CN104538271A - Comb line slow wave structure working on high-order pass band - Google Patents
Comb line slow wave structure working on high-order pass band Download PDFInfo
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- CN104538271A CN104538271A CN201410835073.2A CN201410835073A CN104538271A CN 104538271 A CN104538271 A CN 104538271A CN 201410835073 A CN201410835073 A CN 201410835073A CN 104538271 A CN104538271 A CN 104538271A
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- slow wave
- wave structure
- passband
- district
- mould
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
- H01J23/28—Interdigital slow-wave structures; Adjustment therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
- H01J25/42—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field
- H01J25/46—Tubes in which an electron stream interacts with a wave travelling along a delay line or equivalent sequence of impedance elements, and with a magnet system producing an H-field crossing the E-field the backward travelling wave being utilised
Abstract
The invention discloses a comb line slow wave structure working on a high-order pass band. The comb line slow wave structure comprises a cavity mode area, and a rectangular resonant cavity array is composed of a series of straight waveguides; electron beam channels penetrate through the rectangular resonant cavity array composed of the straight waveguides and used for transmitting electron beams; and the mutual action of the beams and waves occurs in the cavity mode area. The slow wave structure has the advantages of being suitable for the working of the high-order pass band, and free of the influence of low pass band mode competition, and the power performance of a terahertz backward wave oscillator can be improved.
Description
Technical field
The present invention relates to microwave vacuum field of electronic devices, particularly relate to a kind of pectinate line slow wave structure being operated in high order passband.
Background technology
Developing rapidly of Terahertz science and technology, can the requirement for terahertz emission source strengthens day by day, develop a kind of development of practical, high-power, tunable terahertz emission source to Terahertz science and technology and play vital effect.Backward wave oscillator is a kind of microwave vacuum electronic device, be a kind of conventional Millimeter-Wave Source and have development potentiality terahertz emission source, it utilizes the backward wave in slow wave structure and beam coupling and produces microwave oscillation, electronic tuning can be realized in very wide frequency band, but along with the lifting of frequency, small size brings very large technological challenge to electron-optical system, radio frequency system, cause the power magnitude of backward wave oscillator to decline very fast, the needs of the high-power applications such as the long-range imaging of Terahertz and Terahertz spectrum analysis cannot be met.
As shown in Figure 1, pectinate line is the most frequently used slow wave structure of current Terahertz backward wave oscillator, and by channel mould district 1-1, Qiang Mo district 1-2 forms, and electron beam 1-3 carries out the mutual effect of note ripple in channel mould district and electromagnetic wave.Pectinate line slow wave structure is applicable to Terahertz backward wave oscillator and has following characteristics mainly due to it: first, the two-dimensional structure of slow wave structure and micro fabrication compatibility, can easily pass through UV-LIGA (Vacuum-Lithographie Galanoformung Abformung, vacuum ultraviolet-photoetching, electroforming and injection moulding) or the micro fabrication such as DRIE (Deep Reactive Ion Etching, deep reaction ion etching) realize; The second, the first-harmonic of slow wave structure is forward wave, utilizes its-1 backward spatial harmonic as mode of operation, can obtain suitable operating voltage and higher coupling impedance; 3rd, the coupled structure of slow wave structure is fairly simple, other assemblies of easy Design and implementation, such as, obtain the matching absorber and power range system etc. of backward wave oscillator.Therefore, pectinate line has very large advantage respectively relative to folded waveguide or metal column array slow wave structure in coupling impedance magnitude and coupling difficulty.Nonetheless, in the development of Terahertz backward wave oscillator, when utilizing pectinate line slow wave structure to realize high-frequency and high-power performance, also need to overcome the technical barrier that small size is brought.
