CN104538089A - Conducting film structure for dimming film - Google Patents
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- 239000000463 material Substances 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims 3
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 230000035515 penetration Effects 0.000 abstract description 12
- 230000005855 radiation Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 150
- 230000000694 effects Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 3
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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Abstract
本发明公开了一种用于调光薄膜的导电膜结构，其特征在于，包括基膜层、第一透光导电膜层以及第二透光导电膜层；所述第一透光导电膜层设置于基膜层上，用以降低电阻值，具有第一光线折射率；所述第二透光导电膜层设置于第一透光导电膜层上，具有第二光线折射率；其中，所述第一透光导电膜层介于基膜层以及第二透光导电膜层之间，所述第一光线折射率小于第二光线折射率。本发明提供的导电膜结构具有低表面电阻、高光线穿透性、低辐射(可见光高穿透以及红外线低穿透)以及节能功能，当其使用于调光薄膜时，将可大幅提升调光薄膜的整体价值及性能。
The invention discloses a conductive film structure for a dimming film, which is characterized in that it includes a base film layer, a first light-transmitting conductive film layer and a second light-transmitting conductive film layer; the first light-transmitting conductive film layer is provided on the base film layer to reduce the resistance value and has a first light refractive index; the second light-transmitting conductive film layer is provided on the first light-transmitting conductive film layer and has a second light refractive index; wherein, the second light-transmitting conductive film layer is provided on the first light-transmitting conductive film layer The first light-transmitting conductive film layer is between the base film layer and the second light-transmitting conductive film layer, and the first light refractive index is smaller than the second light refractive index. The conductive film structure provided by the present invention has low surface resistance, high light penetration, low radiation (high penetration of visible light and low penetration of infrared rays) and energy-saving functions. When used in dimming films, it can greatly improve dimming. The overall value and performance of the film.
Description
技术领域technical field
本发明涉及导电膜结构，特别涉及一种用于调光薄膜的导电膜结构。The invention relates to a conductive film structure, in particular to a conductive film structure used for a dimming film.
背景技术Background technique
传统的调光薄膜(PDLC或Smart Film)主要是利用设置其上的透明导电膜，透过通电及断电的方式达成对光线穿透与否的控制。具体而言，由于调光薄膜的液晶分子在透明导电膜断电的情况下是随意排列，因此，当光线射入至调光薄膜时，散乱的液晶分子将会对光线产生阻挡的效果，则调光薄膜此时便具有遮蔽光线的功效。另一方面，当透明导电膜通电时，将使得调光薄膜的液晶分子成规则状排列，因此，光线便可在固定范围内穿透调光薄膜，以达到透视调光薄膜的目的。The traditional dimming film (PDLC or Smart Film) mainly uses the transparent conductive film on it to control whether the light penetrates or not by means of power-on and power-off. Specifically, since the liquid crystal molecules of the dimming film are randomly arranged when the transparent conductive film is powered off, when the light enters the dimming film, the scattered liquid crystal molecules will block the light, then At this time, the dimming film has the effect of shielding light. On the other hand, when the transparent conductive film is energized, the liquid crystal molecules of the dimming film will be arranged in a regular shape, so light can penetrate the dimming film within a fixed range to achieve the purpose of seeing through the dimming film.
请参考图1，其为现有技术中，用于调光薄膜的透明导电膜1的剖面图，包含基膜层11以及溅镀膜层13。更进一步来说，现有技术中，在调光薄膜面积较大的情况下，为提升良率，则需降低透明导电膜1的表面电阻。然而，想要降低表面电阻时，需将溅镀膜层13的厚度大幅增加，如此一来，将使得透明导电膜1的光线穿透率降低，并导致调光薄膜整体的光线穿透率不佳。更有甚者，由于现有技术的调光薄膜所使用透明导电膜材质并无Low-E(低辐射，特性为可见光高穿透且红外线低穿透)的功效，因此其节能效果在光线穿透状态时亦较差。Please refer to FIG. 1 , which is a cross-sectional view of a transparent conductive film 1 used for dimming films in the prior art, including a base film layer 11 and a sputtered film layer 13 . Furthermore, in the prior art, in the case of a larger area of the dimming film, in order to improve the yield, it is necessary to reduce the surface resistance of the transparent conductive film 1 . However, when wanting to reduce the surface resistance, the thickness of the sputtered film layer 13 needs to be greatly increased, so that the light transmittance of the transparent conductive film 1 will be reduced, and the overall light transmittance of the dimming film will be poor. . What's more, since the material of the transparent conductive film used in the prior art dimming film does not have the effect of Low-E (low-E, characterized by high penetration of visible light and low penetration of infrared rays), its energy-saving effect is lower than that of light transmission. It is also worse in the transparent state.
