CN104488071B - Substrate board treatment and device making method - Google Patents

Substrate board treatment and device making method Download PDF

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Publication number
CN104488071B
CN104488071B CN201380038134.6A CN201380038134A CN104488071B CN 104488071 B CN104488071 B CN 104488071B CN 201380038134 A CN201380038134 A CN 201380038134A CN 104488071 B CN104488071 B CN 104488071B
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substrate
functional layer
pattern
lyophily
lyophobicity
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CN104488071A (en
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奈良圭
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Nikon Corp
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Nikon Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

Abstract

A kind of substrate board treatment and device making method that can be accurately formed at fine pattern on substrate is provided.Coating produces the functional layer (coupling agent) of lyophily/lyophoby sex differernce by luminous energy on substrate, light pattern is carried out to be formed, lyophily/lyophobicity is based on to functional layer and assigns contrast, afterwards, solution atomization comprising the raw material material for being used for electronic device etc. is made by ultrasonic wave etc. and substrate surface is ejected into, thus spraying is attached to the high lyophily portion in the surface in substrate surface, raw material material is optionally deposited.

Description

Substrate board treatment and device making method
Technical field
The present invention relates to substrate board treatment and device making method.
Background technology
In the big picture display elements (display panel) such as liquid crystal display cells, deposited on plane glass substrate Coating photoresist after the semiconductor substances such as the transparent electrode layers such as ITO, Si layer, insulating film layer or wiring metallic diaphragm etc. Agent and transfer circuit pattern, development of photoresist is made after transfer, is then etched, circuit pattern etc. is consequently formed. However, there is problems with：With the large screen of display element, glass substrate is changed into maximization, therefore the conveying dress of substrate Put, processing unit is also changed into maximization, production line (factory) becomes huge etc..Therefore, it is proposed to a kind of with flexible base Being claimed for display element is directly formed on plate (thin film component such as polyimides, PET, metal foil, very thin glass sheet etc.) For the technology (referring for example to patent document 1) of volume to volume (roll to roll) mode (hereinafter referred to as " volume mode ").
In the case where handling flexible thin film component by volume mode, expect to use and conventional producer Method is compared to usage amount, the use of various production factors (electric power, pneumatics, refrigerant etc.) for cutting down the various materials relevant with manufacture Amount etc. and the smaller addition of carrying capacity of environment (additive) manufacture.Manufacture disclosed in patent document 1 is not yet Using the photoetching process of conventional use photoresist, but formed in the fine pattern of TFT (thin film transistor (TFT)), wiring etc. When, based on based on the autofrettage that the material of needs is only covered in the ink-jetting style for needing part etc..
In addition, Patent Document 2 discloses following methods：By this ink-jetting style by the ink material of electric conductivity When being optionally coated on thin-film material and forming electrode layer, wiring layer, self-assembled monolayer (SAM layer) is being formed uniformly Afterwards, after the corresponding patterning of shape of irradiation and electrode, wiring ultraviolet and make the wettability of the surface (parent of SAM layer Liquid/lyophobicity) it is modified after, apply ink material.
In addition, in patent document 3, as can expect to obtain large-duty method, disclosing one kind will film forming Material solution spraying (mist) via shadow mask (shadow mask) on substrate apply, formed pattern method.At this Herein below is also disclosed that in patent document 3：It is advance to substrate surface to assign based on lyophily and dredge in the same manner as ink-jetting style After the contrast of fluidity, shadow mask is overlapped on substrate and pattern is formed, in experimental example, formed on substrate with formed objects The patterns of openings of 0.5mm × 12mm on shadow mask.
Citation
Patent document
Patent document 1：International Publication publication WO2008/129819 pamphlets
Patent document 2：International Publication publication WO2010/001537 pamphlets
Patent document 3：No. 4387775 publications of Japanese Patent No.
The content of the invention
Problems to be solved by the invention
However, in ink-jetting style, by the functional materials such as the conductive material Jing Guo nano-ink from ink ejecting heads with The mode of droplet is optionally coated on the designated area on substrate, therefore for example small in pattern magnitude (line width, point size) In the case of less than 20 μm, there is following problem because of the land low precision of the droplet of ink from ejecting head, i.e. even if pre- First make to have on substrate the enforcement ink of going forward side by side of the contrast based on lyophily, lyophobicity to concentrate on and handled as lyophily portion, it is also difficult To form clearly pattern.Certainly, it is also contemplated that ink ejecting heads, ink material are improved and make spray once from ejecting head The droplet of ink that mouth sprays further is reduced, but there is the problem of productivity ratio substantially reduces such.
On the other hand, in the method disclosed in patent document 3, due to configuring shadow mask relative to substrate interval, Therefore the problem of patterns of openings that the pattern magnitude that presence is formed on substrate is typically larger than on shadow mask is such.In patent document 3 In, due to being that 500 μ m, 1200 μm of this big patterns are transferred, even if therefore pattern edge increase by 5 μm or 10 μm or so, Influence is also smaller.However, in the case of fine pattern below 20 μm, pattern edge increases by 5 μm or 10 μm or so of situation As big problem, and in the case where multiple this fine patterns are adjacent, also produce pattern adjacent to each other and be connected with each other this The problem of kind.
Also, in the case where assigning the contrast of lyophily and lyophobicity to substrate surface and being used together shadow mask, also produce Shadow mask and the relative bit errors by the substrate after lyophily/lyophoby processing are given birth to, therefore fine pattern is limited by shadow mask precision System.In addition, in addition it is also necessary to following to prepare, i.e., it is formed uniformly the lyophoby based on lyophobicity material in the substrate surface of lyophily in advance Layer, and optionally remove lyophobic layers using photoetching technique and form pattern etc..In addition, also in the presence of micro- by less than 20 μm The wide linear pattern of fine rule, contact hole (through hole) pattern are fabricated to shadow mask this process natively highly difficult this problem in itself.
The present invention considers above-described problem and completed, it is therefore intended that offer is a kind of can be by the material of electronic device Material is accurately formed at the manufacture method of the substrate board treatment and device on the substrates such as film in the way of miniaturization.
The solution used to solve the problem
There is provided a kind of substrate board treatment in the first scheme of the present invention, possess：Functional layer forming portion, it passes through light The functional layer that lyophily/lyophobicity is modified can be formed on the surface of the substrate such as film or sheet material；Light pattern forming portion, it is to the function The luminous energy that layer is irradiated after being patterned, forms the pattern that contrast is produced based on lyophily/lyophobicity；And sprayed deposit portion, its Make the functional solution atomization of the molecule comprising the material substance for above-mentioned electronic device, particle, and by it together with carrier gas The surface of substrate is delivered to defined flow velocity.