As shown in Figure 2, the dispersion curve of pectinate line presents passband and is only with spaced characteristic, and in dispersion curve, region is from bottom to top respectively lower cut-off region S0, low order passband channel mould district T1, first only band S1 and high order passband Qiang Mo district T2.General pectinate line is operated in channel mould, directly cannot select the Qiang Mo district of high order passband, this is because: the first, pectinate line does not have electron beam channel in Qiang Mo district, and the second, the mode competition of low order passband cannot be avoided.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of pectinate line slow wave structure being operated in high order passband, realizes the problem of high-frequency and high-power poor-performing in order to solve pectinate line slow wave structure in prior art.
For solving the problems of the technologies described above, the invention provides a kind of pectinate line slow wave structure being operated in high order passband, comprising:
Qiang Mo district, forms rectangular cavity array by a series of straight wave guide; Electron beam channel runs through straight wave guide composition rectangular cavity array, notes in order to transmission electronic; The mutual effect of note ripple occurs in described Qiang Mo district.
Further, described pectinate line slow wave structure also comprises:
The no longer channel mould district of transmission electronic note.
Further, described pectinate line slow wave structure also comprises:
Transition region, connects described channel mould district and Qiang Mo district, as filter circuit, the low frequency channel mould electromagnetic field being operated in low order passband is limited in channel mould district, and with chamber mould separate from.
Beneficial effect of the present invention is as follows:
Slow wave structure of the present invention has and is applicable to the work of high order passband and not by the feature that lower passband mode competition affects, can improves the power-performance of Terahertz backward wave oscillator.
Accompanying drawing explanation
Fig. 1 is existing pectinate line slow wave structure schematic diagram;
Fig. 2 is existing pectinate line slow wave structure dispersion curve schematic diagram;
Fig. 3 is a kind of pectinate line slow wave structure schematic diagram being operated in high order passband in the embodiment of the present invention;
Fig. 4 is slow wave structure lower passband channel mould and upper passband chamber mould-1 backward wave dispersion characteristics comparison diagram in the embodiment of the present invention;
Fig. 5 is slow wave structure lower passband channel mould and upper passband chamber mould-1 backward wave axis coupling impedance comparison diagram in the embodiment of the present invention;
Fig. 6 is slow wave structure monocycle lower passband channel mould two dimensional electric field figure in the embodiment of the present invention;
Fig. 7 is slow wave structure monocycle upper passband chamber mould two dimensional electric field figure in the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, do not limit the present invention.
The present invention is suitable for the slow wave structure of high-power Terahertz backward wave oscillator in order to obtain, under the micro Process compatibility keeping pectinate line intrinsic, the good and simple coupling superiority condition of cold characterisitic parameter, interaction region is arranged on the mould region, chamber of pectinate line, channel mould region and mould region, chamber is connected as filter circuit by small size waveguide, its lower cut-off characteristics is utilized to isolate outside interaction region by channel mould electromagnetic field, solve the mode competition that lower passband may exist, make the chamber mould electromagnetic field needed for only existing near electron beam channel.
As shown in Figure 3, the embodiment of the present invention relates to a kind of pectinate line slow wave structure being operated in high order passband, comprising:
Channel mould district 1, no longer transmission electronic note;
The mutual effect of note ripple occurs in Qiang Mo district 2, forms rectangular cavity array by a series of straight wave guide 3; Electron beam channel 4 runs through straight wave guide 3 and forms rectangular cavity array, in order to transmission electronic note 5;
Transition region 6, geometry connects channel mould district 1 and Qiang Mo district 2, as filter circuit the low frequency channel mould electromagnetic field being operated in low order passband is limited in channel mould district physically and separate with chamber mould from, this circuit is very little on the high-frequency magnetic distribution impact working in higher modes.
The slow wave structure of innovation structure of the present invention, has and is applicable to the work of high order passband and not by the feature that lower passband mode competition affects, can improves the power-performance of Terahertz backward wave oscillator.
