CN104568610A - Micrometer grid sensor for monitoring crack extension and crack extension monitoring method - Google Patents
Micrometer grid sensor for monitoring crack extension and crack extension monitoring method Download PDFInfo
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- CN104568610A CN104568610A CN201410818212.0A CN201410818212A CN104568610A CN 104568610 A CN104568610 A CN 104568610A CN 201410818212 A CN201410818212 A CN 201410818212A CN 104568610 A CN104568610 A CN 104568610A
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Abstract
The invention discloses a micrometer grid sensor for monitoring crack extension and a crack extension monitoring method, and relates to the field of the fracture toughness test of metal materials and the technical field of real-time monitoring of fatigue cracks. The micrometer grid sensor is of a two-layer structure, the bottom layer is an ultra thin flexible macromolecule substrate layer, the top layer is a conductive micrometer grid line layer, and grid lines are connected in parallel; the thickness of the grid line layer is formed into a nano level, the intervals between the dimension of the grid lines and the grid lines are formed into the micrometer level, the micrometer grid sensor is adhered to the surface of the metal structure to be monitored through a hard adhesive agent, and the extension condition of cracks on the surface of the metal structure is monitored in a real-time manner. The micrometer grid line structure is in direct contact with the surfaces of the cracks and is cracked with a crack device, and the method is the most direct method for monitoring the extension condition of the cracks; the applicable temperature covers from the ultra low temperature of minus 196 DEG C to the medium high temperature of 300 DEG C; space size requirements are not over, and the method can be suitable for the conditions that the monitoring method such as microscopes and the like cannot be suitable.
Description
Technical field
The present invention relates to Fracture of Metal Material toughness test field and fatigue crack real time monitoring field, be specially micron grid line sensor described in a kind of micron grid line Sensors & Application for metal material surface monitoring crack growth and carry out the method for monitoring crack growth and measurement, can be applicable to metal material quasistatic fracture toughness measure, the health monitoring of the typical metal structures such as aviation, automobile making, bridge and big machinery equipment.
Background technology
Micron grid line sensor is a kind of thin film sensor with micro-microstructure applied modern surperficial micro-processing technology and obtain, its advantage is to realize fine and closely woven grid line structure by micro-processing technologies such as uv-exposures, thus is adjusted arbitrarily between the two at raising sheet resistance and spatial resolution by adjustment moire grids density and width.With Crack Extension, grid line ruptures, and due to the parallel-connection structure between grid line, makes macro manifestations be the rising of resistance, and the grid line ratio proportional of the rate of change of resistance and fracture.Thus, this grid line structure can be utilized to carry out real-time monitored over time to the expansion of crackle.
Micron grid sensing unit can the cracking situation of reacting metal body structure surface crackle accurately in real time.This technology and at present conventional lossless detection method as: compared with acoustic emission, ultrasound wave, electromagnetism, there is unique advantage in on-line monitoring, it is with low cost, be easy to realize integrated design with metal construction, particular/special requirement is not had to environment for use, required supporting measurement can select the strain measuring instrument of the commercially available commercialization of arbitrary money, can greatly save measurement cost.
Summary of the invention
The technical problem to be solved in the present invention proposes a kind of micron gate sensor for metal structure surface monitoring crack growth and monitoring crack growth method, can realize the real-time measurement of Real-Time Monitoring to metal structure surface crack propagation process and crack length.
For solving the problems of the technologies described above, the technical scheme that the present invention takes is as follows.
For a micron gate sensor for metal structure surface monitoring crack growth, described micron gate sensor is double-decker, and bottom is ultrathin flexible macromolecule substrate layer, and top layer is the micron grid line layer of conduction, adopts parallel way arranged in parallel between grid line; Micron grid line layer thickness is nanoscale, is preferably 50 ~ 100 nanometers; Be spaced apart micron order between grid line yardstick and grid line, be preferably 10 ~ 100 microns; This micron of gate sensor is adhered to by hard splicing agent and metal structure surface to be measured, the spread scenarios of Real-Time Monitoring metal structure surface crackle; The physical dimension of described micron gate sensor, grid line yardstick and density can need adjust arbitrarily according to the spatial resolution of actual measurement and precision, the method improving spatial resolution is the density increasing grid line, putting forward high-precision method is reduce the width of grid line, and the physical dimension of micron gate sensor need cover the crack extending length of expection.
