CN113252208A - RT detector suitable for epitaxial material and application thereof - Google Patents
RT detector suitable for epitaxial material and application thereof Download PDFInfo
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Abstract
The invention discloses an RT detector suitable for epitaxial materials and application thereof, wherein the RT detector comprises a light source and a receiver; the light sources correspond to the receivers one to one; the light source is used for emitting incident light, and the incident light is transmitted to the surface of the peripheral epitaxial wafer to form an optical signal; the light sources correspond to the peripheral epitaxial wafers one to one; the wavelength of the incident light is continuously adjustable; the shape of the light source is designed to be an eyeball shape; the light source is connected with the power device through a transmission shaft; the sub-receiver is used for receiving optical signals formed by the corresponding epitaxial wafer and performing photoelectric conversion on the received optical signals to obtain electric signals; the detector can realize temperature monitoring of a slightly warped surface and accurate monitoring of the growth temperature in the preparation process of the epitaxial wafer with matched crystal lattices.
Description
Technical Field
The invention relates to the field of growth and preparation of semiconductor materials, in particular to an RT detector suitable for epitaxial materials and application thereof.
Background
The MOCVD is used for epitaxial material growth preparation, and the growth temperature needs to be accurately monitored. There are two commonly used monitoring means, Respectively (RT) and (TC). Wherein RT is the temperature of the wafer surface and is realized by monitoring a reflectivity curve, and TC is the temperature of the graphite disc and is detected by a thermocouple.
Lattice-matched growth is a two-dimensional system generated by utilizing a heterostructure, and mainly a semiconductor junction close to perfect lattice matching can be generated according to the similarity of the atomic sizes of two different semiconductor materials, and originally mutually unequal Fermi energy levels are mutually aligned when the junctions are balanced and cause discontinuity of an energy band, so that a triangular potential energy is generated at the junction; in the growth process, the thermal expansion coefficients of the epitaxial layer material and the substrate are different under the high-temperature condition, the epitaxial wafer is warped under the action of stress, the reflected signal exceeds the receiving range of the detector, the RT curve is reduced to zero, and the temperature is out of control. The cross-sectional view of the position change of the reflected light on different surfaces of the epitaxial wafer is shown in fig. 1, as shown in fig. 1, the reflected light beam can be well received by a detector on a flat surface ((a) or (D)), but the reflected signal exceeds the receiving range on a negative inclined surface (B) and a positive inclined surface (C), so that the monitoring is failed, and as shown in fig. 2, the position of the reflected light beam of the epitaxial wafer is shown in a schematic view (in a top view) in the production process, when the surface of the epitaxial wafer is warped, part of the light beam deviates from the set position, so that the accuracy is affected.
Therefore, there is a need for an RT probe for epitaxial materials that enables temperature monitoring of slightly warped surfaces and accurate monitoring of growth temperature during the preparation of lattice matched epitaxial wafers.
Disclosure of Invention
The first technical problem to be solved by the invention is as follows: an RT detector suitable for epitaxial materials can realize temperature monitoring of a slightly warped surface and accurate monitoring of growth temperature in a process of preparing a lattice matched epitaxial wafer.
The second technical problem to be solved by the invention is as follows: the use method of the RT detector.
In order to solve the first technical problem, the technical scheme provided by the invention is as follows: an RT detector suitable for epitaxial materials comprises a light source and a receiver; the light sources correspond to the receivers one to one;
the light source is used for emitting incident light, and the incident light is transmitted to the surface of the peripheral epitaxial wafer to form an optical signal;
the light sources correspond to the peripheral epitaxial wafers one to one;
the wavelength of the incident light is continuously adjustable;
the shape of the light source is designed to be an eyeball shape;
the light source is connected with the power device through a transmission shaft;
the sub-receivers are used for receiving optical signals formed by the corresponding epitaxial wafers and performing photoelectric conversion on the received optical signals to obtain electric signals.
According to some embodiments of the invention, the power means comprises a stepper motor.
According to some embodiments of the invention, the range covered by the receiver in the detector corresponds to the position reached by the reflected light at maximum warpage in front of the flyer.
The critical flyer is the flyer with the largest warpage, and the coverage range of the sub-detector is determined by the position offset by the reflected light of the critical flyer.
According to some embodiments of the invention, the receiver is further connected to a controller.
According to some embodiments of the invention, the controller is configured to calculate the temperature of each epitaxial wafer separately from the electrical signal.
