CN104538271B - Comb line slow wave structure working on high-order pass band - Google Patents
Comb line slow wave structure working on high-order pass band Download PDFInfo
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- CN104538271B CN104538271B CN201410835073.2A CN201410835073A CN104538271B CN 104538271 B CN104538271 B CN 104538271B CN 201410835073 A CN201410835073 A CN 201410835073A CN 104538271 B CN104538271 B CN 104538271B
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- wave structure
- passband
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- slow
- mould
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
- H01J23/28—Interdigital slow-wave structures; Adjustment therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
- H01J25/42—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
- H01J25/46—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field the backward travelling wave being utilised
Abstract
The invention discloses a comb line slow wave structure working on a high-order pass band. The comb line slow wave structure comprises a cavity mode area, and a rectangular resonant cavity array is composed of a series of straight waveguides; electron beam channels penetrate through the rectangular resonant cavity array composed of the straight waveguides and used for transmitting electron beams; and the mutual action of the beams and waves occurs in the cavity mode area. The slow wave structure has the advantages of being suitable for the working of the high-order pass band, and free of the influence of low pass band mode competition, and the power performance of a terahertz backward wave oscillator can be improved.
Description
Technical field
The present invention relates to microwave vacuum field of electronic devices, more particularly to a kind of pectinate line being operated in high order passband is slow
Wave structure.
Background technology
Scientific and technical the developing rapidly of Terahertz, can the requirement for terahertz emission source increasingly strengthens, develop one
Plant practical, high-power, tunable terahertz emission source and vital effect is played to the development of Terahertz science and technology.Return
Wave oscillator is a kind of microwave vacuum electronic device, is a kind of conventional Millimeter-Wave Source and great development potentiality terahertz emission
Source, it produces microwave oscillation using the backward wave in slow-wave structure and beam coupling, can realize in very wide frequency band
Electronic tuning, but it is as the lifting of frequency, small size electron optical system, radio frequency system bring very big technology and choose
War, causes the power magnitude of backward wave oscillator to decline quickly it is impossible to meet the long-range imaging of Terahertz and Terahertz spectrum analyses etc.
The needs of high-power applications.
As shown in figure 1, pectinate line is the most frequently used slow-wave structure of current Terahertz backward wave oscillator, by channel mould area 1-1, chamber
Mould area 1-2 forms, and electronics note 1-3 carries out with electromagnetic wave in channel mould area noting ripple interaction.Pectinate line slow-wave structure is applied to terahertz
Hereby backward wave oscillator has the characteristics that mainly due to it：First, the two-dimensional structure of slow-wave structure is compatible with micro fabrication, can
With easily by UV-LIGA (Vacuum-Lithographie Galanoformung Abformung, vacuum ultraviolet-light
Carve, electroforming and injection) or the micro fabrication such as DRIE (Deep Reactive Ion Etching, deep reaction ion etching) real
Existing；Second, the fundamental wave of slow-wave structure is forward-wave, by the use of its -1 backward spatial harmonic as mode of operation, it is possible to obtain suitable
When running voltage and higher coupled impedance；3rd, the coupled structure of slow-wave structure is fairly simple, easily designs and realizes other
Assembly, for example, obtain matching absorber and power range system of backward wave oscillator etc..Therefore, pectinate line is with respect to folded waveguide
Or metal column array slow-wave structure has very big advantage respectively in terms of coupled impedance magnitude and coupling difficulty.Nonetheless,
In Terahertz backward wave oscillator is developed, realize being also required to overcome when altofrequency and high-power performance using pectinate line slow-wave structure
The technical barrier that small size is brought.
As shown in Fig. 2 the dispersion curve of pectinate line assumes passband and the spaced characteristic of leukorrhagia stopping, in dispersion curve certainly
Under be respectively lower cut-off region S0, low order passband channel mould area T1, the first leukorrhagia stopping S1 and high order passband Qiang Mo area T2 to upper region.One
As pectinate line be operated in channel mould it is impossible to directly select the Qiang Mo area of high order passband, this is because：First, pectinate line is in chamber mould
Area does not have electron beam channel, and second it is impossible to avoid the mode competition of low order passband.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of pectinate line slow-wave structure being operated in high order passband, in order to solve
Certainly in prior art, pectinate line slow-wave structure realizes altofrequency and the problem of high-power poor-performing.
For solving above-mentioned technical problem, the present invention provides a kind of pectinate line slow-wave structure being operated in high order passband, including：
Qiang Mo area, forms rectangular cavity array by a series of straight wave guides；It is rectangular that electron beam channel runs through straight wave guide group
Resonant cavity array, in order to transmit electronics note；Note ripple interaction occurs in described Qiang Mo area.
