CN112501594A - System and method for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace - Google Patents
System and method for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 16
- 230000007246 mechanism Effects 0.000 claims abstract description 31
- 230000004044 response Effects 0.000 claims abstract description 5
- 230000033001 locomotion Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The embodiment of the invention discloses a system for automatically adjusting the position of a base relative to a preheating ring in an epitaxial furnace, which comprises: the device comprises a laser measuring instrument, a controller and a driving mechanism; the laser measuring instrument is configured to measure actually measured relative position information between the base and the preheating ring and transmit the actually measured relative position information to the controller; a controller configured to compare the measured relative position information with reference relative position information when the susceptor is at a reference position with respect to the preheating ring to obtain a deviation between the measured relative position information and the reference relative position information, and configured to generate a drive control instruction based on the deviation and send the drive control instruction to the driving mechanism, in response to the deviation being greater than a set threshold, wherein the drive control instruction is for instructing the driving mechanism to drive the susceptor to move toward the reference position with respect to the preheating ring; a drive mechanism configured to drive the base according to the drive control instruction.
Description
Technical Field
The invention relates to the technical field of semiconductor production, in particular to a system and a method for automatically adjusting the position of a base relative to a preheating ring in an epitaxial furnace.
Background
The main structure of the apparatus for vapor phase epitaxial growth of silicon wafers at present, i.e., an epitaxial furnace 1A, is shown in fig. 1. The epitaxial furnace 1A may include:
a susceptor 10A, the susceptor 10A being used for carrying a silicon wafer W;
a support shaft 20A for supporting the susceptor 10A and driving the susceptor 10A to rotate about the central axis XA at a speed during epitaxial growth so that the silicon wafer W rotates along with the susceptor 10A, as shown by an arrow in fig. 1;
an upper quartz bell jar 30A and a lower quartz bell jar 40A, the upper quartz bell jar 30A and the lower quartz bell jar 40A enclosing together a reaction chamber CA in which the susceptor 10A and the support shaft 20A are accommodated;
a preheating ring 50A disposed radially outside the susceptor 10A, wherein the preheating ring 50A substantially divides the reaction chamber CA into an upper reaction chamber CA1 and a lower reaction chamber CA2 together with the susceptor 10A;
a first gas inlet 60A, the first gas inlet 60A being used for delivering a reaction gas, such as SiHCl, into the upper reaction chamber CA13Silicon source gas, hydrogen gas, and B2H6Or pH3Dopant gas, for example, to react silicon source gas with hydrogen gas to generate silicon atoms and deposit them on the wafer W to grow an epitaxial layer on the wafer W, while doping the epitaxial layer with dopant gas to obtain a desired resistivity, wherein the reactant gas contacts the wafer W after being preheated by the preheat ring 50A;
a second gas inlet 70A for delivering purge gas into the lower reaction chamber CA 2;
an exhaust port 80A for exhausting the reaction off-gas out of the reaction chamber RC;
a plurality of heating bulbs 90A disposed at the peripheries of the upper and lower quartz bell jars 30A and 40A and for providing a high temperature environment for vapor phase epitaxial deposition in the reaction chamber CA through the upper and lower bell jars 30A and 40A.
Since the susceptor 10A needs to rotate about the central axis XA, a certain gap needs to be maintained between the susceptor 10 and the preheating ring 50A to prevent collision with the preheating ring 50A during rotation of the susceptor 10A; during the epitaxial growth, the size of the gap between the susceptor 10A and the preheating ring 50A and the height difference between the susceptor 10A and the preheating ring 50A affect the flow between the reaction gas in the upper reaction chamber CA1 and the purge gas in the lower reaction chamber CA2, so that maintaining a reasonable gap and height difference is advantageous for the uniformity of the epitaxial layer thickness and the resistivity distribution, which are important indicators for evaluating the quality of the epitaxial wafer.
