CN104576448A - Heat treatment equipment - Google Patents
Heat treatment equipment Download PDFInfo
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- CN104576448A CN104576448A CN201410563389.0A CN201410563389A CN104576448A CN 104576448 A CN104576448 A CN 104576448A CN 201410563389 A CN201410563389 A CN 201410563389A CN 104576448 A CN104576448 A CN 104576448A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 32
- 239000011261 inert gas Substances 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 93
- 239000007789 gas Substances 0.000 claims abstract description 44
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000005286 illumination Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 29
- 239000001301 oxygen Substances 0.000 abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 abstract description 29
- 239000012535 impurity Substances 0.000 abstract description 23
- 238000002347 injection Methods 0.000 abstract 4
- 239000007924 injection Substances 0.000 abstract 4
- 239000010408 film Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- 238000000034 method Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 208000005632 oculopharyngodistal myopathy Diseases 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention provides heat treatment equipment. The heat treatment equipment comprises a treatment chamber with a substrate processing space, a light source arranged at the outer part of the treatment chamber for outputting light, and a stagnation groove, the light source irradiates light to a substrate arranged in the processing chamber, the stagnation groove is arranged above the substrate in the processing chamber and provided with an inner space, the light emitted from the light source and inert gas penetrates through the inner space and are led to the substrate, and the stagnation groove is upwardly defined from the lower side so that the inert gas is stored in the stagnation groove and stagnated in the stagnation groove. According to the embodiment, the inert gas stored in the stagnation groove can be defined in the lower part of a gas injection module. Therefore, the stagnated inert gas is filled in the space between the lower part of the gas injection module and the top surface of the substrate so that even though oxygen and impurities exist at the outer part of the gas injection module in the processing chamber, the oxygen can be prevented from being led to the space between the substrate and the gas injection module.
Description
Technical field
The present invention relates to a kind of equipment for Heating Processing, and or rather, relate to a kind of comprising and spray inert gas with the equipment for Heating Processing preventing substrate to be exposed to the gas jet module of oxygen or impurity.
Background technology
In the process manufacturing liquid crystal display and photovoltaic device, relate to the heat treatment process for making amorphous polycrystal film (such as, amorphous polysilicon membrane) crystallization.Herein, if glass is used as substrate, so amorphous polycrystal film can carry out crystallization by using laser.But, as amorphous polycrystal film and oxygen (O
2) reaction time, amorphous polycrystal film may be oxidized to generate sull.
Fig. 1 is the schematic diagram of the laser thermal processing apparatus according to prior art.With reference to figure 1, the laser thermal processing apparatus according to prior art comprises: treatment chamber 10, and it has the space that substrate 1 carries out processing wherein; Transmission window 40, to allow laser light on its top being placed in treatment chamber; And light source 30, its to be placed in above transmission window and treatment chamber 10 outside with Output of laser 8.According to described laser thermal processing apparatus, the laser 8 exported from light source 30 can be irradiated to through transmission window 400 and subsequently the substrate 1 that moves horizontally.
If the top area of the substrate 1 that laser 8 irradiates thereon is exposed to oxygen, so when polycrystal film 11 crystallization on the top surface being deposited on substrate 1, polycrystal film may can not become silicon metal, but oxidized.In order to solve above-mentioned restriction, 2002-93738 Japanese Patent Publication case discloses a kind of equipment for Heating Processing, and described equipment for Heating Processing can form atmosphere of inert gases above laser irradiation substrate 1 thereon.As illustrated in figure 2, equipment for Heating Processing comprises: shadow shield part 9, and it has laser and inert gas through inner space wherein; Gas introduces unit 10, and its side being connected to shadow shield part 9 is with supplying inert gas; And light source 6, its be placed in above shadow shield part 9 with by Laser output in shadow shield part 9.Further, substrate 1 is placed under shadow shield part 9, and gap 9a is defined in the lower end of shadow shield part 9, and laser and inert gas are discharged on substrate 1 through described gap.Therefore, when the laser 8 sent from light source 6 is irradiated to formation polycrystal film 11 on substrate 1, inert gas can be fed in shadow shield part 9 to form inert atmosphere on the surface of substrate 1.
