TW201615405A - Conductive film structure for use in smart-film and polymer-dispersed liquid crystal - Google Patents
Conductive film structure for use in smart-film and polymer-dispersed liquid crystal Download PDFInfo
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- TW201615405A TW201615405A TW104124364A TW104124364A TW201615405A TW 201615405 A TW201615405 A TW 201615405A TW 104124364 A TW104124364 A TW 104124364A TW 104124364 A TW104124364 A TW 104124364A TW 201615405 A TW201615405 A TW 201615405A
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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Abstract
Description
本發明係關於一種導電膜結構；更具體而言，本發明係關於一種用於調光薄膜之導電膜結構。 The present invention relates to a conductive film structure; more specifically, the present invention relates to a conductive film structure for a light control film.
習知之調光薄膜(PDLC或Smart Film)主要係利用設置其上之透明導電膜，透過通電及斷電之方式達成對光線穿透與否之控制。具體而言，由於調光薄膜之液晶分子於透明導電膜斷電之情況下係隨意排列，因此，當光線射入至調光薄膜時，散亂之液晶分子將會對光線產生阻擋之效果，則調光薄膜此時便具有遮蔽光線之功效。另一方面，當透明導電膜通電時，將使得調光薄膜之液晶分子成規則狀排列，因此，當光線便可於固定範圍內穿透調光薄膜，以達到透視調光薄膜之目的。 The conventional dimming film (PDLC or Smart Film) mainly uses a transparent conductive film disposed thereon to control the penetration of light by means of energization and power-off. Specifically, since the liquid crystal molecules of the light-adjusting film are randomly arranged in the case where the transparent conductive film is de-energized, when the light is incident on the light-adjusting film, the scattered liquid crystal molecules will block the light. Then, the dimming film has the effect of shielding light at this time. On the other hand, when the transparent conductive film is energized, the liquid crystal molecules of the light-adjusting film are arranged in a regular manner, so that the light can penetrate the light-adjusting film in a fixed range to achieve the purpose of see-through the light-adjusting film.
請同時參考第1圖，其為先前技術中，用於調光薄膜之一透明導電膜1之剖面圖，包含一基膜層11以及一濺鍍膜層13。更進一步來說，於先前技術中，在調光薄膜面積較大之情況下，為提升良率，則需降低透明導電膜1之表面電阻。然欲降低表面電阻時，需將濺鍍膜層13之厚度大幅增加，如此一來，將使得透明導電膜1之光線穿透率降低，並導致調光薄膜整體之光線穿透率降不佳。更者，由於先前技術之調光薄膜所使用透明導 電膜材質並無Low-E(低輻射，特性為可見光高穿透且紅外線低穿透)之功效，因此其節能效果於光線穿透狀態時亦較差。 Please refer to FIG. 1 again, which is a cross-sectional view of a transparent conductive film 1 for a light-adjusting film in the prior art, comprising a base film layer 11 and a sputter film layer 13. Further, in the prior art, in the case where the area of the light-adjusting film is large, in order to improve the yield, it is necessary to lower the surface resistance of the transparent conductive film 1. When the surface resistance is to be lowered, the thickness of the sputter film layer 13 is greatly increased. As a result, the light transmittance of the transparent conductive film 1 is lowered, and the light transmittance of the entire light-adjusting film is not deteriorated. Moreover, due to the use of transparent guides for prior art dimming films The electric film material does not have the effect of Low-E (low radiation, high visible light penetration and low infrared penetration), so its energy saving effect is also poor in light penetration state.
據此，如何於顧及良率之情況下，於降低透明導電膜電阻之同時避免透明導電膜之厚度過度增加，以維持調光薄膜整體之光線穿透率，並進一步達成節能之功效，乃業界亟需努力之目標。 Accordingly, how to avoid the excessive increase in the thickness of the transparent conductive film while reducing the resistance of the transparent conductive film while taking into account the yield, in order to maintain the overall light transmittance of the light-adjusting film, and further achieve energy-saving effects, is the industry The goal of hard work is urgent.
為解決前述先前技術之問題，本發明提供了一種用於調光薄膜之導電膜結構，包含基膜層、第一透光導電膜層以及第二透光導電膜層。第一透光導電膜層設置於基膜層上，用以降低電阻值，具有第一光線折射率。第二透光導電膜層設置於第一透光導電膜層上，具有第二光線折射率。第一透光導電膜層係介於基膜層以及第二透光導電膜層間，第一光線折射率係小於第二光線折射率。 In order to solve the problems of the foregoing prior art, the present invention provides a conductive film structure for a light-adjusting film, comprising a base film layer, a first light-transmitting conductive film layer, and a second light-transmitting conductive film layer. The first light-transmissive conductive film layer is disposed on the base film layer to reduce the resistance value and has a first light refractive index. The second transparent conductive film layer is disposed on the first light-transmissive conductive film layer and has a second light refractive index. The first light-transmissive conductive film layer is interposed between the base film layer and the second light-transmitting conductive film layer, and the first light refractive index is smaller than the second light refractive index.