According to some embodiments of the invention, the controller determines the final temperature of the epitaxial wafer by comparing the electrical signals obtained by the receivers.
According to some embodiments of the invention, the RT detector is located above the epitaxial wafer.
The RT detector according to the embodiment of the invention has at least the following beneficial effects: the detector realizes the temperature monitoring of the slightly warped surface and the accurate monitoring of the growth temperature in the preparation process of the epitaxial wafer with the matched crystal lattices.
To solve the second technical problem, the present invention provides the following technical solutions: the RT detector is applied to observing the growth process of an epitaxial wafer.
The application comprises the following steps:
placing an epitaxial wafer in an epitaxial wafer carrier, and controlling the motion states of the epitaxial wafer and the epitaxial wafer carrier to be consistent;
and adjusting the monitoring mode of the RT detector according to the growth state of the epitaxial wafer, so that the RT detector and the epitaxial wafer are in a relatively static state in the vertical direction to observe the growth process of the epitaxial wafer.
According to some embodiments of the invention, the vertical direction is a direction perpendicular to the surface of the epitaxial wafer.
According to some embodiments of the invention, the above application further comprises the steps of: the epitaxial wafer carrier is provided for operation in a chemical vapor deposition chamber.
According to some embodiments of the invention, the monitoring is performed by adjusting the light emitting direction.
According to some embodiments of the invention, the epitaxial wafer carrier comprises a graphite disk or a molybdenum disk.
According to some embodiments of the invention, the method for adjusting the light emitting direction comprises: adjusted by a stepper motor or rotary polar coordinates.
The warpage degree and deformation characteristics of the epitaxial wafer are monitored in real time by comparing the received light angle and intensity of each sub-receiver; the angle and the intensity of a reflected light beam received by the detector are compared and calculated through a difference method, so that the reflected light is monitored in a tracking mode, a reflectivity curve is obtained, and the warping degree and the deformation characteristics of the epitaxial wafer are monitored in real time.
The use method of the RT detector according to the embodiment of the invention at least has the following beneficial effects: the use method of the invention realizes that the direction of the incident light emitted by the light source is adjusted in time along with the deformation of the epitaxial wafer, namely, the direction of the incident light reaching the surface of the epitaxial wafer is adjusted, the reflected light on the surface of the epitaxial wafer is ensured to enter a receiver, the effective monitoring of the RT curve in the whole growth process is realized, and the growth temperature is further accurately controlled; the composition and uniform growth control of the epitaxial layer is realized; and a light source with continuously adjustable wavelength is adopted, so that the condition of out-of-control reflection signals caused by overlapping of the wavelength of a monochromatic reflection light source and a sub-battery reflection light source with a DBR structure is avoided.
Drawings
FIG. 1 is a schematic diagram (cross-section) of the variation of the reflected light positions of different surfaces of an epitaxial wafer during the related art manufacturing process;
FIG. 2 is a schematic diagram (top view) of a reflected beam position of an epitaxial wafer during a related art manufacturing process;
FIG. 3 is a schematic view of an eye-ball light source according to an embodiment of the present invention;
FIG. 4 is a coordinate system and an explanatory diagram for calculating the warpage rate of an epitaxial wafer in the second and third embodiments of the present invention;
FIG. 5 is a schematic view of a portion of a ball on the surface of an epitaxial wafer according to second and third embodiments of the present invention;
fig. 6 is a schematic diagram of optical signal paths before deformation of the epitaxial wafers occurs in the second and third embodiments of the present invention;
fig. 7 is a schematic diagram of optical signal paths after deformation of the epitaxial wafers in the second and third embodiments of the present invention;
fig. 8 is a schematic diagram of an optical signal path after adjusting the monitoring mode in the second and third embodiments of the present invention.