Further, described pectinate line slow-wave structure also includes：
The channel mould area that no longer transmission electronics is noted.
Further, described pectinate line slow-wave structure also includes：
Transition region, connects described channel mould area and Qiang Mo area, would operate in the low frequency groove of low order passband as filter circuit
Mould electromagnetic field is limited in channel mould area, and with chamber mould separate from.
The present invention has the beneficial effect that：
The slow-wave structure of the present invention has the characteristics that to be applied to the work of high order passband and is not affected by lower passband mode competition,
The power-performance of Terahertz backward wave oscillator can be improved.
Brief description
Fig. 1 is existing pectinate line slow-wave structure schematic diagram；
Fig. 2 is existing pectinate line slow-wave structure dispersion curve schematic diagram；
Fig. 3 is a kind of pectinate line slow-wave structure schematic diagram being operated in high order passband in the embodiment of the present invention；
Fig. 4 is slow-wave structure lower passband channel mould and -1 backward wave dispersion characteristics ratio of upper passband chamber mould in the embodiment of the present invention
Relatively scheme；
Fig. 5 is slow-wave structure lower passband channel mould and -1 backward wave axis coupling resistance of upper passband chamber mould in the embodiment of the present invention
Anti- comparison diagram；
Fig. 6 is slow-wave structure monocycle lower passband channel mould two dimensional electric field figure in the embodiment of the present invention；
Fig. 7 is slow-wave structure monocycle upper passband chamber mould two dimensional electric field figure in the embodiment of the present invention.
Specific embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention will be described in further detail.It should be appreciated that it is described herein
Specific embodiment only in order to explain the present invention, do not limit the present invention.
The present invention is suitable for the slow-wave structure of high-power Terahertz backward wave oscillator to obtain, and keeping, pectinate line is intrinsic
Micro Process is compatible, cold characterisitic parameter is good and simply couples under superiority condition, interaction region is arranged on the Qiang Mo area of pectinate line
Domain, is used as filter circuit by small size waveguide and connects channel mould region and chamber mould region, using its lower cut-off characteristics, channel mould is electric
Magnetic field is isolated to outside interaction region, solves lower passband mode competition that may be present, needed for making to only exist near electron beam channel
Chamber mould electromagnetic field.
As shown in figure 3, the present embodiments relate to a kind of pectinate line slow-wave structure being operated in high order passband, including：
Channel mould area 1, no longer transmission electronics note；
Note ripple interaction occurs in Qiang Mo area 2, forms rectangular cavity array by a series of straight wave guides 3；Electron beam channel 4
Run through straight wave guide 3 composition rectangular cavity array, in order to transmit electronics note 5；
Transition region 6, connects channel mould area 1 and Qiang Mo area 2 on geometry, physically would operate in as filter circuit
The low frequency channel mould electromagnetic field of low order passband is limited in channel mould area and is separated from, this circuit to working in higher modes with chamber mould
Altofrequency magnetic distribution affects very little.
The slow-wave structure of innovation structure of the present invention, has and is applied to the work of high order passband and is not subject to lower passband mode competition shadow
The feature rung, can improve the power-performance of Terahertz backward wave oscillator.
Arbitrarily select a kind of pectinate line slow-wave structure being operated in high order passband, setting structure size (unit：Mm) a=
1.9, b=0.3, p=0.7, d=0.3, h=0.7, rc=0.22, x=1, y=0.3, t=0.35.Wherein, a represent channel mould and
The broadside of Qiang Mo area waveguide is long, and b represents the narrow length of side of channel mould area waveguide, and p represents the cycle of the array of Qiang Mo area straight wave guide, d table
Show the narrow length of side of straight wave guide, h represents the length of straight wave guide, and rc represents the radius of electron beam channel, and x represents the width of transition region waveguide
The length of side, y represents the length of transition region waveguide, and t represents the distance of electron beam channel centre distance straight wave guide bottom.
Using 3 D electromagnetic software, the slow-wave structure of the present invention is simulated, is calculated lower passband channel mould and upper passband
The dispersion curve of chamber mould and axis coupled impedance, analog result as shown in Figure 4 and Figure 5, monocycle lower passband channel mould and upper passband
The field distribution of chamber mould is as shown in Figure 6 and Figure 7.
