KR20140047844A - Gas flow controller for manufacturing high flatness wafer - Google Patents

Gas flow controller for manufacturing high flatness wafer Download PDF

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KR20140047844A
KR20140047844A KR1020120114061A KR20120114061A KR20140047844A KR 20140047844 A KR20140047844 A KR 20140047844A KR 1020120114061 A KR1020120114061 A KR 1020120114061A KR 20120114061 A KR20120114061 A KR 20120114061A KR 20140047844 A KR20140047844 A KR 20140047844A
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wafer
gas
partitions
gas flow
susceptor
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KR1020120114061A
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Korean (ko)
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김인겸
강유진
허용문
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주식회사 엘지실트론
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Priority to KR1020120114061A priority Critical patent/KR20140047844A/en
Priority to PCT/KR2013/009217 priority patent/WO2014061979A1/en
Publication of KR20140047844A publication Critical patent/KR20140047844A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

The present invention relates to a gas flow controller for manufacturing a high flatness wafer which effectively controls the movement of gas which is vapor-deposited on the surface of a wafer. The present invention includes a susceptor where a wafer is mounted; a gas guide member which is located to surround the susceptor where the wafer is mounted; an adsorption flow path where a gas for forming an epi layer on the surface of the wafer is injected; and partitions which are detachably installed on the absorption flow path and distribute an injection gas.

Description

고평탄 웨이퍼 제조용 가스유동 제어장치 {GAS FLOW CONTROLLER FOR MANUFACTURING HIGH FLATNESS WAFER}Gas Flow Controller for High Flat Wafer Fabrication {GAS FLOW CONTROLLER FOR MANUFACTURING HIGH FLATNESS WAFER}

본 발명은 웨이퍼 표면에 기상 증착되는 가스 유동을 효과적으로 제어할 수 있는 고평탄 웨이퍼 제조용 가스유동 제어장치에 관한 것이다.
The present invention relates to a gas flow control apparatus for manufacturing a high flat wafer that can effectively control the gas flow deposited on the wafer surface.

실리콘 웨이퍼는 처리 방법에 따라 폴리시드 웨이퍼(polished wafer), 에피택셜 웨이퍼(epitaxial wafer), SOI 웨이퍼(silicon on insulator wafer), 디퓨즈드 웨이퍼(diffused wafer) 및 하이 웨이퍼(HI wafer) 등으로 구분된다.Silicon wafers are classified into polished wafers, epitaxial wafers, silicon on insulator wafers, diffused wafers, and high wafers, depending on the processing method. .

이 중에서 에피택셜 웨이퍼는 기존의 실리콘 웨이퍼 표면에 또 다른 단결정층인 에피택셜층을 성장시킨 웨이퍼를 말하며, 기존의 실리콘 웨이퍼보다 표면 결함이 적고, 불순물의 농도나 종류의 제어가 가능한 특성을 갖는 웨이퍼이다. 상기 에피택셜층은 순도가 높고 결정 특성이 우수하여 고집적화되고 있는 반도체 장치의 수율 및 소자 특성 향상에 유리한 장점을 갖는다.Among these, an epitaxial wafer is a wafer in which an epitaxial layer, which is another single crystal layer, is grown on a surface of a conventional silicon wafer. The epitaxial wafer has a surface defect less than that of a conventional silicon wafer and has characteristics that can control the concentration and type of impurities. to be. The epitaxial layer has an advantage of improving the yield and device characteristics of a semiconductor device which is highly integrated due to its high purity and excellent crystal characteristics.

에피택셜 웨이퍼는 기본적으로 화학 기상 증착 (chemical vapor deposition, CVD)을 이용하는데, 고온에서 실리콘 웨이퍼의 표면으로 실리콘을 포함하는 소스가스를 제공함으로써 실리콘 에피택셜층을 성장시킨다.Epitaxial wafers basically use chemical vapor deposition (CVD) to grow a silicon epitaxial layer by providing a source gas containing silicon to the surface of the silicon wafer at high temperatures.

기존의 에피택셜 웨이퍼의 제조 장치는 실리콘 웨이퍼를 수용하여 에피택셜 공정이 수행되는 프로세스 챔버와 상기 프로세스 챔버로 상기 웨이퍼를 이송하는 트랜스퍼 챔버 및 로드락 챔버로 이루어진다.Existing epitaxial wafer manufacturing apparatus includes a process chamber in which a silicon wafer is accommodated and an epitaxial process is performed, and a transfer chamber and a load lock chamber for transferring the wafer to the process chamber.

