CN103760181A - Method and system for testing secondary electron yield of star-used dielectric materials - Google Patents
Method and system for testing secondary electron yield of star-used dielectric materials Download PDFInfo
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- CN103760181A CN103760181A CN201310722788.2A CN201310722788A CN103760181A CN 103760181 A CN103760181 A CN 103760181A CN 201310722788 A CN201310722788 A CN 201310722788A CN 103760181 A CN103760181 A CN 103760181A
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Abstract
The invention discloses a method and a system for testing secondary electron yield of star-used dielectric materials. The method comprises the following steps of placing at least one testing sample which is made of a star-used dielectric material on a sample platform, and vacuumizing the sample platform by using a vacuum system; turning on an electronic gun, launching a single pulse electron beam by the electronic gun or irradiating an incident electron testing Faraday cylinder placed on the sample platform, and testing the incident current intensity of the single pulse electron beam through a first micro-current meter; rotating the sample platform, placing any testing sample under the irradiation of the single pulse electron beam, and testing the secondary electron launching current of the testing sample by using a secondary electron collecting pole and a second micro-current meter; comparing the incident current intensity with the secondary electron launching current, thus obtaining the secondary electron yield of the sample. The method and the system provided by the invention have the advantages that after the primary high vacuum is obtained, the testing for the secondary electron yields of a plurality of testing samples can be developed, thus the testing efficiency is improved, and the testing accuracy is high.
Description
Technical field
The present invention relates to fields of measurement, relate in particular to method of testing and the test macro of a kind of star dielectric material secondary electron yield.
Background technology
The secondary electron emission characteristic of material plays an important role in commercial production and scientific research.In the charge and discharge process of spacecraft surface, surface dielectric material secondary electron emission characteristic has determined its charge rate and equilibrium potential, is the important parameter that affects spacecraft surface charging and discharging effects; Material secondary electron emission characteristic is for the partial-band electrical effect of high-voltage electrical tube simultaneously, and the research such as super high frequency tube secondary electron resonance effects and microwave component Multipactor is significant.
Due to the poorly conductive of dielectric material, when being subject to incident electron bombardment, surface, by stored charge, causes the variation of surface potential, thereby affects the transmitting of secondary electron.Document " Xie Aigen etc.; the development of secondary electron emission yield of insulator measurement mechanism; < < light laser and particle beams > > " proposes to adopt the electron beam of pulse characteristic, has tested the MgO material secondary electron emission coefficiency under 0.8-45keV electron irradiation.
At material secondary electron emission coefficiency test process, in order to make the normal work of electron gun and the secondary electron emission characteristic that does not affect material, in measuring process, need the vacuum tightness that reaches higher.And the weak point of institute's introduction method is to obtain the secondary electron yield that only can test a kind of material after a high vacuum in document, cause testing the needed time of single sample longer, testing efficiency is lower.The electron gun electron emission electric current simultaneously adopting in document is larger, and individual pulse electric current can reach 100 μ A, also can produce certain charge accumulated at material surface, thereby affect secondary electron emission characteristic.
Summary of the invention
Provide hereinafter about brief overview of the present invention, to the basic comprehension about some aspect of the present invention is provided.Should be appreciated that this general introduction is not about exhaustive general introduction of the present invention.It is not that intention is determined key of the present invention or pith, and nor is it intended to limit the scope of the present invention.Its object is only that the form of simplifying provides some concept, using this as the preorder in greater detail of discussing after a while.
On the one hand, the invention provides the test macro of a kind of star dielectric material secondary electron yield, comprising:
Sample stage, the test sample made from dielectric material for placing at least one star;
Vacuum system, for being evacuated described sample stage;
Electron gun, for launching high-energy electron irradiation test sample;
Incident electron test Faraday cylinder, described incident electron test Faraday cylinder is placed on described sample stage, be placed under the high-energy electron irradiation that described electron gun produces, and be connected with the first microgalvanometer, for testing the incident electron strength of current of the high energy electron that electron gun launches;
Secondary electron collector, is placed on the top of described test sample and is connected with the second microgalvanometer, for testing the secondary electron strength of current of described test sample.
