JP2006189261A - Apparatus for measuring temperature of semiconductor substrate and its utilization - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To implement accurate measurement of substrate temperature and substrate temperature distributions by a temperature measuring apparatus of a simple constitution and provide a semiconductor device of satisfactory quality by using the temperature measuring apparatus. <P>SOLUTION: A light source 21 irradiates a semiconductor substrate 2 with light. A photo-detector 22 detects its scattering light. A spectrum analyzer 24 performs spectral analysis on the detected scattering light. A temperature operation part 25a computes the temperature of the semiconductor substrate 2 on the basis of the size of a band gap of the semiconductor substrate 2 acquired from analyses results. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a temperature measurement device for a semiconductor substrate, and more particularly to a temperature measurement device suitably used for a semiconductor device manufacturing apparatus.

  Currently, an epitaxial growth method (epitaxy) is widely used as a method for forming a semiconductor thin film (thin film) in the production of a compound semiconductor device typified by a semiconductor laser. The epitaxial growth method is a method for growing a thin film by crystallizing a thin film material on a semiconductor substrate. Among them, the molecular beam epitaxy (MBE) method and the metal organic chemical vapor deposition (MOCVD) method can form an extremely thin crystal film and a complex multilayer structure film. Therefore, it is attracting attention as a promising technology in the future.

  In these epitaxial growth methods, the surface temperature of the substrate greatly affects the adsorption and crystallization of thin film material atoms. That is, the substrate temperature is an important condition factor in the epitaxial growth of a thin film. Therefore, measuring and controlling the substrate temperature accurately and with high reproducibility is an indispensable technique for the thin film growth technique.

  Several methods have been proposed so far to accurately measure the temperature of the substrate. As main substrate temperature measuring methods, there are a method using a thermocouple (thermocouple method), a method using infrared rays (infrared method), a method of irradiating a substrate with light, and utilizing the specular reflection light, and the like.

  Hereinafter, these conventional substrate temperature measuring methods will be described.

  First, the thermocouple method and the infrared method will be described with reference to FIG. FIG. 7 is a schematic diagram of a molecular beam epitaxial growth apparatus (MBE apparatus) 100 using a conventional thermocouple method and infrared method.

  As shown in FIG. 7, the MBE apparatus 100 grows a thin film on a substrate (semiconductor substrate) 71 held by a manipulator 72. The manipulator 72 is provided with a heater 73 that adjusts the temperature of the substrate 71. Further, a thermocouple 74 is installed in the space between the heater 73 and the substrate 71. The temperature measured by the thermocouple 74 is transmitted to the temperature controller 75. The temperature controller 75 adjusts the amount of current supplied from the heater power supply 76 to the heater 73 so that the measured temperature becomes a preset temperature. However, since this thermocouple method does not measure the actual temperature of the substrate surface, there is a problem that the error is large.

  Therefore, in order to grasp the actual temperature of the substrate surface, the MBE apparatus 100 needs to confirm using another measuring device. For this purpose, a radiation thermometer 57 is generally used as a temperature measuring device. The MBE apparatus 101 includes a view port 79 at a position (normal direction) immediately below the manipulator 72 in the vacuum chamber 78, and a radiation thermometer 77 outside the view port 79. The radiation thermometer 77 measures the amount of infrared radiation from the substrate 71 via the view port 79 outside the vacuum chamber 78. The temperature of the substrate 71 is measured by converting the amount of infrared radiation thus measured into a temperature.

  On the other hand, as a method of using specular reflection light, Patent Document 1 describes a temperature measurement method based on the temperature dependence of a band gap. That is, the surface of the substrate (semiconductor substrate) is irradiated with white light or modulated light, and the reflected light (specular reflection light) is measured to obtain reflection spectrum data. The reflection spectrum data and the band gap of the substrate material It is described that the temperature of the substrate surface is measured by collating with known data of temperature dependency.

  Further, as another method using specular reflection light, in Patent Document 2, a silicon substrate (semiconductor substrate) is irradiated with parallel polarized light (laser light) and absorbed due to dangling bonds on the surface of the silicon substrate. It describes that the substrate temperature is measured using the wavelength.

  In addition, in the thin film formation, it is important to adjust the temperature distribution as well as the temperature.

  In a semiconductor device manufacturing apparatus for manufacturing a semiconductor device by crystallizing a thin film on a substrate (semiconductor substrate), a large number of elements (devices) are produced by one crystal growth, so that the substrate has a large diameter or many In some cases, a thin film is formed simultaneously on a single substrate.

  In this case, when the temperature difference is large within the substrate and between the substrates, variations in crystal quality occur, and variations in element characteristics may lead to a decrease in yield. Therefore, in order to improve the temperature distribution of the substrate, that is, to reduce the difference in temperature generated within one substrate and between a plurality of substrates, the substrate is rotated by a manipulator or a plurality of heaters are installed. In general, the substrate temperature can be made uniform by individually controlling the heater outputs.

  As described above, in order to adjust the temperature distribution, it is an important technique to accurately measure the temperature distribution of the substrate.

Therefore, in Patent Document 2, laser light from an irradiation unit (light irradiation unit) is irradiated to an arbitrary position of a silicon substrate by a rotating mirror, and reflected light (specular reflection light) is received by a plurality of rotating mirrors to a light receiving unit ( It describes that the temperature distribution on the surface of the substrate is measured by making the light incident on the light detection means.
Japanese Patent No. 2554735 (Registered on August 22, 1996) JP-A-6-283589 (released on October 7, 1994)

  In the above infrared method, the amount (intensity) of infrared rays from the substrate is converted into temperature. As a result, the intensity of the detected infrared light decreases because the observation window of the viewport becomes cloudy during film formation, or deposits or flakes of surplus material in the chamber come in and partially block the field of view. , There was a case of mismeasurement.

  In addition, when this method is applied to the MBE apparatus, since a plurality of molecular beam cells for supplying a thin film material are mounted in the growth chamber, radiation from the molecular beam cell becomes disturbance light, which is reflected by reflection or the like. When the radiation thermometer is reached, it is added to the amount of radiation from the substrate that should be measured, so that there is a problem of erroneous measurement.

  In the case of the method described in Patent Document 2, since specular reflection light is used, in order to accurately measure the temperature, the light receiving unit must be accurately positioned on the optical path of the reflected light. In this case, there is a problem that the positions of the light irradiator, the photodetector, and the rotating mirror must be controlled with high accuracy.