한편, 최근 웨이퍼의 직경이 대형화됨에 따라 웨이퍼의 에지 부분까지 균일하게 에피택셜층을 형성하는 것이 어려워지면서, 이를 해결하기 위한 많은 노력들이 시도되고 있다. 특히, 300㎜ 이상의 대구경 웨이퍼에서 상기 웨이퍼의 에지 끝까지 에피택셜층을 균일하게 형성하기 위해서는 상기 프로세스 챔버 내의 유체 유동이 중요한 변수가 된다.On the other hand, as the diameter of the wafer increases in size, it is difficult to form an epitaxial layer evenly to the edge portion of the wafer, and many efforts have been made to solve this problem. In particular, fluid flow in the process chamber is an important parameter in order to uniformly form the epitaxial layer from the large diameter wafer of 300 mm or more to the edge end of the wafer.

일본공개특허 제2003-86524호는 기상 성장 장치 및 에피택셜 웨이퍼의 제조방법에 관한 것으로서, 웨이퍼의 표면의 폭 방향으로 원료 가스를 균일하게 분산시키기 위하여 파티션들이 구비된 가스 안내 부재가 구비된다. 이때, 파티션들은 가스 안내 부재의 흡입 측에 고정된 형태로 구비되며, 파티션들 사이로 가스의 유동을 제어함으로써, 에피텍셜층의 두께를 비롯하여 평탄도를 제어한다. Japanese Laid-Open Patent Publication No. 2003-86524 relates to a vapor phase growth apparatus and a method for manufacturing an epitaxial wafer, and includes a gas guiding member having partitions for uniformly dispersing source gas in the width direction of the surface of the wafer. At this time, the partitions are provided in a fixed form on the suction side of the gas guide member, by controlling the flow of gas between the partitions, thereby controlling the flatness, including the thickness of the epitaxial layer.

이와 같은 종래의 에피택셜 웨이퍼를 제조하기 위하여 가스의 유동을 제어하는 장치는 가스 유동을 제어하기 위하여 미리 설계된 위치에 파티션들을 고정시킨 파트(part)로 제작되고, 이로 인하여 일부에 국한된 제품에서만 품질을 개선할 수 있는 한계가 있다. In order to manufacture such a conventional epitaxial wafer, a device for controlling the flow of gas is manufactured from parts having fixed partitions in a predesigned position to control the gas flow, thereby improving the quality of only a limited number of products. There is a limit to improvement.

나아가, 웨이퍼의 평탄도가 열위한 영역이 제품마다 다를 때마다 파티션들의 위치가 변경된 파트로 설계 변경되어야 하며, 기존의 파트를 분리한 다음, 설계 변경된 파트를 장착하기 위하여 기상 증착 장치의 가동을 중단하고, 기상 증착 장치의 가동율을 저하시키는 동시에 에피택셜 웨이퍼의 생산율을 저감시키는 문제점이 있다.Furthermore, whenever the flatness of the wafer varies from one product to another, the partitions must be redesigned into parts whose positions have been changed, and after the existing parts are separated, the vapor deposition apparatus is shut down to mount the redesigned parts. In addition, there is a problem of lowering the operation rate of the vapor deposition apparatus and reducing the production rate of the epitaxial wafer.

또한, 가스 유동이 주입되는 파트 내에서 여러 개의 흡입구를 통하여 유입된 가스 유동이 혼재되거나, 가스 유동의 직진성이 원활하지 않기 때문에 가스 유량이 손실될 뿐 아니라 에피택셜 웨이퍼의 성능을 저감시키는 문제점이 있다.
In addition, there is a problem in that the gas flow is introduced through a plurality of suction ports in the part into which the gas flow is injected, or the gas flow rate is not lost because the straightness of the gas flow is not smooth, and the performance of the epitaxial wafer is reduced. .

본 발명은 상기한 종래 기술의 문제점을 해결하기 위하여 안출된 것으로서, 에피택셜 웨이퍼의 에피층을 형성하기 위하여 주입되는 가스의 유동을 손쉽게 제어할 수 있는 고평탄 웨이퍼 제조용 가스유동 제어장치를 제공하는데 그 목적이 있다.
The present invention has been made to solve the above-mentioned problems of the prior art, and provides a gas flow control apparatus for manufacturing a high flat wafer that can easily control the flow of the gas injected to form an epitaxial wafer layer. There is a purpose.