On the other hand, the method for testing of total star dielectric material secondary electron yield after the present invention also provides, comprises step:
S21: test sample is placed on sample stage, and uses vacuum system that described sample stage is vacuumized;
S22: unlocking electronic rifle, produces high energy electron;
S23: described electron gun transmitting individual pulse electron beam, ejected electron bundle irradiates the incident electron test Faraday cylinder being placed on described sample stage, records the incident current intensity of individual pulse electron beam by the first microgalvanometer being connected with incident electron test Faraday cylinder;
S24: rotate described sample stage, arbitrary test sample is placed under individual pulse electron beam irradiation, utilizes the secondary electron collector that is placed on test sample top and the second microgalvanometer being connected with described secondary electron collector to record the secondary electric current of this test sample;
S25: by comparing incident current intensity and secondary electric current, can obtain the secondary electron yield of being tested sample by irradiation under this energy electron transmitting.
Method of testing and the test macro of dielectric material secondary electron yield for a kind of star provided by the invention, utilize rotatable sample stage to make the pulsed electron beam different test sample of irradiation successively, thereby record dielectric material secondary electron yield, have after the high vacuum of acquisition, can carry out the secondary electron yield test of multiple test samples etc., improve testing efficiency; And, the weak current strength electronic Shu Kaizhan dielectric material secondary electron yield test of the individual pulse that the present invention adopts, thus the impact of surface charging on secondary effectively reduced, have advantages of that measuring accuracy is high.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the method for testing schematic diagram of star of the present invention dielectric material secondary electron yield;
Fig. 2 is star of the present invention dielectric material secondary electron yield test sample stage vertical view;
Fig. 3 is star of the present invention dielectric material secondary electron yield method of testing process flow diagram.
Reference numeral:
1-electron gun; 2-electron gun control module;
3-incident electron test Faraday cylinder; 4-secondary electron collector;
5,6,7,8,9-sample box; 10-sample stage;
11-rotating mechanism; 12-observation window;
13-the first microgalvanometer; 14-the second microgalvanometer;
15-vacuum system.
Embodiment
For making object, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.The element of describing in an accompanying drawing of the present invention or a kind of embodiment and feature can combine with element and feature shown in one or more other accompanying drawing or embodiment.It should be noted that for purposes of clarity, in accompanying drawing and explanation, omitted expression and the description of unrelated to the invention, parts known to persons of ordinary skill in the art and processing.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not paying creative work, belongs to the scope of protection of the invention.
Embodiment mono-:
The invention provides the test macro of a kind of star dielectric material secondary electron yield, as shown in Figure 1, is test sample stage vertical view, comprising:
Electron gun 1, for launching high-energy electron irradiation test sample;
Incident electron test Faraday cylinder 3, described incident electron test Faraday cylinder 3 is placed on described sample stage, be placed under the high-energy electron irradiation that described electron gun produces, and be connected with the first microgalvanometer 13, for testing the incident electron strength of current of the high energy electron that electron gun launches;
On described sample stage 10, be evenly placed with sample box 5,6,7,8,9, in described sample box, be placed with different test samples, described test sample is type star dielectric material, be respectively kapton, cover glass, teflon, OSR and FR4, described sample box annular on sample stage is evenly put; Incident electron test Faraday cylinder is also placed on described sample stage, and on sample stage, annular is evenly put together with sample box, as shown in Figure 2.
Described star also comprises rotating mechanism 11 with the test macro of dielectric material secondary electron yield, and described rotating mechanism 11 is connected with sample stage 10, for specimen rotating holder 10.By described rotating mechanism, can make sample stage rotating 360 degrees, can make different test samples respectively under the electron irradiation in electron gun, in test process, obtaining after a high vacuum, as long as by rotating mechanism specimen rotating holder, different test samples respectively under electron irradiation, can be carried out to the secondary electron yield test of multiple test samples, improved testing efficiency.
Described test macro also comprises observation window 12, for observing the position of sample stage rotation.As shown in Figure 1, sample stage top has cover that described sample stage is closed, and after the state that is evacuated, tests, and can observe the variation of sample position by observation window 12, more convenient succinct.
