CN104521011A - 氮化物半导体元件 - Google Patents

氮化物半导体元件 Download PDF

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Publication number
CN104521011A
CN104521011A CN201380041331.3A CN201380041331A CN104521011A CN 104521011 A CN104521011 A CN 104521011A CN 201380041331 A CN201380041331 A CN 201380041331A CN 104521011 A CN104521011 A CN 104521011A
Authority
CN
China
Prior art keywords
layer
nitride semiconductor
electron supply
supply layer
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380041331.3A
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English (en)
Chinese (zh)
Inventor
月原政志
三好晃平
川崎宏治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Publication of CN104521011A publication Critical patent/CN104521011A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides

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  • Led Devices (AREA)
CN201380041331.3A 2012-08-31 2013-08-29 氮化物半导体元件 Pending CN104521011A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-191088 2012-08-31
JP2012191088A JP2014049595A (ja) 2012-08-31 2012-08-31 窒化物半導体素子
PCT/JP2013/073106 WO2014034762A1 (ja) 2012-08-31 2013-08-29 窒化物半導体素子

Publications (1)

Publication Number Publication Date
CN104521011A true CN104521011A (zh) 2015-04-15

Family

ID=50183567

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380041331.3A Pending CN104521011A (zh) 2012-08-31 2013-08-29 氮化物半导体元件

Country Status (5)

Country Link
US (1) US20150228857A1 (https=)
JP (1) JP2014049595A (https=)
CN (1) CN104521011A (https=)
TW (1) TW201411874A (https=)
WO (1) WO2014034762A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102175320B1 (ko) * 2014-04-07 2020-11-06 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245555A (ja) * 2005-02-07 2006-09-14 Showa Denko Kk 透光性電極
JP2010219269A (ja) * 2009-03-17 2010-09-30 Toshiba Corp 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4356555B2 (ja) * 1998-03-12 2009-11-04 日亜化学工業株式会社 窒化物半導体素子
KR100631981B1 (ko) * 2005-04-07 2006-10-11 삼성전기주식회사 수직구조 ３족 질화물 발광 소자 및 그 제조 방법
JP2010087217A (ja) * 2008-09-30 2010-04-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子およびその製造方法
JP5644996B2 (ja) * 2009-09-30 2014-12-24 国立大学法人三重大学 窒化物光半導体素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245555A (ja) * 2005-02-07 2006-09-14 Showa Denko Kk 透光性電極
JP2010219269A (ja) * 2009-03-17 2010-09-30 Toshiba Corp 半導体素子、半導体装置、半導体ウェーハ及び半導体結晶の成長方法
JP2011018869A (ja) * 2009-06-09 2011-01-27 Nichia Corp 窒化物半導体素子

Also Published As

Publication number Publication date
US20150228857A1 (en) 2015-08-13
TW201411874A (zh) 2014-03-16
WO2014034762A1 (ja) 2014-03-06
JP2014049595A (ja) 2014-03-17

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