CN116752121B - Cover plate and fluid vapor deposition device - Google Patents
Cover plate and fluid vapor deposition device Download PDFInfo
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- CN116752121B CN116752121B CN202310713243.9A CN202310713243A CN116752121B CN 116752121 B CN116752121 B CN 116752121B CN 202310713243 A CN202310713243 A CN 202310713243A CN 116752121 B CN116752121 B CN 116752121B
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- flat top
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 22
- 239000012530 fluid Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 79
- 230000008569 process Effects 0.000 claims abstract description 79
- 239000007921 spray Substances 0.000 claims abstract description 73
- 238000005507 spraying Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 14
- 230000008021 deposition Effects 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 12
- 238000009826 distribution Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 89
- 238000000151 deposition Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a cover plate and a fluid vapor deposition device, and relates to the technical field of semiconductor deposition. The cover plate is provided with a dome curved surface, the cover plate is used for being covered on the spray disk, the dome curved surface and the spray disk jointly enclose an airflow cavity, the dome curved surface is a non-flat surface, and the dome curved surface is used for guiding process gas so that the process gas uniformly flows onto the spray disk. Compared with the prior art, the cover plate provided by the invention has the advantages that the dome curved surface arranged on the non-flat surface is adopted, so that the process gas can be stably guided, the guiding effect is good, the deposition rate is high, the flow speed and the distribution uniformity of the process gas are ensured, and the evenness and the uniformity of film formation are improved.
Description
Technical Field
The invention relates to the technical field of semiconductor deposition, in particular to a cover plate and a fluid vapor deposition device.
Background
Fluid vapor deposition is a remote plasma deposition technique that requires the directional introduction of process gases into a reaction chamber, and the top-down filling of the trenches after reaction is achieved, thereby meeting certain manufacturing requirements for hole filling capability. At present, in a fluid vapor deposition device, a cover plate, a flow guide block and a spray disk are combined to form an airflow chamber, and process gas enters the airflow chamber through the flow guide block, is distributed above the spray disk along the inner side wall of the cover plate, and enters a reaction chamber through gas nozzles arranged on the spray disk. But the current flow guiding effect of the inner side wall of the cover plate is poor, and the flow speed and the distribution uniformity of the process gas are directly influenced, so that the deposition rate of the process film formation, the flatness and the uniformity of the film layer and the like are influenced.
In view of this, it is important to design and manufacture a cover plate with good flow guiding effect and a fluid vapor deposition device, especially in semiconductor production.
Disclosure of Invention
The invention aims to provide a cover plate which can conduct stable flow guiding on process gas, has good flow guiding effect and high deposition rate, ensures the flow speed and the distribution uniformity of the process gas, and further improves the evenness and the uniformity of film formation.
The invention further aims to provide a fluid vapor deposition device which can conduct stable flow guiding on process gas, has good flow guiding effect and high deposition rate, ensures the flow velocity and the distribution uniformity of the process gas, and further improves the evenness and the uniformity of film formation.
The invention is realized by adopting the following technical scheme.
The cover plate is used for a fluid vapor deposition device and is provided with a spray disk, the cover plate is provided with a dome curved surface, the cover plate is used for being covered on the spray disk, the dome curved surface and the spray disk jointly enclose an airflow cavity, the dome curved surface is a non-flat surface, and the dome curved surface is used for guiding process gas so as to enable the process gas to uniformly flow onto the spray disk.
Optionally, the dome curved surface includes plane top surface, first arcwall face and first conical surface, plane top surface and spray set parallel interval setting, and is located the middle part of spraying the dish, and first arcwall face encloses to locate plane top surface outside, and the plane top face is connected with first conical surface through first arcwall face, and the diameter of first conical surface increases gradually in the direction from plane top face to spraying the dish.
Optionally, the spacing between the flat top surface and the shower tray ranges from 45 mm to 55 mm.
Optionally, the flat top surface forms a first angle with the first conical surface, and the first angle ranges from 170 degrees to 175 degrees.
Optionally, the dome curved surface further includes a second arc surface, a second conical surface, a third arc surface, a third conical surface, a fourth arc surface and a fourth conical surface, the first conical surface is connected with the second conical surface through the second arc surface, the second conical surface is connected with the third conical surface through the third arc surface, the third conical surface is connected with the fourth conical surface through the fourth arc surface, and the diameters of the second conical surface, the third conical surface and the fourth conical surface are gradually increased in the direction from the flat top surface to the spray disk.
