CN104569014A - Method and device for testing secondary electron emission coefficient of material under all incidence angles - Google Patents
Method and device for testing secondary electron emission coefficient of material under all incidence angles Download PDFInfo
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Abstract
The invention provides a method and a device for testing a secondary electron emission coefficient of a material under all incidence angles. The method comprises the following steps: step 1, arranging a to-be-tested sample onto a sample table in a vacuum cavity, vacuumizing the cavity, and arranging an electron collection device which is adopted as a collection part and is a quarter of a spherical shell in an upper half space; step 2, rotating the sample table, enabling the to-be-tested sample to incline for a needed test angle theta, testing current flowing by the electron collection device and marking as I1; step 3, rotating the sample table, enabling the to-be-tested sample to incline in an opposite direction for an angle theta, testing the current, and marking the current as I2; step 4, maintaining the to-be-tested sample stationary, rotating the electron collection device to the lower half space, testing the current, and marking the current as I3; step 5, testing incidence electron current, and marking the incidence electron current as Ip, and obtaining the secondary electron emission coefficient delta as (in the specification) under incident angle theta. According to the method and the device, all emitted electrons can be collected by changing the sample angle and the angle of the collection device. The method and the device have the advantages of precision in test result and simplicity in operation.
Description
Technical field
The invention belongs to Physical Electronics field, particularly a kind of method and apparatus testing material secondary electron emission coefficiency under full incident angle.
Background technology
The secondary electron emission characteristic of material is not only the important parameter characterizing spacecraft HIGH-POWERED MICROWAVES parts micro discharge, is also the important evidence of the selection of spacecraft HIGH-POWERED MICROWAVES parts, design and study.The test of secondary electron emission characteristic for the Physical Mechanism of research secondary, accurately predicting micro-discharge threshold and optimize micro discharge suppressing method tool significance.Under different incidence angles degree, the test of secondary electron emission characteristic contributes to predicting micro-discharge threshold and assessment micro discharge suppressing method accurately, and this is for the shortening microwave component design cycle, reduces micro discharge experimental period and save every expenditure to have remarkable result.Meanwhile, the secondary electron emission characteristic of metal material also has important impact to the performance of vacuum electron device.On the one hand, the central principle of all kinds of electron multiplier, scanning electron microscope, Auger electron spectrometer and other various electron surface analytical instrument is all the secondary process that make use of material.On the other hand, multipactor discharge process is then impact all kinds of high-power microwave vacuum device, nuclear fusion and the key factor in accelerator reliability and life-span.The secondary electron emission characteristic of Measurement accuracy metal material improves all important in inhibitings to the design of all kinds of vacuum electron device, assessment and performance.
But still there is some problems in the test at present for the secondary electron yield under different incidence angles degree.
The secondary electron yield of existing calibration tape angle has following several method: 1) adopt global-type collector to collect secondary electron, the secondary electron scope that this method is collected is wide, test result is accurate, but need to open a whole set of vacuum cavity during each test, this is operating difficulties not only, and the vitals in cavity often can be made cruelly to leak air, cause component life to shorten; 2) semisphere or box-like collector is adopted.This method is when electron impact angle is larger, and a part of secondary electron cannot be collected; 3) changing sample angle, testing sample current by applying bias voltage to sample.The method is when testing large angle incidence, and the bias voltage that sample applies can have an impact to test result.
Summary of the invention
The technical problem to be solved in the present invention is: the method for testing providing a kind of new secondary electron yield, there is test result accurate, the advantage that operation is simple, to overcome global-type collector operating difficulties in prior art, dome-type collector part electronics cannot be collected, and applies bias voltage method to problems such as test result have an impact.
Technical scheme of the present invention is: a kind of method of testing material secondary electron emission coefficiency under full incident angle, comprising:
Step 1, puts into the sample stage of vacuum cavity by testing sample, and cavity is evacuated to the vacuum tightness can opening electron gun, and collection unit is divided into the electron collection device of 1/4th spherical shells to be positioned at upper half-space;
Step 2, specimen rotating holder, makes testing sample tilt to need test angle θ along first direction, opens electron gun, and the electric current that test electron collection device flows through, is designated as I
1;
Step 3, specimen rotating holder, makes testing sample tilt to need test angle θ along the second direction contrary with first direction, opens electron gun, and the electric current that test electron collection device flows through, is designated as I
2;
Step 4, keeps testing sample motionless, rotates electron collection device to the lower half-space, open electron gun, and the electric current that test electron collection device flows through, is designated as I
3;
Step 5, test incident electron electric current, is designated as I
p; Show that the secondary electron yield δ under incident angle θ is:
Further, test by Pi Anbiao the electric current that electron collection device flows through in step 2, step 3, step 4.
