CN104505353A - Device and method for monitoring dislocation of loaded wafer of flat plate type epitaxial furnace - Google Patents
Device and method for monitoring dislocation of loaded wafer of flat plate type epitaxial furnace Download PDFInfo
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- CN104505353A CN104505353A CN201410805114.3A CN201410805114A CN104505353A CN 104505353 A CN104505353 A CN 104505353A CN 201410805114 A CN201410805114 A CN 201410805114A CN 104505353 A CN104505353 A CN 104505353A
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The invention provides a device and a method for monitoring the dislocation of a loaded wafer of a flat plate type epitaxial furnace. The device comprises a loaded wafer, a base of the epitaxial furnace, a loaded wafer groove, a mechanical hand, a laser transmitter, a laser receiver, a laser detection and control substrate and the like, wherein the laser detection and control substrate is mutually connected with a mechanical hand detection and control substrate of the epitaxial furnace and a machine table main control system. After the loading of the loaded wafer is completed, laser light is emitted to a center position of the loaded wafer of the epitaxial furnace substrate through the laser transmitter, and the laser light is reflected through the loaded wafer; the laser receiver is used for receiving the reflected laser light, and the monitoring of dislocation of the loaded wafer is carried out by judging whether the laser light is received by the laser receiver or not. According to the device and the method for monitoring the dislocation of the loaded wafer of the flat plate type epitaxial furnace, provided by the invention, the situation that a loaded wafer is subjected to dislocation can be accurately and effectively detected at the first time after the loading of the loaded wafer is completed, and the loss of an epitaxial wafer and follow-up device manufacturer can be avoided.
Description
Technical field
The present invention relates to the manufacturing installation of epitaxial wafer, particularly relate to the slide glass supervising device in a kind of flat epitaxial wafer manufacturing installation and method for supervising.
Background technology
In semiconductor chip fabrication, as a kind of main material making semi-conductor discrete device, silicon epitaxial wafer has extremely important status, this is because silicon epitaxial wafer can ensure the high-breakdown-voltage of PN junction, can reduce again the forward voltage drop of device; Silicon epitaxial wafer can also solve the isolating problem of IC simultaneously, and therefore it is also the main raw material(s) of IC device.In the industrial production of reality, chemical vapor deposition (chemical vapor deposition, CVD) technology is widely used in the manufacture of silicon epitaxial wafer.Flat epitaxial furnace in CVD epitaxial furnace is the main force's equipment during current silicon epitaxial wafer manufactures, and flat epitaxial furnace such as LPE3061, ASM and Centura etc. as LPE SPA is the growing epitaxial silicon equipment that industry generally uses.
Flat epitaxial furnace adopts manipulator automatic loading silicon chip, at present in the process using flat epitaxial furnace growing epitaxial sheet, often there will be the situation of silicon slice loading dislocation (out of pocket), normal silicon slice loading position is that the slide glass groove level of silicon chip and pedestal is adjacent to, as as shown in accompanying drawing 1a and 1b, guarantee to form good heat transfer between silicon chip and pedestal in the growing epitaxial silicon process of high temperature on the one hand, ensure the uniformity of silicon temperature in epitaxial process; Meanwhile, in epitaxial growth process, as shown in Figure 2, the loading that silicon chip is good can ensure the uniformity of its airflow on surface to the airflow direction of flat epitaxial furnace source of the gas.And once there is the situation of out of pocket, silicon chip is overlapped on slide glass groove edge as shown in accompanying drawing 1c and 1d, and the air temperature and current on silicon chip all changes.As everyone knows, for semiconductor device, epitaxial loayer is needed to have perfect crystal structure and uniform electrical parameter as epitaxial thickness and resistivity, and in epitaxial process, the parameter resistivity that silicon epitaxial wafer is main and thickness change with the change of the factor such as temperature, air-flow, out of pockek occurs making the change of the air temperature and current in epitaxial process on silicon chip directly cause epitaxial wafer thickness, resistivity evenness to be deteriorated, and even produces lattice defect.
