CN104568610B - A kind of micron gate sensor and monitoring crack growth method for monitoring crack growth - Google Patents
A kind of micron gate sensor and monitoring crack growth method for monitoring crack growth Download PDFInfo
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- CN104568610B CN104568610B CN201410818212.0A CN201410818212A CN104568610B CN 104568610 B CN104568610 B CN 104568610B CN 201410818212 A CN201410818212 A CN 201410818212A CN 104568610 B CN104568610 B CN 104568610B
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Abstract
The invention discloses a kind of micron gate sensor and monitoring crack growth method for monitoring crack growth, it is related to Fracture of Metal Material toughness test field and fatigue crack real time monitoring field.Described micron gate sensor is double-decker, and bottom is ultrathin flexible macromolecule substrate layer, and top layer is that parallel way arranged in parallel is used between conductive micron grid line layer, grid line；Micron grid line layer thickness is nanoscale, the spread scenarios for passing through hard splicing agent and metal structure surface to be measured adhesion, in real time monitoring metal structure surface crackle at intervals of micron order, this micron of gate sensor between grid line yardstick and grid line；The micron grid line structure of the present invention directly contacts crack surfaces, and is ftractureed with crackle instrument, is the most direct method of monitoring crack spread scenarios；Applicable temperature 196 DEG C of ultralow temperature of covering is to 300 DEG C of scopes of high temperature；Without excessive space scale requirement, situation about can not be applicable available for monitoring methods such as microscopes.
Description
Technical field
The present invention relates to Fracture of Metal Material toughness test field and fatigue crack real time monitoring field, specially one
Micron grid line sensor described in planting the micron grid line Sensors ＆ Application for metal material surface monitoring crack growth is split
Line extension monitoring and the method for measurement, can be applied to the measurement of metal material quasistatic fracture toughness, aviation, automobile making, bridge
And big machinery equipment etc. typical metal structure health monitoring.
Background technology
Micron grid line sensor is a kind of film with micro- micro-structural for applying modern surface micro-processing technology to obtain
Sensor, the advantage is that can realize fine and closely woven grid line structure by micro-processing technologies such as uv-exposures, so that by adjusting grid
Line density and width carry out any adjustment between the two in raising film resistor and spatial resolution.With Crack Extension, grid line breaks
Split, due to the parallel-connection structure between grid line so that macro manifestations be resistance rise, and resistance rate of change with fracture grid line
Ratio proportional.Thus, real-time monitored over time is carried out to the extension of crackle using the grid line structure.
Micron grid sensing unit is capable of the cracking situation of accurate reacting metal body structure surface crackle in real time.The technology and mesh
Preceding conventional lossless detection method is such as：Sound emission, ultrasonic wave, electromagnetism are compared, and have unique advantage in terms of on-line monitoring,
It is with low cost, it is easy to realize integrated design with metal structure, does not have particular/special requirement to use environment, required supporting measurement can
From the commercially available commercial strain measuring instrument of any money, measurement cost can be greatlyd save.
The content of the invention
The technical problem to be solved in the present invention is to propose a kind of micron grid for metal structure surface monitoring crack growth
Sensor and monitoring crack growth method, can realize that real-time monitoring to metal structure surface crack propagation process and crackle are long
The real-time measurement of degree.
In order to solve the above technical problems, the technical scheme that the present invention takes is as follows.
A kind of micron gate sensor for metal structure surface monitoring crack growth, described micron gate sensor is double
Rotating fields, bottom is ultrathin flexible macromolecule substrate layer, and top layer is using arranged in parallel between conductive micron grid line layer, grid line
Parallel way；Micron grid line layer thickness is nanoscale, preferably 50~100 nanometers；Interval between grid line yardstick and grid line
For micron order, preferably 10~100 microns；This micron of gate sensor is glued by hard splicing agent and metal structure surface to be measured
It is attached, the spread scenarios of metal structure surface crackle are monitored in real time；The physical dimension of the micron gate sensor, grid line yardstick and close
Degree can need to carry out any adjustment according to the spatial resolution and precision of actual measurement, and it is increase to improve the method for spatial resolution
The density of grid line, carries width of the high-precision method for reduction grid line, and the physical dimension of micron gate sensor need to cover expected
Crack extending length.