본 발명은 웨이퍼가 올려지는 서셉터(suceptor); 상기 웨이퍼가 올려진 서셉터를 감싸도록 위치된 가스안내부재; 상기 가스안내부재 일측에 구비되고, 웨이퍼의 표면에 에피층을 형성하기 위한 가스가 주입되는 흡입유로; 및 상기 흡입유로 상에 탈착 가능하게 설치되고, 주입 가스를 분배하는 복수개의 파티션(partition);을 포함하는 고평탄 웨이퍼 제조용 가스유동 제어장치를 제공한다.
The present invention is a susceptor (suceptor) on which the wafer is loaded; A gas guide member positioned to surround the susceptor on which the wafer is placed; A suction passage provided at one side of the gas guide member and into which a gas for forming an epi layer is formed on a surface of a wafer; And a plurality of partitions detachably installed on the suction passage and distributing injection gas.

본 발명에 따른 고평탄 웨이퍼 제조용 가스유동 제어장치는 주입 가스의 유로 상 원하는 위치에 파티션들을 선택적으로 탈착함으로써, 주입 가스의 유동을 선택적으로 제어할 수 있어 웨이퍼의 품질을 높일 수 있다.The gas flow control apparatus for manufacturing a high flat wafer according to the present invention can selectively control the flow of the injection gas by selectively detaching partitions at a desired position on the flow path of the injection gas, thereby improving the quality of the wafer.

또한, 본 발명은 웨이퍼 제품이 변경되더라도 기존의 기상 증착 장치에서 주입 가스의 유로 상에 파티션들의 위치를 변경함으로써, 주입 가스의 유로 변경한 파트를 따로 추가로 제작하지 않더라도 다양한 종류의 웨이퍼를 생산할 수 있다.In addition, according to the present invention, even if the wafer product is changed, by changing the position of the partitions on the flow path of the injection gas in the existing vapor deposition apparatus, various kinds of wafers can be produced without additionally manufacturing the changed parts of the injection gas path. have.

또한, 본 발명은 주입 가스가 여러 개의 흡입구를 통하여 유입된 다음, 배플에 구비된 복수개의 분배홀을 통하여 분배됨으로써, 흡입유로 상의 가스 유량의 손실을 방지할 수 있고, 나아가 분배홀들을 통과한 주입 가스가 그 유동 방향과 수평하게 위치한 파티션들에 의해 직진성을 높임으로써, 에피택셜 웨이퍼의 표면 전체에 에피층의 균일도를 높일 수 있다.
In addition, the present invention is injected through a plurality of inlet ports, the injection gas is distributed through a plurality of distribution holes provided in the baffle, it is possible to prevent the loss of the gas flow rate on the suction flow path, and further injection through the distribution holes By increasing the straightness by the partitions in which the gas is located parallel to the flow direction, it is possible to increase the uniformity of the epi layer throughout the surface of the epitaxial wafer.

도 1은 본 발명에 따른 고평탄 웨이퍼 제조용 가스유동 제어장치가 도시된 측단면도.
도 2는 도 1의 주요부가 평면도.
도 3은 도 1에 적용된 인젝터 캡이 도시된 정면도.
도 4는 도 1에 적용된 배플이 도시된 정면도.1 is a side cross-sectional view showing a gas flow control apparatus for manufacturing a high flat wafer according to the present invention.
2 is a plan view of the main part of FIG.
3 is a front view showing the injector cap applied in FIG.
4 is a front view showing the baffle applied to FIG.

이하에서는, 본 실시예에 대하여 첨부되는 도면을 참조하여 상세하게 살펴보도록 한다. 다만, 본 실시예가 개시하는 사항으로부터 본 실시예가 갖는 발명의 사상의 범위가 정해질 수 있을 것이며, 본 실시예가 갖는 발명의 사상은 제안되는 실시예에 대하여 구성요소의 추가, 삭제, 변경 등의 실시변형을 포함한다고 할 것이다. Hereinafter, the present embodiment will be described in detail with reference to the accompanying drawings. It should be understood, however, that the scope of the inventive concept of the present embodiment can be determined from the matters disclosed in the present embodiment, and the spirit of the present invention possessed by the present embodiment is not limited to the embodiments in which addition, Variations.