According to the alternative plan of the present invention there is provided a kind of substrate board treatment, possess：Functional layer forming portion, it passes through light The functional layer that lyophily/lyophobicity is modified can be formed on the surface of substrate；Pattern forming portion, it is patterned to functional layer irradiation Luminous energy afterwards, forms the pattern that contrast is produced based on lyophily/lyophobicity；Sprayed deposit portion, it makes to include forms for pattern The molecule of material substance, the functional solution atomization of particle, and it is delivered to substrate together with carrier gas with defined flow velocity Surface；And measurement portion, it is measured makees in a part for the pattern for having been assigned contrast by above-mentioned pattern forming portion The thickness or pattern magnitude of the layer for the functional solution for adhering to for spraying and depositing or the layer of material substance.
Invention effect
In the present invention, fine pattern can be more precisely formed on substrate compared with mode of printing, ink-jetting style, And the film formed by the material that should be formed selectively pattern with the thickness having good uniformity can be simply formed Layer.
Brief description of the drawings
Fig. 1 is the figure of the Sketch for the substrate board treatment for illustrating first embodiment.
Fig. 2 is the figure for the chemical constitution for representing to be covered in the photonasty silane coupler on substrate.
Fig. 3 is the figure of one of the image element circuit for representing active array display unit.
Fig. 4 A are the top views of the transistor configurations for the image element circuit for representing Fig. 3.
Fig. 4 B are 4B-4B in Fig. 4 A to regarding sectional view.
Fig. 5 is the integrally-built figure for the substrate board treatment for representing second embodiment.
Fig. 6 is the figure of the structure of a part of unit for the substrate board treatment for representing the 3rd embodiment.
Fig. 7 is the figure of various patterns for representing to be formed on the sheet material as processed substrate.
Fig. 8 is the figure of the structure of a part of unit for the substrate board treatment for representing the 4th embodiment.
Embodiment
(first embodiment)
Hereinafter, the first embodiment of the substrate board treatment of the present invention is illustrated referring to figs. 1 to Fig. 4 B.Fig. 1 shows substrate The summary overall structure of processing unit, in the present embodiment, is configured in the flexible substrate P allusion quotations that will be provided from supply roll FR1 It is fed sequentially into after four processing units U1, U2, U3, U4 with reclaiming volume FR2 windings, in substrate P from supply roll RF1 quilts type During being transported to recovery volume RF2, the fine pattern based on functional material is deliberately formed in substrate P.
Processing unit (functional layer forming portion) U1 is such as the transfer platen Gpa for possessing printing, by the close and distant liquid of photonasty The fluorine-based silane coupler with lyophobicity is included in coupling agent, such as nitrobenzyl and is homogeneously applied to substrate P surface At least whole pattern forming region.In addition, being not generally formed pattern at the back side of substrate P, therefore transfer platen can also be passed through Gpb the back side coated with hydrophobic of substrate P film, it is unwanted heavy not producing in the sprayed deposit of subsequent handling Product.
The photonasty silane coupler (photo-sensitive sam) used in the present embodiment is as one shown in Fig. 2 Chemical formula is constituted, what its detailed content was for example held in independent administrative corporation/JST on June 19th, 2009 The paper 1 issued on " new technology illustrates meeting "：" repair Ornaments drug The い black light To I Ru Fine born of the same parents' パ タ ー ニ Application グ in surface Skill Intraoperative (the cell patterning techniques based on black light for having used coating material) " or Japanese Unexamined Patent Publication 2003-321479 Disclosed in number publication, Japanese Unexamined Patent Publication 2008-050321 publications.
In fig. 2, what is applied on the surface of substrate P ought make solvent seasoning after coating containing fluorine-based silane coupler When, its surface turns into the region HPB containing fluorine-based lyophobicity.When the ultraviolet that will form pattern with regulation illumination on the surface After the UV irradiation stipulated times, fluorine-based key departs from, and the lyophobicity of the part relatively reduces and turns into lyophilised region HPR. Herein below is disclosed in the experimental example disclosed in Japanese Unexamined Patent Publication 2008-050321 publications：The ultraviolet of substrate surface is not Contact angle in irradiation area is 110 ° (hydrophobicity), and the water of TMAH (TMAH) is used after irradiation ultraviolet radiation Solution cleaning base plate, thus, the contact angle in the region being irradiated with are reduced to 20 ° or so (being changed into lyophily).
Then, the substrate P of coupling agent is coated with to be dried (below 200 degree by abundant in next processing unit U2 Under the conditions of heated) after, processing unit U3 (pattern forming portion) is transported to, here, ultraviolet after being patterned The luminous energy of line is irradiated to the layer (functional layer) based on coupling agent on substrate P surface with ormal weight.It is provided with processing unit U3 Illuminator IU and projection optical system PL etc., illuminator IU include the roller mask for being formed with fine pattern mask DM, ultraviolet range (below wavelength 400nm) light source, and to the illumination light of roller mask DM irradiation ultraviolet radiations, the projected light System PL makes the ultraviolet patterned by roller mask DM be imaged in substrate P.Processing unit U3 is segmentation exposure side The exposure device of formula or scan mode, but can also be the description machine of beam sweep type, use DMD etc. maskless to expose Ray machine etc..
As shown in Fig. 2 after photonasty silane coupler is coated on into substrate P surface and it is dried, with lyophoby Property it is fluorine-based combined with nitrobenzyl, the part turns into the region HPB of lyophobicity, but when ultraviolet with the irradiation of the amount of predetermined energy During line UV, the nitrobenzyl of illuminated part reacts and fluorine-based key departs from, and the lyophobicity of the part reduces and turns into parent The region HPR of fluidity.That is, it is transferred as by the roller mask DM light patterns generated in substrate P with the difference of lyophily/lyophobicity The pattern presented a contrast.
In addition, in order to from substrate P surface remove key have disengaged from it is fluorine-based, expect by Japanese Unexamined Patent Publication 2008-050321 TMAH disclosed in number publication after being cleaned by the substrate P after processing unit U3 exposures to drying it.Therefore, in processing The rinse bath based on TMAH, the rinse bath based on pure water, drying section etc. are provided between unit U3 and processing unit U4.
Carry out the substrate P after exposure-processed (or washing and drying treatment) and be then delivered to processing unit (spraying Deposition portion) U4.In processing unit U4, using the so-called membrane formation process for being referred to as sprayed deposit (mist deposition), for example The principle arrangement structure for this is disclosed in Japanese Unexamined Patent Publication 2005-307238, in paper 2：Kyoto University is published, " ミ ス ト CVD と そ acidifying Ami qian Bao Mo Cheng Long へ ying Yong に Seki The Ru researchs are (on spraying CVD and its to zinc oxide films The research of the application of film growth) " (distribution on March 24th, 2008) [URI:http://hdl.handle.net/2433/57270] Page 35, page 43~65 in show the experimental example of the thin film deposition for making zinc oxide (ZnO) by the spray deposition.