Described substrate layer is a floor height molecular flexibility film, be mainly used in support micron grid line layer, transmission load and with
Metal surface is insulated, and macromolecule fexible film thickness is usually no more than 25 microns in substrate layer, need to have good crackle to enclose
Cracking property, can ftracture with the crackle of metal structure surface.
Described micron grid line layer is the one layer of tool prepared in substrate layer surface using uv-exposure, plated film and lift-off technology
There is the conductive layer of parallel grid line structure, specific process step is：
(1) macromolecule membrane substrate is cleaned：Film is respectively placed in absolute ethyl alcohol, acetone, isopropanol solvent successively
Ultrasonic wave is cleaned, and is then dried；Described macromolecule membrane can select Kapton, PET film, PVC film etc..
(2) using high speed sol evenning machine in one layer of negative photoresist of macromolecule membrane surface even spread, negative photoresist is thick
Degree is controlled below 1 micron, and with proper temperature (100 DEG C~150 DEG C) front baking；
(3) macromolecule membrane for being coated with negative photoresist is carried out using micron grid mask plate on ultraviolet exposure machine purple
Outer exposure, by the pattern transfer on mask plate to macromolecule membrane surface, and is dried afterwards with proper temperature (100 DEG C or so), with aobvious
Shadow liquid develops, the fixing processing of deionized water；
(4) using the method for magnetron sputtering or electron beam evaporation deposition, in the macromolecule membrane Jing Guo uv-exposure photoetching
The conductive material of surface evaporation high resistivity, such as metal Cr, Ni, depending on conductive material thickness foundation is to the demand of resistance, one
As can be controlled in hundred nano-scale；
(5) peel off：Using acetone or go glue (such as HL203) dissolve plated film after macromolecule membrane surface photoresist,
Make macromolecule membrane surface that the figure of parallel grid line is presented.
It is actually needed and designs according to the micron grid mask plate, depending on its physical dimension is with crack length and trend,
Core is to ensure that the fracture of every grid line can bring consistent change in resistance, and its design process need to consider the cloth of electrode
Put, grid line interval, the factor such as grid line width.
A kind of crack of metal surface extension monitoring method based on the micron gate sensor, the monitoring method is in metal
The non-fracture area arrangement micron gate sensor of body structure surface crack tip, as measurement grid, makes parallel grid line be each perpendicular to crackle
Cracking direction, in addition, in flawless region arrangement identical micron gate sensor as reference grating, using Wheatstone bridge half-bridge
The resistance of measuring method measurement measurement grid.The purpose of arrangement reference grating is to neutralize the thermal noise that grid line is produced in survey engineering.
With the extension of crack of metal surface, the film-substrate of measurement grid ftractures with face crack, thus cause micron grid line by
One fracture, due to the parallel relationship between grid line so that its all-in resistance in parallel is raised with the cracking of crackle, and then real time reaction is split
The length of line and the situation of change to the time.Crack length change can be obtained by resistance variations ratio calculation.
The Wheatstone bridge, may be selected any full-bridge strain gauge means commercial at present and measures.Measurement result
Only need the dimensionless proportionate relationship of measurement data and primary data, therefore to measurement result unit without being distinctly claimed.
The advantage of the invention is that：
1st, micron grid line structure directly contacts crack surfaces, and is ftractureed with crackle instrument, is monitoring crack spread scenarios
Most direct method；
2nd, Applicable temperature covers -196 DEG C of ultralow temperature to 300 DEG C of scopes of high temperature, has uniqueness especially under ultralow temperature
Applicable sexual clorminance；
3rd, without excessive space scale requirement, situation about can not be applicable available for monitoring methods such as microscopes；
4th, it is with low cost.