Flat epitaxial device popular at present cannot detect silicon slice loading dislocation (out of pocket), after manipulator completes silicon slice loading in addition, and also cannot this exception of manual identified.Out of pocket is once occur, and epitaxial wafer parameter is by out of control.And in the actual production of epitaxial wafer, because method of testing such as the resistivity measurement of major parameter is destructive testing, so what adopt in continuous flow procedure is the sample testing of production 25 ~ 100 built-in testing a slice, so often the test of epitaxial wafer parameter can not the electrical parameter problem that causes of Timeliness coverage out of pocket, thus cannot the equipment that detect further in time that out of pocket occur is abnormal; In actual production process, normally after device is made by Hou Dao producer, find that electrical parameter is abnormal in the electrical detection of device, counter pushing back finds that to be that out of pocket in epitaxial wafer manufacture process is abnormal cause; And from epitaxial wafer shipment to the device production test of rear road, such as the manufacture of Schottky diode chip of simple device also at least will experience more than 25 days cycle time produced, a flat epitaxial furnace is as 6 of LPE3061 " epitaxial wafer production capacity is 5000 slices/month, the loss of its epitaxial wafer caused and Hou Dao device producer is well imagined.And in the epitaxial growth process of reality, a flat epitaxial furnace occurs that the probability of out of pocket is not low, within usual 1 ~ 2 month, occur once.A large amount of actual production data and experience illustrate that the timely monitoring of silicon slice loading dislocation (out ofpocket) is produced flat epitaxial furnace and have great importance.
Summary of the invention
In order to solve current flat epitaxial furnace because silicon slice loading dislocation (out of pocket) causes epitaxial wafer abnormal parameters, epitaxial wafer and Hou Dao device producer is caused to lose serious problem therefrom, the invention provides a kind of device that can monitor out of pocket in time after silicon slice loading and corresponding monitoring method, can avoid causing the problems such as epitaxial wafer abnormal parameters because silicon slice loading dislocation (out of pocket).
The invention provides a kind of slide glass dislocation monitoring device of flat epitaxial furnace, described flat epitaxial furnace comprises and is loaded sheet, pedestal, slide glass groove, quartz cover, for loading the manipulator being loaded sheet, mechanical arm detects & and controls substrate, board master control system and warning device; It is characterized in that: described slide glass dislocation monitoring device comprises generating laser, laser pickoff, laser detection & control substrate, generating laser and laser pickoff control substrate with laser detection & respectively and are connected, described laser detection & controls substrate and launches as the signal between generating laser and laser pickoff, board master control system, receive and processing center, and controls unlatching and the closedown of generating laser and laser pickoff; Described mechanical arm detects & control substrate and laser detection & control substrate is connected with board master control system respectively, board master control system also connects warning device, the installation site of described generating laser is for making its Laser emission in slide glass groove, and the installation site of described laser pickoff is defined as: the laser of laser transmitter projects is by the receiving position being loaded the reflected ray of sheet reflection of complete horizontal load.
Further, described generating laser is arranged on the side of quartz cover outside, and the opposite side of quartz cover outside installed by described laser pickoff.
Further, the installation site of described generating laser is restricted to: make the laser of generating laser just in time be irradiated to the center of slide glass groove, and being loaded under sheet is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is any one angle between 0 ° of < θ≤60 °; The installation site of laser pickoff relative laser transmitter outside quartz cover is: the angle of incident ray when connecting laser pickoff slide glass groove vertical with normal with the line of slide glass groove center is 2 θ +/-0.2 °.
Preferably, generating laser and laser pickoff become one, be arranged on quartz cover outside, integrated generating laser and the installation site of laser pickoff are restricted to and make laser just in time be irradiated in slide glass groove, and be loaded under sheet is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is 0 °, namely impinges perpendicularly in slide glass groove.
Further, mechanical arm detection & control substrate and laser detection & control substrate are integrated on one piece of circuit substrate.
Present invention also offers a kind of slide glass dislocation monitoring method of flat epitaxial furnace, it is characterized in that: be loaded after sheet completes loading, by laser transmitter projects laser to the slide glass groove center position of epitaxial furnace pedestal, laser is through being loaded the reflection of sheet; And establish laser pickoff to carry out the reception of reflects laser, slide glass dislocation monitoring is carried out in the judgement whether being received laser by laser pickoff.