It is provided with processing unit U4：Atomizer GS1, it is made containing substrate P to be deposited on by ultrasonic oscillator The molecule of raw material material on the HPR of lyophily region or the liquid (functional solution) of particle turn into spray form；Gas is supplied Portion GS2, it provides nitrogen (N with defined flow2), argon (Ar), air (O2) etc. carrier gas；Blender ULW, it will with normal concentration The spraying of functional solution is mixed with carrier gas；Reative cell TC, it makes the gas being mixed to get with defined flow velocity and the table of substrate P Face is contacted；And oral area De is reclaimed, it is used to reclaim the gas in reative cell TC.
As raw material material, selection is comprising as oxide semiconductor or organic semi-conductor molecule, CNT Solution, the electrode comprising metal nanoparticle with or wiring solution or with the molten of the molecular configuration as dielectric film Liquid.At selective oxidation zinc (ZnO)
In the case of as raw material, as disclosed in above-mentioned paper 2, ZnAc is provided to atomizer GS12, 98%H2O Solution, makes ZnAc by internal 2.4MHz ultrasonic oscillators2Solution atomization.The spraying is fed to reative cell together with carrier gas In TC, former material is optionally caught in the region HPR of the lyophily on the substrate P surface advanced in reative cell TC with fixed speed Material matter (spraying).
The substrate P that sprayed deposit processing has been carried out in processing unit U4 is transported to drying (not shown) (heating) unit Deng, solvent composition etc. is removed from the raw material material deposited in the region HPR of the lyophily on substrate P surface, it is then defeated The treatment process in downstream is sent to, after appropriate treatment process, is winding on recovery volume FR2.So, it have passed through processing In substrate P after unit U4, the thin film layer based on raw material material is the figure of the shape corresponding with lyophily region HPR Case.
In addition, generally, as on the display panel (AMOLED) of the active array type of illuminator, being pressed respectively using organic EL Each pixel according to each pixel (sub-pixel) is provided with the image element circuit based on thin film transistor (TFT) (TFT) shown in Fig. 3.In Fig. 3 In, organic EL members are used as by the transistor TR1 and the two transistor drivings of the transistor TR2 of electric current driving of pixel switch The light emitting diode OLED of part.Luminance signal Yc corresponding with its pixel, transistor are applied to transistor TR1 drain electrode D1 TR1 responds the synchronous clock pulse Hcc to transistor TR1 gate electrode G1 applies and conduction and cut-off.
When transistor TR1 is turned on, luminance signal Yc voltage level is held in capacitor Cg, and puts on transistor TR2 gate electrode G2.The corresponding driving current of voltage of TR2 pairs of the transistor with putting on gate electrode G2 is carried out from drain electrode D2 streams Converted to voltage/current as source electrode S2.Thus, light emitting diode OLED is provided from power bus Vdd and believed with brightness Number corresponding electric currents of Yc, light emitting diode OLED is with Intensity LEDs corresponding with the size of the electric current.
This image element circuit is for example constituted as shown in fig. 4 a and fig. 4b.Fig. 4 A are to represent in an image element circuit only The figure of transistor TR1, TR2 planar configuration is shown, Fig. 4 B are 4B-4B in Fig. 4 A to regarding section.In addition, Fig. 4 A and Fig. 4 B institutes The transistor shown is bottom gate type, first, by the formation such as stamped method in recess on the upper surface of substrate P, by based on The formation gate electrode such as print process or non-electrolytic plating method of conductive ink G1, G2.On the gate electrode as shown in Figure 4 B that Sample is laminated gate insulating film Is, still, here, gate insulating film Is and non-formation in the entire surface of substrate P, but with crystalline substance Formed between body pipe TR1 and TR2 for by transistor TR1 source electrode S1 and opening that transistor TR2 gate electrode G2 is electrically connected Oral area HA mode is formed by the deposition process of the selectivity such as print process, ink-jet method.In addition it is also possible to pass through sprayed deposit Method forms the layer of gate electrode.
Semiconductor layer MS and each crystal based on the organic, oxide-based or CNT provided as solution etc. The forming region of pipe accordingly, is selectively deposited on dielectric film Is by print process, ink-jet method etc..When for making partly to lead At the end of (less than 200 DEG C) such as the process annealings of body layer MS crystallizations (orientation), the coatings such as conductive ink and drain electrode are used D1, D2 and the corresponding pattern of source electrode S1, S2.Now, in dielectric film Is opening portion HA, transistor TR2 gate electrode G2 Expose, when using coating corresponding patterns with transistor TR1 source electrode S1 such as conductive inks, the endogenous electricity of HA in opening portion Pole S1 is attached with gate electrode G2.
In the image element circuit with this structure, the technique of present embodiment can for example form gate electrode G1, G2 Process, form semiconductor layer MS process or formed and applied in the process of drain electrode D1, D2 and source electrode S1, S2.But, During by spray deposition formation film, expect the size according to the pattern to be formed and will make to include former material material The concentration of the raw material material included in spraying size, the spraying during solution atomization of matter, the concentration of the spraying in carrier gas are (following Collectively referred to as spray concentration), temperature in the flow velocity of carrier gas and reative cell TC etc. optimizes.
In the present embodiment, it is fine with conventional photoetching process identical in order to expeditiously be formed by spray deposition Pattern, applies the material (silane coupler) that lyophily, lyophoby change by photonasty in substrate P, will be by fine figure Light after case forms the pattern of the fine of the contrast with hydrophilic/hydrophobic to irradiation in substrate P.Therefore, in substrate P Surface in, the high region HPR of lyophily is compared with the high region HPB of lyophobicity, and its surface can increase, thus easily attachment spray Mist, raw material material can be deposited optionally.
Here, Epb, the surface energy by the high region HPR of lyophily can be set to by the high region HPB of lyophobicity surface by working as Be set to Epr, the surface of the solvent of spraying can be set to Eem, spray diameter is set to φ m, the size for the pattern that will be formed When (minimum feature etc.) is set to Δ Dp, be set as meeting in following relations I, relations I I any one or both relation.
Relations I：Surface can Epb<Eem<Epr
Relations I I：Spray size (diameter) 0.2 Δ Dp<φm<ΔDp
In the case that spray diameter φ m are big compared with the minimum feature Δ Dp with pattern to be formed, in the high area of lyophily On domain HPR (line width Δ Dp), spraying is overflowed and adhered to, but the spraying sometimes grows into big spraying due to its own face energy, Overflow and flow from the high region HPR of lyophily.Therefore, not spray excessive preferably compared with the pattern magnitude (Δ Dp) to be formed Mist diameter.In addition, when spray diameter is too small, the sedimentation time for forming pattern is long, so that productivity ratio can be reduced.
