CN102109477A - Testing device for distinguishing secondary electrons and back scattered electrons of material - Google Patents
Testing device for distinguishing secondary electrons and back scattered electrons of material Download PDFInfo
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- CN102109477A CN102109477A CN 201010617890 CN201010617890A CN102109477A CN 102109477 A CN102109477 A CN 102109477A CN 201010617890 CN201010617890 CN 201010617890 CN 201010617890 A CN201010617890 A CN 201010617890A CN 102109477 A CN102109477 A CN 102109477A
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Abstract
The invention relates to a testing device for distinguishing secondary electrons and back scattered electrons of a material, and belongs to the technical field of space application. The device comprises a diaphragm, a Faraday cylinder, a current collector, insulation pads, a retarding grid and a sample holder, wherein the diaphragm is positioned at the electron emission port of an electron emission device; the middle of the diaphragm is provided with a small hole; the Faraday cylinder can freely move, is positioned in the rear of the diaphragm when the electrons are measured, and is withdrawn from the device after the electrons are measured; a semicircular arc of which the middle is provided with a through hole is formed by the current collector, the insulation pads and the retarding grid; the retarding grid and the current collector are positioned on the inner side and the outer side of the semicircular arc respectively; the insulation pads are positioned on the left and right sides of the through hole respectively; the current collector and the retarding grid on the left part and the current collector and the retarding grid on the right part are connected respectively; and the sample holder opposite to the through hole is positioned at the bottom of the semicircular arc. The device can distinguish the secondary electrons and the back scattered electrons which are generated after primary electrons act with the material, and has the function of analyzing a secondary electron spectrum and a back scattered electron spectrum.
Description
Technical field
The present invention relates to a kind of proving installation of distinguishing material secondary electronics and backscattered electron, belong to technical field of space application.
Background technology
Spacecraft discharges and recharges effect may produce the electromagnetic pulse with instantaneous high pressure and heavy current feature, cause spaceborne responsive electronic devices and components to damage and the assembly misoperation, disturb the communication on spacecraft and ground, even cause the failure of spacecraft flight task, therefore, urgent need has been developed the spacecraft charging analysis software, and assessment spacecraft charging state instructs spacecraft to prevent charged design and select material.
The spacecraft charging analysis software of having developed all needs to import the correlation parameter of institute's analysis of material, and therefore charged computed in software result's accuracy depends on the accuracy of institute's input material correlation parameter to a great extent.Secondary electron yield is the important materials characteristic parameter of decision spacecraft surface charging speed and equilibrium potential, therefore need set up the database of space material secondary electron yield, lays the foundation for the spacecraft charging analysis software accurately calculates.
Secondary electron is because primary electron collision material surface is had an effect the electronics of the material that inspires self, the electronics of the energy that secondary electron is below 50ev with material.Backscattered electron is the electronics that primary electron and material effects back reflection are returned, and the backscattered electron energy is more than 50eV.For spacecraft surface charging situation, the influence degree of the backscattering coefficient of material backscattered electron obviously is weaker than the material secondary electron emission coefficiency.In order to calculate the charged situation of material surface preparatively, essential secondary electron and the backscattered electron of effectively distinguishing material.The proving installation of present existing material secondary electron emission coefficiency can not be distinguished secondary electron and backscattered electron, and there is error in the test of material secondary electron emission coefficiency.
Summary of the invention
Proving installation at existing material secondary electron emission coefficiency in the prior art can not be distinguished secondary electron and backscattered electron, the defective that the test of material secondary electron emission coefficiency is existed error, the purpose of this invention is to provide a kind of proving installation of distinguishing material secondary electronics and backscattered electron, be applicable to the test of material secondary electron emission coefficiency and backscattering coefficient.
Technical scheme of the present invention is as follows;
A kind of proving installation of distinguishing material secondary electronics and backscattered electron, described device comprises the light hurdle, Faraday cylinder, current collector, insulating mat, retardance aperture plate and sample stage.Wherein, the light field has an aperture to penetrate direction over against electronics in the electronics exit wound of bullet place of electron emitting device in the middle of the light hurdle; Faraday cylinder can move freely, and is positioned at the Guang Lan rear when electronics is measured, and aperture electronics ejaculation place on the light hurdle is measured and promptly withdrawn from described device after finishing; There is the semi arch of a through hole at center of the common composition of current collector, insulating mat and retardance aperture plate, current collector constitutes the outside of semi arch, the retardance aperture plate constitutes the inboard of semi arch, insulating mat lays respectively at the left and right sides of described through hole, left-half current collector and retardance aperture plate are coupled together, right half part current collector and retardance aperture plate are coupled together; Sample stage is positioned at the bottom and the through hole opposite position of described semi arch.
