CN104576448B - Equipment for Heating Processing - Google Patents
Equipment for Heating Processing Download PDFInfo
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- CN104576448B CN104576448B CN201410563389.0A CN201410563389A CN104576448B CN 104576448 B CN104576448 B CN 104576448B CN 201410563389 A CN201410563389 A CN 201410563389A CN 104576448 B CN104576448 B CN 104576448B
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- inert gas
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- stagnate
- plate
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 33
- 239000011261 inert gas Substances 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 239000007789 gas Substances 0.000 claims abstract description 53
- 238000002347 injection Methods 0.000 claims abstract description 34
- 239000007924 injection Substances 0.000 claims abstract description 34
- 230000005540 biological transmission Effects 0.000 claims description 23
- 238000005286 illumination Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 29
- 239000001301 oxygen Substances 0.000 abstract description 29
- 229910052760 oxygen Inorganic materials 0.000 abstract description 29
- 239000012535 impurity Substances 0.000 abstract description 23
- 230000003760 hair shine Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 208000005632 oculopharyngodistal myopathy Diseases 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The present invention provides a kind of Equipment for Heating Processing.This Equipment for Heating Processing includes：Processing chamber housing, wherein having substrate processing space；Light source is placed in outside processing chamber housing with output light, and light source light shines on the substrate being loaded into processing chamber housing；And stagnate groove, it is placed in processing chamber housing above substrate and there is inner space, the light and inert gas sent out from light source passes through inner space and is directed into substrate, stagnate groove defines upwards from downside, so that inert gas is accommodated in stagnate groove and is stuck in stagnate groove.Accoding to exemplary embodiment, inert gas is accommodated in stagnate groove therein and can define in the bottom of gas injection module.Therefore, it is filled into due to the inert gas of stagnation in the space between the lower part of gas injection module and the top surface of substrate, so even if oxygen and impurity are present in outside the gas injection module in processing chamber housing, prevented also from introducing oxygen into the space between substrate and gas injection module.
Description
Technical field
The present invention relates to a kind of Equipments for Heating Processing, and more precisely, be related to it is a kind of comprising injection inert gas to prevent
Only substrate is exposed to the Equipment for Heating Processing of the gas injection module of oxygen or impurity.
Background technology
During manufacturing liquid crystal display and photovoltaic device, it is related to for making amorphous polycrystal film (for example, amorphous
Conformal polysilicon film) crystallization heat treatment process.Herein, if glass is used as substrate, amorphous polycrystal film can be with
It is crystallized by using laser.However, when amorphous polycrystal film and oxygen (O2) reaction when, amorphous polycrystal film may
It is aoxidized to generate sull.
Fig. 1 is the schematic diagram of laser thermal processing apparatus according to prior art.With reference to figure 1, laser according to prior art
Equipment for Heating Processing includes：Processing chamber housing 10, the space handled wherein with substrate 1；Transmission window 40, is placed in
To allow laser light on the top of processing chamber housing；And light source 30, placement above transmission window with outside processing chamber housing 10
Portion is to export laser 8.According to the laser thermal processing apparatus, the laser 8 exported from light source 30 can penetrate transmission window 400 simultaneously
And it is then irradiated on the substrate 1 moved horizontally.
If the top area of the substrate 1 of the irradiation of laser 8 on it is exposed to oxygen, when the top for being deposited on substrate 1
When polycrystal film 11 on portion surface crystallizes, polycrystal film may not become silicon metal, but be aoxidized.It is above-mentioned in order to solve
Limitation, 2002-93738 Japanese Patent Publication cases disclose a kind of Equipment for Heating Processing, and the Equipment for Heating Processing can swash
1 top of substrate of light irradiation on it forms atmosphere of inert gases.As illustrated in figure 2, Equipment for Heating Processing includes：Shadow shield
Part 9, the inner space passed through with laser and inert gas；Gas introduces unit 10, is connected to shadow shield part 9
Side with supplying inert gas；And light source 6,9 top of shadow shield part is placed in so that laser is output to shadow shield
In part 9.Also, substrate 1 is placed under shadow shield part 9, and gap 9a is defined in the lower end of shadow shield part 9, is swashed
Light and inert gas are discharged into across the gap on substrate 1.Therefore, it is formed in lining when the laser 8 sent out from light source 6 is irradiated to
When polycrystal film 11 on bottom 1, inert gas can be supplied in shadow shield part 9 lazy to be formed on the surface of substrate 1
Property atmosphere.
