CN104576357B - Gas injection unit and Equipment for Heating Processing comprising the gas injection unit - Google Patents

Gas injection unit and Equipment for Heating Processing comprising the gas injection unit Download PDF

Info

Publication number
CN104576357B
CN104576357B CN201410563556.1A CN201410563556A CN104576357B CN 104576357 B CN104576357 B CN 104576357B CN 201410563556 A CN201410563556 A CN 201410563556A CN 104576357 B CN104576357 B CN 104576357B
Authority
CN
China
Prior art keywords
storage tank
gas injection
gas
channel
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410563556.1A
Other languages
Chinese (zh)
Other versions
CN104576357A (en
Inventor
梁相熙
李基雄
严泰骏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AP Cells Inc
Original Assignee
AP Cells Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AP Cells Inc filed Critical AP Cells Inc
Publication of CN104576357A publication Critical patent/CN104576357A/en
Application granted granted Critical
Publication of CN104576357B publication Critical patent/CN104576357B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

A kind of gas injection unit and a kind of Equipment for Heating Processing comprising gas injection unit are provided.Be configured to include by the gas injection unit on inert gas injection to substrate: gas injection block, gas injection block has gas injection space, inert gas passes through gas injection space, and gas injection block has injection slit, injection slit is defined in downside, with the wire shaped extended in one direction of the substrate, and inert gas is allowed to pass through injection slit, to guide inert gas towards substrate；And gas supply part, gas supply part includes the first storage tank, first storage tank extends in the direction of the extension of the injection slit, and has in the direction of the center of the first tank from two of the first storage tank and hold the internal diameter being incrementally decreased, inert gas is to be introduced through both ends, gas supply part arranges in the gas injection block and is connected to gas injection space, and inert gas is supplied in gas injection space.