However, due to the factors such as small movement, swing during rotation, and external vibration caused by the difference in expansion coefficient between the materials during temperature rise and fall, the susceptor 10A and the preheating ring 50A tend to move relatively to each other during long-term operation of the epitaxial furnace 1A, so that the gap and the height difference between the two change, for example, the support shaft 20A may tilt, thereby affecting the quality of the epitaxial wafer. Therefore, the relative position between the susceptor 10A and the preheating ring 50A needs to be adjusted periodically so that the gap and the height difference therebetween are within the required range.
Conventionally, the support shaft 20A is driven by a manually operated driving device to adjust the position of the susceptor 10A supported by the support shaft 20A with respect to the preheating ring 50A, but such an adjustment method has the following problems. Firstly, the manual operation has high operation difficulty and high working strength, and requires experienced technical personnel and two to three personnel to be matched with each other; secondly, the adjustment takes longer time, so that the recovery time of the equipment is delayed, and the productivity is reduced; finally, manual operation is greatly affected by personnel, accuracy cannot be effectively guaranteed, and rework is needed when necessary.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention are intended to provide a system and a method for automatically adjusting the position of a susceptor with respect to a preheating ring in an epitaxial furnace, which can automatically adjust the position of the susceptor with respect to the preheating ring, and obtain a higher adjustment speed and adjustment accuracy.
The technical scheme of the invention is realized as follows:
in a first aspect, embodiments of the present invention provide a system for automatically adjusting a position of a susceptor relative to a preheat ring in an epitaxial furnace, the system comprising: the device comprises a laser measuring instrument, a controller and a driving mechanism; wherein,
the laser measuring instrument is configured to measure actually measured relative position information between the susceptor and the preheating ring and transmit the actually measured relative position information to the controller;
the controller is configured to compare the measured relative position information with reference relative position information when the susceptor is at a reference position relative to the preheating ring to obtain a deviation between the measured relative position information and the reference relative position information, and is configured to generate a drive control instruction based on the deviation and send the drive control instruction to the drive mechanism corresponding to the deviation being greater than a set threshold, wherein the drive control instruction is used for instructing the drive mechanism to drive the susceptor to move towards the reference position relative to the preheating ring;
the driving mechanism is configured to drive the base according to the driving control instruction.
In a second aspect, embodiments of the present invention provide a method for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace, the method being applied to the system according to the first aspect, and the method may include:
the laser measuring instrument measures actually-measured relative position information between the base and the preheating ring and transmits the actually-measured relative position information to the controller;
the controller compares the measured relative position information with reference relative position information when the susceptor is at a reference position with respect to the preheating ring to obtain a deviation between the measured relative position information and the reference relative position information, and generates a drive control instruction based on the deviation and transmits the drive control instruction to the drive mechanism in response to the deviation being greater than a set threshold, wherein the drive control instruction is for instructing the drive mechanism to drive the susceptor to move toward the reference position with respect to the preheating ring,
and the driving mechanism drives the base according to the driving control instruction.
The embodiment of the invention provides a system and a method for automatically adjusting the position of a base relative to a preheating ring in an epitaxial furnace; the automatic adjustment of the position of the base relative to the preheating ring is realized, manual operation is not needed to control the driving device, the operation difficulty and the time consumption are greatly reduced, the operation can be independently completed by a single person, and the adjustment operation can be quickly completed, so that the daily maintenance efficiency of equipment is improved; further, the acquisition and transmission of the relative position information between the susceptor and the preheating ring, the acquisition of the deviation between the actually measured relative position information and the reference relative position information, the generation of the drive control command, the operation of the drive mechanism, and the like are realized by a computerized method, and therefore, the adjustment accuracy can be improved as compared with the manual operation.
