CN104570521A - 液晶显示器以及制造液晶显示器的方法 - Google Patents
液晶显示器以及制造液晶显示器的方法 Download PDFInfo
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Abstract
本发明涉及液晶显示器以及制造液晶显示器的方法。液晶显示器包括:基板;布置在基板上的薄膜晶体管;布置在薄膜晶体管上的像素电极;面向像素电极的顶层;形成在像素电极与顶层之间的多个微腔,每个微腔包括液晶材料;形成在微腔之间的沟槽;以及形成在沟槽的端部处的缓冲区域。
Description
技术领域
本发明涉及液晶显示器以及制造液晶显示器的方法。
背景技术
液晶显示器是广泛使用的平板显示器设备之一。液晶显示器通常包括两个显示面板,其中,形成有诸如像素电极和公共电极的场生成电极,同时液晶层介于像素电极与公共电极之间。
液晶显示器通过向场生成电极施加电压而在液晶层中产生电场以确定液晶层的液晶分子的取向并控制入射光的偏振,从而显示图像。
在背景部分中公开的上述信息仅用于增强对本发明的背景的理解,并且因此其可包括未形成在该国已为本领域普通技术人员所知的现有技术的信息。
发明内容
已经努力做出本公开以提供具有能够防止由剩余液晶材料而导致的光泄漏的优点的液晶显示器以及液晶显示器的制造方法。
实施方式提供了一种液晶显示器,其包括:基板;布置在基板上的薄膜晶体管;布置在薄膜晶体管上的像素电极;面向像素电极的顶层;形成在像素电极与顶层之间的多个微腔,多个微腔的每个微腔包括液晶材料;形成在微腔之间的沟槽;以及形成在沟槽的端部处的缓冲区域。
沟槽可具有第一宽度,缓冲区域可具有第二宽度,并且第二宽度可大于第一宽度。
缓冲区域可利用顶层覆盖。
在缓冲区域中可包括至少部分液晶材料。
气孔形成在位于缓冲区域上方的顶层处。
液晶显示器可进一步包括设置在顶层上方的封顶层(capping layer),并且封顶层可覆盖沟槽和气孔。
缓冲区域可包括沿显示区的一侧形成的多个缓冲区域,并且每个缓冲区域可彼此分开地形成。
缓冲区域之间的间隙可利用顶层来覆盖。
液晶显示器可进一步包括设置在每个微腔与顶层之间的下部绝缘层和公共电极,并且下部绝缘层设置在公共电极上。
薄膜晶体管可连接至数据线,并且间隔壁形成部分可沿数据线的延伸方向设置在微腔之间。
另一个实施方式提供了一种液晶显示器的制造方法,其包括:在基板上形成薄膜晶体管;形成被配置为连接至薄膜晶体管的一个端子的像素电极;在像素电极上形成牺牲层;在牺牲层上形成顶层;通过去除牺牲层形成缓冲区域和具有液晶注入孔的多个微腔;将取向材料注入多个微腔;以及将液晶材料注入多个微腔,其中,在各个微腔之间形成沟槽,并且在沟槽的端部处形成缓冲区域。
沟槽的第一宽度可比缓冲区域的第二宽度宽。
顶层可形成为覆盖缓冲区域。
注入液晶材料可包括通过使用缓冲区域使液晶材料沿沟槽滴下。
在缓冲区域中可包括至少部分液晶材料。
形成顶层可包括在顶层的与缓冲区域的一部分对应的部分处形成气孔。
制造方法可进一步包括在顶层上方形成封顶层,并且封顶层形成为覆盖沟槽和气孔。
缓冲区域可包括沿显示区的一侧形成的多个缓冲区域,并且各个缓冲区域可彼此分开地形成。
所形成的各个缓冲区域可具有介于其间的利用顶层来覆盖的间隙。
制造方法可进一步包括在微腔与顶层之间形成下部绝缘层和公共电极,并且下部绝缘层可形成在公共电极上。
在本文所公开的实施方式中,可以通过形成其中可在形成在多个微腔之间的沟槽的边缘处收集剩余液晶材料的缓冲空间来防止由剩余液晶材料导致的光泄漏。
附图说明
图1是示出根据实施方式的液晶显示器的顶部平面图。
图2是部分示出图1中所示的多个像素的中心部分的顶部平面图。
图3是沿图2中所示的线III-III所截取的横截面图。
图4是沿图2中所示的线IV-IV所截取的横截面图。
图5是沿图1中所示的线V-V所截取的横截面图。
图6是沿图1中所示的线VI-VI所截取的横截面图。
图7是沿图1中所示的线VII-VII所截取的横截面图。
图8是沿图1中所示的线VIII-VIII所截取的横截面图。
图9是示出在实施方式的液晶显示器中的相邻缓冲空间的横截面图。
图10A至图16C是示出根据实施方式的液晶显示器的制造方法的分步横截面图。