  Furthermore, when measuring the temperature distribution on the substrate surface using specular reflection light, the light irradiation unit and the light detector are tuned in order to control the positional relationship between the light irradiation unit and the light detector as described above. Needed to move. For example, in the method using a mirror as in Patent Document 2, the rotating mirror on the irradiation light side and the rotating mirror on the reflected light side must be simultaneously controlled with high accuracy. Therefore, if the control system becomes very complicated and it becomes impossible to synchronize these rotary mirrors due to some trouble, the temperature distribution measuring mechanism may be disabled.

  Similarly to the infrared method, the reflection detected by the observation port is cloudy during film formation, or deposits or flakes of surplus material in the chamber fly in and partially block the field of view. In some cases, the intensity of light (specular reflection light) is reduced, resulting in erroneous measurement.

  In the case of a method using a band gap, such as the method described in Patent Document 1 described above, since the result of spectral analysis of light, not the amount of light, is converted into temperature, the amount of light due to clouding of the observation window, etc. Unaffected by changes in Further, in this method, since the absorption edge of the wavelength of the substrate material is detected, it is not affected by disturbance light.

  However, since the configuration described in Patent Document 1 is a configuration for measuring one point on a substrate, for example, when a plurality of substrates are mounted on a large-diameter substrate or a substrate holder, the large-diameter substrate There has been a problem that the above temperature distribution or the temperature distribution of each of a plurality of substrates cannot be measured.

  If the temperature distribution of the substrate is to be measured with the crystal growth apparatus described in Patent Document 1, the substrate is moved with respect to the temperature measurement apparatus or the substrate is measured in order to perform measurement at a desired measurement position. It is conceivable to move the temperature measuring device.

  However, in the configuration of the temperature measuring device described in Patent Document 1, since the measurement is performed using reflected light (specular reflected light) including the temperature information of the substrate, the photodetector (light detection means) is reflected light. Must be received accurately. For this reason, optical systems such as a light source (light irradiating means), a photodetector, and a condenser lens must be strictly positioned. Therefore, when the substrate is moved with respect to the temperature measuring device as described above, or when the temperature measuring device is moved with respect to the substrate, it is necessary to move all these members including the light source. As a result, the temperature measuring device crosses the space on the substrate surface used for crystal growth, which makes the device configuration complicated and makes it difficult to measure temperature while performing crystal growth.

  The present invention has been made in view of the above-described conventional problems, and an object of the present invention is to realize accurate measurement of the substrate temperature and the temperature distribution of the substrate with a temperature measuring device having a simpler configuration, and to provide the temperature measuring device. It is to provide a high-quality semiconductor device by using it.

  In order to solve the above problems, a temperature measuring apparatus according to the present invention is a temperature measuring apparatus for measuring the temperature of a semiconductor substrate, wherein the semiconductor substrate is irradiated with light irradiating means, and the semiconductor substrate is irradiated with light. A light detection means for detecting the light after the detection, a spectrum analysis means for analyzing the spectrum of the light detected by the light detection means, an analysis result by the spectrum analysis means, and an absorption caused by a band gap in the semiconductor substrate Temperature calculation means for calculating the temperature of the light irradiation position on the semiconductor substrate based on the temperature characteristics of the wavelength, and light movement for moving the irradiation position by moving the light irradiated to the semiconductor substrate A temperature at the irradiation position by detecting light scattered at the irradiation position by the light detection means. And measuring.

  According to the above configuration, a part of the light (irradiation light) irradiated to the semiconductor substrate by the light irradiation unit is specularly reflected by the surface of the semiconductor substrate, that is, the surface of the semiconductor substrate facing the light irradiation unit side. Thus, the light travels in a direction that is included in a plane including the normal line of the semiconductor substrate at the light irradiation position and the optical path of the irradiation light, and that is in a line-symmetric relationship with the traveling direction of the irradiation light with respect to the normal line.

  Further, another part of the irradiated light travels in the semiconductor substrate, travels in various directions after being scattered inside the semiconductor substrate.

  In the temperature measuring device, the scattered light (scattered light) is detected by the light detecting means, and the spectrum is analyzed by the spectrum analyzing means, thereby obtaining an absorption edge corresponding to the band gap of the semiconductor material of the semiconductor substrate. (Absorption wavelength) can be measured. Since the size of the band gap of the semiconductor material depends on the temperature of the semiconductor material, the absorption wavelength varies depending on the temperature of the semiconductor substrate. Accordingly, by confirming the correlation between the absorption wavelength and the temperature in advance, the temperature of the semiconductor substrate can be calculated from the obtained absorption wavelength value by the calculation means.

  Thus, unlike the conventional temperature measuring apparatus using reflected light, the temperature detecting means according to the present invention needs to set the positional relationship between the light irradiating means and the light detecting means to a specular reflection relationship. Therefore, the degree of freedom of arrangement of the light irradiation means and the light detection means is increased, and highly accurate alignment between the light irradiation means and the light detection means is not required. The “specular relationship” means a positional relationship in which the light detection unit is on the optical path of the specular reflection light of the light irradiated from the light irradiation unit to the semiconductor substrate.

  Furthermore, since the temperature measuring device includes the light moving means, it is possible to measure not only the temperature at one point on the semiconductor substrate but also the temperature at an arbitrary position on the semiconductor substrate.

  Further, since the scattered light is used as described above, even if the light irradiation position on the semiconductor substrate is changed by the light moving means, it is not necessary to move the light detecting means so as to follow the change. Therefore, it is not necessary to provide a member such as a moving means for moving the light detecting means on the light detecting means side, and it is not necessary to synchronize the operations of the moving means and the light moving means with high accuracy.

  As a result, it becomes possible to measure the temperature at an arbitrary position on the semiconductor substrate while simplifying the structure of the temperature measuring device.

  Moreover, it is preferable that the said light moving means moves the said irradiation position by changing the irradiation angle of the light which goes to the said semiconductor substrate.

  According to the said structure, the irradiation position of the said light can be changed, without moving the said light irradiation means from the installed position. Therefore, it is not necessary to provide a space for moving the light irradiation means in the temperature measuring device, and the temperature measuring device can be reduced in size and simplified.

  The positional relationship between the light irradiating means and the light detecting means is preferably set so as to deviate from the specular reflection relationship with respect to the semiconductor substrate.

  According to the said structure, the light irradiated by the said light irradiation means and specularly reflected by the said semiconductor substrate surface becomes difficult to enter into the said light detection means. Since the specular reflection light includes light that does not include the temperature information of the semiconductor substrate, according to the above configuration, the S / N ratio is increased and the temperature measurement accuracy can be improved.