As shown in Figure 2, incident electron test Faraday cylinder 3 and test sample 5-9 are positioned over respectively on described sample stage, on circular sample platform, evenly put, described incident electron test Faraday cylinder 3 is positioned under the irradiation of high energy electron of electron gun generation, and is connected with the first microgalvanometer 13.
Faraday cylinder is a kind of vacuum detector for measuring charged particle incident intensity, and the electric current recording can be used for judging the quantity of incident electron or ion.Incident electron test Faraday cylinder in the present embodiment is used for the strength of current of the incident electron of the high energy electron of testing electron gun transmitting.
Described secondary electron collector 4 is placed on the top of test sample, the invariant position of described secondary electron collector 4, by above-mentioned rotating mechanism specimen rotating holder, different test samples is forwarded to the below of secondary electron collector, can be used for collecting the secondary electron strength of current of different samples.
Described secondary electron collector 4 is also connected with the second microgalvanometer 14, after sample is placed under electron irradiation, records the secondary electric current of this sample by secondary electron collector 4 and the second microgalvanometer 14.
The ratio of the strength of current of the incident electron of above-mentioned acquisition and secondary electric current is the secondary electron yield of measure and monitor the growth of standing timber material.
Before electron gun transmitting high-energy electron irradiation test sample, need to be by vacuum system by the sample stage state that is evacuated, vacuum tightness requires to be better than 5 × 10
-4pa.In the present embodiment by vacuum keep 5 × 10
-4more than Pa, so that the accuracy of the data that test obtains.
Described system comprises electron gun 1, for launching high-energy electron irradiation test sample; Also comprise electron gun control module 2, for controlling the frequency of energy, beam intensity and transmitting of described electron gun electron emission.Before unlocking electronic rifle 1, need to arrange the correlation parameter of electron gun, by described electron gun control module 2, arrange, the incident electron energy range of choosing electron gun generation is 0.3-4keV, beam intensity is 50nA-20 μ A, transmission frequency can be single emission, and emission maximum frequency is 1MHz.In the present embodiment, controlling incident electron energy value is 0.5keV, and incident electron beam intensity is 100nA.
Electron gun transmitting Single Electron beam pulse described in the control of described electron gun control module, utilize incident electron test Faraday cylinder 3 to record the strength of current of individual pulse electron beam, adopt the test of the weak current strength electronic Shu Kaizhan star dielectric material secondary electron yield of individual pulse, effectively lowered the impact of surface charging on secondary, had advantages of that measuring accuracy is high.
Embodiment bis-:
The present invention also provides the method for testing of a kind of star dielectric material secondary electron yield, comprises step:
S21: test sample is placed on sample stage, and uses vacuum system that described test sample stage is vacuumized;
S22: unlocking electronic rifle, produces high energy electron;
S23: described electron gun transmitting individual pulse electron beam, ejected electron bundle irradiates the described incident electron test Faraday cylinder being placed on described sample stage, records the incident current intensity of individual pulse electron beam by the first microgalvanometer being connected with incident electron test Faraday cylinder;
S24: rotate described sample stage, arbitrary test sample is placed under individual pulse electron beam irradiation, utilizes the secondary electron collector that is placed on test sample top and the second microgalvanometer being connected with described secondary electron collector to record the secondary electric current of this test sample;
S25: by comparing incident current intensity and secondary electric current, can obtain the secondary electron yield of being tested sample by irradiation under this energy electron transmitting.
To test sample, for type star, dielectric material kapton, cover glass, teflon, OSR and FR4 are positioned over respectively in sample box 5-9, and described sample box is positioned on sample stage 10, be evenly distributed on sample stage with incident electron test Faraday cylinder 3, by rotating mechanism specimen rotating holder, different test samples can be placed under the high-energy electron irradiation of electron gun transmitting, and obtain after a high vacuum, complete the test to all samples, testing efficiency is higher.
Use vacuum system that described sample stage is evacuated, vacuum tightness requires to be better than 5 × 10
-4pa.