具体实施方式
在下文中,将参照附图详细描述某些实施方式。如本领域技术人员将认识到的,在不背离本发明的精神或范围的前提下,所描述的实施方式可以各种方式进行修改。相反,提供本文中所介绍的实施方式以使得所公开的内容是全面和完整的,并向本领域的技术人员充分传达本发明的精神。
在附图中,为了清晰起见,可夸大层、膜、面板、区域等的厚度。将理解,当层被称为“在”另一个层或基板“上”时,其可直接在其他层或基板上,或者也可存在中间元件。相似的参考编号通常表示遍及说明书的相似元件。
已经针对液晶显示器开发了在像素单元中形成腔并利用液晶填充腔以实现显示的技术。该技术用于通过以下操作制造显示器:利用有机材料形成牺牲层、在牺牲层的上部分处形成顶层、去除牺牲层、并通过液晶注入孔利用液晶来填充通过去除牺牲层而形成的空的空间,而不是在下部面板上形成上部面板。
在制造这种显示器设备的操作中,某些液晶材料在被注入腔中之后可能剩余。这些剩余的液晶材料可能存在于顶层上,从而当驱动显示器设备时产生光泄漏。
图1是示出根据实施方式的液晶显示器的顶部平面图。图2是部分地示出图1中所示的多个像素的中心部分的顶部平面图。图3是沿图2中所示的线III-III所截取的横截面图。图4是沿图2中所示的线IV-IV所截取的横截面图。图5是沿图1中所示的线V-V所截取的横截面图。图6是沿图1中所示的线VI-VI所截取的横截面图。图7是沿图1中所示的线VII-VII所截取的横截面图。图8是沿图1中所示的线VIII-VIII所截取的横截面图。图9是示出在实施方式的液晶显示器中的相邻缓冲空间的横截面图。
参照图1,液晶显示器包括显示区DA和外围区PA。显示区DA与通过虚线表示的四边形的内部部分对应,并且外围区PA与通过虚线表示的四边形的外部部分对应。显示区DA充当用于输出实际图像的区域,并且外围区PA包括焊盘(pad)单元600或驱动器。例如,在焊盘单元600中,焊盘可设置在外围区域PA的一侧或其彼此不相对的两侧处。
多个像素PX设置在显示区DA中,并且用于覆盖其中可能发生光泄漏的部分的遮光层221设置在外围区PA中。像素PX形成有微腔,这在下面描述。遮光层221可以环绕显示区DA的方式形成在显示区DA的外圆,以便包围显示区DA。遮光层221可由与设置在显示区DA中的遮光构件的层相同的层以及与外围区PA中的遮光构件的材料相同的材料形成。遮光层221可用于防止外部光的可视反射。
在一个实施方式中,沟槽307FP形成在像素PX的行或者像素PX中形成的微腔之间。沟槽307FP可沿着附图中的水平方向纵向延伸。沟槽307FP包括形成在像素PX之间的多个沟槽。具有比沟槽307FP的第一宽度d1宽的第二宽度d2的缓冲区域315形成在沟槽307FP的相对端部处。具体地,缓冲区域315形成在每个沟槽307FP的相对端部处,以便彼此相邻地水平排布。相邻的缓冲区域315彼此分开。可替代地,尽管未示出,缓冲区域315可形成在每个沟槽307FP的一个端部处。
缓冲区域315可形成在显示区DA或外围区PA的边缘处。
现将参照图2至图4详细地描述位于显示区DA中的像素PX。图2示出了4(2×2)个像素作为图1中所示的像素的部分TP。
参照图2至图4,在由透明玻璃或塑料制成的基板110上形成栅极线121和存储电极线131。栅极线121包括栅电极124。存储电极线131主要在水平方向上延伸,并传输预定电压,诸如公共电压Vcom。存储电极线131包括基本上垂直于栅极线121延伸地一对垂直存储电极部分135a以及将该对垂直存储电极部分135a的端部彼此连接的水平存储电极部分135b。存储电极部分135a和135b具有围绕像素电极191的结构。
在栅极线121和存储电极线131上形成栅极绝缘层140。在栅极绝缘层140上形成布置在数据线171下方的半导体层151以及布置在源/漏电极下方和薄膜晶体管Q的沟道部分处的半导体层154。
在半导体层151和154的每一个上以及数据线171与源极/漏电极之间可形成有多个欧姆触点,但在附图中将它们省略。
在半导体层151和154以及栅极绝缘层140的每一个上形成包括源电极173、与源电极173连接的数据线171以及漏电极175的数据导体171、173和175。