  Moreover, it is preferable that the said temperature measurement apparatus is further provided with the measurement position specific | specification means which specifies the measurement position of the temperature in the said semiconductor substrate based on the said irradiation position.

  According to the above configuration, since the temperature measuring device further includes the measurement position specifying means, the temperature distribution of the semiconductor substrate can be known from the irradiation position and the temperature of the semiconductor substrate.

  Further, the temperature measuring device is based on a substrate moving means for moving the semiconductor substrate with respect to the irradiation position, the irradiation position, and the position of the semiconductor substrate determined by the substrate moving means. It is preferable to include measurement position specifying means for specifying a temperature measurement position on the substrate.

  According to the above configuration, since the change of the irradiation position of the light and the movement of the semiconductor substrate are combined, the temperature of the semiconductor substrate can be adjusted without requiring complicated operations for the light moving means and the substrate moving means. It can be measured over a wide range.

  The semiconductor device manufacturing apparatus according to the present invention is a semiconductor device manufacturing apparatus for manufacturing a semiconductor device by forming a thin film on the surface of a semiconductor substrate, and the temperature of the substrate is measured by the temperature measuring apparatus. It is characterized by.

  According to the above configuration, in the semiconductor device manufacturing apparatus, the temperature distribution of the semiconductor substrate can be accurately measured by the temperature measuring apparatus.

  According to another aspect of the present invention, there is provided a semiconductor device manufacturing apparatus including the temperature measuring device and temperature adjusting means for adjusting the temperature of the semiconductor substrate, and manufacturing a semiconductor device by forming a thin film on the surface of the semiconductor substrate. A semiconductor device manufacturing apparatus, comprising: control means for controlling the temperature adjusting means based on the temperature information of the semiconductor substrate obtained by the temperature measuring apparatus.

  According to the said structure, the said semiconductor device manufacturing apparatus can adjust the temperature of the said semiconductor substrate based on the information of the temperature obtained by the said temperature measurement apparatus. Therefore, the semiconductor substrate can be adjusted to a temperature suitable for thin film formation and a uniform temperature distribution. As a result, it is possible to improve the yield in manufacturing semiconductor devices and to manufacture high-quality devices. For example, when the semiconductor device is an optical element such as a semiconductor laser, there is an effect that variation in emission wavelength of each element is reduced.

  Moreover, the arrangement of the light irradiation means and the light detection means of the temperature measuring device can be set more freely than before, as described above. Therefore, these arrangements can be set so as not to obstruct thin film formation. For example, when the semiconductor device manufacturing apparatus is an MBE apparatus, these positions can be set at positions that do not interfere with molecular beams generated during thin film formation. This makes it possible to measure the temperature of the semiconductor substrate while forming a thin film on the semiconductor substrate.

  The temperature measurement method according to the present invention is a temperature measurement method for measuring the temperature of a semiconductor substrate, a light irradiation step for irradiating the semiconductor substrate with light, and light for detecting light after being irradiated on the semiconductor substrate. Based on a detection step, a spectrum analysis step for analyzing a spectrum of light detected by the light detection step, an analysis result by the spectrum analysis step, and a temperature characteristic of an absorption wavelength caused by a band gap in the semiconductor substrate A temperature calculating step for calculating the temperature of the light irradiation position on the semiconductor substrate; and a light moving step for moving the irradiation position by moving the light irradiated on the semiconductor substrate. The irradiation position by detecting the light scattered in the light detection step And measuring the temperature.

  According to the above configuration, the temperature distribution in the semiconductor substrate can be measured by changing the irradiation position of the light, not the temperature at one point of the semiconductor substrate.

  The semiconductor device manufacturing apparatus according to the present invention is a semiconductor device manufacturing method for manufacturing a semiconductor device by forming a thin film on the surface of the semiconductor substrate, and the temperature for measuring the temperature of the semiconductor substrate by the temperature measuring method. Including a measuring step, a temperature adjusting step for adjusting the temperature of the semiconductor substrate based on the temperature, and a thin film forming step for forming a thin film on the semiconductor substrate whose temperature is adjusted by the temperature adjusting step. To do.

  According to the said structure, based on the temperature of the board | substrate obtained with the said temperature measurement method, the temperature of the said semiconductor substrate is adjusted and a thin film is formed. Thereby, the thin film can be formed on the semiconductor at a temperature suitable for the growth of the thin film. Furthermore, the temperature distribution in the semiconductor substrate and between the substrates can be adjusted well. Therefore, the yield in semiconductor device manufacturing is improved, and the quality of the semiconductor device is improved.

  The temperature measuring device according to the present invention is a temperature measuring device for measuring a temperature of a semiconductor substrate, a light irradiating means for irradiating the semiconductor substrate with light, and light for detecting light after being irradiated on the semiconductor substrate. A detection means, a spectrum analysis means for analyzing a spectrum of light detected by the light detection means, an analysis result by the spectrum analysis means, and a temperature characteristic of an absorption wavelength caused by a band gap in the semiconductor substrate. A temperature calculating means for calculating the temperature of the light irradiation position on the semiconductor substrate; and a light moving means for moving the irradiation position by moving the light irradiated on the semiconductor substrate. The temperature of the irradiation position is measured by detecting the light scattered in step 1 by the light detection means.

  According to the above configuration, since the temperature measuring device uses the scattered light, it is not necessary to set the positional relationship between the light irradiating unit and the light detecting unit as a specular reflection relationship. The degree of freedom of arrangement of the irradiation means and the light detection means increases. Further, high-precision alignment between the light irradiation means and the light detection means is not required.

  Furthermore, since the temperature measuring device includes the light moving means, it is possible to measure not only the temperature at one point on the semiconductor substrate but also the temperature at an arbitrary position on the semiconductor substrate.

  Further, since the scattered light is used as described above, it is not necessary to move the light detection means so as to follow the change in the irradiation position. As a result, the temperature at an arbitrary position on the semiconductor substrate can be measured while simplifying the structure of the temperature measuring device.

  According to another aspect of the present invention, there is provided a semiconductor device manufacturing apparatus including the temperature measuring device and temperature adjusting means for adjusting the temperature of the semiconductor substrate, and manufacturing a semiconductor device by forming a thin film on the surface of the semiconductor substrate. A semiconductor device manufacturing apparatus, comprising: control means for controlling the temperature adjusting means based on the temperature information of the semiconductor substrate obtained by the temperature measuring apparatus.