Further, in step 5, flow through the electric current of testing sample by testing sample being applied the test of large bias voltage or test incident electron electric current by Faraday cup.
According to a further aspect in the invention, provide a kind of device testing material secondary electron emission coefficiency under full incident angle, apply above-mentioned method, comprising:
Be arranged on the sample stage in vacuum cavity, for placing testing sample, can rotate from first direction or second direction and treating measuring angle to testing sample; Electron collection device, collection unit is divided into 1/4th spherical shells, and electron collection device can rotate to the upper half-space of sample stage or the lower half-space relative to sample stage; Electron gun, for the testing sample electron emission on sample stage.
Further, also comprise, Pi Anbiao, for testing the electric current that electron collection device flows through.
The present invention's advantage is compared with prior art:
The electronics of all outgoing, by changing sample angle and gathering-device angle, all can be collected, and coordinate fast sample room once to test multi-disc by the present invention, and multi-disc test can complete in half a day, has test result accurate, the advantage that operation is simple.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of the position relationship of electron collection device and testing sample in step 2 in method of the present invention;
Fig. 2 shows the schematic diagram of the position relationship of electron collection device and testing sample in step 3 in method of the present invention;
Fig. 3 shows the schematic diagram of the position relationship of electron collection device and testing sample in step 4 in method of the present invention.
Embodiment
The present invention proposes a kind of method of testing material secondary electron emission coefficiency under full incident angle, and devise the novel test device of application the method.This method solve global-type collector and transmit the difficulty of sample and the low problem of testing efficiency.Global-type test once needs to open whole vacuum cavity, and completing each test needs 2-3 days, and the present invention coordinates fast sample room once to test multi-disc, and multi-disc test can complete in half a day.Meanwhile, the invention solves the inaccurate problem of dome-type collector test large-angle secondary electron emission coefficiency, when testing large-angle secondary electron emission coefficiency, dome-type collector cannot rotate due to collector, causes a part of electronics to leak out.And the present invention is by changing sample angle and gathering-device angle, the electronics of all outgoing all can be collected.It is accurate that method of the present invention has test result, the advantage that operation is simple.
Method provided by the invention, comprises following step:
(1) testing sample is put on the sample stage of vacuum cavity, and cavity is evacuated down to the vacuum tightness can opening electron gun;
(2) by four-dimensional specimen holder specimen rotating holder, make testing sample by horizontal tilt to the angle θ needing test, the position relationship of electron collection device and testing sample as shown in Figure 1; Now, open electron gun, tested the electric current that electron collection device flows through by Pi Anbiao, be designated as I
1;
(3) by four-dimensional specimen holder specimen rotating holder, testing sample and horizontal level is made still to become to treat measuring angle θ, but sense of rotation is contrary, collection unit is divided into the electron collection device of 1/4th spherical shells to keep motionless, and the position relationship of electron collection device and testing sample as shown in Figure 2; Now, open electron gun, tested the electric current that electron collection device flows through by Pi Anbiao, be designated as I
2;
(4) keep testing sample motionless, electron collection device be rotated down to the lower half-space, the position relationship of electron collection device and testing sample as shown in Figure 3; Now, open electron gun, tested the electric current that electron collection device flows through by Pi Anbiao, be designated as I
3;
(5) flow through the electric current of testing sample by testing sample being applied the test of large bias voltage or all can test incident electron electric current by Faraday cup, being designated as I
p;
Secondary electron yield δ then under incident angle θ is:
Referring to accompanying drawing in detail principle of work of the present invention is described in detail:
Shown in Figure 1, electronics incides testing sample surface with θ angle, the region of electron exit is poincare half plane (i.e. A1, A2, A3 and A4 of testing sample, electronics motion in the material only has several microns, therefore electronics can not get to the back side), the electronics of A1 part will be collected in the position that electron collection device is put.