도 1은 본 발명에 따른 고평탄 웨이퍼 제조용 가스유동 제어장치가 도시된 측단면도이다.1 is a side cross-sectional view showing a gas flow control apparatus for manufacturing a high flat wafer according to the present invention.

본 발명에 따른 고평탄 웨이퍼 제조용 가스유동 제어장치는 도 1에 도시된 바와 같이 서셉터(110)와, 가스안내부재(120)와, 흡입유로(130)와, 파티션들(140)을 포함하도록 구성된다.The gas flow control apparatus for manufacturing a high flat wafer according to the present invention includes a susceptor 110, a gas guide member 120, a suction flow path 130, and partitions 140 as shown in FIG. 1. It is composed.

상기 서셉터(110)는 웨이퍼(W)가 올려지도록 웨이퍼(W)보다 직경이 작게 구성되며, 회전 가능하도록 설치된다. 이때, 상기 서셉터(110)는 웨이퍼(W)와 접촉 면적을 줄일 수 있도록 구성된다.The susceptor 110 is configured to have a smaller diameter than the wafer W so that the wafer W is lifted up, and is installed to be rotatable. In this case, the susceptor 110 is configured to reduce the contact area with the wafer (W).

상기 가스안내부재(120)는 상기 서셉터(110)를 수용하도록 구성되는데, 웨이퍼(W)의 상면에 에피층을 형성하기 위하여 가스가 수평방향으로 유동될 수 있는 공간을 제공한다. 물론, 상기 가스안내부재(120) 상/하측에는 가열하는 복수개의 히터(미도시)가 구비되며, 에피층을 기상 증착시키기 위한 제어 조건에 맞추어 상기 히터들이 제어될 수 있다.The gas guide member 120 is configured to receive the susceptor 110, and provides a space in which gas can flow in the horizontal direction to form an epi layer on the upper surface of the wafer (W). Of course, a plurality of heaters (not shown) for heating are provided above and below the gas guide member 120, and the heaters may be controlled according to control conditions for vapor deposition of the epi layer.

일예로, 상기 가스안내부재(120)는 돔(Dome) 형상의 상부 커버(121)와 콘(Cone) 형상의 하부 커버(122)가 서로 맞물리도록 구성되며, 수평방향 양측에 흡입유로(130)와 토출유로(150)가 구비될 수 있다. 이때, 상기 흡입유로(130)와 토출유로(150)는 웨이퍼(W)의 상면보다 낮게 위치되며, 상기 흡입유로(130)에서 웨이퍼(W)의 상면으로 또는 상기 웨이퍼(W)의 상면에서 상기 토출유로(150)로 가스 유동을 안내하기 위하여 제방부재(123)가 구비될 수 있다. 또한, 상기 제방부재(123)의 내측에 웨이퍼(W)의 상면으로 안내되는 가스 유동을 가열하기 위한 보조 히터(124)가 구비될 수 있다.For example, the gas guide member 120 is configured such that a dome-shaped upper cover 121 and a cone-shaped lower cover 122 are engaged with each other, and the suction flow path 130 is disposed on both sides in a horizontal direction. And a discharge passage 150 may be provided. In this case, the suction passage 130 and the discharge passage 150 are positioned lower than the upper surface of the wafer W, and the suction passage 130 and the upper surface of the wafer W in the suction passage 130 or the upper surface of the wafer W. The embankment member 123 may be provided to guide the gas flow to the discharge passage 150. In addition, an auxiliary heater 124 for heating the gas flow guided to the upper surface of the wafer (W) may be provided inside the embankment member (123).

상기 흡입유로(130)는 상기 상부 커버(121)와 하부 커버(122)가 서로 맞물리는 일방향 측에 구비되며, 수평하게 가스 유동을 안내하도록 구성된다.The suction passage 130 is provided at one side of the upper cover 121 and the lower cover 122 engaged with each other, and is configured to guide the gas flow horizontally.

도 2는 도 1의 주요부가 평면도이고, 도 3 내지 도 4는 도 1에 적용된 인젝터 캡 및 배플이 도시된 정면도이다. FIG. 2 is a plan view of the main part of FIG. 1, and FIGS. 3 to 4 are front views illustrating the injector cap and the baffle applied to FIG. 1.