Wherein, the diameter of aperture is 1～5mm on the light hurdle, the beam spot size that control is passed through, and described electricity bundle spot is less than the area of specimen material; Insulating mat is made by insulating material; Light hurdle, current collector, retardance aperture plate are made by metal material.
The through-hole diameter at the common semi arch center of forming of described current collector, insulating mat and retardance aperture plate is 10～20mm.
The present invention is a kind of, and to distinguish the course of work of proving installation of material secondary electronics and backscattered electron as follows:
Pass the aperture on the light hurdle after the electron emitting device ejected electron penetrates, be positioned at Guang Lan rear Faraday cylinder of aperture on the light hurdle and collect and measure, obtain the current value of primary electron; After Faraday cylinder withdrawn from, can make primary electron pass through the through hole at the common semi arch center of forming of current collector, insulating mat and retardance aperture plate, the specimen material that is placed on the sample stage is carried out irradiation; The retardance aperture plate is by the lead external power supply, current collector is by the lead external galvanometer, when voltage is 0V on the retardance aperture plate, the current value that galvanometer records on the current collector is the current value sum of secondary electron and backscattered electron, when the voltage of retardance on the aperture plate be-during 50V, the electric current that galvanometer records on the current collector is the current value of backscattered electron, after deducting the current value of backscattered electron with the current value sum of secondary electron and backscattered electron, obtain the current value of secondary electron, the current value of secondary electron and the current value of primary electron are compared, obtain the secondary electron yield of specimen material, the current value of backscattered electron and the current value of primary electron are compared, obtain the backscattering coefficient of specimen material.
A kind of proving installation of distinguishing material secondary electronics and backscattered electron of the present invention also has the function of analyzing secondary electron power spectrum and backscattered electron power spectrum, by regulating the magnitude of voltage on the retardance aperture plate, can obtain the current data of each energy section of secondary electron and backscattered electron, but the energy spectrogram of the energy spectrogram of secondary electron and backscattered electron.
Beneficial effect
1. a kind of proving installation of distinguishing material secondary electronics and backscattered electron of the present invention has the function of difference material secondary electronics and backscattered electron, by adding-50V voltage to blocking on the aperture plate, can distinguish the secondary electron and the backscattered electron that produce after primary electron and the material effects, solve in the prior art proving installation of existing material secondary electron emission coefficiency and can not distinguish secondary electron and backscattered electron, the defective that the test of material secondary electron emission coefficiency is existed error, for the database of setting up the space material secondary electron yield provides more accurate data, for the accurate calculating of spacecraft charging analysis software is laid a good foundation;
2. a kind of proving installation of distinguishing material secondary electronics and backscattered electron of the present invention also has the function of secondary electron and backscattered electron energy spectrum analysis, by regulating the magnitude of voltage on the retardance aperture plate, can obtain the size of current of each energy section of secondary electron and backscattered electron, obtain the energy spectrogram of secondary electron and backscattered electron at last.
Description of drawings
Fig. 1 is a kind of structural representation of distinguishing material secondary electronics and backscattered electron proving installation of the present invention.
Fig. 2 is for distinguishing the secondary energy spectrogram of titanium sample under the 2keV electron irradiation that material secondary electronics and backscattered electron proving installation record with the present invention is a kind of among the embodiment.
Among the figure: the 1-electron gun, 2-light hurdle, the 3-Faraday cylinder, the 4-current collector, the 5-insulating mat, 6-blocks aperture plate, 7-sample stage.
Embodiment
Below in conjunction with accompanying drawing preferred implementation of the present invention is described in further detail.
As shown in Figure 1, a kind of proving installation of distinguishing material secondary electronics and backscattered electron, described device comprises light hurdle 2, Faraday cylinder 3, current collector 4, insulating mat 5, retardance aperture plate 6 and sample stage 7.Wherein, light hurdle 2 is positioned at electronics ejaculation place of electron gun 1, has an aperture to penetrate direction over against electronics in the middle of the light hurdle 2; Faraday cylinder 3 can move freely, and is positioned at 2 rears, light hurdle when electronics is measured, and aperture electronics ejaculation place on the light hurdle 2 is measured and promptly withdrawn from described device by air pressure valve after finishing; There is the semi arch of a through hole at current collector 4, insulating mat 5 and center of the common composition of retardance grid 6 nets, current collector 4 constitutes the outside of semi arch, retardance aperture plate 6 constitutes the inboard of semi arch, insulating mat 5 lays respectively at the left and right sides of described through hole, left-half current collector 4 and retardance aperture plate 6 are coupled together, right half part current collector 4 and retardance aperture plate 6 are coupled together; Sample stage 7 is positioned at the bottom and the through hole opposite position of described semi arch.