Unlocking electronic rifle, regulates electron gun control module, regulates the frequency of energy, beam intensity and the transmitting of electron gun electron emission, in the present embodiment, controlling incident electron energy value is 0.5keV, incident electron beam intensity is 100nA, and transmission frequency is individual pulse, and emission maximum frequency is 1MHz.Described incident electron test Faraday cylinder is placed on sample stage, rotate described sample stage and incident electron is tested to Faraday cylinder be placed under electron irradiation, by the first microgalvanometer 13 being connected with incident electron test Faraday cylinder 3, record the incident current intensity of individual pulse electron beam.
In the present invention, adopt the weak current strength electronic Shu Kaizhan star dielectric material secondary electron yield test of individual pulse, thereby effectively reduce the impact of surface charging on secondary, have advantages of that measuring accuracy is high.
Be connected with rotating mechanism with sample stage, by rotating described sample stage, a test sample kapton be placed under the irradiation of individual pulse electron beam, utilize secondary electron collector 4 and microgalvanometer 14 to record the secondary electric current of kapton sample.
By the incident current intensity and the secondary electric current that relatively record, obtain the electron energy of 0.5keV, under the electronic beam current intensity of 100nA, the secondary electron yield of kapton material.
After a kapton testing of materials completes, as long as by rotating mechanism specimen rotating holder, respectively by other samples, cover glass, teflon, OSR and FR4 are placed in respectively under the electron irradiation of identical energy one by one, and recycling secondary electron collector 4 and the second microgalvanometer 14 record the secondary electric current of different samples.
Then the secondary electric current of incident current intensity and different samples relatively, can obtain the electron energy of 0.5keV, under the electronic beam current intensity of 100nA by the secondary electron yield of irradiation sample.
By above-mentioned steps, can obtain the secondary electron yield of different samples under the electron irradiation of identical energy, by electron gun control module, regulate subsequently the energy of electron gun electron emission, obtain the secondary electron yield of same sample with the variation tendency of incident electron energy.
The energy range of described electron gun electron emission is 0.3-4keV,, by regulating electron gun control module, makes the energy of electron gun electron emission be changed to 3.5keV from 0.6keV now, and control single adjusting stepping is 0.1keV.To test respectively sample, kapton, cover glass, teflon, OSR and FR4 are positioned under the irradiation of electronics of different-energy, repeat above-mentioned steps S21 to S25, can obtain above-mentioned test sample secondary electron yield with incident electron energy, 0.5-3.5keV, variation tendency.
In the present invention, utilize rotatable sample stage to make the pulsed electron beam different samples of irradiation successively, thereby record dielectric material secondary electron yield, obtaining after the environment of a high vacuum, can launch the test of the secondary electron yield of multiple samples, have testing efficiency high, the advantage such as economize on resources.
In the embodiment such as apparatus and method of the present invention, obviously, each parts or each step reconfigure after can decomposing, combine and/or decomposing.These decomposition and/or reconfigure and should be considered as equivalents of the present invention.Simultaneously, in the above in the description of the specific embodiment of the invention, for a kind of embodiment, describe and/or the feature that illustrates can be used in same or similar mode in one or more other embodiment, combined with the feature in other embodiment, or substitute the feature in other embodiment.
Finally it should be noted that: although described above the present invention and advantage thereof in detail, be to be understood that in the case of not exceeding the spirit and scope of the present invention that limited by appended claim and can carry out various changes, alternative and conversion.And scope of the present invention is not limited only to the specific embodiment of the described process of instructions, equipment, means, method and step.One of ordinary skilled in the art will readily appreciate that from disclosure of the present invention, can use carry out with the essentially identical function of corresponding embodiment described herein or obtain process, equipment, means, method or step result essentially identical with it, that existing and will be developed future according to the present invention.Therefore, appended claim is intended to comprise such process, equipment, means, method or step in their scope.