Further, use the slide glass dislocation monitoring device of flat epitaxial furnace of the present invention, monitoring step comprises:
1) the manipulator load of epitaxial furnace, is loaded sheet and is loaded onto in the slide glass groove of pedestal, and manipulator resets;
2) induced signal that mechanical arm resets sends mechanical arm to and detects & control substrate, this substrate sends the induced signal that the mechanical arm after process resets to board master control system, enabling signal is transferred to laser detection & and controls on substrate by board master control system, laser detection & controls substrate by after the enabling signal process that receives, send action command signal, start generating laser and laser pickoff;
3) laser is radiated at and is loaded on sheet, and is loaded sheet reflection;
4) if laser pickoff receives by the laser reflected, laser detection & controls processing substrate signal and is transferred to the board master control system of epitaxial furnace, and epitaxial furnace carries out next step normal production work;
5) step 4) if middle laser pickoff does not receive by the laser reflected, laser detection & controls the board master control system that the processing signals not receiving laser is transferred to epitaxial furnace by substrate, board master control system stops the further work of epitaxial furnace, and show out of pocket abnormal prompt, start the warning device of epitaxial furnace simultaneously.
Monitoring device provided by the present invention and monitoring method can detect the generation of slide glass dislocation (out of pocket) very first time after slide glass completes accurately and effectively, and give the alarm, equipment can be overhauled in time, avoid the further continuity of abnormal conditions, and because the abnormal abnormal parameters occurring epitaxial wafer and rear road device continuously caused of out of pocket, and avoid and cause epitaxial wafer and Hou Dao device producer to lose serious problem therefrom.The monitoring of out of pocket and silicon slice loading process are almost carried out simultaneously in addition, do not affect the normal production efficiency of equipment.
Accompanying drawing explanation
Fig. 1 a is the schematic top plan view of silicon chip normal load in the slide glass groove of pedestal.
Fig. 1 b is the schematic side view of silicon chip normal load in the slide glass groove of pedestal.
Fig. 1 c is the schematic top plan view of silicon slice loading when there is out of pocket in the slide glass groove of pedestal.
Fig. 1 d is the schematic side view of silicon slice loading when there is out of pocket in the slide glass groove of pedestal.
Fig. 2 is the air-flow schematic diagram of extension production process source of the gas in flat epitaxial furnace, and in figure, arrow represents the direction of air-flow in epitaxial growth process.
The slide glass dislocation monitoring device application schematic diagram that Fig. 3 a is the incidence angle θ of laser in embodiment 1 when being 0 ° of < θ≤60 °.
The slide glass dislocation monitoring device application schematic diagram that Fig. 3 b is the incidence angle θ of laser in embodiment 1 when being 0 °.
Laser emission and reception schematic diagram when Fig. 4 a is normal load silicon chip.
Fig. 4 b is Laser emission during loading silicon chip generation out of pocket and reception schematic diagram.
Fig. 5 is embodiment 2 middle plateform formula epitaxial furnace pedestal and slide glass groove schematic diagram, and in figure, arrow represents pedestal direction of rotation.
Wherein in each accompanying drawing: 1 for being loaded sheet; 2 is pedestal; 3 is slide glass groove; 4 is quartz cover, and 5 is generating laser; 6 is laser pickoff; 7 is laser detection & control substrate; 8 is manipulator; 9 control substrate for mechanical arm detects &; 10 is board master control system; 11 is warning device.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment 1
Slide glass of the present invention dislocation (out of pocket) monitoring device is applied in the ASM monolithic epitaxial furnace that the present embodiment generally uses in current industry, a reaction chamber of ASM monolithic epitaxial furnace only has a slide glass groove, and the sheet that is loaded of the present embodiment is single-sided polishing silicon chip.As shown in Figure 3 a: a generating laser 5 is equipped with in the side of the outside of quartz cover 4 in epitaxial furnace reaction chamber, at the opposite side of quartz cover outside, one laser pickoff 6 is housed, is used for carrying out transmitting and the reception of laser in out of pocket monitors; Generating laser 5 and laser pickoff 6 control substrate 7 with laser detection & respectively and are connected, and laser detection & controls substrate 7 and launches as the signal between generating laser 5 and laser pickoff 6, receives and the signal transacting center such as process, the unlatching of generating laser and laser pickoff and closedown; Simultaneously epitaxial furnace is used for the manipulator 8 of automatic loading silicon chip and also detects & with mechanical arm and controls substrate 9 and be connected, and mechanical arm detection & control substrate 9 is as the Direction Center of running of commanding manipulator 8; Each substrate is all connected with the board master control system 10 of epitaxial furnace; The board master control system 10 of epitaxial furnace is also connected with the warning device 11 of epitaxial furnace.As shown in fig. 4 a, the installation site of generating laser 5 is restricted to: make the laser of generating laser 5 just in time be irradiated to the center of slide glass groove 3, and being loaded under sheet 1 is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is any one angle between 0 ° of < θ≤60 °; The installation site of laser pickoff 6 relative laser transmitter 5 outside quartz cover 4 is: the angle of incident ray when connecting laser pickoff 6 slide glass groove vertical with normal with the line at slide glass groove 3 center is 2 θ +/-0.2 °.