Description

Gas injection unit and Equipment for Heating Processing comprising the gas injection unit
Technical field
The present invention relates to a kind of gas injection unit and a kind of Equipments for Heating Processing comprising the gas injection unit, and And more specifically it relates to it is a kind of comprising gas injection unit to prevent substrate to be exposed to the Equipment for Heating Processing of oxygen or impurity.
Background technique
In the manufacture of liquid crystal displays and optoelectronic devices, it is related to for making amorphous polycrystal film (for example, amorphous Polysilicon membrane) crystallization heat treatment process.Herein, if glass is used as the substrate, then can be made by using laser Amorphous polycrystal film crystallization.However, as amorphous polycrystal film and oxygen (O2) reaction when, amorphous polycrystal film is oxidable To generate sull, and also it is contaminated by impurities or changes property.
Fig. 1 is the schematic diagram according to the laser thermal processing apparatus of the relevant technologies.Referring to Fig. 1, according to the laser of the relevant technologies Equipment for Heating Processing includes: processing chamber 10, and processing chamber 10 has the space for wherein handling substrate 1；Platform 2, platform is arranged in Substrate 1 to be placed on platform in processing chamber 10, and shift in the direction of the process；Transmissive window 40, transmissive window 40 Arrangement is in the upper part of the process chamber to allow laser 8 to penetrate transmissive window 40；And light source 30, light source 30 are arranged in transmission Above window and it is arranged in outside processing chamber 10 to export laser 8.According to laser thermal processing apparatus, what is exported from light source 30 swashs Light 8 can pass through transmissive window 40, and then be irradiated on the substrate 1 just to move horizontally.
If the region of the illuminated laser 8 of substrate 1 is exposed to oxygen, when being deposited on the top surface of substrate 1 Polycrystal film 11 crystallize when, polycrystal film can not be changed to crystalline silicon, but be oxidized.Similarly, when in processing chamber 10 Dopants penetration into the upper part of substrate 1 when, film 11 can be contaminated by impurities or change property.
In order to solve above-mentioned limitation, the gas note for the substrate proximity injection inert gas in illuminated laser beam is installed Unit is penetrated, to generate inert atmosphere above the laser-illuminated substrate, the top surface of substrate is thus prevented to be exposed to oxygen. For example, as disclosed in Korean patent disclosure the 2013-0000315th, laser processing apparatus includes for will be linear Laser beam is irradiated to the light source on substrate, and for discharging inert gas towards substrate to produce above the local area of the substrate The slit gas injection hole of raw gas atmosphere.
However, when inert gas to be supplied in the slit gas injection hole lengthily extended in one direction, It is likely difficult in the entire area that inert gas is uniformly supplied to gas injection holes.As a result, inert gas may be unevenly It is injected into the whole region of the substrate of illuminated laser, and therefore, the part of the whole region of substrate may expose oxygen supply Gas and impurity.
[existing technical literature]
[patent document]
(patent document 1) Korean patent disclosure the 2013-0000315th
Summary of the invention
The present invention provide it is a kind of for by inert gas injection to substrate to prevent substrate to be exposed to oxygen and impurity Gas injection unit and a kind of Equipment for Heating Processing comprising the gas injection unit.
The present invention also provides a kind of for inert gas to be uniformly injected to the gas injection unit on substrate, Yi Jiyi Kind includes the Equipment for Heating Processing of the gas injection unit.
According to one exemplary embodiment, a kind of to be configured to the gas injection unit packet on inert gas injection to substrate Contain: gas injection block, gas injection block have gas injection space, and inert gas passes through gas injection space, and gas is infused Penetrating block has injection slit, and injection slit is defined in downside, with the wire shaped extended in one direction of the substrate, and Inert gas is allowed to pass through injection slit, to guide inert gas towards substrate；And gas supply part, gas supply department Part includes the first storage tank, and the first storage tank extends in the direction of the extension of the injection slit, and in the direction of the center of the first tank With the internal diameter being incrementally decreased is held from two of the first storage tank, inert gas is to be introduced through both ends, gas supply department Part is arranged in the gas injection block and is connected to gas injection space, and inert gas is supplied in gas injection space.
It is a kind of to be configured to the gas injection unit on inert gas injection to substrate according to another exemplary embodiment Include: gas injection block, gas injection block have gas injection space, and inert gas passes through gas injection space, and gas Injection block has injection slit, and injection slit is defined in downside, with the wire shaped extended in one direction of the substrate, and And inert gas is allowed to pass through injection slit, to guide inert gas towards substrate；And gas supply part, gas supply Component has multiple storage tanks, and multiple storage tanks arrange in the direction of the gas injection space in the gas injection block, and has that Inert gas is supplied in gas injection space by this different volume, gas supply part, wherein with relatively smaller volume Storage tank is arranged adjacent to gas injection space.
Gas supply part may include: the second storage tank, and the second storage tank is arranged in the gas injection block in the first storage tank Extend on extending direction, the second storage tank is arranged between the first storage tank and gas injection space, and is had less than the first storage tank Volume volume；And third storage tank, third storage tank arrangement is in the gas injection block on the extending direction of the second storage tank Extend, third storage tank is arranged between the second storage tank and gas injection space, and has the body of the volume less than the second storage tank Product.
Multiple storage tanks may include: the first storage tank, and the first storage tank extends in the direction of the extension of the injection slit, and the first storage tank exists Have on the center position of first storage tank from two of the first storage tank and hold the internal diameter being incrementally decreased, inert gas is by two End is introduced into；Second storage tank, the second storage tank arrangement on the extending direction of the first storage tank in the gas injection block to extend, and second Storage tank is arranged between the first storage tank and gas injection space, and has the volume of the volume less than the first storage tank；And the Three storage tanks, third storage tank arrange that third storage tank is arranged in the gas injection block to extend on the extending direction of the second storage tank Between second storage tank and gas injection space, and there is the volume of the volume less than the second storage tank.
Gas injection unit can further include feed tube, and feed tube is connected in two ends of the first storage tank Each, inert gas is supplied in the first storage tank.
Gas supply part may include: interface channel, and the second storage tank is connected to third storage tank, interface channel by interface channel It is less than the volume of the volume of each of the second storage tank and third storage tank；And discharge slots, discharge slots, which have, to be connected The other end for being connected to an end of third storage tank and being connected to the inside of gas injection space, discharge slots, which have, is less than third The volume of the volume of each of storage tank and interface channel.
First storage tank may include: first passage, and first passage has in the direction of the center of the first channel from first passage Two hold the width that is incrementally decreased, inert gas is to be introduced through both ends；Second channel, second channel are logical first Extend on the extending direction in road, second channel is arranged between the first channel and the second tank；And third channel, third channel Extend in the direction of the extension of the second channel, third channel is arranged between the second channel and the second tank, wherein first passage There can be one that the is connected to first gas supply pipe other end for holding and being connected to second gas supply pipe.
First storage tank may include: first divide component, first divide component in the gas injection block with gas injection block Internal side wall separates, and the first division component has two ends for dividing component from first in the center direction of the first partition member The width gradually increased；Second divides component, and second divides component arrangement between the second tank and the first partition member, the Two division components are separated with the first division component；And third divides component, third divides component and is arranged in the second storage tank and the Two divide between component, and third divides component and is separated from the second partition member, and wherein first passage can correspond to the first division structure The space defined between part and the internal side wall of gas injection block, second channel can correspond to the first division component and second and divide The space defined between component, and third channel can correspond to the second division component and third divides the sky defined between component Between.
