CN104538466B - 一种具有透明电极的铟镓砷光电探测器 - Google Patents

一种具有透明电极的铟镓砷光电探测器 Download PDF

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CN104538466B
CN104538466B CN201410817679.3A CN201410817679A CN104538466B CN 104538466 B CN104538466 B CN 104538466B CN 201410817679 A CN201410817679 A CN 201410817679A CN 104538466 B CN104538466 B CN 104538466B
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胡双元
朱忻
帕勒布.巴特查亚
常瑞华
和田修
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SUZHOU MATRIX OPTICAL Co Ltd
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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Abstract

本发明公开了一种具有透明电极的InGaAs光电探测器，其中正面透明电极由石墨烯构成。石墨烯通过化学气相沉积转移法制备，置于InP帽层之上，作为环形正电极，取代传统的金属电极。石墨烯因其优越的透光性能，在相同光敏台面的情况下，可以大大提高器件的光谱响应度和耦合效率。

Description

一种具有透明电极的铟镓砷光电探测器
技术领域
本发明涉及光电探测器领域，特别涉及一种铟镓砷光电探测器。
背景技术
以光子作为传播载体的光纤通讯，在过去的几十年间得到了飞速发展。作为光纤通讯的重要组成部分，光电探测器对于光纤通讯至关重要，光电探测器的响应频率直接决定着光纤通讯的传输速率。光纤通讯的特征波长是1.31um和1.55um，而这恰好与In0.53Ga0.47As(以下以InGaAs替代In0.53Ga0.47As)材料的光谱响应曲线匹配。因此，基于InGaAs的PIN光电探测器成为了光纤通讯的首选。
为了获得更高的响应速率，InGaAs探测器要求有更小的光敏区面积，以减小器件的结电容，而光敏区面积的减小会导致器件的响应度下降，探测能力受到影响，因此，在设计InGaAs光电探测器结构时，应同时考虑这两方面的影响。对于选定的光敏区面积，传统器件一般采用蒸镀金属，制备环形金属电极。环形金属电极覆盖区域不能透光，因此，实际的受光区面积，小于P型半导体区域的面积，这将导致光电探测器的响应度降低。
石墨烯材料从被发现开始，迅速成为材料界的研究热点。这种二维单原子层的碳材料具有超高的导电性和导热性，极强的机械强度和气密性，在很宽的光谱范围内透光率超过97％，是天然的透明电极的极佳选择。
发明内容
本发明旨在提供一种具有透明电极的InGaAs光电探测器结构，用以解决现有InGaAs光电探测器因为使用不透光的金属作为正电极导致的光电探测率降低的问题。
为了解决上述技术问题，本发明的技术方案具体如下：
a)选用一N型掺杂InP衬底，在其上通过外延生长非掺杂InP缓冲层、本征InGaAs吸收层、P型掺杂InP帽层；
b)选用一表面有二氧化硅的硅衬底，在其上蒸镀一层金属镍(Ni)；
c)将b步骤中制备的衬底，放入化学气相沉积系统中，通入甲烷(CH4)和氢气(H2)，在氩气(Ar)气氛下高温裂解，生成石墨烯；
d)通过刻蚀掉金属镍，将石墨烯与硅衬底分离，然后转移至a步骤制备的外延片表面；
e)通过反应离子刻蚀(RIE)，制备环形石墨烯正电极；
f)通过湿法或干法刻蚀出光敏区台面，然后旋涂聚酰亚胺进行钝化；
g)蒸镀压焊区金属，然后表面蒸镀一层SiN膜，作为器件的减反射膜；
h)通过干法刻蚀掉压焊区的SiN，减薄衬底，蒸镀N型金属电极电极。
本发明以台面型器件结构为例，作为该发明方法的说明，但需注意，本发明同样适用于平面型器件结构。
本发明与传统的铟镓砷光电探测器相比，正电极采用透明的石墨烯材料。假设环形正电极的宽度为d um，P型台面的半径为R um，则采用透明电极后，受光区面积增加了π(R2-(R-d)2)um2，相应的，光电探测率也大大提高。对于InGaAs光电探测器来说，正电极必须有一定的宽度(导电性以及工艺精度的要求)，因此，当R越小，此种结构的效果就越明显。
附图说明
以下，结合附图来详细说明本发明的实施方案。需要说明的是，附图只是为了便于理解，并不是与实际结构等比例的。
附图中：1为N型掺杂InP衬底；2为非掺杂InP缓冲层；3为本征InGaAs吸收层；4为P型掺杂InP帽层；5为石墨烯；6为钝化层；7为压焊区金属；8为减反层；9为N型金属电极；101为硅衬底；102为二氧化硅；103为金属镍。
图1在N型掺杂InP衬底上，通过外延生长非掺杂InP缓冲层、本征InGaAs吸收层、P型掺杂InP帽层；
图2化学气相沉积方法制备石墨烯；
图3石墨烯转移至InGaAs光电探测器外延片表面；
图4刻蚀出环形石墨烯电极图形；
图5刻蚀出光敏区台面；
图6对台面进行钝化；
图7制备压焊区金属；
图8制备减反层；制备N型金属电极。
具体实施方式
实施例1：
首先，选用一N型掺杂的InP衬底，在其上通过外延生长非掺杂InP缓冲层(0.5μm)、本征InGaAs吸收层(1.5μm)、P型掺杂InP帽层(2e18,0.5μm)。
选用一表面有二氧化硅的硅衬底，在其上蒸镀300nm的金属镍，然后放置在化学气相沉积反应室内。加热到900℃，在氩气气氛下，通入甲烷和氢气，生成石墨烯。反应完成后，将生长有石墨烯的衬底片浸泡于三氯化铁(FeCl3)溶液中，刻蚀掉金属镍，使石墨烯与衬底分离。然后将石墨烯材料转移至InGaAs探测器外延片表面。
外延片表面旋涂光刻胶，曝光显影，然后通过反应离子刻蚀(RIE)通氧气刻蚀掉不需要的石墨烯，制备环形石墨烯电极。旋涂光刻胶，曝光显影，然后通过湿法刻蚀，腐蚀出光敏区台面图形。旋涂聚酰亚胺，通过光刻显影，去除光敏区上的聚酰亚胺，然后退火形成钝化层。再次匀胶光刻，蒸镀压焊区金属图形。然后用等离子体增强化学气相沉积(PECVD)方法制备一层氮化硅(SiN)减反层。最后减薄衬底至100μm，抛光，蒸镀N型金属电极。器件制备完成。