Description of reference numerals:
(A) a flat surface 1; (B) a negative inclined surface; (C) a positively sloped surface; (D) a flat surface 2; A. the center of the graphite plate; B. a beam spot; C. the center of the epitaxial wafer; m, the center of the ball where the surface of the epitaxial wafer is located; n, M projection of point on the surface of the epitaxial wafer; x, a coordinate axis parallel to the long edge of the warpage tester; y, a coordinate axis parallel to the short side of the warpage tester; z is the optical axis of the warpage tester; s, a coordinate axis passing through the center of the light spot and perpendicular to the light spot, r, a radial axis passing through the plane of the light spot and the center of the circle; t, a tangential axis passing through the plane of the light spot and perpendicular to the radial axis; E. a light source 1; e', a light source 2; D. a flat epitaxial wafer; d', warping the epitaxial wafer; F. a receiver; phi, an incident angle of 1; phi' and an incident angle of 2; Φ ", angle of incidence 3.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments. The test methods used in the examples are all conventional methods unless otherwise specified; the materials, reagents and the like used are commercially available reagents and materials unless otherwise specified.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
The first embodiment of the invention is as follows: an RT detector suitable for epitaxial materials comprises an eyeball-shaped light source and a receiver, wherein the eyeball-shaped light source and the receiver are used for observing a corresponding epitaxial wafer; the light source is designed to be an eyeball, the eyeball light source comprises a rotatable carrier and a light outlet as shown in figure 3, and the relative direction of the light outlet and the epitaxial wafer is adjusted through the rotatable carrier, so that the light outlet direction of the light source can be continuously rotated and adjusted at 360 ℃.
The second embodiment of the invention is as follows: a method of using an RT probe adapted for use with epitaxial material, the method comprising the steps of:
placing an epitaxial wafer in an epitaxial wafer carrier, and controlling the motion states of the epitaxial wafer and the carrier to be consistent;
adjusting a monitoring mode in the RT detector according to the growth state of the epitaxial wafer so as to observe the growth process of the epitaxial wafer; the monitoring mode is adjusted by receiving the light angle and intensity through the receiver to calculate the warping degree and deformation characteristics of the epitaxial wafer, and the light emitting direction of the eyeball-shaped light source is adjusted through the stepping motor.
The third embodiment of the invention is as follows: a method of using an RT probe adapted for use with epitaxial material, the method comprising the steps of:
placing an epitaxial wafer in an epitaxial wafer carrier, and controlling the motion states of the epitaxial wafer and the carrier to be consistent;
adjusting a monitoring mode in the RT detector according to the growth state of the epitaxial wafer so as to observe the growth process of the epitaxial wafer; the monitoring mode is adjusted to receive the light angle and intensity through the receiver, the warping degree and the deformation characteristics of the epitaxial wafer are calculated, the light emitting position is changed in a rotating mode, and the light emitting direction is recorded in a polar coordinate mode.
The method for calculating the warping degree of the epitaxial wafer in the second and third embodiments of the present invention is as follows:
the position of the reflected spot detected by the receiver is in the direction X, Y, and the position coordinates x and y of the reflected spot depend on the local tilt of the position of the epitaxial wafer where the incident light is currently located, since the light beam is reflected at the surface of the epitaxial wafer. Tangential component alpha of the angle of inclinationtAnd a radial component arX and y satisfy the following relationships:
αt＝Cangle x (1a)；
αr＝Cangle y (1b)；
wherein, CangleAre calibration parameters. The warpage tester in equations (1a) and 1(b) is identical to that shown in the optical head of fig. 4, with the optical axis z parallel to the axis of rotation of the graphite disk.
When the carrier disk rotates, along the radius RBArc of (a) acquisition angle alphat(f)、αr(f) As a function of the alternative epitaxial wafer center shift angle f.
In good approximation, the epitaxial wafer surface can be considered as a part of a sphere, as shown in fig. 5. The sphere can be used with its radius RBall with ball-shaped sectionAnd the position of point N, i.e. the projection of the sphere centre (point M) onto the plane of the epitaxial wafer (this is the point where the sphere surface is perpendicular to the direction of the axis of rotation). By its radial distance R from the axis of rotationNAnd an angular distance f from the center of the epitaxial waferΝTo define point N.
Tangential component angle alpha of a rotating spherical surfacet(f) And radial component angle alphar(f) Described by the following equation:
αt(f)＝a sin(f-fN) (2a)；
αr(f)＝a cos(f-fN)-b (2b)；
wherein: a ═ RN/RBall with ball-shaped section(3)；
b＝RB/RBall with ball-shaped section(4)；
Parameters a, b, f in the model function (2a, b)NFrom the collected alphat(f) And alphar(f) And obtaining the data by taking the data as the solution of a linear equation system. The a, b and f of each epitaxial wafer can be calculated by softwareNThe value is obtained. The warp radius R of each epitaxial wafer can then be determinedBall with ball-shaped sectionAnd an inclination (α)C,r,αC,t)：
RBall with ball-shaped section＝RB/b (5)；
αC,r＝a cosfN-bRC/RB (6a)；
αC,t＝a sinfN (6b)；
Then, with RBall with ball-shaped sectionRecalculating the curvature of the epitaxial wafer (K1/R)Ball with ball-shaped section)；
K＝1/RBall with ball-shaped section ＝b/ RB (7)；
K >0 represents a concave surface; k <0 represents a convex surface.
