CN110849942A - Grid type thin film sensor based on PVD and preparation method thereof - Google Patents
Grid type thin film sensor based on PVD and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a grid type film sensor based on PVD, wherein an array of the grid type film sensor covers the whole detection area and comprises two conducting rods, a plurality of conducting grid channels which are connected in parallel are arranged between the two conducting rods, and the tail part of one conducting rod is connected with a temperature compensation channel; the conductive rod, the conductive grid channel and the temperature compensation channel are all the same in structure and are all film sensors with layered structures. The sensor can obviously enhance the stability of the sensing element by reducing the welding points of the sensing element and the conducting wire. Also provided is a method for preparing the sensor, comprising the steps of 1: preparing an insulating layer; step 2: preparing a sensing layer; and step 3: and preparing a protective layer.
Description
Technical Field
The invention belongs to the technical field of structural health monitoring, and particularly relates to a PVD (physical vapor deposition) -based grid type thin film sensor and a preparation method of the PVD-based grid type thin film sensor.
Background
In 1979, NASA initiated an intelligent skin program, Claus et al, virginia institute of technology and state university, to embed fiber optic sensors in carbon fiber reinforced composite skins for the first time, which was the first attempt in the world on structural health monitoring systems, referred to as fiber optic smart structures and skins. In 1995, the white House science and policy office and the national Key technology review group listed intelligent materials and structural technologies in the "national Key technology report". In 1997, the intelligent architecture was listed as one of the six strategic research tasks of the "basic research program".
In the aviation field, a great deal of manpower, material resources and financial resources are invested in research application of the structural health monitoring technology in the United states and the military and government departments of the European Union. For example, the national aeronautics and astronautics administration (NASA) "Integrated vehicle Management" program, the Air Force Research Laboratory (AFRL) SHM development program, the development of the rockschid martin aircraft F35 aircraft fault prediction and Health Management system (PHM) and the development of the boeing Aircraft Health Management (AHM) system actively promote the development of the structural Health monitoring technology.
In China, health monitoring technology starts relatively late, and health monitoring research at the present stage mainly focuses on fault diagnosis of mechanical equipment (especially special equipment) and monitoring of structural damage conditions of civil engineering buildings (mainly bridges) in traditional mechanical disciplines. In the aviation field, the basis for carrying out relevant research on health monitoring is weaker. Although, in recent years, the monitoring technology of the national aircraft structure health is rapidly developing with the support of national science foundation, climbing plan, aviation science foundation and civil aircraft-related scientific research projects. At present, the strain monitoring technology of an optical fiber sensor, the damage monitoring technology of a piezoelectric sensor and the flexible eddy current crack monitoring technology are mainly developed in China, and in addition, the application research based on acoustic emission damage monitoring is greatly popularized in the ground strength test of an airplane structure. However, the distance is still a long way to go for civil and military use.
A metal structure fatigue damage monitoring sensing element based on PVD and application thereof (201410413313.X, published: 2014.08.21) provide a simple design concept of the metal structure fatigue damage monitoring sensing element based on PVD and a preparation method thereof, and verify good bonding performance and high durability of the sensing element and a metal structure substrate. However, the sensor has several significant defects, which limit the large-scale application of the sensor, and the main defects are as follows: firstly, a method of connecting a plurality of conductive strips in series is adopted for realizing quantitative monitoring, so that monitoring channels are too many, and large-range and multi-target monitoring is difficult to realize; secondly, because the two ends of each conductive bar are connected with the acquisition card through welding wires to transmit information, the phenomenon that the acquired information is deviated due to the disconnection of welding points is easy to occur due to excessive welding points; thirdly, the sensor is made of copper, chromium and other metals, the resistance value is greatly influenced by temperature, the influence of the external temperature on the sensor is not considered in the existing design, and the temperature drift problem is not solved, so that the sensor is difficult to use in a high-temperature environment.
