CN104488096A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
CN104488096A
CN104488096A CN201380037392.2A CN201380037392A CN104488096A CN 104488096 A CN104488096 A CN 104488096A CN 201380037392 A CN201380037392 A CN 201380037392A CN 104488096 A CN104488096 A CN 104488096A
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CN
China
Prior art keywords
light
emitting device
seal member
storing material
covering part
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Granted
Application number
CN201380037392.2A
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Chinese (zh)
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CN104488096B (en
Inventor
田村刚
正瑞浩章
藤川康夫
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Nichia Corp
Nichia Chemical Industries Ltd
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Nichia Chemical Industries Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The purpose of the present invention is to provide a light-emitting device wherein it is possible to improve light-extraction efficiency and to equalize the light extracted from a luminous material when the light-emitting device is off. A light-emitting device provided with: a substrate (10) having a base (11), multiple wiring parts (12) disposed on one surface of the base (11), and a covering part (15) which covers the wiring parts (12) and of which a portion has an opening that exposes the wiring parts (12); multiple light-emitting elements (30) electrically connected to the wiring parts (12) that are exposed from the covering part (15); and a sealing member (20) which seals each light-emitting element (30). At least a portion of the covering part (15) contains a luminous material (15a).

Description

Light-emitting device
Technical field
The present invention relates to light-emitting device, in more detail, relate to the light-emitting device possessing the light-storing material with residual light characteristic.
Background technology
At present, in order to obtain residual light when light source is closed, the light-storing material with residual light characteristic is used in the light source using light-emitting component.
Such as, propose to have to be configured with reflection part in the mode of being surrounded by the light-emitting component be configured on substrate, have the light-emitting device of light-storing material in the surface configuration of this reflection part.In this light-emitting device, the surface of reflection part is configured with the position of light-storing material by arranging and is not configured with the position of light-storing material, the minimizing (such as, Japanese Unexamined Patent Publication 2007-234632 publication) of light reflection when suppressing light-emitting device to be connected.
But, have in the light-emitting device of light storage part part in a part of surface configuration of reflection part of surrounding each light-emitting component, when combine multiple and the light-emitting device of more high brightness will be obtained, in each light-emitting device, have restriction to the luminous intensity distribution of reflection part, the brightness stored in light becomes uneven.In addition, in this light-emitting device, in reflection part, containing fluorophor in the transparent member of covering luminous element, so when light-emitting device is closed, configured fluorophor by the injection path of light of saving, a part for its light is absorbed by fluorophor, another part, by fluorophor scattering, therefore exists and the light from light-storing material can not be taken out such problem fully.
Summary of the invention
The present invention sets up in view of above-mentioned problem, and its object is to provides a kind of when light-emitting device is closed, and can eliminate the uneven luminance of the light taken out from light-storing material, even if light is even, and improve the light-emitting device of the extraction efficiency of light.
The present invention comprises following aspect.
Light-emitting device of the present invention possesses: substrate, it has matrix, be located at multiple wiring parts of the one side of described matrix, cover this wiring part and have the covering part of the opening that described wiring part is exposed in its part, multiple light-emitting component, it is electrically connected with the described wiring part exposed from described covering part; Seal member, it incites somebody to action respectively this encapsulating luminescent element, and described covering part is comprising light-storing material few in its part.
According to the present invention, can provide a kind of when light-emitting device is closed, the uneven luminance of the light taken out from light-storing material can be eliminated, and improve the light-emitting device of the extraction efficiency of light.
Accompanying drawing explanation
Figure 1A is the schematic plan view of the execution mode representing light-emitting device of the present invention;
Figure 1B is the schematic cross-sectional view of the light-emitting device of Figure 1A;
Fig. 2 is the schematic cross-sectional view of another execution mode representing light-emitting device of the present invention;
Fig. 3 is the schematic cross-sectional view of the another execution mode representing light-emitting device of the present invention;
Fig. 4 A is the schematic plan view of the execution mode again representing light-emitting device of the present invention;
Fig. 4 B is the schematic cross-sectional view of an execution mode again of the light-emitting device representing Fig. 4 A;
Fig. 5 is the schematic plan view of other execution modes representing light-emitting device of the present invention.
Description of symbols
100,200,300,400,500: light-emitting device
10: substrate
11: matrix
12,13: wiring part
14: groove portion
15,25: covering part
15a: light-storing material
15c: resin bed
15d, 25d, 35d: light-storing material layer
20: seal member
20a, 20b: fluorophor
30: light-emitting component
35: attachment
40: resin bed
Embodiment
Light-emitting device of the present invention mainly possesses substrate, light-emitting component, seal member.
(substrate)
Substrate at least possesses matrix, the multiple wiring parts be located in the one side of this matrix, the covering part be located on wiring part.
Matrix is the parts of the parent as light-emitting device, can according to object or purposes etc., and considers the installation of light-emitting component, light reflectivity, close fitting etc. with other parts, uses suitable material to be formed.As this material, such as, pottery (Al can be enumerated 2o 3, AlN etc.), insulating properties or the conductive material such as expoxy glass, plastics, metallic plate or metal forming.Specifically, the resin such as preferred PETG, polyimides.When particularly using solder in the installation of light-emitting component, more preferably use the polyimides that thermal endurance is high.In addition, formed in the material of matrix and also can comprise the high material of light reflectivity white fillers etc. such as () such as titanium oxide.
The thickness of matrix is not particularly limited, such as, can be set to the thickness of 10 μm ~ number mm degree.Matrix both can be rigid substrates, also can be to have flexible substrate, but preferably had flexibility, in this case, can enumerate 10 μm ~ 100 μm degree.