It is ejected on substrate 1 however, inerting gas through shadow shield part 9, the inert gas sprayed may also
It can be rapidly depleting across the side of shadow shield part 9 or substrate 1.Thus it can be difficult to prevent oxygen from penetrating into substrate 1 and part
In space between shielding part 9.As described above, due to the infiltration of oxygen, the film formed on the top surface of substrate 1 can
It can be aoxidized to generate defect.
[existing technical literature]
[patent document]
(patent document 1) 2002-93738 Japanese Patent Publication cases
Invention content
The present invention provides a kind of Equipment for Heating Processing, and the Equipment for Heating Processing includes gas injection module, the gas injection
Module ejects inert gas is to prevent substrate to be exposed to oxygen and impurity.
The present invention also provides a kind of Equipments for Heating Processing, wherein being ejected into the inert gas in laser irradiation to substrate thereon
It does not exhaust, but is stagnated on the substrate in outside.
According to the embodiment, Equipment for Heating Processing includes：Processing chamber housing, wherein having substrate processing space；Light source, peace
It sets outside the processing chamber housing with output light, the light source light shines on the substrate being loaded into the processing chamber housing；
And stagnate groove, it is placed in the processing chamber above substrate and there is inner space, the light sent out from light source
The inner space is passed through with inert gas and is directed into the substrate, the stagnate groove defines upwards from downside, with
So that inert gas is stored in the stagnation groove and is stagnated in the stagnation groove.
The Equipment for Heating Processing can further include transmission window, and the transmission window is placed in the processing chamber housing
To allow to be transmitted from the light of the light source output in top.
The gas injection module can include：Inert gas chamber, the inert gas chamber are placed in transmission window
Between substrate and with the inner space that light and inert gas pass through, the inert gas chamber, which has, to be located under it
The first gap in end, light and inert gas pass through first gap；And plate, the plate be placed in inert gas chamber with
Between substrate and with the second gap with the first gap area, the plate extends to be protruded outward from inert gas chamber,
And stagnate groove is the groove with the concave shape being recessed upwards from the bottom surface of the plate.
The inside that the width of each of the plate and the stagnate groove can be more than the inert gas chamber is empty
Between width.
Each of top surface of the bottom surface of the plate and the stagnate groove can have tool predetermined curvature
Shape.
Each of top surface of the bottom surface of the plate and the stagnate groove can have circular arc or arch
Shape.
The stagnate groove can have flat top surface.
Description of the drawings
Being described below for carrying out in conjunction with the accompanying drawings can be more fully understood exemplary embodiment.
Fig. 1 is the schematic diagram of laser thermal processing apparatus according to prior art.
Fig. 2 is the schematic diagram for illustrating the modified example of laser thermal processing apparatus according to prior art.
Fig. 3 is the cross-sectional view of Equipment for Heating Processing according to an exemplary embodiment.
Fig. 4 is the partial enlargement cross-sectional view of the Equipment for Heating Processing for illustrating plate according to an exemplary embodiment.
Fig. 5 is the partial enlargement cross-sectional view of the Equipment for Heating Processing for illustrating plate according to another exemplary embodiment.
Specific implementation mode
Hereinafter, specific embodiment will be described in detail by referring to the drawings.However, the present invention can use different form reality
It applies, and should not be construed as limited to embodiments described herein.In fact, thesing embodiments are provided so that the present invention will
To be thorough and complete, and it will fully convey the scope of the present invention to those skilled in the art.
