CN104269433A - Gallium-nitride-based enhancement type heterojunction field effect transistor with composite channel layer - Google Patents
Gallium-nitride-based enhancement type heterojunction field effect transistor with composite channel layer Download PDFInfo
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- CN104269433A CN104269433A CN201410454173.0A CN201410454173A CN104269433A CN 104269433 A CN104269433 A CN 104269433A CN 201410454173 A CN201410454173 A CN 201410454173A CN 104269433 A CN104269433 A CN 104269433A
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- 239000002131 composite material Substances 0.000 title claims abstract description 63
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 50
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 230000005669 field effect Effects 0.000 title abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 154
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 77
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 77
- 230000004888 barrier function Effects 0.000 claims abstract description 71
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 75
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 25
- 238000000576 coating method Methods 0.000 claims description 25
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 21
- 229940044658 gallium nitrate Drugs 0.000 claims description 18
- 229910017083 AlN Inorganic materials 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 230000010287 polarization Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 abstract 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
- 238000005036 potential barrier Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Junction Field-Effect Transistors (AREA)
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Abstract
The invention relates to the technology of semiconductors, and provides a gallium-nitride-based enhancement type heterojunction field effect transistor with a composite channel layer. The problem that an existing gallium-nitride-based heterojunction field effect transistor is a depletion type component, but there is no relatively reliable enhancement type component is solved. According to the technical scheme, compared with an existing GaN MIS-HFET component, an aluminum nitride back barrier layer is arranged between an aluminum indium gallium nitrogen buffer layer and the channel layer of the gallium-nitride-based enhancement type heterojunction field effect transistor with the composite channel layer, and the channel layer is composite. The gallium-nitride-based enhancement type heterojunction field effect transistor with the composite channel layer has the advantages that reliability is improved, and repeatability is high.
Description
Technical field
The present invention relates to semiconductor technology, particularly gallium nitride (GaN) radical heterojunction field effect transistor strain n channel metal oxide semiconductor field effect transistor (NMOSFET).
Background technology
Gallium nitride (GaN) radical heterojunction field effect transistor (HFET) has that energy gap is large, critical breakdown electric field is high, electron saturation velocities is high, the excellent specific property such as good heat conductivity, radioresistance and good chemical stability, simultaneously gallium nitride material can form the two-dimensional electron gas heterojunction raceway groove with high concentration and high mobility with the material such as aluminum gallium nitride (AlGaN), therefore being specially adapted to high pressure, high-power and high temperature application, is one of transistor of applied power electronics most potentiality.
Prior art common GaN HFET (gallium nitride radical heterojunction field effect transistor) structure, mainly comprise substrate, gallium nitride (GaN) resilient coating, gallium nitride channel layer, source electrode, drain and gate that aluminum gallium nitride (AlGaN) barrier layer and aluminum gallium nitride (AlGaN) barrier layer are formed, wherein source electrode and drain electrode form ohmic contact with aluminum gallium nitride (AlGaN) barrier layer, and grid and aluminum gallium nitride (AlGaN) barrier layer form Schottky contacts.But for common GaN HFET, due to two-dimensional electron gas (2DEG) raceway groove that existence natural between AlGaN/GaN heterostructure is very strong, so device is in conducting state under zero-bias, be depletion device.And there is certain limitation in the application of depletion device, depletion device is turned off and must add negative voltage bias at grid, which increase power consumption and the complexity of circuit, simultaneously when abnormal power-down, device is still in conducting state, reduces the fail safe of system.So use enhancement device can reduce system power dissipation and complexity, promote fail safe, make gallium nitrate based HEMT can be applied to high-power switch device and circuit and digit complement logical integrated circuit, have great application prospect.
Mainly adopt with the following method to realize gallium nitride enhancement device in prior art:
Use thin barrier layer technology [M.A.Khan, Q.Chen, C.J.Sun, et al.Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors [J], Applied Physics Letters, 1996,68, (4), pp.514-516].2DEG concentration in raceway groove can be reduced by the Al component and thickness that reduce AlGaN potential barrier, advantage does not carry out etching to grid lower area to cause process-induced damage, thus Schottky characteristic is better, grid leakage current is lower, but the deficiency of this method is the thickness due to entirety reduction barrier layer, the 2DEG concentration of whole channel region is lower, and the saturation current of device is less, and threshold voltage can not realize too high simultaneously.