Matrix can be set to suitable shape (size, length) according to object or purposes etc.Matrix specifies in fact the shape of substrate, the shape etc. that its shape such as can be enumerated quadrangle, rectangle, polygon, circle, ellipse and they be combined.When light-emitting device of the present invention is used in the fluorescent lamp etc. of straight tube, be preferably formed to the elongated shape extended in the longitudinal direction.Such as, the length of length direction and the length ratio of Width can enumerate 5: 1 ~ 50: 1 degree, more preferably 10: 1 ~ 30: 1 degree, 10: 1 ~ 20: 1 degree.Distortion such as the flexible or warpage of flexible matrix and using, so the structure that can use several mm ~ number cm degree larger than the width of straight pipe type illumination, length.Specifically, when the illumination of straight pipe type being set to about 120cm, the matrix etc. of width 0.5cm ~ 5cm, length 30cm ~ 120cm can be adopted.
In addition, the matrix (substrate) of multiple this elongated shape can merge by flexible matrix, is manufactured by volume to volume mode.In this situation, matrix also can have sprocket hole.
Multiple wiring part is formed as conductive component, is configured in the one side of matrix, is directly or indirectly connected with light-emitting component.Wiring part such as can be formed by the individual layers of metal or alloy such as gold, silver, copper and aluminium or the conductive membrane of lit-par-lit structure.Wiring part is not only configured in the one side of matrix, and can according to the Specific disposition of substrate at the inside of substrate or another side.
The thickness of wiring part is not particularly limited, the thickness of the wiring part that applicable normally used substrate in the art possesses.Such as can enumerate several μm ~ number mm degree.Particularly, as mentioned above, when using the matrix with flexibility, wiring part does not preferably damage the thickness of its flexibility, such as, can enumerate 8 μm ~ 150 μm degree.
The shape (pattern) of multiple wiring part is not particularly limited, usually can enumerate identical with the shape of the distribution in substrate of element mounted etc. or pattern or follow the shape etc. of this shape, being preferably set to the shape etc. further contemplating thermal diffusivity and/or intensity etc.Such as can to enumerate in the acerous shape such as the polygons such as crank shape, triangle, quadrangle, circle, ellipse, these shapes the shape that is a kind of or that their combined of the partly irregular shape of tool etc.In addition, the bight of wiring part is preferably with radian.
Multiple wiring part configures in separated mode.Positive and negative a pair and form of this wiring part, quantity that form positive and negative a pair wiring part, that contribute to the respective wiring part conducted electricity is not particularly limited.Such as, a pair wiring part also can be only made up of a wiring part separately, also can be made up of multiple wiring part.
Wiring part by configuring to combine the wiring part with various shape than larger area, thus can improve the configuration degree of freedom of light-emitting device.Such as under matrix is rectangular situation, be connected in parallel at the arrangement of length direction three three ground, six light-emitting components arranging by twos at Width as a block, by positive and negative a pair wiring part, arrange at length direction 12 blocks can be connected in series.In addition, matrix is roughly square, circular or elliptical shape, also can be the shape be connected with common positive and negative each wiring part by a light-emitting component.
In addition, beyond these wiring parts (that is, contributing to conductive wires portion) of being electrically connected directly or indirectly with light-emitting component, also can configure identical or different shape etc. and be helpless to the wiring part that is energized.This wiring part being helpless to be energized can play a role as the mounting portion of thermal component or light-emitting component.Such as when matrix is the elongated shape extended along its length, this wiring part being helpless to be energized preferably extends to the end of length direction and is configured at the both sides of wiring part at Width.In addition, wiring part preferred disposition can to the terminal of wiring part supply power.Thereby, it is possible to power from external power source to light-emitting component.
This wiring part, when roughly overall (preferably the configuration continuously) that one be partly arranged at flexible substrate, can alleviate the mechanical load to light-emitting component during curved substrate etc. and seal member described later.Specifically, wiring part, on the matrix of the elongated shape extended along its length, preferably configures in the prolongation of its length direction longlyer, more preferably configures with the length of 1/3 ~ 1 of length direction times.
As mentioned above, multiple wiring part, in surperficial each self-separation of matrix, therefore, in order to this separation, has the groove portion (that is, matrix expose part) not being provided with wiring part.Due to groove, portion is configured between wiring part, so its shape is corresponding with the shape of wiring part, such as, can enumerate crank shape.The width in groove portion is preferably narrow than the width of wiring part, and in other words, preferred wiring part is arranged with wider area, such as, can be set to 0.05mm ~ 5mm degree.
By arranging wiring part (including the wiring part both sides helping/be helpless to conduct electricity) with area wide as far as possible in the one side of matrix, thermal diffusivity can be improved.
In addition, use when there is flexible matrix, wiring part at matrix one on the surface, whole configures with larger area, while keep it flexible, and suitable intensity can be applied, the broken string of the wiring part effectively preventing the warpage of flexible substrate from causing, the fracture etc. of substrate self.Specifically, preferably relative to the area of matrix, with more than 50%, more preferably more than 70%, preferably the area of more than 80%, more than 85% or more than 90% arranges wiring part further.In addition, when needing wiring part electrically separated, preferably with the area configuration below 98% degree or below 95% degree, can guarantee that it is electrically separated.
The parts that the reflectance coating that the covering part covering wiring part preferably can be used as the light of self-emission device injection plays a role.This covering part as described later, has the opening that wiring part is exposed in its part, except this opening, and the substantially entire surface on the surface of preferred covered substrate.In addition, the groove portion of above-mentioned wiring closet is preferably also covered.
In order to be connected by the wiring part of light-emitting component with positive and negative a pair, opening is arranged in the mode making wiring part expose.Shape and the size of opening are not particularly limited, and preferably can carry out the minimal size of light-emitting component to the electrical connection of wiring part.
The quantity of the opening on a substrate is not particularly limited, such as, can determine according to the reasonable quantity of the light-emitting component that a substrate carries.