But even if inert gas is ejected on substrate 1 through shadow shield part 9, the inert gas sprayed also may exhaust through the side of shadow shield part 9 or substrate 1 fast.Therefore, in the space that may be difficult to prevent oxygen from penetrating between substrate 1 and shadow shield part 9.As described above, due to the infiltration of oxygen, the film that the top surface of substrate 1 is formed may be oxidized to produce defect.
[prior art document]
[patent documentation]
(patent documentation 1) 2002-93738 Japanese Patent Publication case
Summary of the invention
The invention provides a kind of equipment for Heating Processing, described equipment for Heating Processing air inclusion jet module, described gas jet module sprays inert gas and is exposed to oxygen and impurity to prevent substrate.
The present invention also provides a kind of equipment for Heating Processing, and the inert gas be wherein ejected on substrate that laser is irradiated on it does not exhaust in outside, but is stuck in described types of flexure.
According to described embodiment, equipment for Heating Processing comprises: treatment chamber, wherein has substrate processing space; Light source, it is outside to export light that it is placed in described treatment chamber, and described light source light shines on the substrate that is loaded in described treatment chamber; And stagnation groove, it is placed in types of flexure and has inner space in described treatment chamber, the light sent from light source and inert gas pass described inner space and are directed into described substrate, described stagnation groove upwards defines from downside, to be accommodated in described stagnation groove and to be stuck in described stagnation groove to make inert gas.
Described equipment for Heating Processing can comprise transmission window further, and described transmission window is placed in the top of described treatment chamber to allow the light exported from described light source to be transmitted.
Described gas jet module can comprise: inert gas chamber, described inert gas chamber to be placed between transmission window and substrate and to have light and inert gas through inner space wherein, described inert gas chamber has the first gap being arranged in its lower end, and light and inert gas are through described first gap; And plate, described plate to be placed between inert gas chamber and substrate and to have the second gap with the first gap area, described plate extends with from inert gas chamber outwardly, and to stagnate groove be the groove with the concave shape upwards caved in from the lower surface of described plate.
The width of each in described plate and described stagnation groove can be greater than the width of the inner space of described inert gas chamber.
Each in the lower surface of described plate and the top surface of described stagnation groove can have the shape of tool predetermined curvature.
Each in the lower surface of described plate and the top surface of described stagnation groove can have circular arc or bowed shape.
Described stagnation groove can have smooth top surface.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings can understand exemplary embodiment in more detail.
Fig. 1 is the schematic diagram of the laser thermal processing apparatus according to prior art.
Fig. 2 is the schematic diagram through revise example of diagram according to the laser thermal processing apparatus of prior art.
Fig. 3 is the cross-sectional view of the equipment for Heating Processing according to an exemplary embodiment.
Fig. 4 is the partial enlargement cross-sectional view of the equipment for Heating Processing for illustration of plate according to an exemplary embodiment.
Fig. 5 is the partial enlargement cross-sectional view of the equipment for Heating Processing for illustration of plate according to another exemplary embodiment.
Embodiment
Hereinafter, specific embodiment is described in detail with reference to accompanying drawing.But the present invention can use multi-form enforcement, and should not be construed as limited to embodiment described in this paper.In fact, provide these embodiments to make the present invention by for thorough and complete, and will fully pass on scope of the present invention to those skilled in the art.
Fig. 3 is the cross-sectional view of the equipment for Heating Processing according to an exemplary embodiment.Fig. 4 is the partial enlargement cross-sectional view of the equipment for Heating Processing for illustration of plate according to an exemplary embodiment.Fig. 5 is the partial enlargement cross-sectional view of the equipment for Heating Processing for illustration of plate according to another exemplary embodiment.