Claims (10)
1. a test macro for dielectric material secondary electron yield for star, is characterized in that, comprising:
Sample stage, the test sample made from dielectric material for placing at least one star;
Vacuum system, for being evacuated described sample stage;
Electron gun, for launching high-energy electron irradiation test sample;
Incident electron test Faraday cylinder, described incident electron test Faraday cylinder is placed on described sample stage, be placed under the high-energy electron irradiation that described electron gun produces, and be connected with the first microgalvanometer, for testing the incident electron strength of current of the high energy electron that electron gun launches;
Secondary electron collector, is placed on the top of described test sample and is connected with the second microgalvanometer, for testing the secondary electron strength of current of described test sample.
2. the test macro of dielectric material secondary electron yield for star according to claim 1, is characterized in that, also comprises:
Rotating mechanism, described rotating mechanism is connected with sample stage, for specimen rotating holder;
Observation window, for observing the position of sample stage rotation.
3. the test macro of dielectric material secondary electron yield for star according to claim 1, is characterized in that, also comprises:
Electron gun control module, for controlling the frequency of energy, beam intensity and transmitting of described electron gun electron emission.
4. the test macro of dielectric material secondary electron yield for star according to claim 1, is characterized in that, described vacuum system is by the described sample stage state that is evacuated, and vacuum tightness requires to be better than 5 × 10
-4pa.
5. the test macro of dielectric material secondary electron yield for star according to claim 1, it is characterized in that, described in the control of described electron gun control module, the energy range of electron gun electron emission is 0.3-4keV, beam intensity is 50nA-20 μ A, and transmission frequency is that single emission, emission maximum frequency are 1MHz.
6. a method of testing for dielectric material secondary electron yield for star, is characterized in that, comprises step:
S21: the test sample that at least one star is made with dielectric material is placed on sample stage, and use vacuum system that described sample stage is vacuumized;
S22: unlocking electronic rifle, produces high energy electron;
S23: described electron gun transmitting individual pulse electron beam, ejected electron bundle irradiates the incident electron test Faraday cylinder being placed on described sample stage, records the incident current intensity of individual pulse electron beam by the first microgalvanometer being connected with incident electron test Faraday cylinder;
S24: rotate described sample stage, arbitrary test sample is placed under individual pulse electron beam irradiation, utilizes the secondary electron collector that is placed on test sample top and the second microgalvanometer being connected with described secondary electron collector to record the secondary electric current of this test sample;
S25: by comparing incident current intensity and secondary electric current, can obtain the secondary electron yield of the radiation exposed test sample under this energy electron transmitting.
7. the method for testing of dielectric material secondary electron yield for star according to claim 6, is characterized in that, also comprises:
By rotating mechanism specimen rotating holder, respectively other test samples are placed under electron irradiation, utilize secondary electron collector and the second microgalvanometer to record the secondary electric current of different test samples;
Compare again the secondary electric currents of incident current intensity and different test samples, can obtain the secondary electron yields of the radiation exposed difference test samples under this energy electron transmitting.
8. the method for testing of dielectric material secondary electron yield for star according to claim 6, is characterized in that, also comprises:
By electron gun control module, regulate the frequency of energy, beam intensity and the transmitting of electron gun electron emission, and repeat above-mentioned steps S22 to S25, obtain the variation tendency of test sample secondary electron yield with incident electron energy.
9. the method for testing of dielectric material secondary electron yield for star according to claim 6, is characterized in that, described use vacuum system vacuumizes described sample stage, and vacuum tightness requires to be better than 5 × 10
-4pa.
10. the method for testing of dielectric material secondary electron yield for star according to claim 6, it is characterized in that, described in the control of described electron gun control module, the energy range of electron gun electron emission is 0.3-4keV, beam intensity is 50nA-20 μ A, and transmission frequency is that single emission, emission maximum frequency are 1MHz.