本發明更提供了一種用於調光薄膜之導電膜結構。導電膜結構包含基膜層、第一透光導電膜層、第二透光導電膜層以及第三透光導電膜層。第一透光導電膜層設置於基膜層上，具有第一光線折射率。第二透光導電膜層設置於第一透光導電膜層上，用以降低電阻值，具有第二光線折射率。第三透光導電膜層設置於第二透光導電膜層上，具有第三光線折射率。第一透光導電膜層係介於基膜層以及第二透光導電膜層間，第二透光導電膜層係介於第一透光導電膜層以及第三導電透光膜層間。第二光線折射率係小於第一光線折射率以及第三光線折射率。 The present invention further provides a conductive film structure for a light control film. The conductive film structure includes a base film layer, a first light-transmitting conductive film layer, a second light-transmitting conductive film layer, and a third light-transmitting conductive film layer. The first light-transmissive conductive film layer is disposed on the base film layer and has a first light refractive index. The second transparent conductive film layer is disposed on the first transparent conductive film layer to reduce the resistance value and has a second light refractive index. The third light-transmissive conductive film layer is disposed on the second light-transmissive conductive film layer and has a third light refractive index. The first light-transmitting conductive film layer is interposed between the base film layer and the second light-transmitting conductive film layer, and the second light-transmitting conductive film layer is interposed between the first light-transmitting conductive film layer and the third conductive light-transmitting film layer. The second ray refractive index is less than the first ray index and the third ray index.
本發明又提供了一種用於調光薄膜之導電膜結構。導電膜結構包含基膜層以及至少二透光導電膜總成。每一透光導電膜總成包括第一 透光導電膜層以及第二透光導電膜層。第一透光導電膜層用以降低電阻值，具有第一光線折射率。第二透光導電膜層設置於第一透光導電膜層上，具有第二光線折射率。至少二透光導電膜總成係以堆疊之方式設置於基膜層上，第一光線折射率係小於第二光線折射率。 The present invention further provides a conductive film structure for a light control film. The conductive film structure includes a base film layer and at least two light-transmissive conductive film assemblies. Each of the light-transmitting conductive film assemblies includes a first a light-transmitting conductive film layer and a second light-transmitting conductive film layer. The first light-transmissive conductive film layer is used to lower the resistance value and has a first light refractive index. The second transparent conductive film layer is disposed on the first light-transmissive conductive film layer and has a second light refractive index. At least two transparent conductive film assemblies are disposed on the base film layer in a stacked manner, and the first light refractive index is smaller than the second light refractive index.
本發明再提供了一種用於調光薄膜之導電膜結構。導電膜結構包含基膜層、第一透光導電膜層以及至少二透光導電膜總成。每一透光導電膜總成包含第二透光導電膜以及第三透光導電膜。第一透光導電膜層設置於基膜層上，具有第一光線折射率。第二透光導電膜層用以降低電阻值，具有第二光線折射率。第三透光導電膜層，設置於第二透光導電膜層上，具有第三光線折射率。至少二透光導電膜總成係以堆疊之方式設置於第一透光導電膜層上，第二光線折射率係小於第一光線折射率以及第三光線折射率。 The present invention further provides a conductive film structure for a light control film. The conductive film structure includes a base film layer, a first light-transmitting conductive film layer, and at least two light-transmitting conductive film assemblies. Each of the light-transmitting conductive film assemblies includes a second light-transmitting conductive film and a third light-transmitting conductive film. The first light-transmissive conductive film layer is disposed on the base film layer and has a first light refractive index. The second transparent conductive film layer is used to lower the resistance value and has a second light refractive index. The third light-transmissive conductive film layer is disposed on the second light-transmitting conductive film layer and has a third light refractive index. The at least two light-transmissive conductive film assemblies are disposed on the first light-transmissive conductive film layer in a stacked manner, and the second light-refractive index is smaller than the first light-refractive index and the third light-refractive index.