The installation method of generating laser 5 and laser pickoff 6 in contrast execution mode above, more preferred embodiment for generating laser 5 and laser pickoff 6 are become one, be arranged on the top outside quartz cover 4, as Fig. 3 b, integrated generating laser and the installation site of laser pickoff are restricted to and make laser just in time be irradiated in slide glass groove 3, and be loaded under sheet 1 is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is 0 °, namely impinges perpendicularly in slide glass groove 3 and is loaded on sheet.The mode of this kind of vertical incidence, integrated generating laser and the installation site of laser pickoff more flexible, as long as guarantee that laser vertical incides in slide glass groove 3, be not limited in slide glass groove center; And both is integrated, avoid in angled situation, the no matter slight variations of Laser emission and any one position of laser pickoff, plant maintenance personnel need to spend the long period to go to regulate the relative optimum position of Laser emission and receiver, thus this kind of vertical incidence mode is effectively monitored simultaneously in guarantee, also reduces maintenance difficulties.
Wherein, mechanical arm detects & and controls laser detection & control substrate 7 accessible site of substrate 9 and generating laser and laser pickoff on one piece of circuit board, with conserve space.
In epitaxial wafer production process, this slide glass dislocation (out of pocket) monitoring device specific works step is as follows:
1) epitaxial furnace manipulator carries out auto loading, and silicon chip is loaded onto in the slide glass groove of pedestal, and manipulator resets;
2) induced signal (namely mechanical arm controls sensor signal) that mechanical arm resets sends mechanical arm to and detects & control substrate, and substrate sends the induced signal that the mechanical arm after process resets to board master control system.Board master control system controls on substrate by detecting the laser detection & that enabling signal can be transferred to generating laser and laser pickoff after & controls the slide glass settling signal process that sends of substrate from mechanical arm, laser detection & controls substrate by after the enabling signal process that receives, send action command signal, start laser generator and laser pickoff;
3) laser is radiated on silicon chip, is reflected by silicon chip;
4) if laser pickoff receives by the laser reflected, as shown in fig. 4 a, the Signal transmissions receiving laser is controlled substrate to laser detection & by laser pickoff, processing substrate signal is also transferred to the board master control system of epitaxial furnace, and board master control system commander epitaxial furnace carries out next step normal production work;
5) step 4) if middle laser pickoff does not receive by the laser reflected, as shown in Figure 4 b, the Signal transmissions not receiving laser is controlled substrate to laser detection & by laser pickoff, processing substrate signal is also transferred to the board master control system of epitaxial furnace, board master control system stops the further work of epitaxial furnace, and show out of pocket abnormal prompt, start the warning device of epitaxial furnace simultaneously; Staff's prosthetic appliance.
Embodiment 2
The present embodiment (out of pocket) monitoring device that misplaced by slide glass of the present invention is applied in current flat epitaxial furnace and uses widely on LPE3061 epitaxial furnace, LPE3061 is because of the high flexibility of its equipment and being suitable for of kinds of processes, as discrete device technology of new generation, IGBT, PowerMos and thin layer, buried layer, and use the heating of low frequency power generator because of it, electric power can be saved, epitaxial wafer quality is close to monolithic stove product, cost is close to high production capacity epitaxial furnace, and be that industry uniquely can reach the epitaxial furnace of more than 200 microns by deposit epitaxial film thickness, therefore be current silicon epitaxial wafer manufacturer common equipment.The pedestal of LPE3061 has multiple slide glass groove 3, can the epitaxial wafer of production multi-disc simultaneously, during slide glass, manipulator 8 is automatically loaded in the slide glass groove 3 of slide glass position corresponding to manipulator as shown in Figure 5 by being loaded sheet, then rotated by pedestal 2 and successively the slide glass groove 3 of non-slide glass is delivered to slide glass position corresponding to manipulator, carry out slide glass.The present embodiment is production 6 " application slide glass dislocation (out of pocket) monitoring device on the LPE3061 of epitaxial wafer, treat that the sheet that is loaded of epitaxial growth is single-sided polishing silicon chip.In the same manner as in Example 1, in