operation.The interaction of inside and outside raceway groove is studied by self-consistent solution two dimension Poisson's equation and Schrodinger equation, the energy band distortion in suppression device radio frequency operation and current collapse.The field distribution of inside and outside raceway groove is balanced, breakdown voltage is improved.
Description
Technical field
The present invention relates to a kind of manufacturing method of semiconductor devices, especially a kind of manufacture electron gas back barrier gallium nitride is different
The method of matter junction field effect pipe.The nitride heterojunction structure that high electron gas density is specifically manufactured with energy band tailoring method is made
Outer raceway groove outside for gate electrode, then the interior raceway groove hetero-junctions that high transconductance is made in gate electrode lower barrierlayer is thinned with grooving method, make
It obtains outer raceway groove under the high minus gate voltage occurred in device radio frequency operation and still retains enough electron gas composition back of the body potential barriers, strengthen outer fissure
The quantum confinement in road, the outer raceway groove energy band distortion in inhibiting big signal RF to work, eliminates outer raceway groove and blocks, and reduction electric current collapses
It collapses, the method to manufacture efficient, high-power gallium nitride heterojunction field effect transistor.Belong to technical field of semiconductor device.
Background technology
Big band offsets and strong polarization charge on dimensional electron junction interface generate highdensity two-dimensional electron gas, nitridation
The broad stopband of object significantly improves the breakdown voltage of hetero-junctions again, enables manufactured hetero junction field effect pipe in high-voltage great-current shape
It works under state, significantly improves the radio frequency operation efficiency and output power of field-effect tube.But this polarity hetero-junctions also gives device
Part development brings some negative effects.Source, grid and drain electrode in field-effect tube are all the metals of high conductance, are constituted respective etc.
Gesture body, transverse electric field zero.And barrier layer is semiconductor, Conductivity Ratio metal is much lower.The electric field condition of continuity requires potential barrier
Layer is also zero with the transverse electric field at boundary electrode, and step-like Potential Distributing is just formed in potential barrier layer surface.It is micro- to this potential
The electric field strength found out after quotient all concentrates on potential and rises at step, forms the high field peak in raceway groove.In electric field rising area and electricity
There is very strong positive and negative electric-force gradient in field descending area.This strong electric field gradient along channel direction is changed by two-dimentional Poisson's equation
The wave function of the Potential Distributing and electron gas along hetero-junctions direction is become.It is generated when the strong minus gate voltage of radio frequency negative half period arrives huge
Heterostructure band distortion, prevent a part of electronics in electric field rising area from entering electric field descending area, form outer raceway groove and block.
The radio-frequency current of device is reduced, current collapse is generated.The performance degradation in device radio frequency operation is accelerated, its use is reduced
Service life.
Energy band tailoring is a kind of effective ways for overcoming outer raceway groove to block.Applicant is solving two-dimentional Poisson's equation and Xue Ding
It is found when straightforward words equation, positive and negative electric-force gradient is respectively equivalent to positive and negative space charge to the effect of heterostructure band, they distinguish
Cause curved and convex under energy band.If growing one layer of AlGaN at the channel layer back side carries on the back potential barrier, back of the body potential barrier circle can be utilized
Negative polarization charge on face compensates for positive electricity field gradient, reduction energy band distortion.But AlGaN back of the body potential barriers are generated with buffering interlayer
Positive polarisation charge will produce second raceway groove trap again and destroy the radio frequency operation of field-effect tube.Therefore, it is necessary to whole bufferings
Layer all makes AlGaN layer into.This not only increases the strain of the difficulty of Material growth and channel layer, and the thermal conductivity of AlGaN layer
Rate is very low, significantly reduces the output power of device.So that is used in device development at present is all low Al components ratio back of the body potential barrier,
It is very weak to carry on the back barrier effect.In addition, theoretical modeling finds that electric-force gradient is distributed in entire hetero-junctions, it is heterogeneous to rely solely on back of the body potential barrier
One layer of polarization charge on interface can not compensate for the effect of electric-force gradient completely.Especially when the grid length of field-effect tube is very short, leakage
When pressure is very high, pinch-off voltage is very negative, still it is difficult to inhibit outer raceway groove to block with current back of the body potential barrier.This problem, which becomes, to be restricted
The radio-frequency performance, reliability of GaN hetero junction field effects pipe and popularization and application principal element at present.