Drawings
FIG. 1 is a schematic structural diagram of a current epitaxial furnace for vapor phase epitaxial growth of silicon wafers;
FIG. 2 is a schematic diagram of a system for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace according to an embodiment of the present invention;
FIG. 3 is an enlarged schematic view of a portion of the dashed box of FIG. 2;
FIG. 4 is a schematic view of an embodiment of a drive mechanism of the system according to the present invention;
FIG. 5 is a schematic view of an embodiment of a specific drive pattern in the drive mechanism of the system according to the present invention;
FIG. 6 is a schematic view of an example of movement of the second end of the support member relative to the position shown in FIG. 5;
fig. 7 is a schematic diagram of a method for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 2, which illustrates a system 20 for automatically adjusting the position of a susceptor 12 relative to a preheat ring 11 in an epitaxial furnace 1 according to an embodiment of the present invention, wherein only the preheat ring 11 and susceptor 12 of the epitaxial furnace 1 and the axis of rotation X of the susceptor 12 and a silicon wafer W carried on the susceptor 12 are shown in fig. 2 for clarity, other components of the epitaxial furnace 1 can be understood with reference to fig. 1, and the system 20 as shown in fig. 2 may include: a laser measuring instrument 21, a controller 22, and a driving mechanism 23; wherein,
the laser measuring instrument 21 configured to measure measured relative position information between the susceptor 12 and the preheating ring 11 and transmit the measured relative position information to the controller 22;
the controller 22 is configured to compare the measured relative position information with reference relative position information when the susceptor 12 is at a reference position with respect to the preheating ring 11 to obtain a deviation between the measured relative position information and the reference relative position information, and configured to generate a drive control instruction based on the deviation and send the drive control instruction to the drive mechanism 23, in response to the deviation being greater than a set threshold, wherein the drive control instruction is used for instructing the drive mechanism 23 to drive the susceptor 12 to move toward the reference position with respect to the preheating ring 11;
the driving mechanism 23 is configured to drive the base 12 according to the drive control instruction.
The system 20 provided by the embodiment of the invention realizes the automatic adjustment of the position of the base 12 relative to the preheating ring 11, does not need manual operation to control a driving device any more, greatly reduces the operation difficulty and time consumption, can be independently completed by a single person, and can quickly complete the adjustment operation, thereby improving the daily maintenance efficiency of equipment; further, since the acquisition and transmission of the relative position information between the susceptor 12 and the preheating ring 11, the acquisition of the deviation between the measured relative position information and the reference relative position information, the generation of the drive control command, the operation of the drive mechanism, and the like are realized by a computerized method, the adjustment accuracy can be improved more than that of the manual operation.
In a preferred embodiment of the present invention, the measured relative position information is a measured height difference between the susceptor 12 and the preheating ring 11, and correspondingly, the reference relative position information is a reference height difference between the susceptor 12 and the preheating ring 11. Referring to fig. 3, the height difference between the susceptor 12 and the preheating ring 11 may be a distance between the upper surface of the susceptor 12 and the upper surface of the preheating ring 11 in a vertical direction. In general, the deviation between the measured height difference and the reference height difference needs to satisfy-1 ± 0.2mm, or the deviation is within the range, which is considered not to be larger than the set threshold.
In a preferred embodiment of the present invention, the measured relative position information is a measured gap value between the susceptor 12 and the preheating ring 11, and correspondingly, the reference relative position information is a reference gap value between the susceptor 12 and the preheating ring 11. Referring also to fig. 3, the value of the gap between the susceptor 12 and the preheating ring 11 may be the distance in the horizontal direction between the radially outer periphery of the susceptor 12 and the radially inner periphery of the preheating ring 11. In general, the deviation between the measured gap value and the reference gap value needs to be in the range of 2mm to 3mm, or the deviation is within the range, i.e. the deviation is not considered to be larger than the set threshold value.