Wherein, the diameter of aperture is 2mm on the described smooth hurdle 2, uses specimen material to be 30mm as diameter, thickness is the titanium of 5mm, Faraday cylinder 3 designs for centrum, and radially than being 1: 3, the through-hole diameter at described current collector 4, insulating mat 5 and the retardance aperture plate 6 common semi arch centers of forming is 20mm; Insulating mat 5 is made by insulating material; Light hurdle 2 by stainless steel material make, current collector 4 becomes by copper with retardance aperture plate 6.
The course of work of described device is as follows:
The electronics of the ejaculation of electron gun 1 is a primary electron, energy is 2keV, passes the aperture on the light hurdle 2 after electronics penetrates, and is positioned at 2 rears, light hurdle Faraday cylinder 3 of aperture on the light hurdle 2 and collects and measure, the current value that obtains primary electron is 30nA, by air pressure valve Faraday cylinder 3 is withdrawn from then; Draw and withdraw from the through hole that the back primary electron can pass through the semi arch centers of current collector 4, insulating mat 5 and retardance aperture plate 6 common compositions for the 3, the titanium sample that is placed on the sample stage 7 is carried out irradiation; Retardance aperture plate 6 is by the lead external power supply, current collector 4 is by the lead external galvanometer, when voltage is 0V on the retardance aperture plate 6, the current value that galvanometer records on the current collector 4 is 54.6nA, it is the current value sum of secondary electron and backscattered electron, when the voltage of retardance on the aperture plate 6 be-during 50V, the current value that galvanometer records on the current collector 4 is 10.3nA, it is the current value of backscattered electron, after deducting the current value of backscattered electron with the current value sum of secondary electron and backscattered electron, the current value that obtains secondary electron is 44.3nA, the current value of secondary electron and the current value of primary electron are compared, the secondary electron yield that obtains specimen material is 1.48, and the current value of backscattered electron and the current value of primary electron are compared, and the backscattering coefficient that obtains specimen material is 0.34.
Regulate the magnitude of voltage on the retardance aperture plate 6, each voltage-regulation value is 0.5V, and current collector 4 can obtain the current value data of each energy section of secondary electron, can obtain the energy spectrogram of secondary electron, as shown in Figure 2.
The present invention includes but be not limited to above embodiment, every any being equal to of carrying out under the spirit and principles in the present invention, replace or local improvement, all will be considered as within protection scope of the present invention.
Claims (3)
1. proving installation of distinguishing material secondary electronics and backscattered electron, it is characterized in that: described device comprises light hurdle (2), Faraday cylinder (3), current collector (4), insulating mat (5), retardance aperture plate (6) and sample stage (7); Wherein, light hurdle (2) are positioned at the electronics exit wound of bullet place of electron emitting device, have an aperture to penetrate direction over against electronics in the middle of light hurdle (2); Faraday cylinder (3) can move freely, and is positioned at rear, light hurdle (2) when electronics is measured, and goes up ejaculation place of aperture electronics over against Guang Lan (2), promptly withdraws from described device after measurement finishes; Current collector (4), insulating mat (5) and retardance aperture plate (6) are formed the semi arch that there is a through hole at a center jointly, current collector (4) constitutes the outside of semi arch, retardance aperture plate (6) constitutes the inboard of semi arch, insulating mat (5) lays respectively at the left and right sides of described through hole, left-half current collector (4) and retardance aperture plate (6) are coupled together, right half part current collector (4) and retardance aperture plate (6) are coupled together; Sample stage (7) is positioned at the bottom and the through hole opposite position of described semi arch;
Wherein, the diameter that light hurdle (2) go up aperture is 1～5mm, the beam spot size that control is passed through, and described electricity bundle spot is less than the area of specimen material; Insulating mat (5) is made by insulating material; Light hurdle (2), current collector (4), retardance aperture plate (6) are made by metal material.
2. a kind of proving installation of distinguishing material secondary electronics and backscattered electron according to claim 1 is characterized in that: the through-hole diameter at described current collector (4), insulating mat (5) and the common semi arch center of forming of retardance aperture plate (6) is 10～20mm.