The tilt d of the epitaxial wafer can be easily calculated from the curvature:
wherein:
the diameter of the epitaxial wafer.
The warp degree of the epitaxial wafer is calculated by the above calculation method.
And adjusting the monitoring mode of the RT detector according to the growth state of the epitaxial wafer, so that the RT detector and the epitaxial wafer are in a relatively static state to observe the growth process of the epitaxial wafer.
Fig. 6 shows a schematic diagram of an optical signal path before the epitaxial wafer is deformed in the second and third embodiments of the present invention, and it is seen from fig. 6 that the light source E emits incident light, the incident angle 1 is Φ, and the receiver F can normally receive the reflected optical signal.
Fig. 7 shows a schematic diagram of a path of an optical signal after deformation of the epitaxial wafer in the second and third embodiments of the present invention, and it is seen from fig. 7 that the light source E emits incident light with an incident angle 2 of Φ', the reflected light deviates from a range of a threshold of an effective intensity set by the receiver, and the receiver F cannot receive the reflected light signal.
Fig. 8 shows schematically the optical signal path after adjusting the monitoring mode in the second and third embodiments of the present invention, and it can be seen from fig. 8 that the light source E' emits incident light, the incident angle 3 is Φ ", and the receiver F cannot receive the reflected light signal; the receiver receives the reflected light signal again after adjusting the angle of the incident angle 3.
In the adjustment of the incident angle from fig. 7 to fig. 8, the incident light intensity and the angle are calculated by a difference method (comparison method), and the first calculation method is as follows:
1. intensity of reflected light I when entering receiver F1Below a set threshold I0And recording the orientation (R) of the light source0，θ0)；
2. Changing the step pitch of unit length according to a certain direction (clockwise or anticlockwise) by a stepping motor, recording and comparing the reflected light intensity I received by the receiver at the moment2；
3. If I2Is greater than I1If the difference is greater than 0, the step distance of unit length is continuously changed according to the direction, and the reflected light intensity I received by the receiver at the moment is continuously recorded and compared3Until the appearance of In-In-1<0, the incident angle adjustment is completed, and the incident light azimuth (R) at that time is recordedn-1，θn-1) The distance from the light source E to the surface of the D is known, and the deformation direction and degree of the D' can be calculated according to the azimuth difference; the calculation method of the azimuth difference value comprises the following steps:
△R＝Rn-Rn-1；
△θ＝θn-θn-1；
the larger the value of Δ R or Δ θ, the larger the degree of deformation of the material;
4. if I2Is less than I1I.e. the difference is less than 0, the orientation is changed and the intensity of the reflected light received by the receiver is recorded and compared until I is foundn-1After the adjustment of the incident angle is finished, recording the incident light direction at the moment, and further calculating the D' deformation direction and degree;
5. if I2Is equal to I1Adjusting the step pitch to be large until the step 3 or 4 can be repeated;
6. in order to eliminate the influence of the accuracy of the stepping motor on the received light intensity of the receiver, the method is characterized in that (R)n-1，θn-1) Position, continue to change orientation (Δ R, Δ θ), then return to (R)n-1，θn-1) Position, comparing the intensity of light I at the momentn+1And In-1If the values are equal, the precision of the stepping motor meets the requirement; otherwise, the influence of the stepping precision is considered, and the stepping precision is corrected or improved.
In the adjustment of the incident angle from fig. 7 to fig. 8, the incident light intensity and the angle are calculated by a difference method (comparison method), and the second calculation method is as follows:
1. in the state of fig. 7, the light intensity received by the receiver for determining the positive and negative changes (Δ R, Δ θ) of the light source orientation is lower than the set threshold I0；
2. Intensity of reflected light I when entering receiver F1Below a set threshold I0And recording the orientation (R) of the light source0，θ0)；
3. In the state of FIG. 8, the received light intensity I is compared while directly changing in a certain direction (Δ R, Δ θ)2：
If at this time I2Is greater than I1Then decrease the step pitch and repeat the step until In-In-1If the angle is less than 0, the incident angle is adjusted;
if at this time I2Is less than I1Then the return to home position is changed in the opposite direction (Δ)R,. DELTA.theta.), comparison I'2And l'1：
If is still'2Is less than I'1Then, the wafer is returned to the original position, and the direction of rotation on the surface of the epitaxial wafer is changed by a specific angle ([ Delta ] R, [ Delta ] theta), and compared with I'2And I')1Up to I')2Greater than I')1When the position determination is again reduced by step size to In-In-1If the angle is less than 0, the incident angle is adjusted; wherein the specific angle is 90 ° or 45 °.