Referring to figs. 3 to Fig. 4, the equipment for Heating Processing according to an exemplary embodiment comprises: treatment chamber 100, and it has the space that substrate S carries out processing wherein; Platform 200, it is placed in treatment chamber 100 substrate S to be placed on it and to process travel direction flatly translate substrate S; Light source 300, it is placed in treatment chamber 100 outside to export light, such as, for the treatment of the laser of substrate S; Transmission window, it is placed in a part for the upper wall for the treatment of chamber 100 to allow the laser light exported from light source 300; And gas jet module 500, it is placed between transmission window 400 that substrate S lays in platform 200 thereon and treatment chamber 100 to be irradiated to by the laser through transmission window 400 in substrate S and to be ejected in substrate S by inert gas.
Treatment chamber 100 can have the transverse cross-sectional area of square cylindrical shape, but is limited to this.For example, the shape for the treatment of chamber 100 can change the shape to correspond to substrate S.Such as, the transmission window 400 formed by quartz is placed in the upper wall for the treatment of chamber 100.Transmission window 400 can be placed in a part for the upper wall for the treatment of chamber with the top of blanket gas jet module 500.Transmission window 400 can blanket gas jet module 500 top or be placed in the upper wall for the treatment of chamber, but to be not limited thereto.For example, transmission window 400 can be provided in the laser exported from light source 300 and is directed into any position gas jet module 500.
Treatment chamber 100 can have hermetically-sealed construction.Therefore, oxygen (O
2) or impurity may reside in treatment chamber 100.Herein, oxygen (O
2) film 11 be formed in substrate S may be oxidized, and the powder having fine granulation that impurity can be tool to be generated during processing, or gaseous state process accessory substance or other pollutant.Impurity can make the characteristic of the reduction of the quality of film 11 or change film 11 to cause product defects.
In order to solve due to oxygen (O
2) infiltration and the restriction that causes of impurity, gas jet module 500 can blow inert gas and form atmosphere of inert gases with the overlying regions irradiating substrate S thereon at laser.Gas jet module 500 can be referred to as oxygen partial bleeder module (oxygen partial degassingmodule, OPDM).
Gas jet module 500 comprises the main body 510 be placed in above platform 200, and substrate S is laid on the platform.Predetermined space can be defined in the region corresponding to the main body 510 between transmission window 400 and substrate S.Can be irradiated in substrate S through predetermined space by the laser of transmission window 400, and inert gas also can be ejected in substrate S through predetermined space.For convenience of description, region corresponding to the main body 510 between transmission window 400 and substrate S is defined as and laser and inert gas can be referred to as " inert gas chamber 520 " through predetermined space wherein.
Same explanation gas jet module 500, the gas jet module 500 according to an exemplary embodiment comprises: main body 510; Inert gas chamber 520, it is by corresponding to main body 510 between transmission window 400 and platform 200 at least partially, and has laser and inert gas through inner space wherein; Inert gas supply pipe 530, it is placed in main body 510 and its one end and is communicated with the inside of inert gas chamber 520 with by inert gas (such as nitrogen (N
2) gas) be fed in inert gas chamber 520; And plate 540, it is connected to the bottom of inert gas chamber 520 and is placed between inert gas chamber 520 and substrate S, and has the stagnation groove 540b upwards defined from its lower surface.Herein, the same position that main body 510 is described, main body 510 can have following structure: main body 510 is positioned to the outside around inert gas chamber 520.