Fig. 3 is the cross-sectional view of Equipment for Heating Processing according to an exemplary embodiment.Fig. 4 is according to an exemplary reality
Apply the partial enlargement cross-sectional view of the Equipment for Heating Processing for illustrating plate of example.Fig. 5 is use according to another exemplary embodiment
In the partial enlargement cross-sectional view for the Equipment for Heating Processing for illustrating plate.
Referring to figs. 3 to Fig. 4, Equipment for Heating Processing according to an exemplary embodiment includes：Processing chamber housing 100, has
The space that substrate S is handled wherein；Platform 200 is placed in processing chamber housing 100 so that substrate S to be placed on it simultaneously
And it is transferred horizontally substrate S with handling into line direction；Light source 300 is placed in outside processing chamber housing 100 with output light, for example,
Laser for handling substrate S；Transmission window is placed in a part for the upper wall of processing chamber housing 100 to allow from light source
The laser light of 300 outputs；And gas injection module 500, it is placed in substrate S and places platform 200 on it and handle
In laser irradiation to substrate S between transmission window 400 in chamber 100 will transmit through transmission window 400 and by indifferent gas
Body is ejected into substrate S.
Processing chamber housing 100 can have the transverse cross-sectional area of square cylindrical shape, but be limited to this.For example, it handles
The shape of chamber 100 is changeable with the shape corresponding to substrate S.For example, the transmission window 400 formed by quartz is placed in processing
In the upper wall of chamber 100.Transmission window 400 can be placed in a part for the upper wall of processing chamber housing sprays mould with blanketing gas
The top of block 500.Transmission window 400 with the top of blanketing gas jet module 500 or can be placed in the upper wall of processing chamber housing
In, but not limited to this.For example, transmission window 400 can be provided in the laser exported from light source 300 and be directed into gas spray
It penetrates at any position in module 500.
Processing chamber housing 100 can have sealing structure.Therefore, oxygen (O2) or impurity can reside in processing chamber housing 100
In.Herein, oxygen (O2) film 11 being formed in substrate S may be aoxidized, and impurity can have to give birth to during processing
At the powder or gaseous state processing by-product or other pollutants for having fine granulation.Impurity can be such that the quality of film 11 drops
Characteristic that is low or changing film 11 is to cause product defects.
In order to solve due to oxygen (O2) infiltration and impurity caused by limit, gas injection module 500 can blow lazy
Property gas form atmosphere of inert gases with the overlying regions of the substrate S in laser irradiation on it.Gas injection module 500 can be with
Referred to as oxygen partial bleeder module (oxygen partial degassing module, OPDM).
Gas injection module 500 includes to be placed in the main body 510 of 200 top of platform, and substrate S is placed on the platform.
Predetermined space can be defined in the region corresponding to the main body 510 between transmission window 400 and substrate S.Pass through transmission window
400 laser can be irradiated to across predetermined space in substrate S, and inert gas can also be ejected into lining across predetermined space
On the S of bottom.For ease of description, it is defined as corresponding to region and the laser of the main body 510 between transmission window 400 and substrate S
The predetermined space passed through with inert gas can be referred to as " inert gas chamber 520 ".
Equally illustrate gas injection module 500, gas injection module 500 according to an exemplary embodiment includes：It is main
Body 510；Inert gas chamber 520 passes through at least one corresponding to the main body 510 between transmission window 400 and platform 200
Point, and the inner space passed through with laser and inert gas；Inert gas supply pipe 530 is placed in main body 510
Interior and one end is connected to the inside of inert gas chamber 520 with by inert gas (such as nitrogen (N2) gas) and be supplied to it is lazy
In property gas chamber 520；And plate 540, it is connected to the lower part of inert gas chamber 520 and is placed in inert gas chamber
Between 520 and substrate S, and with the stagnate groove 540b defined upwards from its bottom surface.Herein, equally illustrate main body
510 position, main body 510 can have the following structure：Main body 510 is positioned to around the outside of inert gas chamber 520.