Described substrate layer is one deck macromolecule fexible film, be mainly used in supporting micron grid line layer, transmitted load and insulating with metal surface, in substrate layer, macromolecule fexible film thickness is generally no more than 25 microns, good crackle need be had to enclose cracking property, can ftracture with the crackle of metal structure surface.
Described micron grid line layer is the conductive layer that the one deck utilizing uv-exposure, plated film and lift-off technology to prepare on substrate layer surface has parallel gate line structure, and concrete treatment step is:
(1) macromolecule membrane substrate cleaning: be placed in absolute ethyl alcohol, acetone, isopropanol solvent Ultrasonic Cleaning successively respectively by film, then dry; Described macromolecule membrane can select Kapton, PET film, PVC film etc.
(2) use high speed sol evenning machine to be coated with one deck negative photoresist at macromolecule membrane surface uniform, negative photoresist THICKNESS CONTROL below 1 micron, and with proper temperature (100 DEG C ~ 150 DEG C) front baking;
(3) on ultraviolet exposure machine, use micron grid mask plate to carry out uv-exposure to the macromolecule membrane being coated with negative photoresist, by the Graphic transitions on mask plate to macromolecule membrane surface, and dry afterwards with proper temperature (about 100 DEG C), with developing liquid developing, the fixing process of deionized water;
(4) method of magnetron sputtering or electron beam evaporation deposition is adopted, at the conductive material of the macromolecule membrane surface evaporation high resistivity through uv-exposure photoetching, as Metal Cr, Ni etc., conductive material thickness is determined according to the demand to resistance, generally can be controlled in hundred nano-scale;
(5) peel off: adopt acetone or the liquid that removes photoresist (as HL203 etc.) to dissolve the photoresist on macromolecule membrane surface after plated film, make the figure of the parallel grid line of macromolecule membrane surface presentation.
Described micron grid mask plate is for designing according to actual needs, its physical dimension is fixed with crack length and trend, core to ensure that the fracture of every bar grid line all can bring consistent change in resistance, and its design process need consider the factor such as layout, grid line interval, grid line width of electrode.
A kind of expansion of the crack of metal surface based on described micron gate sensor monitoring method, this monitoring method arranges micron gate sensor at the non-fracture area of metal structure surface crack tip, as measurement grid, make parallel grid line all perpendicular to crack initiation direction, in addition, arrange that in flawless region identical micron gate sensor is as with reference to grid, adopts Wheatstone bridge half bridge measurement method to measure the resistance of grid.Arrange the object of reference grating be in and the thermonoise that produces in survey engineering of grid line.With the expansion of crack of metal surface, the film-substrate measuring grid ftractures with surface crack, thus cause the fracture one by one of micron grid line, due to the parallel relationship between grid line, its all-in resistance in parallel is raised with the cracking of crackle, and then the length of real time reaction crackle and the situation of change to the time.Crack length change calculates by resistance variations ratio.
Described Wheatstone bridge, can select full-bridge strain gauge means commercial at present arbitrarily to measure.Measurement result only needs the dimensionless proportionate relationship of measurement data and primary data, therefore to measurement result unit without explicitly calling for.
The invention has the advantages that:
1, micron grid line structure directly contacts crack surfaces, and with crackle instrument cracking, is the most direct method of monitoring crack spread scenarios;
2, Applicable temperature covers ultralow temperature-196 DEG C to middle high temperature 300 DEG C of scopes, under ultralow temperature, especially have unique applicability advantage;
3, without too much space scale requirement, can be used for the situation that the monitoring methods such as microscope can not be suitable for;
4, with low cost.
Accompanying drawing explanation
Fig. 1 is micron gate sensor structural representation;
Fig. 2 is micron gate sensor Making programme schematic diagram;
Fig. 3 is the schematic diagram carrying out crack initiation measurement on compact tensile specimen surface;
Fig. 4 is micron grid access Wheatstone bridge half bridge measurement circuit diagram;
Fig. 5 is the Monitoring Data of micron gate sensor and the correlation data of crack length.
Embodiment
Below for the compact tensile specimen structure of metal material quasistatic fracture toughness test, by reference to the accompanying drawings the present invention is elaborated.