As described above, inert gas chamber 520 has inner space, and described inner space is defined as the main body 510 by corresponding between transmission window 400 and substrate S.As illustrated in Figure 3, inner space can have preset width by main body 510 on vertical (that is, highly) direction.Herein, the vertical length (or height) being greater than its horizontal width can be had according to the inert gas chamber 520 of an exemplary embodiment.The upper opening of inert gas chamber 520 can be covered by transmission window 400 or cover.Further, can define gap 520a (hereinafter, being referred to as the first gap 520a) in the bottom of inert gas chamber 520, linear laser (that is, laser beam) and inert gas can pass described gap.The bottom of the inwall of inert gas chamber 520 can have the shape that internal diameter reduces gradually downwards.In more detail, as illustrated in Figure 4, the inner lower of inert gas chamber 520 can have the internal diameter reduced gradually on the direction of the first gap 520a.Further, the inner lower of inert gas chamber 520 can have predetermined curvature or curved shape.
Although main body 510 is separated from one another as described above with inert gas chamber 520, main body 510 and inert gas chamber 520 can be integrated each other.
Inert gas supply pipe 530 can be the unit for being fed to by inert gas in inert gas chamber 520.Can to be placed in main body 510 according to the insertion feed tube 530 of an exemplary embodiment and to be connected to the side of inert gas chamber 520.That is, inert gas supply pipe 530 can extend in main body 510.Further, an end of inert gas supply pipe 530 can be connected to the side of inert gas chamber 520 and the other end is connected to gas storage unit (not shown), and inert gas leaves in described gas storage unit.Inert gas supply pipe 530 can be provided as the pipe of the pipe shape be inserted in main body 510.Insert feed tube 530 and can be designed such that one end thereof is connected to the side of inert gas chamber 520, or the inside of main body 510 is treated to be communicated with the side of inert gas chamber 520.Further, inert gas supply pipe 530 can have the double pipe structure be made up of outermost tubes, that is, exterior tube and the inner tube being placed in described exterior tube inside.Herein, if be connected to inert gas chamber 520 to be referred to as discharge slit with end inert gas being discharged into the inert gas supply pipe 530 in inert gas chamber 520, so described discharge slit can be downward-sloping with wire shaped as illustrated in Figure 3.Further, at least one part corresponding to the region of the inert gas supply pipe 530 of the front end of discharge slit can have the channel shape of bending several times, that is, bent several times.
Certainly, inert gas supply pipe 530 can be not limited to above-mentioned shape.For example, inert gas supply pipe 530 can become the various shapes being enough to supplying inert gas.
Discharge from gas jet module 500 and be ejected into inert gas (such as, the nitrogen (N substrate S subsequently
2) gas) can will be retained in the oxygen (O (or rather, irradiated at laser on the region of substrate S thereon) above substrate S
2) and impurity drive away to form atmosphere of inert gases in the space between gas jet module 500 and substrate S.Herein, plate 540 can be provided to allow inert gas wall type dispersion on the whole top surface of substrate S of discharging from the first gap 520a of inert gas chamber 520.Plate 540 extends on left/right (or width) direction of inert gas chamber and substrate S.
Hereinafter, the plate according to an exemplary embodiment will be described in more detail.
As illustrated in figs. 3 and 4, can have according to the plate 540 of an exemplary embodiment low portion and inert gas chamber 520 that are connected to main body 510 and there is the plate shape of the cross section of square shape.Gap 540a (hereinafter, being referred to as the second gap 540a) can be defined in below the first gap 520a, and laser and inert gas are through gap 540a.In more detail, plate 540 can have the plate shape extended from the first gap 520a be defined in the two directions inert gas chamber 520.Plate 540 can have the length on left/right direction, that is, be greater than the width of inert gas chamber 520 and be less than the width of the width of substrate S.