据此，如何在顾及良率的情况下，在降低透明导电膜电阻的同时避免透明导电膜的厚度过度增加，以维持调光薄膜整体的光线穿透率，并进一步达成节能的功效，是业界亟需努力的目标。Accordingly, how to reduce the resistance of the transparent conductive film while avoiding an excessive increase in the thickness of the transparent conductive film in consideration of the yield rate, so as to maintain the overall light transmittance of the dimming film and further achieve the effect of energy saving, is an industry challenge. An urgent goal.
发明内容Contents of the invention
为解决前述先前技术的问题，本发明提供了一种用于调光薄膜的导电膜结构，其特征在于，包括基膜层、第一透光导电膜层以及第二透光导电膜层；所述第一透光导电膜层设置于基膜层上，用以降低电阻值，具有第一光线折射率；所述第二透光导电膜层设置于第一透光导电膜层上，具有第二光线折射率；其中，所述第一透光导电膜层介于基膜层以及第二透光导电膜层之间，所述第一光线折射率小于第二光线折射率。In order to solve the problems of the aforementioned prior art, the present invention provides a conductive film structure for dimming films, which is characterized in that it includes a base film layer, a first light-transmitting conductive film layer and a second light-transmitting conductive film layer; The first light-transmitting conductive film layer is arranged on the base film layer to reduce the resistance value and has a first light refractive index; the second light-transmitting conductive film layer is arranged on the first light-transmitting conductive film layer and has a first light-transmitting conductive film layer. Two refractive indices of light; wherein, the first light-transmitting conductive film layer is located between the base film layer and the second light-transmitting conductive film layer, and the first light refractive index is smaller than the second light refractive index.
本发明更提供一种用于调光薄膜的导电膜结构，其特征在于，包括基膜层、第一透光导电膜层、第二透光导电膜层以及第三透光导电膜层；所述第一透光导电膜层设置于基膜层上，具有第一光线折射率；所述第二透光导电膜层设置于第一透光导电膜层上，用以降低电阻值，具有第二光线折射率；所述第三透光导电膜层设置于第二透光导电膜层上，具有第三光线折射率；其中，所述第一透光导电膜层介于基膜层以及第二透光导电膜层之间，所述第二透光导电膜层介于第一透光导电膜层以及第三导电透光膜层间，所述第二光线折射率小于第一光线折射率以及第三光线折射率。The present invention further provides a conductive film structure for dimming films, which is characterized in that it includes a base film layer, a first light-transmitting conductive film layer, a second light-transmitting conductive film layer, and a third light-transmitting conductive film layer; The first light-transmitting conductive film layer is disposed on the base film layer and has a first light refractive index; the second light-transmitting conductive film layer is disposed on the first light-transmitting conductive film layer to reduce resistance and has a first Two refractive indices of light; the third light-transmitting conductive film layer is disposed on the second light-transmitting conductive film layer and has a third light-ray refractive index; wherein, the first light-transmitting conductive film layer is interposed between the base film layer and the second light-transmitting conductive film layer Between two light-transmitting conductive film layers, the second light-transmitting conductive film layer is between the first light-transmitting conductive film layer and the third conductive light-transmitting film layer, and the refractive index of the second light is smaller than the refractive index of the first light and the third ray index of refraction.
附图说明Description of drawings
图1为现有技术用于调光薄膜的透明导电膜的剖面图；Fig. 1 is the cross-sectional view of the transparent conductive film used for dimming film in the prior art;
图2为本发明第一实施例的用于调光薄膜的导电膜结构的剖面图；2 is a cross-sectional view of a conductive film structure for a dimming film according to the first embodiment of the present invention;
图3为本发明第二实施例的用于调光薄膜的导电膜结构的剖面图；3 is a cross-sectional view of a conductive film structure used for a dimming film according to a second embodiment of the present invention;
图中：1.透明导电膜；11.基膜层；13.溅镀膜层；2.导电膜结构；In the figure: 1. Transparent conductive film; 11. Base film layer; 13. Sputtering film layer; 2. Conductive film structure;
20.基膜层；21.第一透光导电膜层；22.第二透光导电膜层；20. The base film layer; 21. The first light-transmitting conductive film layer; 22. The second light-transmitting conductive film layer;
3.导电膜结构；30.基膜层；31.第一透光导电膜层；3. Conductive film structure; 30. Base film layer; 31. First light-transmitting conductive film layer;
32.第二透光导电膜层；33.第三透光导电膜层；32. The second light-transmitting conductive film layer; 33. The third light-transmitting conductive film layer;
r1.第一光线折射率；r2.第二光线折射率；r1. Refractive index of the first ray; r2. Refractive index of the second ray;
R1.第一光线折射率；R2.第二光线折射率；R1. Refractive index of the first ray; R2. Refractive index of the second ray;
R3.第三光线折射率。R3. The third ray refractive index.