Usually, according to as the quantity of the light-emitting component needed for the adjustment such as the output of light-emitting device and luminous intensity distribution and configuration, quantity and the position of opening is determined thus.Opening also can be identical with the quantity of the light-emitting component of lift-launch, also can be different.Such as when lift-launch 20 light-emitting components situation and in an opening load a light-emitting component, configure 20 openings in covering part.Or, when an opening loads plural light-emitting component, configure the opening of less than 10.
Difference according to circumstances, also can load light-emitting component in opening.Such as dividing several grade (such as by light-emitting device, export different light-emitting devices) when making, identical substrate can be used (namely, be located at the quantity of the opening of covering part and configure identical substrate), make output different by changing the quantity of the light-emitting component carried in opening.In this situation, produce the opening not being equipped with light-emitting component.In addition, the region (opening) of covering part can be there is no at the above-mentioned terminal of configuration etc. for the region formation of the parts that be energizeds to light-emitting component etc. yet.
In addition, when carrying out flip-chip and installing, a part for groove is preferably made to expose in an opening.
Covering part at least comprises light-storing material in its part.In addition, the material of the injection light of covering part preferably containing Refl-Luminous element and the light by the wavelength after wavelength convert parts conversion described later, or formed by this material.
As this material, such as, can enumerate the resin of phenolic resins, epoxy resin, acrylic resin, BT resin, PPA, silicone resin, urea resin etc.
Covering part can be any one of individual layer or lit-par-lit structure.Particularly, when covering part is monolayer constructions will, preferably contains equably in covering part entirety or be dispersed with light-storing material.
When covering part is lit-par-lit structure, be preferably configured with the layer comprising light-storing material in the most surface of lit-par-lit structure.In addition, preferably from most surface side, stack gradually the layer, the then stacked layer (there is the layer of light reflective) that improve reflectivity by filling filler etc. that comprise light-storing material.The light from light-storing material can be suppressed thus to be absorbed by wiring part, improve light extraction efficiency.The layer comprising light-storing material in this most surface can configure throughout whole of covering part, also can configure according to the mode partly being formed protuberance in various modes such as chinampa shape, striated, clathrates on the surface of covering part.That is, the plan view shape of protuberance is that any shapes such as the polygon such as triangle, quadrangle, circle, ellipse can.
Light-storing material also can be at the known material in this field, such as: any one of sulfide-based fluorescent material, aluminate class fluorescent material, oxysulfide class fluorescent material etc.Specifically, the material etc. that No. 2005-330459, Japanese Unexamined Patent Publication is recorded can be enumerated.These materials can be used alone, and also can be used in combination of two or more.Wherein, aluminate class fluorescent material particularly preferably Sr 4al 16o 25: Eu, Dy (SAE).
Such as, the light-storing material preferably containing 5 ~ 60wt% in the material forming covering part.
In addition, covering part such as also can contain SiO 2, TiO 2, Al 2o 3, ZrO 2, the filler such as MgO.
Covering part such as can mix light-storing material in above-mentioned resin, is printed on wiring part with screen process press etc., and carrying out is heating and curing makes its set.Or, also the process of resin being mixed with light-storing material can be become sheet, be pasted onto on wiring part via bonding agent.Sheet material can pass through the method well known in the art such as extrusion molding, injection mo(u)lding, compression forming and be formed.
In addition, when for lit-par-lit structure, can be formed by the following method, that is, after the film forming above-mentioned resin formation, apply the method for the solution containing light-storing material or polymer solution etc. thereon; Above-mentioned resin and the polymer solution containing light-storing material are carried out the method for coextrusion etc.; On the film that above-mentioned resin is formed, applied the method for the polymer solution containing light-storing material etc. by print process comprehensively or partly; Paste the method etc. of the resin containing light-storing material of the shape (such as sheet) after processing.
Covering part is preferably arranged with thinner thickness, particularly, preferably configures according to the mode being positioned at the position higher than covering part above of light-emitting component.Specifically, no matter the thickness of covering part is individual layer or lit-par-lit structure, can enumerate 0.01mm ~ 0.1mm degree.
The substrate of such formation preferably has flexibility.Thereby, it is possible to for various uses, directly utilize in the mode being equipped with light-emitting component or shape be suitably out of shape and utilize.The gross thickness of substrate can adjust according to the thickness of above-mentioned each component parts, such as, can be set to 0.05 ~ 0.15mm degree, preferably be set to 0.07 ~ 0.12mm degree.
In addition, when light-storing material is partly configured in covering part, store optical efficiency to improve further, preferably according to light-storing material only configuring light-storing material in the mode existed more on the lower than (the top or point) above seal member described later than the mode that exists more top light-emitting component above.Thus, the light carrying out self-emission device can be radiated on light-storing material effectively, and light-storing material can be avoided to absorb the light loss caused from the light of fluorophor.
(light-emitting component)
Light-emitting component is electrically connected with the wiring part exposed from covering part, substrate is configured with multiple.Particularly, in the opening of the above-mentioned covering part on substrate, configure preferred over two wiring parts or be configured on a wiring part.By such configuration, light-emitting component easily can be electrically connected with positive and negative a pair wiring part.
Multiple light-emitting component is according to making to determine its number and/or tone and/or configuration as the mode of the output needed for light-emitting device and luminous intensity distribution abundance.Therefore, accordingly, the shape of the peristome of wiring part and/or covering part etc. and position etc. are adjusted as described above, at this mounting light-emitting component.
Light-emitting component has semiconductor construction, p-side electrode, n-side electrode.
N-layer, active layer and the p-type layer etc. of semiconductor construction such as by being made up of the gallium nitride based semiconductor stacked gradually on the sapphire substrate with light transmission are formed.But, be not limited to gallium nitride based semiconductor, also can use II-IV race, III-V race semiconductor any one.