栅电极124、源电极173和漏电极175与半导体层154一起形成薄膜晶体管Q,并且薄膜晶体管Q的沟道形成在源电极173与漏电极175之间的半导体层154的一部分上。
在数据导体171、173和175以及半导体层154的暴露部分上形成第一层间绝缘层180a。第一层间绝缘层180a可包括无机绝缘材料(诸如,例如氮化硅(SiNx)和氧化硅(SiOx))或有机绝缘材料。
在第一层间绝缘层180a上形成滤色器230以及遮光构件220a和220b。
遮光构件220a和220b的每一个具有格状(lattice)结构(其具有与显示图像的区域对应的开口)并由防止光通过其传播的材料形成。滤色器230形成在遮光构件220a和220b的开口处。遮光构件220a和220b包括沿平行于栅极线121的方向形成的水平遮光构件220a以及沿平行于数据线171的方向形成的垂直遮光构件220b。
滤色器230可显示基色(诸如,例如包括红、绿和蓝的三基色)的其中一种。然而,颜色并不限于包括红、绿和蓝的三基色,并且滤色器230也可显示基于蓝绿色的颜色、基于品红色的颜色、基于黄色的颜色以及基于白色的颜色之中的其中一种。滤色器230可由针对每个相邻像素显示不同颜色的材料形成。
在滤色器230以及遮光构件220a和220b上形成覆盖滤色器230以及遮光构件220a和220b的第二层间绝缘层180b。第二层间绝缘层180b可包括无机绝缘材料(诸如,例如氮化硅(SiNx)和氧化硅(SiOx))或者有机绝缘材料。
如果由于滤色器230与遮光构件220a和220b之间的厚度差而产生阶梯(step),则第二层间绝缘层180b包括有机绝缘材料,从而可以减少或去除所产生的阶梯。
滤色器230、遮光构件220a和220b以及层间绝缘层180a和180b具有暴露漏电极175的接触孔185。
像素电极191布置在第二层间绝缘层180b上。像素电极191可由透明导电材料(诸如ITO或IZO)形成。
像素电极191的整体形状是四边形,并且像素电极191包括由水平主干191a和与水平主干191a交叉的垂直主干191b配置的十字主干。此外,像素电极191被水平主干191a和垂直主干191b分为四个子区域,并且每个子区域包括多个微小分支191c。在一个实施方式中,像素电极191可进一步包括围绕像素电极191的外周的外部主干。
像素电极191的微小分支191c与栅极线121或水平主干191a形成近似40°-45°的角。此外,两个相邻的子区域的微小分支可彼此垂直。此外,微小分支的宽度逐渐增大,或者微小分支191c之间的距离可改变。
像素电极191包括在垂直主干191b的下端部处连接并具有比垂直主干191b更大的面积的延伸部197,并通过在延伸部197处的接触孔185与漏电极175物理地并电气地连接以接收来自数据电极175的数据电压。
上述薄膜晶体管Q和像素电极191仅作为实例进行描述,并且可修改薄膜晶体管的结构和像素电极的设计以改善侧面可视性。
下部取向层11形成在像素电极191上,并且可以是垂直取向层。下部取向层11(其类似于由诸如例如聚酰胺酸、聚硅氧烷、聚酰亚胺等的材料制成的液晶取向层)可包括至少一种通常使用的材料。
上部取向层21布置在面向下部取向层11的部分处,并且在下部取向层11与上部取向层21之间形成微腔305。包括液晶分子310的液晶材料通过液晶注入孔307注入到微腔305中。微腔305可沿像素电极191的列方向(即,垂直方向)形成。在一个实施方式中,形成取向层11和21的取向材料以及包括液晶分子310的液晶材料可通过使用毛细力(capillaryforce)注入到微腔305中。
微腔305在垂直方向上通过布置在与栅极线121重叠的部分处的多个沟槽307FP来划分,并且可沿栅极线121延伸的方向形成多个微腔305。所形成的多个微腔305的每一个可与像素区对应,并且像素区可与显示图像的区域对应。
公共电极270和下部绝缘层350布置在上部取向层21上。公共电极270接收公共电压,并且与被施加数据电压的像素电极191一起产生电场,以确定布置在两个电极之间的微腔305处的液晶分子310倾斜的方向。公共电极270与像素电极191形成电容器以便即使在薄膜晶体管断开之后也可保持所接收的电压。下部绝缘层350例如可由氮化硅(SiNx)或氧化硅(SiOx)形成。