After the monitoring channels are reduced, the sensing element can be used for realizing large-range and multi-target monitoring, so that the application prospect of the sensing element can be greatly improved. Meanwhile, the stability of the sensing element can be obviously enhanced by reducing the welding points of the sensing element and the conducting wire, the down time of periodic detection and maintenance caused by the failure of the sensing element is reduced, and the maintenance and guarantee cost is reduced. In addition, after the temperature compensation channel is added, the influence of the external temperature on the sensor can be greatly reduced, and the stability and the application range of the sensor are enhanced.
Disclosure of Invention
The invention aims to provide a PVD (physical vapor deposition) -based grid type thin film sensor, which greatly reduces the number of monitoring channels and the number of welding points, can be used for realizing large-range and multi-target monitoring after the monitoring channels are reduced, and can obviously enhance the stability of the sensor by reducing the welding points between the sensor and a lead.
The second purpose of the invention is to provide a preparation method of the grid type thin film sensor based on PVD.
The technical scheme adopted by the invention is that a grid type film sensor based on PVD (physical vapor deposition), wherein a grid type film sensor array covers the whole detection area and comprises two conductive rods, a plurality of conductive grid channels connected in parallel are arranged between the two conductive rods, and the tail part of one conductive rod is connected with a temperature compensation channel;
the structures of the conductive rod, the conductive grid channel and the temperature compensation channel are the same and are all layered structures formed by multiple layers of functional gradient materials.
The present invention is also characterized in that,
the layered structure formed by the multilayer functionally gradient material is specifically as follows: the three-layer structure of the protective layer, the sensing layer and the insulating layer is sequentially arranged from top to bottom, and the thicknesses of the protective layer, the sensing layer and the insulating layer are all in the micron order.
The layered structure formed by the multilayer functionally gradient material is specifically as follows: the structure comprises a protective layer and a sensing layer from top to bottom, and the thicknesses of the protective layer and the sensing layer are both in micron order.
The protective layer is an N-90-A insulating paint layer, a K-705RTV silicon rubber layer or an AlN insulating film layer.
The sensing layer is a metal layer, a metal alloy layer or a metal compound conductive film layer, and the thickness of the sensing layer is 2-8 mu m.
The insulating layer is Al2O3Insulating layer, SiO2An insulating layer or an AlN insulating thin film layer.
The second technical scheme adopted by the invention is that the preparation method of the grid type thin film sensor based on PVD comprises the following steps:
step 1: preparing an insulating layer
If the substrate is an insulator, an insulating layer is not required to be prepared on the surface of the substrate, the surface of the substrate is regarded as having the insulating layer, and the substrate is directly cleaned and dried; if the substrate is a non-insulator, the surface of the substrate needs to be subjected to insulation treatment to prepare an insulating layer on the surface of the substrate, and then the substrate covered with the insulating layer is cleaned and dried; the purpose of cleaning is as follows: to remove surface oil stains and pollutants which are not beneficial to the preparation of the sensing layer;
step 2: preparation of the sensing layer
Depositing a metal layer, a metal alloy layer or a metal compound conductive film layer with the thickness of 2-8 mu m on the insulating layer by utilizing an ion plating technology, and specifically processing steps are as follows:
step 2.1: the corresponding grille-shaped film sensor covering plate with the hollow structure is designed and manufactured according to the distribution and destruction form of dangerous parts of a matrix, the grille-shaped film sensor covering plate comprises a conductive grille channel covering plate and a conductive rod covering plate, and the conductive grille channel covering plate and the conductive rod covering plate are manufactured respectively and specifically: the conductive grid channel masking plate is provided with a hollow design matched with the conductive grid channel, and the conductive rod masking plate is provided with a hollow design matched with the conductive rod and the temperature compensation channel;
step 2.2: sequentially clamping and configuring a conductive grid channel masking plate, a base body covered with an insulating layer and a shielding bottom plate, and depositing a sensing layer on the insulating layer part at the position of the conductive grid channel leaked from the conductive grid channel masking plate;
step 2.3: sequentially clamping and configuring a conductive rod masking plate, the semi-finished product obtained in the step 2.2 and a shielding bottom plate, and depositing a sensing layer on the conductive rod which leaks from the conductive rod masking plate and the insulating layer part at the temperature compensation channel;
and step 3: preparation of the protective layer
And preparing an N-90-A insulating paint layer and a K-705RTV silicon rubber layer on the sensing layer, or depositing an AlN thin film layer by using an ion plating technology to obtain the sensor.
