CN108807114B - Terahertz EIO manufacturing method working in high-order mode, terahertz EIO and resonant cavity - Google Patents
Terahertz EIO manufacturing method working in high-order mode, terahertz EIO and resonant cavity Download PDFInfo
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- CN108807114B CN108807114B CN201810533135.2A CN201810533135A CN108807114B CN 108807114 B CN108807114 B CN 108807114B CN 201810533135 A CN201810533135 A CN 201810533135A CN 108807114 B CN108807114 B CN 108807114B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/02—Tubes with electron stream modulated in velocity or density in a modulator zone and thereafter giving up energy in an inducing zone, the zones being associated with one or more resonators
- H01J25/10—Klystrons, i.e. tubes having two or more resonators, without reflection of the electron stream, and in which the stream is modulated mainly by velocity in the zone of the input resonator
- H01J25/11—Extended interaction klystrons
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
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Abstract
The invention relates to a terahertz EIO (electronic article inspection) manufacturing method working in a high-order mode, a terahertz EIO and a resonant cavity, wherein under the working environment of the high-order mode, the number of resonant gaps in a terahertz extended interaction oscillator is determined by optimizing working voltage and current on the premise of ensuring the stable operation of the terahertz extended interaction oscillator; compared with the traditional extended interaction oscillator working in the fundamental mode, the oscillator has a great difference. By selecting the TM31 mode as the mode of operation, the cavity spacing is enlarged at the same operating frequency. By doing so, on one hand, the power capacity in the resonant cavity is improved, and the output power of the device is improved; on the other hand, the device size is enlarged, and the difficulty of micro-machining can be reduced to a certain extent. The final device can achieve a power output of about 85W and an operating frequency of 338.4 GHz. The design method working in the high-order mode is suitable for improving the output power of the terahertz extended interaction oscillator and the engineering realizability of devices.
Description
Technical Field
the invention belongs to a high-performance Terahertz source, and particularly relates to a high-frequency structure for improving the output power and feasibility of a Terahertz (Terahertz, 1 THz-1012 Hz) extended interaction oscillator.
background
Terahertz (THz) waves refer to electromagnetic waves having frequencies from 0.3THz to 3THz (1THz is 1012Hz), which are between millimeter waves and infrared light, which is the last frequency band that has not been fully recognized and utilized by humans. The terahertz wave is located in a transition region from a macroscopic classical theory to a microscopic quantum theory, and due to the special position of the terahertz wave, the radiation has the unique advantages of strong permeability, high resolution, non-ionization propagation, rich spectral characteristics and the like. Due to the characteristics of the terahertz waves, the terahertz waves have great application potential in the fields of information communication, medical diagnosis, biotechnology, material science, astronomy, military and the like, and the terahertz waves attract high attention of all countries in the world. In the terahertz technology, a terahertz radiation source is the basis of terahertz application, but due to the influence of factors such as unstable working and low output power of most of the existing terahertz sources at present in a room temperature environment, the further development of terahertz science is greatly restricted, so that the development of the terahertz radiation source with stable performance and high output performance is the root of the development of the terahertz technology.
To date, the method of vacuum electronics is the most common means of generating high power terahertz radiation at room temperature. In vacuum electronic Devices, Extended Interaction Devices (EIDs) are an important class of generating Devices, which mainly include oscillators and amplifiers. Especially, the Extended Interaction Oscillator (EIO) is developed very rapidly, and the commercial EIO has been developed to the 220GHz band at present. The CPI company in canada is the most advanced and experienced unit for developing EIO development technology in the world at present, and a 220GHz continuous wave EIO device produced by the CPI company can achieve power output of about 10W, and the reference documents are as follows: http:// www.cpii.com/product.cfm/4/40/155, representing a higher level of design and processing.
however, as the operating frequency continues to increase, the structural size of the extended interaction device has been reduced to sub-millimeter order due to the device co-transition effect, and the structural size of the device now puts a very high demand on the processing precision. The overly fine structural features greatly increase the processing difficulty of the device. Meanwhile, because the resonant cavity in the high-frequency structure has a very high Q value, the phenomenon of electric sparking is very easily caused by the overhigh power density in the cavity, and the integral power capacity of the device is severely limited.