First division component can have multiple first intercommunicating pores, the extension side that multiple first intercommunicating pores divide component first Arrangement upwards, and be separated from each other, to allow first passage to be connected with the second channel, the second division component can have multiple second Intercommunicating pore, multiple second intercommunicating pores arrange on the extending direction of the second division component, and are separated from each other, to allow second to lead to Road is connected to third channel, and third division component can have multiple third connecting holes, and multiple third connecting holes are drawn in third Divide on the extending direction of component and arrange, and be separated from each other, to allow third channel to be connected to the second storage tank.
The number of second intercommunicating pore is smaller than the number of the first intercommunicating pore, and the number in third connecting hole is smaller than second The number of intercommunicating pore.
Each of second intercommunicating pore can have the internal diameter of the internal diameter less than each of the first intercommunicating pore, and Each of tee joint hole can have the internal diameter of the internal diameter less than each of the second intercommunicating pore.
According to yet another exemplary embodiment, a kind of Equipment for Heating Processing includes: processing chamber has substrate in the process chamber Processing space；Light source, light source are arranged outside the process chamber to export light for processing a substrate；Light irradiation unit, light irradiation Unit is arranged in processing chamber, and light irradiation unit has inner space, passes through inner space from the light of light source output；And gas Body injecting unit, gas injection unit arrangement under the light irradiation unit and arrange between the light irradiation unit and the substrate, with By on inert gas injection to substrate, wherein gas injection unit includes: gas injection block, and gas injection block has gas injection Space, inert gas passes through gas injection space, and gas injection block has injection slit, and injection slit is defined in downside In, with the wire shaped extended in one direction of the substrate, and allow inert gas pass through injection slit, so as to towards lining Bottom guides inert gas；And gas supply part, gas supply part include the first storage tank, the first storage tank is in injection slit Extend on extending direction, and in having be incrementally decreased from two of the first storage tank ends in the direction of the center of the first tank Diameter, inert gas are to be introduced through both ends, and gas supply part arranges in the gas injection block and is connected to gas note Space is penetrated, inert gas is supplied in gas injection space.
According to yet another exemplary embodiment, a kind of Equipment for Heating Processing includes: processing chamber has substrate in the process chamber Processing space；Light source, light source are arranged outside the process chamber to export light for processing a substrate；Light irradiation unit, light irradiation Unit is arranged in processing chamber, and light irradiation unit has inner space, passes through inner space from the light of light source output；And gas Body injecting unit, gas injection unit arrangement under the light irradiation unit and arrange between the light irradiation unit and the substrate, with By on inert gas injection to substrate, wherein gas injection unit includes: gas injection block, and gas injection block has gas injection Space, inert gas passes through gas injection space, and gas injection block has injection slit, and injection slit is defined in downside In, with the wire shaped extended in one direction of the substrate, and allow inert gas pass through injection slit, so as to towards lining Bottom guides inert gas；And gas supply part, gas supply part have multiple storage tanks, multiple storage tanks are in gas injection block It inside arranges in the direction of the gas injection space, and there is volume different from each other, gas supply part supplies inert gas It should be into gas injection space, wherein the storage tank with relatively smaller volume is arranged adjacent to gas injection space.
Gas supply part may include: the second storage tank, and the second storage tank is arranged in the gas injection block in the first storage tank Extend on extending direction, the second storage tank is arranged between the first storage tank and gas injection space, and is had less than the first storage tank Volume volume；And third storage tank, third storage tank arrangement is in the gas injection block on the extending direction of the second storage tank Extend, third storage tank is arranged between the second storage tank and gas injection space, and has the body of the volume less than the second storage tank Product.
Multiple storage tanks may include: the first storage tank, and the first storage tank extends in the direction of the extension of the injection slit, and the first storage tank exists Have on the center position of first storage tank from two of the first storage tank and hold the internal diameter being incrementally decreased, inert gas is by two End is introduced into；Second storage tank, the second storage tank arrangement on the extending direction of the first storage tank in the gas injection block to extend, and second Storage tank is arranged between the first storage tank and gas injection space, and has the volume of the volume less than the first storage tank；And the Three storage tanks, third storage tank arrange that third storage tank is arranged in the gas injection block to extend on the extending direction of the second storage tank Between second storage tank and gas injection space, and there is the volume of the volume less than the second storage tank.
Gas supply part may include: interface channel, and the second storage tank is connected to third storage tank, interface channel by interface channel It is less than the volume of the volume of each of the second storage tank and third storage tank；And discharge slots, discharge slots, which have, to be connected The other end for being connected to an end of third storage tank and being connected to the inside of gas injection space, discharge slots, which have, is less than connection The volume of the volume in channel.
First storage tank may include: first passage, and first passage has in the direction of the center of the first channel from first passage Two hold the width that is incrementally decreased, inert gas is to be introduced through both ends；Second channel, second channel are logical first Extend on the extending direction in road, second channel is arranged between the first channel and the second tank；And third channel, third channel Extend in the direction of the extension of the second channel, third channel is arranged between the second channel and the second tank, wherein heat treatment is set Standby may include feed tube, and feed tube is connected to each of two ends of the first storage tank, inert gas is supplied It should be into the first storage tank.
First storage tank may include: first divide component, first divide component in the gas injection block with gas injection block Internal side wall separates, and the first division component has two ends for dividing component from first in the center direction of the first partition member The width gradually increased；Second divides component, and second divides component arrangement between the second tank and the first partition member, the Two division components are separated with the first division component；And third divides component, third divides component and is arranged in the second storage tank and the Two divide between component, and third divides component and is separated from the second partition member, and wherein first passage can correspond to the first division structure The space defined between part and the internal side wall of gas injection block, second channel can correspond to the first division component and second and divide The space defined between component, and third channel can correspond to the second division component and third divides the sky defined between component Between.
First division component can have multiple first intercommunicating pores, the extension side that multiple first intercommunicating pores divide component first Arrangement upwards, and be separated from each other, to allow first passage to be connected with the second channel, the second division component can have multiple second Intercommunicating pore, multiple second intercommunicating pores arrange on the extending direction of the second division component, and are separated from each other, to allow second to lead to Road is connected to third channel, and third division component can have multiple third connecting holes, and multiple third connecting holes are drawn in third Divide on the extending direction of component and arrange, and be separated from each other, to allow third channel to be connected to the second storage tank.
The number of second intercommunicating pore is smaller than the number of the first intercommunicating pore, and the number in third connecting hole is smaller than second The number of intercommunicating pore.
Each of second intercommunicating pore can have the internal diameter of the internal diameter less than each of the first intercommunicating pore, and Each of tee joint hole can have the internal diameter of the internal diameter less than each of the second intercommunicating pore.
Detailed description of the invention
It can be more fully understood exemplary embodiment from the following description with the drawings, in the accompanying drawings:
Fig. 1 is the schematic diagram according to the laser thermal processing apparatus of the relevant technologies.
Fig. 2 is the sectional view of Equipment for Heating Processing according to one exemplary embodiment.
Fig. 3 is the truncation front perspective view of the light irradiation module of Equipment for Heating Processing according to one exemplary embodiment.
Fig. 4 is the truncation bottom perspective of the light irradiation module of Equipment for Heating Processing according to one exemplary embodiment.
Fig. 5 is the perspective view of gas injection unit according to one exemplary embodiment.
