CN104538089A - Conducting film structure for dimming film - Google Patents
Conducting film structure for dimming film Download PDFInfo
- Publication number
- CN104538089A CN104538089A CN201510003064.1A CN201510003064A CN104538089A CN 104538089 A CN104538089 A CN 104538089A CN 201510003064 A CN201510003064 A CN 201510003064A CN 104538089 A CN104538089 A CN 104538089A
- Authority
- CN
- China
- Prior art keywords
- light transmitting
- conductive
- transmitting electro
- rete
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012528 membrane Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000035515 penetration Effects 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a conductive film structure for a dimming film, which is characterized by comprising a base film layer, a first light-transmitting conductive film layer and a second light-transmitting conductive film layer; the first light-transmitting conductive film layer is arranged on the base film layer, is used for reducing the resistance value and has a first light refractive index; the second light-transmitting conductive film layer is arranged on the first light-transmitting conductive film layer and has a second light refractive index; the first light-transmitting conductive film layer is arranged between the base film layer and the second light-transmitting conductive film layer, and the first light refractive index is smaller than the second light refractive index. The conductive film structure provided by the invention has the functions of low surface resistance, high light penetrability, low radiation (high visible light penetrability and low infrared ray penetrability) and energy saving, and when the conductive film structure is used for a dimming film, the overall value and the performance of the dimming film can be greatly improved.
Description
Technical field
The present invention relates to conductive film structure, particularly a kind of conductive film structure for dimming film.
Background technology
Traditional dimming film (PDLC or Smart Film) mainly utilizes the nesa coating arranged on it, reaches light penetration whether control through energising and the mode of power-off.Specifically, because the liquid crystal molecule of dimming film is random arrangement when nesa coating power-off, therefore, when light is incident upon dimming film, liquid crystal molecule at random will produce to light the effect stopped, then dimming film now just has effect of shield lights.On the other hand, when nesa coating is energized, will the liquid crystal molecule of dimming film be made to become regular shape to arrange, therefore, light just can penetrate dimming film in fixed range, to reach the object of perspective dimming film.
Please refer to Fig. 1, it is in prior art, for the profile of the nesa coating 1 of dimming film, comprises base membrane layer 11 and sputter rete 13.Further, in prior art, when dimming film area is larger, for promoting yield, then need the sheet resistance reducing nesa coating 1.But, when wanting to reduce sheet resistance, the thickness of sputter rete 13 significantly need be increased, thus, will the light penetration rate of nesa coating 1 be reduced, and cause the light penetration rate of dimming film entirety not good.What is more, and the dimming film due to prior art uses electrically conducting transparent membrane material to there is no effect of Low-E (Low emissivity, characteristic is visible ray high-penetration and infrared ray low penetration), and therefore its energy-saving effect is also poor when light penetration state.
Accordingly, how when taking yield into account, while reduction electrically conducting transparent film resistance, avoid the thickness of nesa coating excessively to increase, to maintain the light penetration rate of dimming film entirety, and reaching energy-conservation effect further, is the target that industry needs effort badly.
Summary of the invention
For solving the problem of aforementioned prior art, the invention provides a kind of conductive film structure for dimming film, it is characterized in that, comprising base membrane layer, the first light transmitting electro-conductive rete and the second light transmitting electro-conductive rete; Described first light transmitting electro-conductive rete is arranged on base membrane layer, in order to reduce resistance value, has the first ray refractive index; Described second light transmitting electro-conductive rete is arranged on the first light transmitting electro-conductive rete, has the second ray refractive index; Wherein, described first light transmitting electro-conductive rete is between base membrane layer and the second light transmitting electro-conductive rete, and described first ray refractive index is less than the second ray refractive index.
The present invention more provides a kind of conductive film structure for dimming film, it is characterized in that, comprises base membrane layer, the first light transmitting electro-conductive rete, the second light transmitting electro-conductive rete and the 3rd light transmitting electro-conductive rete; Described first light transmitting electro-conductive rete is arranged on base membrane layer, has the first ray refractive index; Described second light transmitting electro-conductive rete is arranged on the first light transmitting electro-conductive rete, in order to reduce resistance value, has the second ray refractive index; Described 3rd light transmitting electro-conductive rete is arranged on the second light transmitting electro-conductive rete, has the 3rd ray refractive index; Wherein, described first light transmitting electro-conductive rete is between base membrane layer and the second light transmitting electro-conductive rete, described second light transmitting electro-conductive rete is between the first light transmitting electro-conductive rete and the 3rd conduction light-transmissive film layer, and described second ray refractive index is less than the first ray refractive index and the 3rd ray refractive index.