N-side electrode and p-side electrode can be formed by the monofilm of known electrode material or stacked film.
Light-emitting component can be arranged on substrate by flip-chip, and also can face up is arranged on substrate.
When being installed by flip-chip, the p-side electrode of light-emitting component and n-side electrode are connected with a pair wiring part respectively via pair of engaging parts.As attachment, the projection etc. of the metals such as solder, Au such as Sn-Ag-Cu class, Sn-Cu class, Au-Sn class can be used.
When faced up according to, light-emitting component is fixed on (on wiring part) on matrix by the attachment of the insulating properties attachment such as resin, above-mentioned conductivity, is electrically connected with wiring part by electric wire.When the substrate of light-emitting component is the substrate of conductivity, be electrically connected by above-mentioned attachment.
In light-emitting device of the present invention, because light-emitting component is to configure with the mode that the wiring part of substrate is directly electrically connected, so can make to irradiate to the light-storing material of the covering part forming substrate from the light of the wide luminous intensity distribution of seal member described later.Thus, no matter light-storing material is configured in which position of covering part, the residual light that uneven luminance is few can both be obtained.In addition, due to light-storing material and wiring part can be made close to configuring, therefore heat conduction is good, can suppress the deterioration of light-storing material.
On a surface of substrate, not only configure light-emitting component, but also the protection components such as Zener diode or correlated parts (terminal, fuse, resistance etc. that such as, above-mentioned outside connects) can be configured.This protection component and correlated parts together can be configured in light-emitting component and be placed with in the opening of light-emitting component, also can arrange opening in addition, are configured in this opening.But, be preferably configured in the position of the light not absorbing self-emission device.Such as, the wiring part connected at multiple light emitting elements in series loads a protection component, now, the arbitrary position such as to be preferably independently placed near terminal with the configuration of light-emitting component.
(seal member)
Light-emitting component seals respectively (covering) by seal member on substrate.A light-emitting component is preferably covered by a seal member, but also plural light-emitting component can be sealed by a seal member.Seal member preferably has light transmission to the light carrying out self-emission device, and has light resistance and insulating properties.Sealing parts can configure according to the mode of the whole opening covering above-mentioned covering part, also can configure according to the unlapped mode of a part of opening.Refer to the character more than through 60% degree of the injection light of light-emitting component in this light transmission, preferably through more than 70% or more than 80% the character of light.
Seal member specifically by silicone resin, epoxy resin, urea resin, the fluororesin such as silicone resin component, modified silicone resin combination, composition epoxy resin, modified epoxy resin composition, acrylic acid resin composition and comprise these resins at least one more than the resin such as hybrid resin and formed.
Seal member preferably contains the light the fluorophor equiwavelength converting member converting the light of different wave length to that absorb self-emission device injection.As this wavelength convert parts, oxide-based, sulfide-based, nitride-based fluorophor etc. can be enumerated.Such as when using the gallium nitrate kind light-emitting component of coloured light of turning blue as light-emitting component, be preferably used alone absorb YAG class that blue light and look ~ green of turning to be yellow are light, LAG class, the SiAlON class of glow green, SCASN, CASN class of burn red fluorophor or they are combinationally used.Particularly, in the light-emitting device of the display unit such as the backlight for liquid crystal display, TV, preferred compositions uses SiAlON class fluorophor and SCASN fluorophor.In addition, as lighting use, preferred compositions uses fluorophor and SCASN or the CASN fluorophor of YAG class or LAG class.
Wherein, compare above-mentioned light-storing material, the preferred luminescence peak of fluorophor is the material of long wavelength.Such as, above-mentioned aluminate class fluorescent material, particularly Sr is used 4al 16o 25: when Eu, Dy (SAE) are as light-storing material, preferably use by the excitation at least partially of the light from this SAE and send at least one of visibility than the fluorophor from the high light of the light of SAE.
At this, visibility is also referred to as light splitting visual effect degree, represent that human eye is felt to each wavelength to be the index of degree of intensity of light that the light of the wavelength 555nm felt the most by force by human eye is set to 1, to use ratio to show the index of the degree of the lightness feeling another wavelength.Be called that by the visibility equalization of many people and through the value of CIE (Commission Internationale De L'Eclairage) desirable decision standard is than visibility (than visibility), what refer in this manual is exactly this value.In addition, have that daylight is visible and dark place is visible in visibility, but in this manual, refer to the sensation of human eye under a bright ambient environment, namely visibility is compared in daylight.What is called " visibility compares from the high light of the light of SAE " refers to the light of the wavelength band (about 495 ~ about 635nm) of the visibility becoming higher than the visibility (about 0.25) of the peak luminous wavelength (near 495nm) of SAE.Therefore, the light of the visibility yellow ~ red area higher than the glow peak wavelength of SAE can be enumerated.As the fluorophor sending out light this, such as, can enumerate YAG class, CASN class or their combination.
Thereby, it is possible to improve the launching efficiency of fluorophor, obtain good look of on average drilling and evaluate number Ra.Evaluate number Ra and refer at this look of on average drilling the value represented by table 2004/081140 publication again, good Ra refers to the value of 75 ~ 95 degree.
Namely, light-storing material is there is not at the opening of covering part, so when light-emitting device is closed, the fluorophor existed near opening in seal member is energized by the light sent from SAE, be converted to the light that visibility is higher than SAE, therefore when light-emitting device is closed, be not configured with the opening of light-storing material, from the irradiation (residual light) of the light of light-storing material and can significantly and feel light (residual light) in wider scope from being complemented each other by the light of the fluorophor of this light stimulus.
In addition, the fluorophor in seal member preferably can penetrate the material of the light of yellow area.Thus, when using SAE as light-storing material, the light of SAE can be converted to the high light of visibility, make human eye further feel residual light.That is, by using the material that can penetrate the light of yellow area as fluorophor, even if when the auroral poles carrying out self-emission device is absorbed by SAE less, also can fill up or adding the amount absorbed.