Disclosure of Invention
in order to solve the problems of realizability and reliability of an EIO device in a terahertz waveband, the invention provides a method for manufacturing a terahertz extended interaction oscillator working in a high-order mode, and a 0.3THz extended interaction oscillator is designed based on the method. The oscillator can obtain power output of about 85W under the electron beam condition of 15kV and 160mA, and the working frequency of the device is 338.4 GHz.
The technical scheme of the invention is to provide a method for manufacturing a terahertz extended interaction oscillator, which is characterized by comprising the following steps of:
the method comprises the following steps: under a high-order mode working environment, the number of resonance gaps in the terahertz expansion interaction oscillator is determined by optimizing working voltage and current on the premise of ensuring stable operation of the terahertz expansion interaction oscillator;
Step two: determining the size of each resonant gap in the terahertz extended interaction oscillator working in a higher-order mode according to the synchronous condition of beam wave interaction;
Step three: determining the size of a trapezoidal output waveguide structure according to the reflection coefficient of the output port;
step four: and manufacturing the terahertz extension interaction oscillator according to the parameters obtained in the first step to the third step.
the invention also provides a terahertz extension interaction oscillator working in a higher-order mode and manufactured by the method, which is characterized in that: comprises a resonant cavity and a trapezoidal output waveguide;
The resonant cavity comprises n resonant gaps arranged along the Z direction, the cross section of each resonant gap along XY and YZ planes is dumbbell-shaped, each resonant gap comprises a reentrant part and vacuum parts positioned at two ends of the reentrant part, and the 2n vacuum parts and the reentrant part form a vacuum chamber of the resonant cavity;
the centers of the n reentrant parts are provided with communicated electron beam channels; defining the length direction of a resonant cavity as the Z direction and the height direction of the resonant cavity as the Y direction;
The trapezoidal output waveguide comprises a coupling hole, a gradual change section and a standard waveguide, wherein the xz-direction section size of the coupling hole is smaller than that of the standard waveguide, and the gradual change section is formed by directly and smoothly connecting the coupling hole and two adjacent surfaces of the standard waveguide; the coupling hole is coupled with the cavity of the resonant cavity vacuum chamber.
Further, the coupling hole and the standard waveguide are both rectangular waveguides.
Further, the total width W1 of the resonance gap is 0.8mm, the width W2 of the re-entry portion is 0.5mm, and the diameter D1 of the electron beam passage is 0.3 mm.
further, n is equal to 24.
Further, the total height BH1 of each resonance gap is 2.2mm, and the height BH2 of the reentrant portion is 1.1 mm; the period length of the resonant gap BL1 was 0.2mm, with the length of the vacuum section BL2 being 0.1 mm.
Further, the width OCW of the coupling hole is 0.5mm, and the width OWW of the standard waveguide is 0.7 mm;
The length OCL of the coupling hole is 0.2mm, the height OCH of the coupling hole is 0.1mm, the length OWL of the standard waveguide is 0.35mm, the height OWH of the standard waveguide is 0.4mm, and the height OTH of the transition section is 1.0 mm.
the invention also provides a resonant cavity, which is characterized in that: the resonant cavity comprises n resonant gaps arranged along the Z direction, the cross section of each resonant gap along XY and YZ planes is dumbbell-shaped, the resonant cavity comprises a reentrant part and vacuum parts positioned at two ends of the reentrant part, and 2n vacuum parts and the reentrant part form a vacuum cavity of the resonant cavity;
The centers of the n reentrant parts are provided with communicated electron beam channels; the length direction of the resonant cavity is defined as the Z direction, and the height direction of the resonant cavity is defined as the Y direction.
Further, the total width W1 of the resonance gap is 0.8mm, the width W2 of the re-entry portion is 0.5mm, and the diameter D1 of the electron beam passage is 0.3 mm.
Further, n is equal to 24; the total height BH1 of the resonance gap is 2.2mm, the height BH2 of the re-entry part is 1.1 mm; the period length of the resonant gap BL1 was 0.2mm, with the length of the vacuum section BL2 being 0.1 mm.