  According to the above configuration, the semiconductor substrate can be adjusted to have a temperature suitable for thin film formation and a uniform temperature distribution. As a result, it is possible to improve the yield in manufacturing semiconductor devices and to manufacture high-quality devices. For example, when the semiconductor device is an optical element such as a semiconductor laser, there is an effect that variation in emission wavelength of each element is reduced.

  The temperature measurement method according to the present invention is a temperature measurement method for measuring the temperature of a semiconductor substrate, wherein a light irradiation step of irradiating the semiconductor substrate with light and detecting light after being irradiated on the semiconductor substrate are detected. Based on the temperature characteristics of the absorption wavelength caused by the band gap in the semiconductor substrate, the spectrum analysis step for analyzing the spectrum of the light detected by the light detection step, the analysis result by the spectrum analysis step, A temperature calculating step for calculating the temperature of the light irradiation position on the semiconductor substrate, and a light moving step for moving the irradiation position by moving the light irradiated on the semiconductor substrate, By detecting the light scattered at the irradiation position by the light detection step, the illumination is performed. And measuring the temperature of the position.

  According to the above configuration, the temperature distribution in the semiconductor substrate can be measured by changing the irradiation position of the light, not the temperature at one point of the semiconductor substrate.

  The semiconductor device manufacturing apparatus according to the present invention is a semiconductor device manufacturing method for manufacturing a semiconductor device by forming a thin film on the surface of the semiconductor substrate, and the temperature for measuring the temperature of the semiconductor substrate by the temperature measuring method. Including a measuring step, a temperature adjusting step for adjusting the temperature of the semiconductor substrate based on the temperature, and a thin film forming step for forming a thin film on the semiconductor substrate whose temperature is adjusted by the temperature adjusting step. To do.

  According to the said structure, a thin film can be formed in the said semiconductor at the temperature suitable for the growth of a thin film. Furthermore, the temperature distribution in the semiconductor substrate and between the substrates can be adjusted well. Therefore, the yield in semiconductor device manufacturing is improved, and the quality of the semiconductor device is improved.

  An embodiment of the present invention will be described below with reference to FIGS.

  FIG. 1 shows the configuration of an MBE apparatus 1 (semiconductor device manufacturing apparatus) according to the present embodiment. The MBE apparatus 1 epitaxially grows a crystal of a semiconductor thin film material on the surface of a semiconductor substrate 2, and in addition to the members shown in FIG. 1, members necessary for epitaxial growth, that is, a molecular beam cell, a cell shutter, Although a member such as a vacuum gauge is provided, these are not shown for convenience of explanation.

  As shown in FIG. 1, the MBE apparatus 1 includes a chamber 10, and a substantially circular manipulator 11 is provided in the chamber 10. A substrate holder 12 for holding a plurality of semiconductor substrates 2 is mounted on the lower end surface of the manipulator 11. In the present embodiment, a total of seven semiconductor substrates 2 are arranged on the substrate holder 12, one at the center and six so as to surround the periphery.

  As described above, the MBE apparatus 1 is an apparatus for manufacturing a semiconductor device by epitaxially growing a semiconductor thin film on the surface of the semiconductor substrate 2 held by the substrate holder 12. In the present embodiment, the “front surface” of the semiconductor substrate 2 is the lower end surface side in FIG. 1, and the “back surface” is the opposite surface. Hereinafter, as shown in FIGS. 1 and 2, the “surface” side of the semiconductor substrate 2 is referred to as “lower side”, and the opposite side is referred to as “upper side”.

  A rotating shaft 13 is provided at the center of the surface (upper surface) opposite to the surface on which the substrate holder is mounted of the manipulator 11. The rotating shaft 13 has an end opposite to the manipulator 11 that protrudes from the chamber 10, and an end that protrudes outside the chamber 10 is connected to a rotating device 16. When the rotating shaft 13 is rotated by the rotating device 16 (substrate moving means), the manipulator 11 rotates around the rotating shaft 13 in the circumferential direction. As the manipulator 11 rotates in this way, the temperature distribution of the semiconductor substrate 2 can be made uniform. As will be described later, the rotation of the manipulator 11 is also used to measure the temperature distribution of the semiconductor substrate 2. A flag 14 is provided at a portion of the rotating shaft 13 between the chamber 10 and the rotating device 16. The function of the flag 14 will be described in detail later.

  Further, the MBE apparatus 1 includes a substrate temperature measuring device and a temperature adjusting device in order to keep the temperature of the semiconductor substrate 2 at a temperature suitable for thin film growth.

  The substrate temperature measuring apparatus is configured to change the irradiation position of the irradiation light on the semiconductor substrate 2 and the substrate holder 12 by moving the light source 21 (light irradiation means) that emits light toward the semiconductor substrate 2 and the substrate holder 12. A light source moving device 23 (light moving means) to be changed, a light detector 22 (light detecting means) for detecting scattered light generated by the irradiation light being scattered by the semiconductor substrate 2, and scattered light detected by the light detector 22. The spectrum analyzer 24 (spectrum analysis means) that performs the spectrum analysis of the above, and the temperature calculation unit 25a (temperature calculation means) that calculates the temperature of the semiconductor substrate 2 from the result of the spectrum analysis.

  In addition, the temperature adjusting device includes a heater 60 (temperature adjusting means) mounted on the manipulator 11 to adjust the temperature of the semiconductor substrate 2, a heater power supply 61 that supplies current to the heater, and the heater power supply 61 to the heater 60. The temperature control part 25b (control means) which adjusts the electric current amount of is provided. The temperature control unit 25b controls a temperature adjustment unit (not shown) based on the temperature information calculated by the temperature calculation unit 25a, and the temperature adjustment unit adjusts the output of the heater power supply 61 based on this control. is there.

  The temperature calculation unit 25a and the temperature control unit 25b may be realized by hardware, or may be realized by software by executing a predetermined program on the computer 25. In the present embodiment, it is assumed that the temperature control unit 25b is realized by hardware.

  The light source 21 may be provided at a position where the irradiation light can be irradiated toward the surface of the semiconductor substrate 2, that is, a position below the surface of the substrate holder 12 on which the semiconductor substrate 2 is mounted. Further, the photodetector 22 is a position where the irradiation light emitted from the light source 21 to the semiconductor substrate 2 can receive the scattered light scattered by the semiconductor substrate 2, that is, the surface on which the semiconductor substrate 2 of the substrate holder 12 is mounted. What is necessary is just to be provided in the position different from the light source 21 below. Preferably, the photodetector 22 is installed so as to deviate from the specular reflection relationship with respect to the light source 21.