Claims (2)

1.一种具有透明电极的铟镓砷光电探测器，包括从下而上设置的背金属电极、N型InP衬底、非掺杂InP缓冲层、本征InGaAs吸收层、P型InP帽层、正电极和钝化层，其特征在于：所述正电极为透明电极，由石墨烯构成，通过化学气相沉积转移法制备；
首先，选用一N型掺杂的InP衬底，在其上通过外延生长非掺杂InP缓冲层、本征InGaAs吸收层、P型掺杂InP帽层；
选用一表面有二氧化硅的硅衬底，在其上蒸镀300nm的金属镍，然后放置在化学气相沉积反应室内；加热到900℃，在氩气气氛下，通入甲烷和氢气，生成石墨烯；反应完成后，将生长有石墨烯的衬底片浸泡于三氯化铁(FeCl3)溶液中，刻蚀掉金属镍，使石墨烯与衬底分离；然后将石墨烯材料转移至InGaAs探测器外延片表面；
外延片表面旋涂光刻胶，曝光显影，然后通过反应离子刻蚀(RIE)通氧气刻蚀掉不需要的石墨烯，制备环形石墨烯电极；旋涂光刻胶，曝光显影，然后通过湿法刻蚀，腐蚀出光敏区台面图形；旋涂聚酰亚胺，通过光刻显影，去除光敏区上的聚酰亚胺，然后退火形成钝化层。
2.如权利要求1所述的一种具有透明电极的铟镓砷光电探测器，其特征在于：所述的InGaAs光电探测器为台面型光电探测器或者平面型光电探测器。
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