As described above, inert gas chamber 520 has inner space, and the inner space is defined as by corresponding to
Main body 510 between transmission window 400 and substrate S.As illustrated in Figure 3, inner space can be in vertical (that is, height) direction
It is upper to pass through main body 510 and there is preset width.Herein, inert gas chamber 520 according to an exemplary embodiment can be with
With the vertical length (or height) more than its horizontal width.The upper opening of inert gas chamber 520 can be by transmission window
400 maskings or covering.Also, it can define gap 520a in the lower part of inert gas chamber 520 and (hereinafter, be referred to as the
One gap 520a), linear laser (that is, laser beam) and inert gas can pass through the gap.Inert gas chamber 520 it is interior
It the lower part of wall can be with the shape that internal diameter is gradually reduced downwards.In more detail, as illustrated in Figure 4, inert gas chamber
520 inner lower can have the internal diameter being gradually reduced on the direction of the first gap 520a.Also, inert gas chamber
520 inner lower can have predetermined curvature or curved shape.
Although main body 510 is separated from each other, main body 510 and indifferent gas as described above with inert gas chamber 520
Fluid chamber 520 can integrate each other.
Inert gas supply pipe 530 can be the unit for being supplied to inert gas in inert gas chamber 520.Root
It can be placed in main body 510 according to the insertion feed tube 530 of an exemplary embodiment and be connected to inert gas cavity
The side of room 520.That is, inert gas supply pipe 530 can extend in main body 510.Also, inert gas supply pipe
530 end may be coupled to the side of inert gas chamber 520 and the other end and be connected to gas storage unit (not
Diagram), inert gas is stored in the gas storage unit.Inert gas supply pipe 530 can be provided as being inserted into main body
The pipe of pipe shape in 510.It is inserted into feed tube 530 and is designed such that one end thereof is connected to inert gas
The side of chamber 520 or the inside of main body 510 are connected to through handling with the side of inert gas chamber 520.Also, inertia
Feed tube 530 can have the double pipe structure that is made of outermost tubes, that is, exterior tube and be placed in inside the exterior tube
Inner tube.Herein, lazy in inert gas chamber 520 inert gas to be discharged into if being connected to inert gas chamber 520
Property feed tube 530 an end be referred to as discharge slit, then the discharge slit can be as illustrated in Figure 3 with line
Shape tilts down.Also, at least one portion in the region corresponding to the inert gas supply pipe 530 of the front end of discharge slit
There can be the channel shape of bending several times, that is, be bent several times.
Certainly, inert gas supply pipe 530 can be not limited to above-mentioned shape.For example, inert gas supply pipe 530 can
To become being enough the variously-shaped of supplying inert gas.
It is discharged from gas injection module 500 and the inert gas that is then ejected into substrate S is (for example, nitrogen (N2) gas
Body) oxygen in (more precisely, on region of substrate S in laser irradiation on it) can will be retained in above substrate S
(O2) and impurity drive away to form atmosphere of inert gases in the space between gas injection module 500 and substrate S.Herein, may be used
To provide plate 540 to allow the inert gas discharged from the first gap 520a of inert gas chamber 520 on the entire top of substrate S
Wall type disperses on portion surface.Plate 540 is just upwardly extended in the left/right (or width) of inert gas chamber and substrate S.
Hereinafter, plate according to an exemplary embodiment will be described in further detail.
As illustrated in figs. 3 and 4, plate 540 according to an exemplary embodiment, which can have, is connected to main body 510
Low portion and inert gas chamber 520 and with square shape cross section plate shape.Gap 540a is (below
In, it is referred to as the second gap 540a) it can be defined in below the first gap 520a, laser and inert gas pass through gap 540a.
In more detail, plate 540 can have and prolong from the first gap 520a being defined in two directions in inert gas chamber 520
The plate shape stretched.Plate 540 can have the length upward in left right, that is, be more than inert gas chamber 520 width and
Less than the width of the width of substrate S.