  When light is irradiated onto the substrate 2 from the light source 21, a part of the irradiated light is specularly reflected on the surface of the substrate 2 to become specular reflection light. Further, another part of the irradiation light becomes scattered light as will be described later, and travels in various directions. The scattered light (scattered light) has the temperature information of the substrate 2, but the specular reflection light does not have the temperature information of the substrate 2.

  Therefore, when the light detector 22 is installed so as to deviate from the specular reflection relationship with respect to the light source 21, the S / N value is improved and the temperature measurement accuracy is improved because the light is not received by the specular reflection light. .

  In the present embodiment, the light source 21 is provided outside the chamber 10 so that the semiconductor substrate 2 can be irradiated with irradiation light from a direction inclined with respect to the normal direction of the substrate holder 12. A view port 30 is provided on the wall of the chamber 10 so that light emitted from the light source 21 enters the chamber 10 through the view port 30.

  In the present embodiment, the photodetector 22 is provided outside the chamber 10 in the normal direction of the substrate holder 12. Note that a viewport 31 is provided on the wall of the chamber 10 so that scattered light enters the photodetector 22 outside the chamber 10 via the viewport 31.

  The viewports 30 and 31 are preferably configured so that the observation window can be heated to a high temperature in order to avoid fogging of the view glass during film formation.

  Note that the positional relationship between the light source 21 and the photodetector 22 described above is merely an example, and is essentially synonymous if the light source 21 and the photodetector 22 are not in a mirror reflection positional relationship with respect to the semiconductor substrate 2. It becomes. For example, the light source 21 may be arranged in the normal direction of the surface of the semiconductor substrate 2 and the photodetector 22 may be arranged in a direction inclined from the normal direction. Both the light source 21 and the photodetector 22 may be arranged in the above method. You may arrange | position in the position which is not in the relation of specular reflection in the direction inclined from the line direction.

  When measuring the temperature of the semiconductor substrate 2, irradiation light is irradiated from the light source 21 toward the semiconductor substrate 2 and the substrate holder 12. White light can be used as the irradiation light. After exiting the light source 21, the light enters the chamber 10 through the view port 30, and is applied to the semiconductor substrate 2 and the substrate holder 12. Further, the irradiation light is collected by an optical system provided in the light source 21 so as to form a spot having a predetermined size on the semiconductor substrate 2 and the substrate holder 12. Since the spot size affects the position resolution in the temperature measurement of the semiconductor substrate 2, it is preferable that the spot size be as small as possible.

  A part of the light that has not been specularly reflected among the irradiated light irradiated on the semiconductor substrate 2 travels into the semiconductor substrate and is scattered on the inside of the semiconductor substrate. Pass through and proceed in various directions. The back surface of the semiconductor substrate is a surface opposite to the surface of the semiconductor substrate, and the inner side of the substrate has the highest surface roughness and the largest scattering probability in the semiconductor substrate.

  Thus, while passing through the semiconductor substrate 2, light having a wavelength equal to or shorter than the band gap of the semiconductor constituting the semiconductor substrate 2 is absorbed in the semiconductor, and only light having a wavelength component that has not been absorbed is described above. As described above, the light travels through the surface of the semiconductor substrate 2 as scattered light.

  A part of this scattered light passes through the viewport 31 and is detected by the photodetector 22. By analyzing the scattered light by the spectrum analyzer 24, a wavelength spectrum can be obtained. Information on the wavelength (absorption wavelength) of light absorbed by the semiconductor substrate 2 can be obtained from this wavelength spectrum, and the size of the band gap of the semiconductor material constituting the semiconductor substrate 2 is calculated based on the information. Can do. Since the size of the band gap of the semiconductor material depends on the temperature of the semiconductor material, the absorption wavelength changes depending on the temperature of the semiconductor material. Therefore, the correlation between the absorption wavelength and the temperature is recorded in the computer 25 in advance, and the substrate temperature can be calculated from this correlation and the obtained absorption wavelength value.

  Note that the correlation between the absorption wavelength and the temperature may be confirmed by conducting a preliminary experiment in advance. In the preliminary experiment, the actual temperature of the semiconductor substrate 2 may be measured by installing a thermocouple on the surface of the semiconductor substrate 2.

  The temperature calculation unit 25a performs such calculation and stores the substrate temperature data obtained by the calculation in the storage unit 25c in the computer 25. In the storage unit 25c, the substrate temperature data is stored in association with substrate position data indicating the position on the semiconductor substrate 2 where the temperature is measured. The substrate position data will be described later.

  As described above, the substrate temperature measuring device of the MBE apparatus 1 uses the scattered light from the semiconductor substrate 2 to determine the size of the band gap of the semiconductor substrate 2 and determines the temperature of the semiconductor substrate 2 from the size of this band gap. Is to be calculated. That is, the measurement method does not depend on the amount of light from the semiconductor substrate 2. Therefore, it is difficult to be influenced by radiation from the molecular beam cell when forming a thin film.

  In addition, the influence of other light sources can be subtracted by calculating black body radiation by software on the computer 25. Thereby, white light can be used as the irradiation light from the light source 21 without being modulated.

  The storage unit 25c stores data (target data) relating to the optimum substrate temperature for thin film growth, and the temperature control unit 25b allows the substrate temperature data measured as described above to approach the target data. In addition, the temperature is adjusted by adjusting the amount of current from the heater power supply 61 to the heater 60 described above. In this way, the temperature of the heater 60 is adjusted, and the temperature of the semiconductor substrate 2 is kept optimal.

  Moreover, the MBE apparatus 1 of this Embodiment is provided with the light source moving device 23 as mentioned above. The light source moving device 23 can change the light emission angle and change the light irradiation position on the semiconductor substrate 2 by changing the direction of the light source with respect to the semiconductor substrate 2. Thereby, not only one point on the semiconductor substrate 2 but also an arbitrary position on the semiconductor substrate 2 can be irradiated with light.