epitaxial furnace reaction chamber, a generating laser 5 is equipped with in the side of the outside of quartz cover 4, at the opposite side of quartz cover 4 outside, one laser pickoff 6 is housed, and is used for carrying out transmitting and the reception of laser in out ofpocket monitors; Generating laser 5 and laser pickoff 6 control substrate 7 with laser detection & respectively and are connected, and laser detection & controls substrate 7 and launches as the signal between generating laser 5 and laser pickoff 6, receives and the signal transacting center such as process, the unlatching of generating laser 5 and laser pickoff 6 and closedown; Simultaneously epitaxial furnace is used for the manipulator 8 of automatic loading silicon chip and also detects & with mechanical arm and controls substrate 9 and be connected, and mechanical arm detection & control substrate 9 is as the Direction Center of running of commanding manipulator 8; Each substrate is all connected with the board master control system 10 of epitaxial furnace; The board master control system 10 of epitaxial furnace is also connected with the warning device 11 of epitaxial furnace.The installation site of generating laser 5 is restricted to: make the laser of generating laser 5 just in time be irradiated to the center of slide glass groove 3, and being loaded under sheet 1 is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is any one angle between 0 ° of < θ≤60 °; The installation site of laser pickoff 6 relative laser transmitter 5 outside quartz cover 4 is: the angle of incident ray when connecting laser pickoff 6 slide glass groove vertical with normal with the line at slide glass groove 3 center is 2 θ +/-0.2 °.
Equally, the installation method of generating laser and laser pickoff in contrast execution mode above, more preferred embodiment for generating laser 5 and laser pickoff 6 are become one, be arranged on quartz cover 4 outside, integrated generating laser and the installation site of laser pickoff are restricted to and make laser just in time be irradiated in the slide glass groove 3 of slide glass position as corresponding in epitaxial furnace manipulator 8 in Fig. 5, and be loaded under sheet 1 is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is 0 °, namely impinge perpendicularly in slide glass groove 3 corresponding to manipulator and be loaded on sheet.
Wherein, mechanical arm detects & and controls substrate 9 and generating laser and laser pickoff detection & control substrate 7 accessible site on one piece of circuit board, with conserve space.
In epitaxial wafer production process, this slide glass dislocation (out of pocket) monitoring device specific works step is as follows:
1) epitaxial furnace manipulator starts to carry out auto loading, and first silicon chip is loaded onto in the slide glass groove of slide glass position as corresponding in Fig. 5 manipulator, and manipulator resets;
2) induced signal (namely mechanical arm controls sensor signal) that mechanical arm resets sends mechanical arm to and detects & control substrate, and substrate sends the induced signal that the mechanical arm after process resets to board master control system.Board master control system controls on substrate by detecting the laser detection & that enabling signal can be transferred to generating laser and laser pickoff after & controls the slide glass settling signal process that sends of substrate from mechanical arm, laser detection & controls substrate by after the enabling signal process that receives, send action command signal, start laser generator and laser pickoff;
3) laser is radiated on silicon chip, is reflected by silicon chip;
4) if laser pickoff receives by the laser reflected, as shown in fig. 4 a, the Signal transmissions that laser pickoff will receive laser controls substrate to laser detection &, and processing substrate signal is also transferred to the board master control system of epitaxial furnace; It is complete that board master control system judges whether silicon chip loads, if need the slide glass groove of slide glass, pedestal rotates, and the next one is treated, and the slide glass groove of slide glass moves to slide glass position corresponding to manipulator as shown in Figure 5;
5) step 1 is repeated) ~ 4), until all slide glass groove silicon slice loading completes, board master control system commander epitaxial furnace carries out next step normal production work;
6) step 4) if middle laser pickoff does not receive by the laser reflected, as shown in Figure 4 b, the Signal transmissions not receiving laser is controlled substrate to laser detection & by laser pickoff, processing substrate signal is also transferred to the board master control system of epitaxial furnace, board master control system stops the further work of epitaxial furnace, and show out of pocket abnormal prompt, start the warning device of epitaxial furnace simultaneously; Staff's prosthetic appliance.