Unlike the traditional EIO device which works in the fundamental mode, the EIO device works in the TM31 mode, the working frequencies of the two modes are basically consistent, and the corresponding structural parameters are different. The size parameter of the TM31 structure is enlarged by nearly 1 time compared to the size of the TM11 structure, and its internal space capacity is also enlarged by nearly 1 time.
The invention has the advantages that:
1. the output power of the terahertz EIO can be effectively improved. The high-frequency structure provided by the invention can effectively enlarge the internal space of the resonant gap, increase the power capacity in the resonant cavity and improve the output power of the device by enabling the high-frequency structure to work in a TM31 mode. In this EIO, the output power can reach about 85W.
2. the processing difficulty of the fine structure can be reduced. Due to the adoption of high-order mode operation, the size of the gap structure is enlarged due to the resonance characteristic of the device. At the resonant gap, the height of the gap is increased by nearly 1 time, and under the condition of the same processing precision, the processing realization difficulty of the device is relieved to a certain extent.
3. The device can stably operate. Under the high-order mode working environment, the working voltage and the working current are optimized, the number of gaps is reasonably selected, the beam-wave interaction strength is effectively improved, the mixed mode oscillation is avoided, and the stable operation of the device is ensured.
Drawings
FIG. 1 is a schematic diagram of an overall structure of an extended interaction oscillator and a schematic diagram of a cross-section of a resonant cavity along a YZ plane;
FIG. 2 is a schematic cross-sectional view of the resonant gap along the XY plane;
FIG. 3 is a schematic cross-sectional view of a trapezoidal output waveguide along the XY plane;
FIG. 4 is a schematic cross-sectional view of a trapezoidal output waveguide along the YZ plane;
FIG. 5a, the electric field distribution and the structure size of TM11 mode;
FIG. 5b, electric field distribution and structure size of TM31 mode;
FIG. 6, output performance of EIO operating in TM31 mode;
FIG. 7, electric field distribution in EIO;
fig. 8, impact of the number of resonant gaps on EIO output performance.
The reference numbers in the figures are: 1-electron gun, 2-electron beam channel, 3-resonance gap, 4-trapezoidal output waveguide, 31-coupling hole, 32-standard waveguide and 33-gradual change section.
Detailed Description
the invention is further described with reference to the following figures and specific embodiments. In the present embodiment, all the width directions are in the X direction, the length directions are in the Z direction, and the height directions are in the Y direction.
As can be seen from fig. 1, the whole high-frequency structure of the extended interaction oscillator of the present embodiment is composed of 24 resonant gaps 3 and a trapezoidal output waveguide 4. Direct current electron beams generated by the hot cathode electron gun 1 enter the electron beam channel 2, and generate beam wave interaction with electric fields at the resonance gaps 3, energy is transferred to electromagnetic waves, and the generated terahertz waves are radiated out through the trapezoidal output waveguide 4. Here, the electron gun 1 employs ideal electron beam injection with an operating voltage of 15kV and a current of 160 mA. The electron beam generated by the electron gun 1 has a working voltage of 15kV and a working current of 160mA, and the guiding magnetic field adopts a uniform magnetic field with a strength of 1.0T. Further, the total height BH1 of the resonance gap 3 is 2.2mm, and the height BH2 of the reentrant portion is 1.1 mm. The period length BL1 of the resonant gap 3 is 0.2mm, wherein the length BL2 of the vacuum part is 0.1 mm.
As can be seen from fig. 2, in this embodiment, the cross section (i.e. the section along the XY plane) of the resonant gap 3 is dumbbell-shaped, the middle section is a reentrant portion, the width of the middle section is smaller than the total width of the resonant gap, the center of the reentrant portion is provided with an electron beam channel 2, and the electron beam channel 2 passes through the center of the resonant gap to make the electron beam interact with the gap electric field. The total width W1 of the resonance gap 3 is 0.8mm, the width W2 of the re-entry portion is 0.5mm, and the diameter D1 of the electron beam path 2 is 0.3 mm.