3. a kind of proving installation of distinguishing material secondary electronics and backscattered electron according to claim 1 and 2 is characterized in that: described device has the function of analyzing secondary electron power spectrum and backscattered electron power spectrum.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102706914A (en) * | 2012-06-29 | 2012-10-03 | 北京卫星环境工程研究所 | Measurement system and measurement method of secondary electron emission yield of dielectric material |
| CN102967615A (en) * | 2012-11-16 | 2013-03-13 | 中国航天科技集团公司第五研究院第五一〇研究所 | Secondary-electron emission angle distribution testing system |
| CN103713001A (en) * | 2013-12-03 | 2014-04-09 | 西安交通大学 | Measurement system and measurement method for secondary electron emission coefficient of medium film |
| CN103776857A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Semispherical electronic collecting device and measurement method for secondary electron yield measurement |
| CN106093094A (en) * | 2016-07-19 | 2016-11-09 | 西安交通大学 | The secondary electron spectral measurement device of a kind of dielectric material and measuring method |
| CN109060855A (en) * | 2018-08-23 | 2018-12-21 | 中国工程物理研究院流体物理研究所 | A kind of metal surface secondary electron yield test method |
| CN109100380A (en) * | 2018-08-23 | 2018-12-28 | 中国工程物理研究院流体物理研究所 | A kind of double-layer grid tennis ball shape secondary electron collector |
| CN110161065A (en) * | 2018-02-11 | 2019-08-23 | 中国科学院电工研究所 | A kind of measurement of secondary electron yield and energy spectrum analysis device |
| CN112305326A (en) * | 2019-07-31 | 2021-02-02 | 中国科学院国家空间科学中心 | Device for measuring surface potential of moon in place |
| CN113495081A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Method for measuring secondary electron emission coefficient |
| CN113495082A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Secondary electron emission coefficient measuring device |
| CN113533404A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Insulating dielectric material secondary electron yield test method and application |
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| CN105092626B (en) * | 2015-07-13 | 2017-11-21 | 中国科学院高能物理研究所 | The measurement apparatus and method of secondary electron characterisitic parameter |
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Cited By (18)
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| CN102706914A (en) * | 2012-06-29 | 2012-10-03 | 北京卫星环境工程研究所 | Measurement system and measurement method of secondary electron emission yield of dielectric material |
| CN102706914B (en) * | 2012-06-29 | 2015-03-18 | 北京卫星环境工程研究所 | Measurement system and measurement method of secondary electron emission yield of dielectric material |
| CN102967615A (en) * | 2012-11-16 | 2013-03-13 | 中国航天科技集团公司第五研究院第五一〇研究所 | Secondary-electron emission angle distribution testing system |
| CN102967615B (en) * | 2012-11-16 | 2014-11-05 | 中国航天科技集团公司第五研究院第五一〇研究所 | Secondary-electron emission angle distribution testing system |
| CN103713001A (en) * | 2013-12-03 | 2014-04-09 | 西安交通大学 | Measurement system and measurement method for secondary electron emission coefficient of medium film |
| CN103713001B (en) * | 2013-12-03 | 2016-04-27 | 西安交通大学 | The measuring system of the secondary electron yield of dielectric film and measuring method thereof |
| CN103776857A (en) * | 2014-01-17 | 2014-05-07 | 西安交通大学 | Semispherical electronic collecting device and measurement method for secondary electron yield measurement |
| CN103776857B (en) * | 2014-01-17 | 2016-04-27 | 西安交通大学 | The dome-type electron collection device measured for secondary electron yield and measuring method |
| CN106093094A (en) * | 2016-07-19 | 2016-11-09 | 西安交通大学 | The secondary electron spectral measurement device of a kind of dielectric material and measuring method |
| CN110161065A (en) * | 2018-02-11 | 2019-08-23 | 中国科学院电工研究所 | A kind of measurement of secondary electron yield and energy spectrum analysis device |
| CN109060855A (en) * | 2018-08-23 | 2018-12-21 | 中国工程物理研究院流体物理研究所 | A kind of metal surface secondary electron yield test method |
| CN109100380A (en) * | 2018-08-23 | 2018-12-28 | 中国工程物理研究院流体物理研究所 | A kind of double-layer grid tennis ball shape secondary electron collector |
| CN109100380B (en) * | 2018-08-23 | 2020-12-22 | 中国工程物理研究院流体物理研究所 | Double-layer grid spherical secondary electron collector |
| CN112305326A (en) * | 2019-07-31 | 2021-02-02 | 中国科学院国家空间科学中心 | Device for measuring surface potential of moon in place |
| CN113495081A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Method for measuring secondary electron emission coefficient |
| CN113495082A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Secondary electron emission coefficient measuring device |
| CN113533404A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Insulating dielectric material secondary electron yield test method and application |
| CN113533404B (en) * | 2021-07-13 | 2023-04-28 | 中国工程物理研究院流体物理研究所 | Method for testing secondary electron yield of insulating medium material and application |
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