상기 흡입유로(130)의 실시예는, 도 2 내지 도 4에 도시된 바와 같이 인젝터(131)와, 상기 인젝터(131) 선단에 각각 구비된 인젝터 캡(132) 및 배플(133)을 포함하도록 구성될 수 있다.The embodiment of the suction passage 130, as shown in Figures 2 to 4, to include an injector 131, the injector cap 132 and the baffle 133 provided at the tip of the injector 131, respectively Can be configured.

상기 인젝터(131)는 주입 가스를 외부로부터 상기 가스안내부재(120) 내부로 안내하도록 구성된다. 이때, 상기 인젝터(131)는 상기 하부 커버(122)의 원주를 따라 일정 구간에 걸쳐 맞물리도록 구성되는데, 상기 인젝터(131)가 상기 제방부재(123)와 맞물려 주입 가스가 수평방향으로 유입된 다음, 상기 제방부재(123)에 부딪혀 상향 이동되어 다시 수평방향 유동을 하도록 안내된다.The injector 131 is configured to guide the injection gas from the outside into the gas guide member 120. At this time, the injector 131 is configured to engage over a predetermined section along the circumference of the lower cover 122, the injector 131 is engaged with the embankment member 123 and then the injection gas is introduced into the horizontal direction The bump is moved upward by hitting the embankment member 123 to guide the horizontal flow again.

상기 인젝터 캡(132)은 복수개의 흡입구(132H,132h,132h')가 일렬로 구비되는데, 중앙에 비교적 큰 흡입구(132H)와, 그 양측에 비교적 작은 흡입구(132h,132h')가 구비된다. 물론, 상기 인젝터 캡(132) 내측에 별도로 각각의 흡입구(132H,132h,132h')로 주입 가스를 주입하는 주입관들(132a,132b)이 구비되며, 상기 주입관들(132a,132b)을 통하여 주입 가스의 종류 또는 유량 등을 제어할 수 있다. The injector cap 132 is provided with a plurality of inlets 132H, 132h and 132h 'in a row, with a relatively large inlet 132H at the center and relatively small inlets 132h and 132h' at both sides. Of course, injection tubes 132a and 132b are provided inside the injector cap 132 to inject injection gas into the respective suction ports 132H, 132h and 132h ', and the injection tubes 132a and 132b are provided. It is possible to control the type or flow rate of the injection gas through.

상기 배플(133)은 상기 흡입구들(132H,132h,132h')로부터 흡입된 가스를 분배하기 위하여 복수개의 분배홀(133h)이 구비되는데, 상기 분배홀들(133h)도 일렬로 나란히 구비된다. 이때, 상기 배플(133)은 주입 가스의 유동 방향과 수직하게 설치된다.The baffle 133 is provided with a plurality of distribution holes 133h for distributing the gas sucked from the suction ports 132H, 132h, and 132h ', and the distribution holes 133h are also provided side by side. At this time, the baffle 133 is installed perpendicular to the flow direction of the injection gas.

특히, 상기 배플(133)의 후면은 그 둘레에 후방으로 돌출된 돌기부(133a)가 구비되고, 상기 돌기부(133a)에 상기 파티션들(140)이 탈착될 수 있도록 복수개의 장착홈(133b)이 구비된다. 이때, 상기 장착홈들(133b)은 상기 돌기부(133a)에 구비됨에 따라 상기 파티션들(140)의 선단 상/하부만 끼워질 수 있으며, 상기 장착홈들(133b)은 상기 분배홀들(133h) 사이마다 구비될 수 있다. 물론, 상기 파티션들(140)의 선단은 상기 장착홈들(133b) 중 선택 위치에 탈착될 수 있고, 상기 파티션들(140)의 후단은 상기 제방부재(123)까지 연장되도록 장착될 수 있으며, 상기 파티션들(140)은 주입 가스의 유동 방향과 나란히 배열될 수 있다. In particular, the rear surface of the baffle 133 is provided with a projection 133a protruding rearward around the plurality of mounting grooves 133b so that the partitions 140 can be detached from the projection 133a. It is provided. In this case, as the mounting grooves 133b are provided in the protrusion 133a, only upper and lower ends of the partitions 140 may be fitted, and the mounting grooves 133b may be disposed in the distribution holes 133h. ) May be provided every time. Of course, the front end of the partitions 140 may be detachable at a selected position among the mounting grooves 133b, and the rear end of the partitions 140 may be mounted to extend to the embankment member 123. The partitions 140 may be arranged in parallel with the flow direction of the injection gas.