1‧‧‧透明導電膜 1‧‧‧Transparent conductive film
11‧‧‧基膜層 11‧‧‧ basement layer
13‧‧‧濺鍍膜層 13‧‧‧ Sputtering layer
2‧‧‧導電膜結構 2‧‧‧ Conductive film structure
20‧‧‧基膜層 20‧‧‧ basement layer
21‧‧‧第一透光導電膜層 21‧‧‧First transparent conductive film layer
22‧‧‧第二透光導電膜層 22‧‧‧Second light-transmissive conductive film layer
3‧‧‧導電膜結構 3‧‧‧ Conductive film structure
30‧‧‧基膜層 30‧‧‧ basement layer
31‧‧‧第一透光導電膜層 31‧‧‧First transparent conductive film layer
32‧‧‧第二透光導電膜層 32‧‧‧Second light-transmissive conductive film layer
33‧‧‧第三透光導電膜層 33‧‧‧The third transparent conductive film layer
4、4’‧‧‧導電膜結構 4, 4'‧‧‧ conductive film structure
40‧‧‧基膜層 40‧‧‧ basement layer
41‧‧‧透光導電模總成 41‧‧‧Transmissive conductive mold assembly
411‧‧‧第一透光導電膜層 411‧‧‧First transparent conductive film layer
412‧‧‧第二透光導電膜層 412‧‧‧Second transparent conductive film layer
5、5’‧‧‧導電膜結構 5, 5'‧‧‧ Conductive film structure
50‧‧‧基膜層 50‧‧‧ base film layer
51‧‧‧第一透光導電膜層 51‧‧‧First transparent conductive film layer
52‧‧‧透光導電膜總成 52‧‧‧Transparent conductive film assembly
521‧‧‧第二透光導電膜層 521‧‧‧Second light-transmissive conductive film layer
522‧‧‧第三透光導電膜層 522‧‧‧The third transparent conductive film layer
r1、f1、R1、F1‧‧‧第一光線折射率 R1, f1, R1, F1‧‧‧ first light refractive index
r2、f2、R2、F2‧‧‧第二光線折射率 R2, f2, R2, F2‧‧‧ second light refractive index
R3、F3‧‧‧第三光線折射率 R3, F3‧‧‧ third light refractive index
第1圖係先前技術用於調光薄膜之透明導電膜之剖面圖；第2圖係本發明之第一實施例之用於調光薄膜之導電膜結構之剖面圖；第3圖係本發明之第二實施例之用於調光薄膜之導電膜結構之剖面圖；第4A圖係本發明之第三實施例之用於調光薄膜之導電膜結構之剖面圖；第4B圖係本發明之第三實施例之用於調光薄膜之另一導電膜結構之剖面圖；第5A圖係本發明之第四實施例之用於調光薄膜之導電膜結構之剖面 圖；以及第5B圖係本發明之第四實施例之用於調光薄膜之另一導電膜結構之剖面圖。 1 is a cross-sectional view of a transparent conductive film used in a dimming film of the prior art; FIG. 2 is a cross-sectional view showing a structure of a conductive film for a light-adjusting film according to a first embodiment of the present invention; FIG. 4A is a cross-sectional view showing a structure of a conductive film for a light-adjusting film according to a third embodiment of the present invention; FIG. 4B is a view of the present invention; A cross-sectional view of another conductive film structure for a light-adjusting film according to a third embodiment; FIG. 5A is a cross-sectional view of a conductive film structure for a light-adjusting film according to a fourth embodiment of the present invention; Figure 5 and Figure 5B are cross-sectional views showing another conductive film structure for a light-adjusting film of a fourth embodiment of the present invention.
以下實施例之說明僅在於闡釋本發明，並非用以限制本發明之態樣。在以下實施例及圖式中，與本發明非直接相關的元件已省略而未繪示，而繪示於圖式中的各元件之間的尺寸關係僅為便於理解，而非用以限制為實際的實施比例。 The following examples are merely illustrative of the invention and are not intended to limit the invention. In the following embodiments and drawings, elements that are not directly related to the present invention have been omitted and are not shown, and the dimensional relationships between the elements in the drawings are only for ease of understanding, and are not intended to be limited to The actual implementation ratio.
首先，請參考第2圖，其為本發明之第一實施例之用於調光薄膜之一導電膜結構2之剖面圖。導電膜結構2包含一基膜層20、一第一透光導電膜層21以及一第二透光導電膜層22。其中，第一透光導電膜層21設置於基膜層20上，用以降低電阻值，具有一第一光線折射率r1。第二透光導電膜層22設置於第一透光導電膜層21上，具有一第二光線折射率r2。 First, please refer to FIG. 2, which is a cross-sectional view of a conductive film structure 2 for a light control film according to a first embodiment of the present invention. The conductive film structure 2 includes a base film layer 20, a first light-transmissive conductive film layer 21, and a second light-transmitting conductive film layer 22. The first transparent conductive film layer 21 is disposed on the base film layer 20 for reducing the resistance value and has a first light refractive index r1. The second light-transmissive conductive film layer 22 is disposed on the first light-transmissive conductive film layer 21 and has a second light-refractive index r2.