The present invention is also characterized in that,
the method for depositing the sensing layer on the insulating layer leaked from the conductive grid channel masking plate or the conductive rod masking plate in the step 2.2 and the step 2.3 is the same, and specifically comprises the following steps:
s1: sealing the working surface of the grid-shaped film sensor to be prepared into an arc evaporation source into a vacuum chamber of an ion plating machine, and vacuumizing to less than 0.008 Pa;
s2: introducing argon gas to keep the vacuum degree of the working chamber at 0.5 Pa-1 Pa, applying negative bias voltage 200V to the matrix, and performing ion bombardment cleaning for 10 min;
s3: adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current variation range of the arc light evaporation source is 60-80A, and the negative bias of the substrate is kept at 100-180V;
s4: and (3) intermittently depositing a conductive film of a sensing layer of the grid-shaped film sensor, turning off an arc power supply when the temperature of a vacuum chamber of the ion plating machine is higher than 250 ℃, turning on the arc power supply when the temperature is cooled to be lower than 80 ℃, and continuing to deposit, wherein the accumulated deposition time is 20-80 min.
The invention has the beneficial effects that:
firstly, the parallel array is innovatively used, the number of monitoring channels and the number of welding points are greatly reduced, and the sensor can be used for realizing large-range and multi-target monitoring after the monitoring channels are reduced, so that the application prospect of the sensor is bright; secondly, the stability of the sensor can be obviously enhanced by reducing welding points between the sensor and a lead, the down time of periodic detection and maintenance caused by sensor faults is reduced, and the maintenance guarantee cost is reduced; thirdly, the design of the temperature compensation channel in the sensor array can obviously reduce the influence of the external temperature on the sensor, and enhance the stability and the application range of the sensor.
Drawings
FIG. 1 is a schematic structural diagram of a PVD-based grid-type thin film sensor according to the present invention;
FIG. 2 is a schematic view of the principle of monitoring fatigue cracks;
FIG. 3 is a schematic view of a layered structure of a thin film sensor according to the present invention;
FIG. 4 is a schematic structural view of a collector bar mask used in the manufacturing method of the present invention;
FIG. 5 is a schematic diagram of the structure of a conductive grid channel mask used in the manufacturing method of the present invention;
FIG. 6 is a sample of a paper sheet of example 1 with a surface coated with a grating-type thin film sensor;
fig. 7 is a graph showing monitoring data of the grid-type thin film sensor in the preliminary experiment of example 1.
In the figure, 1 is a conductive grid channel, 2 is a conductive rod, 3 is a temperature compensation channel, 4 is a protective layer, 5 is an insulating layer, 6 is a substrate, 7 is a sensing layer, 8 is a welding point A, 9 is a welding point B, 10 is a welding point C, 11 is a crack.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a grid type film sensor based on PVD (physical vapor deposition), which comprises two conducting rods 2, wherein a plurality of conducting grid channels 1 connected in parallel are arranged between the two conducting rods 2, and the tail part of one conducting rod 2 is connected with a temperature compensation channel 3, as shown in figures 1 and 3.
The composition of the grid-type thin film sensor is described below, as shown in fig. 3, the structures of the conductive rod 2, the conductive grid channel 1 and the temperature compensation channel 3 are the same and are all composed of multiple layers of functionally graded material layers, and the grid-type thin film sensor is composed of two or three layers of functionally graded materials from bottom to top;
when the substrate is a non-insulator, the grid type thin film sensor is of a three-layer layered structure, which is respectively as follows: the bottom layer is an insulating layer 5 prepared from an insulating support material, the middle layer is a sensing layer 7 prepared from a conductive sensing material, and the top layer is a protective layer 4 prepared from a packaging protective material; the thickness of each layer is in micron order, and the thickness of the sensing layer 2 is preferably 2-8 μm. The insulating layer 5 is Al2O3Insulating layer, SiO2The sensor comprises an insulating layer or an AlN insulating film layer, a sensing layer 7 is a metal layer, a metal alloy layer or a metal compound conducting film layer, and a protective layer 4 is an N-90-A insulating paint layer, a K-705RTV silicon rubber layer or an AlN insulating film layer. The protective layer 4 mainly serves to protect the grating-type thin film sensor, especially the sensing layer 7, and to insulate and insulate as required, and the thickness of the protective layer 7 is not limited to be too strict and can be determined according to actual requirements. In addition, the insulating layer 5 is formed on the surface of the structural substrate and is in an integrated structure with the structural substrate; the sensing layer 7 is in the form of a grid as shown in fig. 1.