Optionally, a second angle is formed between the first conical surface and the second conical surface, a third angle is formed between the second conical surface and the third conical surface, a fourth angle is formed between the third conical surface and the fourth conical surface, and the second angle, the third angle and the fourth angle are all 160 degrees to 170 degrees.
Optionally, the length of the bus bar of the first conical surface is a first length, the length of the bus bar of the second conical surface is a second length, the length of the bus bar of the third conical surface is a third length, the length of the bus bar of the fourth conical surface is a fourth length, the first length, the second length, the third length and the fourth length are all equal, and the ratio of the radial width of the flat top surface to the first length is in the range of 1.5 to 2.
Optionally, the projection area of the flat top surface on the spray disk is a flat top area, the projection area of the first conical surface on the spray disk is a first area, the projection area of the second conical surface on the spray disk is a second area, the projection area of the third conical surface on the spray disk is a third area, the projection area of the fourth conical surface on the spray disk is a fourth area, and the ratio of the flat top area, the first area, the second area, the third area and the fourth area is equal to 1:1.36:1.68:1.93:2.
Optionally, the dome curved surface further comprises a vertical ring surface, the vertical ring surface is perpendicular to the spray disk, one end of the vertical ring surface is connected with the fourth conical surface, the other end of the vertical ring surface is propped against the spray disk, a fifth angle is formed between the fourth conical surface and the vertical ring surface, and the range of the fifth angle is 130 degrees to 150 degrees.
The utility model provides a fluid vapor deposition device, including spray dish, water conservancy diversion piece and foretell apron, the apron is provided with the dome curved surface, the apron lid is located on the spray dish, the air current cavity is enclosed jointly with the spray dish to the dome curved surface, the hole of stepping down has been seted up at the top of dome curved surface, the hole of stepping down communicates with the air current cavity, the water conservancy diversion piece is installed on the apron, and stretch into the air current cavity setting through the hole of stepping down, the water conservancy diversion piece is used for spouting process gas towards the dome curved surface, the dome curved surface is the non-level face, the dome curved surface is used for carrying out water conservancy diversion to process gas, so that it evenly flows to the spray dish on.
The cover plate and the fluid vapor deposition device provided by the invention have the following beneficial effects:
The cover plate is provided with the dome curved surface, the cover plate is used for being covered on the spray disk, the dome curved surface and the spray disk jointly enclose an airflow cavity, the dome curved surface is a non-flat surface, and the dome curved surface is used for guiding process gas so as to enable the process gas to uniformly flow onto the spray disk. Compared with the prior art, the cover plate provided by the invention has the advantages that the dome curved surface arranged on the non-flat surface is adopted, so that the process gas can be stably guided, the guiding effect is good, the deposition rate is high, the flow speed and the distribution uniformity of the process gas are ensured, and the evenness and the uniformity of film formation are improved.
The fluid vapor deposition device provided by the invention comprises the cover plate, can stably guide the process gas, has good guide effect and high deposition rate, and ensures the flow speed and the distribution uniformity of the process gas, thereby improving the evenness and the uniformity of film formation.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of a fluid vapor deposition apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a fluid vapor deposition apparatus according to an embodiment of the present invention;
Fig. 3 is a schematic structural view of a view angle of a dome curved surface in a cover plate according to an embodiment of the present invention;
fig. 4 is a schematic structural view of another view angle of the dome curved surface in the cover plate according to the embodiment of the present invention.
Icon: 100-a fluid vapor deposition device; 110-cover plate; 111-dome curvature; 1111-a flat top surface; 1112-a first arcuate surface; 1113-a first conical surface; 1114—yield holes; 1115-a second arcuate surface; 1116-a second conical surface; 1117-a third arcuate surface; 1118-a third conical surface; 1119-fourth arcuate surfaces; 1120-a fourth conical surface; 1121-a vertical annulus; 120-a flow guiding block; 121-an air outlet head; 130-a spray tray; 131-air jet; 140-airflow cavity.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "inner", "outer", "upper", "lower", "horizontal", etc., are directions or positional relationships based on those shown in the drawings, or those that are conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or elements referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," "mounted," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Some embodiments of the present invention are described in detail below with reference to the accompanying drawings. Features of the embodiments described below may be combined with each other without conflict.
Referring to fig. 1 to 4 (the hollow arrows in fig. 2 indicate the flow direction of the process gas), a fluid vapor deposition apparatus 100 for performing semiconductor vapor deposition is provided in an embodiment of the present invention. The device can stably guide the process gas, has good guide effect and high deposition rate, and ensures the flow speed and the distribution uniformity of the process gas, thereby improving the evenness and the uniformity of film formation.