As one, in the image element circuit shown in Fig. 4 A and Fig. 4 B, by constitute transistor TR1, TR2 drain electrode and The pattern line-width of source electrode is set to 20 μm or so, the pattern line-width of gate electrode is set to 6 μm or so, the size by semiconductor layer MS It is set in the case of 40 × 30 μm or so, is 1.2 μm by spraying size φ m during spray deposition formation gate electrode<φm<6 μm, it is 6 μm by spraying size φ m during spray deposition formation semiconductor layer MS<φm<30μm.In addition, for forming TFT Electrode (wiring) layer, semiconductor layer, dielectric film etc. in terms of electrical property optimum thickness it is different, it is therefore desirable to according to what is deposited The thickness of pattern come change the spray concentration in reative cell TC, change substrate P transporting velocity or spray gas flow velocity, change The adjustment of temperature in reative cell TC etc..
Technique shown in Fig. 1 is, for the technique by spray deposition one layer of formation, to pass through spray deposition shape During into some layers of the device as multi-ply construction, by the group of processing unit U1~U4 in Fig. 1 and the number of plies correspondingly company of series connection Connect and conveying substrate P successively.
(second embodiment)
Then, reference picture 5 illustrates the device inspection apparatus for embodying aforesaid substrate processing unit.Fig. 5 is to represent device The figure of the partial structurtes of manufacture system (flexible display production line).Flexible substrate P (the pieces drawn from supply roll FR1 are shown Material, film etc.) sequentially pass through n platform processing units U1, U2, U3, U4, U5 ..., Un and be wound in reclaim volume FR2 untill showing Example.Higher level's control device 5 is uniformly controlled each processing unit U1~Un for constituting production line.
In Figure 5, orthogonal coordinate system XYZ is set in the surface (or back side) of the substrate P mode vertical with XZ faces, and The width orthogonal with the conveying direction of substrate P (length direction) is set as Y-direction.In addition, the substrate P can also be pre- First pre-processed as defined in implementation and be used for the substrate for covering stronger surface modification for making photonasty silane coupler, Or the fine next door being formed with surface for forming precise pattern constructs the substrate of (sag and swell).
The driven roller DR1 that substrate P on supply roll FR1 is clamped draws and is transported to processing unit U1, passes through Marginal position controller EPC1 carries out SERVO CONTROL to the center of the Y-direction (width) of substrate P so that relative to target position Put and be convergent in the range of ± more than ten μm~tens μm or so.
Processing unit U1 is to be connected by mode of printing on the surface of substrate P along the conveying direction (length direction) of substrate P Continuous ground or the optionally applying device of coating photonasty functional liquid (photonasty silane coupler).Set in processing unit U1 Be equipped with applying mechanism Gp1 and drier Gp2, applying mechanism Gp1 include be used for wind substrate P roller platen DR2, for The painting application roller of photonasty functional liquid is uniformly applied or for making photonasty work(to substrate P on roller platen DR2 Printing forme roller that energy liquid forms pattern and applied etc., drier Gp2, which is used to rapidly remove, to be coated in substrate P Solvent or moisture that photonasty functional liquid is included etc..
Processing unit U2 is following heater：Set point of temperature is heated to by next substrate P is conveyed from processing unit U1 (such as tens~120 DEG C or so), for making the photonasty functional layer for being coated on surface stable.Set in processing unit U2 Have：Multiple rollers and air turning-bar (air turn bar) for conveying that substrate P is turned back；For the substrate P to being moved into The heating chamber portion HA1 heated；It is down at a temperature of for making the substrate P after heating and subsequent handling (processing unit U3) The consistent cooling chamber portion HA2 of environment temperature；And the driven roller DR3 of clamping etc..
Processing unit U3 for forming pattern is shone conveying the photonasty functional layer for the substrate P come from processing unit U2 Penetrate the exposure device of the patterned light of ultraviolet corresponding with circuit pattern, the wiring pattern of display.In processing dress Put in U3 and be provided with：The center of the Y-direction (width) of substrate P is controlled into the marginal position controller on fixed position EPC；The driven roller DR4 of clamping；By substrate P with the local winding and by the part by pattern exposure in substrate P of defined tension force The rotating cylinder DR5 (impressing body) supported with identical cylinder planar；And for assigning defined relaxation (clearance) DL to substrate P Two groups of driven rollers DR6, DR7 etc..
It is additionally provided with processing unit U3：Infiltration type cylinder mask DM (mask unit)；Lighting mechanism IU (Lighting Divisions 10), it is arranged in cylinder mask DM, and the mask pattern being formed on cylinder mask DM outer peripheral face is entered by ultraviolet Row illumination；And aligming microscope AM1, AM2, it is in order to by the picture and substrate P of a part for cylinder mask DM mask pattern Relatively position and (be aligned) with by a part for the rotating cylinder DR5 substrate Ps supported with cylinder planar, and detect and be previously formed in base Alignment mark on plate P etc..
Processing unit U4 is to be carried out to conveying the photonasty functional layer for the substrate P come from processing unit U3 at sprayed deposit Device is managed, except atomizer GS1, the supply unit GS2 of carrier gas, blender ULW, reative cell TC and the recovery shown in above-mentioned Fig. 1 Beyond oral area De, it is also equipped with：Differential exhaust chamber DE1, DE2, it is arranged at reative cell TC prime and rear class；Thermoregulative mechanism HP, The temperature of its temperature for adjusting the gas of the raw material material being atomized passed through out of reative cell TC and the substrate P of conveying；Collection Dirt mechanism RT, it catches molecule, the particle of the raw material material included via reclaiming in the gas that oral area De is reclaimed；And unit Control unit CUC, its uniformly control process unit U4 action.
In sprayed deposit, the solution atomization of various raw material materials can be made, but in these materials, particularly carbon Nanotube (hereinafter referred to as CNT) is harmful when also there is a situation where to disperse in an atmosphere.Therefore, reative cell TC is set to gas The high construction of close property, be provided with its prime and rear class can conveying substrate P simultaneously so as to include the atomization of raw material material Mode sealed differential exhaust chamber DE1, DE2 that gas afterwards will not be leaked to outside device.In addition, atomizer GS1, the confession of carrier gas Structure to portion GS2 etc. can set ultrasonic oscillator using the structure disclosed in above-mentioned paper 2 in atomizer GS1, according to It is required to spray size to adjust frequency of oscillation, oscillation intensity.
Processing unit U5 is that the substrate P come from processing unit U4 conveyings is heated and made by spray deposition in base The heat drying that the raw material material deposited on plate P lyophily region HPR is dried and moisture is adjusted into setting is filled Put, but detailed description will be omitted.Afterwards, by some processing units and pass through series of process last processing unit Un after Substrate P is recovered volume FR2 via the driven roller DR1 of clamping and rolled.When in progress, this is rolled, also by marginal position controller EPC2 Relative position to driven roller DR1 and the Y-direction for reclaiming volume FR2 is modified control successively, to cause the Y-direction of substrate P (wide Degree direction) center or the edge of substrate of Y-direction will not produce deviation in the Y direction.