As can be seen from fig. 3, the trapezoidal output waveguide 4 is composed of three parts, namely a coupling hole 31, a transition section 33 and a standard waveguide 32, and the transition section 33 is formed by directly and smoothly connecting two adjacent surfaces of the coupling hole 31 and the standard waveguide 32. Wherein the width OCW of the coupling hole 31 is 0.5mm, the width OWW of the standard waveguide 32 is 0.7mm, and the coupling hole 31 is coupled with the resonant cavity.
fig. 4 is a longitudinal cross-sectional view of the trapezoidal output waveguide 4. Wherein the length OCL of the coupling hole 31 is 0.2mm, the height OCH of the coupling hole 31 is 0.1mm, the length OWL of the standard waveguide 32 is 0.35mm, the height OWH of the standard waveguide 32 is 0.4mm, and the height OTH of the transition section 33 is 1.0 mm.
fig. 5a and 5b are the comparison of the resonant gap structure size and electric field distribution of the TM31 mode and the TM11 mode of the same frequency, respectively. The structural dimensions of the TM31 die are identical here to those noted in fig. 1 and 2. At the same operating frequency, the TM31 structure size is enlarged by nearly 1-fold over the TM11 structure size.
The basic working process is as follows:
the 0.3THz extension interaction oscillator adopting the TM31 mode working high-frequency structure is taken as an embodiment of the invention, the electron gun structure at the front end generates a 160mA direct current electron beam, and the direct current voltage is 15 kV.
under the guidance of a uniform magnetic field of 1.0T, the electron beam enters the high-frequency structure through the electron beam channel, and is continuously modulated by a gap electric field at the resonance gap, and finally, a cluster is formed. Meanwhile, the clustered electron beams strongly interact with the electric field of the TM31 mode, transferring energy to the electromagnetic waves, so that the energy of the electromagnetic waves is effectively amplified and radiated outwards along the output coupling hole. The calculation result of the three-dimensional particle simulation software UNIPIC is shown in FIG. 6, and the EIO device can stably work under the drive of electron beams of 15kV and 160mA, the output power reaches nearly 85W, and the working frequency point is 338.4 GHz. The distribution of the working electric field inside the device is shown in fig. 7, in the EIO, the electric field distribution mode in the resonant cavity during stable operation is the standard TM31 mode, which is consistent with the theoretical design, and the operation of the device is ensured not to be influenced by the oscillation of the mixed mode. The effect of the number of gaps in the cavity on the output power is shown in fig. 8. By analyzing the influence of the number of the resonant gaps, the number of the gaps is selected to be 24, and the output power of the device can be ensured to be the highest.
the high-frequency structure working in a high-order mode can improve the output power of an EIO device and can reduce the processing difficulty of a gap structure to a certain extent. The method can ensure the stable operation of the device, effectively improve the output performance of the device and greatly improve the engineering feasibility of the device.
Claims (8)
1. A manufacturing method of a terahertz EIO working in a high-order mode is characterized by comprising the following steps:
the method comprises the following steps: under a high-order mode working environment, the number of resonance gaps in the terahertz expansion interaction oscillator is determined by optimizing working voltage and current on the premise of ensuring stable operation of the terahertz expansion interaction oscillator;
step two: determining the size of each resonant gap in the terahertz extended interaction oscillator working in a higher-order mode according to the synchronous condition of beam wave interaction;
Step three: determining the size of a trapezoidal output waveguide structure according to the reflection coefficient of the output port;
Step four: and manufacturing the terahertz extension interaction oscillator according to the parameters obtained in the first step to the third step.