Although not shown in the drawings, in a preferred embodiment of the present invention, the system 20 may include a plurality of laser meters 21, and accordingly, the above-described measured relative position information may be measured at a plurality of positions in the circumferential direction of the base 12. Preferably, the plurality of locations may be evenly distributed in the circumferential direction of the base 12. For example, the system 20 may include three laser measuring instruments 21, and the three laser measuring instruments 21 respectively measure the measured relative position information at three positions uniformly distributed in the circumferential direction of the base 12, or the three positions are included at an angle of 120 ° along the circumferential direction of the base 12.
It will be appreciated that the above-described measured relative position information may be measured without rotation of the base 12 about the axis of rotation X. However, in the preferred embodiment of the present invention, the above-mentioned measured relative position information is measured with the base 12 rotated about the rotation axis X, thereby enabling the dynamic position of the base 12 to be adjusted.
It is to be understood that, in the above-described embodiment, the adjustment of the position of the susceptor 12 with respect to the preheating ring 11 may be completed once after each time the laser measuring instrument 21 measures the measured relative position information between the susceptor 12 and the preheating ring 11, and therefore the susceptor 12 may be made to approach the reference position constantly with respect to the preheating ring 11 by the plurality of measurements and the plurality of adjustments until the deviation between the measured relative position information obtained by the controller 22 and the reference relative position information is equal to or less than the set threshold value. In this case, the controller 22 may employ a Proportional-Integral-derivative (PID) control algorithm to change the PID gain parameter according to the deviation and the deviation change rate, so as to improve the stability of the dynamic process of the system 20.
In a preferred embodiment of the present invention, referring to fig. 4, the driving mechanism 23 may include:
a drive 231 fixedly arranged relative to the base of said epitaxial furnace 1, fig. 4 not showing the base of the epitaxial furnace 1, but schematically showing by means of a hatched area that the drive 231 is fixedly arranged relative to the base;
a lower bell jar 232 also fixedly disposed relative to the base of the epitaxial furnace 1, the lower bell jar 232 also being schematically shown in fig. 4 by the shaded area fixedly disposed relative to the base, the end of the lower bell jar 232 opposite the susceptor 12 being formed with a bulb 232B;
a support member 233 for supporting the base 12, the support member 233 being formed with a ball socket 233B that matches the ball head 232B;
wherein the driver 231 is configured to drive the support member 233 so that the base 12 can be rotated in any direction about the ball head 232B together with the support member 233.
In a preferred embodiment of the present invention, also referring to fig. 4, the support member 233 extends through the ball head 232B and has a first end 233C and a second end 233D on both sides of the ball head 232B, the base 12 is supported at the first end 233C of the support member 233, and the driver 231 drives the second end 233D of the support member 233.
Specifically, as shown in fig. 4, the support part 233 may include a support shaft 233-1 and a motor 233-2 driving the support shaft 233-1 to rotate so that the base 12 can be driven to rotate, the support shaft 233-1 extends through a ball head 232B and an end of the support base 12 of the support shaft 233-1 may serve as the first end 233C described above, the ball socket 233B described above may be formed in the motor 233-2, and more specifically, a silicone rubber gasket (not shown in the drawing) may be provided between the ball head 232B and the ball socket 233B so that the motor 233-2 is flexibly connected to the lower bell housing 232, and a bottom end of the motor 233-2 may serve as the second end 233D described above.
For example, in the plane shown in fig. 4, if the driver 231 drives the second end 233D of the support member 233 leftward, the gap between the preheating ring 11 and the susceptor 12 increases and the height difference decreases for the portion of the preheating ring 11 and the susceptor 12 on the left side in the drawing, and accordingly, the gap between the preheating ring 11 and the susceptor 12 decreases and the height difference increases for the portion of the preheating ring 11 and the susceptor 12 on the right side in the drawing.