須特別說明者，於本實施態樣中，第一透光導電膜層21係以濺鍍之方式鍍於基膜層20上。同樣地，第二透光導電膜層22亦以濺鍍之方式鍍於第一透光導電膜層21上。惟其並非用以限制本發明導電膜層之設置方式。 Specifically, in the present embodiment, the first light-transmitting conductive film layer 21 is plated on the base film layer 20 by sputtering. Similarly, the second light-transmitting conductive film layer 22 is also plated on the first light-transmitting conductive film layer 21 by sputtering. However, it is not intended to limit the manner in which the conductive film layer of the present invention is disposed.
接著說明，第一透光導電膜層21係介於基膜層20以及第二透光導電膜層22間。第一光線折射率r1係小於第二光線折射率r2。而根據光學原理，光線先通過高折射率之材質再通過低折射率之材質，將可得到低光線反射以及高穿透之優勢，如此一來，透過前述導電膜結構2，將可在低光線反射以及高穿透之情況下，控制第一透光導電膜層21以及第二透光導電 膜層22之總厚度於較薄之範圍。 Next, the first light-transmitting conductive film layer 21 is interposed between the base film layer 20 and the second light-transmitting conductive film layer 22. The first ray refractive index r1 is smaller than the second ray refractive index r2. According to the optical principle, the light first passes through the material of high refractive index and then passes through the material of low refractive index, which can obtain the advantages of low light reflection and high penetration, so that the light conductive structure 2 can be used in low light. In the case of reflection and high penetration, the first light-transmissive conductive film layer 21 and the second light-transmitting conductive are controlled The total thickness of the film layer 22 is in a relatively thin range.
更詳細來說，較佳之實施態樣中，前述之導電膜結構2之第一透光導電膜層21之材料主要較佳係為銀，或可為任何含銀50%以上合金，且其厚度介於1奈米(nm)至30奈米間，而第二透光導電膜層22之材質係為氧化銦錫(ITO)，且其厚度介於1奈米(nm)至100奈米之間。如此一來，當第一透光導電膜層21之材質如前述為銀或任何含銀50%以上合金時，其可在極薄至透明之狀態下大幅降低表面電阻達到節能效果，同時阻隔紅外光。同樣地，由於第二層透光導電膜層22之ITO材質之光線折射率r2係大於第一層透光導電膜層21之銀材質之光線折射率r1，因此，導電膜結構2亦具有低光線反射以及高穿透之優點。 More specifically, in a preferred embodiment, the material of the first transparent conductive film layer 21 of the conductive film structure 2 is preferably silver, or may be any alloy containing more than 50% of silver, and the thickness thereof. Between 1 nm (nm) and 30 nm, and the material of the second transparent conductive film layer 22 is indium tin oxide (ITO), and the thickness thereof is between 1 nm (nm) and 100 nm. between. In this way, when the material of the first light-transmissive conductive film layer 21 is silver or any alloy containing more than 50% of silver as described above, the surface resistance can be greatly reduced in an extremely thin to transparent state to achieve an energy-saving effect while blocking infrared rays. Light. Similarly, since the refractive index r2 of the ITO material of the second transparent conductive film layer 22 is greater than the refractive index r1 of the silver material of the first transparent conductive film layer 21, the conductive film structure 2 also has a low Light reflection and high penetration.
接著，請參考第3圖，其為本發明之第二實施例之用於調光薄膜之一導電膜結構3之剖面圖。導電膜結構3包含一基膜層30、一第一透光導電膜層31、一第二透光導電膜層32以及一第三透光導電膜層33。其中，第一透光導電膜層31設置於基膜層30上，具有一第一光線折射率R1。第二透光導電膜層32設置於第一透光導電膜層31上，用以降低電阻值，具有一第二光線折射率R2。第三透光導電膜層33設置於第二透光導電膜層32上，具有一第三光線折射率R3。 Next, please refer to FIG. 3, which is a cross-sectional view showing a conductive film structure 3 for a light control film according to a second embodiment of the present invention. The conductive film structure 3 includes a base film layer 30, a first light-transmissive conductive film layer 31, a second light-transmitting conductive film layer 32, and a third light-transmitting conductive film layer 33. The first transparent conductive film layer 31 is disposed on the base film layer 30 and has a first light refractive index R1. The second light-transmissive conductive film layer 32 is disposed on the first light-transmissive conductive film layer 31 for reducing the resistance value and has a second light-refractive index R2. The third light-transmissive conductive film layer 33 is disposed on the second light-transmissive conductive film layer 32 and has a third light-refractive index R3.