A kind of pectinate line slow wave structure being operated in high order passband of any selection, setting structure size (unit: mm) a=1.9, b=0.3, p=0.7, d=0.3, h=0.7, rc=0.22, x=1, y=0.3, t=0.35.Wherein, a represents that the broadside of channel mould and the waveguide of Qiang Mo district is long, b represents the narrow length of side of channel mould district waveguide, p represents the cycle of the array of Qiang Mo district straight wave guide, and d represents the narrow length of side of straight wave guide, and h represents the length of straight wave guide, rc represents the radius of electron beam channel, x represents that the broadside of transition region waveguide is long, and y represents the length of transition region waveguide, and t represents the distance bottom electron beam channel centre distance straight wave guide.
3 D electromagnetic software is utilized to simulate slow wave structure of the present invention, calculate dispersion curve and the axis coupling impedance of lower passband channel mould and upper passband chamber mould, as shown in Figure 4 and Figure 5, the field distribution of monocycle lower passband channel mould and upper passband chamber mould as shown in Figure 6 and Figure 7 for analog result.
Fig. 4 is-1 backward wave dispersion characteristics comparison diagram of slow wave structure lower passband channel mould of the present invention and upper passband chamber mould, result shows slow wave structure upper passband chamber of the present invention mould and has higher operating voltage than lower passband channel mould, need to carry out working voltage design to new type slow wave structure, be arranged in suitable scope, upper passband chamber mould and lower passband channel mould have one section of frequency domain to have identical phase light velocity ratio, illustrate at this operated within range voltage simultaneously synchronous with two passbands;
Fig. 5 is-1 backward wave axis coupling impedance comparison diagram of slow wave structure lower passband channel mould of the present invention and upper passband chamber mould, result shows slow wave structure upper passband chamber of the present invention mould and has higher coupling impedance than lower passband channel mould, in the synchronization zone of upper passband chamber mould and lower passband channel mould, chamber mold shaft line coupling impedance is much larger than channel mould coupling impedance, illustrate by appropriate design slow wave circuit size, backward wave oscillator can be made in the mould starting of oscillation of upper passband chamber, in lower passband not starting of oscillation, lower passband mode competition during upper passband work can be solved;
Fig. 6 is invention slow wave structure monocycle lower passband channel mould two dimensional electric field figure, and the result display lower passband filtered circuit of channel mould electromagnetic field and interaction region effectively isolate, and can solve the mode competition of lower passband channel mould;
Fig. 7 is slow wave structure monocycle upper passband chamber mould two dimensional electric field figure of the present invention, and result display upper passband chamber mould electromagnetic field concentrates on interaction region, if be optimized design, can promote Terahertz backward wave oscillator performance further.
In novel pectinate line slow wave structure of the present invention, outside maintenance pectinate line advantage, by making slow wave structure be operated in high order passband chamber mould, realize the high-power applications of the higher frequency under identical physical dimension.In order to using high order passband as mode of operation, except additionally increasing except electron beam channel in Qiang Mo district, also utilize small size waveguide as filter circuit, utilize its lower cut-off characteristics, low frequency channel mould electromagnetic field is isolated outside interaction region, solve the lower passband mode competition that may exist in upper passband work, backward wave oscillator can utilize high order passband-1 space harmonics of slow wave structure of the present invention, can improve the power-performance of Terahertz backward wave oscillator.
Although be example object, disclose the preferred embodiments of the present invention, it is also possible for those skilled in the art will recognize various improvement, increase and replacement, and therefore, scope of the present invention should be not limited to above-described embodiment.
Claims (3)
1. be operated in a pectinate line slow wave structure for high order passband, it is characterized in that, comprising:
Qiang Mo district, forms rectangular cavity array by a series of straight wave guide; Electron beam channel runs through straight wave guide composition rectangular cavity array, notes in order to transmission electronic; The mutual effect of note ripple occurs in described Qiang Mo district.
2. be operated in the pectinate line slow wave structure of high order passband as claimed in claim 1, it is characterized in that, described pectinate line slow wave structure also comprises:
The no longer channel mould district of transmission electronic note.
