CN104517886B - A kind of forming method of fleet plough groove isolation structure - Google Patents
A kind of forming method of fleet plough groove isolation structure Download PDFInfo
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- CN104517886B CN104517886B CN201310456823.0A CN201310456823A CN104517886B CN 104517886 B CN104517886 B CN 104517886B CN 201310456823 A CN201310456823 A CN 201310456823A CN 104517886 B CN104517886 B CN 104517886B
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- oxide layer
- isolation structure
- forming method
- groove isolation
- plough groove
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Abstract
The present invention provides a kind of forming method of fleet plough groove isolation structure, and it includes：Substrate is provided, cushion oxide layer and silicon nitride layer are sequentially formed with the substrate, the opening for exposing substrate is formed in the cushion oxide layer and silicon nitride layer；Shallow trench is formed over the substrate along opening；Form the protection oxide layer on the surface of the covering shallow trench；Form the covering protection oxide layer and fill the first oxide layer of the shallow trench；It is etched back to first oxide layer；Form the supplement oxide layer of protection oxide layer described in covering part；Form the second oxide layer of the covering protection oxide layer and supplement oxide layer；The first oxide layer, the second oxide layer and protection oxide layer are planarized until exposing the silicon nitride layer；Remove the silicon nitride layer.The method can avoid the change of the device electric property produced because top side wall silica is damaged, and improve the insulating properties of STI, prevent and treat element leakage.
Description
【Technical field】
The present invention relates to semiconductor design and manufacturing technology field, more particularly to a kind of formation side of fleet plough groove isolation structure
Method.
【Background technology】
With the continuous diminution of feature sizes of semiconductor devices, the area of isolation between device will also be carried out accordingly therewith
Reduce, for the element below 0.18 μm, mostly using STI（Shallow trench isolation, shallow trench isolation）Every
From technology, mainly etching, the growth of active region sidewalls silica, the filling of STI internal oxidition silicon including STI of its processing step.
And for some high tension apparatus products, such as sti trench groove it is relatively deep (>8000 angstroms), then the filling of STI internal oxiditions silicon is highly difficult, if
Only with step filling, then have empty generation in STI, therefore for such product, filling process is refined as three
Sub-step, its schematic diagram are filled for the first time as shown in figure 1, being（b）, be etched back to（c）, second fill（d）.Wherein it is etched back to
Gap width bubble in STI is big after step fills the first step, so as to fill provide help for second step.
Due to the narrower width of sti trench groove, if being etched back to the etching extent of step not enough, the tired of second step filling can be caused
The generation of difficult and hole.If etching extent is excessive, the damage of the active region sidewalls silica as shown in Fig. 2 schematic diagrames can be caused again
Wound.As shown in Fig. 3 schematic diagrames and Fig. 4 photos, the partial oxidation silicon on active region sidewalls top is fallen or thinning by acid bubble（Just
Normal 370 angstroms of region, then only less than 300 angstroms at loss）.This damage can cause the change of device electric property, reduce STI's
Insulating properties, cause element leakage, influence yield.
Therefore, it is necessary to provide a kind of improved technical scheme to overcome above mentioned problem.
【The content of the invention】
Improve the method that active region sidewalls silica is damaged it is an object of the invention to provide a kind of, so that it is rotten to compensate wet method
Damage of the erosion step to side wall silicon oxide, makes top side wall and bottom oxide silicon thickness close, prevents top area from leaking electricity.
In order to solve the above problems, according to an aspect of the present invention, the present invention provides a kind of fleet plough groove isolation structure
Forming method, it includes：Substrate is provided, cushion oxide layer and silicon nitride layer, the pad oxygen are sequentially formed with the substrate
Change the opening for being formed in layer and silicon nitride layer and exposing substrate；
Shallow trench is formed over the substrate along opening；
Form the protection oxide layer on the surface of the covering shallow trench；
Form the covering protection oxide layer and fill the first oxide layer of the shallow trench；
It is etched back to first oxide layer；
Form the supplement oxide layer of protection oxide layer described in covering part；
Form the second oxide layer of the covering protection oxide layer and supplement oxide layer；
The first oxide layer, the second oxide layer and protection oxide layer are planarized until exposing the silicon nitride layer；
Remove the silicon nitride layer.
Used as a preferred embodiment of the invention, the formation process of the protection oxide layer is thermal oxidation technology.
Used as a preferred embodiment of the invention, the thickness of the protection oxide layer is 300 angstroms.