Use slot grid structure [W.Sato, Y.Takata, M.Kuraguchi, et al.Recessed-gate strcuture approach toward normally-off high-voltage AlGaN/GaN hemt for power electronics applications [J], IEEE Trans.Electron Devices, 2006,53, (2), pp.356-362].AlGaN potential barrier under grid is etched away a part, and when barrier layer is thinned to a certain degree, under grid, 2DEG density will be reduced to negligible degree, and the 2DEG density of source, drain region is constant.The saturation current of such device, mutual conductance and threshold voltage are all better than thin barrier structure, but the Accuracy control of groove grid technique to etching depth is poor, causes process repeatability poor, and etching can cause mechanical injuries simultaneously, and grid leak electricity is increased.
Under using grid, fluorine ion (F-) injects [Y.Cai, Y.Zhou, K.J.Chen, et al.High performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment [J], IEEE Electron Device Letters, 2005,26, (7), pp.435-437].F-ion has very strong elecrtonegativity, be injected into the effective barrier height that grid lower area can improve Schottky gate, exhaust 2DEG under grid, technique easily realizes and repeatable high, but it is good not to inject F-ion stability, there is impact to the high pressure of device and high temperature reliability.
Use P type GaN grid structure [T.O.Hilt, F.Brunner, E.CHO, et al.Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer [C] .23rd International Symposium on Power Semiconductor Devices and ICs, May 23-26,2011.Piscataway NJ, USA:IEEE, 2011.].P type GaN material is introduced under grid and between AlGaN potential barrier, grid metal and P type GaN form ohmic contact, the doping of P type can improve and can be with on the one hand, exhaust channel electrons when grid voltage is 0 and realize enhancement mode characteristic, cavity energy on the other hand in P type GaN material injects raceway groove, play conductance modulation effect, while improving drain current, keep less gate current.But the P type acceptor Mg activation energy of GaN material is very high, high-quality P type GaN material is difficult to realize, and P type doping simultaneously also can impact reliability of material.
Summary of the invention
The object of the invention is to overcome current gallium nitride radical heterojunction field effect transistor is depletion device, and does not have a kind of shortcoming of enhancement device relatively reliably, provides a kind of gallium nitrate based enhancement mode HFET with composite channel layer.
The present invention solves its technical problem, the technical scheme adopted is, there is the gallium nitrate based enhancement mode HFET of composite channel layer, comprise substrate 101, aluminium indium gallium nitrogen resilient coating 102, aluminium indium gallium nitrogen barrier layer 104, insulating medium layer 105, source electrode 106, drain electrode 107 and grid 108, described aluminium indium gallium nitrogen resilient coating 102 is arranged on above substrate 101, insulating medium layer 105, source electrode 106 and drain electrode 107 are arranged on above aluminium indium gallium nitrogen barrier layer 104, source electrode 106 and drain electrode 107 form ohmic contact with aluminium indium gallium nitrogen barrier layer 104 respectively, grid 108 is arranged on above insulating medium layer 105, Schottky contacts is formed with insulating medium layer 105, it is characterized in that, also comprise the aluminium nitride back of the body barrier layer 201 be arranged on above aluminium indium gallium nitrogen resilient coating 102, and the composite channel layer be arranged on above aluminium nitride back of the body barrier layer 201, aluminium indium gallium nitrogen barrier layer 104 is arranged on above composite channel layer, described composite channel layer is made up of gallium nitride raceway groove 203 and aluminium indium gallium nitrogen raceway groove 202, described aluminium indium gallium nitrogen raceway groove 202 is positioned at position immediately below grid in composite channel layer, in composite channel layer, all the other positions are gallium nitride raceway groove 203.
Concrete, the thickness range of described aluminium nitride back of the body barrier layer 201 is 1nm to 10nm.
Further, described aluminium indium gallium nitrogen resilient coating 102 and aluminium indium gallium nitrogen barrier layer 104 are respectively Al
xin
yga
zn resilient coating and Al
xin
yga
zn barrier layer, wherein, x+y+z=1,0≤x≤1,0≤y≤1,0≤z≤1.
Concrete, described aluminium indium gallium nitrogen raceway groove 202 is Al
bin
cga
dn raceway groove, wherein, b+c+d=1,0≤b≤1,0≤c≤1,0≤d≤1.
Further, the width of described aluminium indium gallium nitrogen raceway groove 202 is less than the distance between source electrode to drain electrode.
Concrete, described insulating medium layer 105 is made up of silicon dioxide and/or aluminium oxide and/or silicon nitride.
Further, the thickness range of described substrate is 0 to 100 μm, the thickness range of described aluminium indium gallium nitrogen resilient coating 102 is 0.5 μm to 8 μm, and the thickness range of described composite channel layer is 10nm to 1 μm, and the thickness range of described aluminium indium gallium nitrogen barrier layer 104 is 1nm to 100nm.