具体实施方式：Detailed ways:
以下实施例的说明仅在于阐释本发明，并非用以限制本发明。在以下实施例及图式中，与本发明非直接相关的元件已省略而未绘示，而绘示于图式中的各元件之间的尺寸关系仅为便于理解，而非用以限制为实际的实施比例。The descriptions of the following examples are only to illustrate the present invention, not to limit the present invention. In the following embodiments and drawings, elements that are not directly related to the present invention have been omitted and not shown, and the dimensional relationship between the elements shown in the drawings is only for understanding, and is not intended to be limited to Actual implementation ratio.
首先，请参考图2，其为本发明用于调光薄膜的导电膜结构的剖面图。导电膜结构2包含基膜层20、第一透光导电膜层21以及第二透光导电膜层22。其中，第一透光导电膜层21设置于基膜层20上，用以降低电阻值，具有第一光线折射率r1。第二透光导电膜层22设置于第一透光导电膜层21上，具有第二光线折射率r2。First, please refer to FIG. 2 , which is a cross-sectional view of the structure of the conductive film used in the dimming film of the present invention. The conductive film structure 2 includes a base film layer 20 , a first transparent conductive film layer 21 and a second transparent conductive film layer 22 . Wherein, the first light-transmitting conductive film layer 21 is disposed on the base film layer 20 for reducing the resistance value and has a first light refraction index r1. The second light-transmitting conductive film layer 22 is disposed on the first light-transmitting conductive film layer 21 and has a second light refraction index r2.
须特别说明的是，在本实施例中，第一透光导电膜层21是以溅镀的方式镀于基膜层20上。同样地，第二透光导电膜层22亦以溅镀的方式镀于第一透光导电膜层21上。但其并非用以限制本发明导电膜层的设置方式。It should be noted that, in this embodiment, the first light-transmitting conductive film layer 21 is deposited on the base film layer 20 by sputtering. Similarly, the second transparent conductive film layer 22 is also plated on the first transparent conductive film layer 21 by sputtering. But it is not intended to limit the arrangement of the conductive film layer of the present invention.
进一步说明，第一透光导电膜层21介于基膜层20以及第二透光导电膜层22间。第一光线折射率r1小于第二光线折射率r2。根据光学原理，光线先通过高折射率的材质再通过低折射率的材质，将可得到低光线反射以及高穿透的优势，如此一来，透过前述导电膜结构2，将可在低光线反射以及高穿透之情况下，控制第一透光导电膜层21以及第二透光导电膜层22的总厚度在较薄的范围。To further illustrate, the first transparent conductive film layer 21 is interposed between the base film layer 20 and the second transparent conductive film layer 22 . The refractive index r1 of the first light is smaller than the refractive index r2 of the second light. According to the principle of optics, light first passes through a material with a high refractive index and then a material with a low refractive index, so that the advantages of low light reflection and high penetration can be obtained. In the case of reflection and high transmittance, the total thickness of the first light-transmitting conductive film layer 21 and the second light-transmitting conductive film layer 22 is controlled in a thinner range.
更详细地说明，较佳的实施方式中，前述的导电膜结构2第一透光导电膜层21的材料主要为银，且其厚度介于1纳米(nm)至30纳米间，而第二透光导电膜层22的材质为氧化铟锡(ITO)，且其厚度介于10纳米(nm)至70纳米之间。如此一来，当第一透光导电膜层21的材质为银时，其可在极薄至透明的状态下大幅降低表面电阻达到节能效果，同时阻隔红外光。同样地，由于第二层透光导电膜层22的ITO材质的光线折射率r2为大于第一层透光导电膜层21的银材质的光线折射率r1，因此，导电膜结构2亦具有低光线反射以及高穿透的优点。In more detail, in a preferred embodiment, the material of the first light-transmitting conductive film layer 21 of the aforementioned conductive film structure 2 is mainly silver, and its thickness is between 1 nanometer (nm) and 30 nanometers, while the second The light-transmitting conductive film layer 22 is made of indium tin oxide (ITO), and its thickness is between 10 nanometers (nm) and 70 nanometers. In this way, when the material of the first light-transmitting conductive film layer 21 is silver, it can greatly reduce the surface resistance in an extremely thin to transparent state to achieve an energy-saving effect and block infrared light at the same time. Similarly, since the light refractive index r2 of the ITO material of the second light-transmitting conductive film layer 22 is greater than the light refractive index r1 of the silver material of the first light-transmitting conductive film layer 21, the conductive film structure 2 also has a low The advantages of light reflection and high penetration.