Each processing unit U1~Un of higher level's control device 5 uniformly in control figure 5, response carrys out measurement and is formed at substrate The signal of the various measurement sensors of the state of pattern on P, the various sensors of feed status for monitoring substrate P etc., as Main points, also carry out technologic feedback control, feedforward control.In above-mentioned device inspection apparatus, used as processing unit U3 The exposure device of fine pattern, which can be deliberately formed, therefore be formed at the border in the lyophily in substrate P/lyophoby portion becomes pole The mode of the raw material material after atomization is separated out on lyophily region HPB clearly and in substrate P, therefore, it is possible to high-precision Degree ground forms fine pattern.
According to the manufacture method using manufacture system as described above, in the patterning to photonasty functional material application With photoetching process identical exposure method, can be with therefore compared with mode of printing, ink-jetting style, metal mask (shadow mask) mode High accuracy forms fine pattern.Also, also used without using vacuum film formation apparatus, Etaching device etc. in conventional photo-mask process Expensive device, further, since can make raw material only it is desirable that separate out part in deposit, therefore also without pass through erosion Carve and remove unnecessary portion, obtain the advantages of carrying capacity of environment is few.
(the 3rd embodiment)
Figure 5 illustrates sprayed deposit processing unit U4 in, preferably meet above-mentioned relation I or relations I I, and And the spray concentration in reative cell TC, gas flow rate, temperature, transporting velocity of substrate P etc. are set to adjusting parameter in advance.This is Thickness, compactness for the raw material material that controls to deposit in the high region HPR of the lyophily in substrate P.Also, set The function of the thickness of the raw material material deposited in the high region HPR of lyophily is measured, according to its measured value, is dynamically changed The processing time of sprayed deposit, condition (adjusting parameter), are also useful.
Fig. 6 represents to be provided with the thickness for measuring deposited pattern in the processing unit U4 of the sprayed deposit shown in Fig. 5 One of the function of degree, to marking identical reference with the structure of the part identical function in Fig. 5.In figure 6, lead to The driven roller DR8 being arranged in the differential exhaust chamber DE1 and driven roller DR9 being arranged in differential exhaust chamber DE2 is crossed, by substrate P keeps regulation tension force in reative cell TC and conveyed to X-direction.
In the present embodiment, the position of the close differential exhaust chamber DE1 in reative cell TC, from blender ULW1 connections Oriented substrate P surface sprays the first jet NZ1 of the gas after the atomization of the solution comprising raw material material, downstream also from Blender ULW2 is connected with the second nozzle NZ2 of the gas after the atomization for spraying the solution comprising raw material material.By unit control Portion CUC processed is suitably controlled to two blenders ULW1, ULW2, so as to be wrapped from each nozzle NZ1, NZ2 gas sprayed The spray concentration contained is identical or difference.Can by changing from supply unit GS2 (reference picture 5) to each blender ULW1, ULW2 supply carrier gas with from atomizer GS1 (reference picture 5) to the mixing of each blender ULW1, ULW2 spray gas supplied Than realizing spray concentration.
The close differential exhaust chamber DE2 in the downstream in reative cell TC position is provided with for attracting and reclaiming from nozzle The nozzle VT for the gas that NZ1, NZ2 spray, gas in reative cell TC by the exhaust unit Exo flows controlled to be transported to back Closing in portion De.By adjusting the gas flow attracted from the total flow of nozzle NZ1, NZ2 gas sprayed and by nozzle VT, energy Enough air-flows formed in reative cell TC along the conveying direction (X-direction) of substrate P.The speed ratio substrate P of the air-flow can be made Transporting velocity it is slow, fast or identical with the transporting velocity of substrate P.
In Fig. 6 structure, from the stream of nozzle NZ1 or nozzle NZ2 untill nozzle VT in reative cell TC it Between carry out sprayed deposit, but the adjusting range of spray concentration is big, and the stream of gas can be adjusted according to the transporting velocity of substrate P Speed, therefore, it is possible to be implemented as expecting the pattern formation (deposition) of thickness.
In addition, in the present embodiment, in reative cell TC, in gas recovery with nozzle VT downstream and in most downstream Position on be provided with and surveyed for the thickness of the solution comprising raw material material to being deposited in substrate P as spraying Fixed measurement sensor TMS, its measured value is sent to unit control unit CUC.Unit control unit CUC be based on the measured value come Judge whether to adjust the processing conditions (spray concentration, gas flow rate, temperature etc.) in reative cell TC.In the tune as processing conditions In the case that transporting velocity that is whole and making substrate P changes, driving electricity of the unit control unit CUC to driven roller DR9 (or DR8) Machine output signal Ds1, adjusts rotary speed.
Using light interference type film thickness measuring device, light splitting ellipsometer etc. as measurement sensor TMS, but reative cell TC's On the position of most downstream, the spraying being deposited in substrate P also includes solvent (moisture), therefore can not obtain exactly by original sometimes The thickness for the pattern that material substance densely be formed.Therefore, as shown in fig. 6, can also sprayed deposit processing unit U4 Afterwards (after action exhaust chamber DE2) and after the processing unit U5 of substrate P heat drying is made, set and driven by a pair of clampings The reservoir for the substrate P that roller NR1, NR2 and dance roller DSR are constituted, sets the measurement sensor TMS of thickness immediately after.
So, and then after the reservoir of substrate P, the pattern of the desired measurement in substrate P can be positioned at measurement Sensor TMS underface, and make the substrate P static set time (such as several seconds), it can be ensured that measurement sensor TMS survey The amount time.According to the oscillating stroke Ld of the Z-direction of speed Vo and dance roller DSR from the processing unit U5 substrate Ps taken out of To be determined to the time for making substrate P static.For example when it is 50cm that the speed Vo of substrate P, which is 5cm/s, stroke Ld, immediately The position of the measurement sensor TMS after reservoir, substrate P can be made static most 20 seconds.
In the measurement sensor TMS after processing unit U5, from the raw material material deposited by sprayed deposit Liquid component is eliminated in patterned layer, therefore, it is possible to accurately measure its thickness.Measurement sensor in the TC of expected response room Measurement sensor TMS after TMS, processing unit U5 can measure the thickness of fine pattern (such as below 20 μm of line width). For example, the name of product that K-MAC companies of South Korea are sold is calculated as ST2000-DLXn, ST4000-DLX light interference type thickness Microscope types, therefore also easy, small to several μm of the diameter of measuring hot spot is installed, time of measuring is also within several seconds. In addition it is possible to by Dainippon Screen Mfg.Co., Ltd. (big Japan ス ク リ ー ン System make Co., Ltd.) product Entitled ラ system ダ エ ー ス VM-1020/1030 light interference type film thickness measurement device, the ProductName for being equipped with light splitting ellipsometer The measurement sensor TMS for claiming RE-8000 etc. to be used as after processing unit U5.
In the figure formed using measurement sensor TMS as described above measurements by the raw material material being deposited in substrate P During the thickness of case, the TFT of the device (display panel) that can be formed at direct measurement in substrate P part, wiring portion it is specific Layer, but the outside of nmosfet formation region that can also be in substrate P sets the test pattern (test of thickness measure Pattern) forming region of (mark) and measure the thickness of the raw material material deposited herein.The explanation of reference picture 7 is set so One of situation of test pattern.