Concrete, the thickness of described composite channel layer is greater than the thickness of aluminium indium gallium nitrogen barrier layer 104, the Al in described aluminium indium gallium nitrogen barrier layer
xin
yga
zn material is equal with the polarization intensity of aluminium indium gallium nitrogen raceway groove in composite channel layer, and polarization can be cancelled out each other.
The invention has the beneficial effects as follows, by the above-mentioned gallium nitrate based enhancement mode HFET with composite channel layer, can find out, it is by introducing composite channel layer, the polarization of aluminium indium gallium nitrogen raceway groove and aluminium indium gallium nitrogen barrier layer in composite channel layer is cancelled out each other, play the effect exhausting 2DEG, thus realize enhancement device, it is simple that this device realizes technique, all technique all completes under front technique, compare thin barrier layer construction and can reach higher threshold voltage and maximum saturation leakage current, simultaneously without the need to doping, avoid the impacts such as the defect that doping brings.Compare the rear process implementation method such as fluorine ion injection, recessed grid structure, avoid the damage to the device after completing, improve reliability, and repeatable high.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing GaN MIS-HFET device;
Fig. 2 is the structural representation with the gallium nitrate based enhancement mode HFET of composite channel layer of the present invention;
Fig. 3 is that the conduction band of device in device and Fig. 2 in Fig. 1 contrasts schematic diagram;
Fig. 4 is the transfer characteristic schematic diagram of device in Fig. 1;
Fig. 5 is the transfer characteristic schematic diagram of device in Fig. 2;
Fig. 6 is the output characteristic schematic diagram of device in Fig. 2;
Wherein, 101 is substrate, and 102 is aluminium indium gallium nitrogen resilient coating, and 103 is gallium nitride channel layer, 104 is aluminium indium gallium nitrogen barrier layer, and 105 is insulating medium layer, and 106 is source electrode, and 107 is drain electrode, 108 is grid, and 201 is aluminium nitride back of the body barrier layer, and 202 is aluminium indium gallium nitrogen raceway groove, and 203 is gallium nitride raceway groove.
Embodiment
Below in conjunction with drawings and Examples, describe technical scheme of the present invention in detail.
The structural representation with the gallium nitrate based enhancement mode HFET of composite channel layer of the present invention as shown in Figure 2, it comprises substrate 101, aluminium indium gallium nitrogen resilient coating 102, aluminium nitride back of the body barrier layer 201, composite channel layer, aluminium indium gallium nitrogen barrier layer 104, insulating medium layer 105, source electrode 106, drain electrode 107 and grid 108, wherein, aluminium indium gallium nitrogen resilient coating 102 is arranged on above substrate 101, aluminium nitride back of the body barrier layer 201 is arranged on above aluminium indium gallium nitrogen resilient coating 102, composite channel layer is arranged on above aluminium nitride back of the body barrier layer 201, aluminium indium gallium nitrogen barrier layer 104 is arranged on above composite channel layer, insulating medium layer 105, source electrode 106 and drain electrode 107 are arranged on above aluminium indium gallium nitrogen barrier layer 104, source electrode 106 and drain electrode 107 form ohmic contact with aluminium indium gallium nitrogen barrier layer 104 respectively, grid 108 is arranged on above insulating medium layer 105, Schottky contacts is formed with insulating medium layer 105, composite channel layer is made up of gallium nitride raceway groove 203 and aluminium indium gallium nitrogen raceway groove 202, aluminium indium gallium nitrogen raceway groove 202 is positioned at position immediately below grid in composite channel layer, in composite channel layer, all the other positions are gallium nitride raceway groove 203.
Embodiment
See Fig. 1, for the structural representation of existing GaN MIS-HFET device, it comprises substrate 101, aluminium indium gallium nitrogen resilient coating 102, gallium nitride channel layer 103, aluminium indium gallium nitrogen barrier layer 104, the grid 108 that the source electrode 106 that insulating medium layer 105 and aluminium indium gallium nitrogen barrier layer 104 are formed, drain electrode 107 and insulating medium layer 105 are formed, wherein source electrode 106 and drain electrode 107 form ohmic contact with aluminium indium gallium nitrogen barrier layer 104, and grid 108 and insulating medium layer 105 form Schottky contacts.