Nitride heterojunction raceway groove trap is to generate back of the body potential barrier by the negative electrical charge of two-dimensional electron gas in trap.When raceway groove presss from both sides
When disconnected, electron gas disappears in trap, just loses back of the body potential barrier.Therefore, applicant expects designing for interior raceway groove and outer raceway groove different
Heterojunction structure, for outer raceway groove there are no pinch off, there are still electron gases in outer raceway groove, can rely on electronics negative electricity when making interior raceway groove pinch off
Lotus carries on the back potential barrier to constitute outer raceway groove, and reduction outer raceway groove energy band distortion solves the blocking of outer raceway groove.Theoretical modeling is found in outer raceway groove
Two-dimensional electron gas can be moved under electric-force gradient effect and shield the effect of electric-force gradient.It generates and carries on the back potential barrier than existing AlGaN
The middle better compensating action of single layer polarization charge is more effectively eliminated outer raceway groove and is blocked.Thus new electron gas outer fissure has been invented
Carry on the back potential barrier in road.This newly-designed electron gas back of the body barrier energy inhibits the distortion of heterostructure band under stronger minus gate voltage.To
It solves the current AlGaN back of the body big thermal resistances of potential barrier and is difficult to completely inhibit the difficult point of energy band distortion, be GaN hetero junction field effect pipes
Research opened up a new way.
Potential barrier design concept is carried on the back from electron gas, applicant is with self-editing self-consistent solution two dimension Poisson's equation and Schrodinger
The software of equation designs the heterojunction structure of inside and outside raceway groove to be separately optimized.The potential barrier of heterogenous junction layer in GaNHFET all uses at present
Al components are than the AlGaN layer less than 0.3.Although electron gas density and channel current can be increased than hetero-junctions by improving Al components,
But high Al components are lower than the pinch-off voltage of hetero-junctions, outer raceway groove electric-force gradient increases under strong minus gate voltage, can cause stronger
Outer raceway groove blocks.And low Al components increase the series resistance of outer raceway groove than barrier layer, reduce electron gas density, raceway groove electricity
The PAE and output power of stream, device.In addition, when Al components are relatively low, in order to generate enough electron gas densities and raceway groove electricity
Stream, it is necessary to retain the barrier layer thickness of enough interior raceway grooves.Reduce the difference of inside and outside channel heterostucture, it is difficult to design
Effective outer raceway groove electron gas carries on the back potential barrier.From the theory of the inside and outside raceway groove of independent design, applicant has selected higher Al component
The barrier layer of ratio is thinned interior raceway groove barrier layer using grooving technique, reduces interior raceway groove electron gas density, it is internal to improve gate electrode
The control dynamics of channel conduction increase device transconductance.In this way in the big grid voltage mobility scale of interior raceway groove radio frequency operation, outer raceway groove
Always retain enough electron gases to constitute back of the body potential barrier, eliminate outer raceway groove and block.Moreover, high Al components reduce outside than potential barrier again
The series resistance of raceway groove.Then self-consistent solution two dimension Poisson's equation and Schrodinger equation study the energy under various grid, drain voltage
Band distortion and raceway groove block, and complete the optimization design of inside and outside raceway groove.