The difference method (comparison method) is suitable for the condition of small warping degree (Bow) or Warp (Warp) < 40 mu m), and due to the warping introduced by the thermal expansion coefficient of the material in the lattice matching structure, the reflected light intensity of the receiver is rapidly improved, and real and controllable temperature is realized.
In conclusion, the use method of the RT detector provided by the invention realizes that the direction of the incident light emitted by the light source is adjusted in time along with the deformation of the epitaxial wafer, namely, the direction of the incident light reaching the surface of the epitaxial wafer is adjusted, the reflected light on the surface of the epitaxial wafer is ensured to enter a receiver, the effective monitoring of the RT curve in the whole growth process is realized, and the growth temperature is accurately controlled; the composition and uniform growth control of the epitaxial layer is realized; and a light source with continuously adjustable wavelength is adopted, so that the condition of out-of-control reflection signals caused by overlapping of the wavelength of a monochromatic reflection light source and a sub-battery reflection light source with a DBR structure is avoided.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (9)
1. An RT probe suitable for epitaxial materials, comprising: comprises a light source and a receiver; the light sources correspond to the receivers one to one;
the light source is used for emitting incident light, and the incident light is transmitted to the surface of the peripheral epitaxial wafer to form an optical signal;
the light sources correspond to the peripheral epitaxial wafers one to one;
the wavelength of the incident light is continuously adjustable;
the shape of the light source is designed to be an eyeball shape;
the light source is connected with the power device through a transmission shaft;
the sub-receivers are used for receiving optical signals formed by the corresponding epitaxial wafers and performing photoelectric conversion on the received optical signals to obtain electric signals.
2. An RT probe suitable for epitaxial material according to claim 1, wherein: the power device comprises a stepping motor.
3. An RT probe suitable for epitaxial material according to claim 1, wherein: the wavelength range of the incident light is 300 nm-1800 nm.
4. An RT probe suitable for epitaxial material according to claim 1, wherein: the range covered by the receiver in the detector corresponds to the position reached by the reflected light when the flying piece is maximally warped.
5. Use of an RT probe according to any of claims 1 to 4 for observing the growth of epitaxial wafers.
6. Use according to claim 5, characterized in that: the method comprises the following steps:
placing an epitaxial wafer in an epitaxial wafer carrier, and controlling the motion states of the epitaxial wafer and the epitaxial wafer carrier to be consistent;
and adjusting the monitoring mode of the RT detector according to the growth state of the epitaxial wafer, so that the RT detector and the epitaxial wafer are in a relatively static state in the vertical direction to observe the growth process of the epitaxial wafer.
7. Use according to claim 6, characterized in that: the epitaxial wafer carrier comprises a graphite disk or a molybdenum disk.
8. Use according to claim 5, characterized in that: the monitoring mode is to adjust the light emitting direction of the light source.
9. Use according to claim 7, characterized in that: the method for adjusting the light emitting direction of the light source comprises the following steps: adjusted by a stepper motor or rotary polar coordinates.
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| CN104505353A (en) * | 2014-12-22 | 2015-04-08 | 杭州立昂微电子股份有限公司 | Device and method for monitoring dislocation of loaded wafer of flat plate type epitaxial furnace |
| CN205382226U (en) * | 2015-11-19 | 2016-07-13 | 中山德华芯片技术有限公司 | System based on MOCVD control solar cell epitaxial wafer is grown |
| CN111398774A (en) * | 2020-03-18 | 2020-07-10 | 西安奕斯伟硅片技术有限公司 | Method and device for testing minority carrier lifetime of silicon wafer |
| CN111562008A (en) * | 2020-07-20 | 2020-08-21 | 北京金太光芯科技有限公司 | Method and device for measuring PL wavelength of incident angle of variable excitation light source |
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