Fig. 6 is the top cross section view of gas injection unit according to one exemplary embodiment.
Fig. 7 is the volume rendering of the line A-A ' along Fig. 5 according to one exemplary embodiment and the gas injection unit of acquirement Figure.
Specific embodiment
Hereinafter, specific embodiment will be described in detail with reference to the accompanying drawings.However, the present invention can body in different forms It is existing, and should not be construed as limited to embodiments described herein.More precisely, this is thesed embodiments are provided so as to obtain Invention will be thorough and complete, and will fully communicate the scope of the present invention to those skilled in the art.
Fig. 2 is the sectional view of Equipment for Heating Processing according to one exemplary embodiment.Fig. 3 is at heat according to one exemplary embodiment Manage the truncation front perspective view of the light irradiation module of equipment.Fig. 4 is the light irradiation mould of Equipment for Heating Processing according to one exemplary embodiment The truncation bottom perspective of block.Fig. 5 is the perspective view of gas injection unit according to one exemplary embodiment.Fig. 6 is that basis is shown The top cross section view of the gas injection unit of exemplary embodiment.Fig. 7 be the line A-A ' along Fig. 5 according to one exemplary embodiment and The perspective view of the gas injection unit of acquirement.
Referring to figure 2 to figure 4, Equipment for Heating Processing according to one exemplary embodiment includes: processing chamber 100, processing chamber 100 With inner space, substrate S is processed in the interior space；Platform 200, platform 200 are arranged in processing chamber 100, will Substrate S is placed on platform 200 and the substrate S that transfers horizontally in the direction of the process；Light source 300, light source 300 are arranged in With output light outside processing chamber 100, for example, the laser for handling substrate S；And light irradiation module 500, light irradiation module 500 are arranged in guide the laser exported from light source 300 in processing chamber 100, thus by laser irradiation to substrate S, and It will be in the substrate S of inert gas injection to illuminated laser.
The cross section that processing chamber 100 according to one exemplary embodiment can have shape to be square cylinder, but simultaneously It is not limited to this situation.For example, the alterable shape to correspond to substrate S of the shape of processing chamber 100.By (for example) stone The transmissive window 512 that English is formed is arranged in the upper wall of processing chamber 100.Transmissive window 512 may be arranged at the upper wall of processing chamber 100 Part in, to cover the upper part of light irradiation module 500.Transmissive window 512 can cover the top portion of light irradiation module 500 Point, or arrangement is in the upper wall of the process chamber, but is not limited to this situation.For example, transmissive window 512 may be provided at from light The laser that source 300 exports is directed into light irradiation module 500 at any position at place.
Processing chamber 100 can have sealing structure.However, oxygen (O2) or impurity may remain in processing chamber 100 In.Herein, oxygen (O2) film 11 formed in substrate S can be made to aoxidize, and impurity can be in thin for what is generated during technique The powder of granular state, or be gaseous process byproduct or other pollutants.Impurity can damage the quality of film 11 or change film 11 property, to cause product defects.
In order to solve to be attributed to oxygen (O2) and dopants penetration into the upper part of substrate S caused by limit, light Irradiation module 500 can be by the upside of inert gas injection to substrate S, to produce in the overlying regions of the illuminated laser of substrate S Raw inert gas atmosphere.Light irradiation module 500 is referred to alternatively as oxygen part degasification module (oxygen partial degassing Module, OPDM).
Light irradiation module 500 may include: light irradiation unit 510, and light irradiation unit 510 is arranged in processing chamber 100 simultaneously And there is inner space, the laser exported from light source 300 passes through inner space；And gas injection unit 520, gas injection list Member 520 is mounted on 510 lower section of light irradiation unit and is mounted between light irradiation unit 510 and substrate S, and inert gas is infused It is mapped in substrate S.
Light irradiation unit 510 includes: the first main body 510a, the first main body 510a has inner space, and laser passes through inside Space；Second main body 510b, the second main body 510b is connected to the low portion of the first main body 510a or is mounted on the first main body On the low portion of 510a, and there is the inner space being connected vertically with the inner space of the first main body 510a；And thoroughly Window 512 is penetrated, transmissive window 512 is mounted in the upper part of the first main body 510a, so that the laser transmission exported from light source 300. It herein, the inner space defined in each of the first main body 510a and the second main body 510b can be in a side of substrate S It upwardly extends.For example, inner space can extend in a direction crossing the transfer direction of the substrate s.Transmissive window can arrange With the upside of the inner space corresponding to the first main body 510a in the upper part of the first main body 510a, to be sealed or closed On the upside of the open type of first main body 510a.
In light irradiation unit 510, the light (for example, laser) exported from light source 300 may pass through transmissive window 512, and connect By the inner space of each of the first main body 510a and the second main body 510b, to be moved to gas injection unit In 520.Therefore, hereinafter, for the convenience of description, that defines in light irradiation unit 510 corresponds to transmissive window 512 and lining The inner space in the area between the S of bottom is (that is, the inside defined in each of the first main body 510a and the second main body 510b is empty Between) it is referred to alternatively as " light irradiation space 511 ".As described above, light irradiation space 511 can be defined as extending perpendicularly through first The part of each of main body 510a and the second main body 510b, light irradiation space 511 correspond to transmissive window 512 and substrate S Between.Similarly, light irradiation space 511 can be upwardly extended in a side of substrate S.Light according to one exemplary embodiment irradiates empty Between 511 vertical lengths (or height) that can have a horizontal width greater than light irradiation space 511.
Gas injection unit 520 can will be on inert gas injection to substrate S.Therefore, gas injection unit 520 can for for Inert gas atmosphere is generated to prevent the region of at least illuminated laser of substrate S to be exposed to the unit of oxygen and impurity.Gas Body injecting unit 520 includes: gas injection block 540, and gas injection block 540 is mounted on the low portion of light irradiation unit 510, And there is the inner space (hereinafter referred to as gas injection space 541) being connected to light irradiation space 511, and serving as a contrast The linear slit (the hereinafter referred to as first injection slit 540a) that one of bottom S just upwardly extends；Gas supply part 530, gas supply part 530 is arranged in a side of the gas injection space 541 in gas injection block 540, by inertia Gas is supplied in gas injection space 541；And first gas supply pipe 561 and second gas supply pipe 562, the first gas Body supply pipe 561 and second gas supply pipe 562 are connected respectively to two ends of gas supply part 530, with supplied for inert Gas；And tabular plate 550, tabular plate 550 is mounted on the low portion of gas injection block 540, and is arranged in substrate S Side.
Gas injection block 540 is mountable on the low portion of the second main body 510b of light irradiation unit 510.Gas injection Space 541 can extend perpendicularly through gas injection block 540, to be connected vertically with light irradiation space 511 and correspond to illumination The side for penetrating space 511 upwardly extends.That is, gas injection space 541 can be upwardly extended in a side of substrate S, particularly, with The side that the shift direction of substrate S intersects upwardly extends.Similarly, the lower region of gas injection space 541 can have in the first note Penetrate the internal diameter being incrementally decreased on the direction of slit 540a.In more detail, the lower region of gas injection space 541 can have The internal diameter being incrementally decreased on the direction of one injection slit 540a, and there is predetermined curvature or curved shape.
Inert gas can be supplied in gas injection space 541 by gas supply part 530, and be arranged in gas injection In one side of the gas injection space 541 in block 540.Gas supply part 530 includes the gas in gas injection block 540 Multiple storage tanks (tanks) 530a, 530b and the 530c arranged on the direction of injection space 541, storage tank 530a, 530b and 530c has volume different from each other.Herein, the storage tank with relatively smaller volume can adjacent to gas injection space 541 cloth It sets.Similarly, each of multiple storage tank 530a, 530b and 530c can be in the first injection slit 540a and the second injections Extend on the extending direction of each of slit 550a.Similarly, the first storage tank 530a can have from the first storage tank 530a's The internal diameter that the center position of two ends towards the first storage tank 530a are incrementally decreased, inert gas are introduced in two ends.