Seal member also can contain light-scattering material (barium sulfate, titanium oxide, aluminium oxide, silica etc.).
In addition, seal member is not preferably containing light-storing material.Thus, between the fluorophor in light-emitting component and seal member, do not configure light-storing material, so can make the whole of the light of self-emission device to be irradiated to fluorophor.In addition, the light of self-emission device can be avoided to irradiate to light-storing material and absorbed.Its result, can improve launching efficiency further.Specifically, when the light of light-emitting component injection blue region, this light converts the light in dark green region to by light-storing material (such as SAE), and then, if this convert light injects on fluorophor, the launching efficiency of fluorophor will reduce, but reliably can avoid the reduction of the launching efficiency of this fluorophor.
The shape of seal member is not particularly limited, but considers luminous intensity distribution and the directive property of the light of self-emission device injection, is preferably set to concavees lens or convex lens.Wherein, the convex lens of most preferably semi-spherical shape.
The size of seal member is not particularly limited, and can consider the suitably adjustment such as the brightness of light-emitting device, directive property.Particularly, seal member is preferably set to the size of the contact area can guaranteeing itself and resin bed larger.When using flexible substrate as substrate, preferably do not damage the size of the degree of the flexibility of flexible substrate.Such as more preferably can cover more than the size of whole light-emitting component, and below the diameter of two times of degree of an edge lengths of light-emitting component or length.Specifically, (diameter) can be enumerated for 1mm ~ 4mm degree.
The outer rim of seal member both can be configured in covering part, also can be configured in the opening of covering part.When the outer rim of seal member is configured in covering part, the light-storing material contained in above-mentioned covering part also can disperse from the below of seal member to the outside of seal member, also can on the surface of covering part, the protuberance comprising light-storing material is configured between seal member.In addition, in the opening that seal member is configured at covering part, preferably its outer rim contacts with the edge of opening of covering part (fitting tightly).That is, preferably on the surface of light-emitting device, fluorophor and light-storing material is configured incessantly.Thus, the uneven luminance of residual light also can be reduced when light-emitting device is closed.
As long as seal member covering luminous element, also directly can not contact with light-emitting component, also cavity can be had between itself and light-emitting component, also can contact with light-emitting component above light-emitting component, but directly need not contact with the covering part and wiring layer forming substrate in the periphery of light-emitting component, but configure via resin bed described later.
(resin bed)
Preferably around light-emitting component, be configured with resin bed.Particularly, in the opening that light-emitting component is configured in covering part, preferably around light-emitting component, be configured with resin bed in the mode covering the wiring layer exposed.If be configured in the opening that arranges in covering part, then also can be configured in periphery, the i.e. covering part of the opening of covering part always, no matter with or without wiring part, such as, can be configured in immediately below groove portion between wiring part and/or light-emitting component.
Resin bed preferably connects with the outer rim (side) of light-emitting component.Usually, light-emitting component uses attachment etc. to carry out to the lift-launch on substrate, but the material forming resin bed is compared on the part surface (such as wiring part etc.) etc. of these attachment and/or matrix, usually more easily produces the deterioration that photoconduction causes.Therefore, preferably near light-emitting component, be configured by the mode that resin bed covers with the part surface etc. of these attachment and/or matrix.Thus, the stronger light that self-emission device is penetrated not to the direct irradiation such as attachment and/or matrix, therefore, it is possible to effectively prevent form light-emitting device parts light deterioration.
The end of the light-emitting component opposition side of resin bed can in the outer rim of above-mentioned seal member, also can be consistent with outer rim, can also outside outer rim.Particularly, when resin bed is configured at outside outer rim, owing to easily guaranteeing the contact area of resin bed and sealing, can make seal member more firmly with light-emitting device particularly resin bed be adjacent to.
In other words, area of plane when namely the size of resin bed observes light-emitting device from light removing direction, can be equal relative to the area of plane of the sealing resin except the area of plane of light-emitting component, also can be greater or lesser.1/5 ~ 3 times of degree of the area of plane of the sealing resin especially except the area of plane of light-emitting component, preferably 1/4 ~ 3 times of degree, more preferably 1/3 ~ 1.5 times.Like this, if the area of plane of configuration resin bed is comparatively large, then as aftermentioned, increases with the contact area of seal member, fitting tightly therefore by both, the close fitting more firm of the seal member of light-emitting device can be made.
Resin bed such as can be configured with the thickness in the scope of several μm ~ hundreds of μm of degree.Particularly, the part contacted with light-emitting component is preferably below the thickness suitable with the height of the side of light-emitting component.When resin bed is configured in whole opening, the part preferably contacted with the outer rim of opening is below the thickness suitable with the degree of depth of opening.Particularly, the thickness that reduces towards (outside relative to the center of light-emitting component) outside it of preferred self-emission device.
Resin bed such as can by being formed as the resin of matrix polymer containing silicone resin component, modified silicone resin combination, composition epoxy resin, modified epoxy resin composition, acrylic acid resin composition etc., silicone resin, epoxy resin, urea resin, fluororesin and the hybrid resin etc. that comprises more than one these resins.Wherein, preferably containing the resin as matrix polymer such as silicone resin, epoxy resin.At this, so-called matrix polymer refers in the material forming resin bed, containing the resin that weight is maximum.In addition, resin bed is such as preferably containing SiO 2, TiO 2, Al 2o 3, ZrO 2, reflecting material and/or the diffusion material such as MgO.Thereby, it is possible to reverberation efficiently.
The material forming resin bed can be used alone or be used in combination of two or more.Thereby, it is possible to adjustment light reflectance, in addition, the coefficient of linear expansion of adjustable resin is gone back.