상기와 같이 구성된 고평탄 웨이퍼 제조용 가스유동 제어장치의 작동 상태를 살펴보면, 다음과 같다.Looking at the operating state of the gas flow control apparatus for manufacturing a high flat wafer configured as described above are as follows.

웨이퍼 표면에 기상 증착될 주입 가스의 유량 또는 유속을 제어하기 위하여 도 1 내지 도 4에 도시된 바와 같이 상기 파티션들(140)이 상기 배플(133)의 장착홈들(133b) 중에 선택적으로 장착되는데, 웨이퍼(W) 제품에 따라 요구되는 에피층의 평탄도를 고려하여 장착 위치가 선정될 수 있다.The partitions 140 are selectively mounted among the mounting grooves 133b of the baffle 133 as shown in FIGS. 1 to 4 to control the flow rate or flow rate of the injection gas to be vapor deposited on the wafer surface. According to the wafer W product, the mounting position may be selected in consideration of the flatness of the epi layer required.

이와 같이, 상기 파티션들(140)이 장착되고, 웨이퍼(W)가 상기 가스안내부재(120)에 내장된 다음, 상기 히터들이 가열되는 동시에 주입 가스가 상기 흡입유로(130)를 통하여 주입된다. In this way, the partitions 140 are mounted, the wafer W is embedded in the gas guide member 120, and then the heaters are heated and the injection gas is injected through the suction flow path 130.

따라서, 주입 가스는 상기 주입관들(132a,132b)을 통하여 상기 인젝터 캡(132)의 흡입구들(132H,132h,132h')로 주입되고, 상기 배플(133)의 분배홀들(133h)을 통하여 분배된 다음, 상기 파티션들(140)에 의해 나뉘어진 유로를 따라 수평 방향으로 상기 제방부재(123)까지 유동된다. Therefore, the injection gas is injected into the inlets 132H, 132h, and 132h 'of the injector cap 132 through the injection pipes 132a and 132b, and the distribution holes 133h of the baffle 133 are opened. After the distribution, the liquid flows to the embankment member 123 in a horizontal direction along a flow path divided by the partitions 140.

이후, 주입 가스는 상기 제방부재(123)에 부딪혀서 상향 이동되고, 상기 서셉터(110)에 올려진 웨이퍼(W) 상면을 따라 수평 방향으로 유동된다. 이때, 주입 가스는 고온 하에서 웨이퍼(W) 상면에 증착됨에 따라 에피층을 형성하게 된다.Thereafter, the injection gas is moved upward by hitting the embankment member 123 and flows in a horizontal direction along the upper surface of the wafer W mounted on the susceptor 110. At this time, the injection gas is formed on the upper surface of the wafer (W) under high temperature to form an epitaxial layer.

이후, 웨이퍼(W) 상면을 통과한 가스는 상기 토출유로(150)를 통하여 배출된다.Thereafter, the gas passing through the upper surface of the wafer W is discharged through the discharge passage 150.

이와 같이, 기상 증착에 의해 웨이퍼(W) 표면에 에피층을 형성하게 되는데, 주입 가스가 유입되는 위치에 따라 유량을 조절함으로써, 에피층의 두께를 비롯하여 평탄도를 제어할 수 있다. 따라서, 상기 파티션들(140)을 상기 배플(133)에 일렬로 구비된 장착홈들(133b) 중 위치를 선택하여 장착함으로써, 손쉽게 주입 가스의 유입 위치에 따라 유량을 조절할 수 있어 다른 형태로 흡입 유로 파트를 제작하지 않더라도 다른 종류의 웨이퍼 제품을 생산할 수 있다.
As described above, an epitaxial layer is formed on the surface of the wafer W by vapor deposition. By adjusting the flow rate according to the position at which the injection gas is introduced, the thickness and the flatness of the epitaxial layer can be controlled. Accordingly, by selecting and mounting the partitions 140 from the mounting grooves 133b provided in a row on the baffle 133, the flow rate can be easily adjusted according to the inflow position of the injection gas, and suctioned in a different form. Other types of wafer products can be produced without the production of euro parts.