Stagnate groove 540b is defined in plate 540, and in the stagnation groove, inert gas is filled into the bottom of plate 540
In space (or gap) between surface and substrate S.The inert gas being filled into stagnate groove 540b can prevent gas from spraying
It penetrates in the oxygen outside module 500 and dopants penetration to the space between plate 540 and substrate.That is, plate 540 can have
It is defined upwards from the lower part of plate 540 to store the groove of inert gas, that is, stagnate groove 540b.Therefore, exemplary according to one
The bottom surface of the plate of embodiment can not be flat horizontal plane, but have difference in height.That is, fringe region,
That is, the outermost edge region of the bottom surface of plate 540, can be higher than in the bottom surface that left right is defined in plate 540 upwards
Fringe region inside region.Therefore, when inert gas is supplied to the downside of plate 540 from inert gas chamber 520, inertia
The flowing of gas can be stopped by the fringe region of plate 540 or masking is to prevent inert gas to be depleted in outside, and then
Inert gas can be stagnated the predetermined time.Therefore, inert gas passes through the time that the second gap 540a is exhausted in the outside of substrate S
It is likely larger than the time according to prior art.Also, if inert gas is continuously supplied, in stagnate groove 540b
Pressure can increase compared with the pressure outside gas injection module 500 more.It can prevent from being retained in by pressure difference
In oxygen and dopants penetration to the space between plate 540 and substrate S outside gas injection module 500.
The bottom surface of plate 540, that is, the top surface of stagnate groove 540b can have predetermined curvature.That is, such as
Fig. 3 and illustrated in fig. 4, plate 540 can have circular arc or bowed shape, and wherein the height of the bottom surface of plate 540 is second
Gradually increase from the edge of plate 540 on the direction of gap 540a.
As described above, plate 540 has circular arc or bowed shape, the wherein bottom surface of plate 540 or stagnate groove 540b
Top surface have predetermined curvature.However, the invention is not limited thereto.For example, as illustrated in figure 2, shown according to another
Example property embodiment, the top surface of stagnate groove 540b can be flat.That is, according to another exemplary embodiment
The spherical shape that the stagnate groove 540b of plate can be opened with lower part.That is, groove can be upward from the lower part of plate 540
It defines.Herein, groove can have flat top surface, but and without the top surface of bending.
Therefore, according to the exemplary embodiment, the inert gas across the second gap 540a discharges can push out
It is present in the oxygen and impurity of 500 lower section of gas injection module.Therefore, oxygen and impurity can be dispersed in the bottom table of plate 540
It can not be flowed on the extending direction in face and outward by the fringe region of the bottom surface of plate 540.Therefore, it is ejected into gas
Inert gas in the downside of jet module 500 can not outward be exhausted similar to the relevant technologies and, but be stuck in and be defined in
One section of predetermined time in stagnate groove 540b in the lower part of plate 540.Also, if inert gas is continuously supplied, that
Pressure in stagnate groove 540b can be higher than the pressure outside gas injection module 500.Therefore, even if oxygen and impurity are deposited
It is outside the gas injection module 500 in processing chamber housing, is also possible to prevent oxygen and impurity is introduced in substrate S and is sprayed with gas
It penetrates in the space between module 500.Therefore, because the top area of at least substrate of laser irradiation on it is not exposed to oxygen
And impurity, so the amorphous polycrystal film 11 being formed on the top surface of substrate S may be not oxidized to prevent film quilt
Impurity pollutes or changes characteristic.
Although the light that is sent out from light source 300 is irradiated in substrate S and is described as laser for handling the light of substrate S,
The invention is not limited thereto.For example, the various light for handling substrate S can be used according to the purpose of processing.
Hereinafter, it will be described by using Equipment for Heating Processing pair according to an exemplary embodiment referring to figs. 3 to Fig. 4
The method that film is crystallized.
First, amorphous polycrystal film 11 (for example, amorphous polysilicon membrane) is formed on glass substrate S.Also,
The substrate S that amorphous polysilicon membrane is formed thereon can be loaded into the processing chamber housing 10O of Equipment for Heating Processing and be pacified
It is placed on platform 200.
