CN102706914A - Measurement system and measurement method of secondary electron emission yield of dielectric material - Google Patents
Measurement system and measurement method of secondary electron emission yield of dielectric material Download PDFInfo
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- CN102706914A CN102706914A CN2012102198910A CN201210219891A CN102706914A CN 102706914 A CN102706914 A CN 102706914A CN 2012102198910 A CN2012102198910 A CN 2012102198910A CN 201210219891 A CN201210219891 A CN 201210219891A CN 102706914 A CN102706914 A CN 102706914A
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Abstract
The invention discloses a measurement system and a measurement method of a secondary electron emission yield of dielectric material. The measurement system comprises a Faraday cup and a pulse electron gun, wherein an incident beam generated by the pulse electron gun outside the Faraday cup irradiates on a sample through an electronic entrance port on a tube, and an automatic voltage regulator circuit is electrically connected between a sample back electrode and an earth wire, so that the level on the sample surface is kept constant relative to a potential difference between the electron guns. The voltage regulating range of the voltage adjustor circuit is controlled by a feedback control circuit in real time, so as to ensure that charging potential of the sample is compensated in real time, and current probes for measuring net collection current and secondary electron current are respectively connected between the sample and a voltage controlled power source of the voltage regulator circuit, and connected with the Faraday cup. According to the measurement system and the method disclosed by the invention, are simple extra consumer power equipment such as an ion source and the like and related experimental links are not needed, the measurement efficiency is high, and the measurement is continuous without stopping to carry out work such as energy dissipation, surface level measurement and the like after each irradiation pulse, and the measurement error is small.
Description
Technical field
The invention belongs to the technical field of space application of space material, be specifically related to a kind of measuring system and measuring method of secondary electron yield.
Background technology
The measuring method of existing dielectric material secondary electron yield generally adopts modes such as ion beam or ultraviolet irradiation to the sample surfaces electric treatment that disappears; Carry out the measurement of secondary electron yield after the processing; Yet; This measuring method not only makes measuring complex, and experimental precision and efficient are all limited.For example; One Chinese patent application CN201010617890.2 " a kind of proving installation of distinguishing material secondary electronics and backscattered electron " discloses a kind of proving installation of distinguishing material secondary electronics and backscattered electron; This device comprises light hurdle, Faraday cup, current collector, insulating mat, retardance aperture plate and sample stage; This device can be distinguished secondary electron and the backscattered electron that produces after primary electron and the material effects, analyzes the function of secondary electron and backscattered electron power spectrum in addition, but in the secondary electron measuring process; Incident beam charges to sample; The surface potential of sample can further influence the actual energy that incident electron arrives sample surfaces, therefore, can exert an influence to intending measurement " secondary electron yield one incident electron energy " curve.
Summary of the invention
In order to address the above problem; The present invention proposes a kind of measuring system and measuring method of dielectric material secondary electron yield; This measuring method need not to sample disappear electric treatment, through the surface potential compensation measuring error that electric treatment introduces of effectively having avoided disappearing, significantly improved efficiency of measurement simultaneously.
To achieve these goals, the present invention has adopted following technical scheme:
A kind of measuring system of dielectric material secondary electron yield; Comprise Faraday cup, pulsed electron rifle; Wherein Faraday cup is provided with the electron impact mouth; The outer pulsed electron rifle of Faraday cup produces the incident electron of different-energy and passes said electron impact mouth and incides on the dielectric material sample to be measured in the tube; Be electrically connected with automatic voltage regulating circuit between dielectric material sample back electrode to be measured and the ground wire so that the sample surfaces current potential is carried out real-Time Compensation, make the sample surfaces current potential keep constant with respect to the potential difference (PD) between the electron gun, the pressure regulation amplitude of this regulating circuit is controlled by feedback control circuit in real time; Feedback control signal is through the ground current signal of collected specimens back electrode; Relation according to charging potential and electric current obtains a Regulation Control signal through integrating circuit again, exchange the pressure amplitude degree and control in real time, thereby the charging potential that guarantees sample obtains real-Time Compensation; Be connected with the clean collected current of current probe with measuring samples between the voltage controller power source of sample and automatic voltage regulating circuit, Faraday cup also is electrically connected with current probe to measure the secondary electron electric current of Faraday cup.
Wherein, dielectric material sample to be measured is electrically connected with regulating circuit through the back metal electrode;
Wherein, above-mentioned metal electrode is preferably silver electrode or copper electrode.
Wherein, two probes can also be in series with the oscillograph (not shown) respectively, to store and to read the current probe data.
Preferably, the pulsewidth of electron beam is less than 1ms.