  Here, in this substrate temperature measuring device, the light detector 22 detects the scattered light from the semiconductor substrate 2 and calculates the temperature. Therefore, the light source moving device 23 changes the light irradiation position on the semiconductor substrate 2. However, it is not necessary to move the photodetector 22 in accordance with the change. This is because the substrate temperature measurement apparatus calculates the substrate temperature not based on the intensity of light from the semiconductor substrate 2 but based on the absorption wavelength by the semiconductor substrate 2, and is thus detected by moving the photodetector 22. This is because even if a change occurs in the intensity of light, the measurement result is hardly affected in principle. That is, in this substrate temperature measuring apparatus, the temperature distribution of the semiconductor substrate 2 can be measured while the light source 21 is moved and the photodetector 22 is fixed. Therefore, it is not necessary to provide a moving device for the photodetector 22, and the device configuration can be simplified.

  Further, the MBE apparatus 1 can measure the temperature distribution of the semiconductor substrate 2 more widely by rotating the manipulator 11. The temperature distribution measurement method at this time will be described below with reference to FIGS. FIG. 2 is a flowchart showing a method of measuring the temperature distribution in the semiconductor substrate 2 by rotating the manipulator.

  As already described, the manipulator 11 rotates around the rotation shaft 13. A flag 14 is attached to the rotary shaft 13, and the flag 14 includes a notch 15. As shown in FIG. 1, a position sensor 18 is provided at a position where the notch 15 passes when the manipulator 11 rotates, so that the notch 15 can be recognized. Thus, for example, when the position where the notch 15 passes the position sensor 18 is defined as the origin of the rotational position, the position information indicating that the notch 15 has passed the origin position is obtained from the position sensor 18 to the irradiation position identification unit 25d (measurement position). To the specific means) and sent to it for recognition.

  Further, information indicating the rotation speed of the manipulator is sent from the rotating device 16 and information showing the swing angle of the light source 21 is sent from the light source moving device 23 to the irradiation position identifying unit 25d.

  With the above configuration, the irradiation position identification unit 25d has information that the manipulator has passed the origin position, information that indicates the rotation speed of the manipulator, information that indicates the swing angle of the light source, and arrangement of the semiconductor substrate 2 on the substrate holder 12. Therefore, it is possible to identify which position on which semiconductor substrate 2 the irradiation position of the irradiation light from the light source 21 is. The irradiation position identified by the irradiation position identification unit 25d is stored in the storage unit 25c in association with the substrate temperature data described above as substrate position data.

  The rotation information detection method described above is merely an example. For example, the rotation device 16 may be provided with a rotary encoder, and the rotation information may be detected by the rotary encoder.

  The flow of processing when measuring the temperature of the semiconductor substrate 2 will be described based on the flowchart of FIG. First, the irradiation position of the irradiation light from the light source 21 is moved to the reference point on the semiconductor substrate 2 by the light source moving device 23, and the light source 21 is fixed at that position (step S1). In the case of the present embodiment, the outer peripheral portion of the semiconductor substrate 2 disposed on the outer peripheral side of the substrate holder 12 is set as the reference point. However, the present invention is not limited thereto, and an arbitrary position on the substrate holder 12 is set as the reference point. Can do.

  Next, a substrate temperature measurement operation is performed (steps S2 to S6). First, the manipulator 11 is rotated, and temperature measurement is started when the notch 15 passes the position sensor 18 (steps S2 and S3). This temperature measurement is continued with the light source 21 fixed and the manipulator 11 rotated. Then, when the notch 15 is recognized again by the position sensor 18, the temperature measurement is stopped (steps S4 and S5). As a result, the temperature of the semiconductor substrate 2 is measured along the circumferential direction of the substrate holder 12.

  In this way, the temperature of the circumferential portion around the rotating shaft 13 on the substrate holder 12 is measured. The substrate temperature data calculated by the temperature calculation unit 25a by this measurement is stored in the storage unit 25c of the computer 25 together with the corresponding substrate position data identified by the irradiation position identification unit 25d (step S6). Note that the substrate temperature data to be stored is not necessarily data indicating the substrate temperature itself, and may be any value that can be converted into the substrate temperature. For example, it may be data indicating an output voltage value from the spectrum analyzer 24.

  When the temperature is measured while rotating the manipulator 11 in this manner, the substrate holder 12 is irradiated with irradiation light in a portion where the semiconductor substrate 2 does not exist. In this portion, that is, the gap between the semiconductor substrates 2, the substrate temperature data is not calculated by the temperature calculation unit 25 a and is recorded as missing substrate temperature data. This is because the temperature measurement apparatus performs temperature measurement using the band gap of the semiconductor material constituting the semiconductor substrate 2. The material of the substrate holder 12 is usually a metal material such as molybdenum and not a semiconductor material. Therefore, the temperature cannot be measured with this temperature measuring apparatus, and the substrate temperature data is lost. In other words, since the temperature measuring apparatus can recognize the gap between the semiconductor substrates 2 in this way, each semiconductor substrate 2 on the substrate holder 12 can be identified.

  As described above, when the substrate temperature measurement operation shown in steps S2 to S6 is completed, it is determined whether or not the measurement at the final irradiation position is completed (step S7). The light source moving device 23 moves the irradiation position of the irradiation light (step S9). At this time, the irradiation position of the irradiation light is moved by a preset distance in the radial direction of the substrate holder. In the present embodiment, since the measurement start point is set outside the substrate holder 12, the irradiation position of the irradiation light is moved to the center side of the substrate holder 12 by a certain distance. When the irradiation position is determined in this way, the operation from step S1 is performed again from that position.

  As described above, the operations in steps S2 to S6 are repeated, the temperature is measured for the concentric circles around the rotation shaft 13 on the substrate holder 12, and the temperature of the entire surface of the semiconductor substrate 2 on the substrate holder 12 is measured.

  When the temperature of the entire surface of the semiconductor substrate 2 on the substrate holder 12 is thus measured (step S7, Yes), the computer 25 arranges the measurement results for each circumference as temperature distributions on concentric circles. The temperature distribution in the semiconductor substrate 2 is calculated, and the temperature distribution is visually displayed on a display device (not shown) (step S8). As a visual display, for example, a display as shown in FIG. 5 may be performed.

  Further, in order to move the irradiation position of the irradiation light, as described with reference to FIG. 1, in addition to changing the direction of the light source 21, it rotates between the light source 21 and the viewport 30 as shown in FIG. A mirror 40 may be provided, and the position of the irradiation light applied to the semiconductor substrate 2 may be changed by changing the angle of the rotary mirror 40 with the mirror rotating device 41. In FIG. 3, members having the same functions as those shown in FIG. 1 are given the same reference numerals, and descriptions thereof are omitted. In this configuration, the light emitted from the light source 21 is reflected by the rotating mirror 40, and the reflected light is irradiated onto the semiconductor substrate 2. By rotating the rotating mirror 40, the irradiation position of the reflected light on the semiconductor substrate 2 can be moved.