When substrate S is placed on platform 200, laser can be worn in substrate S handling into transferring horizontally on line direction
It is irradiated to while crossing platform 200 on the film 11 being formed in substrate S.That is, light source 300 can be operated to export
Light, that is, the laser from light source 300.Then, the laser of output can be irradiated to inert gas chamber across transmission window 400
It is irradiated on the film 11 being formed in substrate S in 520 and across the first gap 520a and the second gap 540a.Therefore, shape
It can be with laser reactive to form crystal silicon film at the amorphous polysilicon membrane in substrate S.
As described above, while by laser irradiation to substrate S, inert gas can be ejected into the upside of substrate
Or in film 11.For this purpose, when inert gas is (for example, nitrogen (N2) gas) and be supplied to across inert gas supply pipe 530 it is lazy
Property gas chamber 520 in when, nitrogen can via the first gap 520a of inert gas chamber 520 and across provide in plate 540
In the second gap 540a be injected on the substrate.Also, being discharged into the nitrogen in substrate S across the second gap 540a can
To disperse relative to the central cross of the second gap 540a.Herein, the oxygen and impurity being retained between plate 540 and substrate S can
To be pushed laterally through the hole.That is, the nitrogen across the second gap 540a discharges can disperse and be filled into be defined in plate 540
Lower part in stagnate groove 540b in.Herein, the oxygen and impurity being present between plate 540 and substrate S can pass through nitrogen
And it is pushed to the outside of gas injection module 500 and substrate S.Also, as described above, pass through the second gap 540a discharges
Nitrogen can be distributed in the space or gap between the bottom surface and substrate S of plate 540.Therefore, nitrogen gas to outflow
It is dynamic to be stopped by the fringe region of the bottom surface of plate 540.The nitrogen being ejected into the downside of plate 540 may be in plate 540
Outside is depleted, but one section of predetermined time in the stagnate groove 540b being stuck in the lower part for being defined in plate.Therefore, indifferent gas
The time that body is stuck between plate 540 and substrate S is likely larger than the time according to prior art.Also, if inert gas is
It continuously supplies, then the pressure in stagnate groove 540b may increase compared with the pressure outside gas injection module 500
More.Can by pressure difference come prevent the oxygen and impurity being present in outside gas injection module 500 be introduced in plate 540 with
In space between substrate S.
Therefore, because the substrate S and silicon thin film that are formed on the top surface of substrate S are not exposed to oxygen and impurity, institute
To be different from the prior art, substrate S and film may be not oxidized.In more detail, on it due at least laser irradiation
Substrate S or film are not exposed to oxygen and impurity, so the silicon thin film of laser irradiation on it may be not oxidized to form knot
Polycrystal silicon film.
According to the embodiment, stagnate groove can be provided in the lower part of gas injection module, and inert gas is stored simultaneously
And it stagnates in the stagnation groove.Therefore, the inert gas discharged downwards from gas injection module may not consumed in outside
To the greatest extent, but it is stuck in one section of predetermined time in stagnate groove.Therefore, because the lower part of gas injection module and the top table of substrate
Space between face is filled with the inert gas stagnated, so the internal pressure in the space between gas injection module and substrate can
The pressure of the outside of gas injection module can be more than.Therefore, even if oxygen and impurity are present in the gas injection in processing chamber housing
Module-external is also possible to prevent in the space that oxygen and impurity are introduced between substrate and gas injection module.Therefore, because
The top area of at least substrate of laser irradiation on it is not exposed to oxygen and impurity, so when the top table for being formed in substrate
When film on face crystallizes, the film may be not oxidized to prevent from defective processing occur due to impurity.
Although having referred to specific embodiment describes Equipment for Heating Processing, its is without being limited thereto.Therefore, the technology of fields
Personnel, can be with it will be readily understood that without departing from the spirit and scope of the invention as defined by the following claims
It is carry out various modifications and is changed.