In addition, the material forming resin bed preferably comprises the material forming seal member, particularly, more preferably comprises the resin same with the resin-phase forming seal member, preferably comprises the matrix polymer of formation seal member further as matrix polymer.Thereby, it is possible to guarantee the close fitting of seal member further.
In light-emitting device of the present invention, when connecting, roughly all penetrating to seal member of the light that self-emission device penetrates, particularly, in seal member containing fluorophor, the light of self-emission device injection irradiates to fluorophor, thus can activating fluorescent body effectively, avoids light-storing material to the absorption of light.When closing, about the residual light sent from light-storing material, owing to the path contacted with fluorophor in seal member can be suppressed in Min., therefore, the absorption that residual light can be suppressed to cause because of fluorophor or inclosure, can improve the intensity of residual light.
Below, be described based on the embodiment of accompanying drawing to light-emitting device of the present invention.
(execution mode 1)
As illustrated in figures ia and ib, the light-emitting device 100 of this execution mode 1 has: substrate 10, be configured at the light-emitting component 30, on the substrate 10 and the seal member 20 of covering luminous element 30 on the surface of substrate 10.
Substrate 10 be formed by lit-par-lit structure be made up of polyimides (thickness 25 μm of degree) there is flexible matrix 11, be arranged at its one side via bonding agent and the multiple wiring parts 12 (Copper Foil, thickness 35 μm of degree) be separated by groove portion 14 and the covering part 15 with the individual layer of insulating properties covered thereon.
Covering part 15 is in the silicone resin containing titanium oxide, and the SAE containing 10wt% degree as light-storing material 15a, and is formed membranaceous with thickness 15 μm of degree.
In wiring part 12, throughout the roughly overall of length direction, wiring part 13 that is that extend is connected with the terminal 131 can powered to wiring part 12.
Substrate 10 has the size of 1141mm (length) × 15mm (width) × 0.09mm (thickness).
Substrate 10 makes the groove portion 14 between wiring part 12 in order to be electrically connected with light-emitting component 30 in one subregion, wiring part 12 is exposed from covering part 15 by opening.
Wiring part 12 has crank shape, and groove width is set to 0.3mm degree.
Light-emitting component 30 has semiconductor construction, p-side electrode, n-side electrode (not shown).Semiconductor construction is in a part of region, and removing p-type semiconductor layer and luminescent layer and n-type semiconductor layer is exposed, be formed with n-side electrode in its exposed surface.P-side electrode is formed on p-type semiconductor layer.Therefore, n-side electrode and p-side electrode are formed in the same face side relative to semiconductor construction.
Such light-emitting component 30 make to be configured with n-side electrode and p-side electrode facing under, a pair wiring part 12 exposed by attachment 35 and the covering part 15 from substrate 10 is electrically connected.
Light-emitting component 30 altogether six linearly to configure at equal intervals.
Resin bed 40 is configured with being configured with around light-emitting component 30 region of substrate 10 surface.Resin bed 40 is such as formed by the silicone resin containing titanium oxide 30wt% degree.The outer rim of this resin bed 40 self-emission device 30 and attachment 35 rise, be configured in light-emitting component periphery and in the opening of covering part 15.The thickness of resin bed 40 is the thickness roughly the same with the height of light-emitting component 30 in light-emitting component 30 side, thinning gradually on attachment 35, is becoming the thickness equal with covering part 15 with on the contact-making surface of covering part 15.
Like this, resin bed 40 configures with larger area in the periphery of light-emitting component 30, so seal member 20 and resin bed 40 can be made with larger contact area.Its result, can make seal member 20 fit tightly securely relative to substrate 10.In addition, resin bed 40 is compared with attachment 35, wiring part 12, and reflectivity is high, so the light that more effectively can carry out self-emission device takes out.
On the substrate 10 being equipped with light-emitting component 30, namely at light-emitting component 30, be configured at resin bed 40 around it, immediately below this resin bed 40, be configured at the covering part 15 in the outside of light-emitting component 30 be formed with seal member 20.Seal member 20 such as amounts to 10wt% degree silicone resin by containing LAG and SCASN as fluorophor 20a and 20b is formed.That is, seal member 20 comprises the polymer of the same race with the polymer forming resin bed.
The outer rim a of seal member 20 is configured in the covering part 15 of substrate 10.It is spherical that seal member 20 is shaped to semicircle by cast encapsulation etc.The diameter of seal member 20 is such as 3.5mm degree.
Seal member 20 configures, so can guarantee the close fitting of the two containing the matrix polymer identical with resin bed 40.Particularly, in this light-emitting device 100, in the whole surface of resin bed 40 and the whole side being configured at the part in covering part 15, resin bed 40 contacts with seal member 20, so the contact area of the two can be guaranteed further, in addition, owing to configuring containing identical matrix polymer, and both matchings, amalgamation and intermiscibility are good, so can become close fitting more firmly device.
In addition, the interface of the surface of attachment 35 and wiring part 12 and interface thereof, wiring part 12 and reflectance coating 15 can be covered by resin bed 40, so the stripping etc. that effectively can prevent the deterioration of the light at these positions, cause because light deterioration.
In light-emitting device of the present invention, when connecting, the light of self-emission device injection penetrates to seal member, so the fluorophor that this light can be made effectively to contain in seal member irradiates.Thereby, it is possible to activating fluorescent body effectively, roughly avoid light-storing material to the absorption of light.
In addition, in light-emitting device of the present invention, light-emitting component is to configure with the mode that the wiring part of substrate is directly electrically connected, so effectively can irradiate the light of wide luminous intensity distribution to the light-storing material of covering part from seal member, effectively encourage light-storing material, can complement each other with the excitation of the fluorophor in seal member and improve color rendering, and can light be laid in.