A kind of method of utilizing above-mentioned measuring system measuring media material secondary electron emission coefficiency may further comprise the steps:
A. unbalanced pulse electron gun, the electron beam irradiation sample of generation promptly produces secondary electron;
B. the current probe that is electrically connected through said sample backplate measures induction current, and this induction current is the incident electron electric current I
0With the secondary electron electric current I
SeDifference I
1=I
0-I
Se
C. the Faraday cup under positive bias 2 is all collected the secondary electron of sample emission, and measures the secondary electron electric current I through connected current probe
2=I
Se
D. pass through I
1/ (I
1+ I
2) calculate secondary electron yield.
The present invention's advantage compared with prior art is:
1. measuring system and method are simple, do not need extra electric equipment and the related experiment links of disappearing such as ion gun; 2 efficiency of measurement are high, and a sample can carry out pulsed irradiation continuously to be measured, and need not behind each irradiance pulse, all to stop implementing to disappear work such as electric treatment and surface potential measurement; 3. error is less, has avoided changing the indirect measuring error of bringing because of the disappear direct error that electric treatment introduces and the material property that causes thus of irradiation such as ion.
Description of drawings
Fig. 1 is the structural representation of the measuring system of dielectric material secondary electron yield of the present invention.Wherein, 1 is the pulsed electron rifle; 2 is Faraday cup; 3 is sample; 4 is regulating circuit; 5 is feedback control circuit; 6 is current probe; 7 is current probe.
Fig. 2 is the secondary electron measuring principle synoptic diagram of measuring method of the present invention;
Embodiment
What below introduce is the embodiment as content according to the invention, through embodiment said content of the present invention is further illustrated below.Certainly, describe following embodiment and only be the content of example different aspect of the present invention, and should not be construed as the restriction scope of the invention.
With reference to Fig. 1, Fig. 1 is the structural representation of the measuring system of dielectric material secondary electron yield of the present invention.Wherein, the measuring system of dielectric material secondary electron yield of the present invention comprises Faraday cup, pulsed electron rifle; Wherein Faraday cup is provided with the electron impact mouth; Faraday cylinder can be used to collect the secondary electron that sample produces under the positive bias that applies about ten volts, the outer pulsed electron rifle of Faraday cup produces the incident beam (its pulsewidth is less than 1ms, and energy range is confirmed according to the measurement needs) of different-energy and passes said electron impact mouth and incides on the dielectric material sample to be measured in the tube; Be electrically connected with automatic voltage regulating circuit between dielectric material sample to be measured and the ground wire so that the sample surfaces current potential is carried out real-Time Compensation; Make the sample surfaces current potential keep constant with respect to the potential difference (PD) between the electron gun, the pressure regulation amplitude of this regulating circuit is controlled by feedback control circuit in real time, and feedback control signal is through the ground current signal of collected specimens back electrode; Relation according to charging potential and electric current obtains a Regulation Control signal through integrating circuit again; Exchange the pressure amplitude degree and control in real time, specifically, it is from sample ground current acquired signal; Advance integral processing and produced Regulation Control signal input regulating circuit; Thereby the charging potential that guarantees sample obtains real-Time Compensation, is connected with the clean collected current of current probe with measuring samples between the voltage controller power source of sample and automatic voltage regulating circuit, and this current probe also is sample ground current probe; Be used for the ground current of measuring samples under electron beam irradiation; This electric current is incident electron electric current and secondary electron difference between currents, and in addition, Faraday cup also is electrically connected with current probe to measure the secondary electron electric current of Faraday cup.In addition, two probes can also be in series with the oscillograph (not shown) respectively, to store and to read the current probe data.
Thereby this method mainly is employed in the sample back electrode and inserts the means that regulating circuit implements to compensate to the sample surfaces current potential and eliminate the influence of surface potential to incident electron, and its principle is following:
The sample surfaces current potential is 0 before the charging, and the voltage of establishing electron gun is U, and then the energy of incident electron arrival sample is eU.Suppose that sample surfaces is charged to current potential Vs=-V in the measuring process; Under the situation that does not adopt potential compensation; The actual energy that electronics arrives sample is e (U-V), and after sample was applied in bias voltage V, the sample surfaces current potential was adjusted to 0; Thereby the actual energy during the electron impact sample still is eU, and is as shown in Figure 2.
The electron beam irradiation sample 3 that electron gun 1 produces promptly produces secondary electron in the back, and the induction current that the current probe 6 of sample back electrode measures is the incident electron electric current I
0With the secondary electron electric current I
SeDifference I
1=I
0-I
SeFaraday cup 2 is all collected the secondary electron electric current I with the secondary electron of sample emission under the positive bias of several volts
2=I
SeMeasure by current probe 7; Secondary electron yield is by I
1/ (I
1+ I
2) obtain.