Used as a preferred embodiment of the invention, the formation process of first oxide layer is high-density plasma
Chemical vapor deposition method.
Used as a preferred embodiment of the invention, the method that is etched back to is for wet etching.
Used as a preferred embodiment of the invention, the wet etching is using the method for hydrofluoric acid dips.
Used as a preferred embodiment of the invention, the formation process of the supplement oxide layer is thermal oxidation technology.
Used as a preferred embodiment of the invention, the thermal oxidation technology uses the thermally grown mode of boiler tube.
Used as a preferred embodiment of the invention, the formation process of second oxide layer is high-density plasma
Chemical vapor deposition method.
Compared with prior art, the forming method of the fleet plough groove isolation structure in the present invention, in STI filling steps
Point three steps are completed, and are etched back to after step wherein, the step of increased one formation supplement oxide layer, make active region sidewalls top
Portion's thinning or exposed region growing that is corroded goes out new thermal oxidation silicon, so as to compensate be etched back to part sidewall oxidation in step
The damage of silicon, finally makes top side wall be reached close to consistent effect with bottom oxide silicon thickness, to prevent device electric property
Change, reduce the insulating properties of STI, it is to avoid leak electricity in top side wall region.
【Brief description of the drawings】
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will use needed for embodiment description
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill of field, without having to pay creative labor, other can also be obtained according to these accompanying drawings
Accompanying drawing.Wherein：
Fig. 1 is shallow trench fill process schematic diagram in STI technique of the prior art；
Fig. 2 is in shallow trench fill process in STI technique of the prior art, wall protection oxide layer deleted areas in side are illustrated
Figure；
Fig. 3 is in shallow trench fill process in STI technique of the prior art, side wall protects oxide layer deleted areas section
Schematic diagram；
Fig. 4 is A positions enlarged diagram in Fig. 3；
Fig. 5 is a kind of forming method flow chart in one embodiment of the fleet plough groove isolation structure in the present invention；With,
Fig. 6 is shallow trench fill process schematic diagram in the STI technique in the present invention.
【Specific embodiment】
It is below in conjunction with the accompanying drawings and specific real to enable the above objects, features and advantages of the present invention more obvious understandable
The present invention is further detailed explanation to apply mode.
First, " one embodiment " or " embodiment " referred to herein refers to that may be included at least one realization side of the invention
Special characteristic, structure or characteristic in formula." in one embodiment " that different places occur in this manual not refers both to
Same embodiment, nor the single or selective embodiment mutually exclusive with other embodiment.
Secondly, the present invention is described in detail using schematic diagram etc., when the embodiment of the present invention is described in detail, for purposes of illustration only,
Representing the profile of device architecture can disobey general ratio and make partial enlargement, and the schematic diagram is example, and it is herein not
The scope of protection of the invention should be limited.Additionally, the three dimensions Fig. 5 that should include length, width and depth in actual fabrication is
The forming method of a kind of fleet plough groove isolation structure in present invention flow chart in one embodiment, during Fig. 6 is the present invention
Shallow trench fill process schematic diagram in STI technique.One embodiment of the present of invention is described in detail with reference to Fig. 6, such as
Shown in Fig. 5, the forming method 100 comprises the following steps.
Step 110, there is provided substrate, is sequentially formed with cushion oxide layer and silicon nitride layer, the pad oxygen on the substrate
Change the opening for being formed in layer and silicon nitride layer and exposing substrate（It is not shown）.
Specifically, the substrate（It is not shown）For providing platform for subsequent technique, the substrate can be served as a contrast selected from N-type silicon
Bottom, P-type silicon substrate, the silicon on insulating barrier（SOI）Deng substrate.
The cushion oxide layer（It is not shown）Material can be silica, and optional thermal oxidation technology is formed.The pad
Oxide layer can provide cushion to form the silicon nitride layer.Specifically, the silicon nitride layer directly formed onto substrate by
Dislocation is caused in substrate surface compared with conference in stress, and cushion oxide layer is formed between substrate and silicon nitride, it is to avoid directly
Silicon nitride layer is formed on substrate can produce the shortcoming of dislocation, and cushion oxide layer to be also used as subsequently removing nitration case step
Etching stop layer in rapid.
The silicon nitride layer（It is not shown）Can select HDP (high dense plasma, high-density plasma chemical gas
Mutually deposit) technique.The silicon nitride layer as subsequent planarization stop-layer.