Fig. 7 is multiple devices (display panel) region 100 for representing to be formed in substrate P and is formed with test pattern The top view of multiple marked region MK1~MK5 configuration.Here, manufacture transverse and longitudinal ratio is 16:9 and picture size is 32 inches Used as television display panel, the long side direction of display panel areas 100 is configured at the length direction (X-direction) of substrate P.Each face Plate region 100 is configured on the length direction of substrate P separate defined blank, the two of the width (Y-direction) of substrate P Sidepiece also sets the blank of fixed width.In gutter between each panel zone 100 three marks are disposed separately along Y-direction Remember region MK1, MK2, MK3, two marked regions MK4, MK5 are also provided with the both sides of the Y-direction of each panel zone 100.
Here, being accordingly disposed separately three Fig. 6 along the width of substrate P with marked region MK1~MK5 configuration Shown measurement sensor TMS.It can be seen by any one in each measurement sensor TMS measurement visual field St1, St2, St3 Observe marked region MK1~MK5.The three marked region MK1~MK3 arranged along Y-direction in marked region MK1~MK5 The interior test pattern for forming all same.
One of the test pattern is shown using marked region MK1 as representative, in the figure 7 the dashed circle of lower section In show.Many test patterns can be formed in marked region MK1, the test of the different line blank shape of line width can be configured Pattern MPa, MPd, MPe, MPg, MPh, circular test pattern MPb, rectangular-shaped big test pattern MPc, the survey of two-dimentional point-like Attempt case MPf etc..In the test pattern of line ＆ blank shapes, the figure that spacing direction is the pattern of X-direction and spacing direction is Y-direction Case constitutes one group.In addition, test pattern MPe is that diagonally 45 ° of directions arrange multiple and formed, test pattern by the line of L-shaped MPh is formed as 45 ° of oblique grid pattern.
The line width of line ＆ blank can be accordingly determined with the size of the pattern formed by sprayed deposit.For example in substrate In P panel zone 100 by the electrode pattern of sprayed deposit 20 μm of line width of formation, wiring pattern in the case of, be used as test The line ＆ blank of pattern, for example, will make four groups of exposures in processing unit U3 of line width variation as 40 μm, 30 μm, 20 μm, 15 μm Exposed in light process together with the mask pattern of panel zone 100.On other test pattern MPb, MPc, MPf, also need to The test pattern to be measured exposes together in processing unit U3 exposure process.
In addition it is also possible to only form Y in marked region MK4, MK5 of the both sides for the Y-direction for being configured at panel zone 100 The test pattern for the wire that the width in direction is several mm or so and the length of X-direction is tens mm.If like this in substrate P Length direction on elongated test pattern is set, then for example by the measurement sensor TMS in the reative cell TC shown in Fig. 6, It need not stop the conveying of substrate P, transfiguration is measured to being formed at marked region MK4, MK5 thickness of test pattern Easily.
In addition, marked region MK1 and mark zone can be observed by the measurement sensor TMS with measurement visual field St1 Domain MK4, can observe marked region MK2 by the measurement sensor TMS with measurement visual field St2, can be by with survey Visual field St3 measurement sensor TMS is measured to observe marked region MK3 and marked region MK5, but can also be with by Fig. 6 Processing unit U5 after measurement sensor TMS be marked the film thickness measuring of region MK1~MK3 test pattern, lead to The measurement sensor TMS crossed in reative cell TC enters the mode of the film thickness measuring of region MK4, MK5 test pattern is marked Row is shared.In addition, in each marked region MK1~MK5, by a sprayed deposit come film forming test pattern, therefore multiple In the case of the pattern formation that sprayed deposit is carried out in the range of layer, marked region MK1~MK5 position is preferably opened by every fault.
Other base patterns layer is not present in marked region MK1~MK5 as described above, therefore, it is possible to accurately measure By the thickness of the various test patterns of processing unit U4 (sprayed deposit) film forming.In addition, being used in the big of the test pattern of measurement Small (line width etc.) and the matchingly selection (change) of device pattern (pattern in display panel areas 100), therefore can also Critically control thickness condition.In addition, three marked region MK1~MK3 between panel zone 100 it is respective in, will be same The thickness of kind of test pattern is compared, and thus can also be confirmed and be corrected the membrance casting condition on the width of substrate P not With (spray concentration unequal).In addition, measurement sensor TMS can also be set up in parallel the pattern of not only measurement institute film forming Thickness also measures the sensor of its line width etc..
(the 4th embodiment)
Fig. 8 represents to make the processing unit U4 of the sprayed deposit shown in Fig. 5 and is thermally dried the processing unit of processing U5 integrations and carry out one of device of sprayed deposit while the substrate P is conveyed on rotating cylinder.
In fig. 8, the flexible substrate P moved into is via clamping driven roller NDR, the roller DR10 of tension force around axle AX1 Wound more than half cycle on the rotating cylinder RD of rotation, pass through the air turning-bar in the heat drying unit 20 as processing unit U5 ATB turns back, and is taken out of via roller DR11, the roller DR12 of tension force and clamping driven roller NDR.It is wound with around rotating cylinder RD The cylindric next door for constituting reative cell TC is provided with the circumferential scope of substrate P, is set at the circumferential two ends in the next door There is the airtight bearing Pd for making the spray gas in reative cell TC not flowed out to environment.Certainly, reative cell TC cylinder is being constituted The end in the axle AX1 directions (Y-direction) in the next door of shape be also equipped with for by between rotating cylinder RD gap closing it is airtight Bearing.
As shown in above-mentioned Fig. 1, Fig. 5, Fig. 6, the spraying from atomizer GS1 is led to carrying out self contained gas supply unit GS2 gas Cross blender ULW mixing and form the gas containing spraying there is provided the side to cylindric reative cell TC (substrate P and rotation The part of cylinder RD contacts).This is containing spray gas along the substrate P surface on rotating cylinder RD and along narrow cylindric sky Between flow, arranged in cylindric reative cell TC another side (part that substrate P separate from rotating cylinder RD) from oral area De is reclaimed Go out.
In the present embodiment, the back side of substrate P is made to be close to rotating cylinder RD outer peripheral face and convey, therefore unwanted spray Mist will not be around to the back side of substrate P, so as to keep the back side cleanly.Set in addition, working as in rotating cylinder RD along periphery During thermoregulative mechanism, the high temperature control of the response of substrate P can be carried out.