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| CN104360176A (en) * | 2014-11-19 | 2015-02-18 | 中国人民解放军军械工程学院 | System for electrifying teflon through electron beam irradiation and testing electric quantity in teflon |
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| CN105987924A (en) * | 2015-02-11 | 2016-10-05 | 中国科学院空间科学与应用研究中心 | Measuring apparatus for secondary electron emission of metal surface of satellite and application method thereof |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000292380A (en) * | 1999-04-05 | 2000-10-20 | Canon Inc | Positive electron extinguishment analysing device |
| JP2002131254A (en) * | 2000-10-20 | 2002-05-09 | Canon Inc | Method for analyzing carbon thin-film surface |
| US20020088940A1 (en) * | 2001-01-10 | 2002-07-11 | Kenji Watanabe | Electron beam inspection system and inspection method and method of manufacturing devices using the system |
| US7842920B2 (en) * | 2006-12-14 | 2010-11-30 | Dcg Systems, Inc. | Methods and systems of performing device failure analysis, electrical characterization and physical characterization |
| US20110155905A1 (en) * | 2008-04-11 | 2011-06-30 | Ebara Corporation | Specimen observation method and device, and inspection method and device using the method and device |
| CN202066807U (en) * | 2011-05-17 | 2011-12-07 | 华南理工大学 | Electron collector being suitable for intelligently testing secondary electron emission coefficient of solid material |
| CN102288628A (en) * | 2011-05-18 | 2011-12-21 | 华南理工大学 | Device with intelligent measurement and control technology for testing secondary electronic emission coefficients of solid material |
| CN203337576U (en) * | 2013-07-23 | 2013-12-11 | 中国科学院金属研究所 | Multifunctional secondary electronic emission coefficient analyzing and testing device |
-
2013
- 2013-12-24 CN CN201310722788.2A patent/CN103760181B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000292380A (en) * | 1999-04-05 | 2000-10-20 | Canon Inc | Positive electron extinguishment analysing device |
| JP2002131254A (en) * | 2000-10-20 | 2002-05-09 | Canon Inc | Method for analyzing carbon thin-film surface |
| US20020088940A1 (en) * | 2001-01-10 | 2002-07-11 | Kenji Watanabe | Electron beam inspection system and inspection method and method of manufacturing devices using the system |
| US7842920B2 (en) * | 2006-12-14 | 2010-11-30 | Dcg Systems, Inc. | Methods and systems of performing device failure analysis, electrical characterization and physical characterization |
| US20110155905A1 (en) * | 2008-04-11 | 2011-06-30 | Ebara Corporation | Specimen observation method and device, and inspection method and device using the method and device |
| CN202066807U (en) * | 2011-05-17 | 2011-12-07 | 华南理工大学 | Electron collector being suitable for intelligently testing secondary electron emission coefficient of solid material |
| CN102288628A (en) * | 2011-05-18 | 2011-12-21 | 华南理工大学 | Device with intelligent measurement and control technology for testing secondary electronic emission coefficients of solid material |
| CN203337576U (en) * | 2013-07-23 | 2013-12-11 | 中国科学院金属研究所 | Multifunctional secondary electronic emission coefficient analyzing and testing device |
Non-Patent Citations (1)
| Title |
|---|
| 常天海等: "《基于空间材料二次电子发射系数自动测试系统》", 《半导体技术 增刊》 * |
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| CN109738288B (en) * | 2019-02-21 | 2024-02-13 | 中国工程物理研究院化工材料研究所 | Multifunctional modularized particle accelerator material irradiation sample holder |
| CN110146529A (en) * | 2019-05-16 | 2019-08-20 | 中国科学院高能物理研究所 | A kind of method of measuring medium material secondary electron emission coefficiency |
| CN111031651A (en) * | 2019-12-20 | 2020-04-17 | 北京工业大学 | Method for measuring plasma beam density distribution |
| CN111031651B (en) * | 2019-12-20 | 2022-02-08 | 北京工业大学 | Method for measuring plasma beam density distribution |
| CN113495082A (en) * | 2020-03-19 | 2021-10-12 | 清华大学 | Secondary electron emission coefficient measuring device |
| CN113533404A (en) * | 2021-07-13 | 2021-10-22 | 中国工程物理研究院流体物理研究所 | Insulating dielectric material secondary electron yield test method and application |
| CN113533404B (en) * | 2021-07-13 | 2023-04-28 | 中国工程物理研究院流体物理研究所 | Method for testing secondary electron yield of insulating medium material and application |
| WO2024092865A1 (en) * | 2022-11-04 | 2024-05-10 | 电子科技大学长三角研究院(湖州) | Deep dielectric charging and discharging test device and method under electron radiation |
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