In a preferred embodiment of the present invention, referring to fig. 5 and 6, the driver 231 comprises a first drive motor 231A and a second drive motor 231B, and the second end 233D of the support member 233 is connected to the first drive motor 231A and the second drive motor 231B by a first ram 234 and a second ram 235, respectively, wherein the first ram 234 and the second ram 235 are hinged to the second end 233D of the support member 233 at respective first hinge points 234A, 235A and to the first drive motor 231A and the second drive motor 231B, respectively, at respective second hinge points 234B, 235B, the first drive motor 231A and the second drive motor 231B being configured to drive the first ram 231A and the second drive motor 231B, respectively, in directions perpendicular to each other (as schematically shown by arrows in fig. 5 and 6) in a plane parallel to the base 12 (as shown by dashed lines in fig. 5 and 6) A second hinge point 234B, 235B of the rod 234 and said second top bar 235.
In this way, by driving the second hinge point 234B of the first lift pin 234 and the second hinge point 235B of the second lift pin 235 by the first drive motor 231A and the second drive motor 231B, respectively, in a cooperative manner, it is possible to move the second end 233D of the support member 233 to an arbitrary position in a plane parallel to the susceptor 12, wherein fig. 6 shows an example of the movement of the second end 233D with respect to the position shown in fig. 5, and thereby it is achieved that the susceptor 12 rotates together with the support member 233 about the ball head 232B in an arbitrary direction, eventually achieving an adjustment of the position of the susceptor 12 with respect to the preheating ring 11.
In a preferred embodiment of the invention, referring to fig. 5 and 6, said first ram 234 and/or said second ram 235 are provided with a stop ST, wherein fig. 5 and 6 only exemplarily show that the first ram 234 is provided with a stop ST for limiting the range of movement of said first ram 234 and said second ram 235 when driven by abutting against the opposite ram (as shown in fig. 6), i.e. the second ram 235 opposite to the stop ST in fig. 5 and 6. Damage to nearby components due to large-scale movement of the first lift pin 234 and the second lift pin 235 can thereby be avoided, and accordingly, movement of the base 12 is limited to a certain range, and damage to nearby components due to large-scale movement of the base 12 can be avoided.
In a preferred embodiment of the present invention, the first drive motor 231A and the second drive motor 231B are both stepping motors, and the drive control command is a command to control a stepping angle of the stepping motors.
The stepper motor is adapted to receive drive control instructions sent by the controller 22 and to perform actions in accordance with the received drive control instructions. Specifically, the rotation angle of the stepping motor may correspond to the displacement distance of the second hinge point 234B of the first push rod 234 and the displacement distance of the second hinge point 235B of the second push rod 235, and the controller 22 may send a driving control instruction for rotating the stepping motor by a desired angle according to the above correspondence. It should be noted that, the manner of converting the rotational motion of the motor into the translational motion is known and will not be described herein.
Referring to fig. 7, an embodiment of the present invention also provides a method for automatically adjusting the position of susceptor 12 relative to preheat ring 11 in epitaxial furnace 1, which is applied to system 20 according to the present invention, and which may include:
s601: the laser measuring instrument 21 measures the actually measured relative position information between the susceptor 12 and the preheating ring 11, and transmits the actually measured relative position information to the controller 22;
s602: the controller 22 compares the measured relative position information with reference relative position information when the susceptor 12 is at a reference position with respect to the preheating ring 11 to obtain a deviation between the measured relative position information and the reference relative position information, and in response to the deviation being greater than a set threshold, generates a drive control instruction based on the deviation and sends the drive control instruction to the drive mechanism 23, wherein the drive control instruction is for instructing the drive mechanism 23 to drive the susceptor 12 to move toward the reference position with respect to the preheating ring 11,
s603: the driving mechanism 23 drives the base 12 according to the drive control instruction.