Stagnating groove 540b is defined in plate 540, and in described stagnation groove, inert gas is filled in the space (or gap) between the lower surface of plate 540 and substrate S.Being filled into the inert gas stagnated in groove 540b can prevent the oxygen of gas jet module 500 outside and dopants penetration in the space between plate 540 and substrate.That is, plate 540 can have the groove upwards defining to receive inert gas from the bottom of plate 540, that is, stagnate groove 540b.Therefore, the lower surface according to the plate of an exemplary embodiment can not be smooth horizontal plane, but has difference in height.That is, fringe region, that is, the outermost edge region of the lower surface of plate 540, can higher than the region of the fringe region inside be defined on left/right direction in the lower surface of plate 540.Therefore, when inert gas is fed to the downside of plate 540 from inert gas chamber 520, the flowing of inert gas can be stopped by the fringe region of plate 540 or cover to prevent inert gas depleted in outside, and inert gas can stagnate the scheduled time subsequently.Therefore, the time that inert gas exhausts in the outside of substrate S through the second gap 540a may be greater than the time according to prior art.Further, if inert gas is supplied continuously, so the pressure stagnated in groove 540b can increase more compared with the pressure of gas jet module 500 outside.Can prevent from being retained in the oxygen of gas jet module 500 outside and dopants penetration in the space between plate 540 and substrate S by pressure differential.
The lower surface of plate 540, that is, the top surface stagnating groove 540b can have predetermined curvature.That is, as illustrated in figs. 3 and 4, plate 540 can have circular arc or bowed shape, and wherein the height of the lower surface of plate 540 increases gradually from the edge of plate 540 on the direction of the second gap 540a.
As described above, plate 540 has circular arc or bowed shape, and wherein the lower surface of plate 540 or the top surface of stagnation groove 540b have predetermined curvature.But, the present invention is not limited thereto.For example, as illustrated in figure 2, according to another exemplary embodiment, the top surface stagnating groove 540b can be smooth.That is, can have according to the stagnation groove 540b of the plate of another exemplary embodiment the spherical shape opened bottom.That is, groove upwards can define from the bottom of plate 540.Herein, groove can have smooth top surface, but does not have bending top surface.
Therefore, according to described exemplary embodiment, the inert gas discharged through the second gap 540a can outwards promote to be present in the oxygen below gas jet module 500 and impurity.Therefore, oxygen and impurity can be dispersed in the lower surface of plate 540 bearing of trend on and can not by the fringe region of the lower surface of plate 540 outwardly.Therefore, the inert gas be ejected in the downside of gas jet module 500 can be similar to correlation technique and outwards not exhaust, but one period of scheduled time in stagnation groove 540b in being stuck in the bottom being defined in plate 540.Further, if inert gas is supplied continuously, so the pressure stagnated in groove 540b can higher than the pressure of gas jet module 500 outside.Therefore, even if the gas jet module 500 that oxygen and impurity are present in treatment chamber is outside, in the space that oxygen and impurity also can be prevented to be introduced between substrate S and gas jet module 500.Therefore, the top area of the substrate irradiated thereon due at least laser is not exposed to oxygen and impurity, thus be formed in amorphous polycrystal film 11 on the top surface of substrate S may not oxidized with prevent film pollute by impurity or change characteristic.
Although the light sent from light source 300 or the light be irradiated to for the treatment of substrate S substrate S are described to laser, the present invention is not limited thereto.For example, the various light for the treatment of substrate S can be adopted according to the object of process.
Hereinafter, the method using and according to the equipment for Heating Processing of an exemplary embodiment, film is carried out to crystallization is described through with reference to Fig. 3 to Fig. 4.
First, amorphous polycrystal film 11 (such as, amorphous polysilicon membrane) is formed on glass substrate S.Further, the substrate S that amorphous polysilicon membrane is formed thereon can be loaded in the treatment chamber 10O of equipment for Heating Processing and to be placed on platform 200.
When substrate S is placed on platform 200, laser can be irradiated on the film 11 that is formed in substrate S while substrate S is flatly transferred through platform 200 on process travel direction.That is, light source 300 can be operated to export light, that is, from the laser of light source 300.Subsequently, the laser of output can be irradiated in inert gas chamber 520 through transmission window 400 and to be irradiated to through the first gap 520a and the second gap 540a on the film 11 that is formed in substrate S.Therefore, the amorphous polysilicon membrane be formed in substrate S can with laser reactive to form crystal silicon film.