Compact tensile specimen is at the prefabricated crackle of fatigue tester, and fatigue crack is by along the Directional Extension vertical with tensile axis.Prefabricating fatigue crack extends to the crack length of fracture can not more than 20mm, and the total length therefore designing grid line arranged in parallel controls at 20mm.Design and produce the mask plate figure of micron gate sensor as shown in Figure 1.Every bar grid line length 10mm, the moire grids density be evenly arranged is 50lines/mm.
Make micron gate sensor, steps flow chart is as follows:
A. select 25 micron thickness Kaptons as substrate, film is placed in successively respectively absolute ethyl alcohol, acetone, isopropanol solvent ultrasound wave fully clean, then oven for drying;
B. use high speed sol evenning machine to be coated with one deck NR91500PY negative photoresist at macromolecule membrane surface uniform, negative photoresist is thick to be controlled at 1 micron, and 150 DEG C of temperature carry out front baking 60s on hot plate;
C. on ultraviolet exposure machine, use micron grid mask plate to carry out uv-exposure to the macromolecule membrane being coated with negative photoresist, make photoresist photosensitive thus by mask plate Graphic transitions on the photoresist on polymeric membrane surface, and 90s is dried after 100 DEG C, with RD6 developing liquid developing, the fixing process of deionized water;
D. Danton magnetically controlled sputter method is adopted, at the macromolecule membrane surface evaporation metal Cr layer through ultraviolet photolithographic to about 100 nano thickness;
E. strip step, namely adopts acetone ultrasonic method to remove the photoresist of film surface, forms the figure of parallel grid line on surface;
F. use elargol to be drawn by the enameled wire of the electrode 0.12mm diameter of micron gate sensor to be used for accessing metering circuit.
By the micron gate sensor made according to using ECA instant drying adhesive as shown in Figure 3 or quick-drying bicomponent epoxy resin is gluing invests the non-extended area of crack tip.After glue thoroughly solidifies, by the testing resistance terminals of micron gate sensor lead-in wire access Wheatstone bridge; Equally, the reference edge of the micron gate sensor access electric bridge one prepared by the same way.As shown in Figure 4.
The compact tensile specimen having adhered to micron gate sensor is installed on QBG-200 type testing machine, applies preloading not higher than 100N.Record now initial resistivity value.In the spread scenarios of compact tensile specimen without the opposite side use crackle microscope for observing real-time monitored crackle of micron gate sensor, for contrasting with the reference of micron gate sensor measurement result.
Continue imposed load, Real-Time Monitoring measures the change in resistance of gate sensor simultaneously.Along with the applying of load, crack initiation, macromolecule membrane substrate ftractures thereupon, and the grid line at the substrate place of cracking disconnects, thus causes the change of resistance.As Fig. 5, each significantly resistance of micron gate sensor has risen the pop-in expansion process of a crackle all corresponding.The real time length of crackle is determined by the ratio relation of the resistance measured in initial resistance and crack initiation process.
Claims (8)
1. the micron gate sensor for monitoring crack growth, it is characterized in that: described micron gate sensor is double-decker, bottom is ultrathin flexible macromolecule substrate layer, described substrate layer is one deck macromolecule fexible film, for supporting a micron grid line layer, transmitted load and insulating with metal surface; Top layer is the micron grid line layer of conduction, and adopt parallel way arranged in parallel between grid line, micron grid line layer thickness is nanoscale, is spaced apart micron order between grid line yardstick and grid line; This micron of gate sensor is adhered to by hard splicing agent and metal structure surface to be measured, the spread scenarios of Real-Time Monitoring metal structure surface crackle.
2. a kind of micron gate sensor for monitoring crack growth according to claim 1, is characterized in that: the thickness of described micron grid line layer is 50 ~ 100 nanometers.
3. a kind of micron gate sensor for monitoring crack growth according to claim 1, is characterized in that: be spaced apart 10 ~ 100 microns between grid line yardstick and grid line.
4. a kind of micron gate sensor for monitoring crack growth according to claim 1, is characterized in that: in substrate layer, macromolecule fexible film thickness is no more than 25 microns, can ftracture with the crackle of metal structure surface.