接着，请参考图3，其为本发明用于调光薄膜的导电膜结构3的剖面图。作为另一种结构形式，导电膜结构3包含基膜层30、第一透光导电膜层31、第二透光导电膜层32以及第三透光导电膜层33。其中，第一透光导电膜层31设置于基膜层30上，具有第一光线折射率R1。第二透光导电膜层32设置于第一透光导电膜层31上，用以降低电阻值，具有第二光线折射率R2。第三透光导电膜层33设置于第二透光导电膜层32上，具有第三光线折射率R3。Next, please refer to FIG. 3 , which is a cross-sectional view of the conductive film structure 3 used in the dimming film of the present invention. As another structural form, the conductive film structure 3 includes a base film layer 30 , a first transparent conductive film layer 31 , a second transparent conductive film layer 32 and a third transparent conductive film layer 33 . Wherein, the first light-transmitting conductive film layer 31 is disposed on the base film layer 30 and has a first light refraction index R1. The second light-transmitting conductive film layer 32 is disposed on the first light-transmitting conductive film layer 31 for reducing the resistance value and has a second light refraction index R2. The third light-transmitting conductive film layer 33 is disposed on the second light-transmitting conductive film layer 32 and has a third light refraction index R3.
须特别说明的是，类似地，于本实施方式中，第一透光导电膜层31以溅镀的方式镀于基膜层30上，第二透光导电膜层32以溅镀的方式镀于第一透光导电膜层31上，第三透光导电膜层33以溅镀的方式镀于第二透光导电膜层32上。其中，第一透光导电膜层31更用以增强第二透光导电膜32以及基膜层30间的结合关系。It should be noted that, similarly, in this embodiment, the first transparent conductive film layer 31 is deposited on the base film layer 30 by sputtering, and the second transparent conductive film layer 32 is deposited by sputtering. On the first transparent conductive film layer 31 , the third transparent conductive film layer 33 is plated on the second transparent conductive film layer 32 by sputtering. Wherein, the first light-transmitting conductive film layer 31 is further used to enhance the bonding relationship between the second light-transmitting conductive film 32 and the base film layer 30 .
进一步说明，第一透光导电膜层31介于基膜层30以及第二透光导电膜层32间，第二透光导电膜层32介于第一透光导电膜层31以及第三透光导电膜层33间。第二光线折射率R1小于第一光线折射率R1以及第三光线折射率R3。同样地，根据光学原理，光线若依序通过高折射率材质、低折射率材质以及高折射率材质，将可进一步加强低光线反射以及高穿透的效果。To further illustrate, the first transparent conductive film layer 31 is interposed between the base film layer 30 and the second transparent conductive film layer 32, and the second transparent conductive film layer 32 is interposed between the first transparent conductive film layer 31 and the third transparent conductive film layer. Between 33 photoconductive film layers. The second light refraction index R1 is smaller than the first light refraction index R1 and the third light refraction index R3. Similarly, according to the optical principle, if the light passes through the high refractive index material, the low refractive index material and the high refractive index material in sequence, the effects of low light reflection and high penetration can be further enhanced.
同样地更详细说明，较佳的实施方式中，前述的导电膜结构3的第一透光导电膜层31的材料主要为氧化铟锡(ITO)、氮化硅(Si3N4)、五氧化二铌(Nb2O5)及二氧化钛(TiO2)其中之一。第二透光导电膜层32的材质为银，且其厚度介于1纳米至30纳米间。第三透光导电膜层33之材质为氧化铟锡(ITO)，且其厚度介于10纳米至70纳米之间。Also in more detail, in a preferred embodiment, the material of the first light-transmitting conductive film layer 31 of the aforementioned conductive film structure 3 is mainly indium tin oxide (ITO), silicon nitride (Si3N4), niobium pentoxide One of (Nb2O5) and titanium dioxide (TiO2). The material of the second light-transmitting conductive film layer 32 is silver, and its thickness is between 1 nanometer and 30 nanometers. The material of the third light-transmitting conductive film layer 33 is indium tin oxide (ITO), and its thickness is between 10 nanometers and 70 nanometers.