Claims (7)
1. a kind of Equipment for Heating Processing, it is characterised in that including：
Processing chamber housing, wherein having substrate processing space；
Light source disposes outside the processing chamber housing with output light, and the illumination is mapped to and is loaded into the place by the light source
It manages on the substrate in chamber；And
Plate is placed on the substrate in the processing chamber housing and has stagnate groove,
The wherein described stagnate groove placement is on the substrate and with inner space, the light sent out from the light source
The inner space is passed through with inert gas and is directed into the substrate, and the stagnate groove is defined upwards from downside
, so that the inert gas is stored in the stagnation groove and is stagnated in the stagnation groove, and
The wherein described stagnate groove is the groove with the concave shape being recessed upwards from the bottom surface of the plate.
2. Equipment for Heating Processing according to claim 1 further comprises that transmission window, the transmission window are placed in institute
It states in the top of processing chamber housing to allow to be transmitted from the light of the light source output.
3. Equipment for Heating Processing according to claim 2, further comprises gas injection module, wherein the gas injection
Module includes：
Inert gas chamber, the inert gas chamber are placed between the transmission window and the substrate and with described
The inner space that light and the inert gas pass through, the inert gas chamber have the first seam being located in its lower end
Gap, the light and the inert gas pass through first gap；And
The plate is placed between the inert gas chamber and the substrate and with the with first gap area
Two gaps, the plate extend to be protruded outward from the inert gas chamber.
4. Equipment for Heating Processing according to claim 3, wherein the width of each of the plate and described stagnate groove
More than the width of the inner space of the inert gas chamber.
5. Equipment for Heating Processing according to claim 4, wherein the bottom surface of the plate and the stagnate groove
Each of top surface has the shape of tool predetermined curvature.
6. Equipment for Heating Processing according to claim 5, wherein the bottom surface of the plate and the stagnate groove
Each of top surface has circular arc or bowed shape.
7. Equipment for Heating Processing according to claim 3, wherein the stagnate groove has flat top surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130125278A KR101777761B1 (en) | 2013-10-21 | 2013-10-21 | treatment equipment |
| KR10-2013-0125278 | 2013-10-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104576448A CN104576448A (en) | 2015-04-29 |
| CN104576448B true CN104576448B (en) | 2018-10-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410563389.0A Active CN104576448B (en) | 2013-10-21 | 2014-10-21 | Equipment for Heating Processing |
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| Country | Link |
|---|---|
| KR (1) | KR101777761B1 (en) |
| CN (1) | CN104576448B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113843123B (en) * | 2021-09-27 | 2023-07-18 | 常熟五临天光电科技有限公司 | Irradiation device and system convenient for air removal |
| CN113857012B (en) * | 2021-09-27 | 2023-07-28 | 常熟五临天光电科技有限公司 | Illumination processing system convenient to air is got rid of |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4232330B2 (en) * | 2000-09-22 | 2009-03-04 | 東京エレクトロン株式会社 | Excited gas forming apparatus, processing apparatus and processing method |
| JP4947646B2 (en) * | 2007-05-23 | 2012-06-06 | 株式会社日本製鋼所 | Gas injection means for laser processing apparatus |
| JP2009099917A (en) | 2007-10-19 | 2009-05-07 | Ulvac Japan Ltd | Laser annealing apparatus |
| JP5710591B2 (en) * | 2009-04-20 | 2015-04-30 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Enhanced removal of residual fluorine radicals using a silicon coating on the process chamber walls |
| US20100310766A1 (en) * | 2009-06-07 | 2010-12-09 | Veeco Compound Semiconductor, Inc. | Roll-to-Roll Chemical Vapor Deposition System |
| KR101089625B1 (en) * | 2009-07-03 | 2011-12-06 | 에이피시스템 주식회사 | Laser annealing apparatus having oxygen partial degassing module |
-
2013
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| Publication number | Publication date |
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| KR20150046424A (en) | 2015-04-30 |
| KR101777761B1 (en) | 2017-09-13 |
| CN104576448A (en) | 2015-04-29 |
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