Invention content
The purpose of the present invention is intended to design the outer raceway groove hetero-junctions of high electron gas density to enhance the Electronic Negative in outer raceway groove
Charge strengthens the electron gas back of the body potential barrier of outer raceway groove, makes still to remain with density of electronic gas appropriate in radio frequency negative half period in outer raceway groove,
Back of the body potential barrier is generated by electronics negative electrical charge, inhibits energy band distortion and the current blockage of outer raceway groove.And it is airtight using high electronics
The outer raceway groove of degree reduces outer raceway groove series resistance, improves device radio frequency operation efficiency and output power.Then grooving work is used
Skill is thinned interior raceway groove barrier layer, reduces interior raceway groove electron gas density, enables interior raceway groove pinch off under the grid voltage of setting, enhances grid
The control dynamics of the internal channel conduction of electrode improve pinch-off voltage and the mutual conductance of device.Then self-consistent solution two dimension Poisson's equation
And Schrodinger equation, the distortion of outer raceway groove energy band and raceway groove studied various grid voltages and leaked under pressure ring border block, optimization design go out in,
Two kinds of heterojunction structures of outer raceway groove.
Technical solution of the invention:A method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe,
The barrier layers such as growth GaN buffer layers, AlN, AlGaN, AlInN composition hetero-junctions is outer outside gate electrode to be formed successively on substrate
Raceway groove, then suitably thinned barrier layer constructs interior raceway groove hetero-junctions, then deposits barrier metal layer on interior raceway groove hetero-junctions and grid are made
Electrode.Make to remain enough electron gases in outer raceway groove in big radio frequency grid voltage mobility scale, come by the negative electrical charge of electron gas
Back of the body potential barrier is constructed, further includes following processing step：
（1）Radio-frequency voltage and electric current for device job requirement design the outer raceway groove heterojunction structure outside gate electrode, make
Enough electron gas densities are remained in outer raceway groove, carry out suppressor with the negative electrical charge of electron gas in radio frequency grid voltage mobility scale
Heterostructure band caused by electric-force gradient distorts in part radio frequency operation, constitutes electron gas and carries on the back potential barrier；
（2）Barrier layer thickness is thinned, deposits gate electrode metal layer, makes gate electrode.Control the barrier layer thickness of interior raceway groove
Device transconductance is improved, selected radio frequency grid voltage is made to change the break-make for being enough to control interior raceway groove, realizes efficiently penetrating for field-effect tube
Frequency works；
（3）Self-consistent solution two dimension Poisson's equation and Schrodinger equation study the outer raceway groove energy band under big radio frequency grid swing
Distortion and raceway groove block；The heterojunction structure of inside and outside raceway groove is adjusted, the minimum negative grid that energy band distortion and raceway groove can be inhibited to block is reduced
Pressure；The grid voltage and leakage pressure mobility scale for expanding device radio frequency operation, improve the anti-current avalanche ability of device；Optimization design simultaneously
The Potential Distributing of outer raceway groove reduces high field peak, it is ensured that outer raceway groove reaches required breakdown voltage.
Advantages of the present invention：With high Al components the energy that heterostructure band is cut out in grooving is improved than the heterojunction structure of barrier layer
Power constructs different heterojunction structures for inside and outside raceway groove.Thin high Al components enhance gate voltage to raceway groove electricity than potential barrier interior raceway groove
The control dynamics led reach the current density required by higher mutual conductance and device work.With in high density electron gas outer raceway groove
Electron gas negative electrical charge establish the back of the body potential barrier of outer raceway groove, thick outer raceway groove potential barrier reduces outer raceway groove electron gas density and changes with grid voltage
The variation of change, the energy band distortion and raceway groove for remaining suitable back of the body potential barrier to inhibit the dynamic lower outer raceway groove of big grid voltage, leakage buckling are stifled
Plug.And outer raceway groove series resistance is reduced with high density electron gas outer raceway groove, improves device radio frequency operation efficiency and output work
Rate.By the independent design of inside and outside channel heterostucture, to optimize the interaction of inside and outside raceway groove, weaken strong in outer raceway groove
Field peak, improves breakdown voltage, and outer raceway groove is inhibited to block, and reduces the performance degradation in current collapse and device radio frequency operation, improvement
The reliability of device expands the application range of device.Electron gas back of the body potential barrier had both avoided strain caused by AlGaN buffer layers, had
Performance and device reliability are transported, and eliminates the big thermal resistance band of AlGaN buffer layers conducive to improvement heterojunction material quality, electron gas
The disadvantage come, it is expected to potential barrier will be carried on the back and be really applied in the batch production of GaNHFET, the research of high-efficiency high-power GaNHFET is made
New step is stepped up in exploitation.