Brief description of the drawings
Fig. 1 is micron gate sensor structural representation；
Fig. 2 is micron gate sensor Making programme schematic diagram；
Fig. 3 is to carry out the schematic diagram of crack initiation measurement on compact tensile specimen surface；
Fig. 4 is that micron grid access Wheatstone bridge half bridge measurement circuit diagram；
Fig. 5 is the Monitoring Data of micron gate sensor and the correction data of crack length.
Embodiment
Below by taking the compact tensile specimen structure of metal material quasistatic fracture toughness test as an example, with reference to accompanying drawing to this
Invention elaborates.
Compact tensile specimen is in the prefabricated crackle of fatigue tester, and fatigue crack is by along the direction vertical with tensile axis
Extension.Prefabricating fatigue crack extends to the crack length of fracture not over 20mm, therefore designs the overall length of grid line arranged in parallel
Degree control is in 20mm.Design and produce the mask plate figure of micron gate sensor as shown in Figure 1.Every grid line length
10mm, the moire grids density being evenly arranged is 50lines/mm,.
Micron gate sensor is made, steps flow chart is as follows：
A. from 25 micron thickness Kaptons as substrate, film is respectively placed in successively absolute ethyl alcohol, acetone,
Ultrasonic wave is fully cleaned in isopropanol solvent, then oven for drying；
B. using high speed sol evenning machine in one layer of NR91500PY negative photoresist of macromolecule membrane surface even spread, negativity
Photoresist thickness control is at 1 micron, and 150 DEG C of temperature carry out front baking 60s on hot plate；
C. the macromolecule membrane for being coated with negative photoresist is carried out using micron grid mask plate on ultraviolet exposure machine purple
Outer exposure, makes photo resist photosensitive so as to by the photoresist of mask plate pattern transfer to polymeric membrane surface, and to be dried after 100 DEG C
90s, with RD6 developing liquid developings, the fixing processing of deionized water；
D. Danton magnetically controlled sputter methods are used, on evaporation metal Cr layers of the macromolecule membrane surface by ultraviolet photolithographic extremely
About 100 nano thickness；
E. strip step, i.e., removed the photoresist of film surface using acetone ultrasonic method, parallel grid line formed on surface
Figure；
F. the electrode of micron gate sensor is drawn with the enamel-covered wire of 0.12mm diameters for accessing measurement electricity using elargol
Road.
The micron gate sensor made is used into α-cyanoacrylate instant drying adhesive or quick-drying according to as shown in Figure 3
Bicomponent epoxy resin is gluing to invest the non-extended area of crack tip.After after glue thoroughly solidification, micron gate sensor lead is connect
Enter the testing resistance terminals of Wheatstone bridge；Equally, the micron prepared by the same way a gate sensor is accessed into electricity
The reference edge of bridge.As shown in Figure 4.
The compact tensile specimen for having adhered to micron gate sensor is loaded on QBG-200 type testing machines, application is not higher than
100N's preloads.Record now initial resistivity value.Crackle is used in opposite side of the compact tensile specimen without micron gate sensor
The spread scenarios of microscope for observing real-time monitored crackle, for the reference pair ratio with micron gate sensor measurement result.
Load is continued to, while the change in resistance of the gate sensor of monitoring measurement in real time.With the application of load, crackle is opened
Split, macromolecule membrane substrate ftractures therewith, the grid line at the substrate of cracking disconnects, so as to cause the change of resistance.As schemed
5, obvious resistance rises the pop-in expansion process for all having corresponded to a crackle to micron gate sensor every time.The real-time length of crackle
Degree can be determined by initial resistance with the ratio relation of the resistance measured during crack initiation.