Photoetching offset plate figure corresponding with opening is formed on the silicon nitride layer surface（It is not shown）, with the photoetching offset plate figure
It is mask, using plasma etching technics is sequentially etched silicon nitride layer and cushion oxide layer, until forming opening, forms opening
Afterwards using cineration technics or chemical reagent removal technique removal photoetching offset plate figure.
Step 120, shallow trench is formed along opening over the substrate（It is not shown）.
Specifically, forming the shallow trench along opening plasma etch process.
Step 130, with reference to shown in figure in Fig. 6 I, forms the protection oxide layer 210 on the surface of the covering shallow trench 220,
Because Fig. 6 is generalized section, and subsequently the shallow trench 220 with the only protection oxide layer 210 of relevant property of the invention is open
Sidewall sections, therefore protection oxide layer 210 illustrate only shallow trench 220 opening sidewall sections）.
Specifically, the formation process of the protection oxide layer 210 is thermal oxidation technology.The thickness of the protection oxide layer 210
Spend is 300 angstroms.The thermal oxidation technology can select the thermally grown mode of boiler tube.
Above step is one kind that STI isolation technologies are commonly used, but has been disclosed for many STI isolation skills in the prior art
Art, is just not repeated to describe here.Needs know, from for certain angle of the invention, the present invention is not closed especially
More than the heart step such as growth of etching and active region sidewalls silica, as long as having the structure of shallow trench 220 and protection oxygen can be formed
Change layer 210.
Step 140, with reference to shown in figure in Fig. 6 II, forms the covering protection oxide layer 210 and fills the shallow trench
220 the first oxide layer 230.
Specifically, the formation process of first oxide layer 230 is high density plasma CVD technique.
Step 150, with reference to shown in figure in Fig. 6 III, is etched back to first oxide layer, now the protection oxidation of partial sidewall
The missing of layer 210 or thinning 240.
Specifically, the method that is etched back to is for wet etching, the wet etching can be using the method for hydrofluoric acid dips.
First oxide layer 230 positioned at interface compares evacuation, is easily corroded by chemical reagent, forms gutter.
Therefore when being etched back to, the first oxide layer 230 in the protection oxide layer 210 of part is etched, and makes the protection oxide layer
210 be subject to chemical reagent erosions so that missing or thinning 240.
Step 160, with reference to shown in figure in Fig. 6 IV, forms the supplement oxide layer of protection oxide layer 210 described in covering part
250。
Specifically, formed covering part described in protection oxide layer 210 lack or the surface of thinning area 240 supplement oxide layer
250.The formation process of the supplement oxide layer 250 is thermal oxidation technology, and the thermal oxidation technology can be thermally grown using boiler tube
Mode.
Specifically, at being 1100 DEG C in temperature, making oxygen and active region sidewalls silicon react, silica is generated.By
Silica at the top of active region sidewalls be corroded it is thinning or exposed, therefore oxygen be easier through residual it is relatively thin
The pasc reaction of silica and active region sidewalls, and the region for not being corroded, side wall silicon oxide are very thick, and in STI also
There is HDP silica to cover, therefore oxygen cannot pass through side wall silicon oxide and pasc reaction, therefore final effect is active region sidewalls
The thinning or exposed region in top can grow new thermal oxidation silicon, so as to compensate for wet etch step partial sidewall oxygen
The damage of SiClx.Because sidewall bottom will not grow new silica, final top side wall and bottom oxide silicon thickness reach
Close to consistent effect.
Step 170, with reference to shown in figure in Fig. 6 V, forms the covering protection oxide layer 210 and supplements oxide layer 250
Second oxide layer 260.
Specifically, forming the covering protection oxide layer 210 and supplement oxide layer 250 and filling the He of shallow trench 220
Second oxide layer 260 of the opening, the formation process of second oxide layer 260 is heavy for high-density plasma chemical gas phase
Product technique.
Step 180, the first oxide layer 230 of planarization, the second oxide layer 260 and protection oxide layer 210 are until expose institute
State silicon nitride layer（It is not shown）.
Specifically, passing through CMP process（CMP）Described is polished since the surface of the second oxide layer 260
Dioxide layer 260, protection oxide layer 210 and first oxide layer 230, until exposing the silicon nitride layer.
Step 190, removes the silicon nitride layer（It is not shown）.
Specifically, the technique of removal silicon nitride layer can be chemical reagent removal technique.
From for another angle, the technique of step 180 and step 190 is also not belonging to emphasis of the invention, and it can be adopted
Completed with existing various techniques, therefore in order to protrude emphasis of the invention, about step 180 and the concrete technology of step 190
It is not described in detail herein.