Accompanying drawing explanation
Fig. 1 is the profile of prior art for the nesa coating of dimming film;
Fig. 2 is the profile of the conductive film structure for dimming film of first embodiment of the invention;
Fig. 3 is the profile of the conductive film structure for dimming film of second embodiment of the invention;
In figure: 1. nesa coating; 11. base membrane layers; 13. sputter retes; 2. conductive film structure;
20. base membrane layers; 21. first light transmitting electro-conductive retes; 22. second light transmitting electro-conductive retes;
3. conductive film structure; 30. base membrane layers; 31. first light transmitting electro-conductive retes;
32. second light transmitting electro-conductive retes; 33. the 3rd light transmitting electro-conductive retes;
R1. the first ray refractive index; R2. the second ray refractive index;
R1. the first ray refractive index; R2. the second ray refractive index;
R3. the 3rd ray refractive index.
Embodiment:
The explanation of following examples is only to explain the present invention, and is not used to limit the present invention.Following examples and graphic in, the element relevant to non-immediate of the present invention omits and does not illustrate, and be illustrated in graphic in each element between size relationship only for ease of understanding, and be not used to be restricted to actual enforcement ratio.
First, please refer to Fig. 2, it is used for the profile of the conductive film structure of dimming film for the present invention.Conductive film structure 2 comprises base membrane layer 20, first light transmitting electro-conductive rete 21 and the second light transmitting electro-conductive rete 22.Wherein, the first light transmitting electro-conductive rete 21 is arranged on base membrane layer 20, in order to reduce resistance value, has the first ray refractive index r1.Second light transmitting electro-conductive rete 22 is arranged on the first light transmitting electro-conductive rete 21, has the second ray refractive index r2.
Should be specified, in the present embodiment, the first light transmitting electro-conductive rete 21 is plated on base membrane layer 20 in the mode of sputter.Similarly, the second light transmitting electro-conductive rete 22 is also plated on the first light transmitting electro-conductive rete 21 in the mode of sputter.But the set-up mode of it is not intended to limiting the invention conductive film layer.
Further illustrate, the first light transmitting electro-conductive rete 21 is between base membrane layer 20 and the second light transmitting electro-conductive rete 22.First ray refractive index r1 is less than the second ray refractive index r2.According to optical principle, light first passes through the material of high index of refraction again by the material of low-refraction, the advantage of low light reflection and high-penetration can be obtained, thus, through aforesaid conductive membrane structure 2, in the situation of low light reflection and high-penetration, the gross thickness of the first light transmitting electro-conductive rete 21 and the second light transmitting electro-conductive rete 22 can be controlled in thinner scope.
Illustrate in greater detail, preferably in execution mode, the material of aforesaid conductive film structure 2 first light transmitting electro-conductive rete 21 is mainly silver, and its thickness is between 1 nanometer (nm) to 30 nanometers, and the material of the second light transmitting electro-conductive rete 22 is tin indium oxide (ITO), and its thickness is between 10 nanometers (nm) to 70 nanometers.Thus, when the material of the first light transmitting electro-conductive rete 21 is silver, it can significantly reduce sheet resistance and reach energy-saving effect under very thin extremely transparent state, intercepts infrared light simultaneously.Similarly, the ray refractive index r2 due to the ITO material of second layer light transmitting electro-conductive rete 22 is the ray refractive index r1 of the silver-colored material being greater than ground floor light transmitting electro-conductive rete 21, and therefore, conductive film structure 2 also has the advantage of low light reflection and high-penetration.
Then, please refer to Fig. 3, it is used for the profile of the conductive film structure 3 of dimming film for the present invention.As another kind of version, conductive film structure 3 comprises base membrane layer 30, first light transmitting electro-conductive rete 31, second light transmitting electro-conductive rete 32 and the 3rd light transmitting electro-conductive rete 33.Wherein, the first light transmitting electro-conductive rete 31 is arranged on base membrane layer 30, has the first ray refractive index R1.Second light transmitting electro-conductive rete 32 is arranged on the first light transmitting electro-conductive rete 31, in order to reduce resistance value, has the second ray refractive index R2.3rd light transmitting electro-conductive rete 33 is arranged on the second light transmitting electro-conductive rete 32, has the 3rd ray refractive index R3.