As described above, while laser is irradiated in substrate S, in the upside that inert gas can be ejected into substrate or film 11.For this reason, as inert gas (such as, nitrogen (N
2) gas) when being supplied in inert gas chamber 520 through inert gas supply pipe 530, nitrogen can be injected on described substrate through the second gap 540a be provided in plate 540 via the first gap 520a of inert gas chamber 520.Further, the nitrogen be discharged in substrate S through the second gap 540a can disperse relative to the central cross of the second gap 540a.Herein, oxygen between plate 540 and substrate S is retained in and impurity can be pushed laterally through the hole.That is, the nitrogen discharged through the second gap 540a can disperse and in stagnation groove 540b in being filled into the bottom being defined in plate 540.Herein, oxygen between plate 540 and substrate S and impurity can be pushed to gas jet module 500 and substrate S outside by nitrogen is present in.Further, as described above, the nitrogen discharged through the second gap 540a can be distributed in space the lower surface of plate 540 and substrate S or gap.Therefore, outwardly can being stopped by the fringe region of the lower surface of plate 540 of nitrogen gas.Being ejected into nitrogen in the downside of plate 540 may be outside not depleted at plate 540, but is stuck in one period of scheduled time in the stagnation groove 540b that is defined in the bottom of plate.Therefore, the inert gas time be stuck between plate 540 and substrate S may be greater than the time according to prior art.Further, if inert gas is supplied continuously, so the pressure stagnated in groove 540b may increase more compared with the pressure of gas jet module 500 outside.Can prevent from being present in the oxygen of gas jet module 500 outside by pressure differential and impurity is introduced in the space between plate 540 and substrate S.
Therefore, owing to being formed in substrate S on the top surface of substrate S and silicon thin film is not exposed to oxygen and impurity, so be different from prior art, substrate S and film may be not oxidized.In more detail, because at least laser irradiates substrate S thereon or film is not exposed to oxygen and impurity, so the silicon thin film that laser irradiates thereon may be not oxidized to form crystal silicon film.
According to described embodiment, stagnate groove and can be provided in the bottom of gas jet module, inert gas is received and is stuck in described stagnation groove.Therefore, the inert gas discharged downwards from gas jet module may be not depleted in outside, but be stuck in one period of scheduled time in stagnation groove.Therefore, because the space between the bottom of gas jet module and the top surface of substrate is filled with the inert gas of stagnation, so the internal pressure in space between gas jet module and substrate may be greater than the pressure of the outside of gas jet module.Therefore, even if the gas jet module that oxygen and impurity are present in treatment chamber is outside, oxygen and impurity also can be prevented to be incorporated in the space between substrate and gas jet module.Therefore, the top area of the substrate irradiated thereon due at least laser is not exposed to oxygen and impurity, so when forming thin film crystallization on the top surface of the substrate, described film is possible not oxidized to prevent from occurring defective process due to impurity.
Although describe equipment for Heating Processing with reference to specific embodiment, it is not limited thereto.Therefore, those skilled in the art will readily appreciate that, when not departing from the spirit and scope of the present invention defined by appended claims, can carry out various amendment and change to it.
Claims (7)
1. an equipment for Heating Processing, is characterized in that comprising:
Treatment chamber, wherein has substrate processing space;
Light source, it is outside to export light that it is placed in described treatment chamber, and described illumination is mapped on the substrate that is loaded in described treatment chamber by described light source; And
Stagnate groove, it is placed in the described types of flexure in described treatment chamber and has inner space, the described light sent from described light source and inert gas pass described inner space and are directed into described substrate, described stagnation groove upwards defines from downside, to be accommodated in described stagnation groove and to be stuck in described stagnation groove to make described inert gas.
2. equipment for Heating Processing according to claim 1, it comprises transmission window further, and described transmission window is placed in the top of described treatment chamber to allow the described light exported from described light source to be transmitted.