And then, because light-storing material and wiring part are close to configuring, so the heat conduction that period is penetrated in illumination is good, the deterioration of light-storing material can be suppressed.
When closing, the path that the residual light sent from light-storing material contacts with the fluorophor in seal member can be suppressed in Min., namely, what the outer rim of seal member was configured in covering part is configured with in little part at the position of light-storing material, so by fluorophor to the absorption of residual light or close into suppression in Min., the intensity of residual light can be improved.In addition, configure light-storing material incessantly by the surface at light-emitting device, uniform residual light on the whole can be obtained with the luminous intensity distribution of more wide area.
In addition, owing to being configured with light-storing material in reflexive covering part 15, so the light that light-storing material sends effectively can be taken out.
In addition, fluorophor in seal member is the LAG class absorbing blue light and the look that turns to be yellow ~ green class light, therefore, it is possible to the light of the SAE as luminescent material is converted to the high light of visibility, human eye is made to feel residual light further, even if when the light carrying out self-emission device is absorbed by SAE, also can fill up or add the light quantity that it absorbs.
In addition, owing to not containing light-storing material in seal member, so can make the light of self-emission device all to irradiate to fluorophor, can avoid the light of self-emission device irradiate to light-storing material and absorbed, so launching efficiency can be improved further.
(execution mode 2)
The light-emitting device 200 of this execution mode 2 such as shown in Figure 2, the outer rim of seal member 20 is consistent with the edge of the opening of the covering part 15 of substrate 10, therefore, luminous storage material 15a in covering part 15 and fluorophor 20a and 20b in seal member 20 configures incessantly, in addition, with light-emitting device 100, there is in fact identical formation.
In this light-emitting device 200, also there is the effect same with the light-emitting device 100 of execution mode 1.Particularly, when connecting, the light of self-emission device injection, all to seal member injection, does not shine directly into light-storing material, so light-storing material can be avoided the absorption of light, and can more effectively activating fluorescent body.
(execution mode 3)
Such as shown in Figure 3, covering part is by by containing TiO for the light-emitting device 300 of this execution mode 3 2the lit-par-lit structure of light-storing material layer 15d (thickness 15 μm) that is made up of the silicone resin of the light-storing material 15a containing 10wt% of the upper lamination of resin bed 15c (thickness 15 μm) that forms of silicone resin and outside being formed, with light-emitting device 200, there is in fact identical formation.
In this light-emitting device 300, also there is the effect same with the light-emitting device 200 of execution mode 2.Particularly, in covering part, because light-storing material only concentrates on light-struck surface, therefore, it is possible to more effectively play above-mentioned effect.In addition, owing to being configured with light-storing material on the resin bed 15c with light reflective, so the light that light-storing material sends can be effectively utilized.
(execution mode 4)
The light-emitting device 400 of this execution mode 4 is such as shown in Fig. 4 A and B, covering part 25 is formed by applying the light-storing material layer 25d of the polymer solution be made up of the silicone resin of the light-storing material 15a containing 10wt% and the convex formed by partly printing on the sheet material that is made up of polyimides and this sheet material and between seal member 20, in addition, with light-emitting device 400, there is in fact identical formation.
In this light-emitting device 400, also can play effect similar to the above.
In addition, the light-storing material layer forming a part for covering part 25 not only can be formed by carrying out printing coating, but also can wait formation by cast encapsulation.
Like this, the configuration of the light-storing material layer of part can expand the degree of freedom of design, reduces manufacturing cost.
In addition, by light-storing material layer 25d is set to convex form, and its top point is set to than top above light-emitting component, the luminous intensity distribution of the light sent from light-storing material can be expanded.
(execution mode 5)
The light-emitting device 500 of this execution mode 5 such as shown in Figure 5, covering part forms (light-storing material layer 35d is secured on sheet material) by the light-storing material layer 35d of sheet that the sheet material that is made up of polyimides and on this sheet material and beyond the outer region of seal member 20 whole are consisted of the silicone resin of the light-storing material 15a containing 10wt%, in addition, with light-emitting device 400, there is in fact identical formation.
In this light-emitting device 500, also can play effect similar to the above.
In addition, light-storing material layer not only can be formed by the stickup of sheet material, also can by formation such as printings.
Utilizability in industry
Light-emitting device of the present invention can be used in the various light source such as backlight light source, transducer light source, semaphore, vehicle-mounted part, billboard channel letter of illumination light source, various indicator light light source, vehicle-mounted light source, display light source, liquid crystal.

Claims (9)

1. a light-emitting device, is characterized in that, possesses:
Substrate, it has matrix, be located at multiple wiring parts of the one side of described matrix, cover this wiring part and have the covering part of the opening that described wiring part is exposed in its part,
Multiple light-emitting component, it is electrically connected with the described wiring part exposed from described covering part;
Seal member, it incites somebody to action respectively this encapsulating luminescent element,
Described covering part at least comprises light-storing material in its part.
2. light-emitting device as claimed in claim 1, wherein, in covering part entirety containing described light-storing material.
3. light-emitting device as claimed in claim 1, wherein, described covering part has lit-par-lit structure, is configured with the layer comprising described light-storing material in the most surface of this lit-par-lit structure.
4. the light-emitting device according to any one of claims 1 to 3, wherein, the outer rim of described seal member is configured in described covering part, the outside of described light-storing material from the below of described seal member to described seal member and arranging.
5. light-emitting device as claimed in claim 1, wherein, described covering part has the protuberance comprising described light-storing material on its surface.
6. the light-emitting device according to any one of Claims 1 to 5, wherein, described seal member comprises fluorophor.
7. the light-emitting device according to any one of claim 1 ~ 6, wherein, described light-storing material is Sr 4al 16o 25: Eu, Dy, and seal member comprises by from described Sr 4al 16o 25: the excitation at least partially of the light of Eu, Dy, sends visibility ratio from described Sr 4al 16o 25: the fluorophor of the light that the light of Eu, Dy is high.