Fig. 4 is -1 backward wave dispersion characteristics comparison diagram of slow-wave structure lower passband channel mould of the present invention and upper passband chamber mould, knot
Fruit shows that slow-wave structure upper passband chamber of the present invention mould has higher running voltage than low pass slot die, needs new slow wave is tied
Structure is operated voltage design, is disposed in suitable scope, and upper passband chamber mould and lower passband channel mould have one section of frequency domain tool
There is identical mutually light speed ratio, illustrate that running voltage is simultaneously synchronous with two passbands within this range；
Fig. 5 compares for -1 backward wave axis coupled impedance of slow-wave structure lower passband channel mould of the present invention and upper passband chamber mould
Figure, result shows that slow-wave structure upper passband chamber of the present invention mould has higher coupled impedance than low pass slot die, in upper passband chamber
Mould and the synchronization zone of lower passband channel mould, chamber mold shaft line coupled impedance is much larger than channel mould coupled impedance, illustrates slow by appropriate design
Wave circuit size, can make backward wave oscillator in the mould starting of oscillation of upper passband chamber, in lower passband not starting of oscillation, can solve the problem that upper passband works
When lower passband mode competition；
Fig. 6 is invention slow-wave structure monocycle lower passband channel mould two dimensional electric field figure, and result shows lower passband channel mould electromagnetic field
Effectively isolated with interaction region by filter circuit, lower passband channel mould mode competition can be solved；
Fig. 7 is slow-wave structure monocycle upper passband chamber of the present invention mould two dimensional electric field figure, result display upper passband chamber mould electromagnetism
Field concentrates on interaction region, if being optimized design, can lift Terahertz backward wave oscillator performance further.
In the new pectinate line slow-wave structure of the present invention, keeping, outside pectinate line advantage, being operated in by making slow-wave structure
High order passband chamber mould, realizes the high-power applications of the higher frequency under identical physical dimension.In order to using high order passband as
Mode of operation, in addition to additionally increasing electron beam channel in Qiang Mo area, also by the use of small size waveguide as filter circuit, utilizes it
Lower cut-off characteristicses, low frequency channel mould electromagnetic field is isolated to outside interaction region, solves low pass that may be present in upper passband work
Band model competes, and backward wave oscillator can utilize -1 space harmonics of high order passband of the slow-wave structure of the present invention, can improve
The power-performance of Terahertz backward wave oscillator.
Although being example purpose, have been disclosed for the preferred embodiments of the present invention, those skilled in the art will recognize
Various improvement, increase and replacement are also possible, and therefore, the scope of the present invention should be not limited to above-described embodiment.
Claims (2)
1. a kind of pectinate line slow-wave structure being operated in high order passband is it is characterised in that include：
Qiang Mo area, forms rectangular cavity array by a series of straight wave guides；Electron beam channel runs through the rectangular resonance of straight wave guide group
Chamber array, in order to transmit electronics note；Note ripple interaction occurs in described Qiang Mo area；
Transition region, connects channel mould area and Qiang Mo area, would operate in the low frequency channel mould electromagnetic field of low order passband as filter circuit
Be limited in channel mould area, and with chamber mould separate from.
2. it is operated in the pectinate line slow-wave structure of high order passband as claimed in claim 1 it is characterised in that described pectinate line is slow
Wave structure also includes：
The channel mould area that no longer transmission electronics is noted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835073.2A CN104538271B (en) | 2014-12-29 | 2014-12-29 | Comb line slow wave structure working on high-order pass band |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410835073.2A CN104538271B (en) | 2014-12-29 | 2014-12-29 | Comb line slow wave structure working on high-order pass band |
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| CN104538271A CN104538271A (en) | 2015-04-22 |
| CN104538271B true CN104538271B (en) | 2017-02-22 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104934668B (en) * | 2015-06-29 | 2017-06-27 | 北京大学 | A kind of high q-factor Terahertz open cavity and its modeling method with modeling effect |
| CN105489459A (en) * | 2015-12-08 | 2016-04-13 | 中国电子科技集团公司第十二研究所 | Novel half-cycle staggered double-gate slow-wave structure |
| CN105513928B (en) * | 2016-01-04 | 2017-12-19 | 电子科技大学 | A kind of slow-wave structure of the plane line of rabbet joint |
| CN107993911B (en) * | 2017-11-24 | 2019-05-24 | 电子科技大学 | A kind of Terahertz Zigzag type octamonic amplifier |
| CN109801823B (en) * | 2019-02-15 | 2020-08-11 | 电子科技大学 | Multi-injection high-order mold injection wave interaction structure based on cold cathode |
| CN109872935B (en) * | 2019-02-15 | 2021-02-02 | 电子科技大学 | Multi-injection high-order mode array type high-frequency interaction system based on cold cathode |
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| US4851736A (en) * | 1988-06-03 | 1989-07-25 | Raytheon Company | Helical waveguide to rectangular waveguide coupler |
| CN1996659A (en) * | 2005-12-28 | 2007-07-11 | 中国科学院电子学研究所 | The high-frequency circuit structure for the mutual conversion of the coaxial electric mode of the rectangular waveguide mode and round waveguide |
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