See Fig. 2, for the structural representation with the gallium nitrate based enhancement mode HFET of composite channel layer of the present invention, it comprises substrate 101, aluminium indium gallium nitrogen resilient coating 102, aluminium nitride back of the body barrier layer 201, composite channel layer, aluminium indium gallium nitrogen barrier layer 104, insulating medium layer 105, source electrode 106, drain electrode 107 and grid 108, wherein, aluminium indium gallium nitrogen resilient coating 102 is arranged on above substrate 101, aluminium nitride back of the body barrier layer 201 is arranged on above aluminium indium gallium nitrogen resilient coating 102, composite channel layer is arranged on above aluminium nitride back of the body barrier layer 201, aluminium indium gallium nitrogen barrier layer 104 is arranged on above composite channel layer, insulating medium layer 105, source electrode 106 and drain electrode 107 are arranged on above aluminium indium gallium nitrogen barrier layer 104, source electrode 106 and drain electrode 107 form ohmic contact with aluminium indium gallium nitrogen barrier layer 104 respectively, grid 108 is arranged on above insulating medium layer 105, Schottky contacts is formed with insulating medium layer 105, composite channel layer is made up of gallium nitride raceway groove 203 and aluminium indium gallium nitrogen raceway groove 202, aluminium indium gallium nitrogen raceway groove 202 is positioned at position immediately below grid in composite channel layer, in composite channel layer, all the other positions are gallium nitride raceway groove 203.
Its main processing step is on the substrate 101 with MOCVD successively growing gallium nitride (GaN) resilient coating 102, aluminium nitride (AlN) carries on the back barrier layer 201, then carry on the back on barrier layer 201 at aluminium nitride (AlN) and first grow one deck gallium nitride channel layer 103, etch away from gallium nitride channel layer 103 again and pre-set part immediately below grid 108, and grow aluminium indium gallium nitrogen (Al
xin
yga
zn) raceway groove 202, forms composite channel layer with remaining gallium nitride raceway groove 203, composite channel layer grows successively aluminium indium gallium nitrogen barrier layer (Al
xin
yga
zn barrier layer) 104, insulating medium layer 105, finally etches away the source and drain areas of insulating medium layer, barrier layer 104 is formed source electrode 106 and the drain electrode 107 of ohmic contact, insulating medium layer 105 grows the grid 108 of Schottky contacts.
Wherein, the thickness range of aluminium nitride back of the body barrier layer 201 is 1nm to 10nm, the thickness range of substrate is 0 to 100 μm, the thickness range of aluminium indium gallium nitrogen resilient coating 102 is 0.5 μm to 8 μm, the thickness range of composite channel layer is 10nm to 1 μm, and the thickness range of described aluminium indium gallium nitrogen barrier layer 104 is 1nm to 100nm.Aluminium indium gallium nitrogen resilient coating 102 and aluminium indium gallium nitrogen barrier layer 104 are respectively Al
xin
yga
zn resilient coating and Al
xin
yga
zn barrier layer, wherein, x+y+z=1,0≤x≤1,0≤y≤1,0≤z≤1, aluminium indium gallium nitrogen raceway groove 202 is Al
bin
cga
dn raceway groove, wherein, b+c+d=1,0≤b≤1,0≤c≤1,0≤d≤1, the width of aluminium indium gallium nitrogen raceway groove 202 is less than the distance between source electrode to drain electrode.The thickness of composite channel layer is greater than the thickness of aluminium indium gallium nitrogen barrier layer 104, the Al in aluminium indium gallium nitrogen barrier layer
xin
yga
zn material is equal with the polarization intensity of aluminium indium gallium nitrogen raceway groove in composite channel layer, and polarization can be cancelled out each other, and meets the Al in aluminium indium gallium nitrogen barrier layer
xin
yga
zthe energy gap of N material must be greater than the Al in aluminium indium gallium nitrogen raceway groove
ain
bga
cn material.Insulating medium layer 105 is made up of silicon dioxide and/or the insulating material such as aluminium oxide and/or silicon nitride.It is insulating material that aluminium nitride (AlN) carries on the back barrier layer, plays the effect improving charge carrier confinement, main channel carrier can not be leaked electricity and conducting by resilient coating under OFF state.
Below the gallium nitrate based enhancement mode HFET with composite channel layer shown in Fig. 2 and existing GaN MIS-HFET device (Fig. 1) are contrasted; Device architecture parameter is to provide in table 1.