在一个实施方式中,描述了公共电极270形成在微腔305上,但在另一个实施方式中,公共电极270可形成在微腔305下方,从而根据共面电极(CE)模式的液晶驱动是可行的。
顶层360布置在下部绝缘层350上。顶层360用于进行支撑,从而形成作为像素电极191与公共电极270之间的空间的微腔305。顶层360可包括光阻剂或其他有机材料。
上部绝缘层370布置在顶层360上。可使上部绝缘层370与顶层360的上表面接触。上部绝缘层370例如可由氮化硅(SiNx)或氧化硅(SiOx)形成。
在一个实施方式中,封顶层390填充沟槽307FP并覆盖被沟槽307FP暴露的微腔305的液晶注入孔307。封顶层390包括有机材料或无机材料。
在一个实施方式中,如图4所示,间隔壁形成部分PWP布置于在水平方向彼此相邻的微腔305之间。间隔壁形成部分PWP可沿数据线171的延伸方向形成,并且可由顶层360覆盖。下部绝缘层350、公共电极270、上部绝缘层370和顶层360填充在间隔壁形成部分PWP中,并且该结构形成间隔壁以分割或限定微腔305。在一个实施方式中,由于诸如间隔壁形成部分PWP的间隔壁结构存在于微腔305之间,因此即使绝缘基板110弯曲,所产生的应力也很小,并且可大大降低单元(cell)间隙的变化程度。
在下文中,将参照图1、图5、图6、图7、图8和图9详细地描述显示区DA的边缘或设置在外围区PA中的缓冲区域315。
参照图1、图5、图6、图7、图8和图9,缓冲区域315位于与位于显示区DA的最外层区域的像素PX相邻。缓冲区域315由顶层360覆盖。下部绝缘层350可位于缓冲区域315的顶层360下方,并且上部绝缘层370可位于缓冲区域315的顶层360上方。封顶层390可位于上部绝缘层370上。
剩余液晶材料310R(其包括剩余液晶分子)包括在缓冲区域315中。剩余液晶材料310R可以是在填充微腔305之后剩余的液晶材料。
参照图5、图6和图8,形成穿过位于缓冲区域315上方的下部绝缘层350、顶层360和上部绝缘层370延伸的气孔330。
在液晶显示器的制造过程的实施方式中,在缓冲区域315处收集剩余的液晶材料310R,同时空气被排出至缓冲区域315外部。气孔330用于防止所收集的剩余液晶材料溢出缓冲区域315并在顶层360上流动。
沿着显示区DA的边缘或外围区PA的一侧形成缓冲区域315,并且相邻的缓冲区域315彼此分开地定位。图9是通过利用用于图7的切割线切割相邻的缓冲区域315所获得的横截面图。如图9所示,相邻的缓冲区域315通过第一距离“t”彼此分开。可最小化用于这种分开布置的相邻缓冲区域315之间的距离,只要每个缓冲区域315具有最小裕度(margin)即可。缓冲区域315的第二宽度d2可通过最小化第一距离t来最大化,并且随着缓冲区域315的第二宽度d2增加,下述包括剩余液晶分子的剩余液晶材料310R可被轻易引入缓冲区域315中。
位于缓冲区域315上方的顶层360可延伸以填充缓冲区域315之间的间隙。
如果相邻缓冲区域315彼此连接,则任意一个缓冲区域315可引入更多的剩余液晶材料。因此,某些缓冲区域315可能过量填充有剩余液晶材料,而某些缓冲区域315可能未填充有液晶材料。因此,优选的是独立形成缓冲区域315。
尽管未示出,但可不同地形成相邻缓冲区域315的第二宽度d2。
根据一个实施方式,由于在缓冲区域315中收集剩余液晶材料,因此可以防止可能由于剩余液晶材料在顶层360上流动而引起的光泄漏。
在下文中,将参照图10A至图16C来描述实施方式中的液晶显示器的制造方法。可以其他形式修改和实施下述实施方式。
图10A至图16C是示出根据实施方式的液晶显示器的制造方法的分步横截面图和顶部平面图。图10A、图12A、图13A、图14A、图15A和图16A示出了沿图2的线III-III所截取的分步横截面图。图10B、图12B、图13B、图15B和图16B示出了沿图2的线IV-IV所截取的分步横截面图。图10C、图12C、图13C、图15C和图16C示出了沿图1的线VII-VII所截取的分步横截面图。图12D、图13D、图14D和图15D示出了沿图1的线VIII-VIII所截取的分步横截面图。图11是示出用于形成牺牲层的步骤的顶部平面图。