3. be operated in the pectinate line slow wave structure of high order passband as claimed in claim 2, it is characterized in that, described pectinate line slow wave structure also comprises:
Transition region, connects described channel mould district and Qiang Mo district, as filter circuit, the low frequency channel mould electromagnetic field being operated in low order passband is limited in channel mould district, and with chamber mould separate from.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410835073.2A CN104538271B (en) | 2014-12-29 | 2014-12-29 | Comb line slow wave structure working on high-order pass band |
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| CN201410835073.2A CN104538271B (en) | 2014-12-29 | 2014-12-29 | Comb line slow wave structure working on high-order pass band |
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| CN104538271B CN104538271B (en) | 2017-02-22 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934668A (en) * | 2015-06-29 | 2015-09-23 | 北京大学 | High-Q value terahertz opening cavity having mode selection function and mode selection method thereof |
| CN105489459A (en) * | 2015-12-08 | 2016-04-13 | 中国电子科技集团公司第十二研究所 | Novel half-cycle staggered double-gate slow-wave structure |
| CN105513928A (en) * | 2016-01-04 | 2016-04-20 | 电子科技大学 | Planar slot line slow wave structure |
| CN107993911A (en) * | 2017-11-24 | 2018-05-04 | 电子科技大学 | A kind of Terahertz Zigzag type octamonic amplifier |
| CN109801823A (en) * | 2019-02-15 | 2019-05-24 | 电子科技大学 | A kind of more note high orders based on cold cathode are molded into wave interacting formations |
| CN109872935A (en) * | 2019-02-15 | 2019-06-11 | 电子科技大学 | A kind of more note higher mode array high frequency interacting systems based on cold cathode |
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| US4851736A (en) * | 1988-06-03 | 1989-07-25 | Raytheon Company | Helical waveguide to rectangular waveguide coupler |
| CN1996659A (en) * | 2005-12-28 | 2007-07-11 | 中国科学院电子学研究所 | The high-frequency circuit structure for the mutual conversion of the coaxial electric mode of the rectangular waveguide mode and round waveguide |
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2014
- 2014-12-29 CN CN201410835073.2A patent/CN104538271B/en active Active
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| US4851736A (en) * | 1988-06-03 | 1989-07-25 | Raytheon Company | Helical waveguide to rectangular waveguide coupler |
| CN1996659A (en) * | 2005-12-28 | 2007-07-11 | 中国科学院电子学研究所 | The high-frequency circuit structure for the mutual conversion of the coaxial electric mode of the rectangular waveguide mode and round waveguide |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934668A (en) * | 2015-06-29 | 2015-09-23 | 北京大学 | High-Q value terahertz opening cavity having mode selection function and mode selection method thereof |
| CN105489459A (en) * | 2015-12-08 | 2016-04-13 | 中国电子科技集团公司第十二研究所 | Novel half-cycle staggered double-gate slow-wave structure |
| CN105513928A (en) * | 2016-01-04 | 2016-04-20 | 电子科技大学 | Planar slot line slow wave structure |
| CN107993911A (en) * | 2017-11-24 | 2018-05-04 | 电子科技大学 | A kind of Terahertz Zigzag type octamonic amplifier |
| CN109801823A (en) * | 2019-02-15 | 2019-05-24 | 电子科技大学 | A kind of more note high orders based on cold cathode are molded into wave interacting formations |
| CN109872935A (en) * | 2019-02-15 | 2019-06-11 | 电子科技大学 | A kind of more note higher mode array high frequency interacting systems based on cold cathode |
| CN109801823B (en) * | 2019-02-15 | 2020-08-11 | 电子科技大学 | Multi-injection high-order mold injection wave interaction structure based on cold cathode |
| CN109872935B (en) * | 2019-02-15 | 2021-02-02 | 电子科技大学 | Multi-injection high-order mode array type high-frequency interaction system based on cold cathode |
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| CN104538271B (en) | 2017-02-22 |
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