The fluid vapor deposition apparatus 100 includes a cover plate 110, a deflector block 120, and a shower tray 130. The cover plate 110 is covered on the spray disk 130, a dome curved surface 111 is arranged on one side of the cover plate 110 close to the spray disk 130, the dome curved surface 111 and the spray disk 130 jointly enclose an air flow cavity 140, and the air flow cavity 140 is used for flowing process gas. The top of dome curved surface 111 has been seted up and has been moved away the hole 1114, and the hole 1114 that moves away communicates with air current cavity 140, and guide block 120 is installed on apron 110, and stretches into air current cavity 140 setting through the hole 1114 that moves away, guide block 120 is used for spouting the process gas into air current cavity 140 to make the process gas flow along dome curved surface 111 towards the direction that is close to spray dish 130, and evenly flow to spray on the dish 130. Specifically, the spray plate 130 is provided with a plurality of gas nozzles 131, the plurality of gas nozzles 131 are arranged on the spray plate 130 at intervals, and the process gas flowing onto the spray plate 130 can be uniformly sprayed into the reaction chamber (not shown) through the plurality of gas nozzles 131, so that the reaction of the process gas is facilitated, and the filling function of the grooves is realized.
Further, since the dome curvature 111 is a non-flat surface, the dome curvature 111 may disturb the process gas in a direction approaching the shower plate 130 along the dome curvature 111, so that the process gas may flow in a mixed direction from different directions, thereby uniformly flowing the process gas onto the shower plate 130.
Notably, the dome curved surface 111 includes a flat top surface 1111, a first arcuate surface 1112, and a first conical surface 1113. Wherein, flat top 1111 and spray disk 130 parallel interval setting, and be located the middle part of spray disk 130, first arcwall face 1112 encloses to locate flat top 1111 outside, flat top 1111 is connected with first conical surface 1113 through first arcwall face 1112, the diameter of first conical surface 1113 is in the direction from flat top 1111 to spray disk 130 progressively increases, in order to realize the diffusion of process gas, make the process gas flow to spray disk 130 evenly, and the first conical surface 1113 that is flaring form setting can increase the space scope of air current cavity 140, so that can have more process gas to flow into air current cavity 140 through guide block 120 in the same time, and flow to the reaction chamber through spray disk 130 and participate in the reaction and film formation, guarantee film formation quality.
Further, the flat top surface 1111 is an annular surface, the yielding hole 1114 is disposed in the middle of the flat top surface 1111, and the yielding hole 1114 is used for yielding the flow guiding block 120. The relief hole 1114 is communicated with the gas flow cavity 140, the flow guiding block 120 is mounted on the cover plate 110, and the flow guiding block 120 extending into the gas flow cavity 140 can spray process gas into the gas flow cavity 140 through the arrangement that the relief hole 1114 extends into the gas flow cavity 140. Specifically, during the process of spraying the process gas into the gas flow cavity 140 by the flow guiding block 120, the flow guiding block 120 sprays the process gas towards the first arc surface 1112 and the first conical surface 1113, and the first arc surface 1112 and the first conical surface 1113 are both used for guiding the process gas so as to uniformly flow onto the spray disk 130, during the process, under the guiding action of the first arc surface 1112, a part of the process gas flowing onto the first arc surface 1112 flows onto the first conical surface 1113, and another part flows into the gas flow cavity 140 along the tangential direction of the end of the first arc surface 1112 away from the flat top surface 1111; the process gas flowing onto the first conical surface 1113 flows in the direction approaching the shower plate 130 in the extending direction of the first conical surface 1113 by the flow guiding action of the first conical surface 1113. In this way, the flow guiding directions of the first arc surface 1112 and the first conical surface 1113 complement each other, so that the process gas can quickly fill the airflow cavity 140 from two different flow directions and uniformly fall onto the spray disk 130, thereby realizing stable flow guiding of the process gas, having good flow guiding effect and high deposition rate, ensuring the flow speed and distribution uniformity of the process gas, and improving the evenness and uniformity of film formation.