In a preferred embodiment of the present invention, the measuring of the measured relative position information between the susceptor 12 and the preheating ring 11 may include:
measuring a gap value between the susceptor 12 and the preheating ring 11; or
The height difference between the susceptor 12 and the preheating ring 11 was measured.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A system for automatically adjusting the position of a susceptor relative to a preheat ring in an epitaxial furnace, the system comprising: the device comprises a laser measuring instrument, a controller and a driving mechanism; wherein,
the laser measuring instrument is configured to measure actually measured relative position information between the susceptor and the preheating ring and transmit the actually measured relative position information to the controller;
the controller is configured to compare the measured relative position information with reference relative position information when the susceptor is at a reference position relative to the preheating ring to obtain a deviation between the measured relative position information and the reference relative position information, and is configured to generate a drive control instruction based on the deviation and send the drive control instruction to the drive mechanism corresponding to the deviation being greater than a set threshold, wherein the drive control instruction is used for instructing the drive mechanism to drive the susceptor to move towards the reference position relative to the preheating ring;
the driving mechanism is configured to drive the base according to the driving control instruction.
2. The system of claim 1, wherein the measured relative position information is a measured height difference between the susceptor and the preheat ring, and correspondingly, the reference relative position information is a reference height difference between the susceptor and the preheat ring.
3. The system of claim 1, wherein the measured relative position information is a measured gap value between the susceptor and the preheat ring, and correspondingly, the reference relative position information is a reference gap value between the susceptor and the preheat ring.
4. The system of claim 1, wherein the drive mechanism comprises:
a driver fixedly disposed relative to a base of the epitaxial furnace;
a lower bell jar also fixedly arranged relative to a base of the epitaxial furnace, a ball head being formed at a terminal end of the lower bell jar opposite to the base;
a support member for supporting the base, the support member being formed with a ball socket that mates with the ball head;
wherein the driver is configured to drive the support member such that the base can be rotated in any direction about the ball head together with the support member.
5. The system of claim 4, wherein the support member extends through the bulb and has a first end and a second end on either side of the bulb, the base being supported at the first end of the support member, the driver driving the second end of the support member.
6. The system of claim 5, wherein the driver comprises a first drive motor and a second drive motor, and the second end of the support member is connected to the first drive motor and the second drive motor by a first ram and a second ram, respectively, wherein the first ram and the second ram are hinged to the second end of the support member at respective first hinge points and are hinged to the first drive motor and the second drive motor, respectively, at respective second hinge points, the first drive motor and the second drive motor being configured to drive second hinge points of the first ram and the second ram, respectively, in directions perpendicular to each other in a plane parallel to the base.
7. A system according to claim 6, characterised in that the first ram and/or the second ram is/are provided with a stop for limiting the range of movement of the first ram and the second ram when driven by abutment against the opposite ram.
8. The system of claim 6, wherein the first drive motor and the second drive motor are both stepper motors, and the drive control instructions are instructions to control a step angle of the stepper motors.
9. A method for automatically adjusting the position of a susceptor with respect to a preheating ring in an epitaxial furnace, applied to a system according to any one of claims 1 to 8, characterized in that it comprises:
the laser measuring instrument measures actually-measured relative position information between the base and the preheating ring and transmits the actually-measured relative position information to the controller;
the controller compares the measured relative position information with reference relative position information when the susceptor is at a reference position with respect to the preheating ring to obtain a deviation between the measured relative position information and the reference relative position information, and generates a drive control instruction based on the deviation and transmits the drive control instruction to the drive mechanism in response to the deviation being greater than a set threshold, wherein the drive control instruction is for instructing the drive mechanism to drive the susceptor to move toward the reference position with respect to the preheating ring,
and the driving mechanism drives the base according to the driving control instruction.
10. The method of claim 9, wherein said measuring measured relative position information between said susceptor and said preheat ring comprises:
measuring a gap value between the susceptor and the preheating ring; or
Measuring a height difference between the susceptor and the preheat ring.
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| CN114318525A (en) * | 2021-12-23 | 2022-04-12 | 北京北方华创微电子装备有限公司 | Semiconductor epitaxial equipment and method for adjusting coaxiality of base and preheating ring of semiconductor epitaxial equipment |
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