With rotating roller RD rotation, the substrate P that the lyophily portion HPR depositions on surface have spraying is conveyed in a linear fashion To the first space AT1 of heat drying unit 20, by the thermoregulative mechanism HP such as electric heater, warm air heater, make by by spray The pattern for the solution formation that mist is deposited and deposited is dried.The substrate P after dry place AT1 is passed through empty by being configured at second Between air turning-bar ATB in AT2 and turn back substantially 180 °, moved in a linear fashion in the 3rd space AT3, reach roller DR11.Separate next door between space AT1, AT2, AT3, the slit-shaped that only passes through substrate P is provided with the next door Opening.Moreover, each space AT2, AT3 are connected with reclaiming oral area De, that reclaims residual contains spray gas.In addition, passing through spraying In the case that the raw material material for depositing and depositing is semi-conducting material, space AT1 is as crystallizing semi-conducting material Or the annealing furnace that is orientated and function.
Air turning-bar ATB has the outer peripheral face of substantially half circumference of cylinder, is provided with its outer peripheral face countless micro- Thin gas squit hole and suction hole.Thus, the surface (face that deposited raw material material) of substrate P not with air turning-bar Contiguously turn back on ATB surface.Also having from the air turning-bar ATB gases sprayed further makes what is deposited on substrate P surface The effect that the pattern of raw material material is dried.
The substrate P turned back by air turning-bar ATB passes through the temperature adjustment gas quilt from the nozzle ANZ ejections in the AT3 of space Control as defined temperature, and reach roller DR11, by the roller DR12 in the space that next door is separated out, clamping driven roller NDR, The airtight bearing Pd to be configured by way of clamping substrate P, next processing unit or thickness, the survey of line width are transported to Quantity sensor portion.
More than, in the case that rotating cylinder RD carrys out conveying substrate P as using Fig. 8, set when by rotating cylinder RD diameter For 50cm or so, when substrate P and the scope that rotating cylinder RD outer peripheral face is close to are set into about 240 °, reative cell TC essence is long Degree about turns into 100cm (50 × π × 240/360), compared with reative cell TC is set into straight line like that as shown in Figure 5, Figure 6, energy Enough reduce the space-consuming (footprint) of device.In addition, the conveying substrate P in the way of the periphery with rotating cylinder RD is close to, because This in course of conveying substrate P also will not up-down vibration, so as to realize stable sprayed deposit.
More than, with reference to the accompanying drawings of preferred embodiment involved in the present invention, but the present invention is not limited certainly In above-mentioned example.The variously-shaped of each structure member shown in the examples described above, combination etc. are one, are not departing from the present invention Purport in the range of various changes can be carried out according to design requirement etc..For example, substrate P is not limited to flexibility Film, sheet material, in addition to glass substrate, Silicon Wafer etc. or plastic base, resin substrate.Also, on substrate P, without by the lengthwise substrate on volume handled by volume to volume mode or to be cut into prescribed level (A4, B5 etc.) substrate carry out monolithic processing mode.
In addition, in the respective embodiments described above, as being formed selectively semiconductor in the desired region in substrate P Layer, the method for electrode layer or wiring layer and used spray deposition, but be not limited to this, also can be instead of using spray The film build methods such as coating, dip coating.Spraying process is in the same manner as spray deposition that the material of the spray form spread from nozzle is molten Liquid is coated to the method in substrate P, and dip coating is that substrate P is impregnated to the side taken out after the set time in the groove of material solution Method.
It is the explanation for example in above-mentioned 3rd embodiment (Fig. 7) in the case of any of both approaches Like that, carry out light pattern in the way of the appropriate position in substrate P forms marked region MK1~MK5 to be formed, pass through spray Coating, dip coating are carried out after the deposition processes of material solution, and mark is confirmed by measurement sensor TMS as shown in Figure 6 The sedimentation state (covering state) on the various test patterns in region MK1~MK5 is remembered, thus, it is possible to spraying process, dip coating Various conditions carry out feedback modifiers.The various conditions of spraying process refer to the fine aperture of distribution nozzle, atomisation pressure, substrate The relative moving speed at the interval of P and nozzle, nozzle and substrate P etc., the various conditions of dip coating refer to the temperature of material solution, Dip time, take-off speed of substrate P etc..
Also, implement development treatment and basis after using to photoresist layer progress light pattern formation (exposure-processed) In the case of the conventional photo-mask process that pattern is etched to resist layer, make the surface of substrate P (in the feelings with basalis Be its surface under condition) turn into the high state of lyophily after, the high photo anti-corrosion agent material of lyophobicity is applied with uniform thickness Spread on the surface of substrate P.Afterwards, by carrying out development treatment, resist layer be removed after part (surface of substrate P or base The surface of bottom) exposed as the high surface of lyophily, therefore pass through spray deposition (or spraying process, dip coating) formation Accurate pattern based on material solution.
Description of reference numerals
FR1 ... supply rolls, FR2 ... reclaims volume, P ... substrates, U1, U2, U3, U4, U5, Un ... processing unit (processing dress Put), the painting application rotating cylinder of Gpa ... photonasty silane couplers, Gp1 ... applying mechanisms, IU ... ultraviolet lighting systems, DM ... roller masks, PL ... projection optical systems, the differential exhaust chamber of DE1, DE2 ..., TC ... reative cells, GS1 ... material substances Atomizer, GS2 ... carrier gas supply units, ULW ... blenders, HPB ... lyophobies portion, HPR ... lyophilys portion, RD ... rotating cylinders, MK1~ MK5 ... marked regions, 20 ... heat drying units, 100 ... display panel areas.

Claims (14)

1. a kind of substrate board treatment, forms electronic device, it is characterised in that possess on the surface of substrate：
Functional layer forming portion, it forms the functional layer based on the close and distant liquid coupling agent of photonasty on the surface of the substrate, and this is photosensitive Property close and distant liquid coupling agent fluorine-based with lyophobicity, and the purple for passing through below illumination wavelength 400nm is included in nitrobenzyl The luminous energy of outside line and depart from the fluorine-based key so as to which lyophily/lyophobicity is modified；
Light pattern forming portion, its exposure machine projected by using projection optical system to the pattern of mask, without mask expose Any of description machine of ray machine and beam sweep type, the institute after being patterned to the functional layer irradiation on the substrate The luminous energy of ultraviolet is stated, the region of the fluorine-based disengaging of the functional layer is formed and leaves the fluorine-based region, thus exist The pattern for imparting the contrast based on lyophily/lyophobicity is formed in the functional layer；And
Sprayed deposit portion, it possesses continuously conveys after the light pattern forming portion is handled along defined conveying direction The substrate conveying mechanism and make the substrate conveyed by the conveying mechanism on the conveying direction with defined The reaction house that length passes through, the sprayed deposit portion will make the gas that functional solution atomization is obtained in the reaction house It is interior to be sprayed in the way of formation of the gas along the substrate is had the surface of the functional layer, wherein, the functional solution Molecule or particle comprising the material substance for the electronic device.
2. substrate board treatment according to claim 1, it is characterised in that
The functional layer forming portion is made up of applying mechanism, and the applying mechanism applies the close and distant liquid silane coupler of the photonasty Whole surface or the part of selection to the substrate.