When the substrate is an insulator, the grid type film sensor is of a two-layer laminated structure: the passivation layer 4 and the sensing layer 7 are sequentially arranged from top to bottom.
The formed grid type thin film sensor array covers the whole monitoring area (namely a fatigue dangerous part of a matrix), when a crack 11 is generated in a structure, a conductive grid channel of the grid type thin film sensor array integrated with the structure is sequentially broken, the output resistance of the sensor is changed, and therefore the purpose of real-time monitoring is achieved, and the fatigue crack monitoring principle is shown in figure 2.
The invention also provides a preparation method of the grid type thin film sensor based on PVD, which comprises the following steps:
step 1: preparing an insulating layer
If the substrate 6 is an insulator, the surface of the substrate is not required to be provided with the insulating layer 5, the surface of the substrate 6 is regarded as being provided with the insulating layer 5, and the substrate 6 is directly cleaned and dried; if the substrate 6 is a non-insulator (metal structure), the insulating layer 5 is prepared on the surface of the substrate 6 by insulation treatment, and then the substrate 6 covered with the insulating layer 5 is cleaned and dried; the purpose of cleaning is as follows: to remove surface oil stains and contaminants that are not conducive to the preparation of the sensing layer 7;
in general, for the aluminum alloy substrate, the conventional sulfuric acid anodizing process is adopted to prepare Al with the thickness of 10-25 um on the surface of the substrate2O3The insulating layer can also adopt an ion plating technology to deposit an AiN insulating film on the surface of the substrate; for the base bodies such as steel base, titanium base and the like which can not adopt the sulfuric acid anodic oxidation process, the phosphating process can be adopted to prepare a phosphating film on the surface of the base body or the plasma enhanced chemical vapor deposition (PEVCD) technology is adopted to deposit SiO on the surface of the base body2An insulating layer.
Step 2: preparation of the sensing layer
Depositing a metal layer, a metal alloy layer or a metal compound conductive film layer with the thickness of 2-8 mu m on the insulating layer 5 by utilizing an ion plating technology, and specifically processing steps are as follows:
step 2.1: the corresponding grid-shaped film sensor covering plate with the hollow structure is designed and manufactured according to the distribution and destruction form of dangerous parts of the matrix (the hollow part is used for controlling the shape of the conductive sensing layer), the grid-shaped film sensor covering plate comprises a conductive grid channel covering plate and a conductive rod covering plate, and the conductive grid channel covering plate and the conductive rod covering plate are respectively manufactured and specifically are as follows: the conductive grid channel masking plate is provided with a hollow design matched with the conductive grid channel 1, and the conductive rod masking plate is provided with a hollow design matched with the conductive rod 2 and the temperature compensation channel 3;
step 2.2: sequentially clamping and configuring a conductive grid channel masking plate, a base body 6 covered with an insulating layer 5 and a shielding bottom plate, and depositing a sensing layer 7 on the insulating layer 5 at the position of the conductive grid channel 1 leaked from the conductive grid channel masking plate;
step 2.3: sequentially clamping and configuring a conductive rod masking plate, the semi-finished product obtained in the step 2.2 and a shielding bottom plate, and depositing a sensing layer 7 on the conductive rod 2 leaked from the conductive rod masking plate and the insulating layer 5 at the temperature compensation channel 3;
and step 3: preparation of the protective layer
And preparing an N-90-A insulating paint layer and a K-705RTV silicon rubber layer on the sensing layer, or depositing an AlN thin film layer by using an ion plating technology to obtain the sensor.