Specific implementation mode
A method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe, growth GaN is slow successively on substrate
It rushes the barrier layers such as layer, AlN, AlGaN, AlInN and constitutes hetero-junctions to form the outer raceway groove outside gate electrode, potential barrier is then suitably thinned
Layer constructs interior raceway groove hetero-junctions, then deposits barrier metal layer on interior raceway groove hetero-junctions and gate electrode is made.Big radio frequency grid voltage is set to change
Enough electron gases are remained in range in outer raceway groove, back of the body potential barrier is constructed by the negative electrical charge of electron gas, it is characterized in that also
It comprises the technical steps that：
（1）Radio-frequency voltage and electric current for device job requirement design the outer raceway groove heterojunction structure outside gate electrode, make
Enough electron gas densities are remained in outer raceway groove, carry out suppressor with the negative electrical charge of electron gas in radio frequency grid voltage mobility scale
Heterostructure band caused by electric-force gradient distorts in part radio frequency operation, constitutes electron gas and carries on the back potential barrier；
（2）Barrier layer thickness is thinned, deposits gate electrode metal layer, makes gate electrode.Control the barrier layer thickness of interior raceway groove
Device transconductance is improved, selected radio frequency grid voltage is made to change the break-make for being enough to control interior raceway groove, realizes efficiently penetrating for field-effect tube
Frequency works；
（3）Self-consistent solution two dimension Poisson's equation and Schrodinger equation study the outer raceway groove energy band under big radio frequency grid swing
Distortion and raceway groove block；The heterojunction structure of inside and outside raceway groove is adjusted, the minimum negative grid that energy band distortion and raceway groove can be inhibited to block is reduced
Pressure；The grid voltage and leakage pressure mobility scale for expanding device radio frequency operation, improve the anti-current avalanche ability of device；Optimization design simultaneously
The Potential Distributing of outer raceway groove reduces high field peak, it is ensured that outer raceway groove reaches required breakdown voltage.
Electron gas density in nitride heterojunction raceway groove trap thickens with barrier layer and is increased, the electron gas under thick barrier layer
Density gradually tends to be saturated.Current hetero-junctions optimization design is internal, outer raceway groove all only considers a kind of heterojunction structure.Often select
Barrier layer thickness of the electron gas density close to saturation.Therefore Al components are than there are certain association, energy bands between barrier layer thickness
The leeway cut out is little.This patent proposes the inside and outside two kinds of heterojunction structures of raceway groove of independent design, improves optimization design heterojunction structure
Dynamics.The relatively high barrier layer of Al components is selected to improve the energy band tailoring dynamics of interior raceway groove grooving first.Control interior raceway groove
Barrier layer thickness reaches required electron gas density and channel current, improves device transconductance.Then the high Al groups of outer raceway groove are thickened
Part increases outer raceway groove electron gas density than the thickness of barrier layer, reduces outer raceway groove electron gas density with the variation of surface potential, shape
Poor at larger inside and outside raceway groove pinch-off voltage, outer raceway groove still retains electron gas appropriate to constitute electricity after making interior raceway groove pinch off
Sub- gas carries on the back potential barrier, eliminates the distortion of outer raceway groove energy band and raceway groove blocks.Self-consistent solution two dimension Poisson's equation and Schrodinger equation come again
Calculate the heterostructure band under different electric-force gradients and minus gate voltage.The inside and outside channel heterostucture of optimization design makes device be leaked in height
Notable energy band distortion is not generated under pressure and strong minus gate voltage and raceway groove blocks.And carries out the repercussion study of inside and outside raceway groove, use
Electron gas density difference between two raceway grooves reduces raceway groove high field peak, improves breakdown voltage.To weaken current collapse, increase radio frequency
Electric current improves device PAE and output power, reduces the performance degradation in device radio frequency operation, improves reliability.