参照图2、图10A和图10B,为了在基板110上形成开关元件,形成沿水平方向延伸的栅极线121,在栅极线121上形成栅极绝缘层140,在栅极绝缘层140上形成半导体层151和154,并且形成源电极173和漏电极175。与源电极175连接的数据线171可形成为与栅极线121交叉并沿垂直方向延伸。
在包括源电极173、漏电极175和数据线171的数据导体171、173和175以及半导体层154的暴露部分上形成第一层间绝缘层180a。
在第一层间绝缘层180a上的与像素区对应的位置处形成滤色器230,并且在滤色器230之间形成遮光构件220a和220b。当形成遮光构件220a和220b时,遮光层221也可与它们一起形成。
第二层间绝缘层180b形成为覆盖滤色器230以及遮光构件220a和220b,并且第二层间绝缘层180b形成为具有接触孔185,接触孔185电气地且物理地连接像素电极191和漏电极175。
此后,在第二层间绝缘层180b上形成像素电极191,并在像素电极191上形成牺牲层300。如图10B所示,在牺牲层300中沿着平行于数据线171的方向形成开口部分OPN。在后续过程中,公共电极270、下部绝缘层350、顶层360和上部绝缘层370填充在开口部分OPN中以形成间隔壁形成部分PWP。
参照图10C和图11,在将形成缓冲区域315的缓冲区域保留区域315R中形成牺牲层300。牺牲层300可由有机材料形成。缓冲区域保留区域315R的第二宽度d2可形成为相比其上将形成沟槽307FP的沟槽保留区域307FPR的第一宽度d1更宽。
参照图12A至图12D,在牺牲层300上顺序地形成公共电极270、下部绝缘层350和顶层360。在与水平遮光构件220a(其布置于在垂直方向相邻的像素区域之间)对应的区域中可通过曝光和显影处理去除顶层360。顶层360在与水平遮光构件220a对应的区域中暴露下部绝缘层350。如图12B所示,公共电极270、下部绝缘层350和顶层360填充形成在垂直遮光构件220b上方的开口部分OPN,从而形成间隔壁形成部分(PWP)。
如图12C所示,下部绝缘层350和顶层360可以覆盖设置在缓冲区域保留区域315R(其形成为具有第二宽度d2)中的牺牲层300的方式形成。位于相邻缓冲区域保留区域315R之间的牺牲层300之间的空间可利用顶层360覆盖。
如图12D所示,在气孔保留区域330R(其上将形成气孔330)处可去除顶层360。位于牺牲层300上的下部绝缘层350暴露到外部。
参照图13A至图13D,上部绝缘层370以覆盖顶层360的上部部分和所暴露的下部绝缘层350的方式形成。
参照图14A和图14B,对上部绝缘层370、下部绝缘层350和公共电极270进行干蚀刻以部分地去除上部绝缘层370、下部绝缘层350和公共电极270,从而形成沟槽307FP和气孔330。牺牲层300暴露到外部。
参照图15A至图15D,通过氧气(O2)灰化处理或湿蚀刻方法经由沟槽307FP和气孔330来去除牺牲层300。在显示区DA中形成具有液晶注入孔307的微腔305,并且在显示区DA的边缘或外围区PA中形成缓冲区域315。根据牺牲层300的去除,微腔305处于空的空间的状态下。
参照图16A至图16C,通过经由显示区DA中的液晶注入孔307注入取向材料来在像素电极191和公共电极270上形成取向层11和21。在经由液晶注入孔307注入包括固体和溶剂的取向材料之后执行烘烤(bake)处理。
接着,包括液晶分子310的液晶材料可通过使用喷墨法等沿沟槽307FP滴下。沿沟槽307FP滴下的液晶材料可经由液晶注入孔307通过毛细力注入微腔305中。液晶材料可通过使用缓冲区域315作为起始点来滴下。
此后,在上部绝缘层370上形成封顶层390以覆盖液晶注入孔307和沟槽307FP以形成图3至图9中所示的液晶显示器。
尽管已经结合某些实施方式了描述本发明,但应理解,本发明并不限于所公开的实施方式,而是相反,本发明旨在覆盖包括在所附权利要求的精神和范围内的各种修改和等效配置。
Claims (20)
1.一种液晶显示器,包括:
基板;
薄膜晶体管,布置在所述基板上;
像素电极,布置在所述薄膜晶体管上;
顶层,面向所述像素电极;
多个微腔,形成在所述像素电极与所述顶层之间,所述多个微腔的每个微腔均包括液晶材料;