It should be noted that the dome curved surface 111 further includes a second curved surface 1115, a second conical surface 1116, a third curved surface 1117, a third conical surface 1118, a fourth curved surface 1119, a fourth conical surface 1120, and a vertical annular surface 1121. The first conical surface 1113 is connected to the second conical surface 1116 through a second arc surface 1115, the second arc surface 1115 is used for realizing a flow guiding transition between the process gas from the first conical surface 1113 to the second conical surface 1116, a part of the process gas flowing from the first conical surface 1113 to the second arc surface 1115 flows onto the second conical surface 1116, and the other part flows into the gas flow cavity 140 along a tangential direction of one end of the second arc surface 1115 away from the first conical surface 1113. Similarly, the second conical surface 1116 is connected to the third conical surface 1118 by a third arcuate surface 1117, the third arcuate surface 1117 is configured to effect a flow-guiding transition of the process gas from the second conical surface 1116 to the third conical surface 1118, a portion of the process gas flowing from the second conical surface 1116 to the third arcuate surface 1117 flows onto the third conical surface 1118, and another portion flows into the gas flow cavity 140 along a tangential direction of an end of the third arcuate surface 1117 away from the second conical surface 1116; the third conical surface 1118 is coupled to the fourth conical surface 1120 by a fourth arcuate surface 1119, the fourth arcuate surface 1119 being configured to provide a flow-directing transition of the process gas from the third conical surface 1118 to the fourth conical surface 1120, a portion of the process gas flowing from the third conical surface 1118 to the fourth arcuate surface 1119 flowing onto the fourth conical surface 1120, and another portion flowing into the gas flow cavity 140 in a tangential direction of an end of the fourth arcuate surface 1119 remote from the third conical surface 1118. In this way, the four arcuate surfaces (first arcuate surface 1112, second arcuate surface 1115, third arcuate surface 1117 and fourth arcuate surface 1119) and the four tapered surfaces (first tapered surface 1113, second tapered surface 1116, third tapered surface 1118 and fourth tapered surface 1120) cooperate to break up and uniformly guide the process gas flowing into the gas flow cavity 140 through the flow guide block 120 to uniformly fall onto the shower tray 130, further ensuring the flow rate and distribution uniformity of the process gas.
Specifically, the diameters of the second conical surface 1116, the third conical surface 1118 and the fourth conical surface 1120 are gradually increased in the direction from the flat top surface 1111 to the spray disk 130, that is, the cross-sectional area of the entire gas flow cavity 140 is gradually increased in the direction from the flat top surface 1111 to the spray disk 130, so as to further increase the spatial range of the gas flow cavity 140, so that more process gas can flow into the gas flow cavity 140 through the flow guiding block 120 at the same time, flow to the reaction chamber through the spray disk 130 to participate in reaction and film formation, and film formation quality is ensured.
Further, the vertical annular surface 1121 is disposed perpendicular to the shower plate 130, one end of the vertical annular surface 1121 is connected to the fourth conical surface 1120, the other end is supported against the shower plate 130, and the process gas flowing onto the fourth conical surface 1120 flows onto the shower plate 130 along a direction perpendicular to the shower plate 130 through the vertical annular surface 1121, and the vertical annular surface 1121 is used for improving the tightness between the cover plate 110 and the shower plate 130, thereby improving the air tightness of the air flow cavity 140 and preventing the process gas from flowing out from the gap between the cover plate 110 and the shower plate 130.
In this embodiment, the number of the arcuate surfaces and the tapered surfaces is four, but not limited thereto, and in other embodiments, the number of the arcuate surfaces and the tapered surfaces may be three or five, and the number of the arcuate surfaces and the tapered surfaces is not particularly limited.
In this embodiment, the first curved surface 1112, the second curved surface 1115, the third curved surface 1117 and the fourth curved surface 1119 are all made by a rounding process, and have smaller radians, so as to realize arc transition between the flat top surface 1111 and the first conical surface 1113, between the first conical surface 1113 and the second conical surface 1116, between the second conical surface 1116 and the third conical surface 1118, and between the third conical surface 1118 and the fourth conical surface 1120, respectively, thereby facilitating the production and processing of the whole cover plate 110.
It should be noted that, the distance between the flat top 1111 and the shower tray 130 ranges from 45 mm to 55 mm, and the reasonable distance between the flat top 1111 and the shower tray 130 can increase the space range of the air flow cavity 140 as much as possible under the condition of meeting the external dimension requirement of the fluid vapor deposition device 100. In the present embodiment, the distance between the flat top 1111 and the shower tray 130 is 50 mm, but not limited thereto, and in other embodiments, the distance between the flat top 1111 and the shower tray 130 may be 45 mm or 55 mm, and the distance between the flat top 1111 and the shower tray 130 is not particularly limited.