110 : 서셉터 120 : 가스안내부재
130 : 흡입유로 131 : 인젝터
132 : 배플 133 : 인젝터 캡
140 : 파티션110: susceptor 120: gas guide member
130: suction flow path 131: injector
132: baffle 133: injector cap
140: partition

Claims (7)

웨이퍼가 올려지는 서셉터(suceptor);
상기 웨이퍼가 올려진 서셉터를 감싸도록 위치된 가스안내부재;
상기 가스안내부재 일측에 구비되고, 웨이퍼의 표면에 에피층을 형성하기 위한 가스가 주입되는 흡입유로; 및
상기 흡입유로 상에 탈착 가능하게 설치되고, 주입 가스를 분배하는 복수개의 파티션(partition);을 포함하는 고평탄 웨이퍼 제조용 가스유동 제어장치.A susceptor on which the wafer is placed;
A gas guide member positioned to surround the susceptor on which the wafer is placed;
A suction passage provided at one side of the gas guide member and into which a gas for forming an epi layer is formed on a surface of a wafer; And
And a plurality of partitions detachably installed on the suction passage and distributing injection gas. 제1항에 있어서,
상기 흡입유로는,
상기 가스안내부재 일측에 연통되는 인젝터(injetor)와,
상기 인젝터 선단에 연통되고, 복수개의 흡입구가 일렬로 구비된 인젝터 캡(injector cap)과,
상기 인젝터 선단 내측에 구비되고, 상기 흡입구들로부터 흡입된 가스를 분배하는 복수개의 분배홀이 일렬로 구비된 배플(baffle)을 포함하며,
상기 파티션들은,
상기 인젝터 내부에 탈착 가능하게 구비된 고평탄 웨이퍼 제조용 가스유동 제어장치.The method of claim 1,
The suction passage
An injector communicating with one side of the gas guide member;
An injector cap communicating with the injector tip and provided with a plurality of suction ports in a row;
A baffle provided inside the injector tip and having a plurality of distribution holes for distributing the gas sucked from the suction ports in a row;
The partitions,
A gas flow control apparatus for manufacturing a high flat wafer, which is detachably provided in the injector. 제2항에 있어서,
상기 파티션들은 상기 배플에 탈착 가능하게 설치된 고평탄 웨이퍼 제조용 가스유동 제어장치.3. The method of claim 2,
The partitions are gas flow control apparatus for manufacturing a high flat wafer detachably installed in the baffle. 제3항에 있어서,
상기 배플은 상기 파티션들의 선단이 끼워지는 복수개의 장착홈이 구비된 고평탄 웨이퍼 제조용 가스유동 제어장치.The method of claim 3,
The baffle is a gas flow control device for manufacturing a flat wafer having a plurality of mounting grooves to be fitted to the front end of the partitions. 제4항에 있어서,
상기 장착홈들은 상기 분배홀들 사이 사이마다 구비된 고평탄 웨이퍼 제조용 가스유동 제어장치.5. The method of claim 4,
The mounting grooves gas flow control device for manufacturing a high flat wafer provided between each of the distribution holes. 제5항에 있어서,
상기 장착홈들은 상기 파티션들의 선단 일부만 끼워지도록 상기 배플의 내측 둘레에 돌출된 돌출부 상에 구비된 고평탄 웨이퍼 제조용 가스유동 제어장치.6. The method of claim 5,
And the mounting grooves are provided on a protrusion projecting around an inner circumference of the baffle so as to fit only a portion of the tip of the partitions. 제1항 내지 제6항 중 어느 한 항에 있어서,
상기 흡입유로는 상기 서셉터보다 높게 위치되고,
상기 가스안내부재는 상기 흡입유로로부터 유입된 가스를 상기 서셉터로 안내하는 제방부재를 더 포함하며,
상기 파티션들은 상기 흡입유로로부터 상기 제방부재까지 연장되도록 설치된 고평탄 웨이퍼 제조용 가스유동 제어장치.
7. The method according to any one of claims 1 to 6,
The suction passage is located higher than the susceptor,
The gas guide member further includes a dike member for guiding the gas introduced from the suction passage to the susceptor,
And the partitions are installed to extend from the suction passage to the embankment member.
KR1020120114061A 2012-10-15 2012-10-15 Gas flow controller for manufacturing high flatness wafer KR20140047844A (en)

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