In more detail, gas supply part 530 includes: the first storage tank 530a, the first storage tank 530a includes the first division structure Part 531, second divides component 532 and third and divides component 533, first divide component 531, second divide component 532 and Third divides component 533 and is separated from each other on the direction of gas injection space 541, by the inside of the first storage tank 530a divide with And it is divided into three spaces (hereinafter referred to as first passage 531a, second channel 532a and third channel 533a)；The Two storage tank 530b, the second storage tank 530b has the space defined between the first storage tank 530a and gas injection space 541, and has There is the volume of the volume less than the first storage tank 530a；Third storage tank 530c, third storage tank 530c be defined in the second storage tank 530b with Between gas injection space 541, and there is the volume of the volume less than the second storage tank 530b；Interface channel 530d, connection are logical Third storage tank 530c is connected to the second storage tank 530b by road 530d；And discharge slots 530e, discharge slots 530e store up third Case 530c is connected to gas injection space 541, and inert gas is discharged into gas injection space 541.
Herein, the first storage tank 530a, the second storage tank 530b, interface channel 530d, third storage tank 530c and discharge slots 530e is to be arranged in order on the direction of gas injection space 541 from the outside of gas injection space 541.
First storage tank 530a can supply wherein to store from first gas supply pipe 561 and second gas supply pipe 562 Inert gas the inert gas stored to be supplied to the space in the second storage tank 530b.First storage tank 530a includes: the One, which divides component 531, second, divides component 532 and third division component 533, and first, which divides component 531, second, divides component 532 and third divide component 533 first injection slit 540a and second injection slit 550a extending direction on extend, It arranges, and is separated from each other on the direction of the second storage tank 530b and third storage tank 530c；And first passage 531a, second Channel 532a and third channel 533a, first passage 531a, second channel 532a and third channel 533a are by first stroke Component 531, second is divided to divide component 532 and the third division segmentation of component 533.That is, the first storage tank 530a includes: first divides Component 531, second divides component 532 and third and divides component 533, first divide component 531, second divide component 532 with And third divides component 533 and is arranged in order in the internal direction that the second storage tank 530b is arranged；First passage 531a, first Channel 531a corresponds to the space between first gas injection block 540 and the first division component 531, and has and be connected respectively to Two ends of first gas supply pipe 561 and second gas supply pipe 562；Second channel 532a, second channel 532a are corresponding The space between component 531 and the second division component 532 is divided in first；And third channel 533a, 533a pairs of third channel The space between component 533 should be divided in the second division component 532 and third.Herein, first the division of component 531, second is divided Component 532 and third, which divide component 533, can have identical extending direction.
Similarly, first passage 531a can on the center position of first passage 531a have from be connected respectively to gas supply Should two of pipe 561 and 562 hold the inner diameter or width being incrementally decreased.For this situation, as illustrated in figure 5 to figure 7, One, which divides component 531, can have on the center position of the first division component 531 from two ends of the first division component 531 gradually The width that ground increases.In more detail, it first divides and has on the center position that component 531 can divide component 531 first from the Two of one division component 531 hold the width gradually increased.In addition, the first division component 531 can have in face of first passage A convex surface of 531a, and for plane with an arc or fan shape and in face of another table of second channel 532a Face.Similarly, the first division component 531 has multiple first for allowing that first passage 531a is connected to second channel 532a Intercommunicating pore 534a.Multiple first intercommunicating pore 534a can first division component 531 extending direction on arrange, and each other every It opens.Similarly, multiple first intercommunicating pore 534a can be vertically arranged with multi-level form (multi-stages).
Therefore, when from first gas supply pipe 561 and second gas 562 supplying inert gas of supply pipe, indifferent gas Body can flow on the center position of first passage 531a from two ends of first passage 531a, and then extend.Herein, because There is the width that is incrementally decreased on the center position of first passage 531a for first passage 531a, so internal pressure can be It is gradually increased on the center position of first passage 531a from two ends of first passage 531a.With in the direction of extension have phase Compared with the channel of internal diameter, inert gas is attributable to pressure difference and rapidly expands in first passage 531a.Therefore, lazy Property gas can be uniformly supplied in the second storage tank 530b, third storage tank 530c and discharge slots 530e, and therefore uniformly Ground is supplied on the region of illuminated laser of substrate S.
For example, if first, which divides, has identical width on the extending direction that component 531 divides component 531 first Degree, then first passage 531a can also have same widths on the extending direction of first passage 531a.If from first passage Two end supplying inert gas of 531a, then shifted until the center of first passage 531a by inert gas, it can Inert gas is discharged into second channel 532a by the multiple first intercommunicating pore 534a defined in the first division component 531. Therefore, if inert gas is not uniformly supplied in second channel 532a, inert gas may not pass through the first note The injection of slit 540a and second slit 550a is penetrated to distribute evenly.As a result, laser may be irradiated unevenly the quilt of substrate It irradiates on the region of laser, and therefore, the part in the region of substrate may be exposed to oxygen and impurity.
However, as described above, because first passage 531a has on the center position of first passage 531a from the Two of one channel 531a hold the width being incrementally decreased, so compared with the channel in the direction of extension with same widths Compared with inert gas can flow quickly.Similarly, since the inert gas supplied from two ends of first passage 531a is rapidly Transfer and extension are until the center of first passage 531a, so inert gas can be uniformly supplied to second channel 532a's In entire area, and therefore it is uniformly injected on the region of illuminated laser of substrate S.
The second division component 532 according to one exemplary embodiment can have on the extending direction of the second division component 532 Same widths.For example, the cross section that the second division component 532 can have shape to be square, and it is arranged in first stroke Component 531 and third is divided to divide between component 533.Second division component 532 can have for allowing second channel 532a and the Multiple second intercommunicating pore 535a of triple channel 533a connection.Multiple second intercommunicating pore 535a can prolonging in the second division component 532 It stretches and is arranged on direction, and be separated from each other.Similarly, multiple second intercommunicating pore 535a can be vertically arranged with multi-level form.
Similarly, third division component 533 according to one exemplary embodiment can be in the extending direction of third division component 533 It is upper that there are same widths.For example, third divides the cross section that component 533 can have shape to be square, and is arranged in Second divides between component 532 and the second storage tank 530b.Third divide component 533 can have for allow third channel 533a with Multiple third connecting hole 536a of second storage tank 530b connection.Multiple third connecting hole 536a can divide component 533 in third It arranges, and is separated from each other on extending direction.Similarly, multiple third connecting hole 536a can be vertically arranged with multi-level form.
Be defined in respectively the first division component 531, second divide component 532 and third divide it is more in component 533 In a intercommunicating pore 534a, 535a and 536a, the number that the second intercommunicating pore 535a in the second division component 532 is arranged in can be small In the number for the first intercommunicating pore 534a being arranged in the first division component 531.Similarly, setting divides component 533 in third In third connecting hole 536a number be smaller than be arranged in second division component 532 in the second intercommunicating pore 535a number. If first, which divides component 531, second, which divides component 532 and third division component 533, has equal length, intercommunicating pore It must be evenly provided on and divide in component 531,532 and 533.Therefore, the distance between multiple second intercommunicating pore 535a can Greater than the distance between multiple first intercommunicating pore 534a, and the distance between multiple third connecting hole 536a can be greater than multiple the The distance between two intercommunicating pore 535a.
For another instance, the second intercommunicating pore 535a can have the internal diameter of the internal diameter less than the first intercommunicating pore 534a, and Third connecting hole 536a can have the internal diameter of the internal diameter less than the second intercommunicating pore 535a.
Certainly, the first intercommunicating pore 534a, the number of the second intercommunicating pore 535a and third connecting hole 536a and internal diameter can It decreases in order.
It therefore, can be by gradually from the inert gas that first gas supply pipe 561 and second gas supply pipe 562 are supplied Compression divides the first intercommunicating pore 534a of component 531, the second intercommunicating pore 535a of the second division component 532 also cross first And third divides the third connecting hole 536a of component 533.As a result, inert gas can flow evenly, also cross the first storage Case 530a, and therefore, inert gas can be uniformly supplied in the entire area of the second storage tank 530b.