如此一来，透过前述的导电膜结构3，将具有以下三优点：(1)第一透光导电膜层31可加强第二透光导电膜层32与基膜层30间之结合关系；(2)光线依序通过高折射率材质(第三透光导电膜层33)、低折射率材质(第二透光导电膜层32)以及高折射率材质(第一透光导电膜层31)，进一步加强低光线反射以及高穿透的效果；以及(3)第二透光导电膜层32的材质为银时，其可在极薄至透明的状态下大幅降低表面电阻达到节能效果，同时阻隔红外光。In this way, through the aforementioned conductive film structure 3, there will be the following three advantages: (1) the first light-transmitting conductive film layer 31 can strengthen the bonding relationship between the second light-transmitting conductive film layer 32 and the base film layer 30; (2) The light passes through the high refractive index material (the third transparent conductive film layer 33 ), the low refractive index material (the second transparent conductive film layer 32 ) and the high refractive index material (the first transparent conductive film layer 31 ) in sequence. ), to further enhance the effects of low light reflection and high penetration; and (3) when the material of the second light-transmitting conductive film layer 32 is silver, it can greatly reduce the surface resistance in an extremely thin to transparent state to achieve an energy-saving effect, At the same time block infrared light.
综上所述，本发明提供一种具有低表面电阻、高光线穿透性、低辐射(可见光高穿透以及红外线低穿透)以及节能功能的导电膜结构，因此，当其使用于调光薄膜时，将可大幅提升调光薄膜的整体价值及性能。In summary, the present invention provides a conductive film structure with low surface resistance, high light penetration, low radiation (high penetration of visible light and low penetration of infrared rays) and energy-saving functions. Therefore, when it is used for dimming When using thin films, the overall value and performance of dimming films will be greatly improved.
上述实施例所述的结构、材料以及尺寸仅为例示性说明本发明的较佳实施方式，以及阐释本发明的技术特征，并非用来限制本发明的保护范畴。本发明并不限于上述实施方式，采用与本发明上述实施例相同或近似的技术特征，而得到的其他用于调光薄膜的导电膜结构，均在本发明的保护范围之内。The structures, materials and dimensions described in the above embodiments are only illustrative examples of preferred implementations of the present invention and explanations of technical features of the present invention, and are not intended to limit the scope of protection of the present invention. The present invention is not limited to the above-mentioned embodiments, and other conductive film structures used for dimming films obtained by adopting the same or similar technical features as the above-mentioned embodiments of the present invention are within the protection scope of the present invention.
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| JP2021067784A (en) * | 2019-10-23 | 2021-04-30 | 凸版印刷株式会社 | Dimming sheet and dimming device |
| CN115061307A (en) * | 2022-06-23 | 2022-09-16 | 珠海兴业新材料科技有限公司 | Low-halation electric control dimming film and preparation method and application thereof |
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| CN108919555A (en) * | 2018-08-07 | 2018-11-30 | 深圳市华星光电技术有限公司 | Opposite substrate and preparation method thereof, display device |
| TWI676924B (en) * | 2018-11-05 | 2019-11-11 | 友達光電股份有限公司 | Touch display device |
| CN112526650A (en) * | 2020-12-09 | 2021-03-19 | 浙江日久新材料科技有限公司 | Low impedance type ITO conductive film |
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| JP2001179868A (en) * | 1999-12-27 | 2001-07-03 | Nitto Denko Corp | Method for manufacturing transparent laminate |
| JP2002015623A (en) * | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | Transparent electrode |
| JP2001353802A (en) * | 2000-06-14 | 2001-12-25 | Nitto Denko Corp | Transparent laminate and filter for plasma display panel |
| JP2004296140A (en) * | 2003-03-25 | 2004-10-21 | Mitsui Chemicals Inc | Transparent conductive thin film laminate |
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| JP7395952B2 (en) | 2019-10-23 | 2023-12-12 | Ｔｏｐｐａｎホールディングス株式会社 | Light control sheet and light control device |
| CN115061307A (en) * | 2022-06-23 | 2022-09-16 | 珠海兴业新材料科技有限公司 | Low-halation electric control dimming film and preparation method and application thereof |
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