Table 1 device simulation structural parameters
Is (in upper table, cushioning layer material changed in order to whether gallium nitride wrong? difference is caused) with the application's claim and accompanying drawing
Fig. 3 be in Fig. 1 in device and Fig. 2 device (adopting the parameter of above-mentioned table 1) under three structure grid along the conduction band comparison diagram in vertical-channel direction, at the bottom of the channel conduction band of visible existing GaN MIS-HFET device all below Fermi level, show as open type device, and this example provides to have at the bottom of the composite channel conduction band of the gallium nitrate based enhancement mode HFET of composite channel layer more than Fermi level, illustrate that the polarization intensity of aluminium indium gallium nitrogen barrier layer 104 and composite channel layer offsets, normally-off work can be realized.Meanwhile, Al is regulated
xin
yga
zin N raceway groove 202, each component ratio can regulate height at the bottom of composite channel layer conduction band to reach the effect of adjusting threshold voltage.And 2DEG generally 2 ~ 3 orders of magnitude less of tap drain road [X.Kong in the secondary raceway groove formed after aluminium nitride back of the body potential barrier 201, K.Wei, G.Liu, et al.Improved performance of highly scaled AlGaN/GaN high-electron-mobility transistors using an AlN back barrier [J], Applied Physics Express, 2013,6,051201, pp.1-3], little on devices function impact.
Fig. 4 is the transfer characteristic curve schematic diagram of device in Fig. 1, its device architecture carries on the back barrier layer 201 and composite channel layer except not having aluminium nitride (AlN), all the other structures are all consistent with the GaN MIS-HFET with composite channel provided by the invention, threshold voltage is-9V, is depletion device.Fig. 5 is the transfer characteristic curve schematic diagram of device in Fig. 2 (i.e. device of the present invention), compare device in Fig. 1, after introducing composite channel layer and aluminium nitride back of the body potential barrier 201, threshold voltage has brought up to 1.2V from-9V, achieves enhancement device.Fig. 6 is the output characteristic schematic diagram of device in Fig. 2, and visible maximum leakage current reaches 240mA/mm, meets the needs of application.
The above is only preferred embodiment of the present invention, not does any pro forma restriction to the present invention, and every any simple modification, equivalent variations done above embodiment according to the technical spirit of originally/invention, all falls within protection scope of the present invention.
Claims (8)
1. there is the gallium nitrate based enhancement mode HFET of composite channel layer, comprise substrate, aluminium indium gallium nitrogen resilient coating, aluminium indium gallium nitrogen barrier layer, insulating medium layer, source electrode, drain electrode and grid, described aluminium indium gallium nitrogen resilient coating is arranged on types of flexure, insulating medium layer, source electrode and drain electrode are arranged on above aluminium indium gallium nitrogen barrier layer, source electrode and drain electrode form ohmic contact with aluminium indium gallium nitrogen barrier layer respectively, grid is arranged on above insulating medium layer, Schottky contacts is formed with insulating medium layer, it is characterized in that, also comprise the aluminium nitride back of the body barrier layer be arranged on above aluminium indium gallium nitrogen resilient coating, and the composite channel layer be arranged on above aluminium nitride back of the body barrier layer, aluminium indium gallium nitrogen barrier layer is arranged on above composite channel layer, described composite channel layer is made up of gallium nitride raceway groove and aluminium indium gallium nitrogen raceway groove, described aluminium indium gallium nitrogen raceway groove is positioned at position immediately below grid in composite channel layer, in composite channel layer, all the other positions are gallium nitride raceway groove.
2. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 1, it is characterized in that, the thickness range of described aluminium nitride back of the body barrier layer is 1nm to 10nm.
3. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 1, it is characterized in that, described aluminium indium gallium nitrogen resilient coating and aluminium indium gallium nitrogen barrier layer are respectively Al
xin
yga
zn resilient coating and Al
xin
yga
zn barrier layer, wherein, x+y+z=1,0≤x≤1,0≤y≤1,0≤z≤1.
4. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 1, it is characterized in that, described aluminium indium gallium nitrogen raceway groove is Al
bin
cga
dn raceway groove, wherein, b+c+d=1,0≤b≤1,0≤c≤1,0≤d≤1.
5. according to claim 1 or 2 or 3 or 4, have the gallium nitrate based enhancement mode HFET of composite channel layer, it is characterized in that, the width of described aluminium indium gallium nitrogen raceway groove is less than the distance between source electrode to drain electrode.
6. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 1, the thickness range of described composite channel layer is 10nm to 1 μm, and the thickness range of described aluminium indium gallium nitrogen barrier layer is 1nm to 100nm.
7. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 6, it is characterized in that, the thickness of described composite channel layer is greater than the thickness of aluminium indium gallium nitrogen barrier layer, the Al in described aluminium indium gallium nitrogen barrier layer
xin
yga
zn material is equal with the polarization intensity of aluminium indium gallium nitrogen raceway groove in composite channel layer, and polarization can be cancelled out each other.
8. have the gallium nitrate based enhancement mode HFET of composite channel layer according to claim 6, it is characterized in that, described insulating medium layer is made up of silicon dioxide and/or aluminium oxide and/or silicon nitride.
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