  In the present embodiment, the light irradiation position is moved from the outer peripheral side of the substrate holder 12 toward the center, but is not limited to this, and the light irradiation position is directed from the center side of the substrate holder 12 toward the outer peripheral side. It may be moved. In the present embodiment, the light irradiation position is fixed and only the manipulator 11 is rotated during temperature measurement. However, the present invention is not limited to this, and the manipulator 11 is simultaneously rotated while moving the irradiation position, and the substrate holder. You may measure in the shape of a spiral spreading from the center of 12 to the outside.

  In addition, as the heater 60 for adjusting the temperature of the semiconductor substrate 2, it is preferable to use a heater 60 composed of a divided heater as shown in FIG. FIG. 4 is a plan view schematically showing the structure of the heater 60 provided in the manipulator 11.

  As shown in FIG. 4, the heater 60 is configured by arranging concentric divided heaters 60 a to 60 g in order from the center of the manipulator 11 to the outside on the surface on which the semiconductor substrate 2 of the manipulator 11 is mounted. ing.

  The temperature of the divided heaters 60a to 60g can be adjusted separately. Therefore, if there is a part lower than the set temperature from the result of the temperature distribution of the semiconductor substrate 2 measured by the temperature measuring device described above, the temperature of only the divided heater corresponding to that part is increased, and the temperature of that part is increased. Can be adjusted. On the other hand, when there is a portion where the temperature is too high, the optimum temperature can be maintained by lowering the temperature of the divided heater in that portion.

  In addition to the configuration shown in FIG. 4, the heater 60 may be further divided in the radial direction in addition to the concentric division.

  Further, it is possible to obtain a more uniform substrate temperature distribution by modifying the shape of the heater for heating the substrate based on the measurement result of the substrate temperature distribution.

  For example, when the surface of the substrate holder on which the substrate is mounted is roughly divided into three regions, the center portion, the intermediate portion, and the peripheral portion in order from the inside, the temperature of the central portion and the peripheral portion is determined from the measurement result of the substrate temperature distribution. Suppose that the temperature in the middle part is low and the temperature is high. In that case, the heater 60 provided with the concentric division | segmentation heaters 60a-g as shown in FIG. 4 should just be used for the heater for board | substrate heating. If the temperature of the divided heaters a, b, f, and g is increased and the temperature of the divided heaters c to e is decreased, the temperature distribution can be adjusted more uniformly.

  If there is a temperature difference between the substrates, a divided heater having a shape along the mounting position of the substrate on the manipulator (shown by a dotted line in FIG. 4) may be provided, and the temperature of these divided heaters may be adjusted separately.

  In the present embodiment, as described above, the temperature of the semiconductor substrate 2 is adjusted by adjusting the amount of current supplied to the heater 60 by the temperature controller 25b (see FIG. 1). At this time, the current amount may be adjusted in proportion to the measured temperature distribution, or the current amount may be adjusted in proportion to a value obtained by correcting the temperature distribution. When the correction is performed, a database indicating the correlation between the temperature distribution and the current amount may be provided in the computer 25 and used.

  FIG. 5 shows the result of actually measuring the temperature of the semiconductor substrate 2 using the MBE apparatus 1 of the present embodiment.

  In actual measurement, a gallium arsenide substrate having a diameter of 3 inches was used as the semiconductor substrate 2, the rotation speed of the manipulator 11 was set to 30 rpm (30 rotations per minute), which is a crystal growth condition, and the set substrate temperature was set to 454 ° C.

  As shown in FIG. 5, the temperature distribution of the substrate could be in the range of 453.1 to 455.0 ° C. in all pixels (measurement region). Of these, only 2 pixels located in the peripheral area were in the range of 453.1 to 454.0 ° C. As described above, by using the temperature measuring device and the MBE device of the present embodiment, it was possible to obtain a very uniform temperature distribution. As a result, the variation in all element characteristics in all the semiconductor substrates 2 is extremely reduced.

  Next, an example of a semiconductor device manufacturing method using the MBE apparatus 1 shown in FIG. 1 will be described with reference to FIG. FIG. 6 is a flowchart showing a semiconductor device manufacturing method using the MBE apparatus 1. In this manufacturing method, a crystal of a semiconductor thin film material is epitaxially grown on the surface of the semiconductor substrate 2. In the computer 25 of the MBE apparatus 1, it is assumed that the temperature (target temperature) of the semiconductor substrate 2 that is optimal for thin film formation and a temperature distribution range (allowable range) that is allowable for the target temperature are set in advance. .

  First, the substrate holder 12 on which the semiconductor substrate 2 is mounted is set on the manipulator 11, and the semiconductor substrate 2 is heated by the heater 60 (step S11). After a predetermined time required for the temperature of the semiconductor substrate 2 to rise to the target temperature, the temperature distribution of the semiconductor substrate 2 is measured as described above (step S12).

  If the temperature distribution of the semiconductor substrate 2 is within the allowable range for the target temperature (step S13, Yes), the process proceeds to the thin film growth step of step S15. That is, by opening a cell shutter or a substrate shutter (not shown), thin film growth on the semiconductor substrate 2 is started (step S15).

  On the other hand, if the temperature distribution of the semiconductor substrate 2 is out of the allowable range with respect to the target temperature (No in step S13), the temperature distribution of the semiconductor substrate 2 is controlled by controlling the output current to the heater 60 as described above. Adjustment is made so as to be within the allowable range (step S14). Then, by repeating the process from step S12 again, the temperature distribution of the semiconductor substrate 2 is finally set to fall within the allowable range.

  The substrate temperature is measured again during or after the thin film growth step in step S15 (step S16). As a result, if the temperature distribution of the semiconductor substrate 2 is within the allowable range with respect to the target temperature (step S17, Yes) and there is no need to further grow a thin film (step S18, No), the thin film growth is completed and manufactured. The removed semiconductor device is carried out of the chamber 10. On the other hand, when a further thin film is grown (step S19, Yes), the thin film growth process of step S15 is continued or a process of growing the next thin film layer is performed.

  If the temperature distribution of the semiconductor substrate 2 is out of the allowable range with respect to the target temperature in step S17, the temperature distribution of the semiconductor substrate 2 is controlled by controlling the output current to the heater 60 as in S14. (Step S18), and the substrate temperature can be constantly set within an allowable range during the film growth process.