Field-effect tube is made using conventional device making technics.Photoetching and grooving technique are used after completing Ohmic contact
Interior raceway groove barrier layer is thinned to designed thickness, then the covering grid electrode on barrier layer, grooving field-effect tube is made.
Embodiment 1
Consider most common AlGaN/GaN hetero-junctions raceway groove trap.The Al0.35Ga0.65N potential barriers for selecting Al components relatively high
Layer increases grooving energy band tailoring dynamics.Interior raceway groove thickness 15nm, self-consistent solution Poisson's equation and Schrodinger equation is taken to obtain ditch
Road electron gas density is 9.48*1012cm-2, and pinch-off voltage is -3.2V.Choose the outer raceway groove barrier layer of 30nm thickness, the electricity acquired
Sub- air tightness is 1.245*1013cm-2, still there is the electricity of 7.16*1012cm-2 in the -3.2V grid voltage lower channels of interior raceway groove pinch off
Sub- air tightness, outer raceway groove ability pinch off under -7.7V grid voltages.Outer fissure when the electron gas density official post interior raceway groove pinch off of inside and outside raceway groove
Still there is stronger electron gas back of the body potential barrier in road.Under the strong electric field gradient of 3*1011V/cm2, outer raceway groove electron gas density increases,
Still retain the electron gas density of 5.27*1012cm-2 in outer raceway groove under the strong minus gate voltages of -7V.Self-consistent solution two dimension Poisson's equation and
Schrodinger equation proves that electron gas back of the body potential barrier remains to that energy band distortion and raceway groove is inhibited to block under minus gate voltage high in this way.To really
Guarantor can eliminate current collapse under B class operating conditions, realize high-efficiency high-power output.
Embodiment 2
Consideration improves the electron mobility of AlGaN/GaN hetero-junctions raceway groove traps with AlN insert layers.It selects
10nmAl0.35Ga0.65N/1nmAlN barrier layer constructs interior raceway groove hetero-junctions.Self-consistent solution Poisson's equation and Schrodinger equation
It is 1.15*1013cm-2 to obtain channel electrons air tightness, and pinch-off voltage is -3V.Choose 25nmAl0.35Ga0.65N/1nmAlN
Outer raceway groove barrier layer, the electron gas density acquired be 1.37*1013cm-2, the outer raceway groove under the -3V grid voltages of interior raceway groove pinch off
In still have the electron gas density of 8.12*1012cm-2, outer raceway groove ability pinch off under -7.6V grid voltages.The electronics of inside and outside raceway groove is airtight
Still there is the stronger electron gas back of the body potential barrier when spending official post interior raceway groove pinch off in outer raceway groove.Under the strong electric field gradient of 3*1011V/cm2,
Outer raceway groove electron gas density increases, and still retains the electron gas density of 3.5*1012cm-2 in outer raceway groove under the strong minus gate voltages of -8V.From
It is in harmony the two-dimentional Poisson's equation of solution and Schrodinger equation proves that electron gas back of the body potential barrier remains to inhibit energy band under minus gate voltage high in this way
Distortion and raceway groove block.So that it is guaranteed that current collapse can be eliminated under B class operating conditions, high-efficiency high-power output is realized.