3. equipment for Heating Processing according to claim 2, it comprises gas jet module further, and wherein said gas jet module comprises:
Inert gas chamber, described inert gas chamber to be placed between described transmission window and described substrate and to have described light and described inert gas through inner space wherein, described inert gas chamber has the first gap being arranged in its lower end, and described light and described inert gas are through described first gap; And
Plate, described plate to be placed between described inert gas chamber and described substrate and to have the second gap with described first gap area, and described plate extends with from described inert gas chamber outwardly, and
Described stagnation groove is the groove with the concave shape upwards caved in from the lower surface of described plate.
4. equipment for Heating Processing according to claim 3, the width of each in wherein said plate and described stagnation groove is greater than the width of the described inner space of described inert gas chamber.
5. equipment for Heating Processing according to claim 4, each in the described lower surface of wherein said plate and the top surface of described stagnation groove has the shape of tool predetermined curvature.
6. equipment for Heating Processing according to claim 5, each in the described lower surface of wherein said plate and the top surface of described stagnation groove has circular arc or bowed shape.
7. equipment for Heating Processing according to claim 3, wherein said stagnation groove has smooth top surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020130125278A KR101777761B1 (en) | 2013-10-21 | 2013-10-21 | treatment equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113843123A (en) * | 2021-09-27 | 2021-12-28 | 常熟五临天光电科技有限公司 | Irradiation device and system convenient for air removal |
| CN113857012A (en) * | 2021-09-27 | 2021-12-31 | 常熟五临天光电科技有限公司 | Illumination processing system convenient to air is got rid of |
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| US20020035962A1 (en) * | 2000-09-22 | 2002-03-28 | Takeshi Sakuma | Photo-excited gas processing apparatus for semiconductor process |
| KR20090042879A (en) * | 2007-05-23 | 2009-05-04 | 가부시끼가이샤 니혼 세이꼬쇼 | Gas injection mean for use with laser processing apparatus |
| KR20110003159A (en) * | 2009-07-03 | 2011-01-11 | 에이피시스템 주식회사 | Laser annealing apparatus having oxygen partial degassing module |
| CN102405511A (en) * | 2009-04-20 | 2012-04-04 | 应用材料公司 | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
| CN102460648A (en) * | 2009-06-07 | 2012-05-16 | 维易科精密仪器国际贸易(上海)有限公司 | Roll-to-roll chemical vapor deposition system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009099917A (en) | 2007-10-19 | 2009-05-07 | Ulvac Japan Ltd | Laser annealing apparatus |
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Patent Citations (5)
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|---|---|---|---|---|
| US20020035962A1 (en) * | 2000-09-22 | 2002-03-28 | Takeshi Sakuma | Photo-excited gas processing apparatus for semiconductor process |
| KR20090042879A (en) * | 2007-05-23 | 2009-05-04 | 가부시끼가이샤 니혼 세이꼬쇼 | Gas injection mean for use with laser processing apparatus |
| CN102405511A (en) * | 2009-04-20 | 2012-04-04 | 应用材料公司 | Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls |
| CN102460648A (en) * | 2009-06-07 | 2012-05-16 | 维易科精密仪器国际贸易(上海)有限公司 | Roll-to-roll chemical vapor deposition system |
| KR20110003159A (en) * | 2009-07-03 | 2011-01-11 | 에이피시스템 주식회사 | Laser annealing apparatus having oxygen partial degassing module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113843123A (en) * | 2021-09-27 | 2021-12-28 | 常熟五临天光电科技有限公司 | Irradiation device and system convenient for air removal |
| CN113857012A (en) * | 2021-09-27 | 2021-12-31 | 常熟五临天光电科技有限公司 | Illumination processing system convenient to air is got rid of |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150046424A (en) | 2015-04-30 |
| KR101777761B1 (en) | 2017-09-13 |
| CN104576448B (en) | 2018-10-19 |
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