Shown in Figure 2, testing sample is rotated θ angle in the opposite direction, and electronics still incides testing sample surface with former direction, and the region of electron exit is the poincare half plane of testing sample.Due to the symmetry of electronics and solid effect angle, as long as the angle of incident beam and sample surfaces is determined, no matter electronics is incident with which direction, and the number of electrons of outgoing is equal.Therefore, each region outgoing electron number in Fig. 1 with Fig. 2 is only relevant with relative incident angle, i.e. A1, A2, A3 in Fig. 2 and A1, A2, A3 and the A4 in A4 and Fig. 1, and the corresponding respectively outgoing electron number in these two groups of regions is consistent.Now, the electronics of A2 and the A3 part being equivalent to Fig. 1 will be collected in the position that electron collection device is put.
Shown in Figure 3, change the position of gathering-device, now, electron collection device collects the electronics of the A4 part being equivalent to Fig. 1.Being added up by the electron number that Fig. 1, Fig. 2, Fig. 3 tri-electron collection device obtain above is exactly the summation that A1, A2, A3 and A4 tetra-regional Electronic launch number, the namely secondary electron electric current of whole material, more just obtain secondary electron yield divided by incident electron electric current.
Claims (5)
1. test a method for material secondary electron emission coefficiency under full incident angle, it is characterized in that, comprising:
Step 1, puts into the sample stage of vacuum cavity by testing sample, and cavity is evacuated to the vacuum tightness can opening electron gun, and collection unit is divided into the electron collection device of 1/4th spherical shells to be positioned at upper half-space;
Step 2, specimen rotating holder, makes described testing sample tilt to need test angle θ along first direction, opens electron gun, test the electric current that described electron collection device flows through, be designated as I
1;
Step 3, specimen rotating holder, makes described testing sample need test angle θ along second direction opposite to the first direction inclination is described, opens electron gun, test the electric current that described electron collection device flows through, be designated as I
2;
Step 4, keeps testing sample motionless, rotates described electron collection device to the lower half-space, open electron gun, test the electric current that described electron collection device flows through, be designated as I
3;
Step 5, test incident electron electric current, is designated as I
p; Show that the secondary electron yield δ under incident angle θ is:
2. the method for material secondary electron emission coefficiency under the full incident angle of test according to claim 1, be is characterized in that, tested the electric current that described electron collection device flows through in described step 2, step 3, step 4 by Pi Anbiao.
3. the method for material secondary electron emission coefficiency under the full incident angle of test according to claim 1, it is characterized in that, in described step 5, flow through the electric current of testing sample by testing sample being applied the test of large bias voltage or test incident electron electric current by Faraday cup.
4. test a device for material secondary electron emission coefficiency under full incident angle, it is characterized in that, the method for any one during application rights requires 1 to 3, comprising:
Be arranged on the sample stage in vacuum cavity, for placing testing sample, can rotate from first direction or second direction and treating measuring angle to described testing sample;
Electron collection device, collection unit is divided into 1/4th spherical shells, and described electron collection device can rotate upper half-space or the lower half-space of extremely described sample stage relative to described sample stage;
Electron gun, for the described testing sample electron emission on described sample stage.
5. the device of material secondary electron emission coefficiency under the full incident angle of test according to claim 4, is characterized in that, also comprise, Pi Anbiao, for testing the electric current that described electron collection device flows through.
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Cited By (3)
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| CN109100380A (en) * | 2018-08-23 | 2018-12-28 | 中国工程物理研究院流体物理研究所 | A kind of double-layer grid tennis ball shape secondary electron collector |
| CN109142409A (en) * | 2018-10-15 | 2019-01-04 | 中国科学院高能物理研究所 | The measuring device and method of material secondary characteristic electron parameter in high and low temperature environment |
| CN112630288A (en) * | 2020-11-17 | 2021-04-09 | 燕山大学 | Secondary electron emission coefficient measuring device and method based on discharge |
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| CN109100380B (en) * | 2018-08-23 | 2020-12-22 | 中国工程物理研究院流体物理研究所 | Double-layer grid spherical secondary electron collector |
| CN109142409A (en) * | 2018-10-15 | 2019-01-04 | 中国科学院高能物理研究所 | The measuring device and method of material secondary characteristic electron parameter in high and low temperature environment |
| CN109142409B (en) * | 2018-10-15 | 2023-10-27 | 中国科学院高能物理研究所 | Device and method for measuring secondary electron characteristic parameters of materials in high and low temperature environments |
| CN112630288A (en) * | 2020-11-17 | 2021-04-09 | 燕山大学 | Secondary electron emission coefficient measuring device and method based on discharge |
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| CN104569014B (en) | 2017-01-25 |
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