須特別說明者，類似地，於本實施態樣中，第一透光導電膜層31係以濺鍍之方式鍍於基膜層30上，第二透光導電膜層32以濺鍍之方式鍍於第一透光導電膜層31上，第三透光導電膜層33以濺鍍之方式鍍於第二透光導電膜層32上。其中，第一透光導電膜層31更用以增強第二透光導電膜32以及基膜層30間之結合關係。 Specifically, in the embodiment, the first transparent conductive film layer 31 is plated on the base film layer 30 by sputtering, and the second transparent conductive film layer 32 is sputtered. The third light-transmissive conductive film layer 33 is plated on the second light-transmissive conductive film layer 32 by sputtering. The first transparent conductive film layer 31 is used to enhance the bonding relationship between the second transparent conductive film 32 and the base film layer 30.
接著說明，第一透光導電膜層31係介於基膜層30以及第二透光導電膜層32間，第二透光導電膜層32係介於第一透光導電膜層31以及第三透光導電膜層33間。第二光線折射率R2係小於第一光線折射率R1以及第三光線折射率R3。同樣地，根據光學原理，光線若依序通過高折射率材質、低折射率材質以及高折射率材質，將可進一步加強低光線反射以及高穿透之效果。 Next, the first light-transmitting conductive film layer 31 is interposed between the base film layer 30 and the second light-transmitting conductive film layer 32, and the second light-transmitting conductive film layer 32 is interposed between the first light-transmitting conductive film layer 31 and the first Between the three light-transmissive conductive film layers 33. The second ray refractive index R2 is smaller than the first ray refractive index R1 and the third ray refractive index R3. Similarly, according to the optical principle, light rays passing through a high refractive index material, a low refractive index material, and a high refractive index material can further enhance the effect of low light reflection and high penetration.
同樣地更詳細來說，較佳之實施態樣中，前述之導電膜結構3之第一透光導電膜層31之材料主要係為氧化銦錫(ITO)、氮化矽(Si3N4)、五氧化二鈮(Nb2O5)及二氧化鈦(TiO2)其中之一。第二透光導電膜層32之材質較佳為銀，或可為任何含銀50%以上合金，且其厚度介於1奈米至30奈米間。第三透光導電膜層33之材質係為氧化銦錫(ITO)，且其厚度介於1奈米至100奈米之間。 Similarly, in more detail, in the preferred embodiment, the material of the first transparent conductive film layer 31 of the conductive film structure 3 is mainly indium tin oxide (ITO) or tantalum nitride (Si 3 N 4 ). One of niobium pentoxide (Nb 2 O 5 ) and titanium dioxide (TiO 2 ). The material of the second light-transmitting conductive film layer 32 is preferably silver, or may be any alloy containing more than 50% of silver, and the thickness thereof is between 1 nm and 30 nm. The material of the third light-transmitting conductive film layer 33 is indium tin oxide (ITO), and the thickness thereof is between 1 nm and 100 nm.
如此一來，透過前述之導電膜結構3，將具有以下三優點：(1)第一透光導電膜層31可加強第二透光導電膜層32與基膜層30間之結合關係；(2)光線依序通過高折射率材質(第三透光導電膜層33)、低折射率材質(第二透光導電膜層32)以及高折射率材質(第一透光導電膜層31)，進一步加強低光線反射以及高穿透之效果；以及(3)第二透光導電膜層32之材質主要為銀時，其可在極薄至透明之狀態下大幅降低表面電阻達到節能效果，同時阻隔紅外光。 As a result, the conductive film structure 3 has the following three advantages: (1) the first light-transmitting conductive film layer 31 can strengthen the bonding relationship between the second light-transmitting conductive film layer 32 and the base film layer 30; 2) The light passes through the high refractive index material (the third light-transmitting conductive film layer 33), the low refractive index material (the second light-transmitting conductive film layer 32), and the high refractive index material (the first light-transmitting conductive film layer 31) in this order. Further, the effect of low light reflection and high penetration is further enhanced; and (3) when the material of the second light-transmitting conductive film layer 32 is mainly silver, the surface resistance can be greatly reduced in an extremely thin to transparent state to achieve energy saving effect. At the same time block infrared light.
請參考第4A圖，其為本發明之第三實施例之用於調光薄膜之一導電膜結構4之剖面圖。導電膜結構4包含一基膜層40以及至少二透光 導電膜總成41。其中，每一透光導電膜總成41包括：一第一透光導電膜層411以及一第二透光導電膜層412，第一透光導電膜層411用以降低電阻值，具有一第一光線折射率f1，第二透光導電膜層412設置於第一透光導電膜層411上，具有一第二光線折射率f2。 Please refer to FIG. 4A, which is a cross-sectional view of a conductive film structure 4 for a light control film according to a third embodiment of the present invention. The conductive film structure 4 comprises a base film layer 40 and at least two light transmissive layers Conductive film assembly 41. Each of the transparent conductive film assemblies 41 includes a first transparent conductive film layer 411 and a second transparent conductive film layer 412. The first transparent conductive film layer 411 is used to reduce the resistance value. A second light-transmissive conductive film layer 412 is disposed on the first light-transmissive conductive film layer 411 and has a second light-refractive index f2.