What should be specified is, similarly, in present embodiment, first light transmitting electro-conductive rete 31 is plated on base membrane layer 30 in the mode of sputter, second light transmitting electro-conductive rete 32 is plated on the first light transmitting electro-conductive rete 31 in the mode of sputter, and the 3rd light transmitting electro-conductive rete 33 is plated on the second light transmitting electro-conductive rete 32 in the mode of sputter.Wherein, the first light transmitting electro-conductive rete 31 is more in order to strengthen the marriage relation between the second transparency conducting film 32 and base membrane layer 30.
Further illustrate, the first light transmitting electro-conductive rete 31 is between base membrane layer 30 and the second light transmitting electro-conductive rete 32, and the second light transmitting electro-conductive rete 32 is between the first light transmitting electro-conductive rete 31 and the 3rd light transmitting electro-conductive rete 33.Second ray refractive index R1 is less than the first ray refractive index R1 and the 3rd ray refractive index R3.Similarly, according to optical principle, if light is sequentially by high index of refraction material, low-refraction material and high index of refraction material, the effect of low light reflection and high-penetration can be strengthened further.
Similarly be described in more detail, preferably in execution mode, the material of the first light transmitting electro-conductive rete 31 of aforesaid conductive film structure 3 be mainly tin indium oxide (ITO), silicon nitride (Si3N4), niobium pentaoxide (Nb2O5) and titanium dioxide (TiO2) one of them.The material of the second light transmitting electro-conductive rete 32 is silver, and its thickness is between 1 nanometer to 30 nanometer.The material of the 3rd light transmitting electro-conductive rete 33 is tin indium oxide (ITO), and its thickness is between 10 nanometer to 70 nanometers.
Thus, through aforesaid conductive film structure 3, following three advantages will be had: (1) first light transmitting electro-conductive rete 31 can strengthen the marriage relation between the second light transmitting electro-conductive rete 32 and base membrane layer 30; (2) light is sequentially by high index of refraction material (the 3rd light transmitting electro-conductive rete 33), low-refraction material (the second light transmitting electro-conductive rete 32) and high index of refraction material (the first light transmitting electro-conductive rete 31), strengthens the effect of low light reflection and high-penetration further; And (3) second materials of light transmitting electro-conductive rete 32 when being silver, it significantly can reduce sheet resistance and reach energy-saving effect very thin to transparent state, intercepts infrared light simultaneously.
In sum, the invention provides the conductive film structure that one has low sheet resistance, high light line penetrability, Low emissivity (visible ray high-penetration and infrared ray low penetration) and power saving function, therefore, when it is used in dimming film, overall value and the performance of dimming film significantly can be promoted.
Structure described in above-described embodiment, material and size are only illustrative better embodiment of the present invention, and explain technical characteristic of the present invention, are not used for limiting protection category of the present invention.The present invention is not limited to above-mentioned execution mode, adopts the technical characteristic identical or approximate with the above embodiment of the present invention, and other conductive film structures for dimming film obtained, all within protection scope of the present invention.
Claims (11)
1. for a conductive film structure for dimming film, it is characterized in that, comprise base membrane layer, the first light transmitting electro-conductive rete and the second light transmitting electro-conductive rete; Described first light transmitting electro-conductive rete is arranged on base membrane layer, in order to reduce resistance value, has the first ray refractive index; Described second light transmitting electro-conductive rete is arranged on the first light transmitting electro-conductive rete, has the second ray refractive index; Wherein, described first light transmitting electro-conductive rete is between base membrane layer and the second light transmitting electro-conductive rete, and described first ray refractive index is less than the second ray refractive index.
2. the conductive film structure for dimming film according to claim 1, is characterized in that, the material of described first light transmitting electro-conductive rete is silver.
3. the conductive film structure for dimming film according to claim 2, is characterized in that, the thickness of described first light transmitting electro-conductive rete is between 1nm to 30nm.
4. the conductive film structure for dimming film according to claim 1, is characterized in that, described in this, the material of the second light transmitting electro-conductive rete is tin indium oxide.
5. the conductive film structure for dimming film according to claim 4, is characterized in that, the thickness of the second light transmitting electro-conductive rete is between 10nm to 70nm.