The method for depositing the sensing layer 7 on the insulating layer 5 leaked from the conductive grid channel masking plate or the conductive rod masking plate in the step 2.2 and the step 2.3 is the same, and specifically comprises the following steps:
s1: sealing the working surface of the grid-shaped film sensor to be prepared into an arc evaporation source into a vacuum chamber of an ion plating machine, and vacuumizing to less than 0.008 Pa;
s2: introducing argon gas to keep the vacuum degree of the working chamber at 0.5 Pa-1 Pa, applying negative bias voltage 200V to the matrix (6), and performing ion bombardment cleaning for 10 min;
s3: adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current variation range of the arc light evaporation source is 60-80A, and the negative bias of the substrate 1 is kept at 100-180V;
s4: and (3) intermittently depositing the conductive film of the sensing layer 7 of the grid-shaped film sensor, turning off an arc power supply when the temperature of a vacuum chamber of the ion plating machine is higher than 250 ℃, turning on the arc power supply when the temperature is cooled to be lower than 80 ℃, and continuing to deposit, wherein the accumulated deposition time is 20-80 min.
The number and width of the conductive grid channels can be optimally designed according to actual monitoring requirements such as precision and range required by monitoring.
A preferable scheme is provided, the width of each conductive grid channel 1 is equal to the monitoring precision, and the distance between every two adjacent conductive grid channels 1 is equal to the monitoring precision. For example, if the monitoring accuracy is required to be 1mm, the width of a single conductive grid channel 1 is designed to be 1mm, and the distance between adjacent conductive grid channels 1 is also designed to be 1 mm. By adopting the design scheme, when the crack length is expanded to 1mm or increased by 1mm, the corresponding sensor cracks or the sensor channel is interrupted, and the change of the monitoring signal is very obvious at the moment.
The resistance value of the temperature compensation channel 3 can be optimally designed according to the actual monitoring requirement.
It is preferable that the resistance of the grid type thin film sensor is equal to the resistance of the temperature compensation channel, i.e. the resistance between the solder points A8, B9 and a solder point A8, C10 is equal. Note Sn＝(RAB/RAC) X 100% is the output signal of the grating type film sensor, then SnThe initial value was 100%.
Example 1
The following describes the preparation method of the grating type thin film sensor in detail by taking a common paper sheet as an example.
Designing a grid type thin film sensor array: the monitoring precision is 1mm, and 1mm is equal to the monitoring to single electrically conductive grid passageway 1 width, and the distance between the electrically conductive grid passageway 1 of adjacent equals also equal design 1mm with the monitoring.
According to the design, a grid type thin film sensor array template shown in figures 4-5 is manufactured. It should be noted that, because a hollow-out conductive grid needs to be obtained, different forms of shielding plates, namely, a conductive grid channel mask plate (as shown in fig. 5) and a conductive rod mask plate (as shown in fig. 4), need to be disposed on the insulating layer of the test piece twice.
The preparation method of the grid type thin film sensor array comprises the following steps:
firstly, preparing an insulating layer
In the practice of the invention, paper sheets were selected for the pre-experiment, which themselves were insulators and therefore did not require the preparation of insulating layers.
Secondly, preparing a sensing layer
A copper conductive film with a thickness of 4 μm was deposited on the insulating layer 5 by ion plating.
The use method in the embodiment is as follows:
the conductive grating channel masking plate and the masking bottom plate of the grating type film sensor are clamped together with paper sheets, namely: the part of the mask that leaks out of the connection layer is used for depositing the conductive thin film sensing layer 7. The working surface of the grid-shaped film sensor is sealed in a vacuum chamber of an ion plating machine opposite to an arc evaporation source, and the vacuum chamber is vacuumized to be less than 0.008 Pa. Opening an argon bottle, introducing argon gas, keeping the vacuum degree of the working chamber at 0.5 Pa-1 Pa, applying negative bias voltage 200V to the matrix, and performing ion bombardment cleaning for 10min to remove impurities on the surface of the paper sheet. Adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current of the arc evaporation source is 60A, and the negative bias voltage of the substrate is kept at 100V. The conductive film of the sensing layer of the grid-shaped film sensor is deposited intermittently, when the temperature of a vacuum chamber of an ion plating machine is higher than 250 ℃, an arc power supply is turned off, when the temperature is cooled to be lower than 80 ℃, the arc power supply is turned on, deposition is continued, and the accumulated deposition time is 20 min.