須特別說明者，於本實施態樣中，透光導電膜總成41之數量為二，且其主要係以濺鍍之方式鍍於基膜層40上。更進一步來說，整體觀之，導電膜結構4主要係以基模層40為基材，而第一透光導電膜層411及第二透光導電膜層412係以依序濺鍍之方式堆疊於基膜層40上。惟其並非用以限制本發明導電膜層之設置方式。 It should be particularly noted that in the present embodiment, the number of the light-transmitting conductive film assemblies 41 is two, and it is mainly plated on the base film layer 40 by sputtering. Further, as a whole, the conductive film structure 4 is mainly based on the base mold layer 40, and the first transparent conductive film layer 411 and the second transparent conductive film layer 412 are sequentially sputtered. Stacked on the base film layer 40. However, it is not intended to limit the manner in which the conductive film layer of the present invention is disposed.
接著說明，第一光線折射率f1係小於第二光線折射率f2。而根據光學原理，光線先通過高折射率之材質再通過低折射率之材質，將可得到低光線反射以及高穿透之優勢。其中，隨著疊加層數越多表面電阻值越低，而雖疊加之同時將導致光線穿透率微幅降低，惟整體Low-E之功效仍有顯著之提升。 Next, the first ray refractive index f1 is smaller than the second ray refractive index f2. According to the optical principle, the light first passes through the material of high refractive index and then passes through the material of low refractive index, which can obtain the advantages of low light reflection and high penetration. Among them, as the number of superimposed layers increases, the surface resistance value is lower, and although the superimposition will cause the light transmittance to decrease slightly, the overall Low-E effect is still significantly improved.
更詳細來說，較佳之實施態樣中，前述之導電膜結構4之第一透光導電膜層411之材料主要較佳係為銀，或可為任何含銀50%以上合金，且其厚度介於1奈米(nm)至30奈米間，而第二透光導電膜層412之材質係為氧化銦錫(ITO)，且其厚度介於1奈米(nm)至100奈米之間。如此一來，當第一透光導電膜層411之材質如前述為銀或任何含銀50%以上合金時，其可在極薄至透明之狀態下大幅降低表面電阻達到節能效果，同時阻隔紅外光。同樣地，由於第二層透光導電膜層412之ITO材質之光線折射率f2係大於第一層透光導電膜層411之銀材質之光線折射率f1，因此，導電膜 結構4亦具有低光線反射以及高穿透之優點。 More specifically, in a preferred embodiment, the material of the first transparent conductive film layer 411 of the conductive film structure 4 is preferably silver, or may be any alloy containing more than 50% of silver, and the thickness thereof. Between 1 nm (nm) and 30 nm, and the second transparent conductive film layer 412 is made of indium tin oxide (ITO) and has a thickness of from 1 nm to 100 nm. between. In this way, when the material of the first light-transmitting conductive film layer 411 is silver or any alloy containing more than 50% of silver as described above, the surface resistance can be greatly reduced in an extremely thin to transparent state to achieve an energy-saving effect while blocking infrared rays. Light. Similarly, since the refractive index f2 of the ITO material of the second transparent conductive film layer 412 is greater than the refractive index f1 of the silver material of the first transparent conductive film layer 411, the conductive film Structure 4 also has the advantage of low light reflection and high penetration.
請參考第4B圖，其為本發明之第三實施例之用於調光薄膜之另一導電膜結構4’之剖面圖。導電膜結構4’包含基膜層40以及複數透光導電膜總成41，其主要係用以例示結構中包含多組透光導電膜總成41之實施態樣。 Please refer to FIG. 4B, which is a cross-sectional view showing another conductive film structure 4' for a light control film according to a third embodiment of the present invention. The conductive film structure 4' includes a base film layer 40 and a plurality of light-transmitting conductive film assemblies 41, which are mainly used to exemplify an embodiment in which a plurality of sets of light-transmitting conductive film assemblies 41 are included in the structure.
請參考第5A圖，其為本發明之第四實施例之用於調光薄膜之一導電膜結構5之剖面圖。導電膜結構5包含一基膜層50、一第一透光導電模51以及至少二透光導電膜總成52。其中，第一透光導電膜51設置於基膜層50上，具有一第一光線折射率F1。每一透光導電膜總成52包括：一第二透光導電膜層521以及一第三透光導電膜層522，第二透光導電膜層521用以降低電阻值，具有一第二光線折射率F2，第三透光導電膜層522設置於第二透光導電膜層521上，具有一第三光線折射率F3。 Please refer to FIG. 5A, which is a cross-sectional view of a conductive film structure 5 for a light control film according to a fourth embodiment of the present invention. The conductive film structure 5 includes a base film layer 50, a first light-transmissive conductive mold 51, and at least two light-transmitting conductive film assemblies 52. The first light-transmissive conductive film 51 is disposed on the base film layer 50 and has a first light refractive index F1. Each of the transparent conductive film assemblies 52 includes a second transparent conductive film layer 521 and a third transparent conductive film layer 522. The second transparent conductive film layer 521 is used to reduce the resistance value and has a second light. The third light-transmissive conductive film layer 522 is disposed on the second light-transmissive conductive film layer 521 and has a third light-refractive index F3.