Those of ordinary skill in art it should be appreciated that, the features of the present invention or the first purpose are：
For the product that STI three steps of filling point are completed, wherein after wet etching sub-step, increase by one thermally grown step of boiler tube
Suddenly, the active region sidewalls top thinning or exposed region growing that is corroded is made to go out new thermal oxidation silicon, so that it is rotten to compensate wet method
The damage of step partial sidewall silica is lost, top side wall and bottom oxide silicon thickness has been finally reached close to consistent
Effect, such that it is able to avoid the change of the device electric property produced because top side wall silica is damaged, improves the insulation of STI
Performance, prevents and treats element leakage.
It is pointed out that any change that one skilled in the art is done to specific embodiment of the invention
All without departing from the scope of claims of the present invention.Correspondingly, the scope of claim of the invention is also not merely limited to
In previous embodiment.
Claims (9)
1. a kind of forming method of fleet plough groove isolation structure, it is characterised in that it includes：
Substrate is provided, cushion oxide layer and silicon nitride layer, the cushion oxide layer and silicon nitride are sequentially formed with the substrate
The opening for exposing substrate is formed in layer；
Shallow trench is formed over the substrate along opening；
Form the protection oxide layer on the surface of the covering shallow trench；
Form the covering protection oxide layer and fill the first oxide layer of the shallow trench；
It is etched back to first oxide layer；
Form the supplement oxide layer of protection oxide layer described in covering part；
Form the second oxide layer of the covering protection oxide layer and supplement oxide layer；
The first oxide layer, the second oxide layer and protection oxide layer are planarized until exposing the silicon nitride layer；
Remove the silicon nitride layer.
2. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that the protection oxide layer
Formation process is thermal oxidation technology.
3. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that the protection oxide layer
Thickness is 300 angstroms.
4. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that first oxide layer
Formation process is high density plasma CVD technique.
5. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that the method that is etched back to is
Wet etching.
6. the forming method of fleet plough groove isolation structure according to claim 5, it is characterised in that the wet etching is to adopt
With the method for hydrofluoric acid dips.
7. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that the supplement oxide layer
Formation process is thermal oxidation technology.
8. the forming method of the fleet plough groove isolation structure according to claim 2 or 7, it is characterised in that the thermal oxide work
Skill uses the thermally grown mode of boiler tube.
9. the forming method of fleet plough groove isolation structure according to claim 1, it is characterised in that second oxide layer
Formation process is high density plasma CVD technique.
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| CN201310456823.0A CN104517886B (en) | 2013-09-29 | 2013-09-29 | A kind of forming method of fleet plough groove isolation structure |
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| CN109216257B (en) | 2017-07-03 | 2020-12-15 | 无锡华润上华科技有限公司 | Manufacturing method of LDMOS isolation structure |
| CN109755172B (en) * | 2017-11-07 | 2021-01-01 | 中芯国际集成电路制造(上海)有限公司 | Shallow trench isolation structure, semiconductor device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051479A (en) * | 1998-06-02 | 2000-04-18 | United Semiconductor Corp. | Method of fabricating shallow trench isolation |
| US6913978B1 (en) * | 2004-02-25 | 2005-07-05 | United Microelectronics Corp. | Method for forming shallow trench isolation structure |
| CN101635271A (en) * | 2009-06-09 | 2010-01-27 | 上海宏力半导体制造有限公司 | Fabricating method of shallow trench isolation structure |
| CN102543822A (en) * | 2010-12-23 | 2012-07-04 | 无锡华润上华半导体有限公司 | Method for manufacturing shallow trench isolation structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100421046B1 (en) * | 2001-07-13 | 2004-03-04 | 삼성전자주식회사 | Semiconductor device and method for manufacturing the same |
| US7494894B2 (en) * | 2002-08-29 | 2009-02-24 | Micron Technology, Inc. | Protection in integrated circuits |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6051479A (en) * | 1998-06-02 | 2000-04-18 | United Semiconductor Corp. | Method of fabricating shallow trench isolation |
| US6913978B1 (en) * | 2004-02-25 | 2005-07-05 | United Microelectronics Corp. | Method for forming shallow trench isolation structure |
| CN101635271A (en) * | 2009-06-09 | 2010-01-27 | 上海宏力半导体制造有限公司 | Fabricating method of shallow trench isolation structure |
| CN102543822A (en) * | 2010-12-23 | 2012-07-04 | 无锡华润上华半导体有限公司 | Method for manufacturing shallow trench isolation structure |
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