Further, the length of the guide block 120 extending into the flat top surface 1111 ranges from 20mm to 30 mm, and the reasonable length of the guide block 120 extending into the flat top surface 1111 can ensure that the guide block 120 is matched with the yielding hole 1114, and the process gas sprayed out of the guide block 120 can stably flow onto the first arc-shaped surface 1112 and the first conical surface 1113. In the present embodiment, the length of the guide block 120 extending into the flat top 1111 is 25 mm, but is not limited thereto, and in other embodiments, the length of the guide block 120 extending into the flat top 1111 may be 20mm or 30 mm, and the length of the guide block 120 extending into the flat top 1111 is not particularly limited.
Specifically, an air outlet head 121 is disposed at one end of the flow guiding block 120 near the spray disk 130, a plurality of air outlets (not shown) are disposed on the circumferential surface of the air outlet head 121, and the plurality of air outlets are distributed in a ring-shaped array, and the plurality of air outlets cooperate to uniformly spray the process gas from the periphery of the air outlet head 121 to the outside, so as to ensure that the process gas flows onto the first arc-shaped surface 1112 and the first conical surface 1113. The outer diameter of the gas outlet head 121 ranges from 32 mm to 50 mm, the outer diameter of the gas outlet head 121 is the maximum diameter of the gas outlet head 121, and the reasonable outer diameter of the gas outlet head 121 can increase the outlet flow of the process gas, so as to ensure the uniformity of the flow of the process gas. In the present embodiment, the outer diameter of the air outlet head 121 is 40 mm, but not limited thereto, and in other embodiments, the outer diameter of the air outlet head 121 may be 32 mm or 50 mm, and the outer diameter of the air outlet head 121 is not particularly limited.
In this embodiment, the flat top 1111 and the first taper 1113 form a first angle therebetween, and the first angle ranges from 170 degrees to 175 degrees; a second angle is formed between the first conical surface 1113 and the second conical surface 1116, a third angle is formed between the second conical surface 1116 and the third conical surface 1118, a fourth angle is formed between the third conical surface 1118 and the fourth conical surface 1120, and the second angle, the third angle and the fourth angle are all in the range of 160 degrees to 170 degrees; a fifth angle is formed between the fourth tapered surface 1120 and the vertical annular surface 1121, and the fifth angle ranges from 130 degrees to 150 degrees; the reasonable first angle, the second angle, the third angle, the fourth angle and the fifth angle can enhance the stability of the flow of the process gas under the condition of ensuring the flow rate of the process gas, prevent the process gas from scattering and sputtering caused by the abrupt change of the angles, and avoid turbulent flow.
It is noted that the bus bar length of the first conical surface 1113 is a first length, the bus bar length of the second conical surface 1116 is a second length, the bus bar length of the third conical surface 1118 is a third length, and the bus bar length of the fourth conical surface 1120 is a fourth length, and the first length, the second length, the third length and the fourth length are all equal to improve the stability and uniformity of the flow of the process gas. Further, the ratio of the radial width of the flat top 1111 to the first length is in the range of 1.5 to 2, and the reasonable ratio of the radial width of the flat top 1111 to the first length can make the flow distance of the process gas ejected from the flow guiding block 120 to the first conical surface 1113 moderate, so as to ensure the flow speed and stability of the process gas.
In this embodiment, the projection area of the flat top 1111 on the spray disk 130 is the flat top 1111 area, the projection area of the first conical surface 1113 on the spray disk 130 is the first area, the projection area of the second conical surface 1116 on the spray disk 130 is the second area, the projection area of the third conical surface 1118 on the spray disk 130 is the third area, the projection area of the fourth conical surface 1120 on the spray disk 130 is the fourth area, and the ratio of the flat top 1111 area, the first area, the second area, the third area and the fourth area is equal to 1:1.36:1.68:1.93:2, the reasonable ratio of the flat top 1111 area, the first area, the second area, the third area and the fourth area enables the process gas to stably diffuse in the direction from the flat top 1111 to the shower tray 130, and improves the uniformity of the process gas flow, thereby improving the flatness and uniformity of the film formation.