沟槽,形成在所述微腔之间;以及
缓冲区域,形成在所述沟槽的端部处。
2.根据权利要求1所述的液晶显示器,其中,所述沟槽具有第一宽度,所述缓冲区域具有第二宽度,并且所述第二宽度大于所述第一宽度。
3.根据权利要求2所述的液晶显示器,其中,所述缓冲区域利用所述顶层来覆盖。
4.根据权利要求3所述的液晶显示器,其中,在所述缓冲区域中包括至少部分液晶材料。
5.根据权利要求4所述的液晶显示器,其中,气孔形成在位于所述缓冲区域上方的所述顶层处。
6.根据权利要求5所述的液晶显示器,进一步包括设置在所述顶层上方的封顶层,其中,所述封顶层覆盖所述沟槽和所述气孔。
7.根据权利要求4所述的液晶显示器,其中,所述缓冲区域包括沿显示区的一侧形成的多个缓冲区域,并且每个所述缓冲区域彼此分开地形成。
8.根据权利要求7所述的液晶显示器,其中,所述多个缓冲区域之间的间隙利用所述顶层来覆盖。
9.根据权利要求3所述的液晶显示器,进一步包括设置在每个微腔与所述顶层之间的下部绝缘层和公共电极,
其中,所述下部绝缘层设置在所述公共电极上。
10.根据权利要求9所述的液晶显示器,其中,所述薄膜晶体管连接至数据线,并且间隔壁形成部分沿所述数据线的延伸方向设置在所述微腔之间。
11.一种液晶显示器的制造方法,所述方法包括:
在基板上形成薄膜晶体管;
形成连接至所述薄膜晶体管的一个端子的像素电极;
在所述像素电极上形成牺牲层;
在所述牺牲层上形成顶层;
通过去除所述牺牲层形成缓冲区域和具有液晶注入孔的多个微腔;
将取向材料注入所述多个微腔;以及
将液晶材料注入所述多个微腔,
其中,在各个微腔之间形成沟槽,并且所述缓冲区域形成在所述沟槽的端部处。
12.根据权利要求11所述的制造方法,其中,所述沟槽的第一宽度比所述缓冲区域的第二宽度宽。
13.根据权利要求12所述的制造方法,其中,所述顶层形成为覆盖所述缓冲区域。
14.根据权利要求13所述的制造方法,其中,注入所述液晶材料包括通过使用所述缓冲区域使液晶材料沿所述沟槽滴下。
15.根据权利要求14所述的制造方法,其中,在所述缓冲区域中包括至少部分液晶材料。
16.根据权利要求13所述的制造方法,其中,形成所述顶层包括在所述顶层的与所述缓冲区域的一部分对应的部分处形成气孔。
17.根据权利要求16所述的制造方法,进一步包括:
在所述顶层上方形成封顶层,
其中,所述封顶层形成为覆盖所述沟槽和所述气孔。
18.根据权利要求17所述的制造方法,其中,所述缓冲区域包括沿着显示区的一侧形成的多个缓冲区域,并且各个缓冲区域彼此分开地形成。
19.根据权利要求18所述的制造方法,其中,所形成的各个缓冲区域具有介于其间的利用所述顶层来覆盖的间隙。
20.根据权利要求19所述的制造方法,进一步包括:
在所述微腔与所述顶层之间形成下部绝缘层和公共电极,
其中,在公共电极上形成所述下部绝缘层。
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CN108646484A (zh) * | 2018-05-04 | 2018-10-12 | 昆山国显光电有限公司 | 显示面板及显示装置 |
CN114236930A (zh) * | 2022-02-18 | 2022-03-25 | 成都中电熊猫显示科技有限公司 | 阵列基板以及显示装置 |
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CN104808396A (zh) * | 2015-05-13 | 2015-07-29 | 京东方科技集团股份有限公司 | 一种液晶盒及其制备方法、显示装置 |
KR20170012705A (ko) * | 2015-07-22 | 2017-02-03 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR20170083178A (ko) | 2016-01-07 | 2017-07-18 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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