Claims (1)
1. a kind of crack of metal surface extension monitoring method based on micron gate sensor, it is characterised in that：Applicable temperature is covered
- 196 DEG C of ultralow temperature is to 300 DEG C of scopes of high temperature；The monitoring method is in the non-fracture area cloth of metal structure surface crack tip
A micron gate sensor is put, as measurement grid, parallel grid line is each perpendicular to crack initiation direction, in addition, in flawless region cloth
Identical micron gate sensor is put as reference grating, the resistance of grid is measured using Wheatstone bridge half bridge measurement method；With
The extension of crack of metal surface, the film-substrate of measurement grid ftractures with face crack, so as to cause micron grid line one by one
Fracture, due to the parallel relationship between grid line so that its all-in resistance in parallel is raised with the cracking of crackle, and then real time reaction crackle
Length and the situation of change to the time；
Described micron gate sensor making step is as follows：
A. film is respectively placed in absolute ethyl alcohol, acetone, isopropyl successively as substrate from 25 micron thickness Kaptons
Ultrasonic wave is fully cleaned in alcoholic solvent, then oven for drying；
B. using high speed sol evenning machine in one layer of NR9 1500PY negative photoresist of macromolecule membrane surface even spread, negative photo
Glue thickness control is at 1 micron, and 150 DEG C of temperature carry out front baking 60s on hot plate；
C. ultraviolet expose is carried out to the macromolecule membrane for being coated with negative photoresist using micron grid mask plate on ultraviolet exposure machine
Light, makes photo resist photosensitive so as to by the photoresist of mask plate pattern transfer to polymeric membrane surface, and to dry 90s after 100 DEG C,
With RD6 developing liquid developings, the fixing processing of deionized water；
D. Danton magnetically controlled sputter methods are used, on evaporation metal Cr layers to 100 of the macromolecule membrane surface by ultraviolet photolithographic
Nano thickness；
E. strip step, the photoresist of film surface is removed using acetone ultrasonic method, the figure of parallel grid line is formed on surface；
F. the electrode of micron gate sensor is drawn with the enamel-covered wire of 0.12mm diameters for accessing measuring circuit using elargol；
Described micron gate sensor is double-decker, and bottom is ultrathin flexible macromolecule substrate layer, and described substrate layer is one
Floor height molecular flexibility film, for supporting micron grid line layer, transmission load and being insulated with metal surface；Top layer is conductive micron
Use parallel way arranged in parallel between grid line layer, grid line, micron grid line layer thickness is nanoscale, grid line yardstick and grid line it
Between at intervals of micron order；This micron of gate sensor is adhered to by hard splicing agent and metal structure surface to be measured, in real time monitoring
The spread scenarios of metal structure surface crackle；The thickness of the micron grid line layer is 50~100 nanometers；Grid line yardstick and grid line it
Between at intervals of 10~100 microns；Macromolecule fexible film thickness is no more than 25 microns in substrate layer, can be with metal structure surface
Crackle ftracture together.
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| KR101708317B1 (en) * | 2015-06-17 | 2017-02-20 | 엘지전자 주식회사 | Strain inspection device and attaching method thereof |
| CN105004766A (en) * | 2015-07-07 | 2015-10-28 | 中冶建筑研究总院有限公司 | Method for monitoring fatigue crack of surface of engineering structure |
| CN105067439A (en) * | 2015-08-26 | 2015-11-18 | 中国特种设备检测研究院 | Crack tip strain field sensor and measuring method thereof |
| CN106896140B (en) * | 2015-12-17 | 2023-10-13 | 中国科学院金属研究所 | Low-temperature fatigue crack growth rate test device and application method thereof |
| CN106124566A (en) * | 2016-06-20 | 2016-11-16 | 南京航空航天大学 | The damage of rail joint clamping plate fatigue crack and extension on-line monitoring assembly and method of work thereof |
| JP6910803B2 (en) * | 2017-01-17 | 2021-07-28 | 住友重機械工業株式会社 | Excavator |
| CN109187857A (en) * | 2018-08-22 | 2019-01-11 | 中国飞机强度研究所 | A kind of crackle monitoring device and method based on silver powder coating sensor |
| CN110849942A (en) * | 2019-11-27 | 2020-02-28 | 中国人民解放军空军工程大学 | Grid type thin film sensor based on PVD and preparation method thereof |
| CN113552174A (en) * | 2021-08-20 | 2021-10-26 | 无锡风电设计研究院有限公司 | Fan blade surface crack monitoring device and method and induction material coating method |
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| EP2163876A1 (en) * | 2008-05-27 | 2010-03-17 | BAE Systems PLC | Damage Sensors and Processing Arrangements Therefor |
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