In the cover plate 110 provided by the embodiment of the invention, the cover plate 110 is provided with the dome curved surface 111, the cover plate 110 is covered on the spray disk 130, the dome curved surface 111 and the spray disk 130 jointly enclose the airflow cavity 140, the dome curved surface 111 is a non-flat surface, and the dome curved surface 111 is used for guiding the process gas so as to enable the process gas to uniformly flow onto the spray disk 130. Compared with the prior art, the cover plate 110 provided by the invention has the advantages that the dome curved surface 111 with the non-flat surface is adopted, so that the process gas can be stably guided, the guiding effect is good, the deposition rate is high, the flow speed and the distribution uniformity of the process gas are ensured, and the evenness and the uniformity of film formation are improved. The fluid vapor deposition device 100 is stable and reliable, high in deposition efficiency and good in deposition effect.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. The cover plate is used for being applied to a fluid vapor deposition device and is provided with a spray disk, and is characterized in that the cover plate is provided with a dome curved surface, the cover plate is used for being covered on the spray disk, the dome curved surface and the spray disk jointly enclose an airflow cavity, the dome curved surface is a non-flat surface, and the dome curved surface is used for guiding process gas so as to enable the process gas to uniformly flow onto the spray disk;
The dome curved surface comprises a flat top surface, a first arc-shaped surface and a first conical surface, wherein the flat top surface is arranged at intervals parallel to the spray disk and positioned in the middle of the spray disk, the first arc-shaped surface is arranged outside the flat top surface in a surrounding mode, the flat top surface is connected with the first conical surface through the first arc-shaped surface, and the diameter of the first conical surface is gradually increased in the direction from the flat top surface to the spray disk.
2. The deck as recited in claim 1 wherein the spacing between said flat top surface and said shower tray ranges from 45 millimeters to 55 millimeters.
3. The cover plate of claim 1, wherein the flat top surface forms a first angle with the first tapered surface, the first angle ranging from 170 degrees to 175 degrees.
4. The cover plate of claim 1, wherein the dome curvature further comprises a second arcuate surface, a second conical surface, a third arcuate surface, a third conical surface, a fourth arcuate surface, and a fourth conical surface, the first conical surface being connected to the second conical surface by the second arcuate surface, the second conical surface being connected to the third conical surface by the third arcuate surface, the third conical surface being connected to the fourth conical surface by the fourth arcuate surface, the diameters of the second conical surface, the third conical surface, and the fourth conical surface each increasing in a direction from the flat top surface to the spray disk.
5. The cover plate of claim 4, wherein a second angle is formed between the first tapered surface and the second tapered surface, a third angle is formed between the second tapered surface and the third tapered surface, a fourth angle is formed between the third tapered surface and the fourth tapered surface, and the second angle, the third angle, and the fourth angle are all in the range of 160 degrees to 170 degrees.
6. The cover plate of claim 4, wherein the first tapered surface has a first length of a bus bar, the second tapered surface has a second length of a bus bar, the third tapered surface has a third length of a bus bar, the fourth tapered surface has a fourth length of a bus bar, the first length, the second length, the third length, and the fourth length are all equal, and a ratio of the radial width of the flat top surface to the first length is in a range of 1.5 to 2.
7. The cover plate of claim 4, wherein the projected area of the flat top surface on the spray disk is a flat top area, the projected area of the first conical surface on the spray disk is a first area, the projected area of the second conical surface on the spray disk is a second area, the projected area of the third conical surface on the spray disk is a third area, the projected area of the fourth conical surface on the spray disk is a fourth area, and the ratio of the flat top area, the first area, the second area, the third area, and the fourth area is equal to 1:1.36:1.68:1.93:2.
8. The cover plate of claim 4, wherein the dome curvature further comprises a vertical annulus, the vertical annulus is perpendicular to the spray plate, one end of the vertical annulus is connected with the fourth conical surface, the other end of the vertical annulus is abutted against the spray plate, a fifth angle is formed between the fourth conical surface and the vertical annulus, and the fifth angle ranges from 130 degrees to 150 degrees.
9. A fluid vapor deposition device, comprising a spray disk, a diversion block and a cover plate according to any one of claims 1 to 8, wherein a yielding hole is formed in the top of the dome curved surface, the yielding hole is communicated with the airflow cavity, the diversion block is mounted on the cover plate and extends into the airflow cavity through the yielding hole, and the diversion block is used for spraying process gas towards the dome curved surface.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310713243.9A CN116752121B (en) | 2023-06-15 | 2023-06-15 | Cover plate and fluid vapor deposition device |
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| CN202310713243.9A CN116752121B (en) | 2023-06-15 | 2023-06-15 | Cover plate and fluid vapor deposition device |
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| CN116752121B true CN116752121B (en) | 2024-05-14 |
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| CN116752121A (en) | 2023-09-15 |
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