Then, the paper sheet with the prepared conductive grid channels is taken out, and the conductive rods are prepared by using the conductive rod masking plate in the same way as above. Finally, a paper sample with a surface coated with a grid-type thin film sensor is obtained, as shown in fig. 6.
Thirdly, preparing a protective layer
In order to prevent the conductive material of the sensing layer 7 from being oxidized and damaged by external action, a non-conductive packaging protective material, specifically N-90-a insulating paint, for sealing the sensing layer is prepared on the sensing layer 7.
Thus, a substrate prepared with a grid-type thin film sensor was obtained.
Examples of applications are:
the following will describe in detail embodiments of the present invention with reference to the drawings by taking a paper sample as an example.
The specific experimental method is as follows:
the feasibility of the sensor array was preliminarily verified by conducting preliminary experiments with a grid-type thin film sensor plated on the surface of a paper coupon, using scissors to slowly cut the conductive grid to simulate crack propagation.
After each grid channel is broken, the resistance value between the welding points A, B and A, C of the grid type film sensor array (namely the resistance value of the conductive grid and the resistance value of the temperature compensation channel) is recorded by using a VICTOR86B digital multi-meter, and the output signal S of the grid type film sensor is analyzednThe change of the grating type thin film sensor array can realize feasibility verification and sensitivity research on the crack monitoring of the grating type thin film sensor array.
This example illustrates the monitoring results of paper samples pre-experiments with grating-type thin-film sensors coated on the surface:
output signal S of grid-shaped thin film sensor in paper sheet sample pre-test coated with grid-shaped thin film sensor array on surfacenThe variation is as shown in fig. 7. In the figure, the abscissa corresponds to the crack length, and the ordinate corresponds to the output signal of the grid-like thin-film sensor, and the change trend of the monitoring signal is analyzed and explained.
The curve of the sensor output signal as a function of crack length is shown in fig. 7. It can be seen from the figure that when the crack does not extend to the conductive grid sensor, the output signal of the sensor fluctuates but remains in a small range, when the crack length reaches the length that the crack extends to the front end of the 1 st grid channel and does not pass through, the output signal does not change significantly and remains at 100%, when the crack completely passes through the 1 st grid channel of the conductive grid sensor, the output signal of the sensor increases significantly to 101.36%, at this time, the 1 st monitoring channel is completely broken, and the crack length is 1 mm. The resistance jump is due to the fact that the crack causes the corresponding 1 st grid channel to be disconnected and not conduct electricity, so that the resistance of the sensor is increased. The sensor resistance stabilizes again as the fatigue crack passes through the 1 st grid channel. When the crack propagates to the front end of the No. 2 grid channel and does not pass through, the output signal is not changed obviously and is kept at 101.36%, and when the crack completely passes through the No. 2 grid channel of the conductive grid sensor, the output signal of the sensor is increased obviously and reaches 103.47%. The monitoring conditions of the 3 rd and 4 th grating channels are the same as those of the 1 st and 2 nd grating channels, when a crack extends to the front end of the grating channel and does not pass through, the output signal is not obviously changed, and when the crack completely passes through the grating channel, the output signal of the sensor is obviously increased to 109.52 percent and 133.42 percent respectively. And when the crack passes through the 5 th grid channel, the output signal is increased in a jumping way. Through the test result, the crack propagation passing through the corresponding grating channel can be estimated, so that the quantitative monitoring of the fatigue crack is realized. The fatigue crack on-line monitoring test shows that the grid type film sensor has the capability of on-line quantitative monitoring of the fatigue crack; meanwhile, the temperature compensation channel is considered in the calculation mode of the output signal of the sensor, so that the adverse effect of the external temperature on the output signal of the sensor can be effectively restrained.
The results show that the monitoring method of the PVD-based grid type thin film sensor can effectively monitor the structural cracks.