5. a kind of micron gate sensor for monitoring crack growth according to claim 1, it is characterized in that: described micron grid line layer is the conductive layer that the one deck utilizing uv-exposure, plated film and lift-off technology to prepare on substrate layer surface has parallel gate line structure, and concrete preparation process is:
(1) macromolecule membrane substrate cleaning: be placed in absolute ethyl alcohol, acetone, isopropanol solvent Ultrasonic Cleaning successively respectively by film, then dry;
(2) use high speed sol evenning machine to be coated with one deck negative photoresist at macromolecule membrane surface uniform, negative photoresist THICKNESS CONTROL below 1 micron, and heats front baking;
(3) on ultraviolet exposure machine, use micron grid mask plate to carry out uv-exposure to the macromolecule membrane being coated with negative photoresist, by the Graphic transitions on mask plate to macromolecule membrane surface, and dry after heating, with developing liquid developing, the fixing process of deionized water;
(4) method of magnetron sputtering or electron beam evaporation deposition is adopted, at the conductive material of the macromolecule membrane surface evaporation high resistivity through uv-exposure photoetching;
(5) peel off: adopt acetone or the liquid that removes photoresist to dissolve the photoresist on macromolecule membrane surface after plated film, make the figure of the parallel grid line of macromolecule membrane surface presentation.
6. a kind of micron gate sensor for monitoring crack growth according to claim 5, is characterized in that: the macromolecule membrane described in step (1) selects Kapton, PET film or PVC film.
7. a kind of micron gate sensor for monitoring crack growth according to claim 5, is characterized in that: conductive material described in step (4) selects Metal Cr or Ni, and conductive material thickness, according to the demand to resistance, controls at hundred nano-scale.
8. the expansion of the crack of metal surface based on a described micron gate sensor monitoring method, it is characterized in that: this monitoring method arranges micron gate sensor at the non-fracture area of metal structure surface crack tip, as measurement grid, make parallel grid line all perpendicular to crack initiation direction, in addition, arrange that in flawless region identical micron gate sensor is as with reference to grid, adopts Wheatstone bridge half bridge measurement method to measure the resistance of grid; With the expansion of crack of metal surface, the film-substrate measuring grid ftractures with surface crack, thus cause the fracture one by one of micron grid line, due to the parallel relationship between grid line, its all-in resistance in parallel is raised with the cracking of crackle, and then the length of real time reaction crackle and the situation of change to the time.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105004766A (en) * | 2015-07-07 | 2015-10-28 | 中冶建筑研究总院有限公司 | Method for monitoring fatigue crack of surface of engineering structure |
| CN105067439A (en) * | 2015-08-26 | 2015-11-18 | 中国特种设备检测研究院 | Crack tip strain field sensor and measuring method thereof |
| CN106124566A (en) * | 2016-06-20 | 2016-11-16 | 南京航空航天大学 | The damage of rail joint clamping plate fatigue crack and extension on-line monitoring assembly and method of work thereof |
| CN106896140A (en) * | 2015-12-17 | 2017-06-27 | 中国科学院金属研究所 | A kind of fatigue at low temperatures crack growth rate experimental rig and its application method |
| CN107750331A (en) * | 2015-06-17 | 2018-03-02 | Lg 电子株式会社 | Strain-Sensing device and its coupling method |
| CN108331065A (en) * | 2017-01-17 | 2018-07-27 | 住友重机械工业株式会社 | Excavator |
| CN109187857A (en) * | 2018-08-22 | 2019-01-11 | 中国飞机强度研究所 | A kind of crackle monitoring device and method based on silver powder coating sensor |
| CN110849942A (en) * | 2019-11-27 | 2020-02-28 | 中国人民解放军空军工程大学 | Grid type thin film sensor based on PVD and preparation method thereof |
| CN113552174A (en) * | 2021-08-20 | 2021-10-26 | 无锡风电设计研究院有限公司 | Fan blade surface crack monitoring device and method and induction material coating method |
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| CN109187857A (en) * | 2018-08-22 | 2019-01-11 | 中国飞机强度研究所 | A kind of crackle monitoring device and method based on silver powder coating sensor |
| CN110849942A (en) * | 2019-11-27 | 2020-02-28 | 中国人民解放军空军工程大学 | Grid type thin film sensor based on PVD and preparation method thereof |
| CN113552174A (en) * | 2021-08-20 | 2021-10-26 | 无锡风电设计研究院有限公司 | Fan blade surface crack monitoring device and method and induction material coating method |
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