3. substrate board treatment according to claim 1 or 2, it is characterised in that
Electrode layer, the semiconductor of the exposure machine of the light pattern forming portion or the description machine with constituting thin film transistor (TFT) The shape of layer, dielectric film or wiring layer is accordingly irradiated the energy pattern of the ultraviolet and to the functional layer.
4. substrate board treatment according to claim 1, it is characterised in that
The substrate is the sheet material of flexible long size, and the functional layer forming portion and the light pattern forming portion possess defeated respectively Mechanism is sent, the conveying mechanism is by the sheet material along its length with defined speed continuous conveying.
5. substrate board treatment according to claim 1, it is characterised in that
The substrate is the sheet material of flexible long size,
The conveying mechanism in the sprayed deposit portion include rotating cylinder, the rotating cylinder by the sheet material along its length wound on On outer peripheral face and rotate,
The reaction house in the sprayed deposit portion includes next door, and the next door is with the cylindric week for being located at the rotating cylinder Enclose so that advance on surface of the gas along the sheet material on the outer peripheral face wound on the rotating cylinder after atomization.
6. substrate board treatment according to claim 1, it is characterised in that
In the functional layer of the contrast based on lyophily/lyophobicity is had been assigned by the light pattern forming portion, inciting somebody to action The surface in lyophobicity high region relatively can be set to Epb, the surface in lyophily high region relatively can be set into Epr, will be described The surface of spraying can be set to Eem, the diameter of the spraying is set to φ m, when being sized to Δ Dp of the pattern that will be formed, if Be set to meet determined by following formula relations I, in relations I I any one or both,
Epb<Eem<Epr ... relations Is
0.2·ΔDp<φm<Δ Dp ... relations Is I.
7. a kind of substrate board treatment, forms electronic device, it is characterised in that possess on the surface of substrate：
Functional layer forming portion, it forms the functional layer based on the close and distant liquid coupling agent of photonasty on the surface of the substrate, and this is photosensitive Property close and distant liquid coupling agent fluorine-based with lyophobicity, and the purple for passing through below illumination wavelength 400nm is included in nitrobenzyl The luminous energy of outside line and depart from the fluorine-based key so as to which lyophily/lyophobicity is modified；
Light pattern forming portion, its exposure machine projected by using projection optical system to the pattern of mask, without mask expose Any of description machine of ray machine and beam sweep type, the institute after being patterned to the functional layer irradiation on the substrate The luminous energy of ultraviolet is stated, the region of the fluorine-based disengaging of the functional layer is formed and leaves the fluorine-based region, thus exist The pattern for imparting the contrast based on lyophily/lyophobicity is formed in the functional layer；
Sprayed deposit portion, it possesses continuously conveys after the light pattern forming portion is handled along defined conveying direction The substrate conveying mechanism and make the substrate conveyed by the conveying mechanism on the conveying direction with defined The reaction house that length passes through, the sprayed deposit portion will make the gas that functional solution atomization is obtained in the reaction house It is interior to be sprayed in the way of formation of the gas along the substrate is had the surface of the functional layer, wherein, the functional solution Molecule or particle comprising the material substance for the electronic device；And
Measurement portion, it is measured by being deposited in the region as lyophily of the functional layer by the sprayed deposit portion The thickness or pattern magnitude of the layer of the solution formation of material substance or the material substance.
8. substrate board treatment according to claim 7, it is characterised in that
It is provided for making to be attached to the drying of the spray drying of the substrate between the sprayed deposit portion and the measurement portion Portion, the thickness or size of the pattern that the measurement portion measurement is formed by the material substance.
9. substrate board treatment according to claim 8, it is characterised in that
The sprayed deposit portion possesses adjustment mechanism, and the adjustment mechanism is according to the thickness obtained by the measurement portion measurement, to adjust The concentration for the material substance that the concentration for the spraying that the whole gas sprayed to the substrate is included or spraying are included.
10. substrate board treatment according to claim 9, it is characterised in that
The light pattern forming portion, will be with that can be surveyed with size corresponding with the size of the pattern of the electronic device by described The corresponding light pattern of test pattern of amount portion measurement is irradiated to the institute of the substrate together with the light pattern of the electronic device State a part for functional layer.
11. substrate board treatment according to claim 7, it is characterised in that
In the functional layer of the contrast based on lyophily/lyophobicity is had been assigned by the light pattern forming portion, inciting somebody to action The surface in lyophobicity high region relatively can be set to Epb, the surface in lyophily high region relatively can be set into Epr, will be described The surface of spraying can be set to Eem, the diameter of the spraying is set to φ m, when being sized to Δ Dp of the pattern that will be formed, if Be set to meet determined by following formula relations I, in relations I I any one or both,
Epb<Eem<Epr ... relations Is
0.2·ΔDp<φm<Δ Dp ... relations Is I.
12. a kind of device making method, forms electronic device, it is characterised in that including following process on the surface of substrate：
Functional layer formation process, forms the functional layer based on the close and distant liquid coupling agent of photonasty, this is photosensitive on the surface of the substrate Property close and distant liquid coupling agent fluorine-based with lyophobicity, and the purple for passing through below illumination wavelength 400nm is included in nitrobenzyl The luminous energy of outside line and depart from the fluorine-based key so as to which lyophily/lyophobicity is modified；
Light pattern formation process, the exposure machine projected by using projection optical system to the pattern of mask, without mask expose Any of description machine of ray machine and beam sweep type, described in after the functional layer irradiation patterns on the substrate The luminous energy of ultraviolet, forms the region of the fluorine-based disengaging of the functional layer and leaves the fluorine-based region, thus in institute State the pattern for being formed in functional layer and imparting the contrast based on lyophily/lyophobicity；And
Sprayed deposit process, is continuously conveyed by the light pattern formation process by conveying mechanism along defined conveying direction The substrate after being handled, while the substrate to be led to the reative cell on the conveying direction with defined length Mechanism, while the functional solution for making the molecule comprising the material substance for the electronic device or particle is turned into spraying And the gas being mixed to get with defined carrier gas, so that formation of the gas along the substrate has in the reaction house The mode on the surface of the functional layer is sprayed.
13. device making method according to claim 12, it is characterised in that
The substrate is the sheet material of flexible long size,
In the functional layer formation process and the light pattern formation process, respectively by the sheet material along its length with regulation Speed continuously convey.
14. device making method according to claim 13, it is characterised in that
In the functional layer of the contrast based on lyophily/lyophobicity is had been assigned by the light pattern formation process, The surface in lyophobicity high region relatively can be set to Epb, the surface in lyophily high region relatively can be set to Epr, by institute State the surface of spraying and can be set to Eem, the diameter of the spraying is set to φ m, when being sized to Δ Dp of the pattern that will be formed, Be set as meeting determined by following formula relations I, in relations I I any one or both,
Epb<Eem<Epr ... relations Is
0.2·ΔDp<φm<Δ Dp ... relations Is I.
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