Example 2
Example 2 is the same as example 1 except for the following parameters:
when the sensing layer is prepared, (1) a copper conductive film with the thickness of 8 microns is deposited on the insulating layer 5 by utilizing an ion plating technology; (2) adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current of the arc evaporation source is 70A, and the negative bias voltage of the matrix is kept at 180V; (3) the cumulative deposition time was 60 min.
The protective layer prepared was 705 silica gel film.
When cracks are generated on the surface of the paper sheet, the thin film sensor is synchronously damaged, so that the output signal of the sensing layer is changed, and the purpose of crack monitoring is achieved.
Example 3
Example 3 the same as example 1 except for the following parameters:
when the sensing layer is prepared, (1) a copper conductive film with the thickness of 2 microns is deposited on the insulating layer 5 by utilizing an ion plating technology; (2) adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current of the arc evaporation source is 80A, and the negative bias voltage of the matrix is kept at 150V; (3) the cumulative deposition time was 80 min.
The prepared protective layer is an AlN thin film deposited by utilizing an ion plating technology.
Process parameters for preparing AIN film
When cracks are generated on the surface of the paper sheet, the thin film sensor is synchronously damaged, so that the output signal of the sensing layer is changed, and the purpose of crack monitoring is achieved.
When the substrate is of a metal structure, in order to realize normal use of the sensor, different surface technologies are required to be adopted for insulation treatment of different metal substrates, for example, the aluminum alloy can be subjected to anodic oxidation treatment, and the titanium alloy can be subjected to SiO plating by using a PECVD (plasma enhanced chemical vapor deposition) technology2An insulating film. And when the surface film and the matrix realize structural integration and the thickness of the film layer is controlled in a proper range, and fatigue cracks are initiated on the surface of the structural matrix or near the surface of the structural matrix and gradually expand, the film can be synchronously damaged along with the structural matrix. Therefore, the metal substrate and the insulating layer can be regarded as a whole, when cracks are generated on the surface of the metal substrate, the insulating layer is damaged synchronously with the cracks, and then output signals of the sensing layer are changed, so that the purpose of crack monitoring is achieved.
The invention has the advantages that:
in the design of the grid type thin film sensor array sensing layer, the potential method monitoring principle is innovatively applied, the traditional series circuit is changed, the parallel circuit is adopted, the number of monitoring channels and the number of welding points are greatly reduced, and the large-range and multi-target monitoring capability of the sensor is obviously enhanced. And secondly, the design of adding a temperature compensation channel in the grid type thin film sensor array greatly reduces the influence of the external temperature on the sensor, and obviously enhances the stability and the application range of the sensor. Finally, the output signals of the sensors are processed, and the output signals are not simple resistance values or voltage values but change rates of the resistance values or the voltage values, so that the output signals have general commonality, and design and development of a sensor monitoring system at a later stage are facilitated.
Claims (8)
1. A grid type film sensor based on PVD is characterized in that a grid type film sensor array covers the whole detection area and comprises two conducting rods (2), a plurality of conducting grid channels (1) which are connected in parallel are arranged between the two conducting rods (2), and the tail part of one conducting rod (2) is connected with a temperature compensation channel (3);
the conductive rod (2), the conductive grid channel (1) and the temperature compensation channel (3) are all the same in structure and are all of a layered structure formed by multiple layers of functional gradient materials.
2. The PVD-based grid-type thin-film sensor as recited in claim 1, wherein the layered structure of the plurality of functionally graded materials is specifically: the three-layer structure of the protective layer (4), the sensing layer (7) and the insulating layer (5) is sequentially arranged from top to bottom, and the thicknesses of the protective layer (4), the sensing layer (7) and the insulating layer (5) are all in a micron level.
3. The PVD-based grid-type thin-film sensor as recited in claim 1, wherein the layered structure of the plurality of functionally graded materials is specifically: the two-layer structure of protective layer (4) and sensing layer (7) from top to bottom is in proper order, the thickness of protective layer (4), sensing layer (7) all is at the micron order.
4. A PVD based grid-type thin film sensor according to claim 2 or 3, characterized in that the protective layer (4) is a N-90-a insulating paint layer, a K-705RTV silicone rubber layer or an AlN insulating thin film layer.