The pressure regulation amplitude of regulating circuit 4 is controlled by feedback control circuit 5, implements the control sample surfaces and is in zero potential.Feedback control circuit carries out sampling analysis and calculates feedback voltage signal according to the relation of electric current and current potential current probe 6, and regulating circuit 4 is carried out automatic control and adjustment.
To the influence of incident electron, this method adopts following scheme to sample surfaces current potential in the measuring process: 1) Faraday cylinder 2 bias voltages are arranged on about ten volts; 2) open electron gun 1, sample is carried out single pulse irradiation and reads beam energy with the electron beam of certain energy; 3) read the data I of current probe 6 from oscillograph
1Data I with probe 7
2, calculate secondary electron yield=I
2/ (I
1+ I
2); 4) change the incident electron beam energy, repeat said process, obtain the secondary electron yield under the different main electron energies, draw " secondary electron coefficient-main electron energy " curve of specimen material.Wherein, Through between sample back electrode and ground, inserting regulating circuit 4; The sample surfaces current potential is implemented compensation; Make the sample surfaces current potential keep constant, thereby the current potential when electronics arrives sample in measuring process is constant all the time, thereby has avoided the electric treatment that disappears sample with respect to the potential difference (PD) between the electron gun.In addition, through the pressure regulation amplitude of regulating circuit 4 is implemented real-time 5 controls by feedback control circuit, feedback control signal back electrode electric current per sample calculates.According to the secondary electron electric current of Faraday cup and the clean incident current of sample, can obtain the secondary electron yield under the corresponding electron energy.
Although the preceding text specific embodiments of the invention has given to describe in detail and explanation; But what should indicate is; Those skilled in the art can carry out various equivalences to above-mentioned embodiment according to spirit of the present invention and change and modification; The function that it produced all should be within protection domain of the present invention when not exceeding spiritual that instructions and accompanying drawing contain.
Claims (7)
1. the measuring system of a dielectric material secondary electron yield; Comprise Faraday cup, pulsed electron rifle; Wherein Faraday cup is provided with the electron impact mouth; The outer pulsed electron rifle of Faraday cup produces the incident electron of different-energy and passes said electron impact mouth and incides on the dielectric material sample to be measured in the tube; Be electrically connected with automatic voltage regulating circuit between dielectric material sample back electrode to be measured and the ground wire so that the sample surfaces current potential is carried out real-Time Compensation, make the sample surfaces current potential keep constant with respect to the potential difference (PD) between the electron gun, the pressure regulation amplitude of this regulating circuit is controlled by feedback control circuit in real time; Feedback control signal is through the ground current signal of collected specimens back electrode; Relation according to charging potential and electric current obtains a Regulation Control signal through integrating circuit again, exchange the pressure amplitude degree and control in real time, thereby the charging potential that guarantees sample obtains real-Time Compensation; Be connected with the clean collected current of current probe with measuring samples between the voltage controller power source of sample and automatic voltage regulating circuit, Faraday cup also is electrically connected with current probe to measure the secondary electron electric current of Faraday cup.
2. measuring system as claimed in claim 1, wherein, dielectric material sample to be measured is electrically connected with regulating circuit through the back metal electrode.
3. measuring system as claimed in claim 2, wherein, above-mentioned metal electrode is preferably silver electrode or copper electrode.
4. like each described measuring system of claim 1-3, wherein, two probes are in series with oscillograph respectively, to store and to read the current probe data.
5. like each described measuring system of claim 1-3, wherein, the pulsewidth of electron beam is less than 1ms.
6. method of utilizing each described measuring system measuring media material secondary electron emission coefficiency of claim 1-5 may further comprise the steps:
A. unbalanced pulse electron gun, the electron beam irradiation sample of generation promptly produces secondary electron;
B. the current probe that is electrically connected through said sample backplate measures induction current, and this induction current is the incident electron electric current I
oWith the secondary electron electric current I
SeDifference I
1=I
0-I
Se
C. the Faraday cup under positive bias 2 is all collected the secondary electron of sample emission, and measures the secondary electron electric current I through connected current probe
2=I
Se
D. pass through I
1/ (I
1+ I
2) calculate secondary electron yield.