須特別說明者，於本實施態樣中，透光導電膜總成51之數量為二，且其主要係以濺鍍之方式鍍於第一透光導電模51上。更進一步來說，整體觀之，導電膜結構5主要係以基模層50為基材，而第一透光導電模51係以濺鍍之方式鍍於基模層50上，第二透光導電膜層521及第三透光導電膜層522係以依序濺鍍之方式堆疊於第一透光導電膜51上。第一透光導電膜層51更用以增強第一層第二透光導電膜521以及基膜層50間之結合關係，惟其同樣並非用以限制本發明導電膜層之設置方式。 Specifically, in the present embodiment, the number of the light-transmitting conductive film assemblies 51 is two, and is mainly plated on the first light-transmitting conductive mold 51 by sputtering. Further, as a whole, the conductive film structure 5 is mainly based on the base mold layer 50, and the first light-transmissive conductive mold 51 is plated on the base mold layer 50 by sputtering, and the second light transmission is performed. The conductive film layer 521 and the third light-transmitting conductive film layer 522 are stacked on the first light-transmitting conductive film 51 in a manner of sequential sputtering. The first light-transmissive conductive film layer 51 is used to enhance the bonding relationship between the first-layer second light-transmitting conductive film 521 and the base film layer 50, but it is also not used to limit the arrangement of the conductive film layer of the present invention.
接著說明，第二光線折射率F2係小於第一光線折射率F1以及第三光線折射率F3。根據光學原理，光線若依序通過高折射率材質、低折射率材質以及高折射率材質，將可進一步加強低光線反射以及高穿透之 效果。同樣地，隨著疊加層數越多表面電阻值越低，而雖疊加之同時將導致光線穿透率微幅降低，惟整體Low-E之功效仍有顯著之提升。 Next, the second ray refractive index F2 is smaller than the first ray refractive index F1 and the third ray refractive index F3. According to the optical principle, light rays can be further enhanced by high refractive index materials, low refractive index materials and high refractive index materials to further enhance low light reflection and high penetration. effect. Similarly, as the number of superimposed layers increases, the surface resistance value decreases, and while superimposing, the light transmittance is slightly reduced, but the overall Low-E effect is still significantly improved.
同樣地更詳細來說，較佳之實施態樣中，前述之導電膜結構5之第一透光導電膜層51之材料主要係為氧化銦錫(ITO)、氮化矽(Si3N4)、五氧化二鈮(Nb2O5)及二氧化鈦(TiO2)其中之一。第二透光導電膜層521之材質較佳為銀，或可為任何含銀50%以上合金，且其厚度介於1奈米至30奈米間。第三透光導電膜層522之材質係為氧化銦錫(ITO)，且其厚度介於1奈米至100奈米之間。 Similarly, in more detail, in the preferred embodiment, the material of the first transparent conductive film layer 51 of the conductive film structure 5 is mainly indium tin oxide (ITO) or tantalum nitride (Si 3 N 4 ). One of niobium pentoxide (Nb 2 O 5 ) and titanium dioxide (TiO 2 ). The material of the second light-transmitting conductive film layer 521 is preferably silver, or may be any alloy containing 50% or more of silver, and has a thickness of between 1 nm and 30 nm. The material of the third light-transmitting conductive film layer 522 is indium tin oxide (ITO) and has a thickness of between 1 nm and 100 nm.
如此一來，前述之導電膜結構5同樣具有以下三優點：(1)第一透光導電膜層51可加強第一層第二透光導電膜層521與基膜層50間之結合關係；(2)光線依序通過高折射率材質(第三透光導電膜層522)、低折射率材質(第二透光導電膜層521)以及高折射率材質(第一透光導電膜層51)，進一步加強低光線反射以及高穿透之效果；以及(3)第二透光導電膜層521之主要材質為銀時，其可在極薄至透明之狀態下大幅降低表面電阻達到節能效果，同時阻隔紅外光。 As a result, the conductive film structure 5 has the following three advantages: (1) the first transparent conductive film layer 51 can strengthen the bonding relationship between the first transparent conductive film layer 521 and the base film layer 50; (2) The light sequentially passes through the high refractive index material (the third light-transmitting conductive film layer 522), the low refractive index material (the second light-transmitting conductive film layer 521), and the high refractive index material (the first light-transmitting conductive film layer 51) ), further enhancing the effect of low light reflection and high penetration; and (3) when the main material of the second light-transmitting conductive film layer 521 is silver, the surface resistance can be greatly reduced in an extremely thin to transparent state to achieve energy saving effect. While blocking infrared light.
請參考第5B圖，其為本發明之第四實施例之用於調光薄膜之另一導電膜結構5’之剖面圖。導電膜結構5’包含基膜層50以及複數透光導電膜總成51，其主要係用以例示結構中包含多組透光導電膜總成51之實施態樣。 Please refer to FIG. 5B, which is a cross-sectional view showing another conductive film structure 5' for a light control film according to a fourth embodiment of the present invention. The conductive film structure 5' includes a base film layer 50 and a plurality of light-transmissive conductive film assemblies 51, which are mainly used to exemplify a configuration in which a plurality of sets of light-transmitting conductive film assemblies 51 are included in the structure.
綜上所述，本發明提供一種具有低表面電阻、高光線穿透性、低輻射(可見光高穿透以及紅外線低穿透)以及節能功能之導電膜結構，因此，當其使用於調光薄膜時，將可大幅提升調光薄膜整體之價值。 In summary, the present invention provides a conductive film structure having low surface resistance, high light transmittance, low radiation (high visible light penetration and low infrared light penetration), and energy saving function, and therefore, when used for a light control film At the time, the overall value of the dimming film will be greatly increased.
惟上述實施例所述之結構、材料以及尺寸僅為例示性說明本發明之較佳實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技藝之人士可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。 The structures, materials, and dimensions of the present invention are merely illustrative of the preferred embodiments of the present invention and the technical features of the present invention are not intended to limit the scope of the present invention. It is intended that any changes or equivalents of the invention may be made by those skilled in the art. The scope of the invention should be determined by the scope of the claims.
2‧‧‧導電膜結構 2‧‧‧ Conductive film structure
20‧‧‧基膜層 20‧‧‧ basement layer
21‧‧‧第一透光導電膜層 21‧‧‧First transparent conductive film layer
22‧‧‧第二透光導電膜層 22‧‧‧Second light-transmissive conductive film layer
r1‧‧‧第一光線折射率 R1‧‧‧first light index
r2‧‧‧第二光線折射率 R2‧‧‧second light refractive index
Claims (22)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104124364A TW201615405A (en) | 2014-10-30 | 2015-07-28 | Conductive film structure for use in smart-film and polymer-dispersed liquid crystal |
| CN201510648120.7A CN105679416A (en) | 2014-10-30 | 2015-10-09 | Conducting film structure for dimming film |
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| TW103137547 | 2014-10-30 | ||
| TW104124364A TW201615405A (en) | 2014-10-30 | 2015-07-28 | Conductive film structure for use in smart-film and polymer-dispersed liquid crystal |
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| TW201615405A true TW201615405A (en) | 2016-05-01 |
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| US10663819B2 (en) | 2018-08-07 | 2020-05-26 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Opposite substrate and preparation method thereof, and display device |
| CN108919555A (en) * | 2018-08-07 | 2018-11-30 | 深圳市华星光电技术有限公司 | Opposite substrate and preparation method thereof, display device |
| TWI676924B (en) * | 2018-11-05 | 2019-11-11 | 友達光電股份有限公司 | Touch display device |
| JP7395952B2 (en) * | 2019-10-23 | 2023-12-12 | Ｔｏｐｐａｎホールディングス株式会社 | Light control sheet and light control device |
| CN112526650A (en) * | 2020-12-09 | 2021-03-19 | 浙江日久新材料科技有限公司 | Low impedance type ITO conductive film |
| CN115061307A (en) * | 2022-06-23 | 2022-09-16 | 珠海兴业新材料科技有限公司 | Low-halation electric control dimming film and preparation method and application thereof |
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| JP2001052529A (en) * | 1999-08-03 | 2001-02-23 | Mitsui Chemicals Inc | Transparent conductive thin film laminate |
| JP2001179868A (en) * | 1999-12-27 | 2001-07-03 | Nitto Denko Corp | Method for manufacturing transparent laminate |
| JP2002015623A (en) * | 2000-04-27 | 2002-01-18 | Mitsui Chemicals Inc | Transparent electrode |
| JP2001353802A (en) * | 2000-06-14 | 2001-12-25 | Nitto Denko Corp | Transparent laminate and filter for plasma display panel |
| JP2004296140A (en) * | 2003-03-25 | 2004-10-21 | Mitsui Chemicals Inc | Transparent conductive thin film laminate |
| EP2192828A1 (en) * | 2007-09-19 | 2010-06-02 | Asahi Glass Company, Limited | Conductive laminate |
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