5. A PVD based grid-type thin film sensor according to claim 2 or 3, wherein the sensing layer (7) is a metal layer, a metal alloy layer or a metal compound conductive thin film layer, and the thickness of the sensing layer (7) is 2 μm to 8 μm.
6. PVD-based grid-type thin-film sensor according to claim 2, characterized in that the insulating layer (5) is Al2O3Insulating layer, SiO2An insulating layer or an AlN insulating thin film layer.
7. The preparation method for preparing the PVD-based grid type thin film sensor as claimed in any of the claims 1 to 6, comprising the following steps:
step 1: preparing an insulating layer
If the substrate (6) is an insulator, the surface of the substrate does not need to be provided with the insulating layer (5), the surface of the substrate (6) is regarded as already provided with the insulating layer (5), and the substrate (6) is directly cleaned and dried; if the substrate (6) is a non-insulator, the surface of the substrate (6) needs to be subjected to insulation treatment to prepare an insulating layer (5) on the surface, and then the substrate (6) covered with the insulating layer (5) is cleaned and dried; the purpose of cleaning is as follows: so as to remove surface oil stains and pollutants which are not beneficial to the preparation of the sensing layer (7);
step 2: preparation of the sensing layer
Depositing a metal layer, a metal alloy layer or a metal compound conductive film layer with the thickness of 2-8 mu m on the insulating layer (5) by utilizing an ion plating technology, and specifically processing steps are as follows:
step 2.1: the corresponding grille-shaped film sensor covering plate with the hollow structure is designed and manufactured according to the distribution and destruction form of dangerous parts of a matrix, the grille-shaped film sensor covering plate comprises a conductive grille channel covering plate and a conductive rod covering plate, and the conductive grille channel covering plate and the conductive rod covering plate are manufactured respectively and specifically: the conductive grating channel masking plate is provided with a hollow design matched with the conductive grating channel (1), and the conductive rod masking plate is provided with a hollow design matched with the conductive rod (2) and the temperature compensation channel (3);
step 2.2: sequentially clamping and configuring a conductive grid channel masking plate, a base body (6) covered with an insulating layer (5) and a shielding bottom plate, and partially depositing a sensing layer (7) on the insulating layer (5) at the position of the conductive grid channel (1) leaked from the conductive grid channel masking plate;
step 2.3: sequentially clamping and configuring a conductive rod masking plate, the semi-finished product obtained in the step 2.2 and a shielding bottom plate, and partially depositing a sensing layer (7) on the conductive rod (2) leaked from the conductive rod masking plate and the insulating layer (5) at the temperature compensation channel (3);
and step 3: preparation of the protective layer
And preparing an N-90-A insulating paint layer and a K-705RTV silicon rubber layer on the sensing layer, or depositing an AlN thin film layer by using an ion plating technology to obtain the sensor.
8. The method for preparing a PVD-based grid-type thin-film sensor as claimed in claim 7, wherein the method for depositing the sensing layer (7) on the insulating layer (5) leaking from the conductive grid channel mask or the conductive bar mask in step 2.2 and step 2.3 is the same, specifically:
s1: sealing the working surface of the grid-shaped film sensor to be prepared into an arc evaporation source into a vacuum chamber of an ion plating machine, and vacuumizing to less than 0.008 Pa;
s2: introducing argon gas to keep the vacuum degree of the working chamber at 0.5 Pa-1 Pa, applying negative bias voltage 200V to the matrix (6), and performing ion bombardment cleaning for 10 min;
s3: adjusting the beam current and the negative bias of the arc evaporation source, wherein the specific parameters are as follows: the beam current variation range of the arc light evaporation source is 60-80A, and the negative bias of the substrate (1) is kept at 100-180V;
s4: and (3) intermittently depositing the conductive film of the sensing layer (7) of the grid-shaped film sensor, turning off an arc power supply when the temperature of the vacuum chamber of the ion plating machine is higher than 250 ℃, turning on the arc power supply when the temperature is cooled to be lower than 80 ℃, and continuing to deposit, wherein the accumulated deposition time is 20-80 min.
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