Second storage tank 530b may be arranged between the first storage tank 530a and third storage tank 530c, will be from the first storage tank 530a The inert gas of supply is supplied in third storage tank 530c.In more detail, the second storage tank 530b can be for the first storage tank 530a's Third divides the space between component 533 and interface channel 530d, and has the volume of the volume less than the first storage tank 530a.
Third storage tank 530c may be arranged between interface channel 530d and discharge slots 530e with storage from interface channel Thus the inert gas stored is supplied in discharge slots 530e by the inert gas of 530d.Third storage tank 530c can have The volume of volume less than the second storage tank 530b.
In the present example, it is possible to provide three storage tanks 530a, 530b and 530c, that is, the first storage tank 530a, the second storage Case 530b and third storage tank 530c.However, the present invention is not limited to this situations.For example, according to inertia to be supplied The flow rate of gas, it is possible to provide three or more than three or less than three storage tank, that is, various number storage tanks.Similarly, it stores up The variable volume of each of case 530a, 530b and 530c.
Interface channel 530d may be arranged between the second storage tank 530b and third storage tank 530c.Interface channel 530d can have It is connected to one of the second storage tank 530b end, and to be connected to the thin channel of third storage tank 530c and with line shape another One end.Interface channel 530d can have the volume of the volume less than third storage tank 530c, and greater than in discharge slots 530e The internal diameter of diameter.
Similarly, discharge slots 530e may be arranged between third storage tank 530c and gas injection space 541.Discharge slots 530e can have one that is connected to third storage tank 530c to hold and be connected to the side section of gas injection block 540 to infuse with gas Penetrate the other end of the connection of space 541.Discharge slots 530e can have the inner diameter or volume less than interface channel 530d internal diameter or Volume.Discharge slots 530e can be tilted down on the direction of gas injection space 541.
Plate 550 may be connected to the low portion of gas injection block 540, and be arranged in above substrate S.According to exemplary real The plate 550 for applying example may be arranged in gas injection block 540, and has and extend in two directions from the first injection slit 540a Plate shape.Plate 550 can have greater than the horizontal length of gas injection block 540 and less than every in substrate S and platform 200 The horizontal length of one width.Plate 550 can have slit 550a (the hereinafter referred to as second injection slit 550a), laser Beam and inert gas pass through the second injection slit 550a.Second injection slit 550a can be arranged into narrow corresponding to the first injection Stitch the downside of 540a.Therefore, the second injection for being discharged into plate 550 via the first injection slit 540a of gas injection block 540 is narrow Inert gas in seam 550a can be extended by the gap between plate 550 and substrate S.
Hereinafter, will be described with reference to figure 2 to figure 7 by using Equipment for Heating Processing according to one exemplary embodiment makes The method of film crystallization.
Firstly, amorphous polycrystal film 11 is formed on glass substrate S, for example, amorphous polysilicon film.Similarly, The substrate S for being formed with amorphous polysilicon film thereon can be loaded into the processing chamber 100 of Equipment for Heating Processing, and be located On platform 200.
When substrate S to be located on platform 200, can be served as a contrast on the film 11 formed in laser irradiation to substrate S simultaneously Bottom S is transferred horizontally in the direction of the process through platform 200.That is, light source 300 can be operated with output light, that is, come from light source 300 laser.Then, the light irradiation space 511 of light irradiation unit 510 is passed through by transmissive window 512 in the laser exported It, can be by the laser exported via the first injection slit 540a and after the gas injection space 541 of gas injection unit 520 And second injection slit 550a be irradiated in substrate S.Therefore, the amorphous polysilicon film formed in substrate S can be with laser Reaction is to form crystal silicon thin film.
It as described above, can be by the upside of inert gas injection to substrate or thin when by laser irradiation to substrate S On film 11.It for this situation, can be by inert gas (for example, nitrogen (N2)) from first gas supply pipe 561 and the second gas Each of body supply pipe 562 is supplied in two ends of the first passage 531a of the first storage tank 530a.From first passage The nitrogen of two end supplies of 531a can be extended towards the center position of first passage 531a.Herein, first passage 531a can be Have on the center position of first passage 531a from two of first passage 531a and holds the width being incrementally decreased.Therefore, first Channel 531a, which can have on center position from two of first passage 531a, holds the pressure gradually increased.As a result, indifferent gas Body is attributable to pressure difference and transfers quickly or extend in the center of first passage 531a.
It is flowed through in the direction of extension that is, the inert gas for flowing through first passage 531a according to one exemplary embodiment can be faster than The inert gas in the channel with same inner diameter.The nitrogen rapidly expanded in first passage 531a can be by being arranged first It divides multiple first intercommunicating pore 534a supply in component 531 and expands in second channel 532a.In second channel 532a Nitrogen can be supplied by the multiple intercommunicating pore 535a being arranged in the second division component 532 and expand to third channel 533a In.
As described above, because first passage 531a is on center position have from two of first passage 531a ends by Gradually reduced internal diameter is to generate pressure difference in first passage 531a, so nitrogen can rapidly expand first passage 531a Entire area in.Similarly, the nitrogen in first passage 531a can be quickly supplied to second channel 532a and third channel In 533a.Herein, nitrogen can extend equally in the entire area of second channel 532a and third channel 533a.
Similarly, since the first intercommunicating pore 534a, the second intercommunicating pore 535a and third connecting hole 536a number and Internal diameter decreases in order, so nitrogen can be gradually compressed, also cross the first intercommunicating pore 534a, the second intercommunicating pore 535a with And third connecting hole 536a.Therefore, can equably supplying inert gas so that inert gas extends equally to the second storage tank In the entire area of 530b.
Hereafter, the nitrogen in the second storage tank 530b can be supplied in third storage tank 530c by interface channel 530d.Herein, Because the second storage tank 530b has the volume of the volume less than the first storage tank 530a, and third storage tank 530c has less than second The volume of the volume of storage tank 530b, so can be compressed in the second storage tank 530b from the nitrogen that the first storage tank 530a is supplied, and And it is then supplied in discharge slots 530e with the state that nitrogen is more compressed in third storage tank 530c.It is supplied to gas Nitrogen in injection space 541 can be injected into the upper part of substrate S by the first slit 540a and the second slit 550a On (that is, film 11), laser irradiation is on film 11.
Herein, as described above, nitrogen can be compressed, also cross the first storage tank 530a, the second storage tank 530b and Third storage tank 530c is to generate uniform flow.Therefore, can the supply of nitrogen so that nitrogen is uniformly distributed in the first injection slit 540a And second injection each of slit 550a entire area in.Therefore, nitrogen can be uniformly injected to illuminated laser beam Film 11 on.Similarly, the nitrogen injected can be extended to the outside from the gap between plate 550 and substrate S.Herein, it is present in Oxygen and impurity between plate 550 and substrate S can be pushed out by nitrogen.Similarly, since between plate 550 and substrate S Space in generate inert gas atmosphere, so the oxygen or impurity outside light irradiation module 500 may penetrate into plate 550 and lining In space between the S of bottom.Therefore, the film 11 of illuminated laser can be not exposed to oxygen and impurity.That is, illuminated laser Film 11 can be not exposed to oxygen and impurity by injecting uniformly for inert gas.Therefore, because illuminated laser is thin Film is not exposed to oxygen and impurity, so film 11 may not aoxidize during the crystallization of film 11, and is also possible to not It can be contaminated by impurities or change property.
Inert gas can be uniformly injected on substrate by gas injection unit according to the embodiment.Therefore, when executing lining When the treatment process of bottom, inert gas atmosphere can be generated just on substrate to prevent substrate to be exposed to oxygen and impurity.Particularly, Inert gas can be uniformly injected on the film formed on the irradiated area of the substrate.Therefore, film is shone The part for penetrating light can be not exposed to oxygen and impurity, to prevent film to be oxidized by oxygen and also prevent from occurring because of impurity Defective workmanship.
Described although having referred to specific embodiment gas injection unit and comprising the gas injection unit heat at Equipment is managed, but embodiment is not limited to this situation.Therefore, those skilled in the art will readily appreciate that, do not depart from by In the case where the spirit and scope of the invention that the appended claims define, embodiment can be carry out various modifications and be changed Become.