8. light-emitting device as claimed in claims 6 or 7, wherein, described fluorophor comprises YAG class, CASN class or their combination.
9. the light-emitting device according to any one of claim 1 ~ 8, wherein, described seal member is not containing described light-storing material.
CN201380037392.2A 2012-09-26 2013-09-18 Light-emitting device Active CN104488096B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688082B (en) * 2016-05-24 2020-03-11 日商大日本印刷股份有限公司 Substrate for LED element and LED display device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6070188B2 (en) * 2012-12-28 2017-02-01 日亜化学工業株式会社 Light emitting device
CN103199187B (en) * 2013-04-19 2015-11-25 安徽三安光电有限公司 A kind of LED encapsulation substrate and encapsulating structure and preparation method thereof
JP6458492B2 (en) * 2014-12-25 2019-01-30 大日本印刷株式会社 LED element substrate and manufacturing method of LED mounting module using the same
DE102017130008A1 (en) * 2017-12-14 2019-06-19 Siteco Beleuchtungstechnik Gmbh LED COMPONENT WITH A TILE PATTERN OF CONTACT SURFACES

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008191321A (en) * 2007-02-02 2008-08-21 Stanley Electric Co Ltd Surface light source device using color conversion filter
CN101384853A (en) * 2006-02-20 2009-03-11 斯坦雷电气株式会社 Illumination device
US7579628B2 (en) * 2004-10-18 2009-08-25 Sharp Kabushiki Kaisha Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave
JP2012015320A (en) * 2010-06-30 2012-01-19 Sharp Corp Light emitting element package, method for manufacturing the same, light emitting element array, and display device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10144963A (en) * 1996-11-05 1998-05-29 Sanyo Electric Co Ltd Led light source and its manufacture
JP2001312235A (en) * 2000-04-28 2001-11-09 Hase Puro:Kk Luminous sheetlike body
JP4125878B2 (en) * 2001-08-27 2008-07-30 東芝電子エンジニアリング株式会社 Light emitting device
GB2382648B (en) * 2001-12-11 2003-11-12 Amersham Pharm Biotech Uk Ltd System and method for time correlated multi-photon counting measurements
JPWO2004081140A1 (en) * 2003-03-13 2006-06-15 日亜化学工業株式会社 LIGHT EMITTING FILM, LIGHT EMITTING DEVICE, LIGHT EMITTING FILM MANUFACTURING METHOD, AND LIGHT EMITTING DEVICE MANUFACTURING METHOD
JP2005101023A (en) 2003-09-22 2005-04-14 Haruo Komatsu Phosphor using light-emitting diode
JP2005108783A (en) * 2003-10-02 2005-04-21 Citizen Electronics Co Ltd Switch substrate
JP4691955B2 (en) * 2003-10-28 2011-06-01 日亜化学工業株式会社 Fluorescent substance and light emitting device
PT1690913E (en) * 2003-11-06 2010-09-30 Nemoto Tokushu Kagaku Kk Phosphorescent phosphor and method of manufacturing thereof
JP2006179572A (en) * 2004-12-21 2006-07-06 Sharp Corp Light emitting diode, backlight device and method of manufacturing the light emitting diode
JP4049186B2 (en) * 2006-01-26 2008-02-20 ソニー株式会社 Light source device
JP2007234632A (en) 2006-02-27 2007-09-13 Stanley Electric Co Ltd Lighting system
WO2007097262A1 (en) 2006-02-20 2007-08-30 Stanley Electric Co., Ltd. Illumination device
KR100946015B1 (en) * 2007-01-02 2010-03-09 삼성전기주식회사 White led device and light source module for lcd backlight using the same
JP2009176923A (en) * 2008-01-24 2009-08-06 Shogen Koden Kofun Yugenkoshi Photoelectron device
JP2010103522A (en) * 2008-10-21 2010-05-06 Seoul Opto Devices Co Ltd Ac drive type light-emitting element with delay phosphor and light-emitting element module
US20100123386A1 (en) * 2008-11-13 2010-05-20 Maven Optronics Corp. Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices
US8836130B2 (en) * 2009-01-23 2014-09-16 Nichia Corporation Light emitting semiconductor element bonded to a base by a silver coating
JP5517037B2 (en) * 2009-08-06 2014-06-11 独立行政法人物質・材料研究機構 Phosphor, method for manufacturing the same, and light emitting device using the same
WO2012001938A1 (en) * 2010-06-28 2012-01-05 パナソニック株式会社 Light emitting device, backlight unit, liquid crystal display device, and lighting device
KR20120022410A (en) * 2010-09-02 2012-03-12 삼성엘이디 주식회사 Light emitting diode package and manufaturing method thereof
JP5545866B2 (en) * 2010-11-01 2014-07-09 シチズン電子株式会社 Semiconductor light emitting device
JP2013135193A (en) * 2011-12-27 2013-07-08 Goo Chemical Co Ltd Printed wiring board

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7579628B2 (en) * 2004-10-18 2009-08-25 Sharp Kabushiki Kaisha Backlight device for liquid crystal display including a plurality of light emitting diodes within their own concaves aligned in a straight line within a larger concave
CN101384853A (en) * 2006-02-20 2009-03-11 斯坦雷电气株式会社 Illumination device
JP2008191321A (en) * 2007-02-02 2008-08-21 Stanley Electric Co Ltd Surface light source device using color conversion filter
JP2012015320A (en) * 2010-06-30 2012-01-19 Sharp Corp Light emitting element package, method for manufacturing the same, light emitting element array, and display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688082B (en) * 2016-05-24 2020-03-11 日商大日本印刷股份有限公司 Substrate for LED element and LED display device

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