Embodiment 3
Consider the high Al components of AlInN/GaN Lattice Matchings than hetero-junctions raceway groove trap.Select 5nmAl0.83In0.17N/
1nmAlN barrier layers construct interior raceway groove hetero-junctions.Self-consistent solution Poisson's equation and Schrodinger equation obtain channel electrons air tightness
For 2.72*1013cm-2, pinch-off voltage is -4V.The outer raceway groove barrier layer for choosing 15nmAl0.83In0.17N/1nmAlN, is acquired
Electron gas density be 3.26*1013cm-2, still have 1.95*1013cm-2's in -4V grid voltage the lower channels of interior raceway groove pinch off
Electron gas density, outer raceway groove ability pinch off under -10.6V grid voltages.Outside when the electron gas density official post interior raceway groove pinch off of inside and outside raceway groove
Still there is stronger electron gas back of the body potential barrier in raceway groove.Under the strong electric field gradient of 3*1011V/cm2, outer raceway groove electron gas density liter
Height still retains the electron gas density of 3.87*1012cm-2 under the strong minus gate voltages of -11V in outer raceway groove.Self-consistent solution two dimension Poisson side
Journey and Schrodinger equation prove that electron gas back of the body potential barrier remains to that energy band distortion and raceway groove is inhibited to block under minus gate voltage high in this way.From
And guarantee to eliminate current collapse under B class operating conditions, realize high-efficiency high-power output.
Claims (1)
1. a kind of method of manufacture electron gas back barrier gallium nitride hetero junction field effect pipe, it is characterized in that growing successively on substrate
GaN buffer layers, AlN, AlGaN, AlInN barrier layer constitute hetero-junctions to form the outer raceway groove outside gate electrode, and potential barrier is then thinned
Layer constructs interior raceway groove hetero-junctions, then deposits barrier metal layer on interior raceway groove hetero-junctions and gate electrode is made, and big radio frequency grid voltage is made to change
Electron gas is remained in range in outer raceway groove, back of the body potential barrier is constructed by the negative electrical charge of electron gas；
Its step includes that the electron mobility of AlGaN/GaN hetero-junctions raceway groove traps is improved using AlN insert layers, selects 10nm
Al0.35Ga0.65N/1nm AlN barrier layers construct interior raceway groove hetero-junctions；Utilize self-consistent solution two dimension Poisson's equation and Schrodinger
It is 1.15 × 10 that equation, which obtains channel electrons air tightness,13cm-2, pinch-off voltage is -3V；Choose 25nm Al0.35Ga0.65N /1nm
The outer raceway groove barrier layer of AlN, the electron gas density acquired are 1.37 × 1013cm-2, the outer fissure under the -3V grid voltages of interior raceway groove pinch off
Still have 8.12 × 10 in road12cm-2Electron gas density, outer raceway groove ability pinch off under -7.6V grid voltages；The electron gas of inside and outside raceway groove
Still there is the stronger electron gas back of the body potential barrier when density official post interior raceway groove pinch off in outer raceway groove；3 × 1011V/cm2Strong electric field gradient
Under, outer raceway groove electron gas density increases, and still retains 3.5 × 10 in outer raceway groove under the strong minus gate voltages of -8V12cm-2Electronics it is airtight
Degree；Self-consistent solution two dimension Poisson's equation and Schrodinger equation prove that electron gas back of the body potential barrier remains to inhibit under the high minus gate voltages of -8V
Energy band distorts and raceway groove blocks；So that it is guaranteed that current collapse can be eliminated under B class operating conditions, high-power output is realized.
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| CN102064108A (en) * | 2010-11-12 | 2011-05-18 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing medium/nitride composite structure enhanced field effect transistor |
| US8124505B1 (en) * | 2010-10-21 | 2012-02-28 | Hrl Laboratories, Llc | Two stage plasma etching method for enhancement mode GaN HFET |
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| US8124505B1 (en) * | 2010-10-21 | 2012-02-28 | Hrl Laboratories, Llc | Two stage plasma etching method for enhancement mode GaN HFET |
| CN102064108A (en) * | 2010-11-12 | 2011-05-18 | 中国电子科技集团公司第五十五研究所 | Method for manufacturing medium/nitride composite structure enhanced field effect transistor |
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