Claims (21)

1. a kind of be configured to the gas injection unit on inert gas injection to substrate, the gas injection unit includes:
Gas injection block, the gas injection block have gas injection space, and it is empty that the inert gas passes through the gas injection Between, and the gas injection block has injection slit, and the injection slit is defined in downside, with the one of the substrate The wire shaped that a side upwardly extends, and the inert gas is allowed to pass through the injection slit, to draw towards the substrate Lead the inert gas；And
Gas supply part, the gas supply part include the first storage tank, and first storage tank prolongs the injection slit The side of stretching upwardly extends, and two with the opposing sidewalls from first storage tank on the center position of first storage tank The internal diameter being incrementally decreased is held, the inert gas is introduced by described two ends, and the gas supply part is arranged in In the gas injection block and it is connected to the gas injection space, the inert gas is supplied to the gas injection In space.
2. gas injection unit according to claim 1, wherein the gas supply part includes:
Second storage tank, second storage tank are arranged in the gas injection block to prolong on the extending direction of first storage tank It stretches, second storage tank is arranged between first storage tank and the gas injection space, and is had and be less than described first The volume of the volume of storage tank；And
Third storage tank, the third storage tank are arranged in the gas injection block to prolong in the direction of extension of the second tank It stretches, the third storage tank is arranged between second storage tank and the gas injection space, and is had and be less than described second The volume of the volume of storage tank.
3. a kind of be configured to the gas injection unit on inert gas injection to substrate, the gas injection unit includes:
Gas injection block, the gas injection block have gas injection space, and it is empty that the inert gas passes through the gas injection Between, and the gas injection block has injection slit, and the injection slit is defined in downside, with the one of the substrate The wire shaped that a side upwardly extends, and the inert gas is allowed to pass through the injection slit, to draw towards the substrate Lead the inert gas；And
Gas supply part, the gas supply part have multiple storage tanks, and the multiple storage tank is in the gas injection block It arranges in the direction of the gas injection space, and there is volume different from each other, the gas supply part will be described Inert gas is supplied in the gas injection space, wherein the storage tank with relatively smaller volume is adjacent to the gas Injection space and arrange, and on the center position of the one of them in the multiple storage tank have from the multiple storage tank its Two of the opposing sidewalls of middle one hold the internal diameter being incrementally decreased, and the inert gas is introduced by described two ends.
4. gas injection unit according to claim 3, wherein the multiple storage tank includes:
First storage tank, first storage tank extend in the direction of extension of the injection slit, and first storage tank is described Have on the center position of one storage tank from two of first storage tank and hold the internal diameter being incrementally decreased, the inert gas is logical Described two ends are crossed to be introduced into；
Second storage tank, second storage tank are arranged in the gas injection block to prolong on the extending direction of first storage tank It stretches, second storage tank is arranged between first storage tank and the gas injection space, and is had and be less than described first The volume of the volume of storage tank；And
Third storage tank, the third storage tank are arranged in the gas injection block to prolong in the direction of extension of the second tank It stretches, the third storage tank is arranged between second storage tank and the gas injection space, and is had and be less than described second The volume of the volume of storage tank.
5. gas injection unit according to claim 2 or 4, the gas injection unit further comprises gas supply Pipe, the feed tube are connected to each of described two ends of first storage tank, the inert gas are supplied It should be into first storage tank.
6. gas injection unit according to claim 5, wherein the gas supply part includes:
Second storage tank is connected to the third storage tank by interface channel, the interface channel, and the interface channel is less than The volume of the volume of each of second storage tank and the third storage tank；And
Discharge slots, the discharge slots have be connected to one of third storage tank end and with the gas injection space Inside connection the other end, the discharge slots, which have, is less than each of the third storage tank and described interface channel Volume volume.
7. gas injection unit according to claim 5, wherein first storage tank includes:
First passage, the first passage have in the direction of the center of the first channel from two ends of the first passage The width being incrementally decreased, the inert gas are introduced by described two ends；
Second channel, the second channel extend in the direction of the extension of the first channel, and the second channel is arranged in institute It states between first passage and second storage tank；And
Third channel, the third channel extend in the direction of the extension of the second channel, and the third channel is arranged in institute It states between second channel and second storage tank,
Wherein second gas supply pipe is held and be connected to the first passage with one for being connected to first gas supply pipe The other end.
8. gas injection unit according to claim 7, wherein first storage tank includes:
First divides component, and described first divides internal side wall of the component in the gas injection block with the gas injection block It separates, the first division component, which has in the center direction of the first partition member from described first, divides the two of component The width that a end gradually increases；
Second divides component, and described second divides component arrangement between the second tank and the first partition member, institute The second division component is stated to be separated from the first partition member；And
Third divides component, and the third divides component and is arranged between second storage tank and the second division component, institute Third division component is stated to separate with the second division component,
Wherein the first passage corresponds to described first and divides between component and the internal side wall of the gas injection block The space defined,
The second channel corresponds to the space defined between the first division component and the second division component, and
The third channel corresponds to the second division component and the third divides the space defined between component.
9. gas injection unit according to claim 8, wherein the first division component has multiple first intercommunicating pores, The multiple first intercommunicating pore arranges on the extending direction of the first division component, and is separated from each other, described in allowing First passage is connected to the second channel,
Described second, which divides component, has multiple second intercommunicating pores, and the multiple second intercommunicating pore divides component described second It arranges, and is separated from each other on extending direction, to allow the second channel to be connected to the third channel, and
The third, which divides component, has multiple third connecting holes, and the multiple third connecting hole divides component in the third It arranges, and is separated from each other on extending direction, to allow the third channel to be connected to second storage tank.
10. gas injection unit according to claim 9 connects wherein the number of second intercommunicating pore is less than described first The number of through-hole, and the number in the third connecting hole is less than the number of second intercommunicating pore.
11. gas injection unit according to claim 9, wherein each of described second intercommunicating pore, which has, is less than institute State the internal diameter of the internal diameter of each of first intercommunicating pore, and each of described third connecting hole has and is less than described the The internal diameter of the internal diameter of each of two intercommunicating pores.
12. a kind of Equipment for Heating Processing, the Equipment for Heating Processing include:
Processing chamber has substrate processing space in the processing chamber；
Light source, the light source arrangement is outside the process chamber to export light for processing a substrate；
Light irradiation unit, the light irradiation unit are arranged in the processing chamber, and the light irradiation unit has inner space, The light output from light source output passes through the inner space；And
Gas injection unit, the gas injection unit are arranged in below the light irradiation unit and are arranged in the light irradiation Between unit and the substrate, by inert gas injection to the substrate,
Wherein the gas injection unit includes:
Gas injection block, the gas injection block have gas injection space, and it is empty that the inert gas passes through the gas injection Between, and the gas injection block has injection slit, and the injection slit is defined in downside, with the one of the substrate The wire shaped that a side upwardly extends, and the inert gas is allowed to pass through the injection slit, to draw towards the substrate Lead the inert gas；And
Gas supply part, the gas supply part include the first storage tank, and first storage tank prolongs the injection slit The side of stretching upwardly extends, and two with the opposing sidewalls from first storage tank on the center position of first storage tank The internal diameter being incrementally decreased is held, the inert gas is introduced by described two ends, and the gas supply part is arranged in In the gas injection block and it is connected to the gas injection space, the inert gas is supplied to the gas injection In space.
13. Equipment for Heating Processing according to claim 12, wherein the gas supply part includes:
Second storage tank, second storage tank are arranged in the gas injection block to prolong on the extending direction of first storage tank It stretches, second storage tank is arranged between first storage tank and the gas injection space, and is had and be less than described first The volume of the volume of storage tank；And
Third storage tank, the third storage tank are arranged in the gas injection block to prolong in the direction of extension of the second tank It stretches, the third storage tank is arranged between second storage tank and the gas injection space, and is had and be less than described second The volume of the volume of storage tank.
14. a kind of Equipment for Heating Processing, the Equipment for Heating Processing include:
Processing chamber has substrate processing space in the processing chamber；
Light source, the light source arrangement is outside the process chamber to export light for processing a substrate；
Light irradiation unit, the light irradiation unit are arranged in the processing chamber, and the light irradiation unit has inner space, The light output from light source output passes through the inner space；And
Gas injection unit, the gas injection unit are arranged in below the light irradiation unit and are arranged in the light irradiation Between unit and the substrate, by inert gas injection to the substrate,
Wherein the gas injection unit includes:
Gas injection block, the gas injection block have gas injection space, and it is empty that the inert gas passes through the gas injection Between, and the gas injection block has injection slit, and the injection slit is defined in downside, with the one of the substrate The wire shaped that a side upwardly extends, and the inert gas is allowed to pass through the injection slit, to draw towards the substrate Lead the inert gas；And
Gas supply part, the gas supply part have multiple storage tanks, and the multiple storage tank is in the gas injection block It arranges in the direction of the gas injection space, and there is volume different from each other, the gas supply part will be described Inert gas is supplied in the gas injection space, wherein the storage tank with relatively smaller volume is adjacent to the gas Injection space and arrange, and on the center position of the one of them in the multiple storage tank have from the multiple storage tank its Two of the opposing sidewalls of middle one hold the internal diameter being incrementally decreased, and the inert gas is introduced by described two ends.
15. Equipment for Heating Processing according to claim 14, wherein the multiple storage tank includes:
First storage tank, first storage tank extend in the direction of extension of the injection slit, and first storage tank is described Have on the center position of one storage tank from two of first storage tank and hold the internal diameter being incrementally decreased, the inert gas is logical Described two ends are crossed to be introduced into；
Second storage tank, second storage tank are arranged in the gas injection block to prolong on the extending direction of first storage tank It stretches, second storage tank is arranged between first storage tank and the gas injection space, and is had and be less than described first The volume of the volume of storage tank；And
Third storage tank, the third storage tank are arranged in the gas injection block to prolong in the direction of extension of the second tank It stretches, the third storage tank is arranged between second storage tank and the gas injection space, and is had and be less than described second The volume of the volume of storage tank.
16. Equipment for Heating Processing described in 3 or 15 according to claim 1, wherein the gas supply part includes:
Second storage tank is connected to the third storage tank by interface channel, the interface channel, and the interface channel is less than The volume of the volume of each of second storage tank and the third storage tank；And
Discharge slots, the discharge slots have be connected to one of third storage tank end and with the gas injection space Inside connection the other end, the discharge slots have less than the interface channel volume volume.
17. Equipment for Heating Processing described in 3 or 15 according to claim 1, wherein first storage tank includes:
First passage, the first passage have in the direction of the center of the first channel from two ends of the first passage The width being incrementally decreased, the inert gas are introduced by described two ends；
Second channel, the second channel extend in the direction of the extension of the first channel, and the second channel is arranged in institute It states between first passage and second storage tank；And
Third channel, the third channel extend in the direction of the extension of the second channel, and the third channel is arranged in institute It states between second channel and second storage tank,
Wherein the Equipment for Heating Processing includes feed tube, and the feed tube is connected to described the two of first storage tank The inert gas is supplied in first storage tank by each of a end.
18. Equipment for Heating Processing according to claim 17, wherein first storage tank includes:
First divides component, and described first divides internal side wall of the component in the gas injection block with the gas injection block It separates, the first division component, which has in the center direction of the first partition member from described first, divides the two of component The width that a end gradually increases；
Second divides component, and described second divides component arrangement between the second tank and the first partition member, institute The second division component is stated to be separated from the first partition member；And
Third divides component, and the third divides component and is arranged between second storage tank and the second division component, institute Third division component is stated to separate with the second division component,
Wherein the first passage corresponds to described first and divides between component and the internal side wall of the gas injection block The space defined,
The second channel corresponds to the space defined between the first division component and the second division component, and
The third channel corresponds to the second division component and the third divides the space defined between component.
19. Equipment for Heating Processing according to claim 18, wherein the first division component has multiple first intercommunicating pores, The multiple first intercommunicating pore arranges on the extending direction of the first division component, and is separated from each other, described in allowing First passage is connected to the second channel,
Described second, which divides component, has multiple second intercommunicating pores, and the multiple second intercommunicating pore divides component described second It arranges, and is separated from each other on extending direction, to allow the second channel to be connected to the third channel, and
The third, which divides component, has multiple third connecting holes, and the multiple third connecting hole divides component in the third It arranges, and is separated from each other on extending direction, to allow the third channel to be connected to second storage tank.
20. Equipment for Heating Processing according to claim 19 connects wherein the number of second intercommunicating pore is less than described first The number of through-hole, and the number in the third connecting hole is less than the number of second intercommunicating pore.
21. Equipment for Heating Processing according to claim 19, wherein each of described second intercommunicating pore, which has, is less than institute State the internal diameter of the internal diameter of each of first intercommunicating pore, and each of described third connecting hole has and is less than described the The internal diameter of the internal diameter of each of two intercommunicating pores.
CN201410563556.1A 2013-10-21 2014-10-21 Gas injection unit and Equipment for Heating Processing comprising the gas injection unit Active CN104576357B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2013-0125279 2013-10-21
KR1020130125279A KR101777688B1 (en) 2013-10-21 2013-10-21 treatment equipment