7. method as claimed in claim 6, wherein, the pulsewidth of said electron beam is less than 1ms.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103713001A (en) * | 2013-12-03 | 2014-04-09 | 西安交通大学 | Measurement system and measurement method for secondary electron emission coefficient of medium film |
| CN103776857A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Semispherical electronic collecting device and measurement method for secondary electron yield measurement |
| CN103776858A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Panel type collection device and method for measuring secondary electron emission coefficient |
| CN104407236A (en) * | 2014-11-12 | 2015-03-11 | 西安交通大学 | Method for eliminating surface charge of material in vacuum |
| CN104569014A (en) * | 2014-10-27 | 2015-04-29 | 西安空间无线电技术研究所 | Method and device for testing secondary electron emission coefficient of material under all incidence angles |
| CN105987889A (en) * | 2015-02-11 | 2016-10-05 | 中国科学院空间科学与应用研究中心 | Measuring apparatus for photoelectronic emission of metal material of satellite and application method thereof |
| CN108387597A (en) * | 2017-12-19 | 2018-08-10 | 西安空间无线电技术研究所 | Measure the device and method of low energy range metal material secondary electron yield |
| CN110220929A (en) * | 2019-06-14 | 2019-09-10 | 北方夜视技术股份有限公司 | A kind of device and method measuring material secondary electron emission coefficiency |
| CN111220638A (en) * | 2020-01-15 | 2020-06-02 | 西安交通大学 | Cross-temperature-zone electron/ion desorption and secondary electron yield comprehensive testing device |
| CN112630288A (en) * | 2020-11-17 | 2021-04-09 | 燕山大学 | Secondary electron emission coefficient measuring device and method based on discharge |
| CN113495082A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Secondary electron emission coefficient measuring device |
| CN113533404A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Insulating dielectric material secondary electron yield test method and application |
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Cited By (19)
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| CN103713001A (en) * | 2013-12-03 | 2014-04-09 | 西安交通大学 | Measurement system and measurement method for secondary electron emission coefficient of medium film |
| CN103713001B (en) * | 2013-12-03 | 2016-04-27 | 西安交通大学 | The measuring system of the secondary electron yield of dielectric film and measuring method thereof |
| CN103776857B (en) * | 2014-01-17 | 2016-04-27 | 西安交通大学 | The dome-type electron collection device measured for secondary electron yield and measuring method |
| CN103776857A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Semispherical electronic collecting device and measurement method for secondary electron yield measurement |
| CN103776858A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Panel type collection device and method for measuring secondary electron emission coefficient |
| CN103776858B (en) * | 2014-01-17 | 2016-11-23 | 西安交通大学 | A kind of plate collection device measuring secondary electron yield and measuring method |
| CN104569014A (en) * | 2014-10-27 | 2015-04-29 | 西安空间无线电技术研究所 | Method and device for testing secondary electron emission coefficient of material under all incidence angles |
| CN104569014B (en) * | 2014-10-27 | 2017-01-25 | 西安空间无线电技术研究所 | Method and device for testing secondary electron emission coefficient of material under all incidence angles |
| CN104407236A (en) * | 2014-11-12 | 2015-03-11 | 西安交通大学 | Method for eliminating surface charge of material in vacuum |
| CN105987889A (en) * | 2015-02-11 | 2016-10-05 | 中国科学院空间科学与应用研究中心 | Measuring apparatus for photoelectronic emission of metal material of satellite and application method thereof |
| CN108387597A (en) * | 2017-12-19 | 2018-08-10 | 西安空间无线电技术研究所 | Measure the device and method of low energy range metal material secondary electron yield |
| CN108387597B (en) * | 2017-12-19 | 2021-02-05 | 西安空间无线电技术研究所 | Device and method for measuring secondary electron emission coefficient of metal material in low energy range |
| CN110220929A (en) * | 2019-06-14 | 2019-09-10 | 北方夜视技术股份有限公司 | A kind of device and method measuring material secondary electron emission coefficiency |
| CN110220929B (en) * | 2019-06-14 | 2021-08-10 | 北方夜视技术股份有限公司 | Device and method for measuring secondary electron emission coefficient of material |
| CN111220638A (en) * | 2020-01-15 | 2020-06-02 | 西安交通大学 | Cross-temperature-zone electron/ion desorption and secondary electron yield comprehensive testing device |
| CN113495082A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Secondary electron emission coefficient measuring device |
| CN112630288A (en) * | 2020-11-17 | 2021-04-09 | 燕山大学 | Secondary electron emission coefficient measuring device and method based on discharge |
| CN113533404A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Insulating dielectric material secondary electron yield test method and application |
| CN113533404B (en) * | 2021-07-13 | 2023-04-28 | 中国工程物理研究院流体物理研究所 | Method for testing secondary electron yield of insulating medium material and application |
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