Claims (7)
1. the slide glass dislocation monitoring device of a flat epitaxial furnace, described flat epitaxial furnace comprises and is loaded sheet (1), pedestal (2), slide glass groove (3), quartz cover (4), for loading the manipulator (8) being loaded sheet, mechanical arm detects & and controls substrate (9), board master control system (10) and warning device (11), it is characterized in that: described slide glass dislocation monitoring device comprises generating laser (5), laser pickoff (6), laser detection & controls substrate (7), generating laser (5) and laser pickoff (6) control substrate (7) respectively and are connected with laser detection &, described laser detection & controls substrate (7) as generating laser (5) and laser pickoff (6), signal between board master control system (10) is launched, receive and processing center, and control unlatching and the closedown of generating laser (5) and laser pickoff (6), described mechanical arm detects & control substrate (9) and laser detection & control substrate (7) and is connected with board master control system (10) respectively, and board master control system (10) also connects warning device (11), the installation site of described generating laser (5) is for making its Laser emission in slide glass groove (3), and the installation site of described laser pickoff (6) is defined as: the laser that generating laser (5) is launched is by the receiving position being loaded the reflected ray that sheet (1) reflects of complete horizontal load.
2. the slide glass dislocation monitoring device of a kind of flat epitaxial furnace according to claim 1, it is characterized in that: described generating laser (5) is arranged on the outside side of quartz cover (4), described laser pickoff (6) is arranged on the outside opposite side of quartz cover (4).
3. the slide glass dislocation monitoring device of a kind of flat epitaxial furnace according to claim 2, it is characterized in that: the installation site of described generating laser (5) is restricted to: make the laser of generating laser (5) just in time be irradiated to the center of slide glass groove (3), and being loaded under sheet (1) is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is any one angle between 0 ° of < θ≤60 °; Laser pickoff (6) in the installation site of quartz cover (4) outside relative laser transmitter (5) is: the angle of incident ray when connecting laser pickoff (6) slide glass groove vertical with normal with the line at slide glass groove (3) center is 2 θ +/-0.2 °.
4. the slide glass dislocation monitoring device of a kind of flat epitaxial furnace according to claim 1, it is characterized in that: generating laser (5) and laser pickoff (6) become one, be arranged on quartz cover outside, integrated generating laser and the installation site of laser pickoff are restricted to and make laser just in time be irradiated in slide glass groove, and be loaded under sheet (1) is placed horizontally at slide glass groove situation completely, the incidence angle θ of laser is 0 °, namely impinges perpendicularly in slide glass groove.
5. the slide glass dislocation monitoring device of a kind of flat epitaxial furnace according to Claims 1-4 any one, is characterized in that: mechanical arm detects & control substrate (9) and laser detection & control substrate (7) and is integrated on one piece of circuit substrate.
6. the slide glass dislocation monitoring method of a flat epitaxial furnace, it is characterized in that: be loaded after sheet (1) completes loading, by generating laser (5) Emission Lasers to slide glass groove (3) center of epitaxial furnace pedestal (2), laser is through being loaded the reflection of sheet (1); And establish laser pickoff (6) to carry out the reception of reflects laser, slide glass dislocation monitoring is carried out in the judgement whether being received laser by laser pickoff (6).
7. the slide glass dislocation monitoring method of a kind of flat epitaxial furnace according to claim 6, it is characterized in that: the slide glass dislocation monitoring device using a kind of flat epitaxial furnace described in claim 1 ~ 5 any one, carry out the slide glass dislocation monitoring of flat epitaxial furnace, step comprises:
1) manipulator (8) load of epitaxial furnace, is loaded sheet (1) and is loaded onto in the slide glass groove (3) of pedestal (2), and manipulator (8) resets;
2) induced signal that mechanical arm resets sends mechanical arm to and detects & control substrate (9), this substrate sends the induced signal that the mechanical arm after process resets to board master control system (10), enabling signal is transferred to laser detection & and controls on substrate (7) by board master control system (10), laser detection & controls substrate (7) by after the enabling signal process that receives, send action command signal, start generating laser (5) and laser pickoff (6);
3) laser is radiated at and is loaded on sheet (1), and is loaded sheet (1) reflection;
4) laser pickoff (6) is if receive by the laser reflected, laser detection & controls substrate (7) processing signals and is transferred to the board master control system (10) of epitaxial furnace, and epitaxial furnace carries out next step normal production work;
5) step 4) in laser pickoff (6) if do not receive by the laser reflected, laser detection & controls the board master control system (10) that the processing signals not receiving laser is transferred to epitaxial furnace by substrate (7), board master control system (10) stops the further work of epitaxial furnace, and show out of pocket abnormal prompt, start the warning device (11) of epitaxial furnace simultaneously.
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