Publications (2)

Publication Number Publication Date
CN104576357A CN104576357A (en) 2015-04-29
CN104576357B true CN104576357B (en) 2019-04-09

Family

ID=53037768

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410563556.1A Active CN104576357B (en) 2013-10-21 2014-10-21 Gas injection unit and Equipment for Heating Processing comprising the gas injection unit

Country Status (2)

Country Link
KR (1) KR101777688B1 (en)
CN (1) CN104576357B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101983327B1 (en) 2016-07-26 2019-05-29 에이피시스템 주식회사 Laser processing apparatus
KR101958714B1 (en) * 2016-07-26 2019-03-18 에이피시스템 주식회사 Heat treatment equipment and method for heat treatment the same
KR102118133B1 (en) 2018-01-02 2020-06-03 에이피시스템 주식회사 Laser processing apparatus and method
KR102622277B1 (en) * 2022-05-19 2024-01-08 세메스 주식회사 Gas injection unit and apparatus for treating substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101437979A (en) * 2006-05-05 2009-05-20 应用材料股份有限公司 Batch processing chamber with diffuser plate and injector assembly

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI287587B (en) * 2001-08-24 2007-10-01 Asml Us Inc Protective shield and system for gas distribution
JP4947646B2 (en) * 2007-05-23 2012-06-06 株式会社日本製鋼所 Gas injection means for laser processing apparatus
KR101063245B1 (en) * 2008-09-17 2011-09-07 에이피시스템 주식회사 Injection unit and deposition apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101437979A (en) * 2006-05-05 2009-05-20 应用材料股份有限公司 Batch processing chamber with diffuser plate and injector assembly

Also Published As

Publication number Publication date
KR20150046425A (en) 2015-04-30
KR101777688B1 (en) 2017-09-27
CN104576357A (en) 2015-04-29

Similar Documents

Publication Publication Date Title
CN104576357B (en) Gas injection unit and Equipment for Heating Processing comprising the gas injection unit
US9556514B2 (en) Spatial deposition of material using short-distance reciprocating motions
US11371147B2 (en) Microwave plasma reactor for manufacturing synthetic diamond material
US8277561B2 (en) Chemical vapor deposition apparatus
US20120114877A1 (en) Radical Reactor with Multiple Plasma Chambers
KR101355638B1 (en) Atomic Layer Deposition Apparatus
US20160115595A1 (en) Gas supply apparatus
CN206003746U (en) A kind of vertical furnace tube device
CN104711542B (en) Baseplate support device and substrate board treatment
CN106415789A (en) Gas spraying apparatus and substrate processing apparatus including same
US20150191818A1 (en) Vertical furnace
KR101152234B1 (en) Droplet unit and substrate processing appratus
CN106673406B (en) A kind of glass production device
US20240139663A1 (en) Method of manufacturing a porous filter for degassing
KR20200018277A (en) Gas processing apparatus and gas processing method
KR102151821B1 (en) Method of manufacturing silicon single crystal
TWI743152B (en) Heat treatment apparatus and heat treatment method
KR20160109128A (en) Suction passage for producing epitaxial wafers
US20220195602A1 (en) Gas supply device for substrate processing device, and substrate processing device
CN104576448A (en) Heat treatment equipment
KR100982982B1 (en) Chemical vapor deposition apparatus
CN104576451A (en) Heat treatment equipment
KR100477373B1 (en) Liquid crystal injector and method of injecting liquid crystal
KR20140047844A (en) Gas flow controller for manufacturing high flatness wafer
KR101980313B1 (en) Apparatus for processing substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant