CN104526890A - Sheave for multi-line cutting - Google Patents
Sheave for multi-line cutting Download PDFInfo
- Publication number
- CN104526890A CN104526890A CN201410763924.7A CN201410763924A CN104526890A CN 104526890 A CN104526890 A CN 104526890A CN 201410763924 A CN201410763924 A CN 201410763924A CN 104526890 A CN104526890 A CN 104526890A
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- China
- Prior art keywords
- sheave
- cutting
- line
- dovetail groove
- cut
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention provides a sheave for multi-line cutting. A slot in the sheave is an isosceles trapezoid slot of which the bottom edge nearby the center of the sheave is narrow and the top side far away from the center of the sheave is wide; a cutting line is a nickel plating steel wire, the dimension ratio of the wire diameter of the nickel plating steel wire to the width of the bottom edge of the trapezoid slot is not less than 0.85 and not greater than 1.2, and the ratio of the slotting depth of the trapezoid slot to the wire diameter of the cutting line is 1.05. The sheave provided by the invention has the significant effects of ensuring the surface quality of a silicon carbide cutting slice, the thickness deviation of the cutting slice and the operating stability of a cutting process, and improving the quantity of wafers of single silicon carbide crystal; in addition, the service life of the sheave can be prolonged effectively, and the cost in the process of producing the silicon carbide crystal in batches can be reduced.
Description
Technical field
The invention belongs to silicon carbide wafer cutting technique field, particularly relate to a kind of multi-wire saw sheave.
Background technology
For realizing the batch of single-crystal silicon carbide from crystal to wafer, steady production, multi-wire saw is absolutely necessary technological process, and multi-line cutting process significantly can affect the quality of cutting blade.The quality (surface saw line situation, thickness deviation, cutting blade inclination angle) of carborundum cutting blade can make a significant impact the wafer output quantity of single-crystal silicon carbide crystal, the quality of EPI-ready (holding box namely to use) wafer.
Multi-wire saw sheave (roller) is important auxiliary material in cutting technique process, can make a significant impact the cut quality of carborundum cutting blade, and thus, the sheave structural design of science is significant for the quality improving carborundum cutting blade.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of multi-wire saw sheave improving carborundum cut quality.
For solving the problem, the technical solution used in the present invention: a kind of multi-wire saw sheave, the groove on described sheave is narrow near the base of core wheel, the isosceles trapezoid groove that the top margin away from core wheel is wide; Line of cut used is nickel plating steel wire, and described nickel plating steel wire wire diameter is more than or equal to 0.85 with the size ratio of described dovetail groove base width and is less than or equal to 1.2, and the groove depth of described dovetail groove is more than or equal to 1.05 with the ratio of line of cut wire diameter used.
Line of cut is for apply the adamantine sand line of certain granules degree outward at steel wire, described sand line wire diameter is more than or equal to 0.95 with the size ratio of described dovetail groove base width and is less than or equal to 1.05, and the groove depth of described dovetail groove is more than or equal to 1.05 with the ratio of line of cut wire diameter used.
Described sand line wire diameter is 0.23mm, dovetail groove opening angle: 75 degree, dovetail groove groove depth: 0.425mm, dovetail groove A/F about: 0.7mm.
Described sand line wire diameter is 0.25mm, dovetail groove opening angle: 80 degree, dovetail groove groove depth: 0.450mm; Dovetail groove A/F is about: 0.8mm.
Principles and methods:
Dovetail groove opening angle: line of cut wire diameter, line of cut material have direct decisive action for the opening angle of dovetail groove, wherein:
1) line of cut material: at present, the line of cut for single-crystal silicon carbide cutting comprises 2 kinds, is respectively common nickel plating steel wire (also known as steel wire) and the steel wire skin coating adamantine line of cut of certain granules degree (also known as sand line).
2) line of cut wire diameter: for ensureing smooth, the even running of line of cut, reduce the probability that cutting process interrupt line occurs, obtain the carborundum cutting blade of high accuracy thickness, " sheave clamp " phenomenon must be avoided to occur, need guarantee that the size ratio (D1:D2) of line of cut steel wire wire diameter D1 and dovetail groove slot bottom width D2 is in 0.85 ~ 1.2 scope.To compare steel wire, the sheave friction of diamond to macromolecular material of sand line electroplating surface is large, the heat that friction discharges is also large, thus " sticky line " problem between sand line and sheave is more easily caused, for reducing the friction between sheave and sand line, dovetail groove opening angle needs special design, ensure sand line wire diameter D1 ' and dovetail groove slot bottom width D2 size ratio (D1 ': D2) in 0.95 ~ 1.05 scope;
Dovetail groove groove depth: for ensureing that line of cut runs along particular track, there is not line of cut " wire jumper " problem, need to ensure that line of cut can free-running operation in the sheave of certain depth, need guarantee that dovetail groove groove depth H1 is greater than 1.05 with line of cut wire diameter D1/D1 ' size ratio (H1:D1 and H1:D1 '), thus line of cut wire diameter is the important factor in order of dovetail groove groove depth;
Dovetail groove groove width: except cutting blade thickness effect, the cross-notching width such as dovetail groove opening angle and groove depth have material impact.Dovetail groove groove width is one of factor affecting line of cut " wire jumper ".
The advantage that the present invention has and good effect are: the sheave obtained through design of the present invention, for ensureing the surface quality of carborundum cutting blade, cutting blade thickness deviation, cutting technique operation stability, improve the quantity etc. wafer of monolithic carborundum crystals and have remarkable result; In addition, effectively can extend sheave service life, reduce the cost in volume production of silicon carbide wafer process.
Accompanying drawing explanation
Fig. 1 is structure principle chart of the present invention;
In figure: D1/D1 '-wire diameter, D2-slot bottom width, H1-groove depth, α-dovetail groove opening angle, w-dovetail groove A/F.
Detailed description of the invention
Now 1 couple of the present invention carries out comparatively detailed description with reference to the accompanying drawings:
Embodiment 1:
Utilize the design mentioned in this patent, devise cutting sheave 1 and overlap, design parameter is: 1) dovetail groove opening angle α: 75 degree; 2) dovetail groove groove depth H1:0.425mm; 3) dovetail groove A/F is about w:0.7mm.
By this sheave on the ripe cutting machine of industrialization, for the cutting of silicon carbide single crystal, line of cut used is the sand line of 0.23mm, and sliced crystal length is 30mm, and it is as follows that trial cut cuts result:
Cutting ruuning situation: sheave is about 120H service time; In cutting process, cutting tension force is steady, and the tension variation value for line side and take-up side is all less than 2.5N; There is not the line of cut broken string situation because " sheave clamp " causes; Line of cut " wire jumper " phenomenon is there is not in cutting process;
After cutting, 5 dot thickness are poor: after cutting, wafer five dot thickness difference is less than 5 microns;
Cutting rear surface quality: after cutting, wafer surface roughness Ra is in 0.9 ~ 1.1 micrometer range;
Utilize the cutting effect of this sheave, relative to the sheave cutting effect of cutting machine to factory, have and clearly improve.
Embodiment 2:
Utilize the design mentioned in this patent, devise cutting sheave 1 and overlap, be specially: 1) dovetail groove opening angle α: 80 degree; 2) dovetail groove groove depth H1:0.450mm; 3) dovetail groove A/F is about w:0.8mm.
By this sheave on the ripe cutting machine of industrialization, for the cutting of silicon carbide single crystal, line of cut used is the sand line of 0.25mm, and sliced crystal length is 30mm, and it is as follows that trial cut cuts result:
Cutting ruuning situation: sheave is about 120H service time; In cutting process, cutting tension force is steady, and the tension variation value for line side and take-up side is all less than 2.5N; There is not the line of cut broken string situation because " sheave clamp " causes; Line of cut " wire jumper " phenomenon is there is not in cutting process;
After cutting, 5 dot thickness are poor: after cutting, wafer five dot thickness difference is less than 5 microns;
Cutting rear surface quality: after cutting, wafer surface roughness Ra is in 0.95 ~ 1.2 micrometer range;
Utilize the cutting effect of this sheave, relative to the sheave cutting effect of cutting machine to factory, have and clearly improve.
Embodiment 3:
Utilize the design that this patent is mentioned, devise cutting sheave 1 and overlap, be specially: 1) dovetail groove opening angle α: 65 degree; 2) dovetail groove groove depth H1:0.20mm; 3) dovetail groove A/F is about w:0.30mm.
By this sheave on the ripe cutting machine of industrialization, for the cutting of silicon carbide single crystal, line of cut used is the steel wire of 0.18mm, and sliced crystal length is 15mm, and it is as follows that trial cut cuts result:
Cutting ruuning situation: sheave is about 100H service time; In cutting process, cutting tension force is steady, and the tension variation value for line side and take-up side is all less than 2.5N; There is not the line of cut broken string situation because " sheave clamp " causes; Line of cut " wire jumper " phenomenon is there is not in cutting process;
After cutting, 5 dot thickness are poor: after cutting, average 3 microns of wafer five dot thickness difference;
Cutting rear surface quality: after cutting, wafer surface roughness Ra is in 0.5 ~ 0.8 micrometer range.
Utilize the cutting effect of this sheave, relative to the sheave cutting effect of cutting machine to factory, have and clearly improve.
Embodiment 4:
Overlap with the cutting sheave 1 of prior art, be specially: 1) dovetail groove opening angle α: 90 degree; 2) dovetail groove groove depth H1:0.25mm; 3) dovetail groove A/F is about w:0.55mm.
By this sheave on the ripe cutting machine of industrialization, for the cutting of silicon carbide single crystal, line of cut used is the sand line of 0.25mm, and sliced crystal length is 15mm, and it is as follows that trial cut cuts result:
Cutting ruuning situation: sheave is about 50H service time; In cutting process, cutting tension force is steady, and the tension variation value for line side and take-up side is all less than 2.5N; There is not the line of cut broken string situation because " sheave clamp " causes; But, there is line of cut " wire jumper " phenomenon in cutting process, and sheave generation broadening, reduce sheave service life;
After cutting, 5 dot thickness are poor: after cutting, average 10 microns of wafer five dot thickness difference;
Cutting rear surface quality: after cutting, wafer surface roughness Ra is in 0.95 ~ 1.2 micrometer range.
Embodiment 1,2,3 all has obvious improvement relative to embodiment 4 parameters of prior art and performance.
Above embodiments of the invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the scope of the invention change and improve, and all should still belong within this patent covering scope.
Claims (4)
1. a multi-wire saw sheave, is characterized in that: the groove on described sheave is narrow near the base of core wheel, the isosceles trapezoid groove that the top margin away from core wheel is wide; Line of cut used is nickel plating steel wire, and described nickel plating steel wire wire diameter is more than or equal to 0.85 with the size ratio of described dovetail groove base width and is less than or equal to 1.2, and the groove depth of described dovetail groove is more than or equal to 1.05 with the ratio of line of cut wire diameter used.
2. multi-wire saw sheave according to claim 1, it is characterized in that: line of cut is for apply the adamantine sand line of certain granules degree outward at steel wire, described sand line wire diameter is more than or equal to 0.95 with the size ratio of described dovetail groove base width and is less than or equal to 1.05, and the groove depth of described dovetail groove is more than or equal to 1.05 with the ratio of line of cut wire diameter used.
3. multi-wire saw sheave according to claim 2, is characterized in that: described sand line wire diameter is 0.23mm, dovetail groove opening angle: 75 degree, dovetail groove groove depth: 0.425mm, dovetail groove A/F about: 0.7mm.
4. multi-wire saw sheave according to claim 2, is characterized in that: described sand line wire diameter is 0.25mm, dovetail groove opening angle: 80 degree, dovetail groove groove depth: 0.450mm; Dovetail groove A/F is about: 0.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410763924.7A CN104526890A (en) | 2014-12-11 | 2014-12-11 | Sheave for multi-line cutting |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410763924.7A CN104526890A (en) | 2014-12-11 | 2014-12-11 | Sheave for multi-line cutting |
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| Publication Number | Publication Date |
|---|---|
| CN104526890A true CN104526890A (en) | 2015-04-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410763924.7A Pending CN104526890A (en) | 2014-12-11 | 2014-12-11 | Sheave for multi-line cutting |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11123648A (en) * | 1997-10-27 | 1999-05-11 | Taiheiyo Cement Corp | Multiple groove roller for wire saw |
| CN201287402Y (en) * | 2008-08-12 | 2009-08-12 | 中国电子科技集团第四十五研究所 | Home roll of multi-lane cutting machine |
| CN101659089A (en) * | 2008-08-28 | 2010-03-03 | 上海九晶电子材料股份有限公司 | Method for slotting guide roller of multi-line cutting machine |
| JP2011000686A (en) * | 2009-06-19 | 2011-01-06 | Mitsubishi Electric Corp | Multiple wire saw and method for manufacturing wafer using the same |
| JP2011079073A (en) * | 2009-10-05 | 2011-04-21 | Kanai Hiroaki | Manufacturing method of fixed abrasive grain type saw wire |
| CN202367872U (en) * | 2011-11-21 | 2012-08-08 | 邢台晶龙电子材料有限公司 | Wire guiding wheel for multi-wire sawing machine |
-
2014
- 2014-12-11 CN CN201410763924.7A patent/CN104526890A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11123648A (en) * | 1997-10-27 | 1999-05-11 | Taiheiyo Cement Corp | Multiple groove roller for wire saw |
| CN201287402Y (en) * | 2008-08-12 | 2009-08-12 | 中国电子科技集团第四十五研究所 | Home roll of multi-lane cutting machine |
| CN101659089A (en) * | 2008-08-28 | 2010-03-03 | 上海九晶电子材料股份有限公司 | Method for slotting guide roller of multi-line cutting machine |
| JP2011000686A (en) * | 2009-06-19 | 2011-01-06 | Mitsubishi Electric Corp | Multiple wire saw and method for manufacturing wafer using the same |
| JP2011079073A (en) * | 2009-10-05 | 2011-04-21 | Kanai Hiroaki | Manufacturing method of fixed abrasive grain type saw wire |
| CN202367872U (en) * | 2011-11-21 | 2012-08-08 | 邢台晶龙电子材料有限公司 | Wire guiding wheel for multi-wire sawing machine |
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Application publication date: 20150422 |