6. for a conductive film structure for dimming film, it is characterized in that, comprise base membrane layer, the first light transmitting electro-conductive rete, the second light transmitting electro-conductive rete and the 3rd light transmitting electro-conductive rete; Described first light transmitting electro-conductive rete is arranged on base membrane layer, has the first ray refractive index; Described second light transmitting electro-conductive rete is arranged on the first light transmitting electro-conductive rete, in order to reduce resistance value, has the second ray refractive index; Described 3rd light transmitting electro-conductive rete is arranged on the second light transmitting electro-conductive rete, has the 3rd ray refractive index; Wherein, described first light transmitting electro-conductive rete is between base membrane layer and the second light transmitting electro-conductive rete, described second light transmitting electro-conductive rete is between the first light transmitting electro-conductive rete and the 3rd conduction light-transmissive film layer, and described second ray refractive index is less than the first ray refractive index and the 3rd ray refractive index.
7. the conductive film structure for dimming film according to claim 6, is characterized in that, the material of described first light transmitting electro-conductive rete be tin indium oxide, silicon nitride, niobium pentaoxide and titanium dioxide one of them.
8. the conductive film structure for dimming film according to claim 6, is characterized in that, the material of described second light transmitting electro-conductive rete is silver.
9. the conductive film structure for dimming film according to claim 8, is characterized in that, the thickness of described second light transmitting electro-conductive rete is between 1nm to 30nm.
10. the conductive film structure for dimming film according to claim 6, is characterized in that, the material of described 3rd light transmitting electro-conductive rete is tin indium oxide.
11. conductive film structures for dimming film according to claim 10, is characterized in that, the thickness of described 3rd light transmitting electro-conductive rete is between 10nm to 70nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103137547 | 2014-10-30 | ||
| TW103137547 | 2014-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104538089A true CN104538089A (en) | 2015-04-22 |
Family
ID=52853599
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510003064.1A Pending CN104538089A (en) | 2014-10-30 | 2015-01-05 | Conducting film structure for dimming film |
| CN201510648120.7A Pending CN105679416A (en) | 2014-10-30 | 2015-10-09 | Conducting film structure for dimming film |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510648120.7A Pending CN105679416A (en) | 2014-10-30 | 2015-10-09 | Conducting film structure for dimming film |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN104538089A (en) |
| TW (1) | TW201615405A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021067784A (en) * | 2019-10-23 | 2021-04-30 | 凸版印刷株式会社 | Dimming sheet and dimming device |
| CN115061307A (en) * | 2022-06-23 | 2022-09-16 | 珠海兴业新材料科技有限公司 | Low-halation electric control dimming film and preparation method and application thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10663819B2 (en) | 2018-08-07 | 2020-05-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Opposite substrate and preparation method thereof, and display device |
| CN108919555A (en) * | 2018-08-07 | 2018-11-30 | 深圳市华星光电技术有限公司 | Opposite substrate and preparation method thereof, display device |
| TWI676924B (en) * | 2018-11-05 | 2019-11-11 | 友達光電股份有限公司 | Touch display device |
| CN112526650A (en) * | 2020-12-09 | 2021-03-19 | 浙江日久新材料科技有限公司 | Low impedance type ITO conductive film |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052529A (en) * | 1999-08-03 | 2001-02-23 | Mitsui Chemicals Inc | Transparent conductive thin film laminate |
| JP2001179868A (en) * | 1999-12-27 | 2001-07-03 | Nitto Denko Corp | Method for manufacturing transparent laminate |
| JP2002015623A (en) * | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | Transparent electrode |
| JP2001353802A (en) * | 2000-06-14 | 2001-12-25 | Nitto Denko Corp | Transparent laminate and filter for plasma display panel |
| JP2004296140A (en) * | 2003-03-25 | 2004-10-21 | Mitsui Chemicals Inc | Transparent conductive thin film laminate |
| EP2192828A1 (en) * | 2007-09-19 | 2010-06-02 | Asahi Glass Company, Limited | Conductive laminate |
-
2015
- 2015-01-05 CN CN201510003064.1A patent/CN104538089A/en active Pending
- 2015-07-28 TW TW104124364A patent/TW201615405A/en unknown
- 2015-10-09 CN CN201510648120.7A patent/CN105679416A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021067784A (en) * | 2019-10-23 | 2021-04-30 | 凸版印刷株式会社 | Dimming sheet and dimming device |
| JP7395952B2 (en) | 2019-10-23 | 2023-12-12 | Ｔｏｐｐａｎホールディングス株式会社 | Light control sheet and light control device |
| CN115061307A (en) * | 2022-06-23 | 2022-09-16 | 珠海兴业新材料科技有限公司 | Low-halation electric control dimming film and preparation method and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105679416A (en) | 2016-06-15 |
| TW201615405A (en) | 2016-05-01 |
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Application publication date: 20150422 |