  The method for producing a semiconductor device according to the present invention is not limited to the method shown in FIG. 6, and the temperature may be measured during the thin film growth process to adjust the heater temperature.

  The temperature measuring device of the present invention does not need to use an optical path body such as an optical fiber to guide irradiation light and scattered light into the chamber 10, that is, it is not necessary to provide a member for blocking the molecular beam in the chamber 10, It is possible to measure the temperature of the semiconductor substrate 2 during thin film formation.

  In addition, in the MBE apparatus 1, in addition to the semiconductor substrate 2 before the thin film is formed, the temperature of the semiconductor substrate 2 during the thin film formation and the semiconductor substrate 2 after the thin film formation can be measured.

  This is because part of the light irradiated to the semiconductor substrate 2 during or after the formation of the thin film passes through the thin film and travels inside the semiconductor substrate, and is scattered on the back surface of the semiconductor substrate 2 as described above. Therefore, the temperature of the semiconductor substrate can be measured as described above by detecting the scattered light with the photodetector 22.

  The temperature measuring device of the present invention can measure the temperature distribution of the substrate without complicated alignment between the light irradiation means and the light detection means, and is not easily affected by radiation of a molecular beam cell, etc. Even in the middle, it has a special effect that accurate temperature measurement is possible. Therefore, it can be suitably used as a substrate temperature measuring device for a semiconductor device manufacturing apparatus. Moreover, the semiconductor device manufacturing apparatus provided with this temperature measuring apparatus is very useful because it can manufacture a semiconductor device with high quality and small variations in quality.

It is a block diagram which shows the MBE apparatus which concerns on embodiment of this invention, and its temperature measurement mechanism. It is a flowchart which shows the temperature measuring method which concerns on embodiment of this invention. It is a block diagram which shows the MBE apparatus which concerns on other embodiment of this invention, and its temperature measurement mechanism. It is sectional drawing which shows the structure of the heater which concerns on this Embodiment. It is drawing which shows the result of the substrate temperature measurement using the substrate temperature measuring apparatus which concerns on embodiment of this invention. It is a flowchart which shows the semiconductor device manufacturing method which concerns on embodiment of this invention. It is a block diagram which shows the conventional MBE apparatus and its temperature measurement mechanism.

Explanation of symbols

1 MBE equipment (semiconductor device manufacturing equipment)
2 Semiconductor substrate 10 Chamber 11 Manipulator 12 Substrate holder 13 Rotating shaft 14 Flag 16 Rotating device (Substrate moving means)
18 Position sensor 21 Light source (light irradiation means)
22 Photodetector (light detection means)
23 Light source moving device (light moving means)
24 Spectrum analyzer (spectrum analysis means)
25 Computer 25a Temperature calculation part (temperature calculation means)
25b Temperature controller (control means)
25c Storage unit 25d Irradiation position identification unit (measurement position specifying means)
40 Rotating mirror (light moving means)
41 Mirror rotating device 60 Heater (temperature adjusting means)

Claims (9)

In a temperature measuring device that measures the temperature of a semiconductor substrate,
A light irradiation means for irradiating the semiconductor substrate with light;
A light detecting means for detecting light after being irradiated on the semiconductor substrate;
Spectrum analyzing means for analyzing the spectrum of light detected by the light detecting means;
Based on the analysis result by the spectrum analysis means and the temperature characteristics of the absorption wavelength due to the band gap in the semiconductor substrate, a temperature calculation means for calculating the temperature of the light irradiation position in the semiconductor substrate;
A light moving means for moving the irradiation position by moving the light irradiated to the semiconductor substrate;
A temperature measuring apparatus for measuring the temperature of the irradiation position by detecting light scattered at the irradiation position by the light detection means.   The temperature measuring apparatus according to claim 1, wherein the light moving unit moves the irradiation position by changing an irradiation angle of light directed toward the semiconductor substrate.   2. The temperature measurement according to claim 1, wherein a positional relationship between the light irradiation unit and the light detection unit is set so as to be out of a specular reflection relationship with respect to the semiconductor substrate. apparatus.   The temperature measuring device according to claim 1, further comprising a measurement position specifying unit that specifies a temperature measurement position in the semiconductor substrate based on the irradiation position. Substrate moving means for moving the semiconductor substrate relative to the irradiation position;
The measurement position specifying means for specifying the measurement position of the temperature in the semiconductor substrate based on the irradiation position and the position of the semiconductor substrate determined by the substrate moving means is further provided. The temperature measuring apparatus according to 1.   It is a semiconductor device manufacturing apparatus which manufactures a semiconductor device by forming a thin film on the surface of a semiconductor substrate, Comprising: The temperature of the said board | substrate is measured with the temperature measuring apparatus of any one of Claims 1-5. A semiconductor device manufacturing apparatus. The temperature measuring device according to any one of claims 1 to 5,
Temperature adjusting means for adjusting the temperature of the semiconductor substrate,
A semiconductor device manufacturing apparatus for manufacturing a semiconductor device by forming a thin film on the surface of the semiconductor substrate,
A semiconductor device manufacturing apparatus, comprising: control means for controlling the temperature adjusting means based on temperature information of the semiconductor substrate obtained by the temperature measuring apparatus. In a temperature measurement method for measuring the temperature of a semiconductor substrate,
A light irradiation step of irradiating the semiconductor substrate with light;
A light detecting step for detecting light after being irradiated on the semiconductor substrate;
A spectral analysis step for analyzing the spectrum of the light detected by the light detection step;
A temperature calculation step of calculating the temperature of the light irradiation position in the semiconductor substrate based on the analysis result of the spectrum analysis step and the temperature characteristics of the absorption wavelength caused by the band gap in the semiconductor substrate;
A light moving step of moving the irradiation position by moving the light irradiated to the semiconductor substrate,
A temperature measurement method, wherein the temperature at the irradiation position is measured by detecting light scattered at the irradiation position by the light detection step. A semiconductor device manufacturing method for manufacturing a semiconductor device by forming a thin film on a surface of a semiconductor substrate,
A temperature measuring step of measuring the temperature of the semiconductor substrate by the temperature measuring method according to claim 8;
A temperature adjusting step of adjusting the temperature of the semiconductor substrate based on the temperature;
And a thin film forming step of forming a thin film on the semiconductor substrate, the temperature of which is adjusted by the temperature adjusting step.

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