2. a terahertz EIO operating in higher order mode fabricated using the method of claim 1, wherein: comprises a resonant cavity and a trapezoidal output waveguide;
The resonant cavity comprises n resonant gaps arranged along the Z direction, the cross section of each resonant gap along XY and YZ planes is dumbbell-shaped, each resonant gap comprises a reentrant part and vacuum parts positioned at two ends of the reentrant part, and the 2n vacuum parts and the reentrant part form a vacuum cavity of the resonant cavity;
The centers of the n reentrant parts are provided with communicated electron beam channels; defining the length direction of a resonant cavity as the Z direction and the height direction of the resonant cavity as the Y direction;
the trapezoidal output waveguide comprises a coupling hole, a gradual change section and a standard waveguide, the XZ-direction section size of the coupling hole is smaller than that of the standard waveguide, and the gradual change section is formed by directly and smoothly connecting the coupling hole and two adjacent surfaces of the standard waveguide; the coupling hole is coupled with the cavity of the resonant cavity vacuum chamber.
3. The terahertz EIO operating in a high-order mode according to claim 2, wherein: the total width W1 of the resonance gap is 0.8mm, the width W2 of the re-entry portion is 0.5mm, and the diameter D1 of the electron beam path is 0.3 mm.
4. The terahertz EIO operating in the higher order mode of claim 3, wherein: n is equal to 24.
5. the terahertz EIO working in a high-order mode according to claim 4, wherein: the total height BH1 of each resonant gap is 2.2mm, and the height BH2 of the reentrant portion is 1.1 mm; the period length of the resonant gap BL1 was 0.2mm, with the length of the vacuum section BL2 being 0.1 mm.
6. the terahertz EIO working in a high-order mode according to claim 5, wherein: the width OCW of the coupling hole is 0.5mm, and the width OWW of the standard waveguide is 0.7 mm;
The length OCL of the coupling hole is 0.2mm, the height OCH of the coupling hole is 0.1mm, the length OWL of the standard waveguide is 0.35mm, the height OWH of the standard waveguide is 0.4mm, and the height OTH of the transition section is 1.0 mm.
7. A resonant cavity, characterized by: the working mode is TM31 mode, which comprises n resonance gaps arranged along Z direction, each resonance gap is dumbbell-shaped along the sections of XY and YZ planes, and comprises a reentrant part and vacuum parts at two ends of the reentrant part, 2n vacuum parts and the reentrant part form a vacuum chamber of the resonant cavity;
The centers of the n reentrant parts are provided with communicated electron beam channels; defining the length direction of a resonant cavity as the Z direction and the height direction of the resonant cavity as the Y direction; the total width W1 of the resonance gap is 0.8mm, the width W2 of the re-entry portion is 0.5mm, and the diameter D1 of the electron beam path is 0.3 mm.
8. The resonant cavity of claim 7, wherein: n is equal to 24; the total height BH1 of the resonance gap is 2.2mm, the height BH2 of the re-entry part is 1.1 mm; the period length of the resonant gap BL1 was 0.2mm, with the length of the vacuum section BL2 being 0.1 mm.
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| CN109545638B (en) * | 2018-11-20 | 2021-01-05 | 西北核技术研究所 | Terahertz extension interaction oscillator with resonant cavity and cross structure |
| CN111524766B (en) * | 2020-04-07 | 2021-09-24 | 电子科技大学 | Processing method of multi-piece stacked terahertz high-frequency interaction system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3688152A (en) * | 1970-03-05 | 1972-08-29 | Siemens Ag | High power klystron |
| CN106098511A (en) * | 2016-07-08 | 2016-11-09 | 西北核技术研究所 | Microwave amplification method based on higher modes trapezium structure extension interaction klystron |
| CN106128918A (en) * | 2016-06-17 | 2016-11-16 | 电子科技大学 | Terahertz EIK high-frequency device |
| CN107068518A (en) * | 2017-03-31 | 2017-08-18 | 西北核技术研究所 | One kind extension interaction klystron and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3688152A (en) * | 1970-03-05 | 1972-08-29 | Siemens Ag | High power klystron |
| CN106128918A (en) * | 2016-06-17 | 2016-11-16 | 电子科技大学 | Terahertz EIK high-frequency device |
| CN106098511A (en) * | 2016-07-08 | 2016-11-09 | 西北核技术研究所 | Microwave amplification method based on higher modes trapezium structure extension interaction klystron |
| CN107068518A (en) * | 2017-03-31 | 2017-08-18 | 西北核技术研究所 | One kind extension interaction klystron and preparation method thereof |
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